WO2016146200A1 - An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device - Google Patents

An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device Download PDF

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Publication number
WO2016146200A1
WO2016146200A1 PCT/EP2015/055835 EP2015055835W WO2016146200A1 WO 2016146200 A1 WO2016146200 A1 WO 2016146200A1 EP 2015055835 W EP2015055835 W EP 2015055835W WO 2016146200 A1 WO2016146200 A1 WO 2016146200A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
wavelength conversion
semiconductor device
conversion layer
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/055835
Other languages
French (fr)
Inventor
Kah Mun CHOOI
Lay Sin KHOO
Rodello Cadiz Sigalat
Boon Liang Yap
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to PCT/EP2015/055835 priority Critical patent/WO2016146200A1/en
Publication of WO2016146200A1 publication Critical patent/WO2016146200A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • the present invention relates to an optoelectronic semicon ⁇ ductor device according to claim 1 and to a method for pro ⁇ ducing an optoelectronic semiconductor device according to claim 8.
  • An optoelectronic semiconductor device comprises a carrier.
  • An optoelectronic semiconductor chip is arranged on the car ⁇ rier.
  • a molded wavelength conversion layer is arranged on top of an emission face of the optoelectronic semiconductor chip.
  • a molded lens is arranged on top of the wavelength conversion layer.
  • wavelength conversion happens only in the wavelength conversion layer ar- ranged on top of the emission face of the optoelectronic sem ⁇ iconductor chip.
  • Wavelength conversion does not happen in the lens arranged on top of the wavelength conversion layer. Consequently, heat generated during wavelength conversion is on- ly generated in the wavelength conversion layer, not in the lens.
  • this reduces a thermal stress acting on the lens which may reduce a degradation of the lens over time. Furthermore, it may allow for a better heat dissipation from the wavelength conversion layer, which may result in a higher quantum efficiency and a reduced thermal degradation of the wavelength conversion layer.
  • the wavelength conversion layer comprises a matrix material and wavelength conversion particles embedded into the matrix material.
  • the wavelength conversion particles may also be re ⁇ ferred to as a phosphor.
  • this allows for an easy and inexpensive manufacture of the wavelength conversion layer .
  • the lens does not comprise wavelength conversion particles.
  • this avoids a generation of heat in the lens of the optoelectronic semiconductor device during operation of the optoelectronic semiconductor device.
  • the wavelength conversion layer and/or the lens comprise a silicone.
  • this allows for an easy and inex- pensive production of the wavelength conversion layer and/or the lens .
  • the wavelength conversion layer comprises a thickness between 50 ym and 100 ym.
  • this restricts the region in which heat is generated during operation of the optoelec ⁇ tronic semiconductor device to a thin layer which allows for an efficient heat dissipation.
  • the optoelectronic semiconductor chip is at least partially embedded in a layer of reflective material.
  • the layer of re- flective material may for example comprise Ti0 2 .
  • Advanta ⁇ geously, the layer of reflective material may reflect elec ⁇ tromagnetic radiation to prevent an absorption of the elec ⁇ tromagnetic radiation. Electromagnetic radiation reflected by the reflective layer may be emitted by the optoelectronic semiconductor device which may increase the efficiency of the optoelectronic semiconductor device.
  • the optoelectronic semiconductor device it comprises a cavity.
  • the optoelectronic semiconductor chip and the wavelength conversion layer are arranged in the cavity.
  • the cavity may serve as a reflector for collecting electromagnetic radiation emitted by the optoelec ⁇ tronic semiconductor chip and the wavelength conversion layer.
  • the cavity may simplify production of the wavelength conversion layer.
  • a method for producing an optoelectronic semiconductor device comprises steps of providing a carrier, arranging an optoelectronic semiconductor chip on the carrier, producing a wavelength conversion layer on top of an emission face of the optoelectronic semiconductor chip by molding, and producing a lens on top of the wavelength conversion layer by molding.
  • this method allows for producing an optoelec- tronic semiconductor chip in which wavelength conversion only happens in the wavelength conversion layer, not in the lens.
  • Producing the wavelength conversion layer and the lens both by molding allows for an easy and inexpensive manufacture of the optoelectronic semiconductor device.
  • the wavelength conversion layer is produced by transfer molding.
  • this allows for an easy and inexpensive production of the wave- length conversion layer by means of established standard pro ⁇ cedures .
  • the wavelength conversion layer is produced by liquid transfer molding.
  • this allows to produce a plurality of wavelength conversion layers of a plurality of optoelectronic semiconductor devices in parallel, reducing the expenditure of time and money per optoelectronic semiconductor device.
  • the lens is produced by com ⁇ pression molding.
  • this allows for an easy and inexpensive production of the lens by means of established standard technologies.
  • the carrier is provided as a panel comprising a plurality of cavities.
  • the optoelectronic semiconductor chip is arranged in one of the cavities. Advan ⁇ tageously, this allows for a production of a plurality of op- toelectronic semiconductor devices in parallel, reducing the expenditure of time and money per optoelectronic semiconduc ⁇ tor device.
  • the arrangement of the optoelectronic semiconduc ⁇ tor chip in a cavity allows for an easy and precise produc ⁇ tion of the wavelength conversion layer.
  • the cavities are intercon ⁇ nected by channels.
  • the material forming the wavelength con ⁇ version layer flows through the channels during production of the wavelength conversion layer.
  • this allows for a production of a plurality of wavelength conversion layers in parallel, reducing the expenditure per produced wave ⁇ length conversion layer.
  • the method comprises an additional step for embedding the optoelectronic semiconductor chip at least partially in a layer of reflective material.
  • the layer of reflective material may serve to reflect electromagnetic radiation in the optoelectronic semiconductor device.
  • Figure 1 shows a sectional drawing of an optoelectronic semi- conductor device
  • Figure 2 shows a perspective view of a panel
  • Figure 3 shows a perspective view of the panel with optoelec- tronic semiconductor chips and reflective layers arranged in cavities of the panel;
  • Figure 4 shows a perspective view of the panel with wave ⁇ length conversion layers arranged on top of the reflective layers and the optoelectronic semiconductor chips;
  • Figure 5 shows a perspective view of the panel with lenses arranged of top of the wavelength conversion layers; and Figure 6 shows a sectional view of a part of the panel.
  • Figure 1 shows a schematic sectional drawing of an optoelec ⁇ tronic semiconductor device 10.
  • the optoelectronic semicon ⁇ ductor device 10 is designed to emit electromagnetic radia- tion, for example visible light.
  • the optoelectronic semiconductor device 10 comprises a carri ⁇ er 115.
  • An optoelectronic semiconductor chip 200 is arranged on the carrier 115.
  • the optoelectronic semiconductor chip 200 comprises an emission face 210 facing away from the carrier 115.
  • the optoelectronic semiconductor chip 200 may for exam ⁇ ple be a light emitting diode (LED) chip.
  • the optoelectronic semiconductor chip 200 is designed for emitting electromagnetic radiation at its emission face 210.
  • the optoelectronic semiconductor chip 200 may for example be designed for emitting blue or ultraviolet light.
  • the optoelectronic semi ⁇ conductor device 10 comprises a housing 100.
  • the housing 100 may for example comprise a plastic material or a ceramic ma ⁇ terial.
  • a leadframe 110 is embedded in the housing 100.
  • the leadframe 110 comprises an electrically conductive material, for example a metal.
  • the leadframe 110 comprises several sec ⁇ tions which are electrically insulated against each other.
  • the housing 100 comprises a cavity 120 with an opening on an upper side of the housing 100. At a bottom of the cavity 120 a section of the leadframe 110 is exposed and forms the car ⁇ rier 115.
  • the optoelectronic semiconductor chip 200 is ar ⁇ ranged on the carrier 115 in the cavity 120 of the housing 100 of the optoelectronic semiconductor device 10.
  • the optoe- lectronic semiconductor chip 200 is electrically connected to the leadframe 110.
  • the carrier 115 carrying the optoelectronic semiconductor chip 200 may be designed differently.
  • the optoelectronic semiconductor chip 200 of the optoelec ⁇ tronic semiconductor device 10 is embedded in a reflective layer 300 such that side faces of the optoelectronic semicon- ductor chip 200 are partially or completely covered by the material of the reflective layer 300.
  • the reflective layer 300 is arranged on the carrier 115 inside the cavity 120 and partially fills the cavity 120.
  • the emission face 210 of the optoelectronic semiconductor chip 200 is not covered by the reflective layer 300.
  • the emission face 210 may be flush with an upper side of the reflective layer 300.
  • the reflective layer 300 comprises an optically reflective material.
  • the reflective layer 300 may for example comprise a matrix material and optically reflective particles embedded into the matrix material.
  • the matrix material may for example comprise silicone.
  • the reflective particles may for example comprise Ti02-
  • the optoelectronic semiconductor device 10 comprises a wave ⁇ length conversion layer 400 arranged on top of the emission face 210 of the optoelectronic semiconductor chip 200 and on top of the reflective layer 300.
  • the wavelength conversion layer 400 covers the emission face 210 of the optoelectronic semiconductor chip 200.
  • the wavelength conversion layer 400 of the optoelectronic semiconductor device 10 is provided for converting electro ⁇ magnetic radiation emitted by the optoelectronic semiconduc ⁇ tor chip 200 into electromagnetic radiation comprising a dif ⁇ ferent wavelength, for example a larger wavelength.
  • the wavelength conversion layer 400 may for example be designed to convert blue or ultraviolet electromagnetic radiation into orange or yellow light.
  • the wavelength conversion layer 400 may comprise a matrix material 410 and wavelength conversion particles 420 embedded into the matrix material 410.
  • the matrix material 410 may for example comprise a silicone.
  • the wavelength conversion parti ⁇ cles 420 may also be referred to as a phosphor.
  • the wave ⁇ length conversion particles 420 are designed to absorb elec ⁇ tromagnetic radiation emitted by the optoelectronic semicon- ductor chip 200 and emit electromagnetic radiation of a dif ⁇ ferent wavelength.
  • the wavelength conversion layer 400 comprises a thickness 430 measured in a direction perpendicular to the emission face 210 of the optoelectronic semiconductor chip 200.
  • the thick ⁇ ness 430 may for example be between 50 ym and 100 ym.
  • the wavelength conversion layer 400 is arranged in the cavity 120 of the housing 100 of the optoelectronic semiconductor device 10.
  • the wavelength conversion layer 400 does not ex ⁇ tend above the opening of the cavity at the upper side of the housing 100.
  • the optoelectronic semiconductor device 10 further comprises a lens 500.
  • the lens 500 is arranged on top of the wavelength conversion layer 400.
  • the lens 500 serves as an optic compo- nent for shaping the electromagnetic radiation emitted by the optoelectronic semiconductor device 10.
  • the lens 500 may for example be a convex collecting lens, as depicted in Figure 1.
  • the lens 500 comprises an optically transparent material, for example a silicone.
  • the lens 500 does not comprise wavelength conversion particles embedded in the material of the lens 500.
  • a method for producing the optoelectronic semiconductor de- vice 10 will be explained below with reference to Figures 2 to 6.
  • the method allows for a parallel production of a plu ⁇ rality of optoelectronic semiconductor devices 10.
  • the same reference numbers are used for the components of the optoelectronic semiconductor device 10 as in Figure 1.
  • FIG 2 shows a schematic perspective view of a panel 600.
  • the panel 600 comprises a plurality of housings 100 arranged in a two-dimensional grid pattern and integrally connected to each other.
  • the panel 600 may comprise a larger number of housings 100 than is depicted in Figure 2.
  • Each housing 100 comprises a cavity 120 in which sections of the leadframe 110 are exposed and form a carrier 115.
  • the panel 600 comprises a plurality of channels 610 which in ⁇ terconnects the cavities 120 of the housings 100.
  • the cavity 120 of each housing 100 is connected to the four cavities 120 of the four nearest neighbouring housings 100 by four chan- nels 610.
  • the channels 610 are arranged on the upper side of the panel 600 on which also the cavities 120 of the housings 100 are arranged.
  • the cavities 120 are deeper than the channels 610.
  • the panel 600 may be produced by a molding process, for exam ⁇ ple by transfer molding.
  • Figure 3 shows a schematic perspective view of the panel 600 in a processing state that follows the processing state de ⁇ picted in Figure 2.
  • Optoelectronic semiconductor chips 200 have been arranged on the carriers 115 in the cavities 120 of the housings 100. Af- terwards, each optoelectronic semiconductor chip 200 has been partially embedded into a reflective layer 300 such that side faces of the optoelectronic semiconductor chips 200 are par ⁇ tially or entirely covered by the material of the reflective layers 300, while the emission faces 210 of the optoelectron- ic semiconductor chips 200 remain uncovered by the material of the reflective layers 300.
  • the material of the reflective layers 300 may for example be arranged in the cavities 120 by dispensing.
  • Figure 4 shows a perspective view of the panel 600 in a pro ⁇ cessing state that follows the processing state depicted in Figure 3.
  • a wavelength conversion layer 400 has been arranged on top of the emission face 210 of the optoelectronic semiconductor chip 200 and on top of the reflective layer 300 in the cavity 120 of each housing 100.
  • the wavelength conversion layers 400 may have been produced by transfer molding, in particular by liquid transfer molding. During production of the wavelength conversion layers 400, the material forming the wavelength conversion layers 400 may have flown from one cavity 120 to another through the channels 610 of the panel 600.
  • Figure 5 shows a schematic perspective view of the panel 600 in a processing state which follows the processing state depicted in Figure 4.
  • a lens 500 has been produced on top of the wavelength conver ⁇ sion layer 400 of each housing 100.
  • the lenses 500 may have been produced by a molding process, for example by compres ⁇ sion molding. All lenses 500 may have been produced simulta- neously.
  • Figure 6 shows a schematic sectional drawing of a part of the panel 600 in the production state illustrated in Figure 5.
  • the production of the optoelectronic semiconductor devices 10 is completed except for a singulation of the individual opto ⁇ electronic semiconductor devices 10.

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Abstract

An optoelectronic semiconductor device comprises a carrier. An optoelectronic semiconductor chip is arranged on the carrier. A molded wavelength conversion layer is arranged on top of an emission face of the optoelectronic semiconductor chip. A molded lens is arranged on top of the wavelength conversion layer.

Description

Description
An optoelectronic semiconductor device and a method for pro¬ ducing an optoelectronic semiconductor device
The present invention relates to an optoelectronic semicon¬ ductor device according to claim 1 and to a method for pro¬ ducing an optoelectronic semiconductor device according to claim 8.
It is known in the state of the art to provide optoelectronic semiconductor devices with molded optical elements which com¬ prise embedded wavelength conversion particles for converting a wavelength of an electromagnetic radiation emitted by an optoelectronic semiconductor chip of the optoelectronic semi¬ conductor device. In the state of the art the wavelength con¬ version particles are distributed over the entire optical el¬ ement. Heat generated during an operation of such optoelec¬ tronic semiconductor devices may lead to a degradation of such optical elements.
It is an object of the present invention to provide an optoe¬ lectronic semiconductor device. This objective is achieved by an optoelectronic semiconductor device according to claim 1. It is a further object of the present invention to provide a method for producing an optoelectronic semiconductor device. This objective is achieved by a method according to claim 8. Various embodiments are disclosed in the dependent claims. An optoelectronic semiconductor device comprises a carrier. An optoelectronic semiconductor chip is arranged on the car¬ rier. A molded wavelength conversion layer is arranged on top of an emission face of the optoelectronic semiconductor chip. A molded lens is arranged on top of the wavelength conversion layer.
In this optoelectronic semiconductor device, wavelength conversion happens only in the wavelength conversion layer ar- ranged on top of the emission face of the optoelectronic sem¬ iconductor chip. Wavelength conversion does not happen in the lens arranged on top of the wavelength conversion layer. Consequently, heat generated during wavelength conversion is on- ly generated in the wavelength conversion layer, not in the lens. Advantageously, this reduces a thermal stress acting on the lens which may reduce a degradation of the lens over time. Furthermore, it may allow for a better heat dissipation from the wavelength conversion layer, which may result in a higher quantum efficiency and a reduced thermal degradation of the wavelength conversion layer.
In an embodiment of the optoelectronic semiconductor device, the wavelength conversion layer comprises a matrix material and wavelength conversion particles embedded into the matrix material. The wavelength conversion particles may also be re¬ ferred to as a phosphor. Advantageously, this allows for an easy and inexpensive manufacture of the wavelength conversion layer .
In an embodiment of the optoelectronic semiconductor device, the lens does not comprise wavelength conversion particles. Advantageously, this avoids a generation of heat in the lens of the optoelectronic semiconductor device during operation of the optoelectronic semiconductor device.
In an embodiment of the optoelectronic semiconductor device, the wavelength conversion layer and/or the lens comprise a silicone. Advantageously, this allows for an easy and inex- pensive production of the wavelength conversion layer and/or the lens .
In an embodiment of the optoelectronic semiconductor device, the wavelength conversion layer comprises a thickness between 50 ym and 100 ym. Advantageously, this restricts the region in which heat is generated during operation of the optoelec¬ tronic semiconductor device to a thin layer which allows for an efficient heat dissipation. In an embodiment of the optoelectronic semiconductor device, the optoelectronic semiconductor chip is at least partially embedded in a layer of reflective material. The layer of re- flective material may for example comprise Ti02. Advanta¬ geously, the layer of reflective material may reflect elec¬ tromagnetic radiation to prevent an absorption of the elec¬ tromagnetic radiation. Electromagnetic radiation reflected by the reflective layer may be emitted by the optoelectronic semiconductor device which may increase the efficiency of the optoelectronic semiconductor device.
In an embodiment of the optoelectronic semiconductor device it comprises a cavity. The optoelectronic semiconductor chip and the wavelength conversion layer are arranged in the cavity. Advantageously, the cavity may serve as a reflector for collecting electromagnetic radiation emitted by the optoelec¬ tronic semiconductor chip and the wavelength conversion layer. Furthermore, the cavity may simplify production of the wavelength conversion layer.
A method for producing an optoelectronic semiconductor device comprises steps of providing a carrier, arranging an optoelectronic semiconductor chip on the carrier, producing a wavelength conversion layer on top of an emission face of the optoelectronic semiconductor chip by molding, and producing a lens on top of the wavelength conversion layer by molding.
Advantageously, this method allows for producing an optoelec- tronic semiconductor chip in which wavelength conversion only happens in the wavelength conversion layer, not in the lens. Producing the wavelength conversion layer and the lens both by molding allows for an easy and inexpensive manufacture of the optoelectronic semiconductor device.
In an embodiment of the method, the wavelength conversion layer is produced by transfer molding. Advantageously, this allows for an easy and inexpensive production of the wave- length conversion layer by means of established standard pro¬ cedures .
In an embodiment of the method, the wavelength conversion layer is produced by liquid transfer molding. Advantageously, this allows to produce a plurality of wavelength conversion layers of a plurality of optoelectronic semiconductor devices in parallel, reducing the expenditure of time and money per optoelectronic semiconductor device.
In an embodiment of the method, the lens is produced by com¬ pression molding. Advantageously, this allows for an easy and inexpensive production of the lens by means of established standard technologies.
In an embodiment of the method, the carrier is provided as a panel comprising a plurality of cavities. The optoelectronic semiconductor chip is arranged in one of the cavities. Advan¬ tageously, this allows for a production of a plurality of op- toelectronic semiconductor devices in parallel, reducing the expenditure of time and money per optoelectronic semiconduc¬ tor device. The arrangement of the optoelectronic semiconduc¬ tor chip in a cavity allows for an easy and precise produc¬ tion of the wavelength conversion layer.
In an embodiment of the method, the cavities are intercon¬ nected by channels. The material forming the wavelength con¬ version layer flows through the channels during production of the wavelength conversion layer. Advantageously, this allows for a production of a plurality of wavelength conversion layers in parallel, reducing the expenditure per produced wave¬ length conversion layer.
In an embodiment of the method, it comprises an additional step for embedding the optoelectronic semiconductor chip at least partially in a layer of reflective material. The layer of reflective material may serve to reflect electromagnetic radiation in the optoelectronic semiconductor device. The accompanying drawings are included in order to provide a further understanding of the present invention and are incorporated into and constitute a part of the specification. The drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the invention. Other embodiments of the present invention and many of the intended advantages of the present invention will be readily appreciated as they will be better understood by reference to the following detailed description. The ele¬ ments of the drawings are not to scale with regard to each other .
Figure 1 shows a sectional drawing of an optoelectronic semi- conductor device;
Figure 2 shows a perspective view of a panel;
Figure 3 shows a perspective view of the panel with optoelec- tronic semiconductor chips and reflective layers arranged in cavities of the panel;
Figure 4 shows a perspective view of the panel with wave¬ length conversion layers arranged on top of the reflective layers and the optoelectronic semiconductor chips;
Figure 5 shows a perspective view of the panel with lenses arranged of top of the wavelength conversion layers; and Figure 6 shows a sectional view of a part of the panel.
Figure 1 shows a schematic sectional drawing of an optoelec¬ tronic semiconductor device 10. The optoelectronic semicon¬ ductor device 10 is designed to emit electromagnetic radia- tion, for example visible light.
The optoelectronic semiconductor device 10 comprises a carri¬ er 115. An optoelectronic semiconductor chip 200 is arranged on the carrier 115. The optoelectronic semiconductor chip 200 comprises an emission face 210 facing away from the carrier 115. The optoelectronic semiconductor chip 200 may for exam¬ ple be a light emitting diode (LED) chip.
The optoelectronic semiconductor chip 200 is designed for emitting electromagnetic radiation at its emission face 210. The optoelectronic semiconductor chip 200 may for example be designed for emitting blue or ultraviolet light.
In the example depicted in Figure 1, the optoelectronic semi¬ conductor device 10 comprises a housing 100. The housing 100 may for example comprise a plastic material or a ceramic ma¬ terial. A leadframe 110 is embedded in the housing 100. The leadframe 110 comprises an electrically conductive material, for example a metal. The leadframe 110 comprises several sec¬ tions which are electrically insulated against each other.
The housing 100 comprises a cavity 120 with an opening on an upper side of the housing 100. At a bottom of the cavity 120 a section of the leadframe 110 is exposed and forms the car¬ rier 115. The optoelectronic semiconductor chip 200 is ar¬ ranged on the carrier 115 in the cavity 120 of the housing 100 of the optoelectronic semiconductor device 10. The optoe- lectronic semiconductor chip 200 is electrically connected to the leadframe 110.
In alternative embodiments of the optoelectronic semiconduc¬ tor device 10, the carrier 115 carrying the optoelectronic semiconductor chip 200 may be designed differently.
The optoelectronic semiconductor chip 200 of the optoelec¬ tronic semiconductor device 10 is embedded in a reflective layer 300 such that side faces of the optoelectronic semicon- ductor chip 200 are partially or completely covered by the material of the reflective layer 300. The reflective layer 300 is arranged on the carrier 115 inside the cavity 120 and partially fills the cavity 120. The emission face 210 of the optoelectronic semiconductor chip 200 is not covered by the reflective layer 300. The emission face 210 may be flush with an upper side of the reflective layer 300. The reflective layer 300 comprises an optically reflective material. The reflective layer 300 may for example comprise a matrix material and optically reflective particles embedded into the matrix material. The matrix material may for example comprise silicone. The reflective particles may for example comprise Ti02-
The optoelectronic semiconductor device 10 comprises a wave¬ length conversion layer 400 arranged on top of the emission face 210 of the optoelectronic semiconductor chip 200 and on top of the reflective layer 300. The wavelength conversion layer 400 covers the emission face 210 of the optoelectronic semiconductor chip 200.
The wavelength conversion layer 400 of the optoelectronic semiconductor device 10 is provided for converting electro¬ magnetic radiation emitted by the optoelectronic semiconduc¬ tor chip 200 into electromagnetic radiation comprising a dif¬ ferent wavelength, for example a larger wavelength. The wavelength conversion layer 400 may for example be designed to convert blue or ultraviolet electromagnetic radiation into orange or yellow light.
The wavelength conversion layer 400 may comprise a matrix material 410 and wavelength conversion particles 420 embedded into the matrix material 410. The matrix material 410 may for example comprise a silicone. The wavelength conversion parti¬ cles 420 may also be referred to as a phosphor. The wave¬ length conversion particles 420 are designed to absorb elec¬ tromagnetic radiation emitted by the optoelectronic semicon- ductor chip 200 and emit electromagnetic radiation of a dif¬ ferent wavelength. The wavelength conversion layer 400 comprises a thickness 430 measured in a direction perpendicular to the emission face 210 of the optoelectronic semiconductor chip 200. The thick¬ ness 430 may for example be between 50 ym and 100 ym.
The wavelength conversion layer 400 is arranged in the cavity 120 of the housing 100 of the optoelectronic semiconductor device 10. The wavelength conversion layer 400 does not ex¬ tend above the opening of the cavity at the upper side of the housing 100.
The optoelectronic semiconductor device 10 further comprises a lens 500. The lens 500 is arranged on top of the wavelength conversion layer 400. The lens 500 serves as an optic compo- nent for shaping the electromagnetic radiation emitted by the optoelectronic semiconductor device 10. The lens 500 may for example be a convex collecting lens, as depicted in Figure 1.
The lens 500 comprises an optically transparent material, for example a silicone. The lens 500 does not comprise wavelength conversion particles embedded in the material of the lens 500.
A method for producing the optoelectronic semiconductor de- vice 10 will be explained below with reference to Figures 2 to 6. The method allows for a parallel production of a plu¬ rality of optoelectronic semiconductor devices 10. In Figures 2 to 6 the same reference numbers are used for the components of the optoelectronic semiconductor device 10 as in Figure 1.
Figure 2 shows a schematic perspective view of a panel 600. The panel 600 comprises a plurality of housings 100 arranged in a two-dimensional grid pattern and integrally connected to each other. The panel 600 may comprise a larger number of housings 100 than is depicted in Figure 2. Each housing 100 comprises a cavity 120 in which sections of the leadframe 110 are exposed and form a carrier 115. The panel 600 comprises a plurality of channels 610 which in¬ terconnects the cavities 120 of the housings 100. The cavity 120 of each housing 100 is connected to the four cavities 120 of the four nearest neighbouring housings 100 by four chan- nels 610.
The channels 610 are arranged on the upper side of the panel 600 on which also the cavities 120 of the housings 100 are arranged. The cavities 120 are deeper than the channels 610.
The panel 600 may be produced by a molding process, for exam¬ ple by transfer molding.
Figure 3 shows a schematic perspective view of the panel 600 in a processing state that follows the processing state de¬ picted in Figure 2.
Optoelectronic semiconductor chips 200 have been arranged on the carriers 115 in the cavities 120 of the housings 100. Af- terwards, each optoelectronic semiconductor chip 200 has been partially embedded into a reflective layer 300 such that side faces of the optoelectronic semiconductor chips 200 are par¬ tially or entirely covered by the material of the reflective layers 300, while the emission faces 210 of the optoelectron- ic semiconductor chips 200 remain uncovered by the material of the reflective layers 300.
The material of the reflective layers 300 may for example be arranged in the cavities 120 by dispensing.
Figure 4 shows a perspective view of the panel 600 in a pro¬ cessing state that follows the processing state depicted in Figure 3. A wavelength conversion layer 400 has been arranged on top of the emission face 210 of the optoelectronic semiconductor chip 200 and on top of the reflective layer 300 in the cavity 120 of each housing 100. The wavelength conversion layers 400 may have been produced by transfer molding, in particular by liquid transfer molding. During production of the wavelength conversion layers 400, the material forming the wavelength conversion layers 400 may have flown from one cavity 120 to another through the channels 610 of the panel 600.
Figure 5 shows a schematic perspective view of the panel 600 in a processing state which follows the processing state depicted in Figure 4.
A lens 500 has been produced on top of the wavelength conver¬ sion layer 400 of each housing 100. The lenses 500 may have been produced by a molding process, for example by compres¬ sion molding. All lenses 500 may have been produced simulta- neously.
Figure 6 shows a schematic sectional drawing of a part of the panel 600 in the production state illustrated in Figure 5. The production of the optoelectronic semiconductor devices 10 is completed except for a singulation of the individual opto¬ electronic semiconductor devices 10.
While the invention has been described in detail with refer¬ ence to specific embodiments thereof, it will be apparent to one of ordinary skill in the art that various changes and modifications can be made therein without departing from the spirit a scope thereof. Accordingly, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the ap- pendant claims and their equivalence. Reference numbers
10 optoelectronic semiconductor device 100 housing
110 leadframe
115 carrier
120 cavity 200 optoelectronic semiconductor chip
210 emission face
300 reflective layer 400 wavelength conversion layer
410 matrix material
420 wavelength conversion particle
430 thickness 500 lens
600 panel
610 channel

Claims

An optoelectronic semiconductor device (10) comprising a carrier (115),
wherein an optoelectronic semiconductor chip (200) is arranged on the carrier (115),
wherein a molded wavelength conversion layer (400) is arranged on top of an emission face (210) of the optoelec¬ tronic semiconductor chip (200),
wherein a molded lens (500) is arranged on top of the wavelength conversion layer (400).
The optoelectronic semiconductor device (10) of claim 1, wherein the wavelength conversion layer (400) comprises a matrix material (410) and wavelength conversion particles (420) embedded into the matrix material (410) .
The optoelectronic semiconductor device (10) of one of the previous claims,
wherein the lens (500) does not comprise wavelength con¬ version particles (420).
The optoelectronic semiconductor device (10) of one of the previous claims,
wherein the wavelength conversion layer (400) and/or the lens (500) comprise a silicone.
The optoelectronic semiconductor device (10) of one of the previous claims,
wherein the wavelength conversion layer (400) comprises a thickness (430) between 50 ym and 100 ym.
The optoelectronic semiconductor device (10) of one of the previous claims,
wherein the optoelectronic semiconductor chip (200) is at least partially embedded in a layer (300) of reflective material .
7. The optoelectronic semiconductor device (10) of one of the previous claims,
wherein the optoelectronic semiconductor device (10) com¬ prises a cavity (120),
wherein the optoelectronic semiconductor chip (200) and the wavelength conversion layer (400) are arranged in the cavity (120) .
A method for producing an optoelectronic semiconductor device (10),
the method comprising the following steps:
- Providing a carrier (115);
- Arranging an optoelectronic semiconductor chip (200) on the carrier (115);
- Producing a wavelength conversion layer (400) on top of an emission face (210) of the optoelectronic semiconduc¬ tor chip (200) by molding;
- Producing a lens (500) on top of the wavelength conversion layer (400) by molding.
The method of claim 8,
wherein the wavelength conversion layer (400) is produced by transfer molding.
10. The method of any one of claims 8 and 9,
wherein the wavelength conversion layer (400) is produced by liquid transfer molding.
11. The method of any one of claims 8 to 10,
wherein the lens (500) is produced by compression mold¬ ing .
12. The method of any one of claims 8 to 11,
wherein the carrier (115) is provided as a panel (600) comprising a plurality of cavities (120),
wherein the optoelectronic semiconductor chip (200) is arranged in one of the cavities (120) .
13. The method of claim 12,
wherein the cavities (120) are interconnected by channels (610) ,
wherein material forming the wavelength conversion layer (400) flows through the channels (610) during production of the wavelength conversion layer (400) .
14. The method of any one of claims 8 to 13,
wherein the method comprises the following additional step:
- Embedding the optoelectronic semiconductor chip (200) at least partially in a layer (300) of reflective materi¬ al .
PCT/EP2015/055835 2015-03-19 2015-03-19 An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device Ceased WO2016146200A1 (en)

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