WO2016208792A1 - High-speed texturing method and system - Google Patents

High-speed texturing method and system Download PDF

Info

Publication number
WO2016208792A1
WO2016208792A1 PCT/KR2015/006629 KR2015006629W WO2016208792A1 WO 2016208792 A1 WO2016208792 A1 WO 2016208792A1 KR 2015006629 W KR2015006629 W KR 2015006629W WO 2016208792 A1 WO2016208792 A1 WO 2016208792A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
high speed
surface
processing
laser
Prior art date
Application number
PCT/KR2015/006629
Other languages
French (fr)
Korean (ko)
Inventor
이천재
박훈
박재웅
Original Assignee
주식회사 코윈디에스티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020150091448A priority Critical patent/KR20170001452A/en
Priority to KR10-2015-0091448 priority
Application filed by 주식회사 코윈디에스티 filed Critical 주식회사 코윈디에스티
Publication of WO2016208792A1 publication Critical patent/WO2016208792A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The present invention relates to a high-speed texturing system comprising: a substrate adsorption porous chuck on which a wafer is disposed; a transfer unit for transferring the substrate adsorption porous chuck; a wafer inspection device for scanning the surface of the wafer on the substrate adsorption porous chuck being transferred; a high-speed surface processing device for processing the scanned surface of the wafer by a laser and supplying a purge gas to remove a processing by-product; and a wafer cleaning device for cleaning the processed wafer.

Description

High speed texturing methods and systems

Embodiments of the present invention relate to high speed texturing methods and systems.

The present invention is an energy technology development project carried out by KOWINDS Co., Ltd. (2013.08.01 ~ 2016.07.31) as a progress task (task number: 20133030011040) of the Ministry of Trade, Industry and Energy. Development of hydrofluoric acid pre-texturing technology for polycrystalline solar cells].

Texturing refers to the overall surface structuring process of processing to have an uneven structure on the silicon wafer surface.

On the other hand, the crystalline silicon wafer used in the solar cell manufacturing process includes a sawdamaged layer immediately after wire-sawing. The crystal damage layer healing process is performed before the etching process to remove the crystal damage layer.

After the healing process, the wafer undergoes a surface structuring step to increase power generation efficiency and typically uses an etching process using chemical liquids.

In general, the wet etching process used for the surface structuring uses a mixed solution of HF and HNO 3, which is an isotropic etching solution having a uniform etching rate regardless of the crystal direction in the case of a polycrystalline silicon wafer.

Process of this kind As the etchant, a wet etching process may be performed using 20-55% water, 10-40% concentrated hydrofluoric acid (concentration: 50%), concentrated nitric acid (concentration: 65%), and the like.

However, hydrofluoric acid (HF) and the like used in texturing of conventional wafers may be killed by chemicals that are very harmful to the human body. Nevertheless, the texturing efficiency was low.

Since the process of removing the crystal damage layer of the polycrystalline silicon wafer is an essential process that can greatly affect the energy conversion efficiency of the solar cell, it is required to improve the process method to perform this process more effectively.

The present invention has been made to solve the above-described problems, when the conventional texturing processing of the wafer used a human harmful chemicals, such as hydrofluoric acid, and yet there was a disadvantage that the texturing efficiency is low, according to the present invention the remaining processing of the wafer It is possible to improve the processing quality and expand the application by easily removing the water and supplying the processing source.

According to the present invention, various surface treatment processes are possible, such as etching-based texturing, patterning, cutting, and the like, and thin films of SiO 2, Cr, W, and Mo on a deposition substrate can be formed. I would like to.

The present invention is intended to reduce the use of chemical liquids, to improve the production cost by improving the quality control and production efficiency through inspection during processing of the wafer.

A high-speed texturing system according to the present embodiment for solving the above problems is a substrate adsorption porous chuck on which a wafer is disposed; A transfer unit for transferring the substrate adsorption porous chuck; A wafer inspection device for scanning a surface of the wafer on the transferred substrate adsorption porous chuck; A high speed surface processing apparatus for processing a surface of the scanned wafer with a laser and supplying a purge gas to remove processing byproducts; And a wafer cleaning apparatus for cleaning the processed wafer.

According to another embodiment of the present invention, the chemical liquid processing unit including a chemical residue for removing the processing residue and damage of the wafer, and the substrate liquid treatment substrate immersed porous substrate chuck on which the wafer is disposed; may further include a.

According to another embodiment of the present invention, the wafer inspection apparatus may scan by inspecting a defect state generated during the entire process or transfer of the surface of the wafer.

According to another embodiment of the present invention, the transfer unit may be configured as a conveyor.

According to another embodiment of the present invention, the high speed surface processing apparatus includes a high speed scanner into which a laser is introduced; A multi-array window for irradiating the introduced laser with a laser of a plurality of focal points; And an atmospheric pressure chamber in which the multi-array window is disposed and including a gas supply unit supplying a purge gas to the wafer.

According to another embodiment of the present invention, the high speed surface processing apparatus may further include an external air blocking unit for forming a blocking wall by injecting a high-pressure air, a mixed gas or an inert gas to the peripheral portion of the processing member.

According to another embodiment of the present invention, the high speed scanner includes: a polygon mirror on which the laser is reflected; And a lens unit focusing the reflected laser.

According to another embodiment of the present invention, the multi-array window comprises: an upper window; Lower window; And a multi array formed between the upper window and the lower window and each including a plurality of lenses.

According to another embodiment of the present invention, the atmospheric chamber includes an upper plate; An intermediate plate formed on one surface of the upper plate and having a flow path through which the purge gas moves; And a lower plate formed on one surface of the intermediate plate and having a supply hole through which the purge gas is supplied.

According to another embodiment of the present invention, the wafer cleaning apparatus includes a cleaning liquid spraying apparatus for spraying the cleaning liquid to remove the processing residue and laser damage of the processed wafer; Purified water injection device for washing the washing liquid by spraying purified water (DI Water); And a drying apparatus for drying the purified water.

A high speed texturing method according to the present invention comprises the steps of placing a wafer on a substrate adsorption porous chuck; A transfer unit transferring the substrate adsorption porous chuck; A wafer inspection apparatus scanning the surface of the wafer on the transported substrate adsorption porous chuck; A high speed surface processing apparatus laser processing the surface of the scanned wafer and supplying a purge gas to remove processing byproducts; And a wafer cleaning apparatus cleaning the processed wafer.

According to the present invention, it is possible to remove the processing residue of the wafer and to supply the processing source, thereby improving the processing quality and expanding the application, and the continuous processing of the wafer through the high-speed scanner and the conveyor.

According to the present invention, various surface treatment processes are possible, such as etching-based texturing, patterning, cutting, and the like, and thin films of SiO 2, Cr, W, and Mo on a deposition substrate can be formed. Do.

The present invention can reduce the use of chemical liquid, and can improve the manufacturing cost by improving the quality control and production efficiency through inspection during processing of the wafer.

1 is a diagram illustrating a high speed texturing system according to an embodiment of the present invention.

2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.

3 is a view for explaining a high speed processing of the high speed texturing system according to an embodiment of the present invention.

4 is a diagram illustrating a wafer processed by a high-speed texturing system according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention. However, in describing the embodiments, when it is determined that detailed descriptions of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted. In addition, the size of each component in the drawings may be exaggerated for description, it does not mean the size that is actually applied.

1 is a view showing a high-speed texturing system according to an embodiment of the present invention, Figure 2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.

1 and 2 will be described a high-speed texturing system according to an embodiment of the present invention.

As shown in FIG. 1, the high-speed texturing system according to an embodiment of the present invention includes a substrate adsorption porous chuck 140, a transfer unit 300, a wafer inspection apparatus 200, a high-speed surface processing apparatus 100, and a wafer cleaning. Device 400.

In the substrate adsorption porous chuck 140, a wafer 105 is disposed.

The substrate adsorption porous chuck 140 is transported by the transport unit 300, where the transport unit 300 may be configured as a conveyor.

The wafer inspection apparatus 200 scans the surface of the wafer 105 on the transferred substrate adsorption porous chuck 140, which is transferred by the transfer unit 300 as described above, and the wafer inspection apparatus 200 is illuminated 201. ), The surface of the wafer 105 can be photographed, and defects on the surface of the wafer 105 can be inspected.

In addition, there is a buffer station (not shown) that accumulates inspection results and defective wafers generated during the process so as not to interfere with the process flow.

Meanwhile, according to one embodiment of the present invention, healing may be performed before inspection of the wafer 105.

To this end, as shown in FIG. 2, the substrate adsorption porous chuck 140 on which the wafer 105 is disposed is immersed on the chemical liquid 171 in the chemical liquid processing unit 170. For example, the wafer 105 may be deepened in the KOH chemical liquid at the time of healing, and may be cleaned by spraying the cleaning liquid through the cleaning liquid spraying device 103.

The high speed surface processing apparatus 100 may process the surface of the scanned wafer 105 with a laser 101, and supply a purge gas to the surface of the wafer 105 to remove processing byproducts.

In more detail, the laser 101 is introduced into the high speed scanner 110 to process the wafer 105, and the high speed scanner 110 controls the laser and transmits the laser to the multi array window 120.

The high speed scanner 110 may include a polygon mirror 111 and a lens unit 115. In another embodiment, the high speed scanner 110 may be configured as an objective lens.

The polygon mirror 110 reflects the laser 101, and the lens unit 115 focuses the reflected laser 101. In this case, according to the exemplary embodiment of FIG. 1, the lens unit 115 includes a concave lens 116 and a convex lens 117 so that the laser 101 is placed on the wafer 105 through the multi-array window 120. Can be focused.

The multi-array window 120 irradiates the introduced laser with a laser of a plurality of focal points.

More specifically, the multi array window 120 may include an upper window, a lower window, and a multi array. The multi-array is formed between the upper window and the lower window, and each of the multi-arrays includes a plurality of lenses so that the introduced laser can be irradiated with the lasers of a plurality of focal points.

Meanwhile, according to the present invention, the laser may shorten the pulse width to be less than picoseconds to minimize processing damage of the wafer and form a nano-level pyramid.

Atmospheric pressure chamber 130 is a multi-array window 120 configured as described above is disposed.

The atmospheric chamber 130 includes a gas supply unit 136 for supplying a purge gas to the wafer 105.

In addition, the atmospheric pressure chamber 130 may include an upper plate, an intermediate plate, and a lower plate.

In more detail, the intermediate plate may be formed on one surface of the upper plate so that a flow path 134 through which the purge gas moves may be formed, and the lower plate may be formed on one surface of the intermediate plate to supply the purge gas. A supply port may be formed to supply the purge gas to the wafer 105, and through this configuration, the purge gas may be efficiently supplied and the size of the atmospheric pressure chamber 130 may be minimized.

In the substrate adsorption porous chuck 140, a wafer 105 is disposed, and a plurality of focal lasers flowing through the multi-array window 130 are irradiated onto the wafer 105.

In the laser processing of the wafer 105, purge gas is supplied through the gas supply unit 136 of the atmospheric pressure chamber 130 to remove particles generated during laser processing.

In addition, according to the present invention, the blocking wall 160 may be formed by spraying high-pressure air, a mixed gas, or an inert gas on the periphery of the wafer 105 through an outside air blocking unit.

Therefore, in the conventional texturing of the wafer, human harmful chemicals such as hydrofluoric acid were used. However, the texturing efficiency was low, but according to the present invention, the processing residue of the wafer 105 was removed and the supply of the processing source was prevented. It is easy to improve the processing quality and to expand the application.

The wafer cleaning apparatus 400 cleans the wafer 105 processed by the high speed surface processing apparatus 100.

In more detail, the wafer cleaning apparatus 400 may include a cleaning liquid spraying device 401, a purified water spraying device 402, and a drying device 403.

The cleaning liquid spraying device 401 sprays the cleaning liquid to remove the processing residue and laser damage of the processed wafer 105, and the purified water spraying device 402 sprays the purified water to wash the cleaning liquid. The drying apparatus 403 dries the purified water remaining on the wafer 105.

At this time, the time t1 of spraying the cleaning liquid and the time t2 of spraying purified water may be controlled by the moving distance or the amount of the spraying liquid on the transfer unit, and the concentration of the washing liquid in the spraying liquid.

3 is a view for explaining a high speed processing of the high speed texturing system according to an embodiment of the present invention, Figure 4 is a view showing a wafer processed by the high speed texturing system according to an embodiment of the present invention.

In the conventional wafer processing, when performing biaxial machining of x and y, the speed was slow at 2 m / s.

However, according to the exemplary embodiment of the present invention, since the polygon mirror 110 is used, when a 2 MHz laser is used, processing of a 156 X 156 size wafer at a speed of 20 m / s at a rate of 20 m / s or less per sheet is performed within 4 seconds. This is possible.

In addition, according to an embodiment of the present invention when using the four laser head module it is possible to process within 1 second per sheet.

As shown in FIG. 4, since the wafer before processing has a damaged portion on the surface of the wafer as in the wafer photo 410 before processing, the wafer is subjected to a healing treatment as in the wafer photo 420 that has been treated.

Thereafter, the wafer is processed as in the wafer photo 430 after laser processing. In this case, according to the present invention, the laser may shorten the pulse width to be less than picoseconds to minimize processing damage of the wafer and form a nano-level pyramid.

Thereafter, the residue may be removed through cleaning as in the wafer photo 440 after cleaning.

In the detailed description of the invention as described above, specific embodiments have been described. However, many modifications are possible without departing from the scope of the invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined not only by the claims, but also by those equivalent to the claims.

Claims (11)

  1. A substrate adsorption porous chuck on which the wafer is disposed;
    A transfer unit for transferring the substrate adsorption porous chuck;
    A wafer inspection device for scanning a surface of the wafer on the transferred substrate adsorption porous chuck;
    A high speed surface processing apparatus for processing a surface of the scanned wafer with a laser and supplying a purge gas to remove processing byproducts;
    A wafer cleaning apparatus for cleaning the processed wafers;
    High speed texturing system comprising a.
  2. The method according to claim 1,
    A chemical liquid processing unit including a chemical liquid for removing processing residues and damage portions of the wafer, wherein the chemical liquid processing unit on which the substrate adsorption porous chuck on which the wafer is disposed is immersed;
    A high speed texturing system further comprising.
  3. The method according to claim 1,
    The wafer inspection device,
    A high speed texturing system that scans and inspects defect conditions that occur during the entire process or transfer of the wafer surface.
  4. The method according to claim 1,
    The transfer unit,
    High speed texturing system that is a conveyor.
  5. The method according to claim 1,
    The high speed surface processing apparatus,
    A high speed scanner into which a laser is introduced;
    A multi-array window for irradiating the introduced laser with a laser of a plurality of focal points; And
    An atmospheric pressure chamber in which the multi-array window is disposed, the atmospheric pressure chamber including a gas supply unit supplying a purge gas to the wafer;
    High speed texturing system comprising a.
  6. The method according to claim 5,
    The high speed surface processing apparatus,
    An external air blocking unit for forming a blocking wall by injecting high-pressure air, a mixed gas, or an inert gas into the periphery of the processing member;
    A high speed texturing system further comprising.
  7. The method according to claim 5,
    The high speed surface processing apparatus,
    The high speed scanner,
    A polygon mirror on which the laser is reflected; And
    A lens unit focusing the reflected laser;
    High speed texturing system comprising a.
  8. The method according to claim 5,
    The multi array window,
    Upper window;
    Lower window; And
    A multi array formed between the upper window and the lower window and each including a plurality of lenses;
    High speed texturing system comprising a.
  9. The method according to claim 5,
    The atmospheric pressure chamber,
    Upper plate;
    An intermediate plate formed on one surface of the upper plate and having a flow path through which the purge gas moves; And
    A lower plate formed on one surface of the intermediate plate and having a supply hole through which the purge gas is supplied;
    High speed texturing system comprising a.
  10. The method according to claim 1,
    The wafer cleaning device,
    A cleaning liquid spraying device for spraying a cleaning liquid to remove processing residues and laser damage of the processed wafer;
    Purified water injection device for washing the washing liquid by spraying purified water (DI Water); And
    A drying apparatus for drying the purified water;
    High speed texturing system comprising a.
  11. Placing the wafer on the substrate adsorption porous chuck;
    A transfer unit transferring the substrate adsorption porous chuck;
    A wafer inspection apparatus scanning the surface of the wafer on the transported substrate adsorption porous chuck;
    A high speed surface processing apparatus laser processing the surface of the scanned wafer and supplying a purge gas to remove processing byproducts; And
    A wafer cleaning apparatus cleans the processed wafer;
    Fast texturing method comprising a.
PCT/KR2015/006629 2015-06-26 2015-06-29 High-speed texturing method and system WO2016208792A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020150091448A KR20170001452A (en) 2015-06-26 2015-06-26 High speed texturing method and system
KR10-2015-0091448 2015-06-26

Publications (1)

Publication Number Publication Date
WO2016208792A1 true WO2016208792A1 (en) 2016-12-29

Family

ID=57585873

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/006629 WO2016208792A1 (en) 2015-06-26 2015-06-29 High-speed texturing method and system

Country Status (2)

Country Link
KR (1) KR20170001452A (en)
WO (1) WO2016208792A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211680A1 (en) * 2003-05-23 2005-09-29 Mingwei Li Systems and methods for laser texturing of surfaces of a substrate
US20090275212A1 (en) * 2008-05-02 2009-11-05 Shinichi Kato Method and apparatus for processing semiconductor wafer after impurity implantation
US20100197116A1 (en) * 2008-03-21 2010-08-05 Imra America, Inc. Laser-based material processing methods and systems
US20120017989A1 (en) * 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
WO2014158346A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Laser ablation platform for solar cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211680A1 (en) * 2003-05-23 2005-09-29 Mingwei Li Systems and methods for laser texturing of surfaces of a substrate
US20100197116A1 (en) * 2008-03-21 2010-08-05 Imra America, Inc. Laser-based material processing methods and systems
US20090275212A1 (en) * 2008-05-02 2009-11-05 Shinichi Kato Method and apparatus for processing semiconductor wafer after impurity implantation
US20120017989A1 (en) * 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
WO2014158346A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Laser ablation platform for solar cells

Also Published As

Publication number Publication date
KR20170001452A (en) 2017-01-04

Similar Documents

Publication Publication Date Title
KR101925957B1 (en) Hybrid laser and plasma etch wafer dicing using substrate carrier
US20160059359A1 (en) Method and device for providing through-openings in a substrate and a substrate produced in said manner
KR102036708B1 (en) Multi-layer mask for substrate dicing by laser and plasma etch
US7669608B2 (en) Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle
US5660642A (en) Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
US8623232B2 (en) Method and device for treating silicon wafers
KR101032225B1 (en) Substrate cleaning device and substrate cleaning method
KR0165467B1 (en) Wafer debonder and wafer debonding method using the wafer debonder
DE69832131T2 (en) Method for the treatment of semiconductor wafers on a robotic conveyor line with in-situ detection of particles on the wafer backside
KR101011528B1 (en) Substrate processing system and substrate cleaning apparatus
CN100481338C (en) Proximity meniscus manifold
DE10318681B4 (en) Method and device for removing an edge region of a substrate layer and for substrate coating and substrate
CN104022080B (en) The processing method of chip
KR20140041751A (en) In-situ deposited mask layer for device singulation by laser scribing and plasma etch
Park et al. A practical excimer laser-based cleaning tool for removal of surface contaminants
KR100742279B1 (en) Apparatus and method for manufacturing semiconductor device
CN102218415B (en) Method and device for cleaning tokamak first mirror by vacuum ultraviolet laser
JP3185753B2 (en) Method for manufacturing semiconductor device
TWI222154B (en) Integrated system for processing semiconductor wafers
US9236284B2 (en) Cooled tape frame lift and low contact shadow ring for plasma heat isolation
KR20090029632A (en) Substrate processing apparatus
US8415587B2 (en) Fiber-optic beam delivery system for wafer edge processing
TW200303577A (en) Dividing method of semiconductor wafer
DE10352423B3 (en) Reducing the reflection on semiconductor surfaces in the manufacture of semiconductor substrates for solar cells comprises subjecting regions to dry chemical etching, in which the aspect ratio of recesses is obtained
US20080176002A1 (en) Substrate treatment method, coating film removing apparatus, and substrate treatment system

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15896426

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15896426

Country of ref document: EP

Kind code of ref document: A1