WO2017145175A3 - Method of varying resonant frequency in capacitance type radio frequency (rf) micro-electro-mechanical system (mems) switches - Google Patents

Method of varying resonant frequency in capacitance type radio frequency (rf) micro-electro-mechanical system (mems) switches Download PDF

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Publication number
WO2017145175A3
WO2017145175A3 PCT/IN2016/050401 IN2016050401W WO2017145175A3 WO 2017145175 A3 WO2017145175 A3 WO 2017145175A3 IN 2016050401 W IN2016050401 W IN 2016050401W WO 2017145175 A3 WO2017145175 A3 WO 2017145175A3
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WO
WIPO (PCT)
Prior art keywords
mems
electro
rf
micro
resonant frequency
Prior art date
Application number
PCT/IN2016/050401
Other languages
French (fr)
Other versions
WO2017145175A2 (en
Inventor
Sarath GOPALAKRISHNAN
Deleep Ramachandran NAIR
Amitava Das GUPTA
Original Assignee
INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT Madras)
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Publication date
Priority to IN201641006466 priority Critical
Priority to IN201641006466 priority
Application filed by INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT Madras) filed Critical INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT Madras)
Publication of WO2017145175A2 publication Critical patent/WO2017145175A2/en
Publication of WO2017145175A3 publication Critical patent/WO2017145175A3/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezo-electric relays

Abstract

Embodiments herein provide a method of varying resonant frequency in a capacitance type radio frequency (RF) Micro-Electro-Mechanical System (MEMS) switch. The method includes encapsulating a dielectric layer in the MEMS switch with a floating metal. Further, the method includes varying, the length of the floating metal. Furthermore, the method includes varying the resonant frequency of the MEMS capacitive switch based on the varied length of the floating metal.
PCT/IN2016/050401 2016-02-24 2016-11-16 Method of varying resonant frequency in capacitance type radio frequency (rf) micro-electro-mechanical system (mems) switches WO2017145175A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IN201641006466 2016-02-24
IN201641006466 2016-02-24

Publications (2)

Publication Number Publication Date
WO2017145175A2 WO2017145175A2 (en) 2017-08-31
WO2017145175A3 true WO2017145175A3 (en) 2017-10-26

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ID=59686070

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IN2016/050401 WO2017145175A2 (en) 2016-02-24 2016-11-16 Method of varying resonant frequency in capacitance type radio frequency (rf) micro-electro-mechanical system (mems) switches

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WO (1) WO2017145175A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7265647B2 (en) * 2004-03-12 2007-09-04 The Regents Of The University Of California High isolation tunable MEMS capacitive switch
US8368491B2 (en) * 2010-04-22 2013-02-05 Raytheon Company Systems and methods for providing high-capacitance RF MEMS switches

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7265647B2 (en) * 2004-03-12 2007-09-04 The Regents Of The University Of California High isolation tunable MEMS capacitive switch
US8368491B2 (en) * 2010-04-22 2013-02-05 Raytheon Company Systems and methods for providing high-capacitance RF MEMS switches

Also Published As

Publication number Publication date
WO2017145175A2 (en) 2017-08-31

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