WO2017088286A1 - 一种倒装芯片的倒装封装结构及倒装芯片 - Google Patents

一种倒装芯片的倒装封装结构及倒装芯片 Download PDF

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WO2017088286A1
WO2017088286A1 PCT/CN2016/070263 CN2016070263W WO2017088286A1 WO 2017088286 A1 WO2017088286 A1 WO 2017088286A1 CN 2016070263 W CN2016070263 W CN 2016070263W WO 2017088286 A1 WO2017088286 A1 WO 2017088286A1
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Prior art keywords
flip chip
chip
flip
die
temperature measuring
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PCT/CN2016/070263
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English (en)
French (fr)
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孟真
刘谋
张兴成
唐璇
阎跃鹏
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中国科学院微电子研究所
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Priority to US15/779,030 priority Critical patent/US20180350711A1/en
Publication of WO2017088286A1 publication Critical patent/WO2017088286A1/zh

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Definitions

  • the present invention relates to the field of chip packaging technology, and particularly relates to a flip chip package structure and a flip chip, which are suitable for use in a case where the operating temperature of a die of a chip needs to be monitored, and is particularly suitable for a die requiring real-time monitoring of a chip.
  • the temperature and the automatic thermal control technology field that automatically controls the working state of the chip or the working state of the external heat dissipating device of the chip according to the monitored temperature value.
  • the packaging technology of chips is also more and more diversified, because the chip flipping technology has shortened the interconnect length in the package, and thus can better adapt to the development needs of high integration, and has been widely used.
  • the chip flip-chip technology directly forms a solder joint array as an input and output terminal on the active layer of the chip transistor and solders it on the package substrate in an inverted manner, thereby realizing electrical connection between the chip and the substrate.
  • the transistor of the chip when the transistor of the chip operates, a certain proportion of the electrical energy is converted into thermal energy, so that the die temperature of the chip rises, and the semiconductor materials constituting the die have their respective operating temperature intervals, when the temperature thereof is higher than In the normal temperature range, the operating state of the transistor deteriorates, and if the temperature rises further, the transistor will be burned. Therefore, in order to ensure the reliability of the chip operation, it is necessary to monitor the temperature of the chip in real time, so as to control the external heat dissipation device of the chip in real time according to the monitoring temperature to accelerate the heat dissipation to ensure the normal operation of the chip.
  • Conventional chip temperature measurement is usually performed outside the package (as shown in Figure 1), such as mounting the temperature measuring component inside a heat sink attached to the package housing or directly mounting the temperature measuring component on the surface of the package housing.
  • the temperature measuring component is mounted on a carrier circuit board of the flip chip.
  • the heat generated by the chip is mainly derived from the active layer of the transistor of the die in the chip, since the base insulating layer and the package casing of the die are both A certain thermal resistance makes the temperature outside the chip lower than the actual temperature of the active layer of the transistor inside the chip. Therefore, the temperature measuring component is mounted on the package housing.
  • the internal temperature of the heat dissipating device or directly mounted on the surface of the package can not accurately measure the actual temperature of the flip chip die; and the way the temperature measuring component is mounted on the carrier circuit board of the chip can only measure the air temperature around the chip. The measurement error is larger.
  • the existing chip temperature measurement method cannot accurately measure the temperature when the flip chip die is working.
  • the invention provides a flip chip package structure and a flip chip, which can accurately measure the operating temperature of the flip chip die by properly setting the mounting position of the temperature measuring component.
  • the present invention provides a flip chip package structure comprising a package substrate, a die soldered to the package substrate in a flip chip manner, a package housing, and at least one temperature measuring component, the at least one temperature The measuring component is disposed in the first space in the package substrate below the die, and the remaining space in the first space except the space occupied by the at least one temperature measuring component is filled with the insulating heat conductive material.
  • the present invention provides a flip chip comprising the flip chip package structure of the flip chip described above.
  • the flip-chip package structure and flip chip of the present invention include a package substrate, a die soldered on the package substrate in a flip chip manner, a package housing, and at least one temperature measuring component, the at least one temperature The measuring component is disposed in the first space in the package substrate below the die, and the remaining space in the first space except the space occupied by the at least one temperature measuring component is filled with the insulating heat conductive material.
  • the mounting method avoids the influence of the thermal resistance of the base insulating layer and the plastic sealing shell on the one hand, and avoids merely measuring the temperature of the air around the flip chip as the actual error of the flip chip. Large error, therefore, designed by the present invention
  • the temperature measurement structure for the flip chip can more accurately measure the actual temperature generated when the flip chip die operates.
  • FIG. 1 is a schematic structural view of a mounting method of a temperature measuring component of a flip chip in the prior art
  • FIG. 2 is a schematic view showing an embodiment of a flip chip package structure of a flip chip according to the present invention
  • FIG. 3 is a schematic structural view of another embodiment of a flip-chip package structure of a flip chip according to the present invention.
  • FIG. 4 is a schematic structural view of a circuit region and a pad region of an active layer of a transistor in the above embodiment
  • FIG. 9 show a manufacturing process of a flip chip package structure of a flip chip according to the present invention.
  • an embodiment of the present invention provides a flip chip package structure including a package substrate 10, a die 11 flip-chip soldered on the package substrate 10, a package housing 12, and at least a temperature measuring component 13 disposed in the first space 14 in the package substrate 10 below the die 11, wherein the at least one temperature is removed in the first space 14
  • the remaining space other than the space occupied by the measuring element 13 is filled with an insulating heat conductive material.
  • the flip-chip package structure of the flip chip of the present invention includes flip-chip bonding to the package substrate a die, the package substrate, a package housing, and at least one temperature measuring component, the at least one temperature measuring component being disposed in a first space in the package substrate under the die, the first The remaining space in the space excluding the space occupied by the at least one temperature measuring element is filled with an insulating heat conductive substance.
  • the temperature measuring structure for flip chip design designed by the present invention can more accurately measure the actual temperature generated when the flip chip die operates.
  • the present invention provides a flip chip package structure comprising a package substrate 10, a die 21 soldered on the package substrate 20 in a flip chip manner, a package case 22, and at least one temperature.
  • the package substrate 20 is formed by laminating a plurality of layers of insulating dielectric layers.
  • four layers of insulating dielectric layers are used as an example.
  • the package substrate 20 is composed of an insulating dielectric layer of 4, wherein the die 21 is separated from the die 21 .
  • the first layer of the insulating dielectric layer 201, the second insulating dielectric layer 202, the third insulating dielectric layer 203, and the fourth insulating dielectric layer 204 are sequentially disposed, and the at least one temperature measuring element 23 is disposed in the In the first space 24 of the package substrate 20 below the circuit region 212-2 of the transistor active layer 212, the first space 24 is located at the first insulating dielectric layer closest to the die 21.
  • the interior of the 201, the at least one of the first spaces 24 is removed
  • the remaining space other than the space occupied by the measuring element 23 is filled with an insulating thermal conductive adhesive to prevent a short circuit between the flip chip die and the temperature measuring chip.
  • the insulating thermal conductive adhesive may also use other insulating and thermally conductive materials. instead.
  • a heat curing process is performed to cure the insulating thermal conductive adhesive.
  • the pad region 212-1 of the transistor active layer 212 is interconnected with the package substrate 20 through the solder ball 25, specifically, the pad region 212-1 of the transistor active layer 212 passes through the solder ball 25 and the The first insulating layer 201 is interconnected to realize interconnection of the die 21 and the package substrate 20.
  • conductor interconnections 27 may be disposed on both sides of each layer of the insulating dielectric layer, and conductor vias 28 may be disposed inside each layer of the insulating dielectric layer to form An interconnect structure for connecting the at least one temperature measuring component 23 to the external leads 26 of the flip chip. In this way, it is possible to drive the respective temperature measuring elements 23 described above by the external pins 26 and to read the monitored temperature values from the respective temperature measuring elements.
  • each of the temperature measuring chips 23 is smaller than the thickness of the first insulating dielectric layer 201, and each of the temperature measuring chips 23 is a die or a packaged chip.
  • the flip-chip package structure of the flip-chip provided by the present invention is compared with the prior art by mounting the temperature measuring chip in a recessed space in the package substrate under the die. There is only one layer of insulating and heat conducting layer between the temperature measuring device and the die. It can be seen that the mounting method avoids the influence of the thermal resistance of the base insulating layer and the plastic sealing shell on the one hand, and avoids only measuring the temperature of the air around the flip chip on the other hand. As a large error caused by the actual error of the flip chip, the temperature measuring structure for flip chip design designed by the present invention can more accurately measure the actual temperature generated when the flip chip die operates.
  • the manufacturing process of the flip-chip package structure of the flip chip in the above embodiment is as follows:
  • the at least one temperature measuring component 23 (shown in FIG. 5) is disposed in the package substrate 20.
  • the remaining space except the space occupied by the at least one temperature measuring component 23 is filled with the insulating thermal conductive adhesive, and the insulating thermal conductive adhesive is injected into the remaining space to perform a heating and curing process (eg, Figure 7)).
  • the package housing 22 (shown in FIG. 8) is formed on the upper portion of the package substrate 20.
  • the external lead 26 is formed on the lower portion of the package substrate 20 (as shown in FIG. 9).
  • the present invention also provides a flip chip, which comprises the flip chip package structure of the above flip chip.

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Abstract

一种倒装芯片的倒装封装结构及倒装芯片，涉及芯片封装技术领域，解决了现有芯片温度测量方式不准确测量倒装芯片的裸片工作时的温度的缺陷。所述芯片倒装封装结构包括封装基板（10），以倒装方式焊接于所述封装基板（10）上的裸片（11）、封装外壳（12）以及至少一个温度测量元件（13），其特征在于，所述至少一个温度测量元件（13）设置在所述封装基板（10）中的位于所述裸片（11）下方的第一空间（14）中，所述第一空间（14）中除去所述至少一个温度测量元件（13）所占用的空间以外的剩余空间填充有绝缘导热物质。

Description

一种倒装芯片的倒装封装结构及倒装芯片 技术领域
本发明涉及芯片封装技术领域，尤其涉及一种倒装芯片的倒装封装结构及倒装芯片，适用于需要监测芯片的裸片的工作温度的情形中，特别适用于需要实时监测芯片的裸片的温度并根据监测的温度值自动控制芯片自身工作状态或芯片外部散热设备的工作状态的自动散热控制技术领域。
背景技术
随着集成电路集成度的增加，芯片的封装技术也越来越多样化，因为芯片倒装技术具有缩短封装内的互连长度，进而能够更好地适应高度集成的发展需求，目前已广泛应用于芯片封装领域。芯片倒装技术是在芯片晶体管有源层上直接制作焊点阵列作为输入、输出端子并以倒扣方式焊接于封装基板上，从而实现芯片与基板间的电连接。
然而，芯片的晶体管工作时会将一定比例的电能转化为热能，从而使得芯片的裸片温度升高，而构成裸片的半导体材料都有其各自的工作温度区间，当其所处温度高于正常温度区间时，晶体管的运行状态就会恶化，如果温度进一步升高，晶体管将会被烧毁。因此为了保证芯片运行的可靠性，需要实时监测芯片的温度，从而根据其监测温度实时控制芯片外部散热设备以加快热量散发，以保证芯片的正常运行。传统的芯片温度测量通常是在封装之外进行(如图1所示)，例如将温度测量元件安装在贴合于封装外壳上的散热设备内部或将温度测量元件直接贴装在封装外壳表面，或者将温度测量元件安装在倒装芯片的承载电路板上。
在实现本发明的过程中，发明人发现现有技术中至少存在如下技术问题：芯片产生的热量主要来源于芯片中裸片的晶体管有源层，由于裸片的基底绝缘层和封装外壳都有一定的热阻，使得芯片外部的温度会低于芯片内部的裸片的晶体管有源层的实际温度，因此，将温度测量元件安装在贴合于封装外壳上的 散热设备内部或直接贴装在封装外壳表面的方式无法准确测量倒装芯片裸片的实际温度；而且将温度测量元件安装在芯片的承载电路板上的方式更是只能测量芯片周围的空气温度，测量误差更大。
综上，现有芯片温度测量方式不能准确测量倒装芯片的裸片工作时的温度。
发明内容
本发明提供一种倒装芯片的倒装封装结构及倒装芯片，其通过合理设置温度测量元件的安装位置，以实现对倒装芯片的裸片的工作时的运行温度的准确测量。
一方面，本发明提供一种倒装芯片的倒装封装结构，包括封装基板、以倒装方式焊接于所述封装基板上的裸片、封装外壳以及至少一个温度测量元件，所述至少一个温度测量元件设置在所述封装基板中的位于所述裸片下方的第一空间中，所述第一空间中除去所述至少一个温度测量元件所占用的空间以外的剩余空间填充有绝缘导热物质。
另一方面，本发明提供一种倒装芯片，所述倒装芯片包括上述倒装芯片的倒装封装结构。
本发明提供的倒装芯片的倒装封装结构及倒装芯片，包括封装基板、以倒装方式焊接于所述封装基板上的裸片、封装外壳以及至少一个温度测量元件，所述至少一个温度测量元件设置在所述封装基板中的位于所述裸片下方的第一空间中，所述第一空间中除去所述至少一个温度测量元件所占用的空间以外的剩余空间填充有绝缘导热物质。与现有技术相比，其通过将所述温度测量芯片安装在所述封装基板中的位于所述裸片下方的一个凹陷空间，使得所述温度测量器件与所述裸片之间只有一层绝缘导热层，可见，该安装方式一方面避免了基底绝缘层和塑封外壳热阻的影响另一方面避免了仅仅测量倒装芯片周围空气的温度作为所述倒装芯片的实际误差所引起的较大误差，因此，本发明设计的 用于倒装芯片的温度测量结构能够更准确地测量所述倒装芯片裸片工作时产生的实际温度。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中倒装芯片的温度测量元件的安装方式的结构示意图；
图2为本发明倒装芯片的倒装封装结构一实施例的示意图；
图3为本发明倒装芯片的倒装封装结构另一实施的结构示意图；
图4为上述实施例中晶体管有源层的电路区域和焊盘区域的结构示意图；
图5-图9为本发明倒装芯片的倒装封装结构的制作流程。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
如图2所示，本发明实施例提供一种倒装芯片的倒装封装结构，其包括封装基板10、以倒装方式焊接于所述封装基板10上的裸片11、封装外壳12以及至少一个温度测量元件13，所述至少一个温度测量元件13设置在所述封装基板10中的位于所述裸片11下方的第一空间14中，所述第一空间14中除去所述至少一个温度测量元件13所占用的空间以外的剩余空间填充有绝缘导热物质。
本发明提供的倒装芯片的倒装封装结构，包括以倒装方式焊接于封装基板 上的裸片、所述封装基板、封装外壳以及至少一个温度测量元件，所述至少一个温度测量元件设置在所述封装基板中的位于所述裸片下方的第一空间中，所述第一空间中除去所述至少一个温度测量元件所占用的空间以外的剩余空间填充有绝缘导热物质。与现有技术相比，其通过将所述温度测量芯片安装在所述封装基板中的位于所述裸片下方的一个凹陷空间，使得所述温度测量器件与所述裸片之间只有一层绝缘导热层，可见，该安装方式一方面避免了基底绝缘层和塑封外壳热阻的影响另一方面避免了仅仅测量倒装芯片周围空气的温度作为所述倒装芯片的实际误差所引起的较大误差，因此，本发明设计的用于倒装芯片的温度测量结构能够更准确地测量所述倒装芯片裸片工作时产生的实际温度。
如图3所示，本发明提供一种倒装芯片的倒装封装结构，其包括封装基板10、以倒装方式焊接于所述封装基板20上的裸片21、封装外壳22、至少一个温度测量元件23，其中，所述裸片21包括基底绝缘层211和晶体管有源层212，所述晶体管有源层212包括电路区域212-1和焊盘区域212-2(如图4所示)，所述封装基板20由多层绝缘介质层上下叠压制成，这里以4层绝缘介质层为例进行说明，所述封装基板20由4等绝缘介质层，其中，距离所述裸片21自近至远地依次为第1层绝缘介质层201、第2层绝缘介质层202、第3层绝缘介质层203、第4层绝缘介质层204，所述至少一个温度测量元件23设置在所述封装基板20中的位于所述晶体管有源层212的电路区域212-2下方的所述第一空间24中，所述第一空间24位于距离所述裸片21最近的第1层绝缘介质层201的内部，所述第一空间24中除去所述至少一个温度测量元件23所占用的空间以外的剩余空间填充有绝缘导热胶，以防止所述倒装芯片裸片与所述温度测量芯片之间的短路，这里绝缘导热胶也可以使用其他绝缘导热物质来代替。
优选地，在所述第一空间24中放置所述至少一个温度测量元件23后的剩余空间填充绝缘导热胶后，进行加热固化流程以对所述绝缘导热胶进行固化。
所述晶体管有源层212的焊盘区域212-1通过焊球25与所述封装基板20互连，具体为，所述晶体管有源层212的焊盘区域212-1通过焊球25与所述第1层绝缘层201互连，以实现所述裸片21与所述封装基板20的互连。
另外，在本发明实施例的所述倒装芯片的倒装封装结构中，各层绝缘介质层的两面可设置导体互连线27，各层绝缘介质层内部可设置导体通孔28，从而形成用于连接所述至少一个温度测量元件23与所述倒装芯片的外部引脚26的互连结构。这样，可以实现通过所述外部引脚26来驱动上述各个温度测量元件23以及从上述各个温度测量元件读取监测的温度值。
其中，上述各个温度测量芯片23的厚度小于所述第1层绝缘介质层201的厚度，且所述各个温度测量芯片23为裸片或封装后的芯片。
本发明提供的倒装芯片的倒装封装结构，与现有技术相比，其通过将所述温度测量芯片安装在所述封装基板中的位于所述裸片下方的一个凹陷空间，使得所述温度测量器件与所述裸片之间只有一层绝缘导热层，可见，该安装方式一方面避免了基底绝缘层和塑封外壳热阻的影响另一方面避免了仅仅测量倒装芯片周围空气的温度作为所述倒装芯片的实际误差所引起的较大误差，因此，本发明设计的用于倒装芯片的温度测量结构能够更准确地测量所述倒装芯片裸片工作时产生的实际温度。
如图5-图9所示，为上述实施例中的倒装芯片的倒装封装结构的制作流程，具体制作流程如下：
S1、在所述封装基板20中设置所述至少一个温度测量元件23(如图5所示)。
S2、将所述裸片21倒装焊接于所述封装基板上，从而形成用于容纳所述至 少一个温度测量元件23的第一空间24(如图6所示)。
S3、在所述第一空间24中除去所述至少一个温度测量元件23所占用的空间以外的剩余空间填充绝缘导热胶，并且所述绝缘导热胶注入所述剩余空间后进行加热固化流程(如图7所示)。
S4、在所述封装基板20的上部制作所述封装外壳22(如图8所示)。
S5、在所述封装基板20的下部制作所述外部引脚26(如图9所示)。
另外，本发明还提供一种倒装芯片，所述倒装芯片包括上述倒装芯片的倒装封装结构。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (8)

  1. 一种倒装芯片的倒装封装结构，包括封装基板、以倒装方式焊接于所述封装基板上的裸片、封装外壳以及至少一个温度测量元件，其特征在于，所述至少一个温度测量元件设置在所述封装基板中的位于所述裸片下方的第一空间中，所述第一空间中除去所述至少一个温度测量元件所占用的空间以外的剩余空间填充有绝缘导热物质。
  2. 根据权利要求1所述的倒装芯片的倒装封装结构，其特征在于，还包括用于连接所述至少一个温度测量元件与所述倒装芯片的外部引脚的互连结构。
  3. 根据权利要求1所述的倒装芯片的倒装封装结构，其特征在于，所述裸片包括基底绝缘层和晶体管有源层，所述晶体管有源层包括电路区域和焊盘区域，所述至少一个温度测量元件设置在所述封装基板中的位于所述晶体管有源层的电路区域下方的所述第一空间中，所述晶体管有源层的焊盘区域通过焊球与所述封装基板互连，以实现所述裸片与所述封装基板的互连。
  4. 根据权利要求3所述的倒装芯片的倒装封装结构，其特征在于，所述封装基板由多层绝缘介质层上下叠压制成，所述第一空间位于距离所述裸片最近的第1层绝缘介质层的内部，所述晶体管有源层的焊盘区域通过所述焊球与所述第1层绝缘层互连，以实现所述裸片与所述封装基板的互连。
  5. 根据权利要求4所述的倒装芯片的倒装封装结构，其特征在于，所述多层绝缘介质层的两面设置有导体互连线，所述多层绝缘介质层内部设置有导体通孔，以形成用于连接所述至少一个温度测量芯片与所述倒装芯片外部引脚的互连结构。
  6. 根据权利要求1至5任一项所述的倒装芯片的倒装封装结构，其特征在于，所述温度测量元件的厚度小于所述第1层绝缘介质层的厚度。
  7. 根据权利要求1至5任一项所述的倒装芯片的倒装封装结构，其特征在于，所述温度测量元件为裸片或封装后的芯片。
  8. 一种倒装芯片，其特征在于，所述倒装芯片具有权利要求1至7任一项所述的倒装芯片的倒装封装结构。
PCT/CN2016/070263 2015-11-25 2016-01-06 一种倒装芯片的倒装封装结构及倒装芯片 WO2017088286A1 (zh)

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