WO2017020366A1 - 有机发光二极管 - Google Patents

有机发光二极管 Download PDF

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Publication number
WO2017020366A1
WO2017020366A1 PCT/CN2015/087928 CN2015087928W WO2017020366A1 WO 2017020366 A1 WO2017020366 A1 WO 2017020366A1 CN 2015087928 W CN2015087928 W CN 2015087928W WO 2017020366 A1 WO2017020366 A1 WO 2017020366A1
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Prior art keywords
layer
light emitting
electrode
oled
emitting layer
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French (fr)
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/778,289 priority Critical patent/US9780324B2/en
Publication of WO2017020366A1 publication Critical patent/WO2017020366A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • Embodiments of the invention relate to an organic light emitting diode.
  • it relates to an organic light emitting diode capable of regulating the current of an organic layer.
  • an organic light emitting diode includes a cathode, an anode, and a light emitting layer.
  • Figure 1 shows a cross-sectional view of an OLED according to the prior art.
  • the OLED 100 includes an anode 110, a hole injection layer 120, a light-emitting layer 130, an electron injection layer 140, and a cathode 150.
  • the cathode is generally made of a metal material such as Al
  • the anode is made of a material such as ITO.
  • the principle of operation of the OLED 100 having such a structure is as follows.
  • the transparent anode ITO is mainly used, that is, the OLED structure exhibits a top emission state, and in the production process, in order to avoid damage to the organic material when the ITO is vapor-deposited, it is often placed at the bottom, thereby adopting the bottom.
  • the structure of Bottom emission that is, light is emitted from the cathode.
  • FIG. 2 shows a driving circuit diagram of a 2T1C OLED pixel according to the prior art.
  • the capacitor C is charged by turning on the TFT T1 for keeping the TFT T2 connected to the data voltage VDD turned on to drive the OLED to emit light, which is a constant current source structure.
  • the threshold voltage of the TFT T2 is shifted in characteristics, and the threshold voltage of the TFT T2 is inconsistent due to the instability of the process, resulting in uneven in-plane luminance of the entire system constituted by such pixels.
  • the input signal is amplified by the addition of an operational amplifier, so that the voltage of the TFT T2 becomes insensitive to the influence of the input signal to compensate for the spatial unevenness and instability of the TFT.
  • the present invention provides an improved organic light emitting diode.
  • an organic light emitting diode includes: a first electrode; a second electrode disposed on the first electrode; and a light emitting layer disposed between the first electrode and the second electrode a conductive layer, located in the luminescent layer or in direct contact with the luminescent layer.
  • the conductive layer may comprise Al.
  • the conductive layer may have a thickness of 10 nm to 100 nm.
  • the first electrode may be an anode and the second electrode may be a cathode.
  • the organic light emitting diode may further include: a hole injection layer disposed between the first electrode and the light emitting layer, wherein the conductive layer is located between the light emitting layer and the hole injection layer.
  • the organic light emitting diode may further include: an electron injection layer disposed between the second electrode and the light emitting layer, wherein the conductive layer is located between the light emitting layer and the electron injecting layer.
  • the organic light emitting diode may further include:
  • a hole injection layer disposed between the first electrode and the light emitting layer
  • An electron injection layer disposed between the second electrode and the light emitting layer
  • the conductive layer is located between the light emitting layer and the hole injection layer and/or between the light emitting layer and the electron injecting layer.
  • the organic light emitting diode may further include:
  • a hole injection layer disposed between the first electrode and the light emitting layer
  • a hole transport layer disposed between the hole injection layer and the light emitting layer
  • An electron injection layer disposed between the second electrode and the light emitting layer
  • An electron transport layer disposed between the electron injecting layer and the light emitting layer
  • the conductive layer is located between the light-emitting layer and the hole transport layer and/or between the light-emitting layer and the electron transport layer.
  • the organic light emitting diode of the present invention by adding a conductive layer in the OLED, the inside of the OLED can be adjusted and balanced by an external voltage, and is no longer limited to the circuit input between the two electrodes, thereby being capable of regulating the luminance of the OLED.
  • vapor deposition of the conductive layer does not damage the light-emitting layer, so that an OLED device exhibiting a top emission state can be utilized.
  • Figure 1 shows a cross-sectional view of an OLED according to the prior art
  • FIG. 2 shows a driving circuit diagram of a 2T1C OLED pixel according to the prior art
  • Figure 3 shows a cross-sectional view of an OLED in accordance with an embodiment of the present invention
  • FIG. 4 shows a cross-sectional view of an OLED in accordance with another embodiment of the present invention.
  • Figure 5 shows a cross-sectional view of an OLED in accordance with another embodiment of the present invention.
  • 6A and 6B show equivalent circuit diagrams of the OLEDs of FIGS. 3 and 4, respectively;
  • FIG. 7 shows a circuit diagram of an equivalent capacitance structure of the OLED of FIG.
  • FIG. 3 shows a cross-sectional view of an OLED in accordance with an embodiment of the present invention.
  • an OLED 200 according to an embodiment of the present invention includes a first electrode 210, a second electrode 230, a conductive layer 221, and a light emitting layer 222.
  • the first electrode 210 may be an anode, and the second electrode 230 may be a cathode, but the invention is not limited thereto, the first electrode 210 may be a cathode, and the second electrode 230 may be an anode. Unless otherwise stated, the case where the first electrode is an anode and the second electrode is a cathode will be described below.
  • the first electrode 210 may be formed of a material such as ITO, and the second electrode 230 may be formed of a metal material such as Al, however, the materials of the first electrode and the second electrode are not limited thereto.
  • the light emitting layer 222 is located between the first electrode 210 and the second electrode 220.
  • the light emitting layer 222 may be made of a material such as Alq 3 .
  • the conductive layer 221 is located in the light emitting layer 222.
  • the conductive layer 221 may be formed of a material having excellent conductivity, for example, Al, Mg, Ag, or the like. Further, the thickness of the conductive layer 221 may be 10 nm to 100 nm, however, the present invention is not limited thereto as long as light can be transmitted.
  • the OLED 100 is adjusted from the ITO/Alq 3 /Al structure to the ITO/Alq 3 /Al/Alq 3 /Al structure, and the current of the light-emitting layer can be regulated. Thereby, the brightness of the OLED 100 is better adjusted.
  • vapor deposition of the conductive layer does not damage the light-emitting layer, so that an OLED device exhibiting a top emission state can be utilized.
  • the OLED according to an embodiment of the present invention may further include various functional layers such as at least one of a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer.
  • a functional layer In the presence of such a functional layer, the conductive layer directly contacts the luminescent layer.
  • An embodiment in which the conductive layer directly contacts the light-emitting layer will be described in detail below with reference to FIGS. 4 and 5.
  • FIG. 4 shows a cross-sectional view of an OLED in accordance with another embodiment of the present invention.
  • FIG. 5 shows a cross-sectional view of an OLED in accordance with another embodiment of the present invention.
  • an OLED 300 includes a first electrode 310, a second electrode 330, a conductive layer 321, a light emitting layer 322, and a hole injection layer 323.
  • the first electrode 310, the second electrode 330, and the light-emitting layer 322 are the same as those described with reference to FIG. 3, and thus will not be described herein.
  • the hole injection layer 323 is located between the first electrode 310 and the light emitting layer 322.
  • the hole injection layer 323 can be made of a material known to those skilled in the art.
  • the conductive layer 321 is located between the light emitting layer 322 and the hole injection layer 323.
  • the conductive layer 321 may be formed of a material having excellent conductivity, for example, Al, Mg, Ag, or the like, however, the present invention is not limited thereto as long as the work function of the conductive layer can match the functional layer in contact therewith and does not affect the hole/ Any suitable material through which electrons pass.
  • an OLED according to an embodiment of the present invention may include a first electrode, a second electrode, a conductive layer, a light emitting layer, and an electron injection layer.
  • the electron injecting layer is located between the second electrode and the light emitting layer
  • the conductive layer is located between the electron injecting layer and the light emitting layer.
  • an OLED 300 includes a first electrode 310, a second electrode 330, a conductive layer 321, a light emitting layer 322, a hole injection layer 323, and an electron injection layer 324.
  • the first electrode 310, the second electrode 330, the light-emitting layer 322, and the hole injection layer 323 are the same as those described with reference to FIG. 4, and thus will not be described herein.
  • the electron injection layer 324 is located between the second electrode 330 and the light emitting layer 322.
  • the electron injection layer 324 can be made of materials well known to those skilled in the art.
  • the conductive layer 321 is located between the hole injection layer 323 and the light emitting layer 322 and between the electron injection layer 324 and the light emitting layer 322.
  • the present invention is not limited thereto.
  • the conductive layer 321 may be located only between the hole injection layer 323 and the light emitting layer 322 or only between the electron injection layer 324 and the light emitting layer 322.
  • the conductive layer 321 may be made of the same material as that of the conductive layer described with reference to FIG.
  • the OLED of the embodiment of the present invention may include a first electrode, a hole injection, which are sequentially disposed a layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer, wherein the conductive layer is located between the hole transport layer and the light emitting layer and/or between the electron transport layer and the light emitting layer.
  • the conductive layer in direct contact with the light-emitting layer, it is possible to regulate the current of the light-emitting layer, thereby better adjusting the light-emitting luminance of the OLED.
  • vapor deposition of the conductive layer does not damage the light-emitting layer, so that an OLED device exhibiting a top emission state can be utilized.
  • FIGS. 6A and 6B show equivalent circuit diagrams of the OLEDs of Figs. 3 and 4, respectively, and Fig. 7 shows a circuit diagram of an equivalent capacitance structure of the OLED of Fig. 4.
  • a conductive layer 221 is disposed in the light-emitting layer 222, and the light-emitting layer 222 divided into two portions by the light-emitting layer 221 can be regarded as two resistors, and is used between the two resistors.
  • the modulated electric field is V- modulated so that the current of the light-emitting layer 222 can be regulated, which in turn regulates the luminance of the OLED.
  • a conductive layer 321 is disposed between the light emitting layer 322 and the hole injection layer 323 according to an embodiment of the present invention, and the light emitting layer 322 and the hole injection layer 323 may be regarded as two resistors, and There is an electric field V modulation for modulation between the two resistors, so that the current of the light-emitting layer 322 can be regulated, which in turn regulates the luminance of the OLED.
  • the OLED according to an embodiment of the present invention corresponds to a circuit diagram of the capacitor structure shown in FIG. 7 in consideration of the parasitic capacitance of the OLED itself. It can be seen that by controlling the current of the luminescent layer, the illuminating brightness of the OLED is regulated.
  • the present invention can regulate the current of the luminescent layer of the OLED by disposing the conductive layer in the luminescent layer or directly contacting the conductive layer with the luminescent layer, thereby regulating the illuminating brightness of the OLED.
  • vapor deposition of the conductive layer does not damage the light-emitting layer, so that an OLED device exhibiting a top emission state can be utilized.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供了一种有机发光二极管，有机发光二极管包括：第一电极（210）；第二电极（230），设置在第一电极（210）上；发光层（222），设置在第一电极（210）和第二电极（230）之间；导电层（221），位于发光层（222）中或者直接接触发光层（222）。根据本发明的有机发光二极管，通过在OLED中加入导电层（221），使得在OLED内部可以被外部电压调节和平衡，而不再局限于两个电极之间的电路输入，从而能够调控OLED的发光亮度。另外，导电层（221）的蒸镀不会损坏发光层（222），从而能够利用呈现顶发射状态的OLED器件。

Description

有机发光二极管 技术领域
本发明的实施例涉及一种有机发光二极管。具体地讲，涉及一种能够调控有机层的电流的有机发光二极管。
背景技术
通常，有机发光二极管(OLED)包括阴极、阳极和发光层。图1示出了根据现有技术的OLED的剖视图。如图1所示，OLED 100包括阳极110、空穴注入层120、发光层130、电子注入层140和阴极150。阴极一般采用Al等金属材料制成，阳极采用ITO等材料制成。具有这样结构的OLED 100的操作原则如下。当将电压施加在阳极110和阴极150之间时，从阳极110注入的空穴穿过空穴注入层120并到达发光层130，从阴极150注入的电子穿过电子注入层140并到达发光层130。空穴和电子在发光层130中彼此复合并产生激子，激子从激发态变为基态，从而发光。目前多以透明阳极ITO为主，即OLED结构呈现顶发射(Top emission)的状态，而在生产过程中，为了避免蒸镀ITO时对有机材料的破坏，往往将其置于底部，从而采用底发光(Bottom emission)的结构，即光线从阴极射出。
在利用上述OLED形成2T1C OLED像素时会因TFT的驱动导致该像素的亮度不均匀。图2示出了根据现有技术的2T1C OLED像素的驱动电路图。如图2所示，通过打开TFT T1给电容器C充电，电容器用于保持与数据电压VDD连接的TFT T2打开，以驱动OLED发光，这是一种恒流源的结构。但是在驱动过程中，TFT T2的阈值电压会发生特性的偏移，同时由于制程的不稳定，使得TFT T2的阈值电压不一致，导致这样的像素构成的整个系统的面内亮度不均匀。
为了避免上述问题，开发出了3T结构的驱动电路。通过加入运算放大器放大输入信号，从而使TFT T2的电压受输入信号的影响变得不敏感，以补偿TFT的空间不均匀和不稳定性。
发明内容
为了解决上述现有技术的不足，本发明提供一种改进的有机发光二极管。
根据本发明的一方面，提供一种有机发光二极管，所述有机发光二极管包括：第一电极；第二电极，设置在第一电极上；发光层，设置在第一电极和第二电极之间；导电层，位于发光层中或者直接接触发光层。
根据本发明的实施例，所述导电层可以包括Al。
根据本发明的实施例，所述导电层的厚度可以为10nm-100nm。
根据本发明的实施例，第一电极可以为阳极，第二电极可以为阴极。
根据本发明的实施例，所述有机发光二极管还可以包括：空穴注入层，设置在第一电极和发光层之间，其中，导电层位于发光层和空穴注入层之间。
根据本发明的实施例，所述有机发光二极管还可以包括：电子注入层，设置在第二电极和发光层之间，其中，导电层位于发光层和电子注入层之间。
根据本发明的实施例，所述有机发光二极管还可以包括：
空穴注入层，设置在第一电极和发光层之间；
电子注入层，设置在第二电极和发光层之间；
其中，导电层位于发光层与空穴注入层之间和/或发光层与电子注入层之间。
根据本发明的实施例，所述有机发光二极管还可以包括：
空穴注入层，设置在第一电极和发光层之间；
空穴传输层，设置在空穴注入层和发光层之间；
电子注入层，设置在第二电极和发光层之间；
电子传输层，设置在电子注入层和发光层之间；
其中，导电层位于发光层与空穴传输层之间和/或发光层与电子传输层之间。
根据本发明的有机发光二极管，通过在OLED中加入导电层，使得在OLED内部可以被外部电压调节和平衡，而不再局限于两个电极之间的电路输入，从而能够调控OLED的发光亮度。另外，导电层的蒸镀不会损坏发光层，从而能够利用呈现顶发射状态的OLED器件。
附图说明
图1示出了根据现有技术的OLED的剖视图；
图2示出了根据现有技术的2T1C OLED像素的驱动电路图；
图3示出了根据本发明的实施例的OLED的剖视图；
图4示出了根据本发明的另一实施例的OLED的剖视图；
图5示出了根据本发明的另一实施例的OLED的剖视图；
图6A和图6B分别示出了图3和图4的OLED的等效电路图；
图7示出了图4的OLED的等效电容结构的电路图。
具体实施方式
下面将参照附图详细地描述本发明的示例性实施例。
以下将结合附图来详细描述本发明的示例性实施例，然而，附图只是示意性地示出了本发明的具体示例，且不具有限制作用。然而，本领域技术人员应理解的是，在不脱离本发明的权利要求所限定的保护范围的情况下，可以对其进行各种修改和变形。
图3示出了根据本发明的实施例的OLED的剖视图。参照图3，根据本发明的实施例的OLED 200包括第一电极210、第二电极230、导电层221和发光层222。
第一电极210可以是阳极，第二电极230可以是阴极，然而本发明不限于此，第一电极210可以是阴极，第二电极230可以是阳极。如无特别说明，下面将描述第一电极是阳极，第二电极是阴极的情况。
第一电极210可以由ITO等材料形成，第二电极230可以由Al等金属材料形成，然而，第一电极和第二电极的材料不限于此。
发光层222位于第一电极210和第二电极220之间。在本发明的实施例中，发光层222可以由Alq3等材料制成。
导电层221位于发光层222中。导电层221可以由具有优异的导电性的材料形成，例如，Al、Mg或Ag等。另外，导电层221的厚度可以为10nm-100nm，然而，本发明不限于此，只要能够使光透过即可。
根据本发明的实施例，通过在发光层222中设置导电层221，使OLED 100由ITO/Alq3/Al结构调整为ITO/Alq3/Al/Alq3/Al结构，能够调控发光层的电流，从而更好地调整OLED 100的发光亮度。另外，导电层的蒸镀不会损坏发光层，从而能够利用呈现顶发射状态的OLED器件。
根据本发明的实施例的OLED还可以包括各种功能层，例如空穴传输层、空穴注入层、电子传输层和电子注入层中的至少一种。在存在这样的功能层时，导电层直接接触发光层。下面将参照图4和图5详细描述导电层直接接触发光层的实施例。
图4示出了根据本发明的另一实施例的OLED的剖视图。图5示出了根据本发明的另一实施例的OLED的剖视图。
参照图4，根据本发明的实施例的OLED 300包括第一电极310、第二电极330、导电层321、发光层322和空穴注入层323。这里，第一电极310、第二电极330和发光层322与参照图3描述的这些层相同，因此将不在此进行赘述。
空穴注入层323位于第一电极310和发光层322之间。空穴注入层323可以由本领域技术人员所公知的材料制成。
导电层321位于发光层322和空穴注入层323之间。导电层321可以由具有优异的导电性的材料形成，例如，Al、Mg或Ag等，然而，本发明不限于此，只要导电层的功函数能够与其接触的功能层匹配且不影响空穴/电子穿过的任何适合的材料。
此外，根据本发明的实施例的OLED可以包括第一电极、第二电极、导电层、发光层和电子注入层。在这种情况下，电子注入层位于第二电极和发光层之间，并且导电层位于电子注入层和发光层之间。
参照图5，根据本发明的实施例的OLED 300包括第一电极310、第二电极330、导电层321、发光层322、空穴注入层323和电子注入层324。这里，第一电极310、第二电极330、发光层322和空穴注入层323与参照图4描述的这些层相同，因此将不在此进行赘述。
电子注入层324位于第二电极330和发光层322之间。电子注入层324可以由本领域技术人员所公知的材料制成。
导电层321位于空穴注入层323与发光层322之间和电子注入层324与发光层322之间。此外，本发明不限于此，例如导电层321可以仅位于空穴注入层323与发光层322之间或仅位于电子注入层324与发光层322之间。这里，导电层321可以由与参照图4描述的导电层的材料相同的材料制成。
此外，本发明的实施例的OLED可以包括依次设置的第一电极、空穴注入 层、空穴传输层、发光层、电子传输层和电子注入层，其中，导电层位于空穴传输层与发光层之间和/或电子传输层与发光层之间。
根据本发明的实施例，通过将导电层设置成与发光层直接接触，使得能够调控发光层的电流，从而更好地调整OLED的发光亮度。另外，导电层的蒸镀不会损坏发光层，从而能够利用呈现顶发射状态的OLED器件。
下面将参照图6A、图6B和图7描述导电层在OLED中的作用。
图6A和图6B分别示出了图3和图4的OLED的等效电路图，图7示出了图4的OLED的等效电容结构的电路图。
参照图6A，根据本发明的实施例，在发光层222中设置导电层221，可以将被发光层221分为两部分的发光层222看作两个电阻，并且在两个电阻之间存在用于调制的电场V调制，从而能够调控发光层222的电流，继而调控OLED的发光亮度。
参照图6B和图7，根据本发明的实施例，在发光层322与空穴注入层323之间设置导电层321，可以将发光层322和空穴注入层323看作两个电阻，并且在两个电阻之间存在用于调制的电场V调制，从而能够调控发光层322的电流，继而调控OLED的发光亮度。另外，考虑到OLED本身的寄生电容，根据本发明的实施例的OLED对应于图7中示出的电容结构的电路图。由此可见，通过调控发光层的电流，从而调控OLED的发光亮度。
综上所述，本发明通过将导电层设置在发光层中或者将导电层与发光层直接接触，能够调控OLED的发光层的电流，从而调控OLED的发光亮度。另外，导电层的蒸镀不会损坏发光层，从而能够利用呈现顶发射状态的OLED器件。

Claims (8)

  1. 一种有机发光二极管，其中，所述有机发光二极管包括：
    第一电极；
    第二电极，设置在第一电极上；
    发光层，设置在第一电极和第二电极之间；
    导电层，位于发光层中或者直接接触发光层。
  2. 根据权利要求1所述的有机发光二极管，其中，所述导电层包括Al。
  3. 根据权利要求1所述的有机发光二极管，其中，所述导电层的厚度为10nm-100nm。
  4. 根据权利要求1所述的有机发光二极管，其中，第一电极为阳极，第二电极为阴极。
  5. 根据权利要求4所述的有机发光二极管，其中，所述有机发光二极管还包括：空穴注入层，设置在第一电极和发光层之间，
    其中，导电层位于发光层和空穴注入层之间。
  6. 根据权利要求4所述的有机发光二极管，其中，所述有机发光二极管还包括：电子注入层，设置在第二电极和发光层之间，
    其中，导电层位于发光层和电子注入层之间。
  7. 根据权利要求4所述的有机发光二极管，其中，所述有机发光二极管还包括：
    空穴注入层，设置在第一电极和发光层之间；
    电子注入层，设置在第二电极和发光层之间；
    其中，导电层位于发光层与空穴注入层之间和/或发光层与电子注入层之间。
  8. 根据权利要求4所述的有机发光二极管，其中，所述有机发光二极管还包括：
    空穴注入层，设置在第一电极和发光层之间；
    空穴传输层，设置在空穴注入层和发光层之间；
    电子注入层，设置在第二电极和发光层之间；
    电子传输层，设置在电子注入层和发光层之间；
    其中，导电层位于发光层与空穴传输层之间和/或发光层与电子传输层之间。
PCT/CN2015/087928 2015-08-06 2015-08-24 有机发光二极管 Ceased WO2017020366A1 (zh)

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