WO2016093431A1 - Susceptor regeneration method - Google Patents

Susceptor regeneration method Download PDF

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Publication number
WO2016093431A1
WO2016093431A1 PCT/KR2015/002164 KR2015002164W WO2016093431A1 WO 2016093431 A1 WO2016093431 A1 WO 2016093431A1 KR 2015002164 W KR2015002164 W KR 2015002164W WO 2016093431 A1 WO2016093431 A1 WO 2016093431A1
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susceptor
coating layer
sic
tac coating
layer
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PCT/KR2015/002164
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French (fr)
Korean (ko)
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김정일
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주식회사 티씨케이
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Publication of WO2016093431A1 publication Critical patent/WO2016093431A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System

Definitions

  • the present invention relates to a susceptor regeneration method, and more particularly to a method for regenerating a susceptor for SiC deposition.
  • a susceptor is a means for supporting a substrate while processing the substrate, and a pocket is formed on the upper surface to support one or more substrates in various ways, and a silicon carbide layer on the front surface of the graphite plate.
  • the susceptor of the structure which deposited was used.
  • the separator for supporting a silicon substrate is made of graphite, which is excellent in workability, but in the case of a susceptor for supporting a sapphire substrate or a SiC substrate for LED manufacture, when a graphite susceptor is used due to a relative increase in process temperature. There was a problem that foreign matter occurs in the acceptor.
  • the susceptor for supporting a substrate for manufacturing a conventional LED was used by coating the surface of the susceptor made of graphite with SiC or TaC.
  • Such a conventional susceptor is shown in the applicant's Patent No. 10-1100041 (December 22, 2011, a method of manufacturing a susceptor for LED manufacturing equipment) of the present invention.
  • the graphite base material is used for the workability of the susceptor, and by coating with SiC or TaC to prevent the graphite base material from being exposed, it is possible to prevent the occurrence of foreign matter and shorten the life of the susceptor.
  • the substrate supported by the susceptor is a process of depositing a specific thin film or partially etching the deposited thin film, and the thin film deposited in the deposition process is deposited on the surface of the susceptor as well as the substrate.
  • the susceptor is regenerated by removing the deposit deposited on the surface of the susceptor.
  • the surface of the TaC coating layer SiC is deposited.
  • the physical polishing method uses a polishing apparatus known as a conventional method for regenerating a substrate, or spray dry ice as described in Korean Patent No. 10-0756640 (registered on Sep. 3, 2007, solid jet nozzle and large-capacity solid jet nozzle). Can be used for playback.
  • the TaC coating layer may be damaged, and the TaC coating layer is damaged to expose the underlying graphite base material, thereby causing foreign matter.
  • the problem to be solved by the present invention in view of the above problems, when SiC is deposited on top of the susceptor formed TaC coating layer on the surface of the graphite substrate, SiC can be removed without damaging the TaC coating layer
  • the present invention provides a method of resuscitating a susceptor.
  • another object of the present invention is to provide a susceptor regeneration method that can significantly reduce the time required for regeneration by chemically removing SiC on the TaC coating layer.
  • the susceptor regeneration method of the present invention can remove the SiC layer without damaging the TaC coating layer through heat treatment under the supply conditions of hydrogen or hydrogen-containing gas, thereby preventing the exposure of the graphite base material and the generation of foreign substances due to the TaC coating layer damage. It can work.
  • the present invention has the effect of chemically removing the SiC, it is possible to shorten the time required for regeneration of the susceptor.
  • 1 is an electron micrograph of a susceptor in which SiC is present.
  • FIG. 2 is an electron micrograph of a susceptor from which SiC has been removed through the present invention.
  • FIG. 1 is an electron micrograph of a susceptor in which SiC is present
  • FIG. 2 is an electron micrograph of a susceptor in which SiC is removed through the present invention.
  • the susceptor 10 in the process of depositing SiC on a substrate using a susceptor 10 having a TaC coating layer 12 formed on a surface of the graphite base material 11, the susceptor 10 may be used.
  • the SiC layer 20 is also deposited on the surface of the TaC coating layer 12, which is a surface of the SiC layer 20.
  • the SiC layer 20 deposited on the surface of the susceptor 10 is not easily removed even with an acid or a base solution because its surface is uneven and its chemical resistance is strong.
  • the susceptor 10 In order to regenerate the susceptor 10 in which the SiC layer 20 is deposited on the surface of the TaC coating layer 12, the susceptor 10 is charged to a heat treatment furnace.
  • the heat treatment furnace should be able to exhaust to the treatment device without leakage of the reaction gas.
  • the heat processing furnace shall be able to provide the heat of 2700 degreeC or more at least.
  • the heat treatment furnace is sealed while the susceptor is charged, and a gas containing H 2 or hydrogen is supplied into the heat treatment furnace.
  • the gas containing hydrogen may use NH 3 , HCN, Hydrocarbon, HCl.
  • the supply flow rate of hydrogen or a gas containing hydrogen may vary depending on the capacity of the heat treatment furnace, but SiC reacts with 2H 2 to supply CH 4 and gaseous Si. At this time, since TaC does not react with H 2 , an excess of H 2 may be added.
  • the temperature of the heat treatment furnace is raised to a temperature of 1500 to 2700 °C, the susceptor 10 is heat-treated for 10 to 300 minutes.
  • the temperature raising conditions are to be increased by 1 to 100 °C per minute.
  • the TaC coating layer 12 may be peeled off.
  • the SiC layer 20 reacts with H 2 to vaporize and is removed from the surface of the TaC coating layer 12.
  • the cross section of the state in which the SiC layer 20 was removed is shown in FIG. Since the TaC coating layer 12 does not react with H 2 even in the above process conditions, the SiC layer 20 can be removed without impacting the TaC coating layer 12.
  • the TaC coating layer 12 Since the TaC coating layer 12 is not damaged, the TaC coating layer 12 is maintained even in a subsequent process, thereby preventing the underlying graphite base material 11 from being exposed.
  • the present invention is characterized in that the post-treatment process is not required because the SiC layer 20 can be removed without residues only by the above heat treatment process.
  • the present invention has the industrial applicability that the susceptor using the TaC coating layer can be regenerated by easily removing the foreign SiC layer from the surface of the TaC coating layer through heat treatment.

Abstract

The present invention relates to a susceptor regeneration method comprising heating a susceptor having a TaC coating layer formed thereon to 1,500°C to 2,700°C for 10 to 300 minutes under hydrogen supply conditions to thereby remove an SiC layer from the surface of the TaC coating layer. The present invention is capable of removing the SiC layer through a heat treatment in a hydrogen atmosphere without damaging the TaC coating layer, and thus has the effect of preventing the exposure of a graphite matrix and the occurrence of foreign matter due to damage to the TaC coating layer.

Description

서셉터 재생방법How to Play Susceptor
본 발명은 서셉터 재생방법에 관한 것으로, 더 상세하게는 SiC 증착용 서셉터를 재생하는 방법에 관한 것이다.The present invention relates to a susceptor regeneration method, and more particularly to a method for regenerating a susceptor for SiC deposition.
일반적으로, 서셉터(Succeptor)는 기판을 처리하는 동안 기판을 지지하는 수단이며, 상면에 포켓이 형성되어 하나 또는 다수의 기판을 지지하되 다양한 방식으로 지지하게 되며, 그라파이트판의 전면에 실리콘 카바이드층을 증착한 구조의 서셉터를 사용하였다.In general, a susceptor is a means for supporting a substrate while processing the substrate, and a pocket is formed on the upper surface to support one or more substrates in various ways, and a silicon carbide layer on the front surface of the graphite plate. The susceptor of the structure which deposited was used.
일반적으로 실리콘 기판을 지지하는 세섭터는 가공성이 우수한 그라파이트 재질을 사용하였으나, 엘이디 제조를 위한 사파이어 기판이나 SiC 기판을 지지하는 서셉터의 경우 공정 온도의 상대적인 상승에 의하여 그라파이트 서셉터를 사용하는 경우에는 서셉터에서 이물이 발생하는 문제점이 있었다.In general, the separator for supporting a silicon substrate is made of graphite, which is excellent in workability, but in the case of a susceptor for supporting a sapphire substrate or a SiC substrate for LED manufacture, when a graphite susceptor is used due to a relative increase in process temperature. There was a problem that foreign matter occurs in the acceptor.
이러한 문제점을 감안하여 종래 엘이디 제조용 기판을 지지하는 서셉터는 그라파이트 재질의 서셉터의 표면을 SiC 또는 TaC로 코팅하여 사용하였다. In view of these problems, the susceptor for supporting a substrate for manufacturing a conventional LED was used by coating the surface of the susceptor made of graphite with SiC or TaC.
이와 같은 종래의 서셉터에 대해서는 본 발명의 출원인의 등록특허 10-1100041호(2011년 12월 22일, 엘이디 제조 장비용 서셉터의 제조방법) 등에 나타나 있다.Such a conventional susceptor is shown in the applicant's Patent No. 10-1100041 (December 22, 2011, a method of manufacturing a susceptor for LED manufacturing equipment) of the present invention.
이처럼 서셉터의 가공성을 위하여 그라파이트 모재를 사용하며, 그 그라파이트 모재가 노출되는 것을 방지하기 위하여 SiC나 TaC로 코팅함으로써, 이물의 발생을 방지하고 서셉터의 수명 단축을 방지할 수 있다.In this way, the graphite base material is used for the workability of the susceptor, and by coating with SiC or TaC to prevent the graphite base material from being exposed, it is possible to prevent the occurrence of foreign matter and shorten the life of the susceptor.
서셉터에 의해 지지되는 기판은 특정한 박막이 증착되거나, 증착된 박막을 부분적으로 에칭하는 등의 공정이 진행되며, 증착 공정에서 증착되는 박막이 기판뿐만 아니라 서셉터의 표면에도 증착된다.The substrate supported by the susceptor is a process of depositing a specific thin film or partially etching the deposited thin film, and the thin film deposited in the deposition process is deposited on the surface of the susceptor as well as the substrate.
이처럼 서셉터의 표면에 증착물이 증착되어 그 증착물의 층이 소정의 두께 이상이 되는 경우 온도의 변화 등에 의하여 기판에 증착되는 박막의 균일성 등에 문제가 발생할 수 있다.As described above, when a deposit is deposited on the surface of the susceptor and the layer of the deposit becomes more than a predetermined thickness, problems may occur such as uniformity of the thin film deposited on the substrate due to temperature change.
이를 방지하기 위하여 서셉터의 표면에 증착된 증착물을 제거하여 서셉터를 재생하게 되는데, 그라파이트 모재의 표면에 TaC를 코팅한 서셉터를 사용하여 기판에 SiC를 증착하는 공정의 경우, TaC 코팅층의 표면에 SiC가 증착된다.In order to prevent this, the susceptor is regenerated by removing the deposit deposited on the surface of the susceptor. In the process of depositing SiC on a substrate using a susceptor coated with TaC on the surface of the graphite base material, the surface of the TaC coating layer SiC is deposited.
이처럼 TaC 코팅층의 표면에 SiC가 증착된 경우 서셉터를 재생하기 위해서는 내화학성이 강한 SiC를 제거하기 위해 화학적인 세정방법을 사용할 수 없으며, 물리적으로 SiC를 연마하여 제거한다.As such, when SiC is deposited on the surface of the TaC coating layer, in order to regenerate the susceptor, a chemical cleaning method cannot be used to remove SiC having strong chemical resistance, and the SiC is physically polished and removed.
물리적인 연마방법에는 종래 기판의 재생방법으로 알려진 연마장치를 사용하거나, 등록특허 10-0756640호(2007년 9월 3일 등록, 고체 분사노즐 및 대용량 고체 분사노즐)에 기재된 바와 같이 드라이아이스를 분사하여 재생하는 방법을 사용할 수 있다.The physical polishing method uses a polishing apparatus known as a conventional method for regenerating a substrate, or spray dry ice as described in Korean Patent No. 10-0756640 (registered on Sep. 3, 2007, solid jet nozzle and large-capacity solid jet nozzle). Can be used for playback.
그러나 물리적 연마과정에서 TaC 코팅층에도 물리적 충격이 가해지게 되며, TaC 코팅층이 손상을 입을 수 있으며, 이러한 TaC 코팅층이 손상되어 하부의 그라파이트 모재가 노출되어 이물이 발생하게 되는 문제점이 있었다.However, in the physical polishing process, the physical impact is also applied to the TaC coating layer, the TaC coating layer may be damaged, and the TaC coating layer is damaged to expose the underlying graphite base material, thereby causing foreign matter.
또한 SiC는 그 경도가 높기 때문에 물리적으로 연마하여 서셉터를 재생하는 방법은 재생에 필요한 시간이 매우 많이 소요되는 문제점이 있었으며, 반드시 후처리 공정으로 습식 세정을 해야 하기 때문에 공정 시간이 더 많이 소요되어 생산성이 낮은 문제점이 있었다.In addition, since SiC has a high hardness, the method of regenerating the susceptor by physically polishing it takes a very long time for regeneration, and the process time is longer because the wet cleaning must be performed as a post-treatment process. There was a problem of low productivity.
상기와 같은 문제점을 감안한 본 발명이 해결하고자 하는 과제는, 그라파이트 모재의 표면에 TaC 코팅층이 형성된 서셉터의 상부에 SiC가 증착된 경우 SiC를 TaC 코팅층에 손상을 주지 않고, SiC를 제거할 수 있는 서셉터 재생방법을 제공함에 있다.The problem to be solved by the present invention in view of the above problems, when SiC is deposited on top of the susceptor formed TaC coating layer on the surface of the graphite substrate, SiC can be removed without damaging the TaC coating layer The present invention provides a method of resuscitating a susceptor.
또한 본 발명이 해결하고자 하는 다른 과제는, 화학적으로 상기 TaC 코팅층 상에서 SiC를 제거함으로써, 재생에 소요되는 시간을 대폭 단축할 수 있는 서셉터 재생방법을 제공함에 있다.In addition, another object of the present invention is to provide a susceptor regeneration method that can significantly reduce the time required for regeneration by chemically removing SiC on the TaC coating layer.
상기와 같은 과제를 해결하기 위한 본 발명 서셉터 재생방법은, TaC 코팅층이 형성된 서셉터를 수소 또는 수소가 포함된 가스의 공급 조건에서 1500 내지 2700℃로 10 내지 300분간 가열하여 상기 TaC 코팅층의 표면에서 SiC층을 제거하는 것을 특징으로 한다.In the susceptor regeneration method of the present invention for solving the above problems, the surface of the TaC coating layer by heating the susceptor on which the TaC coating layer is formed at 1500 to 2700 ℃ for 10 to 300 minutes under the supply conditions of hydrogen or a gas containing hydrogen It is characterized in that the SiC layer is removed from.
본 발명 서셉터 재생방법은 수소 또는 수소가 포함된 가스의 공급조건에서 열처리를 통해 TaC 코팅층에 손상을 주지 않고 SiC층을 제거할 수 있어, TaC 코팅층 손상에 의한 그라파이트 모재의 노출과 이물 발생을 방지할 수 있는 효과가 있다.The susceptor regeneration method of the present invention can remove the SiC layer without damaging the TaC coating layer through heat treatment under the supply conditions of hydrogen or hydrogen-containing gas, thereby preventing the exposure of the graphite base material and the generation of foreign substances due to the TaC coating layer damage. It can work.
또한 본 발명은 화학적으로 SiC를 제거하여, 서셉터의 재생에 필요한 시간을 단축할 수 있는 효과가 있다.In addition, the present invention has the effect of chemically removing the SiC, it is possible to shorten the time required for regeneration of the susceptor.
도 1은 SiC가 존재하는 서셉터의 전자현미경 사진이다.1 is an electron micrograph of a susceptor in which SiC is present.
도 2는 본 발명을 통해 SiC가 제거된 서셉터의 전자현미경 사진이다.2 is an electron micrograph of a susceptor from which SiC has been removed through the present invention.
*부호의 설명** Description of the sign *
10:서셉터 11:그라파이트 모재10: Susceptor 11: graphite base material
12:TaC 코팅층 20:SiC층 12: TaC coating layer 20: SiC layer
이하, 본 발명 서셉터 재생방법에 대하여 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, the susceptor reproduction method of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 SiC가 존재하는 서셉터의 전자현미경 사진이고, 도 2는 본 발명을 통해 SiC가 제거된 서셉터의 전자현미경 사진이다.1 is an electron micrograph of a susceptor in which SiC is present, and FIG. 2 is an electron micrograph of a susceptor in which SiC is removed through the present invention.
도 1과 도 2를 각각 참조하면, 본 발명은 그라파이트 모재(11)의 표면에 TaC코팅층(12)이 형성된 서셉터(10)를 이용하여 기판에 SiC를 증착하는 과정에서, 서셉터(10)의 표면인 TaC 코팅층(12)의 표면에도 SiC층(20)이 증착되며, SiC층(20)을 열처리를 통해 제거한다.1 and 2, in the process of depositing SiC on a substrate using a susceptor 10 having a TaC coating layer 12 formed on a surface of the graphite base material 11, the susceptor 10 may be used. The SiC layer 20 is also deposited on the surface of the TaC coating layer 12, which is a surface of the SiC layer 20.
상기 도 1에서 알 수 있는 바와 같이 서셉터(10)의 표면에 증착되어진 SiC층(20)은 표면이 불균일하며, 내화학성이 강하기 때문에 산이나 염기 용액으로도 제거가 용이하지 않다.As can be seen in FIG. 1, the SiC layer 20 deposited on the surface of the susceptor 10 is not easily removed even with an acid or a base solution because its surface is uneven and its chemical resistance is strong.
이와 같이 TaC 코팅층(12)의 표면에 SiC층(20)이 증착된 서셉터(10)를 재생하기 위하여, 상기 서셉터(10)를 열처리로에 장입한다.In order to regenerate the susceptor 10 in which the SiC layer 20 is deposited on the surface of the TaC coating layer 12, the susceptor 10 is charged to a heat treatment furnace.
이때 열처리로는 반응가스의 누설 없이 처리장치로 배기할 수 있는 것이어야 한다. 또한 열처리로는 적어도 2700℃ 이상의 열을 제공할 수 있는 것으로 한다.At this time, the heat treatment furnace should be able to exhaust to the treatment device without leakage of the reaction gas. In addition, the heat processing furnace shall be able to provide the heat of 2700 degreeC or more at least.
상기 서셉터가 장입된 상태에서 열처리로를 밀폐하고, 열처리로의 내부에 H2 또는 수소를 포함한 가스를 공급한다. 이때 수소를 포함하는 가스는 NH3, HCN, Hydrocarbon, HCl을 사용할 수 있다.The heat treatment furnace is sealed while the susceptor is charged, and a gas containing H 2 or hydrogen is supplied into the heat treatment furnace. At this time, the gas containing hydrogen may use NH 3 , HCN, Hydrocarbon, HCl.
수소 또는 수소를 포함한 가스의 공급유량은 열처리로의 용량에 따라 차이가 있을 수 있으나, SiC는 2H2와 반응하여 CH4와 기상의 Si가 생성되기 적당하도록 공급한다. 이때 TaC는 H2와는 반응하지 않기 때문에 과량의 H2를 투입할 수 있다.The supply flow rate of hydrogen or a gas containing hydrogen may vary depending on the capacity of the heat treatment furnace, but SiC reacts with 2H 2 to supply CH 4 and gaseous Si. At this time, since TaC does not react with H 2 , an excess of H 2 may be added.
특히 SiC 내 C 원자수의 2~16 배의 H 원자수에 해당하도록 공급하는 것이 바람직하다. It is especially preferable to supply so that it may correspond to 2-16 times the number of H atoms of C atoms in SiC.
그 다음, 상기 열처리로의 온도를 1500 내지 2700℃의 온도로 승온시켜, 상기 서셉터(10)를 10 내지 300분간 열처리하게 된다.Then, the temperature of the heat treatment furnace is raised to a temperature of 1500 to 2700 ℃, the susceptor 10 is heat-treated for 10 to 300 minutes.
이때 승온 조건은 분당 1 내지 100℃씩 승온하는 것으로 한다. 분당 100℃를 초과하는 경우 TaC 코팅층(12)의 박리가 될 수 있다.In this case, the temperature raising conditions are to be increased by 1 to 100 ℃ per minute. When the temperature exceeds 100 ° C. per minute, the TaC coating layer 12 may be peeled off.
상기의 온도에서 SiC층(20)은 H2와 반응하여 기화하여 상기 TaC 코팅층(12)의 표면으로부터 제거된다. At this temperature, the SiC layer 20 reacts with H 2 to vaporize and is removed from the surface of the TaC coating layer 12.
이처럼 SiC층(20)이 제거된 상태의 단면을 도 2에 도시하였다. 상기 TaC 코팅층(12)은 상기의 공정 조건에도 H2와 반응하지 않기 때문에, TaC 코팅층(12)에는 충격을 주지 않으면서 SiC층(20)을 제거할 수 있게 된다.Thus, the cross section of the state in which the SiC layer 20 was removed is shown in FIG. Since the TaC coating layer 12 does not react with H 2 even in the above process conditions, the SiC layer 20 can be removed without impacting the TaC coating layer 12.
상기 TaC 코팅층(12)이 손상되지 않기 때문에 이후의 공정에서도 TaC 코팅층(12)이 유지되어, 하부의 그라파이트 모재(11)가 노출되는 것을 방지할 수 있게 된다.Since the TaC coating layer 12 is not damaged, the TaC coating layer 12 is maintained even in a subsequent process, thereby preventing the underlying graphite base material 11 from being exposed.
또한 본 발명은 위의 열처리 공정만으로 SiC층(20)을 잔류물 없이 제거할 수 있기 때문에 후처리 공정이 요구되지 않는 특징이 있다.In addition, the present invention is characterized in that the post-treatment process is not required because the SiC layer 20 can be removed without residues only by the above heat treatment process.
본 발명은 상기 실시예에 한정되지 않고 본 발명의 기술적 요지를 벗어나지 아니하는 범위 내에서 다양하게 수정, 변형되어 실시될 수 있음은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 있어서 자명한 것이다.It will be apparent to those skilled in the art that the present invention is not limited to the above embodiments and may be variously modified and modified without departing from the technical spirit of the present invention. will be.
본 발명은 열처리를 통해 TaC 코팅층의 표면에서 이물인 SiC층을 쉽게 제거하여, TaC 코팅층을 사용하는 서셉터를 재생할 수 있는 것으로 산업상 이용 가능성이 있다.The present invention has the industrial applicability that the susceptor using the TaC coating layer can be regenerated by easily removing the foreign SiC layer from the surface of the TaC coating layer through heat treatment.

Claims (3)

  1. TaC 코팅층이 형성된 서셉터를 수소 또는 수소가 포함된 가스의 공급 조건에서 1500 내지 2700℃로 10 내지 300분간 가열하여 상기 TaC 코팅층의 표면에서 SiC층을 제거하는 것을 특징으로 하는 서셉터 재생방법.Susceptor regeneration method characterized in that to remove the SiC layer from the surface of the TaC coating layer by heating the susceptor on which the TaC coating layer is formed at 1500 to 2700 ℃ for 10 to 300 minutes under the supply conditions of hydrogen or a gas containing hydrogen.
  2. 제1항에 있어서, The method of claim 1,
    상기 수소는, 상기 SiC층의 C 원자수의 2~16 배의 H 원자수가 되도록 공급하는 것을 특징으로 하는 서셉터 재생방법.The hydrogen is supplied to the H atom number 2 to 16 times the number of C atoms of the SiC layer, characterized in that the susceptor regeneration method.
  3. 제2항에 있어서,The method of claim 2,
    상기 가열은,The heating is
    1~100℃/min의 승온 조건으로 가열하는 것을 특징으로 하는 서셉터 재생방법.Susceptor regeneration method characterized in that the heating at a temperature rising condition of 1 ~ 100 ℃ / min.
PCT/KR2015/002164 2014-12-12 2015-03-06 Susceptor regeneration method WO2016093431A1 (en)

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JP2005197534A (en) * 2004-01-08 2005-07-21 Shin Etsu Handotai Co Ltd Surface protection film formation method for repairing tool for heat treatment and repairing tool for heat treatment
JP2005276891A (en) * 2004-03-23 2005-10-06 Ngk Insulators Ltd Ceramic susceptor and cleaning method thereof
JP2012028385A (en) * 2010-07-20 2012-02-09 Nuflare Technology Inc Semiconductor manufacturing apparatus and cleaning method of susceptor
JP2013207057A (en) * 2012-03-28 2013-10-07 Hitachi Kokusai Electric Inc Substrate processing apparatus, substrate manufacturing method, and substrate processing apparatus cleaning method

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JP5697246B2 (en) * 2011-04-13 2015-04-08 イビデン株式会社 Epitaxial growth susceptor, epitaxial growth apparatus using the same, and epitaxial growth method using the same
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EP0418592A1 (en) * 1989-08-25 1991-03-27 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
JP2005197534A (en) * 2004-01-08 2005-07-21 Shin Etsu Handotai Co Ltd Surface protection film formation method for repairing tool for heat treatment and repairing tool for heat treatment
JP2005276891A (en) * 2004-03-23 2005-10-06 Ngk Insulators Ltd Ceramic susceptor and cleaning method thereof
JP2012028385A (en) * 2010-07-20 2012-02-09 Nuflare Technology Inc Semiconductor manufacturing apparatus and cleaning method of susceptor
JP2013207057A (en) * 2012-03-28 2013-10-07 Hitachi Kokusai Electric Inc Substrate processing apparatus, substrate manufacturing method, and substrate processing apparatus cleaning method

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