WO2016038100A1 - Organisches bauelement - Google Patents
Organisches bauelement Download PDFInfo
- Publication number
- WO2016038100A1 WO2016038100A1 PCT/EP2015/070636 EP2015070636W WO2016038100A1 WO 2016038100 A1 WO2016038100 A1 WO 2016038100A1 EP 2015070636 W EP2015070636 W EP 2015070636W WO 2016038100 A1 WO2016038100 A1 WO 2016038100A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrode
- organic component
- organic
- layer stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Definitions
- organic component can be an organic optoelectronic element which is provided for the emission and / or detection of electromagnetic radiation act.
- the organic component is an organic light-emitting diode and / or an organic photodiode. According to at least one embodiment of the organic
- Component includes this one for radiation emission
- the organic component comprises a first
- the first layer stack is a functional radiation-emitting and / or radiation-detecting layer stack.
- Layer stack can be a first hole transport layer, a first electron transport layer and / or a
- Layer stacks may be formed with or consist of an organic functional material, for example a polymer.
- the radiation passage area can for example, by a first layer stack
- This electrode can then be
- Random-transmissive is formed when it transmits at least 90%, preferably at least 95%, of the electromagnetic radiation impinging on the material from the spectral range relevant for the component. Conversely, a material is "radiation-reflecting" if it is at least 90%, preferably at least 95% % on the
- the relevant spectral range includes or is the
- the organic component has a main plane of extension in which it extends in lateral directions. Perpendicular to the main extension plane, in the vertical direction, runs the stacking direction of the organic component.
- the organic component has a thickness.
- the thickness of the organic component is small compared to the lateral extent of the organic component and is for example at most 10%, in particular at most 1% of the maximum lateral extent.
- Component comprises this an organic protective diode with a second layer stack.
- the second layer stack may comprise a second electron transport layer, a second hole transport layer and / or a matrix layer.
- the layers of the second layer stack may be filled with an organic functional material, for example a
- Polymer be formed or consist of such.
- the layers of the second layer stack comprise the same materials and / or material combinations as the layers of the first layer stack.
- the matrix layer can be formed, for example, with the material of the emission layer of the first layer stack, wherein the matrix layer can be undoped.
- the matrix layer may have an intrinsically conductive
- organic material include organic material.
- organic material include organic material.
- Protective diode may thus be in particular a PIN diode.
- the layers of the first layer stack and / or the second layer stack may be in the stacking direction
- the organic protective diode is directly downstream of the organic component in the stacking direction.
- the organic protection diode is in direct physical contact with the organic device.
- the organic protective diode is adapted to protect the organic component from electrostatic discharge.
- the organic protective diode can thus be an ESD protective diode (ESD - electrostatic discharge).
- the protection diode can provide protection against inadvertent reverse polarity of the organic device. According to at least one embodiment of the organic
- Component includes this one for radiation emission
- the organic protection diode is directly downstream of the organic device in a stacking direction and configured to protect the organic device from electrostatic discharge.
- Manufacturing process incorporated particles, such as dust particles, and / or determined by short ESD pulses.
- electrostatic discharges may occur which may damage the organic component to such an extent and may lead to failure of the organic component.
- particles which reach this and / or into one of the layers of the organic component during the production of the organic component can lead to a leaky encapsulation and / or to a failure of the organic component as a result of an electrical short circuit.
- Wiring can be dispensed with. Furthermore, the
- organic protection diode so that it mechanically protects the organic component from particles that can lead to a short circuit. For example, you can
- organic protective diode completely cover the organic component in the region of the first layer stack.
- a second layer stack which acts as an organic PIN diode, is applied to the organic component in the stacking direction
- the additionally applied organic protective diode has a stable, blocking
- Component is a pn junction of the organic protection diode connected in anti-parallel to a pn junction of the organic component.
- the first one is a pn junction of the organic protection diode connected in anti-parallel to a pn junction of the organic component.
- Stacking direction is arranged after the first electron transport layer and the second hole transport layer in
- Stacking direction is arranged in front of the second electron transport layer.
- the emission layer may be arranged in the stacking direction between the first hole transport layer and the first electron transport layer.
- the matrix layer may be stacked between the second hole transport layer and the second
- Electron transport layer may be arranged. According to at least one embodiment of the organic
- Component has this a first electrode and a side facing away from the first electrode of the first
- the organic component has a third electrode attached to a side of the second layer stack facing away from the first electrode.
- the first electrode may in particular for electrical
- the first electrode directly adjoins one of the layers of the first layer stack for this purpose.
- the first electrode may be formed with a transparent conductive oxide such as indium tin oxide, or may be made of such a transparent conductive oxide.
- the electrode can form the radiation passage area.
- the second electrode is preferably in direct electrical and / or physical contact with the first layer stack and the second layer stack.
- the second electrode is in the stacking direction between the first
- the second electrode may be provided for electrically contacting both the first layer stack and the second layer stack.
- the second electrode can then be both part of the organic component, as well as the organic protective diode.
- the second electrode simultaneously forms the cathode of the organic component and the anode of
- the third electrode may be provided for electrical contacting of the second layer stack.
- the third electrode for this directly adjacent to one of
- the second electrode and / or the third electrode with an electrically conductive and radiation-reflecting
- Material such as a metal or a metal alloy, be formed or consist thereof.
- the second electrode and / or the third electrode be formed or consist thereof.
- connection layer is not a layer in the technically more narrow sense, but rather, for example, a wire connection.
- the connection layer extends, for example, along the stacking direction on at least one side surface of the organic component and / or on at least one of them
- the connecting layer can additionally the lateral
- the "side surfaces" of a layer and / or of a component may in this case and in the following be outer surfaces of the layer and / or of the component running along the stacking direction.
- the second layer stack comprises a
- the layer structure may be arranged between the first and the third electrode, in particular between the second and the third electrode.
- the layer structure is arranged between the first layer stack of the organic component and the functional layers of the protection diode.
- the borders are arranged between the borders
- Layer structure has in the stacking direction a thickness of at least 5 ym, preferably at least 10 ym, and at most 200 ym, preferably at most 100 ym, on.
- the layer structure may form the hole transport layer or the electron transport layer of the organic protection diode.
- a layer of the layer structure preferably directly adjoins the second electrode.
- the layer structure may be formed with a plurality of layers, which may for example consist of different materials and / or may be produced by different production methods.
- the layer structure has at least one
- the buffer layer is formed with an organic conductive polymer such as PEDOT: PSS or PANI.
- the buffer layer has a thickness of at least 5 ⁇ m, preferably at least 10 ⁇ m, and at most 200 ⁇ m, preferably at most 100 ⁇ m.
- at least 90%, preferably at least 95%, of the thickness of the layer structure may be formed by the thickness of the buffer layer.
- the buffer layer is preferably with a
- Solution-processed procedures may be a
- Printing method such as an inkjet method, a screen printing method, a gravure printing method, or a Flexographic printing, acting.
- the material of the buffer layer can be processed from an aqueous solution. Sometimes the idea is followed, a thick one
- Buffer layer to provide that mechanically protects the organic component from external influences, such as particles.
- a solution-processed method is suitable for the production of the buffer layer. Unlike the usual for the application of
- a solution-processed process is characterized in that a buffer layer having a large thickness can be provided in a short time. So are with one
- a majority of the particles present in the air has a size of up to 5 ym.
- the size of a particle can be here and in the following to the largest lateral
- Extent of the particle in a space dimension act.
- these particles can reach one of the layers of the organic component, in particular the finished first layer stack of the organic component, whereby, for example, the layer lying under this layer in the stacking direction
- Layers can be destroyed in a depression of the organic device. Furthermore, such particles can lead to a short circuit in the organic device. Such particles may be completely entrapped in the buffer layer having a thickness of at least 5 ⁇ m. As a result, the functional layers of the organic component can be protected from the particles.
- the sealing layer is arranged in the stacking direction between the organic component and the buffer layer. For example, the borders
- Sealing layer directly to the second electrode.
- the sealing layer can be applied directly to the
- the sealing layer and the buffer layer are with
- the buffer layer is produced by a solution-processed method, while the sealing layer by means of
- Vapor deposition such as thermal
- the sealing layer may be vapor-deposited on the second electrode.
- the sealing layer and buffer layer may consist of the same materials and / or contain the same materials.
- the sealing layer and the buffer layer may together form the hole transport layer or the electron transport layer of the organic protection diode.
- the buffer layer has at least 10 times the thickness of the sealing layer in the stacking direction.
- the sealing layer is thus a thinly vapor-deposited layer, which is the organic Component preferably encapsulated.
- the sealing layer has, for example, a thickness of at most 1 ⁇ m.
- the sealing layer is in particular intended for the layers of the organic component before the in the
- the sealing layer may be formed with a chemically crosslinkable material.
- a thin sealing layer is insoluble after crosslinking and serves as a protective layer against the subsequently applied from a solution thick buffer layer.
- the second electrode of the organic component is made of a
- Buffer layer used is solvent.
- the second electrode may be formed with aluminum or made of aluminum. Furthermore, at least one
- Electrode covered This allows the organic layers of the first layer stack effectively against the
- solution-processed buffer layer are encapsulated. According to at least one embodiment of the organic
- Component adjoins the sealing layer of the layer structure directly to the second electrode.
- the sealing layer of the layer structure completely covers the second electrode on the outer layer of the second electrode facing away from the first layer stack in the region of the buffer layer. "In the area of the buffer layer” means here and in the
- the sealing layer covers the areas of the second electrode which completely cover the buffer layer, also completely covered.
- the second electrode can be electrically contacted in a region laterally spaced from the buffer layer and is not covered by the sealing layer there.
- the sealing layer can at least in places directly adjoin the first layer stack and directly encapsulate the first layer stack.
- the second layer stack is at its the buffer layer facing
- the second electrode comprises an ALD layer.
- the second electrode may be an ALD layer.
- the ALD layer is produced by atomic layer deposition (ALD). ALD layers are
- a layer produced by means of an ALD method can be clearly distinguished from layers by means of electron microscopic examinations and / or other analytical methods of semiconductor technology, which can be determined by alternative methods such as
- the ALD layer may in particular be electrically conductive
- the ALD layer is coated with a transparent, electrically conductive oxide, such as
- tin oxide for example, tin oxide, indium tin oxide and / or
- Aluminum tin oxide formed or consists of such an oxide.
- Component is the organic component at the
- Layer of the organic protection diode encapsulates the organic component and / or hermetically seals it to the outside.
- Outer surface may be completely covered and / or encapsulated by at least one layer of the organic protective diode.
- the second electrode can be regarded as a layer of the organic component and the organic protective diode.
- FIG. 1 shows a first exemplary embodiment of an organic component described here with reference to FIG. 1
- FIG. 2 shows an equivalent circuit diagram of one here
- FIGS. 3 to 4 show exemplary embodiments of an organic component described here on the basis of schematic sectional representations.
- FIG. 5 shows a distribution of the particle sizes in a clean room of ISO class 5.
- FIG. 6 shows an exemplary photograph of a
- the device comprises a substrate 5, an organic component 1, and an organic protective diode 2.
- the organic component 1 and the organic protective diode 2 follow the substrate 5 in a stacking direction Z.
- the organic component 1 has a first electrode 31, which has a Radiation passage area lc includes.
- Radiation passage area lc hereby faces the substrate 5.
- the substrate 5 and the first electrode 31 may be radiation-transmissive.
- the substrate 5 is formed with a glass or a plastic.
- the first electrode 31 may be provided with a transparent
- conductive oxide such as indium tin oxide may be formed.
- the first layer stack 10 comprises a conductive first layer 11, an emission layer 12 and a conductive second layer 13, which follows the first layer 11 and the emission layer 12 in the stacking direction Z.
- the first layer 11 may be the first electron transport layer of the first
- Layer stack and act in the second layer 13 to the first hole transport layer of the first layer stack. It is alternatively possible that the first layer 11 is the first hole transport layer and the second layer 13 is the first electron transport layer of the first layer stack.
- the first layer stack 10 may also include, in the
- the first layer stack 10 is the first layer stack 10
- Layer stack 10 includes a plurality, preferably in the stacking direction Z superimposed, emission layers 12, which can emit light of different colors, for example. In this way, in particular, an organic Component that emits white light can be provided.
- the second layer 13 is followed by a second electrode 32 in the stacking direction.
- the second electrode 32 is
- the first electrode 31, the first layer stack 10 and the second electrode 32 together form the organic component 1.
- a second layer stack 20 follows the first layer stack 10 in the stacking direction Z. In this case, the second layer stack 20 directly adjoins the second electrode 32.
- the second layer stack has a layer structure 21, a matrix layer 22 and a conductive further layer 23.
- the layer structure 21 may be the second
- the further layer 23 may be the second
- Electron transport layer of the second layer stack The second electron-transport layer of the organic compound
- Protective diode 2 would then be arranged in the stacking direction Z after the second hole transport layer.
- the layer structure 21 is the second electron transport layer and the further layer 23 is the second hole transport layer.
- Hole transport layer should be such that the pn junction of the organic device 1 is connected in anti-parallel to the pn junction of the organic protection diode 2.
- Electrode 42 On the second electron transport layer 23 of the second layer stack 20 in the stacking direction is a third Electrode 42 is arranged.
- the second electrode 32, the second layer stack 20 and the third electrode 42 form
- the second electrode 32 can thus simultaneously the cathode of the organic compound
- Component 1 and the anode of the organic protective diode 2 form. It is alternatively possible for the second electrode to simultaneously form the anode of the organic component 1 and the cathode of the organic protective diode 2.
- the third electrode 42 is one lateral to the first
- the first electrode 31 and the third electrode 42 are electrically conductively connected to each other via the connection layer 34.
- the organic component comprises an organic component 1 and an organic protective diode 2.
- the organic protective diode 2 is connected in antiparallel to the organic component 1.
- the organic protective diode 2 can thus serve as an ESD protection diode for the organic component 1.
- the main extension planes of the respective layers of the first layer sequence 10 and / or of the second layer sequence 20 in the present case extend not only perpendicular to the stacking direction Z but also partially parallel to the stacking direction Z.
- the organic component of FIG. 3 has the first one
- the side surfaces 10 b of the first layer stack 10 are of the second electrode 32
- the organic component 1 has side surfaces 1b. At least one of the side surfaces 1 b of the organic component is in this case completely covered by the layer structure 21. It is possible that the first layer stack 10 by the second electrode 32 before the optional in the
- Layer structure 21 contained solvent protects.
- the second electrode 32 can encapsulate the first layer stack 10 towards the layer structure 21.
- the organic component comprises a
- the second layer stack 20 of the organic protective diode 2 also has at least one side surface 20b, which is completely covered by the third electrode 42 and can be encapsulated by the third electrode 42 to the outside.
- FIG. 4 shows a contact arrangement 320 that is laterally spaced apart from the first layer stack 10 on the substrate 5.
- the contacting 320 is in direct electrical contact with the second electrode 32 and serves for the electrical contacting of the second electrode 32.
- the insulation layer 6 is structured in the illustrated embodiment and surrounds the first layer sequence 10 annularly.
- Embodiment of Figure 4 a sealing layer 211 and a buffer layer 212.
- the buffer layer 212 is
- the sealing layer 211 covers all of the first
- Electrode 32 in the buffer layer 21 completely.
- the sealing layer 211 covers all the areas of the second layer facing the buffer layer 212
- sealing layer 211 seals locations 10f of the first layer stack 10, which are not covered by the second electrode 32, against the buffer layer 212.
- the buffer layer 212 sometimes serves as protection against particles from the surrounding air.
- the sealing layer 211 also serves to protect the organic layers of the organic component 1 from the solvent, which is used to apply the
- Buffer layer 212 is used.
- the ⁇ Buffer layer 212 is used.
- Buffer layer 212 has a thickness in the stacking direction Z of
- the buffer layer 21, and preferably also the layer structure 21, is / are covered on its outer surface facing away from the first layer stack 10 by the matrix layer 22.
- the matrix layer 22 completely covers the layer structure 21 in the regions in which the layer structure 21 is likewise covered by the third electrode 42 and / or the connection layer 34.
- the matrix layer 22 can extend laterally along the layer structure 21 as far as the insulation layer 6 and be in direct contact with the insulation layer 6.
- the second layer stack 20 becomes at its the first
- the third electrode 42 and the connection layer 34 may in this case be the encapsulation of the organic layers of the first layer stack 10 and / or of the second
- Layer stack 20 serve to the outside.
- Buffer layer 212 explained in more detail. Shown is the mean number of particles # per cubic meter as a function of
- Particle size d in ym In a clean room of ISO class 5, which is used to produce an organic device described here, are in particular particles with a maximum particle size of 5 ym. For example, these particles can be used in the production of the organic
- FIG. 6 shows a photograph of a dust particle, the size of which is approximately between 5 ⁇ m and 10 ⁇ m, with a scanning electron microscope (SEM). The dust particle is located in the layer composite of an organic component.
Landscapes
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE112015004174.5T DE112015004174B4 (de) | 2014-09-12 | 2015-09-09 | Organisches Bauelement |
| US15/510,196 US10090365B2 (en) | 2014-09-12 | 2015-09-09 | Organic device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014113198.3 | 2014-09-12 | ||
| DE102014113198 | 2014-09-12 | ||
| DE102014118354.1 | 2014-12-10 | ||
| DE102014118354.1A DE102014118354A1 (de) | 2014-09-12 | 2014-12-10 | Organisches Bauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016038100A1 true WO2016038100A1 (de) | 2016-03-17 |
Family
ID=55405810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2015/070636 Ceased WO2016038100A1 (de) | 2014-09-12 | 2015-09-09 | Organisches bauelement |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10090365B2 (de) |
| DE (2) | DE102014118354A1 (de) |
| WO (1) | WO2016038100A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111149210B (zh) * | 2017-10-06 | 2024-06-11 | 亮锐控股有限公司 | 制造oled器件的方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110049730A1 (en) | 2008-01-30 | 2011-03-03 | Osram Opto Semiconductors Gmbh | Device Comprising an Encapsulation Unit |
| US20110248244A1 (en) * | 2009-10-05 | 2011-10-13 | Emagin Corporation | Independently controlled stacked inverted organic light emitting diodes and a method of manufacturing same |
| US20120132953A1 (en) | 2009-03-24 | 2012-05-31 | Dirk Becker | Thin-Layer Encapsulation for an Optoelectronic Component, Method for the Production Thereof, and Optoelectronic Component |
| WO2013053508A1 (de) * | 2011-10-12 | 2013-04-18 | Osram Opto Semiconductors Gmbh | Organische leuchtdiode |
| WO2014090636A1 (de) * | 2012-12-11 | 2014-06-19 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches bauelement |
| WO2014090626A2 (de) | 2012-12-14 | 2014-06-19 | Osram Opto Semiconductors Gmbh | Organische, optoelektronische bauelementevorrichtung und verfahren zum herstellen einer organischen, optoelektronischen bauelementevorrichtung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008049777A1 (de) | 2008-05-23 | 2009-11-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul |
-
2014
- 2014-12-10 DE DE102014118354.1A patent/DE102014118354A1/de not_active Withdrawn
-
2015
- 2015-09-09 US US15/510,196 patent/US10090365B2/en active Active
- 2015-09-09 WO PCT/EP2015/070636 patent/WO2016038100A1/de not_active Ceased
- 2015-09-09 DE DE112015004174.5T patent/DE112015004174B4/de active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110049730A1 (en) | 2008-01-30 | 2011-03-03 | Osram Opto Semiconductors Gmbh | Device Comprising an Encapsulation Unit |
| US20120132953A1 (en) | 2009-03-24 | 2012-05-31 | Dirk Becker | Thin-Layer Encapsulation for an Optoelectronic Component, Method for the Production Thereof, and Optoelectronic Component |
| US20110248244A1 (en) * | 2009-10-05 | 2011-10-13 | Emagin Corporation | Independently controlled stacked inverted organic light emitting diodes and a method of manufacturing same |
| WO2013053508A1 (de) * | 2011-10-12 | 2013-04-18 | Osram Opto Semiconductors Gmbh | Organische leuchtdiode |
| WO2014090636A1 (de) * | 2012-12-11 | 2014-06-19 | Osram Opto Semiconductors Gmbh | Organisches optoelektronisches bauelement |
| WO2014090626A2 (de) | 2012-12-14 | 2014-06-19 | Osram Opto Semiconductors Gmbh | Organische, optoelektronische bauelementevorrichtung und verfahren zum herstellen einer organischen, optoelektronischen bauelementevorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112015004174B4 (de) | 2021-06-24 |
| DE102014118354A1 (de) | 2016-03-17 |
| US10090365B2 (en) | 2018-10-02 |
| US20170263687A1 (en) | 2017-09-14 |
| DE112015004174A5 (de) | 2017-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2012022657A1 (de) | Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips | |
| WO2009079983A1 (de) | Leuchtdiodenchip mit überspannungsschutz | |
| DE102013100818B4 (de) | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips | |
| DE102013110041B4 (de) | Optoelektronischer Halbleiterchip und optoelektronisches Bauelement | |
| WO2012031858A1 (de) | Dünnschichtverkapselung, optoelektronischer halbleiterkörper mit einer dünnschichtverkapselung und verfahren zur herstellung einer dünnschichtverkapselung | |
| EP3017464B1 (de) | Optoelektronisches bauelement und verfahren zu seiner herstellung | |
| WO2016180810A1 (de) | Optoelektronischer halbleiterchip und leuchtmittel | |
| WO2014076132A1 (de) | Optoelektronisches bauelement | |
| WO2017009292A1 (de) | Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip | |
| DE112015004174B4 (de) | Organisches Bauelement | |
| DE102017107707A1 (de) | Verfahren zur Herstellung eines elektronischen Bauelements und elektronisches Bauelement | |
| WO2021043901A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements | |
| WO2016102584A1 (de) | Optoelektronische baugruppe und verfahren zum herstellen einer optoelektronischen baugruppe | |
| WO2016074891A1 (de) | Optoelektronisches halbleiterbauelement und vorrichtung mit einem optoelektronischen halbleiterbauelement | |
| WO2016042042A1 (de) | Optoelektronische baugruppe und verfahren zum herstellen einer optoelektronischen baugruppe | |
| DE102012109141A1 (de) | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes | |
| DE112015001786B4 (de) | Halbleiterchip und optoelektronisches Bauelement mit Halbleiterchip | |
| DE102012109208B4 (de) | Verfahren zum Bearbeiten einer Vorrichtung mit wenigstens einer elektrischen Schichtenstruktur und Bauelementanordnung hierfür | |
| DE102014223507A1 (de) | Organisches Licht emittierendes Bauelement und Verfahren zur Herstellung eines organischen Licht emittierenden Bauelements | |
| WO2016139209A1 (de) | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements | |
| WO2015082687A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements | |
| DE102015103895B4 (de) | Verfahren zum Herstellen eines organischen Bauelements | |
| DE102016122685A1 (de) | Organisches Bauelement und Verfahren zur Herstellung eines organischen Bauelements | |
| DE102016111320A1 (de) | Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements und organisches lichtemittierendes Bauelement | |
| WO2017198661A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15762584 Country of ref document: EP Kind code of ref document: A1 |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 15510196 Country of ref document: US |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 112015004174 Country of ref document: DE |
|
| REG | Reference to national code |
Ref country code: DE Ref legal event code: R225 Ref document number: 112015004174 Country of ref document: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 15762584 Country of ref document: EP Kind code of ref document: A1 |