WO2016176945A1 - 一种膜厚测试装置及膜厚测试方法 - Google Patents

一种膜厚测试装置及膜厚测试方法 Download PDF

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WO2016176945A1
WO2016176945A1 PCT/CN2015/089616 CN2015089616W WO2016176945A1 WO 2016176945 A1 WO2016176945 A1 WO 2016176945A1 CN 2015089616 W CN2015089616 W CN 2015089616W WO 2016176945 A1 WO2016176945 A1 WO 2016176945A1
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Prior art keywords
film
tested
film thickness
film layer
electrode
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PCT/CN2015/089616
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English (en)
French (fr)
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王锦谦
王路
张玉军
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京东方科技集团股份有限公司
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Priority to US15/122,731 priority Critical patent/US9879971B2/en
Publication of WO2016176945A1 publication Critical patent/WO2016176945A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/02—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness
    • G01B5/06—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness for measuring thickness
    • G01B5/066—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness for measuring thickness of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
    • G01B7/085—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means for measuring thickness of coating

Definitions

  • the invention relates to the technical field of film thickness testing, in particular to a film thickness testing device and a film thickness testing method.
  • the thickness of the film is the basis for detecting the properties of the film. If the thickness of a batch of single-layer film is not uniform, it will not only affect the tensile strength and barrier properties of the film, but also It affects the subsequent processing of the film, so the film thickness detection technology is widely used in the film manufacturing industry.
  • the mechanical probe method uses one or more probes equipped with probes to perform lateral contact scanning on the surface of the film to be tested, during the scanning process, the probe It will move up and down with the tiny peaks and valleys on the surface of the film sample to be tested. The height change of the probe will be converted into an electrical signal by the displacement sensor. Finally, these signals will be recorded to draw the surface morphology of the film to be tested and test the film to be tested. The film thickness of the sample.
  • the probe when testing the film sample to be tested by the step test using the step test method, the probe will be in contact with the surface of the film sample to be tested. Since the diameter of the probe is small, it is easy to measure when it is in contact with the surface of the film sample to be tested. The surface of the film sample is damaged; in addition, when the step meter tests the film sample to be tested, the probe needs to perform horizontal contact scanning on the film sample to be tested, and the scanning process takes time, which greatly affects the testing efficiency.
  • the embodiment of the invention provides a film thickness testing device and a film thickness testing method, which can reduce or avoid the damage of the surface of the sample to be tested by the existing step meter when testing the sample to be tested, and the test efficiency is low. problem.
  • An embodiment of the present invention provides a film thickness testing device, the device comprising: a planar indenter, a collecting unit, and a processing unit electrically connected to the collecting unit, the planar indenter comprising: a bottom plate and a formation a piezoelectric film layer under the bottom plate, the collecting unit includes a plurality of collecting circuits uniformly distributed above the piezoelectric film layer and spaced apart from each other, and the collecting circuit is attached to the bottom plate.
  • the collecting circuit is configured to collect the piezoelectric film layer corresponding to the collecting circuit The current signal generated when the position is deformed,
  • the processing unit is configured to calculate a film thickness of the film sample to be tested according to the current signals collected by the respective collection circuits.
  • each of the acquisition circuits includes a first electrode, a second electrode, and a charge converter for converting a charge into a current signal, the first electrode and the charge conversion
  • the electrodes are electrically connected and both attached to the bottom plate, and the second electrode is disposed on a surface of the piezoelectric film layer opposite to the bottom plate.
  • first electrode and the charge converter may be disposed on a surface of the bottom plate opposite to the piezoelectric film layer.
  • each of the acquisition circuits includes: a first electrode, a second electrode, and a charge converter for converting a charge into a current signal, the first electrode, the second electrode, and Each of the charge converters is disposed on a surface of the bottom plate opposite to the piezoelectric film layer, and the first electrode and the second electrode are electrically connected to the charge converter, respectively.
  • the first electrode and charge converter belonging to the same acquisition circuit are integrated on a nanoscale chip.
  • the planar indenter further includes: a pressure transmitting layer, the pressure transmitting layer and the bottom plate being respectively fixed on both sides of the piezoelectric film layer.
  • a plurality of pressure buffer holes are evenly distributed on the pressure transmitting layer.
  • the pressure transmitting layer is made of polyimide.
  • an embodiment of the present invention provides a film thickness testing method implemented based on the above film thickness testing device, the method comprising:
  • the calculating a film thickness of the film to be tested according to the current signal comprises:
  • the calculating a shape variable generated when a position corresponding to each of the collecting circuits in the piezoelectric film layer is deformed according to the current signal includes:
  • the film sample to be tested includes: a film area to be tested and a film area to be tested,
  • Calculating a film thickness of the film to be tested according to the shape variable comprising:
  • the calculating a film thickness of the film to be tested according to a difference between the first shape variable and the second shape variable comprises:
  • the planar indenter with the piezoelectric film layer is pressed into contact with the surface of the film sample to be tested, due to the planar indenter and the film to be tested.
  • the film thickness testing device further includes a collecting unit, the collecting The unit includes a plurality of acquisition circuits uniformly distributed over the piezoelectric film layer and spaced apart from each other, so that the film thickness testing device can simultaneously collect current signals generated when the piezoelectric film layers are deformed at multiple positions, thereby simultaneously detecting the to-be-tested.
  • FIG. 1 is a schematic structural view of a film thickness testing device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a planar indenter according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a bottom plate according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of an acquisition circuit according to an embodiment of the present invention.
  • Figure 5 is a bottom plan view of a bottom plate according to an embodiment of the present invention.
  • Figure 6 is a bottom plan view of a piezoelectric film layer provided by an embodiment of the present invention.
  • FIG. 7 is a circuit diagram of a charge converter provided by an embodiment of the present invention.
  • FIG. 8 is a schematic structural view of a planar indenter according to another embodiment of the present invention.
  • FIG. 9 is a schematic structural view of a pressure transmission layer according to another embodiment of the present invention.
  • FIG. 10 is a flow chart of a film thickness testing method provided by an embodiment of the present invention.
  • FIG. 11 is a schematic structural view of a film sample to be tested according to an embodiment of the present invention.
  • FIG. 12 is a flow chart of a method for calculating a film thickness of a film sample to be tested according to an embodiment of the present invention
  • FIG. 13 is a schematic diagram showing the principle of measuring the film thickness of a film sample to be tested according to an embodiment of the present invention.
  • the device includes: a planar indenter 1, an acquisition unit 2, and a processing unit 3, and the processing unit 3 and the collection unit 2 are electrically connection.
  • planar indenter 1 provides a schematic structural view of a planar indenter according to an embodiment of the present invention.
  • the planar indenter 1 includes a bottom plate 11 and a piezoelectric film layer 12 formed under the bottom plate 11.
  • the acquisition circuit can include at least a first electrode and a charge converter, and the acquisition unit 2 can include a plurality of such acquisition circuits.
  • the collecting circuit can be formed on one surface of the bottom plate 11 facing the piezoelectric film layer 12, and therefore, when the piezoelectric film layer 12 is combined with the bottom plate 11, a plurality of collecting circuits can be considered to be distributed on the piezoelectric film layer 12.
  • the acquisition unit 2 can include a plurality of acquisition circuits 21 that are evenly distributed over the piezoelectric film layer 12 and spaced apart from each other, and the acquisition circuit 21 can be attached to the substrate 11.
  • the acquisition circuit may be disposed on a surface of the bottom plate 11 opposite to the piezoelectric film layer 12 (i.e., a surface of the bottom plate 11 facing the piezoelectric film layer 12).
  • the acquisition circuit 21 is configured to collect a current signal generated when the position corresponding to the acquisition circuit 21 in the piezoelectric film layer 12 is deformed.
  • the processing unit 3 is configured to calculate the film thickness of the film sample to be tested according to the current signals collected by the respective acquisition circuits 21.
  • the plurality of acquisition circuits 21 may be arranged in a matrix, so that the acquisition circuit 21 can more efficiently acquire current signals generated by deformation of the piezoelectric film layer 12 at various positions.
  • the planar indenter with the piezoelectric film layer is in contact with the surface of the film sample to be tested, due to the planar indenter and the film sample to be tested.
  • the film thickness testing device further includes a collecting unit, and the collecting unit includes A plurality of acquisition circuits evenly distributed on the piezoelectric film layer and spaced apart from each other, so that the film thickness test device can simultaneously collect current signals generated when the piezoelectric film layers are deformed at multiple positions, thereby simultaneously detecting the film samples to be tested.
  • the film thickness at multiple locations does not require horizontal contact scanning like the existing stepper, which is more efficient.
  • the bottom plate 11 may be made of an insulating material to avoid interference with the current signal generated by the piezoelectric film layer 12, thereby improving the accuracy of detection.
  • Piezoelectric film layer 12 can be taken Use materials such as polyvinylidene fluoride or zinc oxide.
  • each acquisition circuit 21 may include a first electrode 211, a second electrode 212, and a device for converting a charge into a current signal.
  • Figure 5 provides a bottom view of a backplane in accordance with one embodiment of the present invention.
  • a first electrode 211 and a charge converter 213 are electrically connected and each attached to a backplane 11.
  • both the first electrode 211 and the charge converter 212 may be disposed on the surface of the bottom plate 11 opposite to the piezoelectric film layer 12, that is, on the piezoelectric film layer 12 facing the bottom plate 11. on the surface.
  • a second electrode 212 may be disposed on a surface of the piezoelectric film layer 12 opposite to the bottom plate 11.
  • the second electrode 212 on the piezoelectric film layer 12 and the first electrode 122 on the bottom plate can be offset from a certain position to avoid direct contact, so that the potential difference between the first electrode and the second electrode can be utilized to generate Current signal.
  • a conductive metal capable of contacting the second electrode may be disposed on the substrate, and the conductive metal and the first electrode may be electrically connected to the charge converter, respectively.
  • the second electrode 212 is provided on the surface of the piezoelectric film layer 12 opposite to the bottom plate 11, the position corresponding to the collecting circuit 21 in the piezoelectric film layer 12 is The second electrode 212 is provided, and the deformation of the piezoelectric film layer 12 at a position corresponding to the collecting circuit 21 is affected by the second electrode 212, and the film sample to be tested is calculated by using the difference value of the piezoelectric film layer 12 shape variable. In the case of the film thickness, the influence of the second electrode 212 can be eliminated.
  • the second electrode 212 is disposed on the piezoelectric film layer at intervals, the influence on the deformation of the piezoelectric film layer is small, so the second electrode 212 The effect of the film thickness test device on the measurement of the film thickness of the film to be tested is small or even negligible.
  • each acquisition circuit can include a first electrode, a second electrode, and a charge converter for converting a charge into a current signal, each of the first electrode, the second electrode, and the charge converter A surface opposite to the piezoelectric film layer of the bottom plate may be disposed, and the first electrode and the second electrode are electrically connected to the charge converter, respectively.
  • the first electrode, the second electrode, and the charge converter in each of the acquisition circuits can be simultaneously disposed on the surface of the bottom plate opposite to the piezoelectric film layer.
  • the potential difference between the first electrode and the second electrode can be utilized to generate a current signal.
  • the first electrode and the second electrode in each acquisition circuit are also They may be provided on both surfaces of the piezoelectric film layer, that is, the surface of the piezoelectric film layer opposite to the bottom plate and the surface away from the platen.
  • the piezoelectric film layer When the piezoelectric film layer is pressed, a potential difference is formed between the first electrode and the second electrode, and the potential difference is supplied to the charge converter to form a current signal.
  • FIG. 7 provides a circuit diagram of a charge converter according to an embodiment of the present invention.
  • the charge converter 213 includes an operational amplifier (Operational Amplifier ("OPA"), a capacitor C, and a resistor R.
  • OPA inverting input V - 211 connected to the first electrode, with the non-inverting input terminal of the OPA V + to ground, the inverting input terminal of the OPA V - are also electrically connected to one end of the capacitor C and a resistor R, a capacitor C and a resistor R the other end is connected electrically to the output terminal V out of the OPA, the OPA positive supply terminal V s + V s- and the negative power source terminal respectively connected to the positive and negative electrical power source.
  • the charge converter 213 amplifies the current signal for identification by the processing unit 3.
  • the first electrode 211 and the charge converter 213 belonging to the same acquisition circuit 21 may be integrated on one nanoscale chip.
  • the first electrode 211 of the acquisition circuit 21 is in contact with the piezoelectric film layer 12.
  • the size of the second electrode 212 can also be nanoscale.
  • the specification of the first electrode 211 in the acquisition circuit 21 affects the measurement accuracy of the film thickness test device.
  • the measurement accuracy of the film thickness test device is higher, and the measurement is performed. The values are more accurate and reliable.
  • FIG. 8 is a schematic structural view of a planar indenter according to another embodiment of the present invention.
  • the planar indenter 1 is different from the planar indenter shown in FIG. 2 in that the planar indenter 1 further includes a pressure transmitting layer 13 .
  • the pressure transmitting layer 13 and the bottom plate 11 are respectively fixed to both sides of the piezoelectric film layer 12.
  • both the pressure transmitting layer 13 and the bottom plate 11 may be fixed to the piezoelectric film layer 12 by a uniformly applied adhesive layer (not shown), and the bonding layer may be epoxy glue (for example, An epoxy glue doped with a conductive agent).
  • epoxy glue for example, An epoxy glue doped with a conductive agent.
  • the piezoelectric film layer 12 may have a small range of deformation variables, which may limit the film thickness that can be measured by the film thickness testing device.
  • a pressure transmitting layer 13 is added to one side of the piezoelectric film layer 12.
  • the film thickness testing device measures the film thickness of the film sample to be tested
  • the pressure transmitting layer 13 is in contact with the surface of the film sample to be tested, and
  • the piezoelectric film layer 12 is deformed together, so that the film sample to be tested only needs to be smaller.
  • the piezoelectric film layer 12 in the planar indenter 1 is capable of generating sufficient deformation, so that the planar indenter 1 can be adapted to measure a wider range of film thicknesses.
  • FIG. 9 provides a schematic structural view of a pressure transmitting layer according to an embodiment of the present invention. Referring to FIG. 9, a plurality of pressure buffer holes 131 may be uniformly distributed on the pressure transmitting layer 13.
  • a plurality of pressure buffer holes 131 are evenly distributed on the pressure transmitting layer 13, so that the shape of the pressure transmitting layer 13 can be changed uniformly, and the pressure transmitted to the piezoelectric film layer 12 can be made more uniform, thereby making the film
  • the measurement of the thick test device is more accurate.
  • the pressure transmitting layer 13 in FIG. 9 is only a schematic structural view, and does not limit the size of the pressure buffer hole 131 and the actual arrangement manner.
  • the pressure transmitting layer 13 may be made of polyimide to increase the durability of the pressure transmitting layer 13.
  • pretreating the film sample to be tested includes preparing a region free of the film to be tested at an adjacent position of the portion of the sample to be measured in the film sample to be tested, forming a step.
  • the planar indenter 1 is vertically pressed against the surface of the film sample to be tested, and the film thickness of the film sample to be tested is measured under preset test conditions. Specifically, after the planar indenter 1 is pressed against the surface of the film sample to be tested, the piezoelectric film layer 12 generates different shape variables at positions corresponding to the film area to be tested and the film area not to be tested, and the collecting circuit 21 collects the shape. The current signal generated when the piezoelectric film layer 12 at the position is deformed is processed, and the processing unit 3 calculates the film thickness of the film sample to be tested according to the current signals collected by the plurality of acquisition circuits 21 (for the specific calculation process, see the film thickness test below). method).
  • the preset conditions to be tested may include: the height of the planar indenter 1 is constant every time, the height at the position where the film sample to be tested is placed is constant, and the like.
  • planar indenter 1 is returned to the initial height, and under the same test conditions, the above process is repeated to measure the film thickness at different positions on the surface of the film sample to be tested.
  • Figure 10 provides a flow chart of a film thickness testing method in accordance with one embodiment of the present invention, which may be implemented using a film thickness testing device including the planar indenter shown in Figure 2 or Figure 8, see Figure 10, which includes :
  • step S21 the planar indenter is pressed against the surface of the film sample to be tested.
  • the film thickness test conditions of the film sample to be tested may be the same, for example, the height at the position where the film sample to be tested is placed is the same, and the plane head is moved downward each time. The vertical distance is also the same, and the initial position of the downward movement of the planar indenter is also the same.
  • Step S22 collecting a current signal generated when the position corresponding to each of the acquisition circuits is deformed in the piezoelectric film layer.
  • Step S23 calculating a film thickness of the film sample to be tested according to the current signal.
  • the film sample to be tested measured by the film thickness test method may be pretreated, and a completely film to be tested is prepared at an adjacent position of the sample portion of the film sample to be measured to be measured. The area that forms the steps.
  • the film sample to be tested includes: a substrate 100 and a film to be tested 200 grown on the substrate 100, and the film sample to be tested is used for Before the film thickness measurement, it may be pretreated to prepare a film-free film region 201 at an adjacent position of the sample portion (the film region to be tested 202) to be measured in the film sample to be tested, and correspondingly, The film area 201 to be tested is adjacent to the film area 202 to be tested, and a height difference is formed, which is the film thickness of the film sample to be tested. Further, the thickness of the substrate 100 used for each film sample to be tested may be the same.
  • the pretreatment can be performed by a mask coating method and an etching method, and can be the same as the method of forming a step for the film sample to be tested used in the step meter.
  • Figure 12 provides a flow chart of a method for calculating the film thickness of a film sample to be tested according to an embodiment of the present invention.
  • calculating the film thickness of the film sample to be tested based on the current signal can be achieved as follows:
  • Step S231 calculating a shape variable generated when the piezoelectric film layer is deformed corresponding to each of the acquisition circuits according to the current signal.
  • step S231 can be implemented as follows:
  • the shape variable generated when the position corresponding to each of the acquisition circuits in the piezoelectric film layer is deformed is obtained.
  • the above correspondence relationship can be obtained by a finite number of experiments under the same test conditions as the film thickness test device (ie, the shape variable of the piezoelectric film layer and the current signal generated when the piezoelectric film layer is deformed) Correspondence between the two).
  • the film thickness test device ie, the shape variable of the piezoelectric film layer and the current signal generated when the piezoelectric film layer is deformed
  • the two correspondence between the two.
  • a plurality of film samples of known film thickness may be used, and a pressure level head with a piezoelectric film layer is pressed against the surface of the film sample; and then, under the same test conditions, the piezoelectric film layer is recorded.
  • the generated current signal; finally, the piezoelectric film layer is determined by curve fitting method Correspondence between the generated current signal and the shape variable of the piezoelectric film layer (wherein the above known film thickness is the shape variable of the piezoelectric film layer).
  • Step S232 calculating a film thickness of the film sample to be tested according to the above-described shape variable.
  • the film sample to be tested includes: a film area to be tested 202 and a film area 201 to be tested, and step S232 can be implemented as follows:
  • the film thickness of the film sample to be tested is calculated based on the difference between the first shape variable and the second shape variable.
  • calculating the film thickness of the film sample to be tested according to the difference between the first shape variable and the second shape variable may be implemented as follows:
  • the film thickness of the film sample to be tested is calculated based on the difference between the average value of the plurality of first shape variables and the average value of the plurality of second shape variables.
  • the film thickness of the film sample to be tested can be more accurately measured by the above manner.
  • step S23 in the case where a layer of pressure transmitting layer is added under the piezoelectric film layer, when step S23 is implemented, it can be realized as follows:
  • the film thickness of the film sample to be tested is calculated from the total shape variables of the electric film layer and the pressure transmitting layer.
  • FIG. 13 is a schematic view showing the principle of measuring the film thickness of a film sample to be tested according to another embodiment of the present invention.
  • H1 is a general shape of a piezoelectric film layer and a pressure transmitting layer corresponding to a film region not to be tested.
  • the variable; H2 is a total shape variable of the piezoelectric film layer and the pressure transmitting layer corresponding to the film region 202 to be tested; the film thickness d of the film sample to be tested is the difference between H1 and H2.
  • the correspondence between the total shape variable of the piezoelectric film layer and the pressure transmitting layer and the current signal generated by the piezoelectric film layer may be set in advance, and the corresponding relationship may be used with the piezoelectric film layer shape variable and the piezoelectric film.
  • the correspondence between the current signals generated by the layers is the same.
  • the acquisition method is obtained, except that the piezoelectric film layer needs to be replaced with a piezoelectric film layer and a pressure transmitting layer.

Abstract

一种膜厚测试装置及膜厚测试方法，所述装置包括：平面压头（1）、采集单元（2）、处理单元（3），平面压头（1）包括：底板（11）和压电薄膜层（12），采集单元（2）包括多个均匀分布在压电薄膜层（12）上且相互间隔的采集电路（21），采集电路（21）用于采集压电薄膜层（12）中与采集电路（21）相对应的位置发生形变时产生的电流信号，处理单元（3）用于根据各个采集电路（21）采集到的电流信号计算待测薄膜样品的膜厚。所述的装置及方法通过采用带有压电薄膜层（12）的平面压头（1）与待测薄膜样品表面按压接触，使得平面压头（1）不会像探针一样对待测薄膜样品表面造成损伤，而且，该膜厚测试装置还包括多个均匀分布在压电薄膜层（12）上且相互间隔的采集电路（21），使得膜厚测试装置能同时探测多个位置的膜厚，测试效率更高。

Description

一种膜厚测试装置及膜厚测试方法 技术领域
本发明涉及膜厚测试技术领域，特别涉及一种膜厚测试装置及膜厚测试方法。
背景技术
在传统的薄膜制造工艺中，薄膜厚度是否均匀一致是检测薄膜各项性能的基础，倘若一批单层薄膜厚度不均匀，不但会影响到薄膜各处的拉伸强度、阻隔性等，更会影响薄膜的后续加工，故薄膜厚度检测技术在薄膜制造业得以广泛应用。
现有薄膜厚度测试方法中，机械探针法(又称台阶测试法)会采用一个或多个安装有探针的探头，对待测薄膜样品表面做横向接触式扫描，在扫描过程中，探针会随待测薄膜样品表面的微小峰谷做上下运动，探针的高度变化由位移传感器转变成电信号，最后记录这些信号，以绘制出待测薄膜样品表面形貌，并测试出待测薄膜样品的膜厚。
但是，在利用台阶测试法的台阶仪测试待测薄膜样品时，探针会与待测薄膜样品表面相接触，由于探针的直径较小，在其与待测薄膜样品表面接触时容易对待测薄膜样品表面造成损伤；另外，台阶仪测试待测薄膜样品时，探针需要对待测薄膜样品做横向接触式扫描，扫描过程需要消耗时间，极大的影响了测试效率。
发明内容
本发明实施例提供了一种膜厚测试装置及膜厚测试方法，可以减轻或避免现有的台阶仪在测试待测薄膜样品时，探针会对待测样品表面造成损伤，且测试效率低的问题。
本发明的一个实施例提供了一种膜厚测试装置，所述装置包括：平面压头、采集单元、以及与所述采集单元电连接的处理单元，所述平面压头包括：底板和形成在所述底板下方的压电薄膜层，所述采集单元包括多个均匀分布在所述压电薄膜层上方且相互间隔的采集电路，所述采集电路附接于所述底板，
所述采集电路用于采集所述压电薄膜层中与所述采集电路相对应 的位置发生形变时产生的电流信号，
所述处理单元用于根据各个所述采集电路采集到的电流信号计算待测薄膜样品的膜厚。
在根据本发明的一个实施例中，每个所述采集电路包括：第一电极、第二电极、以及用于将电荷转化为电流信号的电荷转化器，所述第一电极和所述电荷转化器电连接且均附接于所述底板，所述第二电极设于所述压电薄膜层的与所述底板相对的表面。
进一步地，所述第一电极和所述电荷转换器可以设置在底板的与所述压电薄膜层相对的表面上。
在另一实施例中，每个所述采集电路包括：第一电极、第二电极、以及用于将电荷转化为电流信号的电荷转化器，所述第一电极、所述第二电极以及所述电荷转换器中的每个设置在所述底板的与所述压电薄膜层相对的表面上，并且所述第一电极和所述第二电极分别与所述电荷转化器电连接。
在根据本发明的另一实施例中，属于同一个所述采集电路的第一电极和电荷转化器集成在一个纳米级芯片上。
根据本发明的又一实施例，所述平面压头还包括：压力传递层，所述压力传递层和所述底板分别固定在所述压电薄膜层的两侧。
根据本发明的又一实施例，所述压力传递层上均匀分布多个压力缓冲孔。
根据本发明的又一实施例，所述压力传递层由聚酰亚胺制成。
另一方面，本发明的实施例提供了一种基于上述膜厚测试装置实现的膜厚测试方法，所述方法包括：
将平面压头按压在待测薄膜样品表面；
采集所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的电流信号；
根据所述电流信号计算所述待测薄膜样品的膜厚。
根据本发明的一个实施例，所述根据所述电流信号计算所述待测薄膜样品的膜厚，包括：
根据所述电流信号计算所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的形变量；
根据所述形变量计算所述待测薄膜样品的膜厚。
根据本发明的另一实施例，所述根据所述电流信号计算所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的形变量，包括：
根据预设的压电薄膜层的形变量与压电薄膜层发生形变时产生的电流信号之间的对应关系，获取所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的形变量。
根据本发明的另一实施例，所述待测薄膜样品包括：有待测薄膜区域和无待测薄膜区域，
所述根据所述形变量计算所述待测薄膜样品的膜厚，包括：
计算所述压电薄膜层在与所述有待测薄膜区域相对应区域中，与各个所述采集电路相对应位置发生形变时产生的第一形变量；
计算所述压电薄膜层在与所述无待测薄膜区域相对应区域中，与各个所述采集电路相对应位置发生形变时产生的第二形变量；
根据所述第一形变量和所述第二形变量之间的差值计算所述待测薄膜样品的膜厚。
根据本发明的又一实施例，所述根据所述第一形变量和所述第二形变量之间的差值计算所述待测薄膜样品的膜厚，包括：
统计多个所述第一形变量的平均值；
统计多个所述第二形变量的平均值；
根据所述多个第一形变量的平均值与所述多个第二形变量的平均值之间的差值计算所述待测薄膜样品的膜厚。
本发明实施例提供的技术方案带来的有益效果是：
使用本发明的实施例提供的膜厚测试装置测量待测薄膜样品的膜厚时，采用带有压电薄膜层的平面压头与待测薄膜样品表面按压接触，由于平面压头与待测薄膜样品的接触面要远大于探针与待测薄膜样品的接触面，使得平面压头不会像探针一样对待测薄膜样品表面造成损伤；而且，该膜厚测试装置还包括采集单元，该采集单元包括多个均匀分布在压电薄膜层上方且相互间隔的采集电路，使得膜厚测试装置能同时采集到压电薄膜层多个位置发生形变时产生的电流信号，进而能同时探测出待测薄膜样品的多个位置的膜厚，而不用像现有的台阶仪一样需要做横向接触式扫描，测试效率更高。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明的一个实施例提供的膜厚测试装置的结构示意图；
图2是本发明的一个实施例提供的平面压头的结构示意图；
图3是本发明的一个实施例提供的底板的结构示意图；
图4是本发明的一个实施例提供的采集电路的结构示意图；
图5是本发明的一个实施例提供的底板的底视图；
图6是本发明的一个实施例提供的压电薄膜层的底视图；
图7是本发明一个实施例提供的电荷转化器的电路图；
图8是本发明另一实施例提供的平面压头的结构示意图；
图9是本发明另一实施例提供的压力传递层的结构示意图；
图10是本发明的一个实施例提供的膜厚测试方法的流程图；
图11是本发明的一个实施例提供的待测薄膜样品的结构示意图；
图12是本发明的一个实施例提供的计算待测薄膜样品的膜厚的方法流程图；
图13是本发明的一个实施例提供的测量待测薄膜样品的膜厚的原理示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
图1提供了根据本发明的一个实施例的膜厚测试装置的结构示意图，参见图1，该装置包括：平面压头1、采集单元2、以及处理单元3，处理单元3和采集单元2电连接。
图2提供了根据本发明的一个实施例的平面压头的结构示意图，参见图2，该平面压头1包括：底板11和形成在底板11下方的压电薄膜层12。
应当能够理解的是，在本文中提到的“下”、“下方”、“上”或“上方”并不意在表示绝对的位置关系，而是为了清楚地描述与附 图相对应的实施例。实际上，用这类词语描述的两个对象之间的位置关系是相对的，而且取决于人们的观看方向。例如，对于当前图2所示的示例，当从纸张的底部到顶部的方向上看过去时，可以认为压电薄膜层12是形成在底板11的下方，但是当从纸张的顶部到底部的方向看过去时，也可以认为压电薄膜层12形成在底板11的上方。
图3提供了根据本发明的一个实施例的形成有采集电路的底板的结构示意图。在一个实施例中，该采集电路可至少包括第一电极和电荷转换器，采集单元2可包括多个这样的采集电路。采集电路可形成在底板11的面向压电薄膜层12一个表面上，因此，当压电薄膜层12与底板11结合时，可以认为多个采集电路分布在压电薄膜层12上。参见图3，在一个实施例中，采集单元2可包括多个均匀分布在压电薄膜层12上方且相互间隔的采集电路21，采集电路21可附接于底板11。例如，采集电路可设置在底板11的与压电薄膜层12相对的表面(即底板11的面向压电薄膜层12的表面)上。
采集电路21用于采集压电薄膜层12中与采集电路21相对应的位置发生形变时产生的电流信号。
处理单元3用于根据各个采集电路21采集到的电流信号计算待测薄膜样品的膜厚。
在实施例中，多个采集电路21可以按照矩阵排列，可以使得采集电路21能更有效地采集到压电薄膜层12各个位置因形变而产生的电流信号。
在本实施例中，该膜厚测试装置测量待测薄膜样品的膜厚时，采用带有压电薄膜层的平面压头与待测薄膜样品表面接触，由于平面压头与待测薄膜样品的接触面要远大于探针与待测薄膜样品的接触面，使得平面压头不会像探针一样对待测薄膜样品表面造成损伤；而且，该膜厚测试装置还包括采集单元，该采集单元包括多个均匀分布在压电薄膜层上且相互间隔的采集电路，使得膜厚测试装置能同时采集到压电薄膜层多个位置发生形变时产生的电流信号，进而能同时探测出待测薄膜样品的多个位置的膜厚，而不用像现有的台阶仪一样需要做横向接触式扫描，测试效率更高。
在本实施例中，底板11可以采用绝缘材料，以避免对压电薄膜层12产生的电流信号的干扰，提高探测的准确性。压电薄膜层12可以采 用聚偏氟乙烯或者氧化锌等材料。
图4提供了根据本发明的一个实施例的采集电路的结构示意图，参见图4，每个采集电路21可包括：第一电极211、第二电极212、以及用于将电荷转化为电流信号的电荷转化器213。
图5提供了根据本发明的一个实施例的底板的底视图，参见图5，第一电极211和电荷转化器213(图5中未标示)电连接且均附接于底板11。例如，在膜厚测试装置中，第一电极211和电荷转换器212二者可以被设置在底板11的与压电薄膜层12相对的表面上，即设置在底板11的面向压电薄膜层12的表面上。
图6提供了根据本发明的一个实施例的压电薄膜层的底视图，参见图6，第二电极212可设置于压电薄膜层12的与底板11相对的表面上。在该实施中，压电薄膜层12上的第二电极212与底板上的第一电极122可以错开一定的位置而避免直接接触，从而可以利用第一电极和第二电极之间的电势差来产生电流信号。例如，可以在底板上设置能够与第二电极相接触的导电金属，该导电金属与第一电极可分别与电荷转换器电连接。
需要说明的是，在该实施例中，虽然在压电薄膜层12的与底板11相对的表面上设有第二电极212，但是由于压电薄膜层12中与采集电路21相对应的位置均设有第二电极212，压电薄膜层12中与采集电路21相对应的位置发生的形变受第二电极212的影响相同，在利用压电薄膜层12形变量的差值计算待测薄膜样品膜厚时，是可以消除第二电极212的影响的，同时，由于第二电极212是间隔设置在压电薄膜层上，对压电薄膜层的形变的产生影响较小，故第二电极212关于膜厚测试装置对待测薄膜样品膜厚的测量的影响很小，甚至可以忽略。
在另一实施例中，每个采集电路可包括第一电极、第二电极、以及用于将电荷转化为电流信号的电荷转化器，第一电极、第二电极以及电荷转换器中的每个可设置在所述底板的与压电薄膜层相对的表面上，并且第一电极和所述第二电极分别与电荷转化器电连接。换句话说，每个采集电路中的第一电极、第二电极以及电荷转换器可以同时设置在底板的与压电薄膜层相对的表面上。同样地，可以利用第一电极和第二电极之间的电势差来产生电流信号。
在替代性的实施例中，每个采集电路中的第一电极和第二电极也 可以分别设于压电薄膜层的两个表面上，即，压电薄膜层的与底板相对的表面以及远离压板的表面。当压电薄膜层受压时，第一电极和第二电极之间形成电势差，该电势差被提供给电荷转换器形成电流信号。
图7提供了根据本发明的一个实施例的电荷转化器的电路图，参见图7，电荷转化器213包括：运算放大器(Operational Amplifier，简称“OPA”)、电容C、以及电阻R。OPA的反相输入端V-与第一电极211连接，OPA的同相输入端V+接地，OPA的反相输入端V-还分别与电容C和电阻R的一端电连接，电容C和电阻R的另一端均与OPA的输出端Vout电连接，OPA的正电源端Vs+和负电源端Vs-分别与电源的正负极电连接。该电荷转化器213除了用于将压电薄膜层12因形变而产生的电荷转化为电流信号外，还会对电流信号进行放大，以便处理单元3识别。
在一个实施例中，属于同一个采集电路21的第一电极211和电荷转化器213可以集成在一个纳米级芯片上。在该情形中，采集电路21的第一电极211与压电薄膜层12接触。相应的，第二电极212的尺寸也可以是纳米级的。
在本实施例中，采集电路21中第一电极211的规格影响该膜厚测试装置的测量精度，当第一电极211为纳米级电极时，该膜厚测试装置的测量精度更高，测量的数值更准确可靠。
图8提供了根据本发明的另一实施例的平面压头的结构示意图，参见图8，与图2所示平面压头不同之处在于，该平面压头1还包括：压力传递层13，该压力传递层13和底板11分别固定在压电薄膜层12的两侧。
在实施例中，压力传递层13和底板11均可以通过均匀涂覆的粘接层(图中未示出)来与压电薄膜层12固定，该粘接层可以采用环氧胶(例如，掺杂有导电剂的环氧胶)。这样可以在不影响压电薄膜层12工作的情况下，使得平面压头1的结构更加简单。
对于没有压力传递层13的情形，压电薄膜层12的形变量范围可能较小，从而可能限制膜厚测试装置所能测量的薄膜厚度。在本实施例中，在压电薄膜层12的一侧增设压力传递层13，当膜厚测试装置测量待测薄膜样品的膜厚时，压力传递层13与待测薄膜样品表面接触，并与压电薄膜层12一起发生形变，使得待测薄膜样品只需要发生较小 的形变时，平面压头1中的压电薄膜层12就能够产生足够的形变，进而使得平面压头1能够适用于测量更大范围的膜厚。
图9提供了根据本发明的一个实施例的压力传递层的结构示意图，参见图9，压力传递层13上可均匀分布多个压力缓冲孔131。
在本实施例中，压力传递层13上均匀分布多个压力缓冲孔131，可以使得压力传递层13的形变更均匀，同时也能使传递给压电薄膜层12的压力更均匀，进而使得膜厚测试装置的测量更准确。
需要说明的是，图9中的压力传递层13仅为结构示意图，并不限制压力缓冲孔131直径的大小和实际的排布方式。
在实施例中，压力传递层13可以由聚酰亚胺制成，以增加压力传递层13的耐用性。
下面简单介绍根据本发明的实施例的膜厚测试装置的工作过程。
首先，准备好经过预处理的待测薄膜样品。在实施例中，预处理待测薄膜样品包括在待测薄膜样品中的将要被测量膜厚的样品部分的相邻位置处制备出无待测薄膜的区域，形成台阶。
然后，将平面压头1垂直按压在待测薄膜样品表面，在预设的测试条件下测量待测薄膜样品的膜厚。具体地，在平面压头1被按压到待测薄膜样品表面后，压电薄膜层12在对应于有待测薄膜区域和无待测薄膜区域的位置产生不同的形变量，采集电路21采集其所在位置的压电薄膜层12发生形变时产生的电流信号，处理单元3根据多个采集电路21采集到的电流信号计算出待测薄膜样品的膜厚(具体计算过程参见下文中的膜厚测试方法)。此外，预设的待测条件可包括：平面压头1每次下降的高度恒定，放置待测薄膜样品的位置处的高度恒定等。
最后，将平面压头1恢复到初始高度，并在相同的测试条件下，重复上述过程，以测量待测薄膜样品表面的不同位置的膜厚。
图10提供了根据本发明的一个实施例的膜厚测试方法的流程图，该方法可以采用包括图2或图8所示的平面压头的膜厚测试装置实现，参见图10，该方法包括：
步骤S21，将平面压头按压在待测薄膜样品表面。
在本实施例中，每次待测薄膜样品的膜厚测试条件可以相同，例如：放置待测薄膜样品的位置处的高度相同，平面压头每次向下运动 的垂直距离也相同，以及平面压头向下运动的初始位置也相同等。
步骤S22，采集压电薄膜层中与各个采集电路相对应位置发生形变时产生的电流信号。
步骤S23，根据电流信号计算待测薄膜样品的膜厚。
在实施例中，采用该膜厚测试方法所测量的待测薄膜样品可以被预处理，在待测薄膜样品中的将要被测量膜厚的样品部分的相邻位置处制备出完全无待测薄膜的区域，形成台阶。
图11提供了根据本发明的实施例的待测薄膜样品的结构示意图，参见图11，待测薄膜样品包括：基板100和生长在基板100上的待测薄膜200，待测薄膜样品在用于膜厚测量之前，可以被预处理，在待测薄膜样品中的将要被测量膜厚的样品部分(有待测薄膜区域202)的相邻位置处制备一块无待测薄膜区域201，相应地，无待测薄膜区域201与有待测薄膜区域202相邻，并形成一个高度差，这个高度差即为待测薄膜样品的膜厚。此外，每个待测薄膜样品所采用的基板100的厚度可以相同。
在实际应用中，该预处理可以采用掩膜镀膜法和腐蚀法，可以与台阶仪所使用的待测薄膜样品形成台阶的方法相同。
图12提供了根据本发明的一个实施例的计算待测薄膜样品的膜厚的方法流程图，参见图12，根据电流信号计算待测薄膜样品的膜厚可以通过如下方式实现：
步骤S231，根据电流信号计算压电薄膜层中与各个采集电路相对应位置发生形变时产生的形变量。
在一个实施例中，步骤S231可以通过如下方式实现：
根据预设的压电薄膜层的形变量与压电薄膜层发生形变时产生的电流信号之间的对应关系，获取压电薄膜层中与各个采集电路相对应位置发生形变时产生的形变量。
在本实施例中，可以在与膜厚测试装置相同的测试条件下，通过有限次实验来获得上述对应关系(即压电薄膜层的形变量与压电薄膜层发生形变时产生的电流信号之间的对应关系)。例如，首先，可以采用多组已知膜厚的薄膜样品，并将带有压电薄膜层的压电平头按压在上述薄膜样品表面；然后，在上述相同的测试条件下，记录压电薄膜层所产生的电流信号；最后，采用曲线拟合方法确定出压电薄膜层 产生的电流信号与压电薄膜层的形变量之间的对应关系(其中，上述已知膜厚即为压电薄膜层的形变量)。
步骤S232，根据上述形变量计算待测薄膜样品的膜厚。
在本实施例中，参照图11，待测薄膜样品包括：有待测薄膜区域202和无待测薄膜区域201，步骤S232可以通过如下方式实现：
计算压电薄膜层在与有待测薄膜区域202相对应区域中，与各个采集电路相对应位置发生形变时产生的第一形变量；
计算压电薄膜层在与无待测薄膜区域201相对应区域中，与各个采集电路相对应位置发生形变时产生的第二形变量；
根据上述第一形变量和第二形变量之间的差值计算待测薄膜样品的膜厚。
进一步地，上述根据第一形变量和第二形变量之间的差值计算待测薄膜样品的膜厚，可以通过如下方式实现：
统计多个第一形变量的平均值；
统计多个第二形变量的平均值；
根据上述多个第一形变量的平均值与上述多个第二形变量的平均值之间的差值计算待测薄膜样品的膜厚。
在本实施例中，通过上述方式，可以更准确的测量出待测薄膜样品的膜厚。
需要说明的是，对于在压电薄膜层下方添加一层压力传递层的情形，在实现步骤S23时，可以通过如下方式实现：
根据电流信号计算压电薄膜层和压力传递层的总形变量；
根据电薄膜层和压力传递层的总形变量计算待测薄膜样品的膜厚。
图13提供了根据本发明的另一实施例的测量待测薄膜样品的膜厚的原理示意图，参见图13，H1为与无待测薄膜区域对应的压电薄膜层和压力传递层的总形变量；H2为与有待测薄膜区域202对应的压电薄膜层和压力传递层的总形变量；待测薄膜样品的膜厚d即为H1与H2之间的差值。
在本实施例中，可以预先设置压电薄膜层和压力传递层的总形变量与压电薄膜层产生的电流信号的对应关系，上述对应关系可以采用与压电薄膜层形变量与压电薄膜层产生的电流信号的对应关系相同的 获取方法来得到，不同之处在于需要将压电薄膜层替换为压电薄膜层和压力传递层。
以上所述仅为本发明的一些实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (13)

  1. 一种膜厚测试装置，该膜厚测试装置包括：
    平面压头(1)；
    采集单元(2)；以及
    与所述采集单元(2)电连接的处理单元(3)，所述平面压头(1)包括底板(11)和形成在所述底板(11)下方的压电薄膜层(12)，
    所述采集单元(2)包括多个均匀分布在所述压电薄膜层(12)上且相互间隔的采集电路(21)，所述采集电路(21)附接于所述底板(11)，
    所述采集电路(21)用于采集所述压电薄膜层(12)中与所述采集电路(21)相对应的位置发生形变时产生的电流信号，
    所述处理单元(3)用于根据各个所述采集电路(21)采集到的电流信号计算待测薄膜样品的膜厚。
  2. 根据权利要求1所述的装置，其中每个所述采集电路(21)包括：第一电极(211)、第二电极(212)、以及用于将电荷转化为电流信号的电荷转化器(213)，所述第一电极(211)和所述电荷转化器(213)电连接且均附接于所述底板(11)，所述第二电极(212)设于所述压电薄膜层(12)的与所述底板(11)相对的表面。
  3. 根据权利要求2所述的装置，其中所述第一电极和所述电荷转换器设置在所述底板(11)的与所述压电薄膜层(12)相对的表面上。
  4. 根据权利要求1所述的装置，其中每个所述采集电路(21)包括：第一电极(211)、第二电极(212)、以及用于将电荷转化为电流信号的电荷转化器(213)，所述第一电极、所述第二电极以及所述电荷转换器中的每个设置在所述底板(11)的与所述压电薄膜层(12)相对的表面上，并且所述第一电极(211)和所述第二电极分别与所述电荷转化器(213)电连接。
  5. 根据权利要求2或4所述的装置，其中属于同一个所述采集电路(21)的第一电极(211)和电荷转化器(213)集成在一个纳米级芯片上。
  6. 根据权利要求1所述的装置，其中所述平面压头(1)还包括：压力传递层(13)，所述压力传递层(13)和所述底板(11)分别固 定在所述压电薄膜层(12)的两侧。
  7. 根据权利要求6所述的装置，其中所述压力传递层(13)上均匀分布多个压力缓冲孔(131)。
  8. 根据权利要求7所述的装置，其中所述压力传递层(13)由聚酰亚胺制成。
  9. 一种基于权利要求1所述的膜厚测试装置实现的膜厚测试方法，其中所述方法包括：
    将所述平面压头按压在待测薄膜样品表面；
    采集所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的电流信号；
    根据所述电流信号计算所述待测薄膜样品的膜厚。
  10. 根据权利要求9所述的方法，其中所述根据所述电流信号计算所述待测薄膜样品的膜厚，包括：
    根据所述电流信号计算所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的形变量；
    根据所述形变量计算所述待测薄膜样品的膜厚。
  11. 根据权利要求10所述的方法，其中所述根据所述电流信号计算所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的形变量，包括：
    根据预设的压电薄膜层的形变量与压电薄膜层发生形变时产生的电流信号之间的对应关系，获取所述压电薄膜层中与各个所述采集电路相对应位置发生形变时产生的形变量。
  12. 根据权利要求10所述的方法，其中所述待测薄膜样品包括：有待测薄膜区域和无待测薄膜区域，
    所述根据所述形变量计算所述待测薄膜样品的膜厚，包括：
    计算所述压电薄膜层在与所述有待测薄膜区域相对应区域中，与各个所述采集电路相对应位置发生形变时产生的第一形变量；
    计算所述压电薄膜层在与所述无待测薄膜区域相对应区域中，与各个所述采集电路相对应位置发生形变时产生的第二形变量；
    根据所述第一形变量和所述第二形变量之间的差值计算所述待测薄膜样品的膜厚。
  13. 根据权利要求12所述的方法，其中所述根据所述第一形变量 和所述第二形变量之间的差值计算所述待测薄膜样品的膜厚，包括：
    统计多个所述第一形变量的平均值；
    统计多个所述第二形变量的平均值；
    根据所述多个第一形变量的平均值与所述多个第二形变量的平均值之间的差值计算所述待测薄膜样品的膜厚。
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