WO2017154245A1 - 半導体装置の製造方法、記録媒体及び基板処理装置 - Google Patents
半導体装置の製造方法、記録媒体及び基板処理装置 Download PDFInfo
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- WO2017154245A1 WO2017154245A1 PCT/JP2016/078214 JP2016078214W WO2017154245A1 WO 2017154245 A1 WO2017154245 A1 WO 2017154245A1 JP 2016078214 W JP2016078214 W JP 2016078214W WO 2017154245 A1 WO2017154245 A1 WO 2017154245A1
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- gas
- polysilicon film
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- silicon oxide
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Definitions
- the present invention relates to a semiconductor device manufacturing method, a recording medium, and a substrate processing apparatus.
- a process of performing a predetermined process such as an oxidation process or a nitriding process on the substrate may be performed as a process of the manufacturing process.
- Patent Document 1 discloses that in a method of manufacturing a semiconductor manufacturing apparatus, hydrogen or fluorine is included in a crystal grain boundary or a crystal defect portion of polycrystalline silicon or single crystal silicon on an insulator by hydrogen plasma treatment or the like, and Si—H bond or A configuration for forming a Si—F bond is disclosed.
- a polysilicon film is formed on a silicon oxide film, and electrical characteristics are improved by hydrogen plasma treatment.
- this hydrogen plasma treatment is performed, there is a problem in that the silicon oxide film that is the base of the polysilicon film is damaged.
- the present invention provides a technique for enhancing the electrical characteristics of a polysilicon film while suppressing damage to the underlying silicon oxide film.
- a substrate is provided on which a polysilicon film formed on a silicon oxide film and having a contact surface with the silicon oxide film and an exposed surface facing the contact surface is prepared. And a method of supplying a reactive species generated by plasma excitation of a gas containing hydrogen atoms and oxygen atoms to an exposed surface of the polysilicon film.
- the processing apparatus 100 includes a processing furnace 202 that performs plasma processing on the wafer 200.
- the processing furnace 202 includes a processing container 203 that constitutes a processing chamber 201.
- the processing container 203 includes a dome-shaped upper container 210 that is a first container and a bowl-shaped lower container 211 that is a second container.
- the processing chamber 201 is formed by covering the upper container 210 on the lower container 211.
- the upper container 210 is made of a non-metallic material such as aluminum oxide (Al 2 O 3 ) or quartz (SiO 2 ), for example, and the lower container 211 is made of aluminum (Al), for example.
- a gate valve 244 is provided on the lower side wall of the lower container 211.
- the gate valve 244 When the gate valve 244 is open, the wafer 200 can be loaded into the processing chamber 201 via the loading / unloading port 245 using a transfer mechanism (not shown). Alternatively, the wafer 200 can be carried out of the processing chamber 201 through the loading / unloading port 245 using a transfer mechanism (not shown).
- the gate valve 244 When the gate valve 244 is closed, the gate valve 244 serves as a gate valve that maintains airtightness in the processing chamber 201.
- the processing chamber 201 has a plasma generation space 201a around which a coil 212 is provided as will be described later, and a substrate processing space 201b that communicates with the plasma generation space 201a and in which the wafer 200 is processed.
- the plasma generation space 201a is a space where plasma is generated, and refers to a space above the lower end of the coil 212 (one-dot chain line in FIG. 1) in the processing chamber, for example.
- the substrate processing space 201b is a space where the substrate is processed with plasma, and is a space below the lower end of the coil 212.
- a susceptor 217 In the center of the bottom side of the processing chamber 201, a susceptor 217 is disposed as a substrate placement portion on which the wafer 200 is placed.
- the susceptor 217 is made of a non-metallic material such as aluminum nitride (AlN), ceramics, quartz or the like.
- a heater 217b as a heating mechanism is integrally embedded.
- the heater 217 b is configured to be able to heat the surface of the wafer 200 from, for example, about 25 ° C. to about 700 ° C. when electric power is supplied via the heater power adjustment mechanism 276.
- the susceptor 217 is electrically insulated from the lower container 211.
- An impedance adjustment electrode 217c is provided inside the susceptor 217.
- the impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275 as an impedance adjustment unit.
- the variable impedance mechanism 275 includes a coil and a variable capacitor. By controlling the inductance and resistance of the coil and the capacitance value of the variable capacitor, the impedance is changed within a range from about 0 ⁇ to the parasitic impedance value of the processing chamber 201. It is configured to be able to. Accordingly, the potential (bias voltage) of the wafer 200 can be controlled via the impedance adjustment electrode 217c and the susceptor 217.
- the susceptor 217 is provided with a susceptor elevating mechanism 268 that elevates and lowers the susceptor.
- a through hole 217 a is provided in the susceptor 217, while a wafer push-up pin 266 is provided on the bottom surface of the lower container 211.
- the through holes 217a and the wafer push-up pins 266 are provided at least at three locations at positions facing each other.
- the susceptor 217, the heater 217b, and the impedance adjustment electrode 217c constitute the substrate mounting portion according to the present embodiment.
- the susceptor 217 is raised by the susceptor lifting mechanism 268 so that the wafer 200 is positioned below the lower end of a resonance coil 212 described later.
- a gas supply head 236 is provided above the processing chamber 201, that is, above the upper container 210.
- the gas supply head 236 includes a cap-shaped lid 233, a gas introduction port 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, and the reaction gas is introduced into the processing chamber 201. It is configured so that it can be supplied.
- the buffer chamber 237 has a function as a dispersion space for dispersing the reaction gas introduced from the gas introduction port 234.
- the gas inlet 234 has a downstream end of a gas supply pipe 232a for supplying hydrogen (H 2 ) gas as a hydrogen-containing gas and a downstream of a gas supply pipe 232b for supplying oxygen (O 2 ) gas as an oxygen-containing gas.
- the end and a gas supply pipe 232c that supplies nitrogen (N 2 ) gas as an inert gas or a nitrogen-containing gas are connected so as to merge.
- the gas supply pipe 232a is provided with an H 2 gas supply source 250a, a mass flow controller (MFC) 252a as a flow rate control device, and a valve 253a as an on-off valve in order from the upstream side.
- MFC mass flow controller
- the gas supply pipe 232b is provided with an O 2 gas supply source 250b, an MFC 252b as a flow rate control device, and a valve 253b as an on-off valve in order from the upstream side.
- the gas supply pipe 232c is provided with an N 2 gas supply source 250c, an MFC 252c as a flow rate control device, and a valve 253c as an on-off valve in order from the upstream side.
- a valve 243a is provided on the downstream side where the gas supply pipe 232a, the gas supply pipe 232b, and the gas supply pipe 232c merge, and is connected to the upstream end of the gas inlet 234.
- valves 253a, 253b, 253c, and 243a By opening and closing the valves 253a, 253b, 253c, and 243a, the flow rates of the respective gases are adjusted by the MFCs 252a, 252b, and 252c, and the hydrogen-containing gas, the oxygen-containing gas, A processing gas such as a nitrogen-containing gas can be supplied into the processing chamber 201.
- gas supply head 236 (cover 233, gas inlet 234, buffer chamber 237, opening 238, shielding plate 240, gas outlet 239), gas supply pipes 232a, 232b, 232c, MFCs 252a, 252b, 252c, valves
- a gas supply unit according to this embodiment is configured by 253a, 253b, 253c, and 243a.
- the gas supply head 236 (the lid 233, the gas inlet 234, the buffer chamber 237, the opening 238, the shielding plate 240, the gas outlet 239), the gas supply pipe 232a, the MFC 252a, and the valves 253a and 243a are used in this embodiment.
- Such a hydrogen-containing gas supply system is configured.
- the gas supply head 236 (the lid 233, the gas inlet 234, the buffer chamber 237, the opening 238, the shielding plate 240, the gas outlet 239), the gas supply pipe 232b, the MFC 252b, and the valves 253b and 243a are used in the present embodiment.
- Such an oxygen-containing gas supply system is configured.
- the gas supply head 236 (the lid 233, the gas inlet 234, the buffer chamber 237, the opening 238, the shielding plate 240, the gas outlet 239), the gas supply pipe 232c, the MFC 252c, and the valves 253c and 243a are used in this embodiment.
- Such a nitrogen-containing gas supply system is configured.
- a gas exhaust port 235 for exhausting the reaction gas from the processing chamber 201 is provided on the side wall of the lower container 211.
- the upstream end of the gas exhaust pipe 231 is connected to the gas exhaust port 235.
- the gas exhaust pipe 231 is provided with an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure regulator), a valve 243b as an on-off valve, and a vacuum pump 246 as a vacuum exhaust device in order from the upstream side. .
- APC Auto Pressure Controller
- the gas exhaust port 235, the gas exhaust pipe 231, the APC valve 242, and the valve 243b constitute the exhaust unit according to the present embodiment.
- a spiral resonance coil 212 as a first electrode is provided on the outer periphery of the processing chamber 201, that is, outside the side wall of the upper container 210, so as to surround the processing chamber 201.
- An RF sensor 272, a high frequency power supply 273 and a frequency matching unit 274 are connected to the resonance coil 212.
- the high frequency power supply 273 supplies high frequency power to the resonance coil 212.
- the RF sensor 272 is provided on the output side of the high frequency power supply 273.
- the RF sensor 272 monitors information on high-frequency traveling waves and reflected waves that are supplied.
- the frequency matching unit (frequency control unit) 274 controls the high frequency power supply 273 so as to minimize the reflected wave based on the information of the reflected wave monitored by the RF sensor 272, and performs frequency matching.
- Both ends of the resonance coil 212 are electrically grounded, but at least one end of the resonance coil 212 is used for fine adjustment of the electrical length of the resonance coil when the apparatus is first installed or when processing conditions are changed. And grounded via the movable tap 213.
- Reference numeral 214 in FIG. 1 indicates the other fixed ground.
- a power feeding unit is configured by a movable tap 215 between the grounded ends of the resonance coil 212. ing.
- the shielding plate 223 is provided to shield leakage of electromagnetic waves to the outside of the resonance coil 212 and to form a capacitance component necessary for constituting a resonance circuit between the resonance coil 212 and the resonance coil 212.
- the resonance coil 212, the RF sensor 272, and the frequency matching unit 274 constitute the plasma generation unit according to the present embodiment.
- the resonance coil 212 forms a standing wave of a predetermined wavelength
- the winding diameter, the winding pitch, and the number of turns are set so as to resonate in all wavelength modes. That is, the electrical length of the resonance coil 212 is set to an integral multiple (1 time, 2 times,...) Of one wavelength at a predetermined frequency of the power supplied from the high frequency power supply 273.
- the length of one wavelength is about 22 meters
- the length of one wavelength is about 11 meters
- the length of one wavelength is about 5.5 meters. .
- the resonance coil 212 has a frequency of, for example, 800 kHz to 50 MHz, and a power of 0.5 KW to 5 KW, more preferably 1 An effective cross-sectional area of 50 mm 2 to 300 mm 2 and a coil diameter of 200 mm to 500 mm so that a magnetic field of about 0.01 gauss to 10 gauss can be generated by high-frequency power of 0.0 KW to 4.0 KW. Then, it is wound about 2 to 60 times on the outer peripheral side of the room forming the plasma generation space 201a.
- one end or both ends of the resonance coil 212 are usually grounded via a movable tap in order to finely adjust the electrical length of the resonance coil during installation and make the resonance characteristics substantially equal to the high frequency power supply 273.
- a waveform adjustment circuit including a coil and a shield is inserted at one end (or the other end or both ends) of the resonance coil 212 so that the phase and antiphase currents flow symmetrically with respect to the electrical midpoint of the resonance coil 212.
- the waveform adjustment circuit is configured as an open circuit by setting the end of the resonance coil 212 to an electrically disconnected state or an electrically equivalent state.
- the end of the resonance coil 212 may be ungrounded by a choke series resistor and may be DC-connected to a fixed reference potential.
- the high frequency power source 273 includes a power source control means (control circuit) including a high frequency oscillation circuit and a preamplifier for defining the oscillation frequency and output, and an amplifier (output circuit) for amplifying to a predetermined output.
- the power control means controls the amplifier based on output conditions relating to the frequency and power set in advance through the operation panel, and the amplifier supplies constant high frequency power to the resonance coil 212 via the transmission line.
- the frequency matching unit 274 detects the reflected wave power from the resonance coil 212 when plasma is generated, and the preset frequency is set so that the reflected wave power is minimized. Increase or decrease the oscillation frequency.
- the frequency matching unit 274 includes a frequency control circuit that corrects a preset oscillation frequency, and detects the reflected wave power in the transmission line on the output side of the amplifier of the high frequency power supply 273, An RF sensor 272 (reflected wave power meter) that feeds back a voltage signal to the frequency control circuit is interposed.
- the frequency control circuit oscillates at the no-load resonance frequency of the resonance coil 212 before plasma lighting, and oscillates at a frequency obtained by increasing or decreasing the preset frequency so that the reflected power is minimized after plasma lighting. As a result, a frequency signal is given to the high frequency power supply 273 so that the reflected wave in the transmission line becomes zero.
- the frequency matching unit 274 attached to the high-frequency power source 273 compensates for a resonance point shift in the resonant coil 212 due to fluctuations in the generated plasma capacitive coupling and inductive coupling on the high-frequency power source 273 side.
- the resonance coil 212 outputs a high frequency with a frequency that accurately resonates according to the deviation of the resonance point of the resonance coil 212 when the plasma is generated and when the plasma generation conditions fluctuate.
- a standing wave can be formed. That is, as shown in FIG. 2, in the resonance coil 212, a standing wave in a state where the phase voltage and the antiphase voltage are always canceled is formed by power transmission at the actual resonance frequency of the resonator including plasma, The highest phase current occurs at the electrical midpoint of the coil (node with zero voltage). Therefore, the induction plasma excited at the electrical midpoint has almost no capacitive coupling with the processing chamber wall or the substrate mounting table, and a donut-shaped plasma having an extremely low electrical potential is generated in the plasma generation space 201a. Can be generated.
- the plasma gas (main gas) is supplied to the plasma generation space 201a while maintaining the degree of vacuum.
- a mixed gas of H 2 gas and O 2 gas is supplied.
- the controller 221 as a control unit is configured as a computer including a CPU (Central Processing Unit) 221a, a RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d.
- the RAM 221b, the storage device 221c, and the I / O port 221d are configured to exchange data with the CPU 221a via the internal bus 221e.
- a touch panel, a mouse, a keyboard, an operation terminal, or the like may be connected to the controller 221 as the input / output device 225.
- a display or the like may be connected to the controller 221 as a display unit.
- the storage device 221c includes, for example, a flash memory, an HDD (Hard Disk Drive), a CD-ROM, and the like.
- a control program that controls the operation of the substrate processing apparatus 100, a process recipe that describes the procedure and conditions of the substrate processing, and the like are stored in a readable manner.
- the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 221 to execute each procedure in a substrate processing step to be described later, and functions as a program.
- the RAM 221b is configured as a memory area (work area) in which a program or data read by the CPU 221a is temporarily stored.
- the I / O port 221d includes the above-described MFCs 252a to 252c, valves 253a to 253c, 243a and 243b, gate valve 244, APC valve 242, vacuum pump 246, heater 217b, RF sensor 272, high frequency power supply 273, frequency matching unit 274, The susceptor elevating mechanism 268 and the impedance variable mechanism 275 are connected.
- the CPU 221a is configured to read and execute a control program from the storage device 221c, and to read a process recipe from the storage device 221c in response to an operation command input from the input / output device 225 or the like. As shown in FIG. 1, the CPU 221a adjusts the opening degree of the APC valve 242, the opening / closing operation of the valve 243b, and the vacuum through the I / O port 221d and the signal line A in accordance with the contents of the read process recipe.
- the pump 246 is started and stopped, the lifting / lowering operation of the susceptor lifting / lowering mechanism 268 through the signal line B, the power supply amount adjusting operation (temperature adjusting operation) to the heater 217b based on the temperature sensor by the heater power adjusting mechanism 276 through the signal line C, The impedance value adjusting operation by the impedance variable mechanism 275, the opening / closing operation of the gate valve 244 through the signal line D, the operation of the RF sensor 272, the frequency matching unit 274 and the high frequency power supply 273 through the signal line E, and the MFCs 252a to 252c through the signal line F. Adjusting the flow rate of various gases by the valve and valve 2 It is configured to control the opening / closing operations of 53a to 253c and 243a, respectively.
- FIG. 4 and FIG. 5A and 5B are diagrams showing an example of a substrate processed in the substrate processing step according to the embodiment of the present invention, where FIG. 5A is an overall view and FIG. 5B is a partially enlarged view.
- the substrate processing process according to this embodiment is performed by the above-described processing apparatus 100 as one process of manufacturing a semiconductor device such as a flash memory. In the following description, the operation of each part constituting the processing apparatus 100 is controlled by the controller 221.
- a pattern having a 3D structure (three-dimensional structure) as shown in FIG. 5A is formed on the wafer 200 processed in the substrate processing step according to the present embodiment.
- the structure is, for example, a cylindrical 3D-NAND structure, and is formed by the following procedure.
- a silicon oxide film 300a and a polysilicon film 302a are continuously stacked on a substrate or the like. Etching is performed in the form of holes from the top to the bottom of the laminated film.
- the silicon oxide film 300b, the silicon nitride film 306, and the silicon oxide film 300c are formed on the inner wall side surface of the cylindrical structure in the hole 304 in order from the wall surface side (that is, in order from the outer side to the center side of the cylindrical structure).
- the polysilicon films 302b are sequentially stacked. This polysilicon film 302b is used as a channel portion.
- the polysilicon film 302b in this embodiment may be a mixed crystal silicon film with amorphous silicon.
- the silicon oxide film 300b in the present embodiment may be a film containing nitrogen (N) or carbon (C) (that is, SiON, SiOC, etc.).
- the polysilicon film 302b exposed inside the cylindrical structure is subjected to a plasma process (modification process) using a plasma of a gas containing hydrogen atoms, so that the polysilicon film 302b is processed.
- a plasma process modification process
- a silicon oxide film 300c which is a base film adjacent to the polysilicon film 302b, is formed.
- the function as an insulating film is deteriorated due to damage.
- a procedure of forming a silicon oxide film on the polysilicon film after plasma processing of the polysilicon film can be taken. (In other words, the order of film formation is changed.)
- a silicon oxide film as a base is formed, for example, as in the cylindrical 3D-NAND structure as described above, a polysilicon film is formed thereon. May be necessary. In this embodiment, even if a polysilicon film is formed on a silicon oxide film that is a base film, plasma processing is performed while suppressing damage to the silicon oxide film.
- the thickness of at least a part of the polysilicon film 302b is 7 nm or less.
- the polysilicon film 302b is a very thin film having a thickness of 7 nm or less, damage to the silicon oxide film 300c on the contact surface side of the polysilicon film 302b becomes particularly significant, and thus the application of the present invention is more preferable. is there. This will be described in detail below.
- the wafer 200 on which the cylindrical structure is formed is carried into the processing chamber 201.
- the susceptor elevating mechanism 268 lowers the susceptor 217 to the transfer position of the wafer 200 and causes the wafer push-up pins 266 to pass through the through holes 217a of the susceptor 217.
- the wafer push-up pins 266 protrude from the surface of the susceptor 217 by a predetermined height.
- the gate valve 244 is opened, and the wafer 200 is loaded into the processing chamber 201 from a vacuum transfer chamber (not shown) adjacent to the processing chamber 201 using a transfer mechanism not shown in the drawing.
- the wafer 200 is supported in a horizontal posture on the wafer push-up pins 266 protruding from the surface of the susceptor 217.
- the transfer mechanism is retracted out of the processing chamber 201, the gate valve 244 is closed, and the processing chamber 201 is sealed.
- the susceptor elevating mechanism 268 raises the susceptor 217 so as to be at a predetermined position between the lower end 203a of the resonance coil 212 and the upper end 245a of the loading / unloading port 245. As a result, the wafer 200 is supported on the upper surface of the susceptor 217.
- the substrate carry-in step S110 may be performed while purging the inside of the processing chamber 201 with N 2 gas or the like as an inert gas.
- the temperature of the wafer 200 carried into the processing chamber 201 is increased.
- the heater 217b is preheated, and the wafer 200 that has been loaded is held on the susceptor 217 in which the heater 217b is embedded, so that the wafer 200 is heated to a predetermined temperature within a range of, for example, 100 ° C. to 500 ° C. To do.
- the temperature of the wafer 200 is heated to 300 ° C.
- the inside of the processing chamber 201 is evacuated by the vacuum pump 246 through the gas exhaust pipe 231, and the pressure in the processing chamber 201 is set to a predetermined value in the range of 30 Pa to 400 Pa. . For example, it is adjusted to 200 Pa.
- the vacuum pump 246 is operated until at least a substrate unloading step S160 described later is completed.
- a gas containing hydrogen atoms and oxygen atoms is supplied as a processing gas into the processing chamber 201, and plasma processing is performed on the polysilicon film 302b by exciting the gas with plasma.
- a mixed gas of H 2 gas that is hydrogen-containing gas and O 2 gas that is oxygen-containing gas is supplied. Specifically, it is as follows.
- the valves 243a, 253a, and 253b are opened, and a mixed gas of H 2 gas and O 2 gas is introduced (supplied) into the processing chamber 201 through the buffer chamber 237. Specifically, the supply of H 2 gas into the processing chamber 201 via the buffer chamber 237 is started while the valve 253a is opened and the flow rate is controlled by the MFC 252a. At the same time, the valve 253b is opened, and supply of O 2 gas into the processing chamber 201 is started via the buffer chamber 237 while controlling the flow rate with the MFC 252b.
- the amount of H 2 gas introduced is, for example, in the range of 50 sccm to 2000 sccm
- the amount of O 2 gas introduced is, for example, in the range of 50 sccm to 2000 sccm. Control is performed so that the volume ratio of H 2 gas and O 2 gas in the mixed gas is 5:95 to 95: 5, and the respective opening degrees of the MFCs 252a and 252b are adjusted.
- the introduction amount of H 2 gas is 400 sccm
- the introduction amount of O 2 gas is 600 sccm.
- volume ratio of H 2 gas in the mixed gas is smaller than 5:95, there is a possibility that the effect of improving the electrical characteristics of the polysilicon film as described later cannot be sufficiently obtained. Further, when the volume ratio of H 2 gas in the mixed gas is larger than 95: 5, there is a possibility that the effect of reducing damage to the underlying silicon oxide film as described later may not be obtained.
- the opening degree of the APC valve 242 is adjusted so that the pressure in the processing chamber 201 becomes a predetermined pressure of, for example, 10 Pa to 400 Pa, more preferably 50 Pa to 300 Pa (150 Pa in the present embodiment). Then, the processing chamber 201 is exhausted. In this way, while the inside of the processing chamber 201 is appropriately evacuated, the supply of the mixed gas of H 2 gas and O 2 gas is continued until the plasma processing step described later is completed.
- H 2 gas may be introduced into the processing chamber 201 so that the inside of the processing chamber 201 has a predetermined pressure. By so doing, rapid oxidation of the control electrode 602 can be suppressed while maintaining the pressure in the processing chamber 201 when the mixed gas supply is started.
- H 2 gas and O 2 gas are activated and dissociated by the excited plasma, and include active species including hydrogen atoms (H) and oxygen atoms (O), active species including hydrogen atoms, hydrogen ions, and oxygen atoms.
- active species including hydrogen atoms (H) and oxygen atoms (O)
- active species including hydrogen atoms, hydrogen ions, and oxygen atoms.
- Reactive species such as active species and oxygen ions (for example, OH and H) are generated.
- the group of one or more generated reactive species contains hydrogen atoms and oxygen atoms.
- the induction plasma excited at the electrical midpoint has almost no capacitive coupling with the processing chamber wall or the substrate mounting table, and a donut-shaped plasma having an extremely low electrical potential is generated in the plasma generation space 201a. Can be formed.
- the power supply control means attached to the high-frequency power supply 273 compensates for the shift of the resonance point in the resonance coil 212 due to fluctuations in plasma capacitive coupling and inductive coupling, and forms a standing wave more accurately.
- the plasma generation space can be formed more reliably in the plasma generation space with almost no capacitive coupling and extremely low electrical potential.
- a gas containing one or a plurality of reactive species generated by activating a mixed gas containing H 2 gas and O 2 gas by plasma is supplied to the surface (exposed surface) of the polysilicon film 302b, and the polysilicon film 302b is modified. That is, hydrogen atoms contained in the group of one or more reactive species react with the polysilicon film 302b, and hydrogen atoms are added into the film.
- the supplied reactive species may also react with the silicon oxide film 300c, which is the base of the polysilicon film 302b.
- the supplied reactive species include oxygen atoms. The damage to the silicon oxide film 300c in the modification process can be suppressed.
- the configuration using a mixed gas of H 2 gas, which is a hydrogen-containing gas, and O 2 gas, which is an oxygen-containing gas has been described as the gas containing hydrogen atoms and oxygen atoms.
- a mixed gas of a hydrogen-containing gas other than H 2 gas and an oxygen-containing gas other than O 2 gas may be used.
- O 3 (ozone) gas may be used as the oxygen-containing gas.
- plasma excitation may be performed by supplying a molecular gas containing both hydrogen atoms and oxygen atoms.
- H 2 O gas or H 2 O 2 gas may be used.
- a gas containing deuterium D may be used as the hydrogen-containing gas.
- the ratio of hydrogen atoms to oxygen atoms in the gas containing hydrogen atoms and oxygen atoms is set to 5:95 to 95: 5.
- the ratio of hydrogen atoms in the gas containing hydrogen atoms and oxygen atoms is smaller than 5:95, there is a possibility that the effect of improving the electrical characteristics of the polysilicon film as described later cannot be sufficiently obtained.
- the ratio of hydrogen atoms in the gas containing hydrogen atoms and oxygen atoms is larger than 95: 5, there is a possibility that effects such as reducing damage to the underlying silicon oxide film as described later may not be obtained. There is.
- reactive species such as active species are generated by supplying a gas containing hydrogen atoms and oxygen atoms into the processing chamber 201 and performing plasma excitation, but as another example, It is also possible to introduce a reactive species such as an activated species into the processing chamber 201 by plasma excitation of the gas outside. As yet another example, a hydrogen-containing gas and an oxygen-containing gas can be separately plasma-excited, and reactive species such as active species generated by each can be mixed and supplied to the polysilicon film 302b.
- the output of power from the high frequency power supply 273 is stopped, and the plasma discharge in the processing chamber 201 is stopped. In this embodiment, it is 120 seconds. Further, the valves 253a and 253b are closed, and the supply of H 2 gas and O 2 gas into the processing chamber 201 is stopped.
- N 2 gas is used as the nitrogen-containing gas. Specifically, it is as follows.
- N 2 gas flow rate control process The valves 243a and 253c are opened, and N 2 gas is introduced (supplied) into the processing chamber 201 through the buffer chamber 237. Specifically, the supply of N 2 gas into the processing chamber 201 via the buffer chamber 237 is started while the valve 253c is opened and the flow rate is controlled by the MFC 252c. At this time, the amount of N 2 gas introduced is, for example, in the range of 50 sccm to 3000 sccm. In this embodiment, the amount of N 2 gas introduced is 0.2 slm.
- the opening degree of the APC valve 242 is set so that the pressure in the processing chamber 201 becomes a predetermined pressure of, for example, 0.1 Pa to 50 Pa, more preferably 1 Pa to 10 Pa (5 Pa in this embodiment).
- the inside of the processing chamber 201 is exhausted by adjusting. In this way, while the processing chamber 201 is appropriately evacuated, the supply of N 2 gas is continued until the plasma processing step described later is completed.
- the induction plasma is excited, the N 2 gas is activated by the excited plasma, and a nitrogen active species (reactive species) containing nitrogen (N) atoms is generated.
- the nitrogen active species reacts with the surface of the modified polysilicon film 302b, and a nitride film (SiN) of about 2 nm is formed on the surface. That is, when the N 2 gas is activated by the plasma, a dense SiN film is formed on the exposed surface of the polysilicon film 302b, and this SiN film serves as a barrier to prevent hydrogen desorption from the surface of the polysilicon film 302b. Suppress.
- Substrate unloading step S160 When the inside of the processing chamber 201 reaches a predetermined pressure, the susceptor 217 is lowered to the transfer position of the wafer 200 and the wafer 200 is supported on the wafer push-up pins 266. Then, the gate valve 244 is opened, and the wafer 200 is carried out of the processing chamber 201 using a transfer mechanism not shown in the drawing. At this time, the wafer 200 may be unloaded while purging the inside of the processing chamber 201 with N 2 gas which is an inert gas. Thus, the substrate processing process according to this embodiment is completed.
- N 2 gas which is an inert gas
- the degree of freedom in the device formation process can be improved. Further, by performing nitriding treatment on the surface of the polysilicon film 302b after the hydrogen plasma treatment using the plasma of the nitrogen-containing gas, hydrogen added to the polysilicon film 302b by the hydrogen plasma reforming is further processed by the subsequent heat treatment. It is possible to suppress missing in a process or the like.
- FIGS. 6 and 7 show SIMS (component concentrations in the polysilicon film and the silicon oxide film of the wafer processed in the substrate processing process according to the present embodiment and the wafer processed in the substrate processing process according to the comparative example. It is the figure analyzed and compared by Secondary Ion Mass Spectrometry).
- FIG. 6 is a diagram showing a comparison of the hydrogen concentration
- FIG. 7 is a diagram showing a comparison of the oxygen concentration.
- the vertical axis in FIG. 6 indicates the hydrogen concentration
- the vertical axis in FIG. 7 indicates the oxygen concentration.
- FIG. 6 and 7 indicate the depth from the surface of the polysilicon film, respectively, and the region denoted as “Poly-Si” is the region (depth) where the polysilicon film is formed.
- a region labeled “SiO” indicates a region (depth) where a silicon oxide film is formed.
- the polysilicon film is compared with the case where the plasma processing of Comparative Example 1 is not performed. It can be seen that the hydrogen concentration inside is high. That is, hydrogen atoms are added to the polysilicon film by performing a plasma treatment using a gas containing hydrogen atoms. Accordingly, the added hydrogen atoms can reduce the defect density in the polysilicon film and increase the polysilicon particle size, thereby improving the electron mobility in the film and improving the electrical characteristics of the device. be able to.
- the hydrogen concentration in the silicon oxide film is lower than that in Comparative Example 1 and Comparative Example 2 when the plasma treatment of this example is performed. That is, by performing plasma processing using a mixed gas of H 2 gas and O 2 gas, hydrogen atoms are added to the polysilicon film, while hydrogen atoms are added to the silicon oxide film as the underlying film. It can be seen that it can be suppressed. This is to prevent oxygen atoms contained in the reactive species generated from the mixed gas in this embodiment from preferentially reacting with the silicon oxide film and adding hydrogen atoms to the silicon oxide film. Guessed.
- the oxygen concentration in the polysilicon film is the comparative example 1.
- the oxygen concentration in the silicon oxide film is greatly increased as compared with the present embodiment, and the oxygen concentration in the silicon oxide film is significantly decreased as compared with Comparative Example 1 and the present embodiment. From this result, it is presumed that oxygen atoms contained in the silicon oxide film have permeated (diffused) into the polysilicon film by performing the plasma treatment of Comparative Example 2. That is, in the plasma treatment using only H 2 gas as in Comparative Example 2, oxygen atoms constituting the silicon oxide film are largely lost from the film (that is, the silicon oxide film is damaged). The insulating characteristics as the base insulating film are greatly deteriorated.
- oxygen atoms constituting the silicon oxide film are largely lost from the film (that is, the silicon oxide film is damaged), and the oxygen atoms are prevented from diffusing into the polysilicon film. Therefore, even when the polysilicon film is subjected to plasma processing using a gas containing hydrogen atoms, the insulating characteristics of the silicon oxide film as the base insulating film can be maintained.
- FIG. 8 shows the ESR (Electric Spin® Resonance) analysis of the defect density in the film of the wafer processed in the substrate processing step according to the present embodiment and the wafer processed using the substrate processing step according to the comparative example. It is the figure shown in comparison. ESR can evaluate defect density in a film by measuring magnetic resonance of electron spin.
- the vertical axis in FIG. 8 indicates the magnitude of absorption, and the horizontal axis indicates the strength of the magnetic field.
- the solid line is the result of analyzing the polysilicon film formed on the wafer after the substrate processing step according to the present embodiment, and is shown as an example.
- a broken line is a result of analyzing the polysilicon film formed on the wafer before the substrate processing process according to the present embodiment, and is shown as a comparative example.
- the polysilicon film after the substrate processing process according to the present example is caused by a detected defect. It can be seen that the signal to be transmitted is small and the defect density in the film is reduced. That is, the polysilicon film is modified by the plasma treatment of this embodiment. This is considered to be improved by filling the defects of the polysilicon film with the added hydrogen.
- FIG. 9 shows an electrical property evaluation sample used in this experiment.
- the structure of this sample is close to the 3D-NAND structure, and after forming a gate insulating film, a polysilicon film as a channel portion is formed, and H 2 according to the substrate processing step of this embodiment is formed on this polysilicon film.
- Plasma treatment with a mixed gas of gas and O 2 gas is performed.
- 10 and 11 are diagrams showing the electrical property evaluation results obtained using the sample of FIG. 9, and the solid line is the electrical property after the substrate processing step according to the present embodiment. Show. A broken line is an electrical characteristic before the substrate processing step according to the present embodiment, and is shown as a comparative example.
- FIG. 9 shows an electrical property evaluation sample used in this experiment.
- the structure of this sample is close to the 3D-NAND structure, and after forming a gate insulating film, a polysilicon film as a channel portion is formed, and H 2 according to the substrate processing step of this embodiment is formed on this polysilicon film.
- FIG. 10 is a diagram showing the Id-Vg characteristics of the sample of FIG. 9, wherein the vertical axis Id shows the current flowing from the drain to the source (drain current), and the horizontal axis Vg shows the gate-source voltage (gate voltage). ).
- the vertical axis Gm shows the ratio of the drain current to the change in the gate voltage
- the horizontal axis Vg shows the gate-source voltage (gate voltage).
- the slope of Id ⁇ Vg is steep after the substrate processing step according to the present example when compared with the electrical characteristic evaluation result of the comparative example. This indicates that the amount of change in the drain current increases with the change in the gate voltage, and a transistor that operates faster is expected.
- the current value (Id value) is higher after the substrate processing step according to the present embodiment as compared with the electrical property evaluation result of the comparative example. I understand.
- the maximum value of the Gm value is large after the substrate processing process according to this example, and the current that can be operated at the maximum is obtained. It can be seen that the value is large.
- the electrical characteristics of the polysilicon film can be improved by performing the plasma treatment containing hydrogen atoms on the polysilicon film. That is, by adding hydrogen to the film, the defect density of the film is reduced and the particle size of the polysilicon can be increased, so that the electron mobility in the polysilicon film is improved and the device characteristics are improved. Can be improved.
- damage to the underlying silicon oxide film is performed by performing plasma processing using a gas containing hydrogen atoms and oxygen atoms on the polysilicon film. Decrease) and permeation (diffusion) of oxygen components into the polysilicon film. Further, excessive addition of hydrogen to the underlying silicon oxide film can be suppressed. Therefore, even if the plasma treatment is performed after forming the silicon oxide film and the polysilicon film in this order, hydrogen can be added to the polysilicon film while suppressing unnecessary modification of the silicon oxide film and the polysilicon film. Therefore, the degree of freedom for device formation can be improved.
- the surface of the polysilicon film is further nitrided by performing the plasma treatment using a nitrogen-containing gas. This suppresses hydrogen loss after hydrogen plasma reforming.
- the present invention is applied to the NAND structure, and the polysilicon film can be finally modified after forming each film, so that the degree of freedom of device formation is improved. Further, it is desirable that the polysilicon film as the channel has a small film thickness, and in this case, the damage to the silicon oxide film on the base surface becomes significant, so that the application of the present invention is more preferable.
- FIG. 12 is a view showing another structural example of the substrate to which the substrate processing process according to the embodiment of the present invention is applied.
- a silicon oxide film 300, a silicon nitride film 306, a silicon oxide film 300, and a polysilicon film 302 are sequentially stacked on the wafer 200 from the contact surface side with the wafer 200, and a plurality of trenches 400 are formed. Is formed.
- the substrate processing process according to this embodiment can be applied to a structure in which a floating electrode formed of the polysilicon film 302 is formed on the trench 400 as shown in FIG.
- the silicon oxide film 300 can be formed on the base of the floating electrode. Damage to the silicon oxide film 300 underlying the film 302 can be suppressed, and the electrical characteristics of the polysilicon film 302 can be improved. That is, even in the high aspect structure, the polysilicon film as the channel portion can be uniformly (isotropically) plasma-processed, which is preferable for improving the characteristics of the device having the high aspect structure.
- a control gate, a first insulating film, a trap layer (floating gate), a silicon oxide film as a second insulating film, and a polysilicon film as a channel portion are stacked on the wafer 200.
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Abstract
Description
本発明の一実施形態に係る基板処理装置について、図1から図5を用いて以下に説明する。
処理装置100は、ウエハ200をプラズマ処理する処理炉202を備えている。処理炉202は、処理室201を構成する処理容器203を備えている。処理容器203は、第1の容器であるドーム型の上側容器210と、第2の容器である碗型の下側容器211とを備えている。上側容器210が下側容器211の上に被さることにより、処理室201が形成される。上側容器210は、例えば酸化アルミニウム(Al2O3)または石英(SiO2)等の非金属材料で形成されており、下側容器211は、例えばアルミニウム(Al)で形成されている。
処理室201の底側中央には、ウエハ200を載置する基板載置部としてのサセプタ217が配置されている。サセプタ217は例えば窒化アルミニウム(AlN)、セラミックス、石英等の非金属材料から形成されている。
処理室201の上方、つまり上側容器210の上部には、ガス供給ヘッド236が設けられている。ガス供給ヘッド236は、キャップ状の蓋体233と、ガス導入口234と、バッファ室237と、開口238と、遮蔽プレート240と、ガス吹出口239とを備え、反応ガスを処理室201内へ供給できるように構成されている。バッファ室237は、ガス導入口234より導入される反応ガスを分散する分散空間としての機能を持つ。
下側容器211の側壁には、処理室201内から反応ガスを排気するガス排気口235が設けられている。ガス排気口235には、ガス排気管231の上流端が接続されている。ガス排気管231には、上流側から順に圧力調整器(圧力調整部)としてのAPC(Auto Pressure Controller)バルブ242、開閉弁としてのバルブ243b、真空排気装置としての真空ポンプ246が設けられている。
処理室201の外周部、すなわち上側容器210の側壁の外側には、処理室201を囲うように、第1の電極としての、螺旋状の共振コイル212が設けられている。共振コイル212には、RFセンサ272、高周波電源273と周波数整合器274が接続される。
図3に示すように、制御部としてのコントローラ221は、CPU(Central Processing Unit)221a、RAM(Random Access Memory)221b、記憶装置221c、I/Oポート221dを備えたコンピュータとして構成されている。RAM221b、記憶装置221c、I/Oポート221dは、内部バス221eを介して、CPU221aとデータ交換可能なように構成されている。コントローラ221には、入出力装置225として、例えばタッチパネル、マウス、キーボード、操作端末等が接続されていてもよい。また、コントローラ221には、表示部として、例えばディスプレイ等が接続されていてもよい。
次に、本実施形態に係る基板処理工程について、主に図4及び図5を用いて説明する。図5は、本発明の実施形態に係る基板処理工程で処理される基板の一例を示す図であって(a)は全体図を示し、(b)は一部拡大図を示す。本実施形態に係る基板処理工程は、例えばフラッシュメモリ等の半導体デバイスの製造工程の一工程として、上述の処理装置100により実施される。なお以下の説明において、処理装置100を構成する各部の動作は、コントローラ221により制御される。
最初に、基板等の上にシリコン酸化膜300aとポリシリコン膜302aが連続的に積層される。その積層膜の上から下までホール(孔)状にエッチングする。そしてホール304の中の筒状構造の内壁側面に、壁面側から順番に(すなわち筒状構造の外側から中心側に向かって順番に)、シリコン酸化膜300b、シリコン窒化膜306、シリコン酸化膜300c、ポリシリコン膜302bが順番に積層されて形成されている。このポリシリコン膜302bがチャネル部として用いられる。なお、本実施形態におけるポリシリコン膜302bは、アモルファスシリコンとの混晶シリコン膜であってもよい。また、本実施形態におけるシリコン酸化膜300bは、窒素(N)や炭素(C)を含有する膜(すなわちSiONやSiOC、等)であってもよい。
以下に詳述する。
まず、上記の筒状構造が面上に形成されたウエハ200を処理室201内に搬入する。具体的には、サセプタ昇降機構268がウエハ200の搬送位置までサセプタ217を下降させて、サセプタ217の貫通孔217aにウエハ突上げピン266を貫通させる。その結果、ウエハ突き上げピン266が、サセプタ217表面よりも所定の高さ分だけ突出した状態となる。
続いて、処理室201内に搬入されたウエハ200の昇温を行う。ヒータ217bは予め加熱されており、ヒータ217bが埋め込まれたサセプタ217上に、搬入されたウエハ200を保持することで、例えば100℃以上500℃以下の範囲内の所定の温度にウエハ200を加熱する。ここでは、ウエハ200の温度が300℃となるよう加熱する。また、ウエハ200の昇温を行う間、真空ポンプ246によりガス排気管231を介して処理室201内を真空排気し、処理室201内の圧力を30Pa以上400Pa以下の範囲内の所定値とする。例えば200Paに調整される。真空ポンプ246は、少なくとも後述の基板搬出工程S160が終了するまで作動させておく。
次に、処理ガスとして水素原子と酸素原子を含有するガスを処理室201内に供給し、当該ガスをプラズマ励起することによりポリシリコン膜302bに対するプラズマ処理を実施する。本実施形態では、水素含有ガスであるH2ガスと酸素含有ガスであるO2ガスの混合ガスを供給する。具体的には次の通りである。
バルブ243a,253a,253bを開け、H2ガスとO2ガスとの混合ガスを、バッファ室237を介して処理室201内に導入(供給)する。具体的には、バルブ253aを開け、MFC252aにて流量制御しながら、バッファ室237を介して処理室201内へのH2ガスの供給を開始する。同時に、バルブ253bを開け、MFC252bにて流量制御しながら、バッファ室237を介して処理室201内へのO2ガスの供給を開始する。このとき、H2ガスの導入量は、例えば50sccm以上2000sccm以下の範囲内、O2ガスの導入量は、例えば50sccm以上2000sccm以下の範囲である。混合ガス中のH2ガスとO2ガスの体積比率が5:95~95:5であるように制御して、MFC252a,252bそれぞれの開度を調整する。本実施形態では、H2ガスの導入量は400sccm、O2ガスの導入量は600sccmとしている。混合ガス中のH2ガスの体積比率が5:95より小さい場合、後述するような、ポリシリコン膜の電気的特性を改善する効果が十分に得られない可能性がある。また、混合ガス中のH2ガスの体積比率が95:5より大きい場合、後述するような、下地のシリコン酸化膜へのダメージを低減する等の効果が得られない可能性がある。
H2ガスとO2ガスの混合ガスの導入を開始して所定時間経過後(例えば数秒経過後)、共振コイル212に対して高周波電源273からRFセンサ272を介して、高周波電力の印加を開始する。このとき、例えば27.12MHzの高周波電力を、0.5KW以上3.5KW以下の範囲内の電力で印加する。ここでは2.5KWの電力を印加する。これにより、プラズマ生成空間201a内に誘導磁界が形成され、かかる誘導磁界で、プラズマ生成空間の共振コイル212の電気的中点に相当する高さ位置にドーナツ状の誘導プラズマが励起される。励起されたプラズマによりH2ガス、O2ガスは活性化されて解離し、水素原子(H)と酸素原子(O)を含む活性種、水素原子を含む活性種、水素イオン、酸素原子を含む活性種、酸素イオン、等の反応種(例えばOH及びH等)が生成される。生成された1又は複数の反応種の群の中には水素原子と酸素原子が含まれている。
次に、窒化ガスとしての窒素原子を含有するガス(窒素含有ガス)の供給を開始する。本実施形態では、窒素含有ガスとしてN2ガスを用いる。具体的には次の通りである。
バルブ243a,253cを開け、N2ガスを、バッファ室237を介して処理室201内に導入(供給)する。具体的には、バルブ253cを開け、MFC252cにて流量制御しながら、バッファ室237を介して処理室201内へのN2ガスの供給を開始する。このとき、N2ガスの導入量は、例えば50sccm以上3000sccm以下の範囲内である。本実施形態では、N2ガスの導入量は0.2slmとしている。
N2ガスの導入を開始して所定時間経過後(例えば数秒経過後)、共振コイル212に対して高周波電源273からRFセンサ272を介して、高周波電力の印加を開始する。このとき、例えば高周波電力を1500W印加する。その後、所定の処理時間、例えば10秒から1200秒が経過したら、高周波電源273からの電力の出力を停止して、処理室201内におけるプラズマ放電を停止する。本実施形態では120秒としている。また、バルブ253cを閉めて、N2ガスの処理室201内への供給を停止する。
所定の処理時間が経過してN2ガスの供給を停止したら、ガス排気管231を用いて処理室201内を真空排気する。これにより、処理室201内のH2ガス、O2ガスや、その他の残留物が含まれる排ガス等を処理室201外へと排気する。その後、APCバルブ242の開度を調整し、処理室201内の圧力を処理室201に隣接する真空搬送室(ウエハ200の搬出先。図示せず)と同じ圧力に調整する。
処理室201内が所定の圧力となったら、サセプタ217をウエハ200の搬送位置まで下降させ、ウエハ突上げピン266上にウエハ200を支持させる。そして、ゲートバルブ244を開き、図中省略の搬送機構を用いてウエハ200を処理室201外へ搬出する。このとき、処理室201内を不活性ガスであるN2ガス等でパージしながらウエハ200の搬出を行ってもよい。以上により、本実施形態に係る基板処理工程を終了する。
図6及び図7は、本実施形態に係る基板処理工程で処理されたウエハと、比較例に係る基板処理工程で処理されたウエハの、ポリシリコン膜とシリコン酸化膜中の成分濃度をSIMS(Secondary Ion Mass Spectrometry)で分析し、比較して示した図である。図6は、水素濃度を分析し、比較して示した図であって、図7は、酸素濃度を分析し、比較して示した図である。図6の縦軸は水素濃度を、図7の縦軸は酸素濃度を示している。また、図6と図7の横軸はそれぞれポリシリコン膜表面からの深さを示しており、「Poly-Si」と表記された領域がポリシリコン膜が形成された領域(深さ)を、「SiO」と表記された領域がシリコン酸化膜が形成された領域(深さ)を示している。
本実施形態によれば、以下に示す1つまたは複数の効果を奏する。
Claims (12)
- シリコン酸化膜上に形成され、前記シリコン酸化膜との接面と、前記接面に対向する露出面と、を有するポリシリコン膜が形成されている基板を準備する工程と、
水素原子と酸素原子を含有するガスをプラズマ励起することにより生成された反応種を前記ポリシリコン膜の露出面に供給する工程と、
を有する半導体装置の製造方法。 - 前記水素原子と酸素原子を含有するガスは、水素含有ガスと酸素含有ガスの混合ガスである、請求項1記載の方法。
- 前記水素原子と酸素原子を含有するガスは、水素ガスと酸素ガスの混合ガスである、請求項1記載の方法。
- 前記シリコン酸化膜と前記ポリシリコン膜は、トレンチ構造又は筒状構造の内壁側面に、前記トレンチ構造又は筒状構造の外側から中心側に向かって、前記シリコン酸化膜、前記ポリシリコン膜の順番に積層されて形成されている、請求項1記載の方法。
- 前記基板には、コントロールゲートと、第1絶縁膜と、トラップ層と、第2絶縁膜である前記シリコン酸化膜と、チャネル部である前記ポリシリコン膜とが積層された構造が形成されている、請求項1記載の方法。
- 前記ポリシリコン膜の少なくとも一部の厚さは7nm以下である、請求項1記載の方法。
- 前記反応種を前記ポリシリコン膜の露出面に供給する工程の後において、窒素原子を含有するガスをプラズマ励起することにより生成された反応種を前記ポリシリコン膜の露出面に供給する工程と、を更に有する、請求項1記載の方法。
- 前記基板を準備する工程は、前記水素原子と酸素原子を含有するガスがプラズマ励起されるプラズマ生成空間を有する処理室へ前記基板を搬入し、前記プラズマ生成空間の外周に設けられている、高周波電力の波長の整数倍の電気長を有するコイルの下端より下の位置に、前記基板を載置する工程を備え、
前記反応種を前記ポリシリコン膜の露出面に供給する工程は、前記水素原子と酸素原子を含有するガスを前記プラズマ生成空間に供給する工程と、前記コイルに前記高周波電力を印加して、前記プラズマ生成空間において前記水素原子と酸素原子を含有するガスをプラズマ励起する工程と、前記水素原子と酸素原子を含有するガスのプラズマ励起を開始した後、前記コイルが共振状態を維持するように前記コイルに印加される前記高周波電力の周波数を制御する工程とを備える、
請求項1記載の方法。 - 前記水素原子と酸素原子を含有するガスにおける水素原子と酸素原子の比率は5:95~95:5の範囲である、請求項1記載の方法。
- 前記混合ガスにおける前記水素ガスと前記酸素ガスの体積比率は5:95~95:5の範囲である、請求項3記載の方法。
- シリコン酸化膜上に形成され、前記シリコン酸化膜との接面と、前記接面に対向する露出面と、を有するポリシリコン膜が形成されている基板を準備する手順と、
水素原子と酸素原子を含有するガスをプラズマ励起することにより生成された反応種を前記ポリシリコン膜の露出面に供給する手順と、
をコンピュータによって基板処理装置に実行させるプログラムを記録した、コンピュータにより読み取り可能な記録媒体。 - 供給された処理ガスがプラズマ励起されるプラズマ生成空間と、前記プラズマ生成空間に連通し基板が載置される基板処理空間と、を有する基板処理室と、
前記プラズマ生成空間の外周に設けられ、印加される高周波電力の波長の整数倍の電気長を有するコイルと、
前記コイルに高周波電力を印加する高周波電源と、
前記コイルに印加される高周波電力の周波数が前記コイルの共振周波数を維持するように、前記高周波電源を制御するよう構成される周波数制御部と、
前記プラズマ生成空間に、前記処理ガスとして水素原子と酸素原子を含有するガスを供給するガス供給部と、
シリコン酸化膜上に形成され、前記シリコン酸化膜との接面と、前記接面に対向する露出面と、を有するポリシリコン膜が形成されている前記基板が載置されるように構成された基板載置台と、
前記基板載置台を制御して前記基板を前記コイルの下端より下の位置に保持させた後、前記ガス供給部を制御して前記処理ガスを前記プラズマ生成空間に供給すると共に、前記高周波電源を制御して前記コイルに高周波電力を印加するよう構成された制御部と、
を備える基板処理装置。
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