WO2017034213A1 - Anneau de nettoyage au plasma pour le nettoyage in situ, appareil de traitement au plasma comprenant un anneau au plasma, système de traitement au plasma comprenant l'anneau de nettoyage au plasma et procédé de traitement au plasma utilisant l'anneau de nettoyage au plasma - Google Patents

Anneau de nettoyage au plasma pour le nettoyage in situ, appareil de traitement au plasma comprenant un anneau au plasma, système de traitement au plasma comprenant l'anneau de nettoyage au plasma et procédé de traitement au plasma utilisant l'anneau de nettoyage au plasma Download PDF

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Publication number
WO2017034213A1
WO2017034213A1 PCT/KR2016/009074 KR2016009074W WO2017034213A1 WO 2017034213 A1 WO2017034213 A1 WO 2017034213A1 KR 2016009074 W KR2016009074 W KR 2016009074W WO 2017034213 A1 WO2017034213 A1 WO 2017034213A1
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WO
WIPO (PCT)
Prior art keywords
plasma
cleaning ring
plasma cleaning
chamber
insulating member
Prior art date
Application number
PCT/KR2016/009074
Other languages
English (en)
Inventor
Dai Kyu Choi
Original Assignee
Np Holidings Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150120328A external-priority patent/KR102384273B1/ko
Priority claimed from KR1020150120338A external-priority patent/KR102418621B1/ko
Application filed by Np Holidings Co., Ltd. filed Critical Np Holidings Co., Ltd.
Publication of WO2017034213A1 publication Critical patent/WO2017034213A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • the present invention relates to a plasma processing apparatus, and more specifically, to a plasma cleaning ring for an in-situ cleaning capable of securing a deposition uniformity in a processing process and reducing the amount of supplied gas in a cleaning process, a plasma processing apparatus having a chamber including the plasma cleaning ring, a plasma processing system including the plasma cleaning ring and a plasma processing method using the plasma cleaning ring.
  • CVD is a method to deposit an oxide film, which generally includes LPCVD(Low Pressure Chemical Vapor Deposition), PECVD(Plasma Enhanced Chemical Vapor Deposition) and so on.
  • LPCVD Low Pressure Chemical Vapor Deposition
  • PECVD Pasma Enhanced Chemical Vapor Deposition
  • LTO Low Pressure Oxide
  • the process is performed in a relatively low temperature and its deposition rate is not high.
  • the process is normally used when it is needed to form an oxide film at a low temperature in a semiconductor process or a similar semiconductor process.
  • this process has a defect that it is not easy to get a high yield. Accordingly, there have been considered many methods to get a high yield while stocking films at a low process temperature, and one of them is PECVD process.
  • a reactive gas is decomposed into ions and radicals using plasma, and the decomposed radicals are absorbed on the surface of a substrate and then move to the most stable places so that a film is formed by new couples.
  • a chemical activation of the reactive gas increases through the plasma so that the film is formed by a chemical reaction at a low temperature. Since the oxide film deposited in the PECVD process uses a low pressure plasma, it may be possible to deposit at a much lower temperature. Further, the deposition rate becomes very high so that it may be possible to form an oxide film having the thickness of several ⁇ m.
  • a focus ring is used, which is mounted in a chamber to enhance a deposition uniformity.
  • the focus ring serves to protect a wafer or a photomask while concentrating plasma to them.
  • Such a focus ring is fixedly mounted and it is not basically possible to control the amount of plasma in the chamber, so that there was a limitation on enhancement of a deposition uniformity.
  • a semiconductor device manufacturing process is generally performed in a process chamber having a specific condition formed therein.
  • reactive residual products occur in plasma etching and plasma CVD(PECVD) processes and they react with gases or photoresists used, to produce polymers.
  • Such reactive residual products occurred in the plasma process adhere to wafer surfaces or internal walls of the process chamber, leading to changes of process parameters and particle generation. They may become a defect factor of the wafer occurred while performing a semiconductor manufacturing process, resulting in a yield deterioration.
  • an objective of the present invention is to provide a plasma processing apparatus having a chamber including a plasma cleaning ring capable of enhancing a deposition uniformity in a plasma process to provide a more enhanced plasma processing system, a plasma processing system including the plasma cleaning ring and a plasma processing method using the plasma cleaning ring.
  • Another objective of the present invention is to provide a plasma processing apparatus having a chamber including a plasma cleaning ring capable of reducing the amount of cleaning gases supplied when cleaning a chamber, a plasma processing system including the plasma cleaning ring and a plasma processing method using the plasma cleaning ring.
  • a plasma cleaning ring for an in-situ cleaning
  • a plasma processing apparatus having a chamber including a plasma cleaning ring, a plasma processing system including the plasma cleaning ring, and a plasma processing method using the plasma cleaning ring.
  • a plasma cleaning ring for an in-situ cleaning includes a ring-shaped plasma cleaning ring electrode configured to have a plurality of exhaust ports; a first insulating member configured to have a plurality of exhaust ports and to enclose the plasma cleaning ring electrode in a state being contact with one side of the electrode; and a second insulating member configured to have a plurality of exhaust ports and to enclose the plasma cleaning ring electrode in a state being contact with the other side of the electrode .
  • the first insulating member may include a groove along an outer circumference surface thereof .
  • the plasma cleaning ring electrode and the second insulating member may be inserted into the groove of the first insulating member .
  • the plasma cleaning ring electrode may further include a connector led out to receive power from a power supply .
  • a plasma processing system including a chamber including a plasma cleaning ring, including: a chamber configured as described above; a remote plasma generator configured to supply the chamber with a reactive gas; and a system controller configured to control a plasma source in the chamber so as to proceed a plasma process, or to control the remote plasma generator so as to supply the chamber with the reactive gas and proceed a cleaning .
  • a plasma system processing method comprising a chamber including a plasma cleaning ring, including: supplying a process gas or a cleaning gas into the chamber; applying power to a plasma source in the chamber when the process gas is supplied so as to proceed the plasma process; and applying power to a plasma cleaning ring electrode when the cleaning gas is supplied so as to generate plasma and proceed the cleaning process .
  • a plasma cleaning ring for an in-situ cleaning a plasma processing apparatus having a chamber including the plasma cleaning ring, a plasma processing system including the plasma cleaning ring and a plasma processing method using the plasma cleaning ring in accordance with the present invention, it may be possible to move a susceptor vertically in a processing process, and trap plasma in an effective area in a process chamber to secure a deposition uniformity.
  • an RF power is applied, for example, to cause cleaning gases to be decomposed, resultantly reducing the amount of cleaning gases supplied.
  • Fig. 1 is a view illustrating a configuration of a plasma cleaning ring in accordance with a first embodiment of the present invention.
  • Fig. 2 is a view illustrating a configuration of a plasma cleaning ring in accordance with a first embodiment of the present invention.
  • Fig. 3 illustrates sectional views of plasma cleaning rings in accordance with various modified examples of the present invention.
  • Fig. 4 is a view illustrating a configuration of a plasma cleaning ring in accordance with a second embodiment of the present invention.
  • Fig. 5 illustrates various modified examples of an exhaust port of a plasma cleaning ring of the present invention.
  • Fig. 6 is a view illustrating a configuration where a plasma cleaning ring in accordance with a first embodiment of the present invention is applied to a plasma processing system.
  • Fig. 7 is a view illustrating a plasma processing system in accordance with a second embodiment of the present invention.
  • Fig. 8 is a flow chart sequentially illustrating an operation method of a plasma processing system in accordance with a first embodiment of the present invention.
  • Fig. 9 is a flow chart sequentially illustrating a processing process.
  • Fig. 10 is a flow chart sequentially illustrating a cleaning process.
  • Fig. 11 is a view illustrating a characteristic curve of a reactive gas shown according to the present invention.
  • Fig. 12 is a view illustrating a method for applying power to a plasma cleaning ring of the present invention.
  • Fig. 13 is a view illustrating a method for applying power to a plasma cleaning ring of the present invention.
  • Fig. 14 is a graph showing a plasma density distribution according to a process of the present invention.
  • Figs. 1 and 2 are views illustrating a configuration of a plasma cleaning ring in accordance with a first embodiment of the present invention.
  • a plasma cleaning ring 10 of the present invention comprises a first insulating member 12, a plasma cleaning ring electrode 14 and a second insulating member 16.
  • the first insulating member 12 has a plurality of elliptical exhaust ports 11, for example, each being wider in the horizontal direction than in the vertical direction.
  • the exhaust port 11 is not limited thereto but may be variously changed in its shape.
  • the first insulating member 12 has a groove having a desired width into which the plasma cleaning ring electrode 14 and the second insulating member 16 may be inserted.
  • the plasma cleaning ring electrode 14 includes a plurality of elliptical exhaust ports 15, for example, each having the same size as the exhaust port 11 of the first insulating member 12 and being wider in the horizontal direction than in the vertical direction.
  • the second insulating member 16 also has a plurality of exhaust ports 17, each having the same size and shape as the exhaust ports 11 and 15 of the first insulating member 12 and the plasma cleaning ring electrode 14. Accordingly, the plasma cleaning ring electrode 14 is enclosed and sealed by the first and second insulating members 12 and 16 to insulate the plasma cleaning ring electrode electrically, thereby preventing the electrode from being exposed to plasma.
  • the plasma cleaning ring electrode 14 may be a flat metallic electrode, or may be configured in a band type by winding a flexible chopper foil around the first insulating member 12, for example.
  • the plasma cleaning ring electrode 14 may be applied to a plasma processing system, so that it may trap plasma in an effective area of a process chamber to secure a deposition uniformity in a processing process, and receive an RF power to assist decomposition of cleaning gases, resultantly reducing the amount of cleaning gases supplied, for example.
  • Fig. 6 A more detailed description of it will be given below with reference to Fig. 6.
  • Fig. 3 illustrates sectional views of plasma cleaning rings in accordance with various modified examples of the present invention.
  • the plasma cleaning ring in accordance with various modified examples of the present invention is formed in such a manner that a first insulating member 12, a plasma cleaning ring electrode 14 and a second insulating member 16 have the same exhaust ports 11 with one another, as shown in Fig. 3(a).
  • a plasma cleaning ring in accordance with another modified example of the present invention is formed in such a manner that a first insulating member 12a encloses three surfaces of the plasma cleaning ring electrode 14a except the surface of it contacting with an exhaust port 15a and the exhaust port 15a of the plasma cleaning ring electrode 14a is larger than an exhaust port 11a of the first insulating member 12a in size. Accordingly, when plasma is exhausted through the exhaust ports 11a and 15a, the plasma cleaning ring electrode 14a may be exposed to plasma in a smaller scale.
  • a plasma cleaning ring in accordance with yet another modified example of the present invention is configured in such a manner that the plasma cleaning ring electrode 14b is completely sealed by coupling first and second insulating members 12b and 16b each other whose sectional shapes are " ⁇ " and " ⁇ ", respectively. Accordingly, when plasma is exhausted through the exhaust port 11b, the plasma cleaning ring electrode 14b is prevented from being exposed to plasma.
  • Fig. 4 is a view illustrating a configuration of a plasma cleaning ring in accordance with a second embodiment of the present invention.
  • a plasma cleaning ring in accordance with a second embodiment of the present invention has a configuration to which an ICP type plasma source is applied.
  • a plasma cleaning ring in accordance with a first embodiment of the present invention is applied with a CCP type plasma source to operate as an electrode
  • a plasma cleaning ring in accordance with a second embodiment of the present invention has a coil 18 inserted into the place where the plasma cleaning ring electrode is arranged, so as to operate as an ICP type antenna.
  • the coil 18 is formed to have a through type structure so that a cooling may be simultaneously performed by injecting a cooling water into the coil.
  • Fig. 5 illustrates various modified examples of an exhaust port of a plasma cleaning ring of the present invention.
  • an exhaust port of the plasma cleaning ring in accordance with the present invention controls the size of an exhaust hole by rotating first and second insulating members or a plasma cleaning ring electrode relatively with one another and regulating the level of crossing, for example, as illustrated in Fig. 5(a).
  • the amount of discharged gas may be controlled by crossing an exhaust port 11-1 of the first insulating member and an exhaust port 15-1 of the plasma cleaning ring electrode to regulate the hole size with the level of their crossing.
  • the first and second insulating members or plasma cleaning ring electrode may be rotated manually or automatically using a motor.
  • an exhaust port 11-2 of the first insulating member and an exhaust port 15-2 of the plasma cleaning ring electrode have a shape of a right-angled triangle. With such a shape, a hole position of the first insulating member formed while covering the exhaust port 15-2 of the plasma cleaning ring moves upward so that the exhaust port may be controlled up and down to change the direction of gas flow, thereby securing a deposition uniformity, too.
  • an exhaust port 11-3 of the first insulating member and an exhaust port 15-3 of the plasma cleaning ring electrode have a shape of a rectangle, and the amount of discharged gas may be controlled by rotating the first insulating member or the plasma cleaning ring electrode to regulate the hole size with the level of their crossing.
  • the shape of the exhaust port is not limited thereto but may be modified in various shapes.
  • Fig. 6 is a view illustrating a configuration where a plasma cleaning ring in accordance with a first embodiment of the present invention is applied to a plasma processing system.
  • a plasma processing system 100 to which the plasma cleaning ring in accordance with the first embodiment of the present invention is applied is comprised of a power supply module 20, a first switching circuit 26, a remote plasma generator 30, a cleaning gas supply 40, a process gas supply 50, a system controller 60, a plasma cleaning ring 10, and a process chamber 70.
  • the power supply module 20 includes a first power supply 22 and a matching network 24, which performs an impedance matching of an RF power generated from the first power supply 22, for example, through the matching network 24 to supply it to an upper electrode of the process chamber 70, that is, a shower head 74.
  • the first switching circuit 26 applies power to the upper electrode of the process chamber 70, that is, the shower head 74 in a processing process, and is switched to apply power to the plasma cleaning ring 10 in a cleaning process.
  • the plasma cleaning ring 10 may be applied with power from the remote plasma generator 30.
  • the remote plasma generator 30 is supplied with a cleaning gas from the cleaning gas supply 40 in the cleaning process to generate plasma and inject it to the process chamber 70.
  • the system controller 60 controls operations of the power supply module 20, the first switching circuit 26, the remote plasma generator 30, the cleaning gas supply 40 and the process gas supply 50.
  • the process chamber 70 comprises the plasma cleaning ring 10, the shower head 74, a susceptor 78, an exhaust channel 77 and a lift pin 73.
  • An lead cable 88 is drawn out of the plasma cleaning ring electrode 26 so that a connector is connected, and a first switch circuit 26 is connected to the connector so that the plasma cleaning ring 10 is applied with power in the cleaning process.
  • the lead cable 88 is a conductor, which includes an insulating layer around it.
  • the plasma cleaning ring 10 may trap plasma in an effective area of the process chamber to secure a deposition uniformity in the processing process. Further, in the cleaning process, the plasma cleaning ring 10 is applied with an RF power, for example, to clean the inner part of the shower head 74 using the plasma source provided from the remote plasma generator 30 and then decompose resultant synthetic ions so as to provide it as a plasma source to clean an internal chamber, resultantly reducing the amount of cleaning gases supplied. Further, the plasma cleaning ring 10 has exhaust channels 77 formed on its both sides to discharge cleaned gases through the exhaust port 11 and the exhaust pump 84.
  • the shower head 74 is applied with power to operate as an upper electrode.
  • the susceptor 78 may move up and down using a moving bar 71 so that it may place a substrate 76 closer to the shower head 74, thereby enhancing a deposition uniformity.
  • the lift pin 73 is provided with a substrate from a transporter(not shown) to lay it down on the susceptor 78.
  • the plasma processing system 100 of the present invention may perform both processing and cleaning processes, wherein it may be possible to secure a deposition uniformity in the processing process and to reduce the amount of cleaning gases supplied in the cleaning process.
  • Fig. 7 is a view illustrating a plasma processing system in accordance with a second embodiment of the present invention.
  • a plasma processing system in accordance with a second embodiment of the present invention may process two substrates at a time using two process chambers 70 and 70c and clean two process chambers 70 and 70c at a time.
  • a first switching circuit 26 is connected to each of connectors 86 and 86c and each of shower heads 74 and 74c.
  • a remote plasma generator 30 supplies each of the process chambers 70 and 70c with a cleaning plasma.
  • the process gas supply 50 supplies each of the process chambers 70 and 70c with process gases.
  • Fig. 8 is a flow chart sequentially illustrating an operation method of a plasma processing system in accordance with a first embodiment of the present invention.
  • PROCESSING OR CLEANING(S100) is a step of selecting a PROCESSING process or a CLEANING process.
  • the step proceeds to a PROCESSING PROCESS (S110) to perform the processing process
  • the step proceeds to the CLEANING PROCESS (S120) to perform the cleaning process.
  • CONTINUOUS PROCESS (S130) is a step of selecting whether to continue the processing process or cleaning process when the processing process or cleaning process has been completed. A more detailed description on the processing process and cleaning process will be given below with reference to Figs. 9 and 10.
  • Fig. 9 is a flow chart sequentially illustrating a processing process.
  • SUPPLY PROCESS GAS is a step of supplying a process chamber with process gases from a process gas supply.
  • SWITCH TO UPPER ELECTRODE TERMINAL (S112) is a step that a first switching circuit is switched to an upper electrode terminal, that is, a shower head.
  • APPLY POWER TO UPPER ELECTRODE(S113) is a step of applying the upper head with power through a first switching circuit.
  • PROCEED PLASMA PROCESSING PROCESS(S114) is a step of proceed a process such as deposition or etching by a plasma process using the plasma generated.
  • Fig. 10 is a flow chart sequentially illustrating a cleaning process.
  • SUPPLY CLEANING GAS(S121) is a step of providing a remote plasma generator with cleaning gases from a cleaning gas supply.
  • RPG ON(S122) is a step of turning on the remote plasma generator through a system controller to generate a remote plasma.
  • SWITCH TO PLASMA CLEANING RING ELECTRODE(S123) is a step that the first switching circuit switches to a connector and resultantly to a plasma cleaning ring electrode.
  • APPLY POWER TO PLASMA CLEANING RING(S124) is a step of applying power to the plasma cleaning ring electrode through a first switching circuit.
  • CLEAN CHAMBER (S125) is a step of cleaning a process chamber using the remote plasma supplied and the plasma decomposed by the plasma cleaning ring.
  • Fig. 11 is a view illustrating a characteristic curve of a reactive gas shown according to the present invention.
  • a conventional gas supply curve 1-1 indicates that the same amount of gas is supplied to the EPD(EndPoint Detection) in a cleaning process.
  • a reactive gas characteristic curve 1-2 indicates that the amount of reactive gas increases for a predetermined time at an early stage, keeps for a while and then decreases while finishing the cleaning.
  • a reactive gas characteristic curve 2-2 that is improved according to the present invention indicates that materials such as F - are produced by a decomposition to generate reactive gases such as SiH 4 from a residual product SiO 2 so that more reactive gases generate than in the conventional reactive gases.
  • the decomposed plasma couples with much more residual products to generate reactive gases in the cleaning process, it may be possible to reduce the amount of gases supplied and to show the improved gas supply curve 2-1. Further, due to the decomposition, it may also be possible to reduce a cleaning time and then to reduce EPD, too.
  • Figs. 12 and 13 are views illustrating a method for applying power to a plasma cleaning ring of the present invention.
  • a second power supply 34 supplies a primary winding 36 of a remote plasma generator 30 with power, and the primary winding 36, after winding both coils 38 of the discharge tube 35, turns on a second switching circuit 28 to provide a plasma cleaning ring electrode 14 with power through the connector 86 in a cleaning process.
  • a first tap to a third tap are formed according to the winding number, and a selective switching is made to them to select the intensity of power applied.
  • power supplied from the second power supply 34 of a remote plasma generator that is turned on in the cleaning process without any separate power supply may be applied to the plasma cleaning ring electrode 14 so as to control the intensity of the power supply.
  • Fig. 14 is a graph showing a plasma density distribution according to a process of the present invention.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Le substrat peut être sélectivement transféré par un procédé sous vide ou de préhension de bord selon les caractéristiques du procédé, à l'aide d'un seul robot de transfert de substrat disposé dans le module d'extrémité avant. En outre, après le procédé, le substrat peut être chargé à l'aide de la chambre tampon, pour le procédé de refroidissement et le transfert du substrat.
PCT/KR2016/009074 2015-08-26 2016-08-18 Anneau de nettoyage au plasma pour le nettoyage in situ, appareil de traitement au plasma comprenant un anneau au plasma, système de traitement au plasma comprenant l'anneau de nettoyage au plasma et procédé de traitement au plasma utilisant l'anneau de nettoyage au plasma WO2017034213A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020150120328A KR102384273B1 (ko) 2015-08-26 2015-08-26 인시츄 클리닝이 가능한 플라즈마 클리닝링
KR10-2015-0120328 2015-08-26
KR1020150120338A KR102418621B1 (ko) 2015-08-26 2015-08-26 플라즈마 클리닝링을 구비한 플라즈마 처리장치, 이를 포함한 플라즈마 처리 시스템 및 이를 이용한 처리방법
KR10-2015-0120338 2015-08-26

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WO2017034213A1 true WO2017034213A1 (fr) 2017-03-02

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PCT/KR2016/009074 WO2017034213A1 (fr) 2015-08-26 2016-08-18 Anneau de nettoyage au plasma pour le nettoyage in situ, appareil de traitement au plasma comprenant un anneau au plasma, système de traitement au plasma comprenant l'anneau de nettoyage au plasma et procédé de traitement au plasma utilisant l'anneau de nettoyage au plasma

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US20070128876A1 (en) * 2005-12-02 2007-06-07 Noriaki Fukiage Chamber dry cleaning
KR20070070752A (ko) * 2005-12-29 2007-07-04 삼성전자주식회사 반도체 소자 제조 장치 및 상기 장치의 챔버를 클리닝하는방법
US7320331B1 (en) * 2003-09-30 2008-01-22 United States Of America As Represented By The Secrertary Of The Army In-situ plasma cleaning device for cylindrical surfaces
JP2009099858A (ja) * 2007-10-18 2009-05-07 Tokyo Electron Ltd プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US7320331B1 (en) * 2003-09-30 2008-01-22 United States Of America As Represented By The Secrertary Of The Army In-situ plasma cleaning device for cylindrical surfaces
US20070128876A1 (en) * 2005-12-02 2007-06-07 Noriaki Fukiage Chamber dry cleaning
KR20070070752A (ko) * 2005-12-29 2007-07-04 삼성전자주식회사 반도체 소자 제조 장치 및 상기 장치의 챔버를 클리닝하는방법
JP2009099858A (ja) * 2007-10-18 2009-05-07 Tokyo Electron Ltd プラズマ処理装置

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