Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/62—Record carriers characterised by the selection of the material
  • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
  • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
  • G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/02—Pretreatment of the material to be coated
  • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
  • C23C14/025—Metallic sublayers
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
  • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
  • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/62—Record carriers characterised by the selection of the material
  • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
  • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
  • G11B5/851—Coating a support with a magnetic layer by sputtering

Definitions

• the present invention relates to a Ni-based alloy sputtering target material characterized by miniaturization of a seed layer thin film.
• the perpendicular magnetic recording method is a method suitable for high recording density, in which the easy axis of magnetization is oriented perpendicularly to the medium surface in the magnetic film of the perpendicular magnetic recording medium. .
• a recording medium having a magnetic recording film phase and a soft magnetic film phase with an increased recording density has been developed.
• a seed is interposed between the soft magnetic layer and the magnetic recording layer.
• a recording medium on which a layer or an underlayer is formed has been developed.
• a NiW-based alloy is used for the seed layer for the perpendicular magnetic recording system as disclosed in, for example, Japanese Patent Application Laid-Open No. 2009-155722 (Patent Document 1).
• Patent Document 2 in a Ni—Fe—Co—M alloy, a target material for sheet layer containing W, Mo, Ta, Cr, V, and Nb as M elements.
• W which is one of bcc metals having a high melting point, is included, thereby improving the orientation to the (111) plane required for the seed layer and making the crystal grains finer. ing.
• Patent Document 1 a NiW-based alloy is used for the seed layer for the perpendicular magnetic recording system, or a bcc-based metal having a high melting point described in Patent Document 2 is used.
• a NiW-based alloy is used for the seed layer for the perpendicular magnetic recording system, or a bcc-based metal having a high melting point described in Patent Document 2 is used.
• the orientation to the (111) plane required for the seed layer is improved and the crystal grains are made finer.
• a refractory metal made of a target material There is a limit to miniaturization with a refractory metal made of a target material.
• the inventors have intensively developed, and as a result, provide an alloy for a seed layer of a Ni-based magnetic recording medium for a sheet layer and a sputtering target material having a crystal grain size smaller than that of Patent Document 2.
• a noble metal Au, Ag, Pd, Rh, Ir, Ru, Re, Pt
• the orientation of the (111) plane of the seed layer is improved.
• the inventors have found that the crystal grain size becomes finer and have completed the invention.
• the gist of the invention is that (1)
• the Ni-based sputtering target material is made of a Ni-Fe-Co-M alloy, and the alloy is at. %, And one or more elements selected from Au, Ag, Pd, Rh, Ir, Ru, Re, and Pt as M1 elements in total 2 to 20 at. %,
• the balance is made of Ni, Fe, Co and unavoidable impurities, and the content ratio of Ni, Fe, Co is at.
• Mn one or more elements selected from Mn in total exceeding 0 to 10 at. % Ni-based sputtering target material characterized by containing.
• a sputtering target material comprising the seed layer alloy for a magnetic recording medium according to any one of (1) and (2).
• Ni—Fe—Co—M alloy target material capable of miniaturizing the crystal grain size of the seed layer in a perpendicular magnetic recording medium, which is an extremely effective technique for improving the recording density of the magnetic storage medium.
• the seed layer is formed by including a noble metal (Au, Ag, Pd, Rh, Ir, Ru, Re, Pt) instead of the bcc metal having a high melting point.
• a noble metal Au, Ag, Pd, Rh, Ir, Ru, Re, Pt
• the (111) plane orientation is improved, and the crystal grain size is further refined.
• M1 element In the Ni—Fe—Co—M alloy, when Au, Ag, Pd, Rh, Ir, Ru, Re, and Pt are hereinafter referred to as “M1 element”, this M1 element is fcc within the component range defined in the present invention.
• the detailed mechanism is not clear by adding to the structure Ni—Fe—Co system, the orientation to the (111) plane required for the seed layer is improved and the crystal grains are made finer. It is an element.
• One or more of these Au, Ag, Pd, Rh, Ir, Ru, Re, and Pt are made 2-20% in terms of at%. However, if the content is less than 2%, the effect is not sufficient, and the alloy for the seed layer is required to be an fcc single phase. However, if the content exceeds 20%, the fcc structure cannot be maintained or tends to be amorphous. Therefore, the range is preferably 2 to 20%. More preferably, the content is 5 to 15%.
• Ni, Fe, and Co 100 to 20: 0 to 50: 0 to 60 in terms of% ratio.
• the reason why it is 20 or more is that if it is less than 20, the coercive force is increased as described above. Therefore, the range was set to 100-20. Preferably it is 100-60.
• Fe is an element that reduces the coercive force and also improves the orientation of the film.
• the range is set to 0-50.
• it is 2 to 50%, more preferably 10 to 40%.
• Co is an element that reduces the coercivity in the (111) direction.
• the upper limit is set to 60.
• the M1 element is fcc within the component range defined in the present invention.
• M2 elements when Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Mn are hereinafter referred to as M2 elements, the M2 elements orient the (111) plane. It is an element and an element that refines crystal grains.
• One or two or more of Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Mn are set to an amount of at% exceeding 0 to 10%. However, if it exceeds 10%, a compound is formed or becomes amorphous, so the upper limit is made 10%. Preferably it is 5%.
• M1 + M2 is preferably 25 at% or less, more preferably 20 at% or less.
• the seed layer in a perpendicular magnetic recording medium can be formed on a glass substrate or the like by sputtering a sputtering target material having the same component as that of the seed layer.
• the thin film formed by sputtering is rapidly cooled.
• a quenched ribbon manufactured by a single roll type quenching apparatus is used as a test material in the present invention. This is a simple evaluation of the influence of the components on various properties of a thin film formed by quenching by sputtering in a simple manner using a liquid quenching ribbon.
• the conditions for preparing the quenched ribbon are as follows: 30 g of raw material weighed so as to have the composition shown in the table is depressurized with a water-cooled copper mold having a diameter of about 10 and a length of about 40 mm, and arc-melted in Ar. This was a melting base material.
• the conditions for preparing the quenching ribbon are as follows. This molten base material is set in a quartz can having a diameter of 15 mm by a single roll method, the tap nozzle diameter is 1 mm, the atmospheric pressure is 61 kPa, the spray differential pressure is 69 kPa, the copper roll (diameter is 300 mm).
• the hot water was discharged at a rotation speed of 3000 rpm and a gap of 0.3 mm between the copper roll and the hot water nozzle.
• the hot water temperature was set immediately after each molten base material was melted.
• the following items were evaluated using the thus prepared quenched ribbon as a test material.
• the crystal grain size of the quenched ribbon As the evaluation of the crystal grain size of the quenched ribbon, it was measured in the roll direction of the cross-sectional microstructure image of the quenched ribbon according to JIS G0551 “Microscopic test method for steel and crystal grain size”. P / Lt of 1.4 or more was I, 1.2 or more, less than 1.4 was II, and less than 1.2 was III.
• a vibration sample type coercive force meter was used, and a quenching ribbon was attached to the sample stage with double-sided tape, and the initial applied magnetic field was 144 kA / m.
• a coercive force of 300 A / m or less was designated as I, 300 A / m or more and 500 A / m or less as II, and 500 A / m or less as III.
• the saturation magnetic flux density of the quenched ribbon As the evaluation of the saturation magnetic flux density of the quenched ribbon, it was measured with an applied magnetic field of 1200 kA / m with a VSM apparatus (vibrating sample magnetometer). The weight of the test material was about 15 mg, and 0.2 T or more was evaluated as I, and less than 0.2 T was evaluated as III.
• the seed layer formed by sputtering has an fcc structure. The seed layer is rapidly cooled to orient (200). Usually, if random orientation is performed, the X-ray diffraction intensity of the (111) plane and the (200) plane will be higher for I (200) than for I (111). Therefore, the orientation of the (111) plane was evaluated by the following method.
• the test material was attached to a glass plate with a double-sided tape, and a diffraction pattern was obtained with an X-ray diffractometer. At this time, the test material was affixed so that a measurement surface might become a copper roll contact surface of a rapidly cooled ribbon.
• the X-ray source was Cu- ⁇ ray and the scan speed was 4 ° / min.
• I (111) / I (200) which is the intensity ratio between the intensity I (111) of the X-ray diffracted by the (111) plane of this diffraction pattern and the intensity I (200) of the (200) plane, is 0.7. Those less than III were taken as III, and those above 0.7 were taken as I. In addition, those in which a compound was produced and those that were made amorphous were designated III.
• No. Nos. 1 to 107 and 167 to 230 are examples of the present invention.
• Reference numerals 108 to 166 and 231 to 236 are comparative examples.
• Comparative Example No. Nos. 108 to 123 and 128 to 134 are inferior in crystal grain size when W is added instead of the M element.
• Comparative Example No. No. 135 has inferior crystal grain size when Cr and V are added instead of M.
• Comparative Example No. 136 when Nb and V are added instead of M, the crystal grain size is inferior.
• Comparative Example No. In 137 when Nb and Mo are added instead of M, the crystal grain size is inferior.
• Comparative Example No. 139 is inferior in orientation and crystal grain size because there is no M element. Comparative Example No. Since 140 has a high Fe content, the coercive force is high.
• Comparative Example No. No. 141 has a low Ag content of 7 and a high Al content, so that the coercive force is slightly high and the orientation is inferior. Comparative Example No. Since 142 has a high Pt content, it is difficult to measure the coercive force, and the saturation magnetic flux density and orientation are inferior.
• Comparative Example No. 143 and 144 have a low Ag content and a high Zr and B content, the orientation is inferior.
• Comparative Example No. 145 has a low Ni content and a high Co content, so the coercive force is high.
• Comparative Example No. 146 has a low Ni content and a high Fe content, so the coercive force is high.
• Comparative Example No. 148 is inferior in all properties because of the high Re content.
• Comparative Example No. No. 149 has a high coercive force due to a low Pt content, and is inferior in orientation and crystal grain size.
• Comparative Example No. No. 150 is inferior in all properties because of high Pt content.
• Comparative Example No. No. 151 has a low coercive force due to a low content of Rh, and is inferior in orientation and crystal grain size.
• Comparative Example No. Since 152 has a high content of Rh, all characteristics are inferior.
• Comparative Example No. Since 153 has a low Ir content, it has a high coercive force and is inferior in orientation and crystal grain size.
• Comparative Example No. 154 is inferior in all properties because of its high Ir content.
• Comparative Example No. Since 155 has a low Au content, the coercive force is high, and the orientation and crystal grain size are inferior.
• Comparative Example No. No. 156 is inferior in all properties due to the high Au content.
• the Ni—Fe—Co—M alloy by restricting to a certain content, by restricting to this region, it has magnetism and increases the magnetic permeability in the (111) direction.
• magnetism by providing magnetism to the Ni-based seed layer, there is an excellent effect that the distance between the magnetic head and the soft magnetic underlayer can be shortened.
• the powder-filled billet was HIP molded under conditions of a molding temperature of 1100 ° C., a molding pressure of 147 MPa, and a molding time of 5 hours.
• This HIP body was processed into a disk shape having a diameter of 180 mm and a thickness of 7 mm by wire cutting, lathe processing, and planar polishing to obtain a sputtering target material.
• Sputtering films were formed on glass substrates using sputtering target materials for these 32 kinds of component compositions.
• the microstructure of the film is the same as that of Example No. of the present invention. 2, No. 10, no. 14, no. 18, no. 25, no. 35, no. 38, no. 55, no. 63, no. 82, no. 91, no. 97, no. 101, no. 107, no. 177, no. 188, No194, No. 206, no. 208, no. 211, no. 217, no. 223, no. No. 229 shows a fine crystal grain size in any of the comparative examples. 114, Comparative Example No. 135, Comparative Example No. 136, Comparative Example No. 153, Comparative Example No. 162 did not have a fine crystal grain size.
• Example No. of the present invention shows good orientation in any case, and Comparative Example No. 153, Comparative Example No. 162 did not show good orientation.
• Example No. of the present invention shows good magnetic properties
• Comparative Examples No. 140 and No. 146, Comparative Example No. 153, Comparative Example No. 231, Comparative Example No. 234 did not show good magnetic properties.
• the X-ray diffraction pattern was measured in the same manner as the quenched ribbon, and was the same as I, II, and III as evaluated by the quenched ribbon. In summary, it was confirmed that the results of the evaluation with the quenched ribbon and the evaluation of the sputtered film formed using the sputtering target material have the same tendency.

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