WO2017094646A1 - 加工装置 - Google Patents
加工装置 Download PDFInfo
- Publication number
- WO2017094646A1 WO2017094646A1 PCT/JP2016/085119 JP2016085119W WO2017094646A1 WO 2017094646 A1 WO2017094646 A1 WO 2017094646A1 JP 2016085119 W JP2016085119 W JP 2016085119W WO 2017094646 A1 WO2017094646 A1 WO 2017094646A1
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- WIPO (PCT)
- Prior art keywords
- grinding
- wafer
- stage
- rough grinding
- rough
- Prior art date
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- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 230000005484 gravity Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0046—Column grinding machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/14—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by liquid or gas pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Definitions
- the present invention relates to a processing apparatus that performs rough grinding and fine grinding on a wafer, and in particular, relates to a processing apparatus that continuously performs rough grinding and fine grinding without damaging the wafer.
- wafer such as a silicon wafer (hereinafter referred to as “wafer”) into a thin film
- backside grinding is performed by grinding the backside of the wafer.
- Patent Document 1 includes a cassette storage stage, an alignment stage, a rough grinding stage, a precision grinding stage, a polishing stage, a polishing cloth cleaning stage, a polishing cloth dressing stage, and a wafer cleaning stage.
- a planar processing apparatus in which an index table moves a wafer to each stage.
- two grindstones that are cantilevered at the tip of a grindstone feeding device disposed outside the index table are provided, and one grindstone roughly grinds the wafer, and the other grindstone Precisely grinds the wafer.
- a column 91, a spindle 93 cantilevered on the column 91 via a ball screw 92, a grindstone 94 attached to the lower end of the spindle 93, The spindle 793 is lowered by the ball screw 92 while the spindle 93 is rotated, and the wafer W placed on the chuck 95 is ground by the grindstone 94.
- the two grindstones are connected via the grindstone feeding mechanism, when the grindstone vibrates during the grinding process, the two grindstones resonate to amplify the amplitude, which may reduce the wafer processing accuracy. .
- the invention according to claim 1 is a processing apparatus for performing rough grinding and fine grinding on a wafer, comprising: a rough grinding stage; a fine grinding stage; At least, an index table for moving the wafer from the rough grinding stage to the fine grinding stage, a column provided across the rough grinding stage and the fine grinding stage, and a rough grinding stage A process comprising: rough grinding means for rough grinding the wafer provided above the column; and fine grinding means for fine grinding the wafer provided on the column above the precision grinding stage.
- the column is provided so as to straddle the coarse grinding stage and the fine grinding stage of the index table, the coarse grinding means is supported by the column above the coarse grinding stage, and the fine grinding means is located above the fine grinding stage. It is supported by the column. That is, the point where the column supports the rough grinding means and the processing point of the rough grinding means are arranged close to each other, and the point where the column supports the fine grinding means and the processing point of the fine grinding means are arranged close to each other.
- the chuck for holding the wafer can be formed with high rigidity, and the processing conditions such as the tilt angle of the wafer with respect to the grindstone are rough grinding. Since it is unified with precision grinding, the throughput of grinding is improved. Further, since the column can be formed with a larger diameter and higher rigidity than the index table, the resonance of the rough grinding means and the fine grinding means is suppressed, and the wafer can be ground with high quality.
- a first constant pressure feed that is interposed between the rough grinding means and the column and feeds the rough grinding means at a constant pressure.
- a processing apparatus having a mechanism is provided.
- the first constant pressure feed mechanism is By raising the grinding means temporarily, the wafer is subjected to ductile mode grinding in a state where the rough grinding means is floating, so that stable grinding can be performed without damaging the wafer.
- the rough grinding means is disposed on the outer periphery of the rough grinding means so as to sandwich a processing point of the rough grinding means. Is provided with at least two first guides that are slidably supported in the vertical direction.
- the first guide supports the rough grinding means so as to be slidable only in the vertical direction, so that the vertical drag generated during the grinding process is achieved. Since the tilting of the rough grinding means due to the above is suppressed, the wafer can be ground into a high-quality product. In addition, since the first guide limits the oscillation of the rough grinding means only in the vertical direction, it is possible to suppress the influence of vibration on the fine grinding means arranged in parallel with the rough grinding means.
- the fine grinding device is interposed between the fine grinding device and the column to make the fine grinding device a constant pressure.
- a processing apparatus provided with a second constant pressure feeding mechanism to be fed at a position is provided.
- the second constant pressure feed mechanism temporarily raises the precision grinding means, so that the wafer is subjected to ductile mode grinding in a state where the grinding wheel of the precision grinding means is floating, and thus damages the wafer. And stable grinding.
- the fine grinding means is disposed on an outer periphery so as to sandwich a processing point of the fine grinding means.
- a processing apparatus comprising at least two second guides for supporting a grinding means slidably in a vertical direction with respect to the column.
- the second guide supports the precision grinding means so as to be slidable only in the vertical direction, so that grinding is being performed. Since the tilting of the precision grinding means caused by the vertical drag generated in the wafer is suppressed, the wafer can be ground into a high quality product. Further, since the second guide limits the oscillation of the fine grinding means only in the vertical direction, it is possible to suppress the influence of vibration on the rough grinding means arranged in parallel with the fine grinding means.
- the column is provided so as to straddle the coarse grinding stage and the fine grinding stage of the index table, the coarse grinding means is supported by the column above the coarse grinding stage, and the fine grinding means is provided above the fine grinding stage.
- the tilting of the coarse grinding means and the fine grinding means caused by the vertical drag generated during the grinding process is suppressed, so that the wafer can be ground into a high-quality product.
- the chuck for holding the wafer can be formed with high rigidity, and the processing conditions such as the tilt angle of the wafer with respect to the grindstone are rough grinding. Since it is unified with precision grinding, the throughput of grinding is improved.
- the column can be formed with a larger diameter and higher rigidity than the index table, the resonance of the rough grinding means and the fine grinding means is suppressed, and the wafer can be ground with high quality.
- the top view of the processing apparatus shown in FIG. The perspective view which abbreviate
- the top view of the processing apparatus shown in FIG. The side view which shows a main unit typically.
- the top view which shows a main unit typically.
- the schematic diagram which shows the mode of ductile mode grinding It is a schematic diagram which shows the conventional processing apparatus, (a) is a figure which shows the mode before grinding, (b) is a figure which shows the mode during grinding.
- a processing apparatus is a processing apparatus that performs rough grinding and fine grinding on a wafer in order to achieve the purpose of continuously performing high-quality wafer rough grinding and fine grinding.
- FIG. 1 is a perspective view showing a basic configuration of the processing apparatus 1.
- FIG. 2 is a plan view of the processing apparatus 1.
- FIG. 3 is a perspective view showing the processing apparatus 1 in which the constant pressure feeding mechanism is omitted.
- FIG. 4 is a plan view of the processing apparatus 1 in which the constant pressure feeding mechanism is omitted.
- the processing apparatus 1 continuously grinds the wafer with two grindstones arranged in parallel.
- the processing apparatus 1 forms the thin film by grinding the back surface of the wafer W.
- the wafer W to be ground using the processing apparatus 1 is preferably a silicon wafer, silicon carbide wafer, or the like that exhibits high hardness and high brittleness, but is not limited thereto.
- the processing apparatus 1 includes an index table 2 and a main unit 3 disposed above the index table 2.
- the index table 2 can rotate around a rotary shaft 21 connected to a motor (not shown).
- the index table 2 includes three chucks 22 that are arranged at intervals of 120 degrees on the circumference around the rotation shaft 21.
- the chuck 22 is connected to a vacuum source (not shown) and sucks the wafer W placed on the chuck 22 with a negative pressure.
- the chuck 22 is connected to a motor (not shown) and is rotatable.
- the index table 2 is divided into an alignment stage S1, a rough grinding stage S2, and a fine grinding stage S3.
- a partition plate 23 is disposed between the chucks 22 to prevent the machining liquid used in each stage from splashing on adjacent stages.
- the alignment stage S1 is a stage for transferring the wafer W onto the chuck 22 by a transfer device (not shown) and aligning the wafer W at a predetermined position.
- the wafer W attracted and held on the chuck 22 is sent to the rough grinding stage S2.
- the rough grinding stage S2 is a stage in which the wafer W is rough ground.
- the roughly ground wafer W is sent to the precision grinding stage S3.
- the precision grinding stage S3 is a stage on which the wafer W is precisely ground.
- the finely ground wafer W is sent to the alignment stage S1, and is received from the chuck 22 in a rack (not shown) by a transfer device (not shown).
- the main unit 3 includes an arch-like column 4 arranged so as to straddle the index table 2, rough grinding means 5 attached to the column 4 above the rough grinding stage S2, and column 4 above the fine grinding stage S3. And fine grinding means 6 attached to the.
- the rough grinding means 5 includes a rough grinding wheel 51, a first spindle 52 to which the rough grinding wheel 51 is attached at the lower end, a first spindle feed mechanism 53 that raises and lowers the first spindle 52 in the vertical direction V, It has.
- the rough grinding means 5 is provided with a constant pressure cylinder 54 as a first constant pressure feeding mechanism.
- the fine grinding means 6 includes a fine grinding wheel 61, a second spindle 62 with the fine grinding wheel 61 attached to the lower end, a second spindle feed mechanism 63 that raises and lowers the second spindle 62 in the vertical direction V, It has.
- the precision grinding means 6 is provided with a constant pressure cylinder 64 as a second constant pressure feed mechanism.
- the processing apparatus 1 includes a first guide 7 that supports the first spindle 52 slidably in the vertical direction V, and a second guide 8 that supports the second spindle 62 slidably in the vertical direction V. And are provided.
- the operation of the machining apparatus 1 is controlled by a control unit (not shown).
- the control unit controls each component constituting the processing apparatus 1.
- the control unit includes, for example, a CPU, a memory, and the like.
- the function of the control unit may be realized by controlling using software, or may be realized by operating using hardware.
- the processing apparatus 1 continuously sends the rough grinding stage S2 and the fine grinding stage S3 in this order with the wafer W sucked and held by the chuck 22 of the alignment stage S1 placed on the same chuck 22.
- the chuck 22 for attracting and holding the wafer W can be formed with higher rigidity than other wafer holding devices such as a belt conveyor. As a result, the throughput of the grinding process is improved, and the wafer W can be ground with high quality.
- the column 4 includes a base 41 formed in a U shape in plan view and a central column portion 42 protruding from the center of the base 41, and is formed in an E shape in plan view.
- the base 41 is provided so as to straddle the rough grinding stage S2 and the fine grinding stage S3. Thereby, the alignment stage S1 is exposed to the side of the column 4 in plan view. Therefore, when the wafer W is transferred to the chuck 22 or unloaded from the chuck 22, the transfer device or the like can access the chuck 22 without being interfered with the column 4.
- the base 41 has the rigidity of the base 41 increased by connecting two struts 41 a erected on the outer periphery of the index table 2.
- the central column portion 42 is disposed between the rough grinding stage S2 and the fine grinding stage S3 in plan view.
- the lower end of the central column part 42 is extended to above the index table 2.
- the central column portion 42 may have any length as long as it can secure a length in which front guides 71 and 81 described later can be installed.
- grooves 4b and 4c that are recessed in the vertical direction V are arranged side by side.
- Coarse grinding means 5 is accommodated in the groove 4b.
- the fine grinding means 6 is accommodated in the groove 4c.
- FIG. 5 is a side view of the main unit 3.
- FIG. 6 is a plan view of the main unit 3.
- FIG. 7 is a perspective view showing the upper part of the main unit 3.
- FIG. 8 is a schematic diagram showing a state of ductile mode grinding.
- the rough grinding wheel 51 is configured by arranging a plurality of cup-type wheels at the lower end in the circumferential direction.
- the first spindle 52 includes a saddle 52a with a rough grinding wheel 51 attached to the lower end, and a motor (not shown) provided in the saddle 52a for rotating the rough grinding wheel 51.
- the first spindle feed mechanism 53 includes a nut 53a that connects a saddle 52a and a rear guide 72 described later, a ball screw 53b that moves the nut 53a up and down, and a motor 53c that rotates the ball screw 53b.
- the saddle 53a is lowered.
- the feeding direction D is on a straight line parallel to the vertical direction V through the processing point P1 where the rough grinding wheel 51 processes the wafer W.
- the rotation axis O of the ball screw 53b and the processing point P1 of the rough grinding wheel 51 are arranged on the same straight line in the vertical direction V.
- the main unit 3 is provided with an in-process gauge (not shown) for measuring the thickness of the wafer W.
- an in-process gauge (not shown) for measuring the thickness of the wafer W.
- one constant pressure cylinder 54 is provided on each side in the horizontal direction H with the nut 53a of the first spindle feed mechanism 53 interposed therebetween.
- the constant pressure cylinder 54 suspends the first spindle 52 and the first spindle feed mechanism 53 in the groove 4b.
- the lower end of the piston rod of the constant pressure cylinder 54 is connected to the nut 53a. Since the constant pressure cylinders 54 are provided on both sides in the horizontal direction H across the first spindle feed mechanism 53, the first spindle feed mechanism 53 is moved in the horizontal direction H when the first spindle feed mechanism 53 is raised. Tilt is restricted.
- the constant pressure cylinder 54 is an air cylinder that employs a known configuration including a cylinder, a piston, a piston rod, a compressor, and the like (not shown).
- the constant pressure cylinder 54 raises the piston so that the compressed air filled in the cylinder of the constant pressure cylinder 54 is pushed back when a back component force acting on the rough grinding wheel 51 during grinding is transmitted to the piston rod.
- the driving pressure of the constant pressure cylinder 54 is set to a value corresponding to the back component force acting on the rough grinding wheel 51 when the rough grinding wheel 51 is cut by the critical cutting depth (Dc value) of the wafer W.
- the Dc value varies depending on the material of the wafer W, and is 0.09 ⁇ m for a silicon wafer and 0.15 ⁇ m for a silicon carbide wafer, for example.
- the rough grinding wheel 51 When the rough grinding wheel 51 is going to cut deeper than a desired grinding amount (for example, Dc value) and the back component force acting on the rough grinding wheel 51 becomes excessive, the first spindle 52 and the first spindle Since the feed mechanism 53 temporarily rises, the rough grinding wheel 51 is prevented from being cut to a value greater than or equal to the Dc value.
- a desired grinding amount for example, Dc value
- the first guide 7 includes a front guide 71 disposed on the front surface of each of the base portion 41 and the central column portion 42, and one rear guide 72 disposed in the groove 4b.
- the front guide 71 and the rear guide 72 are, for example, linear guides.
- a saddle 52 a is directly attached to the front guide 71.
- the saddle 52a is attached to the rear guide 72 via a nut 54a.
- the front guide 71 and the rear guide 72 are provided in parallel to each other along the vertical direction V. As a result, the front guide 71 and the rear guide 72 restrict the saddle 52a to move along the vertical direction V. Further, the front guide 71 and the rear guide 72 are arranged so as to sandwich the processing point P1 of the rough grinding wheel 51.
- the first spindle 52 is disposed in a triangle T ⁇ b> 1 formed by the front guide 71 and the rear guide 72 in a plan view.
- the center of gravity G1 of the first spindle 52 is disposed in a triangle T1 formed by the front guide 71 and the rear guide 72 in plan view.
- the first guide 7 may be anything as long as the tilt of the first spindle 52 can be suppressed.
- two linear guides are provided, and a straight line connecting these linear guides in plan view. You may arrange
- the back component force acting on the rough grinding wheel 51 becomes excessive.
- the spindle 52 and the first spindle feed mechanism 53 are configured to escape in the vertical direction V.
- the center of gravity G1 of the first spindle 52 is disposed within the triangle T1 formed by the front guide 71 and the rear guide 72, so that the shaft of the rough grinding means 5 is prevented from falling.
- the constant pressure cylinder 54 temporarily raises the first spindle 52 and the first spindle feed mechanism 53, and the weight of the rough grinding means 5 is increased.
- the wafer W is subjected to ductile mode grinding in a so-called floating state in which the abrasive grains of the rough grinding wheel 51 do not excessively contact the wafer W during grinding. Can do.
- the precision grinding means 6 and the second guide 8 will be described with reference to FIGS. Note that the basic configuration of the fine grinding means 6 corresponds to the basic configuration of the rough grinding means 5, and thus redundant description is omitted.
- the precision grinding wheel 61 is configured by arranging a plurality of cup-type grinding wheels at the lower end in the circumferential direction.
- the second spindle 62 includes a saddle 62a having a precision grinding wheel 61 attached to the lower end thereof, and a motor (not shown) that is provided in the saddle 62a and rotates the precision grinding wheel 61.
- the second spindle feed mechanism 63 has the same configuration as that of the first spindle feed mechanism 53, and rotates a nut (not shown) that connects the saddle 62a and the rear guide 82, a ball screw (not shown) that raises and lowers the nut, and the ball screw. And a motor 63a.
- the rotation axis of the ball screw and the processing point P2 of the fine grinding wheel 61 are arranged on the same straight line in the vertical direction V.
- the operation of the motor 63a is controlled based on the film thickness measured by the above-described in-process gauge.
- the constant pressure cylinders 64 are provided one on each side in the horizontal direction H across the second spindle feed mechanism 63, and are interposed between the column 4 and the nut.
- the constant pressure cylinder 64 suspends the second spindle 62 and the second spindle feed mechanism 63 in the groove 4c.
- the constant pressure cylinder 64 has the second spindle 62 and the second spindle feed mechanism 63. Is temporarily raised, the fine grinding wheel 61 is prevented from being cut into the Dc value or more.
- the second guide 8 includes a front guide 81 disposed on the front surface of each of the base portion 41 and the central column portion 42, and a single rear guide 82 disposed in the groove 4b.
- the front guide 81 and the rear guide 82 are, for example, linear guides.
- a saddle 62 a is directly attached to the front guide 81.
- a saddle 62 a is attached to the rear guide 82 via a nut of the second spindle feed mechanism 63.
- the front guide 81 and the rear guide 82 are provided parallel to each other along the vertical direction V. Accordingly, the front guide 81 and the rear guide 82 restrict the saddle 62a to move along the vertical direction V. Further, the front guide 81 and the rear guide 82 are arranged so as to sandwich the processing point P2 of the precision grinding wheel 61.
- the second spindle 8 has a second spindle 62 disposed in a triangle T2 formed by a front guide 81 and a rear guide 82 in plan view.
- the center of gravity G2 of the second spindle 62 is disposed in a triangle T2 formed by the front guide 81 and the rear guide 82 in plan view.
- the front guide 81 and the rear guide 82 arranged around the second spindle 62 suppress the axis fall of the second spindle 62.
- the second guide 8 may be anything as long as the second spindle 62 can be prevented from tilting.
- two linear guides are provided, and a straight line connecting these linear guides in plan view. You may arrange
- the processing point P2 of the fine grinding wheel 61 is arranged on the rotation axis of the ball screw of the second spindle feed mechanism 63, the back component force acting on the fine grinding wheel 61 becomes excessive.
- the second spindle 62 and the second spindle feed mechanism 63 are configured to escape in the vertical direction V.
- the center of gravity G2 of the second spindle 62 is disposed within the triangle T2 formed by the front guide 81 and the rear guide 82, so that the axis collapse of the precision grinding means 6 is suppressed.
- the constant pressure cylinder 64 temporarily raises the second spindle 62 and the second spindle feed mechanism 63, and the weight of the precision grinding means 6 is increased. Since the rough grinding is performed at a constant pressure, the wafer W can be subjected to ductile mode grinding in a so-called floating state in which the abrasive grains of the fine grinding wheel 61 do not excessively contact the wafer W during the grinding.
- a rough grinding wheel 51 having a grain size of # 400 and a bonding degree M is prepared as rough grinding processing conditions, the rotation speed of the first spindle 52 is 2000 rpm, the rotation speed of the chuck 32 is 301 rpm, and the driving pressure of the constant pressure cylinder 55 is set.
- the feed rate of the first spindle feed mechanism 53 was set to 0.4 MPa, 1 ⁇ m / s, and the grinding amount (thickness) was 40 ⁇ m, the arithmetic average roughness Ra was 34.5 nm.
- a precision grinding wheel 61 having a grain size of # 3000 and a coupling degree of J is prepared as processing conditions for fine grinding.
- the rotational speed of the second spindle 62 is 2000 rpm
- the rotational speed of the chuck 32 is 301 rpm
- the constant pressure cylinder 65 is driven.
- the feed speed of the second spindle feed mechanism 63 was set to 0.4 ⁇ m / s
- the grinding amount (thickness) was 10 ⁇ m
- the arithmetic average roughness Ra was 6.9 nm.
- the column 4 is provided so as to straddle the rough grinding stage S2 and the fine grinding stage S3 of the index table 2, and the rough grinding means 5 is supported by the front guide 71 and the rear guide 72.
- the fine grinding means 6 is supported by the front guide 81 and the rear guide 82. That is, the point where the column 4 supports the rough grinding means 5 and the processing point P1 of the rough grinding means 5 are arranged close to each other, and the point where the column 4 supports the fine grinding means 6 and the processing point of the fine grinding means 6 P2 is arranged nearby.
- the wafer W can be ground into a high-grade product.
- the chuck 22 for holding the wafer W can be formed with high rigidity, and the wafer for the rough grinding wheel 51 and the fine grinding wheel 61 can be formed. Since the processing conditions such as the tilt angle of W are unified, the throughput of grinding processing is improved. Furthermore, since the column 4 can be formed with high rigidity, the resonance of the rough grinding means 5 and the fine grinding means 6 is suppressed, and the wafer W can be ground with high quality.
- the vibration periods of the rough grinding means 5 and the fine grinding means 6 are shifted, so that the rough grinding means 5 and the fine grinding means 6 are further prevented from resonating. Can do.
- the specific configuration of the constant pressure feed mechanism is not limited to that described above, and any configuration may be used as long as the spindle can be raised so as to release an excessive back force acting on the grindstone. Absent.
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Abstract
Description
2 ・・・ インデックステーブル
21・・・ 回転軸
22・・・ チャック
23・・・ 仕切板
3 ・・・ メインユニット
4 ・・・ コラム
4a・・・ 前面
4b・・・ (粗研削手段を収容する)溝
4c・・・ (精研削手段を収容する)溝
41・・・ 基部
41a・・・支柱
42・・・ 中央柱部
5 ・・・ 粗研削手段
51・・・ 粗研削砥石
52・・・ 第1のスピンドル
53・・・ 第1のスピンドル送り機構
53a・・・ナット
53b・・・ボールネジ
53c・・・モータ
54・・・ 定圧シリンダ(第1の定圧送り機構)
6 ・・・ 精研削手段
61・・・ 精研削砥石
62・・・ 第2のスピンドル
63・・・ 第2のスピンドル送り機構
63a・・・モータ
64・・・ 定圧シリンダ(第2の定圧送り機構)
7 ・・・ 第1のガイド
71・・・ 前方ガイド
72・・・ 後方ガイド
8 ・・・ 第2のガイド
81・・・ 前方ガイド
82・・・ 後方ガイド
H ・・・ 水平方向
G1・・・ (第1のスピンドルの)重心
G2・・・ (第2のスピンドルの)重心
O ・・・ ボールネジの回転軸
P1・・・ (粗研削砥石の)加工点
P2・・・ (精研削砥石の)加工点
S1・・・ アライメントステージ
S2・・・ 粗研削ステージ
S3・・・ 精研削ステージ
T1・・・ 第1のガイドが形成する三角形
T2・・・ 第2のガイドが形成する三角形
V ・・・ 鉛直方向
W ・・・ ウェハ
Claims (5)
- ウェハに粗研削加工及び精研削加工を行う加工装置であって、
粗研削ステージと精研削ステージとが少なくとも設けられ、前記粗研削ステージから前記精研削ステージに前記ウェハを移動させるインデックステーブルと、
前記粗研削ステージ及び前記精研削ステージの上方を跨ぐように設けられたコラムと、
前記粗研削ステージの上方で前記コラムに設けられ、前記ウェハを粗研削加工する粗研削手段と、
前記精研削ステージの上方で前記コラムに設けられ、前記ウェハを精研削加工する精研削手段と、
を備えていることを特徴とする加工装置。 - 前記粗研削手段と前記コラムとの間に介装されて、前記粗研削手段を一定圧力で送る第1の定圧送り機構を備えていることを特徴とする請求項1記載の加工装置。
- 前記粗研削手段の加工点を挟むように前記粗研削手段の外周に配置され、前記粗研削手段を前記コラムに対して鉛直方向に摺動可能に支持する少なくとも2つの第1のガイドを備えていることを特徴とする請求項1又は2記載の加工装置。
- 前記精研削手段と前記コラムとの間に介装されて、前記精研削手段を一定圧力で送る第2の定圧送り機構を備えていることを特徴とする請求項1乃至3の何れか1項記載の加工装置。
- 前記精研削手段の加工点を挟むように前記精研削手段の外周に配置され、前記精研削手段を前記コラムに対して鉛直方向に摺動可能に支持する少なくとも2つの第2のガイドを備えていることを特徴とする請求項1乃至4の何れか1項記載の加工装置。
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JP6754272B2 (ja) * | 2016-10-24 | 2020-09-09 | 株式会社ディスコ | 研削装置 |
WO2019142747A1 (ja) * | 2018-01-19 | 2019-07-25 | Agc株式会社 | 樹脂付金属箔の製造方法 |
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