WO2016046957A1 - Semiconductor device manufacturing method, substrate processing apparatus, and recording medium - Google Patents

Abstract

[Problem] To provide a semiconductor device manufacturing method, and a substrate treatment apparatus or the like, whereby, in substrate heat treatment, specifically in reflow treatment, heat treatment can be performed while eliminating unneeded heating and considering a temperature increase/reduction speed and thermal uniformity. [Solution] At the time of heating a substrate using a heater, the present invention supplies a plurality of kinds of gases to a substrate treatment chamber, and controls the temperature of the substrate by changing the flow rates and/or mixing ratio of the plurality of kinds of gases.

Description

Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

The present invention relates to a method for manufacturing a semiconductor device, a substrate processing apparatus, and the like, and more particularly to solder reflow processing.

In recent years, there has been a demand for miniaturization of semiconductor device packages in order to achieve highly integrated mounting of semiconductor devices. For this reason, the use of convex solder terminals called bumps has become the mainstream for connecting electrodes of semiconductor devices and lead frames. By using the bumps, the semiconductor device and the lead frame can be connected to each other, and the space in the plane direction of the mounting substrate can be saved. Bumps are not only used when stacking a semiconductor device and a lead frame, but also at three-dimensional mounting of a semiconductor device using a through-silicon via (TSV), which has been actively studied in recent years. Used.

Generally, bumps are formed by depositing solder on the electrodes using a paste printing method or a plating method after electrodes are formed on the semiconductor device. However, there are fine irregularities on the solder surface deposited by the paste printing method and plating method, and if the solder is connected as it is, bubbles will be taken into the solder and the connection strength and resistance will be reduced. End up. In order to prevent this, a heat treatment is required to smooth the solder surface by heating the solder to the melting point or higher in advance and melting it once.

In addition, the surface of the solder is usually protected by a natural oxide film, and it is necessary to reduce and remove the natural oxide film on the surface in order to melt and reform by heat treatment. A series of heat treatments for performing reduction / removal and melting / re-formation of the surface natural oxide film is referred to as reflow treatment.

Various methods for reflow are disclosed. For example, Patent Document 1 discloses a method of removing a natural oxide film of solder using plasma and a method of melting solder by radiant heat from a heater.

JP2012-9597

In the reflow process, it is essential to heat the solder on the substrate to the melting point or higher, but it has been found that when it is excessively heated, an undesirable alloying reaction occurs in the solder. Furthermore, it is inevitable that the heated substrate is subjected to stress due to heat. When many substrates are stacked by three-dimensional mounting, the influence of this thermal stress cannot be ignored.

In addition, in a substrate adopting the TSV technology, the silicon substrate may be ground and thinned and bonded with a support glass and an adhesive. In this case, it is necessary not only to peel off the silicon substrate and the support glass due to thermal stress, but also to pay attention to the heat resistant temperature of the adhesive. For the above reasons, temperature control is extremely important in reflow processing, and thermal stress applied to the substrate is minimized by controlling the temperature so that it reaches the desired temperature while paying attention to thermal uniformity and temperature rise / fall rate. It is required to do. It is desirable to control the temperature so that the substrate temperature is quickly lowered after the reflow process is completed while the substrate temperature is rapidly raised to the melting point of the solder to prevent unnecessary heating. In the future, it is considered that the importance will further increase as the number of substrate layers and circuits become finer.

One of the objects of the present invention is to provide a technique capable of suitably controlling the temperature and thermal stress of a processing substrate.

According to one embodiment of the present invention, a step of placing a substrate on a substrate support mechanism provided in a processing chamber for processing a substrate, and introducing a plurality of types of gases into the processing chamber are provided in the processing chamber. A step of supplying the plurality of types of gases to a space between the heater and the substrate, and a step of heating the substrate by the heater. In the step of heating the substrate by the heater, There is provided a method for manufacturing a semiconductor device, wherein the temperature of the substrate is controlled by changing at least one of flow rates and mixing ratios of a plurality of types of gases introduced into the processing chamber.

According to another aspect of the present invention, a processing chamber for processing a substrate, a substrate support mechanism provided in the processing chamber for supporting the substrate, a heater provided in the processing chamber for heating the substrate, A plurality of gas supply units for supplying different types of gases to the processing chamber, an exhaust unit for exhausting the atmosphere in the processing chamber, and the substrate supported by the substrate support mechanism when the heater is heated by the heater, There is provided a substrate processing apparatus including a control unit that controls a temperature of the substrate by changing at least one of a flow rate and a mixing ratio of a gas supplied from each of a plurality of gas supply units.

According to another aspect of the present invention, a procedure for placing a substrate on a substrate support mechanism provided in a processing chamber for processing a substrate, and introducing a plurality of types of gases into the processing chamber, A program for causing a computer to execute a procedure for supplying the plurality of types of gases to a space between a provided heater and the substrate, and a procedure for heating the substrate by the heater. In the procedure for heating the substrate, a program for controlling the temperature of the substrate by changing at least one of a flow rate and a mixing ratio of a plurality of types of gases introduced into the processing chamber, or a computer readable recording the program Recording medium is provided.

According to the semiconductor device manufacturing method, the substrate processing apparatus, and the like according to the present invention, it is possible to suitably control the temperature and thermal stress of the processing substrate.

It is a schematic cross-sectional view for demonstrating the substrate processing apparatus in embodiment of this invention. It is a 1st schematic longitudinal cross-sectional view of the substrate processing apparatus in embodiment of this invention shown in FIG. It is a 2nd schematic longitudinal cross-sectional view of the substrate processing apparatus in embodiment of this invention shown in FIG. It is sectional drawing which shows the process chamber used for the substrate processing apparatus in embodiment of this invention shown in FIG. It is a schematic block diagram which shows the structure of the controller of the substrate processing apparatus in embodiment of this invention. (A)-(c) is a schematic diagram which shows the state of the electrode formed on the wafer, and the solder bump formed in the upper part. It is a flowchart which shows the procedure of the reflow process in embodiment of this invention. It is a timing chart of various process conditions in pattern 1 of reflow processing in an embodiment of the present invention. It is a timing chart of various process conditions in pattern 2 of reflow processing in an embodiment of the present invention. It is a timing chart of various process conditions in pattern 3 of reflow processing in an embodiment of the present invention.

Embodiments of the present invention will be described below in detail with reference to the drawings.

(1) Configuration of Substrate Processing Apparatus First, the configuration of the substrate processing apparatus in the present embodiment will be described. FIG. 1 is a schematic cross-sectional view for explaining a substrate processing apparatus 10 in an embodiment of the present invention, and FIGS. 2 and 3 are schematic longitudinal cross-sectional views for explaining a substrate processing apparatus in an embodiment of the present invention. FIG. As shown in FIGS. 1 and 2, the substrate processing apparatus 10 includes a cassette transfer unit 100, a load lock chamber unit 200, a transfer module unit 300, and a process chamber unit 400 that processes a substrate.

(Overall configuration of substrate processing equipment)
The cassette transfer unit 100 includes cassette transfer units 110 and 120 that are used as first transfer units. The cassette transfer units 110 and 120 each include a cassette table 111 on which a cassette 500 that supports a wafer 600 that is used as a substrate is placed. 121, Y- axis assemblies 112 and 122, and Z-axis assemblies 113 and 123 for operating the Y-axis 130 and the Z-axis 140 of the cassette tables 111 and 121, respectively.

The load lock chamber unit 200 receives the wafers 600 from the load lock chambers 250 and 260 and the cassettes 500 placed on the cassette tables 111 and 121, and holds the wafers 600 in the load lock chambers 250 and 260, respectively. 210 and 220 are provided. Each of the buffer units 210 and 220 includes buffer finger assemblies 211 and 221 and index assemblies 212 and 222 below the buffer finger assemblies 211 and 221. The buffer finger assembly 211 (221) and the index assembly 212 (222) below the buffer finger assembly 211 (221) are rotated simultaneously by the θ axis 214 (224).

The transfer module unit 300 includes a transfer module 310 used as a transfer chamber, and the above-described load lock chambers 250 and 260 are attached to the transfer module 310 via gate valves 311 and 312. The transfer module 310 is provided with a vacuum arm robot unit 320 used as a second transfer unit.

The process chamber unit 400 includes process chambers 410 and 420 and plasma generation chambers 430 and 440 provided on the upper part thereof. The plasma generation chambers 430 and 440 are spaces in which a gas supplied into reaction vessels 431 and 441 described later is brought into a plasma state by a plasma generation unit described later. In this embodiment, the generated plasma is a mixed plasma of oxygen and hydrogen, or a mixed plasma of oxygen and nitrogen. The process chambers 410 and 420 are attached to the transfer module 310 via gate valves 313 and 314.

The process chambers 410 and 420 include susceptor tables 411 and 421 that are used as a placement unit for placing the wafer 600 thereon. Lifter pins 413 and 423 are provided through the susceptor tables 411 and 421, respectively. The lifter pins 413 move up and down in the Z- axis 412 and 422 directions, respectively.

The plasma generation chambers 430 and 440 are provided with reaction vessels 431 and 441 used as reaction tubes, respectively. Resonant coils 432 and 442 are provided outside the reaction vessels 431 and 441. A high-frequency power is applied to the resonance coils 432 and 442 to change the gas introduced from the gas inlets 433 and 443 into a plasma state, and the plasma is used on the wafer 600 placed on the susceptor tables 411 and 421. Reduction / removal processing of the formed solder bump surface is performed.

In the substrate processing apparatus 10 configured as described above, the wafer 600 is transferred from the cassette table 111 (121) to the load lock chamber 250 (260). At this time, first, as shown in FIGS. 2 and 3, the cassette 500 is mounted on the cassette table 111 (121), and the Z-axis 140 moves downward. The Y-axis 130 of the buffer finger assembly 211 (221) moves in the direction of the cassette 500 with the Z-axis 140 on the bottom. By operation of the I-axis 230, 25 wafers 600 are received from the cassette 500 by the buffer fingers 213 (223) of the buffer finger assembly 211 (221). In the received state, the Y-axis 130 is lowered to the original position.

In the load lock chamber 250 (260), the wafer 600 held in the load lock chamber 250 (260) by the buffer unit 210 (220) is mounted on the finger 321 of the vacuum arm robot unit 320. The vacuum arm robot unit 320 is rotated in the θ-axis 325 direction, the fingers are further extended in the Y-axis 326 direction, and transferred onto the susceptor table 411 (421) in the process chamber 410 (420).

(Process chamber)
FIG. 4 shows details of the process chamber 410. The process chamber 420 described above has the same configuration as the process chamber 410. As shown in FIG. 4, the process chamber 410 includes a plasma generation chamber 430 for generating plasma, a processing chamber 445 for accommodating a wafer 600 such as a semiconductor substrate, and a plasma generation chamber 430 (particularly, a resonance coil 432). A high frequency power supply 444 for supplying power and a frequency matching unit 446 for controlling the oscillation frequency of the high frequency power supply 444 are provided. For example, the plasma generation chamber 430 is disposed above a horizontal base plate 448 as a gantry, and the processing chamber 445 is disposed below the base plate 448. The outer shield 452 and the resonance coil 432 that are electrically grounded constitute a spiral resonator.

The processing chamber 445 is provided continuously with the plasma generation chamber 430 and is used as a processing chamber having a susceptor 459 described later.

The plasma generation chamber 430 includes the above-described reaction vessel 431 that is configured to be depressurized and to which a reaction gas for plasma is supplied. On the outer periphery of the reaction vessel 431, a resonance coil 432 wound around the reaction vessel 431 and an outer shield 452 disposed on the outer periphery of the resonance coil 432 and electrically grounded are provided.

The reaction vessel 431 is usually formed in a cylindrical shape with high-purity quartz glass or ceramics, and in this embodiment, one made of quartz is used. The reaction vessel 431 is usually arranged so that its axis is vertical, and the upper and lower ends are hermetically sealed by the top plate 454 and the processing chamber 445. A susceptor 459 supported by a plurality of (for example, four) support columns 461 is provided on the bottom surface of the processing chamber 445 below the reaction vessel 431. The susceptor 459 heats the susceptor table 411 and the wafer 600 on the susceptor. A heater 463 which is a substrate heating unit is provided.

An exhaust plate 465 is disposed below the susceptor 459. The exhaust plate 465 is supported by the bottom substrate 469 via the guide shaft 467, and the bottom substrate 469 is airtightly provided on the lower surface of the processing chamber 445. An elevating board 471 is provided to move up and down with a guide shaft 467 as a guide. The lift board 471 supports at least three lifter pins 413.

The lifter pin 413 passes through the susceptor 459. A lifter pin support portion 414 that supports the wafer 600 is provided on the top of the lifter pin 413. The lifter pin support portion 414 extends in the center direction of the susceptor 459. By raising and lowering the lifter pins 413, the wafer 600 supported by the lifter pin support portions 414 can be placed on the susceptor table 411 or supported at a predetermined distance from the susceptor table 411. A lift shaft 473 of a lift drive unit (not shown) is connected to the lift substrate 471 on the bottom substrate 469. The lift drive unit moves the lift shaft 473 up and down, so that the lifter pin support portion 414 moves up and down via the lift substrate 471 and the lifter pin 413.

(Exhaust part)
A cylindrical baffle ring 458 is provided between the susceptor 459 and the exhaust plate 465. A first exhaust chamber 474 is formed by the baffle ring 458, the susceptor 459, and the exhaust plate 465. The cylindrical baffle ring 458 has a large number of air holes uniformly provided on the side surface of the cylinder. Therefore, the first exhaust chamber 474 is partitioned from the processing chamber 445 and communicates with the processing chamber 445 through a vent hole.

An exhaust communication hole 475 is provided at the center of the exhaust plate 465. The first exhaust chamber and the second exhaust chamber 476 communicate with each other through the exhaust communication hole 475. An exhaust pipe 480 communicates with the second exhaust chamber 476, and an exhaust device 479 is provided in the exhaust pipe 480. The exhaust device 479 includes a pressure adjusting mechanism such as an APC (Automatic Pressure Controller), an on-off valve, a vacuum pump, and the like.

(Gas supply part)
In order to supply N ₂ (nitrogen) gas, which is the first gas, and H ₂ (hydrogen) gas, which is the second gas, to the top plate 454 at the top of the reaction vessel 431 from the gas supply equipment not shown in the drawing, respectively. The first gas supply pipe 455 and the second gas supply pipe 456 are attached to the gas introduction port 433. The first gas supply pipe 455 is provided with a mass flow controller 477 and an on-off valve 478 which are flow rate control units. For example, the gas supply amount can be controlled by controlling with a controller 700 described later. The first gas supply pipe 455, the mass flow controller 477, and the on-off valve 478 together constitute a first gas supply unit 490a. The first gas supply unit 490 a supplies N ₂ gas, which is the first gas supplied from the first gas supply source of the gas supply facility, into the reaction vessel 431. The first gas supply source may be included in the first gas supply unit.

The second gas supply pipe 456 is also provided with a mass flow controller 483 and an on-off valve 484, which are also flow rate control units, and the gas supply amount can be controlled by controlling the controller 700, which will be described later, for example. The second gas supply pipe 456, the mass flow controller 483, and the on-off valve 484 together constitute a second gas supply unit 490b. The second gas supply unit 490 b supplies H ₂ gas, which is the second gas supplied from the second gas supply source of the gas supply facility, into the reaction vessel 431. Note that the second gas supply source may be included in the second gas supply unit 490b. The first gas supply unit 490a and the second gas supply unit 490b are combined to constitute the gas supply unit 490.

In the present embodiment, the first gas supply pipe 455 and the second gas supply pipe 456 are respectively attached to the gas inlet 433 and configured to supply the respective gases to the reaction vessel 431. By connecting the first gas supply pipe 455 and the second gas supply pipe 456 in the upstream portion from the port 433, a mixed gas of N ₂ gas and H ₂ gas is supplied from the gas introduction port 433. Also good.

In this embodiment, N ₂ gas is supplied as the first gas and H ₂ gas is supplied as the _second gas from the first gas supply unit and the second gas supply unit, respectively. These are not limited to two types, and may be three or more types. In that case, in addition to the first gas supply unit and the second gas supply unit, third and fourth gas supply units are further provided.

Also, in the reaction vessel 431, a baffle plate 460 made of quartz is provided in a substantially disc shape for allowing the reaction gas to flow along the inner wall of the reaction vessel 431. The baffle plate 460 may be made of ceramics. In addition, the pressure of the atmosphere in the reaction vessel 431 can be adjusted by adjusting the supply amount and the exhaust amount by the flow rate control unit and the exhaust device 479.

(Plasma generator)
Since the resonance coil 432 wound around the reaction vessel 431 forms a standing wave having a predetermined wavelength, the winding diameter, the winding pitch, and the number of turns are set so as to resonate in a constant wavelength mode. That is, the electrical length of the resonance coil 432 corresponds to an integral multiple (1 times, 2 times,...), Half wavelength, or ¼ wavelength of one wavelength at a predetermined frequency of power supplied from the high frequency power supply 444. Set to the length to be. For example, in the case of 27.12 MHz, the length of one wavelength is about 11 meters. The frequency to be used and the resonance coil length can be selected according to the desired plasma generation state, the mechanical dimensions of the plasma generation chamber 430, and the like.

More specifically, the resonance coil 432 takes into account the applied power, the generated magnetic field strength, or the external shape of the device to be applied, for example, 0.01 to 10 by high frequency power of 800 kHz to 50 MHz and 0.5 to 5 kW. In order to generate a Gaussian magnetic field, it has an effective sectional area of 50 to 300 mm 2 and a coil diameter of 200 to 500 mm, and is wound about 2 to 60 times on the outer peripheral side of the reaction vessel 431. As a material constituting the resonance coil 432, a copper pipe, a copper thin plate, an aluminum pipe, an aluminum thin plate, a material obtained by evaporating a copper plate or aluminum on a polymer belt, or the like is used. The resonant coil 432 is formed of an insulating material in a flat plate shape, and is supported by a plurality of support portions that are vertically provided on the upper end surface of the base plate 448.

Both ends of the resonance coil 432 are electrically grounded, but at least one end of the resonance coil 432 finely adjusts the electrical length of the resonance coil during the initial installation of the apparatus or when processing conditions are changed. Therefore, it is grounded via the movable tap 462. Reference numeral 464 in FIG. 4 indicates the other fixed ground location. Furthermore, a power feeding portion is provided between the grounded ends of the resonance coil 432 by a movable tap 466 in order to finely adjust the impedance of the resonance coil 432 when the apparatus is first installed or when processing conditions are changed. It is done.

That is, the resonance coil 432 includes ground portions that are electrically grounded at both ends, and power supply portions that are supplied with power from the high-frequency power source 444, and at least one of the ground portions is positioned. It is an adjustable variable ground part, and the power feeding part is a variable power feeding part whose position can be adjusted. Since the resonance coil 432 includes the variable ground unit and the variable power supply unit, the resonance frequency and load impedance of the plasma generation chamber 430 can be adjusted more easily as will be described later.

Furthermore, a waveform adjustment circuit including a coil and a shield may be inserted at one end (or both ends) of the resonance coil 432 so that the phase and antiphase currents flow symmetrically with respect to the electrical midpoint of the resonance coil 432. Such a waveform adjusting circuit is configured as an open circuit by setting the end of the resonance coil 432 to an electrically disconnected state or an electrically equivalent state. Further, the end of the resonance coil 432 may be ungrounded by a choke series resistor and may be DC-connected to a fixed reference potential.

The outer shield 452 is provided to shield leakage of electromagnetic waves to the outside of the resonance coil 432 and to form a capacitance component necessary for configuring a resonance circuit with the resonance coil 432. The outer shield 452 is generally formed in a cylindrical shape using a conductive material such as aluminum alloy, copper, or copper alloy. The outer shield 452 is arranged at a distance of, for example, about 5 to 10 mm from the outer periphery of the resonance coil 432. In general, the outer shield 452 is grounded so that the potential is equal to both ends of the resonance coil 432. To accurately set the resonance number of the resonance coil 432, one end or both ends of the outer shield 452 are tapped positions. The trimming capacitance may be inserted between the resonance coil 432 and the outer shield 452.

As the high-frequency power source 444, an appropriate power source such as an RF generator can be used as long as it is a power source that can supply power of the necessary voltage and frequency to the resonance coil 432. A high frequency power supply capable of supplying about 5 kW of power is used. The high-frequency power supply 444, the frequency matching unit 446, the resonance coil 432, and the reflected wave wattmeter 468 described later are collectively referred to as a plasma generation unit.

Also, a reflected wave wattmeter 468 is installed on the output side of the high frequency power supply 444, and the reflected wave power detected by the reflected wave wattmeter 468 is input to the controller 700. The controller 700 is used as a control unit that controls at least the plasma generation unit and the gas supply unit 490, and does not simply control only the high-frequency power source 444 but controls the entire substrate processing apparatus 10. A display 472 that is a display unit is connected to the controller 700. The display 472 displays, for example, data detected by various detection units provided in the substrate processing apparatus 10, such as the detection result of the reflected wave by the reflected wave wattmeter 468.

In the present embodiment, an inductively coupled plasma (ICP) plasma generation unit is used as a plasma generation method, but the plasma generation unit is not limited to this, and, for example, a capacitively coupled plasma (CCP) method is used. Alternatively, a plasma generation unit may be used.

(Control part)
Next, a controller 700 that is a control unit (control means) that controls the substrate processing apparatus 10 of the present embodiment will be described with reference to FIG. FIG. 5 is a schematic configuration diagram of a controller of the substrate processing apparatus 10 preferably used in the present embodiment.

As shown in FIG. 5, the controller 700, which is a control unit (control means), includes a CPU (Central Processing Unit) 701a, a RAM (Random Access Memory) 701b, a storage device 701c, and an I / O port 701d. It is configured as a computer. The RAM 701b, the storage device 701c, and the I / O port 701d are configured to exchange data with the CPU 701a via the internal bus 701e. For example, an input / output device 702 configured as a touch panel or the like is connected to the controller 700.

The storage device 701c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like. In the storage device 701c, a control program for controlling the operation of the substrate processing apparatus 10 and a process recipe in which a procedure and conditions for substrate processing such as film formation processing described later are described in a readable manner. Note that the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 700 to execute each procedure in a substrate processing step to be described later, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. The RAM 701b is configured as a memory area (work area) in which a program or data read by the CPU 701a is temporarily stored.

The I / O port 701d is connected to the mass flow controllers 477 and 483, the valves 474 and 478, the exhaust device 479, the high frequency power supply 444, the frequency matching unit 446, the reflected wattmeter 468, the display 472, the heater 463, and the like. The I / O port 701d is also connected to a lift drive unit (not shown).

The CPU 701a is configured to read out and execute a control program from the storage device 701c, and to read out a process recipe from the storage device 701c in response to an operation command input from the input / output device 702 or the like. Then, the CPU 701 a adjusts the flow rates of various gases by the mass flow controllers 477 and 483, the opening and closing operations of the valves 474 and 478, the pressure adjusting operation by the exhaust device 479, and the heating of the heater 463 so as to follow the contents of the read process recipe. It is configured to control the lifting / lowering operation of the lifter pin 413 by the lifting / lowering driving unit, the power supply and stopping by the high frequency power supply 444, the impedance adjustment operation by the frequency matching unit 446, the display of various data by the display 472, and the like.

Note that the controller 700 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer. For example, an external storage device storing the above-described program (for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) The controller 700 according to the present embodiment can be configured by preparing 703 and installing a program in a general-purpose computer using the external storage device 703. Note that the means for supplying the program to the computer is not limited to supplying the program via the external storage device 703. For example, the program may be supplied without using the external storage device 703 by using communication means such as the Internet or a dedicated line. The storage device 701c and the external storage device 703 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. Note that in this specification, the term recording medium may include only the storage device 701c, only the external storage device 703, or both.

(3) Substrate Processing Step Subsequently, a substrate processing step executed using the substrate processing apparatus 10 including the process chamber 410 described above will be described as one step of the semiconductor manufacturing process according to the present embodiment.

Here, the solder bump formed on the substrate to be processed in this embodiment will be described. FIG. 6 is a schematic view showing the state of the electrode 800 formed on the wafer and the solder bump formed on the electrode 800.

As described above, solder bumps are generally formed by depositing solder on the electrodes using a paste printing method or plating method after electrodes are formed on the wafer. FIG. 6A shows a solder bump 801 (a) formed by a paste printing method or a plating method. The solder bump 801 (a) has fine irregularities on the surface. Therefore, if the solder bump 801 (a) is melted in this state and the electrode 800 is connected to the lead frame or the like, bubbles are taken into the solder and the connection strength and resistance are reduced. In this embodiment, in order to prevent this problem, a heat treatment is performed to smooth the solder surface by heating the solder bump 801 (a) to a melting point of the solder or higher once before the connection process.

Further, the surface of the solder bump 801 (a) is usually covered with a natural oxide film 801 (a) ′. Therefore, in this embodiment, before the melting / reforming is performed by the heat treatment, a process of reducing and removing the natural oxide film on the surface is performed. A series of treatments for reducing and removing the surface natural oxide film 801 (a) ′ and heat treatment for melting and reforming the solder are collectively referred to as reflow treatment.

FIG. 7 is a flowchart showing a reflow processing procedure in the present embodiment. In the substrate processing apparatus 10 according to the present embodiment, the wafer 600 is transferred to the load lock chamber 250 (260), the pressure inside the load lock chamber 250 (260) is reduced, and the load lock chamber 250 (260) passes through the transfer module 310. The wafer 600 is carried into and placed in the process chamber 410 (420), and the surface pre-oxide film reduction / removal processing of the solder bumps 801 (a) formed on the wafer 600 is performed in the process chamber 410 (420). The solder bumps from which the surface natural oxide film has been removed are melted and re-formed, and transferred to the load lock chamber 250 (260) again via the transfer module 310.

(Board loading / mounting process)
In step S <b> 120 of FIG. 6, a substrate carry-in / placement process into the processing chamber 445 is performed. That is, the wafer 600 is loaded into the processing chamber 445 and the wafer 600 is placed on the lifter pin support portion 414.

Specifically, in step S120, the controller 700 causes the finger 321 loaded with the wafer 600 to enter the processing chamber 445 via the gate valve 313, and at the same time, raises the lifter pin 413 and is raised to the finger 321. The wafer 600 is placed on the lifter pin support portion 414 of the lifter pin 413. Thereafter, the controller 700 raises and lowers the lifter pins 413 so that the distance between the wafer 600 and the susceptor table 411 becomes a predetermined distance described later (for convenience, the distance during loading and mounting is referred to as the distance L1). To do. In some cases, the wafer 600 may be completely adhered (distance 0) to the susceptor table 411. The lifting and lowering of the lifter pin 413 is performed by lifting and lowering the lifting and lowering substrate 471 connected to the lifter pin 413 along the guide shaft 467 by a lifting and lowering driving unit (not shown).

Here, the heater 463 provided in the susceptor 459 is heated in advance, and the loaded wafer 600 can be heated to a predetermined wafer temperature within a range of room temperature to 300 ° C.

In the substrate carrying-in / placement process, the wafer 600 is preferably kept in a reduced pressure state purged with an inert gas.

(Oxide film reduction process)
Subsequently, in step S140, a reduction process of the surface natural oxide film 801 (a) ′ of the solder bump formed on the wafer 600 is performed.

In step S < _b > 140, the controller 700 controls the gas supply unit 490, and causes the gas supply unit 490 to pass H ₂ (hydrogen) gas that is a reducing gas and N ₂ ( Nitrogen) gas is supplied to the processing chamber 445 (S141). At this time, the total flow rate of the supplied gas is set to a predetermined flow rate within a range of about 0.1 to 10 slm, for example. In addition, the controller 700 maintains the pressure in the reaction vessel 431 and the processing chamber 445 at a predetermined pressure (for example, in the range of about 1 to 1330 Pa) by adjusting the exhaust amount with the exhaust device 479 including the pressure adjustment mechanism.

In subsequent step S142, the controller 700 controls the high frequency power supply 444 to supply power to the resonance coil 432, accelerates free electrons by an induced magnetic field excited inside the resonance coil 432, and collides with gas molecules. Plasma molecules are generated by exciting gas molecules. In this way, the supplied H ₂ gas and N ₂ gas are turned into plasma. The high frequency power applied to the resonance coil 432 from the high frequency power supply 444 is a predetermined power within a range of about 0.5 to 5 kW, for example.

The plasma generated by the reaction gas containing hydrogen (H) element and nitrogen (N) element contains active species mainly composed of H radicals obtained by discharge, and solder bumps formed on the wafer 600 by the H radicals. By reacting with the natural oxide film 801 (a) ′ on the surface and reducing the oxide film, the natural oxide film is removed from the surface of the solder bump 801 (a).

That is, hydrogen (H radicals) activated in plasma and the natural oxide film 801 (a) ′ on the surface of the solder bump formed on the wafer 600 react as follows, whereby the surface of the solder bump 801 (a). The natural oxide film is removed from. FIG. 6B shows a state of the solder bump 801 (b) after the natural oxide film 801 (a) ′ on the surface of the solder bump is removed in the oxide film reduction step S140. After the oxide film reduction process, the solder is exposed.

Subsequently, the application of the high frequency power to the resonance coil 432 is continued for a predetermined time, the reduction process of the natural oxide film is performed, and then the application of the high frequency power is stopped (S143). As a result, the generation of plasma is stopped and the oxide film reduction step is completed.

In the oxide film reduction process in this embodiment, in particular, the total flow rate of H ₂ gas and N ₂ gas supplied to the processing chamber 445 is ₂ slm, and the mixing ratio is H ₂ : 4% and N ₂ : 96%. did. The pressure in the processing chamber 445 was adjusted to 2 Torr (about 266 Pa), for example. The resonance coil 432 was supplied with 1000 W of high frequency power for 60 seconds to perform an oxide film reduction process. The temperature of the heater 463 was 260 ° C., and the distance L1 between the wafer 600 and the susceptor table 411 in this step was 15 mm.

(Heat treatment process)
Subsequently, in step S160, a heat treatment process for melting and re-forming the solder bump 801 (b) from which the surface natural oxide film has been removed in the oxide film reduction process S140 is performed. Even after the surface natural oxide film is removed, fine irregularities exist on the surface of the solder bump 801 (b). Therefore, in this step, heat treatment is performed to smooth the solder surface by heating the solder bump 801 (b) above the melting point of the solder and melting it once. In this embodiment, the oxide film reduction process and the heat treatment process are continuously performed in the same process chamber 401.

In the heat treatment step, the solder bump 801 (b) is melted by heating the wafer 600 by the heater 463 provided in the susceptor 459. However, it is generally difficult to quickly control the temperature of the heater itself, and the temperature of the wafer cannot be controlled quickly and freely. Therefore, in the present embodiment, a desired wafer is controlled by controlling the type, pressure, mixing ratio, flow rate, and the like of the gas supplied into the processing chamber 445 and the distance between the wafer 600 and the heater 463 as described below. Achieve temperature control.

8 to 10 show timing charts of various process conditions in this embodiment. Specifically, the temperature of the heater 463, the distance between the wafer 600 and the susceptor table 411, the pressure in the processing chamber 445, and the supply to the processing chamber 445 in each of the substrate carry-in / placement process, oxide film reduction process, and heat treatment process The flow rate of various gases and the temperature change of the wafer 600 are shown. Hereinafter, the three patterns will be described with reference to FIGS.

Here, the temperature of the heater 463 is constant in any of the patterns 1 to 3 and is higher than the melting point of the solder and is set to a temperature sufficient to melt the solder bump 801 (b), for example, 260 ° C.

Although the melting point of solder varies depending on the type of solder used, it can be said that it is generally 180 ° C. or higher and lower than 250 ° C. Therefore, the maximum temperature of the wafer in the heat treatment process is also less than 250 ° C., and further heating is not desirable. When performing such heating using a general heater having a large heat capacity, the set temperature of the heater is kept constant at the melting point temperature of solder + α, and the amount of heat transferred from the heater to the substrate is adjusted, It is preferred that the wafer temperature be saturated at the desired temperature. On the other hand, the temperature of + α should be set in consideration of the amount of heat transferred from the heater to the wafer, but is in the range of about 0 to 100 ° C., for example. When the temperature of the heater is in such a temperature range, the difference between the radiation wavelength from the heater and the absorption wavelength of the wafer is large, and the amount of heat received by the wafer is small. Therefore, as in this embodiment, the gas surrounding the heater and the wafer It is effective to make use of the heat transferred by heat conduction via

Also, the time for performing the heat treatment step is appropriately adjusted according to conditions such as the state of solder bumps and the heat resistance time of other elements formed on the wafer. In this embodiment, for example, the heat treatment step is performed for 90 seconds.

(Pattern 1)
FIG. 8 is a timing chart of various process conditions in the pattern 1 of the present embodiment.

[Distance between wafer 600 and susceptor table 411]
The distance between the wafer 600 and the susceptor table 411 is a constant distance L1 (for example, 15 mm) in the substrate loading / mounting process and the oxide film reduction process, and the distance L2 between the two is shorter than L1 at the start of the heat treatment process. (For example, 2 mm). By bringing the wafer 600 closer to the heater 463 provided at the lower part of the susceptor table 411, the amount of heat transferred from the heater 463 to the wafer 600 can be increased, and the rate of temperature increase can be increased.

However, if the back surface of the wafer 600 and the susceptor table 411 are brought into contact with each other, scratches or foreign matter may be attached to the back surface of the wafer 600, or the wafer temperature may vary greatly within the surface due to variations in the degree of contact. There is a possibility. Therefore, it is preferable that the distance L2 is adjusted within a range of about 0.5 to 5 mm, for example, and a gas is interposed between the wafer 600 and the susceptor table 411. At this time, if the gas has a high thermal conductivity, the uniformity of the wafer temperature can be improved. The distance L1 may be a suitable distance from the viewpoint of the substrate transport mechanism, for example, or may be adjusted by finding a position where the wafer temperature is difficult to rise so that the wafer 600 is not unnecessarily heated. .

Subsequently, in the second half of the heat treatment step, the distance between the wafer 600 and the susceptor table 411 is returned to L1. As a result, the amount of heat transferred from the heater 463 to the wafer 600 decreases, so that the temperature of the wafer 600 can be lowered or the temperature drop rate can be increased. In addition, the temperature rise can be suppressed so that unnecessary alloying of the solder bumps does not occur or the heat resistance temperature of other elements formed on the wafer 600 is not exceeded.

In this pattern, the distance between the wafer 600 and the susceptor table 411 in the second half of the heat treatment process is the same as L1 in the substrate carry-in / placement process and the oxide film reduction process, but in the second half of the heat treatment process, the temperature drop rate is increased. Therefore, the distance may be set larger than L1.

[Pressure in processing chamber 445]
The pressure in the processing chamber 445 is set to P1 (for example, 2 Torr) in the oxide film reduction process, and the pressure is set to P2 (for example, 2.5 mm) higher than P1 at the start of the heat treatment process. By increasing the pressure of the gas supplied between the wafer 600 and the susceptor table 411, the amount of heat transferred from the heater 463 to the wafer 600 through heat conduction through the gas is increased, and the temperature increase rate of the wafer 600 is increased. be able to. Subsequently, in the second half of the heat treatment step, the pressure in the processing chamber 445 is lowered to P3 lower than P2. As a result, the amount of heat transferred from the heater 463 to the wafer 600 is reduced, so that the temperature drop rate of the wafer 600 is increased, the solder bump is not required to be alloyed, and the heat resistance temperature of other elements formed on the wafer 600 is not exceeded. The temperature rise can be suppressed. In order to increase the temperature rising rate, the pressure may be controlled to be higher, and to increase the temperature decreasing rate, the pressure may be controlled to be lower.

[Gas type and flow rate]
In this pattern, three types of gas, N ₂ gas, H ₂ gas, and He (helium) gas, are used as the gas supplied into the processing chamber 445. He gas is supplied from a third gas supply unit (not shown). In the oxide film reduction step, H ₂ gas is supplied at a flow rate F ₂ and N ₂ gas is supplied at a flow rate F ₁ ′ in any of the patterns 1 to 3. Specific flow rates and mixing ratios in the oxide film reduction step are as described above. Therefore, no He gas is supplied in the oxide film reduction process.

In the heat treatment process in this pattern, first, the flow rate of N ₂ gas is continued as F ₁ ′ as in the oxide film reduction process, and the supply of H ₂ gas is stopped. Further, it starts supplying the He gas at a flow rate _{F 3} at the same time. The total flow rate of He gas and N ₂ gas is set to ₂ slm, for example. Here, He gas is characterized by high thermal conductivity compared to general gas (especially compared to N ₂ gas). Therefore, by supplying the He gas into the processing chamber 445 (particularly the space between the wafer 600 and the heater 463), the amount of heat transferred from the heater 463 to the wafer 600 through heat conduction through the gas containing He gas is increased, and the wafer is The temperature rising rate of 600 can be increased. In order to increase the temperature rising rate, the flow rate of He gas or the mixing ratio may be controlled to be larger.

Subsequently, in the second half of the heat treatment step, the supply of He gas into the processing chamber 445 is stopped (N ₂ gas supply continues). As a result, the amount of heat transferred from the heater 463 to the wafer 600 is reduced, so that the temperature drop rate of the wafer 600 can be increased. Further, the temperature rise can be suppressed so that unnecessary alloying of the solder bumps does not occur or the heat resistance temperature of other elements formed on the wafer 600 is not exceeded. In order to increase the temperature lowering rate, the flow rate of He gas or the mixing ratio may be controlled to be smaller.

In this pattern, He gas is used as a gas having high thermal conductivity. However, H ₂ gas has high thermal conductivity like He gas, and can be used to increase the amount of heat conduction. However, since there is a risk of explosion due to mixing with oxygen, He gas was used in this pattern from the viewpoint of safety. Further, in the heat treatment step, N ₂ gas mainly serves as a dilution gas, and the amount of heat conduction can be controlled by controlling the flow rate. (For example, the amount of heat transferred by heat conduction can be reduced by increasing the mixing ratio of N ₂ gas, and the amount of heat transferred by heat conduction can be increased by lowering the mixing ratio of N ₂ gas.)

(Pattern 2)
FIG. 9 is a timing chart of various process conditions in the pattern 2 of the present embodiment. The pattern 2 is the same as the pattern 1 except for the type of gas and the flow rate control.

[Gas type and flow rate]
In this pattern, He gas is not used in the heat treatment step, and H ₂ gas is used as a gas having high thermal conductivity. That is, after supplying the H ₂ gas at a flow rate F ₂ in the oxide film reduction step, a heat treatment step continues to continue supplying the H ₂ gas at a large flow rate F ₃ than F _2. Accordingly, in the heat treatment step, a large amount of H ₂ gas having high thermal conductivity is supplied into the processing chamber 445 (particularly, the space between the wafer 600 and the heater 463), whereby the heater is thermally conductive via the gas containing H ₂ gas. The amount of heat transferred from 463 to wafer 600 can be further increased, and the temperature increase rate of wafer 600 can be increased.

Subsequently, in the second half of the heat treatment step, the supply of H ₂ gas into the processing chamber 445 is stopped (N ₂ gas supply continues). As a result, the amount of heat transferred from the heater 463 to the wafer 600 is reduced, so that the temperature drop rate of the wafer 600 can be increased. Further, the temperature rise can be suppressed so that unnecessary alloying of the solder bumps does not occur or the heat resistance temperature of other elements formed on the wafer 600 is not exceeded. In order to increase the temperature drop rate, the flow rate of H ₂ gas or the mixing ratio may be controlled to be smaller.

In the present pattern, but increased the flow rate F ₃ of the H ₂ gas in the heat treatment step than the flow rate F ₂ in H ₂ gas in the oxidation film reduction step, the flow rate F ₃ depending on other conditions or desired heating-up rate same as flow rate F _2, or may be reduced.

(Pattern 3)
FIG. 10 is a timing chart of various process conditions in the pattern 3 of the present embodiment. Since the pattern 3 is the same as the pattern 2 except for the flow rate control of the H ₂ gas in the heat treatment step, the description is omitted otherwise.

[Gas type and flow rate]
In this pattern, after supplying H ₂ gas at a flow rate F ₂ in the oxide film reduction step more than F ₂ is in the heat treatment step, a predetermined time H ₂ gas yet more flow F ₁₃ than the flow rate F ₃ patterns 2 Supply. _Thereafter, a predetermined time for supplying the _{H 2} gas with a small flow rate _{F 3} than _{F 13.} Accordingly, while the H ₂ gas is supplied at the flow rate F ₁₃ , the wafer 600 can be heated at a temperature rising rate higher than that of the pattern 2 at the start of the heat treatment step, and the H ₂ gas is supplied at the flow rate F _3. During this time, a temperature that does not exceed the heat resistant upper limit temperature of the element formed on the wafer 600 can be maintained.

FIG. 6C shows a solder bump 801 (c) that has been heat-treated and melted / reformed in the heat treatment step S160. As shown in FIG. 6 (c), the solder bump 801 (b) having fine irregularities on the surface is heated to a temperature higher than the melting point of the solder through this heat treatment, and once melted, the solder surface is smooth. It becomes.

In the present embodiment (Patterns 1 to 3), the supply of He gas or H ₂ gas is immediately stopped in the latter half of the heat treatment step. However, depending on the desired temperature drop rate, the flow rate of H ₂ gas is reduced for a certain period of time. It may be stopped after maintaining only, or the supply may be stopped after controlling the flow rate to gradually decrease.

Examples of the gas having high thermal conductivity include Ne (neon) gas in addition to H ₂ gas and He gas. Other preferable conditions for selecting a gas having a high thermal conductivity include, in addition to the small size of the molecule from the viewpoint of good thermal conductivity, for example, general and inexpensive, and handling hazards. And there are no adverse effects on other elements (devices and the like) on the wafer.

In this embodiment, the temperature is controlled by using a gas having high thermal conductivity. Conversely, a gas having a low thermal conductivity (particularly a gas having a lower thermal conductivity than N ₂ gas) is supplied. The amount of heat transferred by heat conduction may be controlled by controlling the flow rate. By increasing the mixing ratio of the gas having low thermal conductivity, the amount of heat transmitted by heat conduction through the gas can be reduced, and by decreasing the mixing ratio, the amount of heat transmitted by heat conduction through the gas can be increased.

Further, in this embodiment, He gas or H ₂ gas is used as a gas having high thermal conductivity and N ₂ gas is used as a dilution gas for temperature control in the heat treatment process. However, the present invention is not limited to these gases, and the flow rate and mixing ratio of each gas are set using at least one kind of gas, ie, a gas for dilution and a gas having high thermal conductivity with respect to the gas for dilution. By controlling, the temperature of the wafer can be controlled efficiently.

In this embodiment, temperature characteristics under various process conditions are measured in advance using a dummy wafer provided with a temperature sensor for temperature measurement, instead of a wafer (product wafer) that actually performs reflow processing of solder bumps. Determine the characteristic process conditions. Then, the product wafer reflow process is executed in accordance with the predetermined process conditions. However, the temperature control is not performed based on the process conditions determined in advance as in the present embodiment. For example, a sensor for measuring the temperature of the wafer 600 is provided in the processing chamber 445, and the wafer acquired by the controller 700 from the sensor is provided. The wafer temperature may be controlled by sequentially controlling the type and flow rate of the supplied gas, the pressure in the processing chamber 445, the distance between the wafer 600 and the susceptor table 411, and the like based on the temperature of 600.

(Substrate unloading process)
After the heat treatment step S160 is performed, a step of unloading the wafer 600 from the processing chamber 445 is performed in step S180 of FIG. That is, in the substrate unloading step S180, the controller 700 controls the fingers 321 and the lifter pins 413 to unload the wafer 600 that has undergone the reflow process through the heat treatment step from the inside of the processing chamber 445.

According to the present embodiment, one or more of the following effects are achieved. (A) According to the present embodiment, in the heat treatment process for heating the wafer, control is performed so as to change at least one of the flow rates and mixing ratios of a plurality of types of gases introduced into the processing chamber. Accordingly, the amount of heat transmitted from the heater to the wafer, particularly the amount of heat transmitted by heat conduction through the gas, can be changed, so that the wafer can be controlled to have a desired temperature. In particular, it is possible to control to heat the wafer at a desired temperature increase rate and temperature decrease rate.

(B) According to the present embodiment, at least one of the gases introduced into the processing chamber in the heat treatment step is a gas having a high thermal conductivity (particularly, more thermally conductive than other gases introduced into the processing chamber). High gas). The temperature of the wafer should be controlled because the amount of heat transferred from the heater to the wafer, especially the amount of heat transferred through the gas, can be controlled by changing the flow rate of gas with high thermal conductivity and the mixing ratio with other gases. Can do.

(C) According to this embodiment, in the heat treatment step, control is performed so as to change the pressure of the atmosphere in the processing chamber. Accordingly, the amount of heat transmitted from the heater to the wafer, particularly the amount of heat transmitted by heat conduction through the gas, can be changed, so that the wafer can be controlled to have a desired temperature. In particular, it is possible to control to heat the wafer at a desired temperature increase rate and temperature decrease rate.

(D) According to this embodiment, in the heat treatment step, control is performed so as to change the distance between the wafer and the heater. Thus, the amount of heat transferred from the heater to the wafer can be changed, so that the wafer can be controlled to have a desired temperature. In particular, it is possible to control to heat the wafer at a desired temperature increase rate and temperature decrease rate.

(E) According to this embodiment, the oxide film reduction step and the heat treatment step are continuously performed in the same process chamber. As a result, the time for transferring the wafer from the oxide film removal process to the heat treatment process can be shortened, and re-oxidation can be prevented on the surface of the solder bumps during transfer, and impurities such as moisture can be prevented from adhering to the wafer. You can also.

(F) According to the patterns 2 and 3 in the present embodiment, particularly in the heat treatment step, the H ₂ gas used as the reducing gas in the oxide film reduction step is used as it is as a gas having high thermal conductivity in the heat treatment step. Yes. Therefore, it is not necessary to exhaust the H ₂ gas remaining in the processing chamber in the oxide film reduction step, and the heat treatment step can be started continuously, so that the throughput can be greatly improved. Further, it is not necessary to provide a configuration for supplying new gas (He gas) as in the above-described pattern 1, and the apparatus configuration in the oxide film reduction process can be used as it is.

(G) When the heater temperature is about room temperature to 300 ° C., the difference between the radiation wavelength from the heater and the absorption wavelength of the wafer is large, and the amount of heat received by the wafer by radiation is small. According to the present embodiment, it is possible to control the amount of heat transferred by heat conduction via the gas surrounding the heater and the wafer (particularly the gas existing in the space between the heater and the wafer). It is particularly suitable for controlling the temperature.

<Other Embodiments of the Present Invention>

In the above-described embodiment, He gas or H ₂ gas is used as the gas having high thermal conductivity and N ₂ gas is used as the dilution gas for temperature control in the heat treatment process. However, the present invention is not limited to these gases, and the flow rate and mixing ratio of each gas are controlled by using at least one kind of gas for dilution and one having high thermal conductivity for the gas for dilution. As a result, the temperature of the wafer can be controlled efficiently.

Similarly, by using at least one type of gas for dilution and one having low thermal conductivity for the gas for dilution, and controlling the flow rate and mixing ratio of each gas, The temperature can also be controlled.

In the above-described embodiment, the heat treatment process is performed after the oxide film reduction process of the bump solder. However, the heat treatment process is not limited to the presence or absence of the oxide film reduction process and the method, and the general heat treatment process in the reflow process of the bump solder. The structure and method of the heat treatment process can be implemented. Furthermore, the present invention is not limited to the reflow process of the bump solder, but can be applied for the purpose of controlling the wafer temperature when the wafer to be processed is heated by the heater.

Also, the reflow processing target on which the solder bumps are formed is not limited to a single wafer, but may be a laminated substrate in which different substrates are bonded together with an adhesive or solder. In this case, the upper limit temperature of the laminated substrate in the heat treatment step is set to a temperature lower than the heat resistant temperature of the adhesive used for bonding the substrates or the temperature at which the solder melts.

Further, the reflow processing target on which the solder bumps are formed may be a laminated substrate in which a silicon substrate on which solder bumps are formed and a support glass substrate are bonded together. This support glass substrate is bonded to support a thin silicon substrate.

In addition, the reflow processing target on which the solder bumps are formed may be a wafer obtained by bonding a die processed wafer and another substrate.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1) A step of placing a substrate on a substrate support mechanism provided in a processing chamber for processing a substrate, a plurality of types of gases introduced into the processing chamber, a heater provided in the processing chamber, A step of supplying the plurality of types of gases to a space between the substrate and a step of heating the substrate by the heater; and the step of heating the substrate by the heater is introduced into the processing chamber. There is provided a method for manufacturing a semiconductor device, wherein the temperature of the substrate is controlled by changing at least one of flow rates and mixing ratios of a plurality of types of gases.

(Supplementary Note 2) In the step of heating the substrate with the heater, at least one of the flow rate and the mixing ratio of a plurality of types of gases introduced into the processing chamber is changed to increase or decrease the temperature of the substrate. A method for manufacturing a semiconductor device according to appendix 1, wherein at least one of the above is controlled.

(Supplementary Note 3) In the step of heating the substrate by the heater, the temperature of the substrate is set to a predetermined temperature by changing at least one of a flow rate and a mixing ratio of a plurality of types of gases introduced into the processing chamber. A method for manufacturing a semiconductor device according to appendix 1, which is controlled so as to be, is provided.

(Supplementary note 4) The semiconductor device according to supplementary note 1, wherein at least one of the plurality of types of gases is a gas having higher thermal conductivity than other types of gases other than the at least one type of gas. A manufacturing method is provided.

(Supplementary Note 5) In the step of heating the substrate by the heater, at least one of a flow rate of the at least one gas and a mixing ratio of the at least one gas to the other gas is increased. The method for manufacturing a semiconductor device according to appendix 4, wherein the substrate temperature increasing rate is increased or the temperature decreasing rate is decreased.

(Appendix 6) In any one of appendices 1 to 5, in the step of heating the substrate by the heater, the temperature of the substrate is controlled to be a temperature at which the solder bumps formed on the substrate are melted. A method for manufacturing a semiconductor device is provided.

(Supplementary note 7) The method for manufacturing a semiconductor device according to any one of supplementary notes 1 to 6, wherein the substrate support mechanism includes a plurality of pins, and a gap is formed between the substrate and the heater. Is provided.

(Supplementary Note 8) Solder bumps are formed on the substrate, and after the step of placing the substrate on the substrate support mechanism, a step of supplying a reducing gas to the processing chamber, and a plasma of the reducing gas The method for manufacturing a semiconductor device according to any one of appendices 1 to 7, further comprising: a step of generating an oxide film on a surface of the solder bump on the substrate by plasma of the reducing gas; Is provided.

(Additional remark 9) The manufacturing method of the semiconductor device of Additional remark 8 whose any one of the said reducing gas and said several types of gas is the same gas is provided.

(Supplementary Note 10) In the step of heating the substrate by the heater, the temperature of the substrate is changed to a predetermined temperature by changing at least one of the pressure of the atmosphere in the processing chamber and the distance between the heater and the substrate. The method of manufacturing a semiconductor device according to any one of appendices 1 to 9, which is controlled to be

(Additional remark 11) The said board | substrate is a laminated substrate which bonded together the several different board | substrate with the adhesive agent, and the process temperature of the said board | substrate is not exceeded in the process of heating the said board | substrate with the said heater. A method of manufacturing a semiconductor device according to any one of appendices 1 to 10, wherein the method is controlled.

(Additional remark 12) The temperature of the said heater is 300 degrees C or less, The manufacturing method of the semiconductor device as described in any one of Additional remark 1 thru | or 11 is provided.

(Additional remark 13) Moreover, according to the other aspect of this invention, the process chamber which processes a substrate, the substrate support mechanism provided in the said process chamber, and supporting the said substrate, provided in the said process chamber, the said substrate A heater that heats the substrate, a plurality of gas supply units that supply different types of gases to the processing chamber, an exhaust unit that exhausts the atmosphere in the processing chamber, and the substrate supported by the substrate support mechanism. A control unit configured to control the temperature of the substrate by changing at least one of a flow rate and a mixing ratio of the gas supplied from each of the plurality of gas supply units when heating by A processing device is provided.

(Additional remark 14) When the said control part heats the said board | substrate supported by the said board | substrate support mechanism with the said heater, at least any one of the flow volume of gas supplied from each of these gas supply part, and a mixing ratio The substrate processing apparatus according to appendix 13, wherein the substrate processing apparatus is controlled to change at least one of a temperature rising rate and a temperature falling rate of the substrate.

(Additional remark 15) When the said support part heats the said board | substrate supported by the said board | substrate support mechanism with the said heater, at least any one of the flow volume of the gas supplied from each of these gas supply part, and a mixing ratio 14. A substrate processing apparatus according to appendix 13, wherein the substrate processing apparatus is controlled to change the temperature of the substrate to a predetermined temperature.

(Supplementary Note 16) Of the gases supplied from each of the plurality of gas supply units, the gas supplied from at least one gas supply unit is supplied from a gas supply unit other than the at least one gas supply unit. A substrate processing apparatus according to appendix 13, which is a gas having higher thermal conductivity than a gas to be provided.

(Supplementary Note 17) When the control unit heats the substrate supported by the substrate support mechanism with the heater, the flow rate of the gas supplied from the at least one gas supply unit and the other gas supply unit The temperature increase rate of the substrate is increased by controlling the plurality of gas supply units so that at least one of the mixing ratio of the gas supplied from the at least one gas supply unit to the supplied gas increases. Or a substrate processing apparatus according to appendix 16, which is configured to reduce a temperature drop rate.

(Supplementary Note 18) When the substrate supported by the substrate support mechanism is heated by the heater, the control unit controls the gas supply unit that supplies the gas having high thermal conductivity to thereby control the thermal conductivity. A substrate processing apparatus according to appendix 17, wherein a high gas flow rate is increased.

(Additional remark 19) When the said support part heats the said board | substrate supported by the said board | substrate support mechanism with the said heater, at least 1 of the said gas supply parts which supplies gas other than the said gas with high thermal conductivity The substrate processing apparatus according to appendix 17, wherein a gas supply unit that supplies a gas is controlled to reduce a flow rate of a gas other than the gas having a high thermal conductivity.

(Additional remark 20) The said control part controls the temperature of the said board | substrate so that it may become the temperature which fuse | melts the solder bump formed on the said board | substrate, when heating the said board | substrate supported by the said board | substrate support mechanism with the said heater. A substrate processing apparatus according to any one of appendices 13 to 19 is provided.

(Supplementary Note 21) At least one of the plurality of gas supply units is a gas supply unit that supplies a reducing gas, and generates plasma of the reducing gas supplied from the gas supply unit that supplies the reducing gas. A plasma generation unit is further provided, and the control unit controls the plasma generation unit, and the surface oxide film of the solder bump formed on the substrate supported by the substrate support mechanism by the plasma of the reducing gas The substrate processing apparatus according to any one of appendices 13 to 20, wherein the substrate is heated by the heater after the substrate is reduced.

(Additional remark 22) The substrate processing apparatus as described in any one of additional remark 13 thru | or 21 whose temperature of the said heater is 300 degrees C or less is provided.

(Additional remark 23) Moreover, according to the other aspect of this invention, the procedure which mounts a board | substrate on the board | substrate support mechanism provided in the process chamber which processes a substrate, and introduce | transduces several types of gas into the said process chamber And causing a computer to execute a procedure of supplying the plurality of types of gases to a space between the heater provided in the processing chamber and the substrate, and a procedure of heating the substrate by the heater. In the procedure of heating the substrate according to the above, the temperature of the substrate is controlled by changing the flow rate and / or the mixing ratio of a plurality of types of gases introduced into the processing chamber. Recording medium is provided.

According to the method for manufacturing a semiconductor device, the substrate processing apparatus, and the like according to the present invention, since the heat treatment is performed by controlling the temperature of the substrate, the manufacturing quality of the semiconductor device can be improved.

410 ... Process chamber, 411 ... susceptor table, 413 ... lifter pin, 430 ... plasma generating chamber, 432 ... resonance coil, 445 ... processing chamber, 458 ... susceptor, 463 ... Heater, 477 ... Mass flow controller, 479 ... Exhaust device, 483 ... Mass flow controller, 600 ... Wafer

Claims (14)

1. Placing the substrate on a substrate support mechanism provided in a processing chamber for processing the substrate;
   Introducing a plurality of types of gases into the processing chamber and supplying the plurality of types of gases into a space between a heater provided in the processing chamber and the substrate;
   Heating the substrate with the heater, and
   In the step of heating the substrate by the heater, the temperature of the substrate is controlled by changing at least one of the flow rate and mixing ratio of the plurality of types of gases introduced into the processing chamber.
   A method for manufacturing a semiconductor device.
2. At least one type of the plurality of types of gases is a gas having a higher thermal conductivity than other types of gases other than the at least one type of gas.
   A method for manufacturing a semiconductor device according to claim 1.
3. In the step of heating the substrate by the heater,
   Increasing at least one of the flow rate of the at least one kind of gas and the mixing ratio of the at least one kind of gas to the other kind of gas increases the temperature rising rate of the substrate, Make it smaller,
   A method for manufacturing a semiconductor device according to claim 2.
4. In the step of heating the substrate by the heater,
   Controlling the temperature of the substrate so as to be a temperature for melting the solder bumps formed on the substrate;
   A method for manufacturing a semiconductor device according to claim 1.
5. The substrate support mechanism is composed of a plurality of pins, and a gap is formed between the substrate and the heater.
   A method for manufacturing a semiconductor device according to claim 1.
6. Solder bumps are formed on the substrate,
   After the step of placing the substrate on the substrate support mechanism,
   Supplying a reducing gas to the processing chamber;
   Generating a plasma of the reducing gas;
   A step of reducing the oxide film on the surface of the solder bump on the substrate by the plasma of the reducing gas,
   A method for manufacturing a semiconductor device according to claim 1.
7. Any one of the reducing gas and the plurality of types of gases is the same gas.
   A method for manufacturing a semiconductor device according to claim 6.
8. In the step of heating the substrate by the heater,
   Changing at least one of the pressure of the atmosphere in the processing chamber or the distance between the heater and the substrate to control the temperature of the substrate to be a predetermined temperature;
   A method for manufacturing a semiconductor device according to claim 1.
9. A processing chamber for processing the substrate;
   A substrate support mechanism provided in the processing chamber and supporting the substrate;
   A heater provided in the processing chamber for heating the substrate;
   A plurality of gas supply units for supplying different types of gases to the processing chamber;
   An exhaust section for exhausting the atmosphere in the processing chamber;
   When the substrate supported by the substrate support mechanism is heated by the heater, the flow rate of the gas supplied from each of the plurality of gas supply units, or the gas supplied from each of the plurality of gas supply units A controller configured to control the temperature of the substrate by changing at least one of the mixing ratios in the processing chamber;
   A substrate processing apparatus.
10. Of the gases supplied from each of the plurality of gas supply units, the gas supplied from at least one gas supply unit is compared with the gas supplied from another gas supply unit other than the at least one gas supply unit. Is a gas with high thermal conductivity,
    The substrate processing apparatus according to claim 9.
11. The control unit is supplied from the flow rate of the gas supplied from the at least one gas supply unit or the other gas supply unit when the substrate supported by the substrate support mechanism is heated by the heater. The temperature increase rate of the substrate is controlled by controlling the plurality of gas supply units so that at least one of the mixing ratio of the gas supplied from the at least one gas supply unit to the gas in the processing chamber increases. Configured to increase or decrease the cooling rate,
    The substrate processing apparatus according to claim 10.
12. The control unit is configured to control the temperature of the substrate to be a temperature at which a solder bump formed on the substrate is melted when the substrate supported by the substrate support mechanism is heated by the heater. The
    The substrate processing apparatus according to claim 9.
13. At least one of the plurality of gas supply units is a gas supply unit that supplies a reducing gas,
    A plasma generation unit that generates plasma of the reducing gas supplied from the gas supply unit that supplies the reducing gas;
    The control unit controls the plasma generation unit to reduce a surface oxide film of a solder bump formed on the substrate supported by the substrate support mechanism with plasma of the reducing gas, and then the heater. Configured to heat the substrate by
    The substrate processing apparatus according to claim 9.
14. A procedure for placing the substrate on a substrate support mechanism provided in a processing chamber for processing the substrate;
    Introducing a plurality of types of gases into the processing chamber and supplying the plurality of types of gases to a space between a heater provided in the processing chamber and the substrate;
    Causing the computer to execute a procedure of heating the substrate by the heater;
    In the procedure of heating the substrate by the heater, the temperature of the substrate is controlled by changing at least one of the flow rate and mixing ratio of a plurality of types of gases introduced into the processing chamber.
    A computer-readable recording medium on which a program is recorded.
    

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