WO2016007470A1 - Extended dynamic range charge transimpedance amplifier input cell for light sensor - Google Patents
Extended dynamic range charge transimpedance amplifier input cell for light sensor Download PDFInfo
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- WO2016007470A1 WO2016007470A1 PCT/US2015/039318 US2015039318W WO2016007470A1 WO 2016007470 A1 WO2016007470 A1 WO 2016007470A1 US 2015039318 W US2015039318 W US 2015039318W WO 2016007470 A1 WO2016007470 A1 WO 2016007470A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/70—Charge amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
- H03G1/0094—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated using switched capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/008—Control by switched capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/129—Indexing scheme relating to amplifiers there being a feedback over the complete amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/156—One or more switches are realised in the feedback circuit of the amplifier stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/264—An operational amplifier based integrator or transistor based integrator being used in an amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/297—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising a capacitor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/312—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising one or more switches
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/45—Indexing scheme relating to amplifiers the load of the amplifier being a capacitive element, e.g. CRT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45514—Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45534—Indexing scheme relating to differential amplifiers the FBC comprising multiple switches and being coupled between the LC and the IC
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- H—ELECTRICITY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45536—Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45634—Indexing scheme relating to differential amplifiers the LC comprising one or more switched capacitors
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- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45641—Indexing scheme relating to differential amplifiers the LC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45726—Indexing scheme relating to differential amplifiers the LC comprising more than one switch, which are not cross coupled
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45728—Indexing scheme relating to differential amplifiers the LC comprising one switch
Definitions
- Examples relate to a charge transimpedance amplifier (CTIA) unit cell for a light sensor, capable of automatically, and effectively, accommodating relatively low and relatively high light levels.
- CTIA charge transimpedance amplifier
- Circuitry for a light sensor is often designed to effectively accommodate a relatively low light level or a relatively high light level, but not both.
- a circuit designed for a relatively low light level can saturate when used at a relatively high light level.
- a circuit designed for a relatively high light level can have noise that overwhelms the signal when used at a relatively low light level.
- FIG. 1 is a functional diagram of an example of an image capture device in accordance with some embodiments.
- FIG. 2 is an electrical schematic drawing of an example of a
- FIG. 3 includes plots of examples of a reset signal and output voltages for the CTIA input cell of FIG. 2, in accordance with some embodiments.
- FIG. 4 is an electrical schematic drawing of an example of a
- CTIA input cell in which a summed capacitance can be varied manually, in accordance with some embodiments.
- FIG. 5 is an electrical schematic drawing of an example of a CTIA input cell, in which a summed capacitance can be varied automatically, in accordance with some embodiments.
- FIG. 6 includes plots of examples of a reset signal and output voltages for the CTIA input cell of FIG. 5 , in accordance with some embodiments.
- FIG. 7 is an electrical schematic drawing of an example of a
- CTIA input cell used with a rolling shutter configuration for the image capture device, in accordance with some embodiments.
- FIG. 8 is an electrical schematic drawing of an example of a
- CTIA input cell used with a serial snapshot configuration for the image capture device, in accordance with some embodiments.
- FIG. 9 is an electrical schematic drawing of an example of a
- CTIA input cell used with a one output parallel snapshot configuration for the image capture device, in accordance with some embodiments.
- FIG. 10 is an electrical schematic drawing of an example of a CTIA input cell, used with a two output parallel snapshot configuration for the image capture device, in accordance with some embodiments.
- FIG. 11 is a flow chart of an example of a method of operation for a CTIA input cell, in accordance with some embodiments.
- FIG. 12 is a flow chart of another example of a method of operation for a CTIA input cell, in accordance with some embodiments.
- a charge transimpedance amplifier (CTIA) input cell includes a high gain capacitor configured to integrate charge arising from photocurrent, a low gain capacitor, and a switching element that can switch the low gain capacitor to be electrically coupled in parallel to the high gain capacitor.
- the switching element is a low gain switch, which can be manually activated to switch in the low gain capacitor.
- the low gain switch can be electrically disposed between the low gain capacitor and a source of the photocurrent.
- the switching element is a low gain transistor, which can be automatically activated to switch in the low gain capacitor when a voltage across the high gain capacitor reaches a specified threshold.
- the low gain capacitor can be electrically disposed between the low gain transistor and the source of the photocurrent.
- the CTIA can be single-sided or can be differential.
- image capturing devices such as digital cameras, video cameras, and other photographic and/or image capturing devices. These image capturing devices can use image sensors such as active pixel sensors (APS), arrays of photodiodes, or other suitable light sensing devices in order to capture an image.
- APS active pixel sensors
- an APS can include an array of unit cells that receives light from a lens. Each unit cell in the array generally corresponds to the smallest portion of a digital image, known as a pixel. The light causes each unit cell to accumulate an electric charge proportional to the light intensity at that location. Circuitry and/or software in the image capturing device then interprets the charge accumulated in the unit cell to produce the corresponding pixel of the final image.
- each unit cell in the array includes a component to store the electric charge until it can be read and analyzed.
- this component can be an integration capacitor.
- the size of the integration capacitor can vary according to the specific application of the imaging device, and is usually selected to accommodate the greatest amount of electric charge expected to be encountered for the application.
- Image capturing devices are routinely exposed to both low ambient and high ambient light situations. As a result, it is desirable for an image capturing device to have a high dynamic range, e.g., the ability to perform well in both low ambient and high ambient light situations. In a low ambient light situation such as pictures taken at night, indoors, in shadows, or other situations where there is a relatively low amount of ambient light, the electric charge accumulated in the unit cell will be relatively low. As a result, a relatively small amount of capacitance is needed to store electric charge in low ambient light situations and therefore a relatively small integration capacitor can be desired.
- integration capacitors are chosen to accommodate the greatest amount of electric charge expected to be encountered for a specific application. Because of this, integration capacitors tend to be relatively large in size so that they will not saturate and cause a loss of information. This works well for high ambient light situations which generate larger amounts of electric charge, but is less desirable in low ambient light situations where there is a relatively small amount of electric charge to store. In low ambient light situations, there will be a relatively low signal-to-noise ratio due to the lower electric charge. To combat the low signal-to-noise ratio in these situations, a relatively small integration capacitor is more desirable.
- a unit cell it would be desirable for a unit cell to perform optimally in both low ambient and high ambient light situations (e.g., to have a high dynamic range) while providing a low kTC reset noise.
- FIG. 1 is a block diagram illustrating an image capture device 100 that can be used to capture images.
- device 100 can be a digital camera, video camera, or any other photographic and/or image capturing device.
- Image capture device 100 includes image sensor 102, read out integrated circuit (ROIC) 106, and image processing unit 110.
- ROI read out integrated circuit
- Image sensor 102 can be an APS, an array of photodiodes, or any other suitable light sensing device that can capture images.
- Image sensor 102 can include, for example, a diode, a charge-coupled device (CCD), or any other photovoltaic detector or transducer.
- Image sensor 102 senses a scene as an array of pixels 104, where each pixel receives light from a corresponding portion of an imaged scene, and produces current in response to the received light.
- a read out integrated circuit (ROIC) 106 includes a plurality of charge transimpedance amplifier (CTIA) input cells 108, with each CTIA input cell corresponding to a sensor pixel 104.
- CTIA input cell 108 receives a photocurrent generated by the corresponding sensor pixel 104, integrates the photocurrent for a particular frame duration as a stored charge, and outputs a particular voltage at the end of the frame, the voltage corresponding to the stored charge.
- the CTIA input cells 108 all work in parallel, with the ROIC 106 assembling and correlating the output voltages from the CTIA input cells 108.
- Other types of input cells can also be used, including source/follower, direct injection, buffered direct injection, and others.
- An image processing unit 1 10 can convert the assembled and correlated information from the ROIC 106 into an electronic representation of the image incident on the image sensor 102.
- Image processing unit 110 can be a combination of hardware, software, or firmware that is operable to receive signal information from the ROIC 106 and convert the signal information into an electronic image.
- Examples can also be implemented as instructions stored on a computer-readable storage device, which can be read and executed by at least one processor to perform the operations described herein.
- a computer-readable storage device can include any non-transitory mechanism for storing information in a form readable by a machine (e.g., a computer).
- a computer-readable storage device can include read-only memory (ROM), random-access memory (RAM), magnetic disk storage media, optical storage media, flash-memory devices, and other storage devices and media.
- computer systems can include one or more processors, optionally connected to a network, and can be configured with instructions stored on a computer-readable storage device.
- FIG. 2 is an electrical schematic drawing of an example of a
- the CTIA input cell 200 receives photocurrent generated by sensor pixel 202.
- the output from the sensor pixel 202 is electrically coupled to an input to amplifier 204, to a first side of an integration capacitor 206 having capacitance G N T, and a first side of reset switch 208.
- Amplifier 204 has a constant voltage VREF as its other input, and a variable voltage VOUT as its output.
- the amplifier output is electrically coupled to a second side of the integration capacitor 206, and to a second side of reset switch 208.
- the amplifier output VOUT also forms the output voltage from the known CTIA input cell 200.
- the ROIC periodically opens the reset switch 208 to start each video frame, and closes the reset switch 208 briefly to end each video frame. Closing the reset switch 208 resets the voltage across the integration capacitor 206 to zero volts, plus or minus kTC noise.
- FIG. 3 includes plots of examples of a reset signal 302 and output voltages for the CTIA input cell of FIG. 2, for a particular sensor pixel.
- the reset switch closes at time 308, opens at time 310, closes at time 314, and opens at time 316.
- Plot 304 shows the output voltage V OU T when the light intensity striking the sensor pixel is relatively low.
- the capacitor When the reset switch closes, the capacitor is set to a reset voltage VREF.
- the reset switch opens, the capacitor begins receiving charge from the photocurrent. The charge is said to integrate on the capacitor (206; FIG. 2). As the charge integrated on the capacitor increases, the voltage across the capacitor drops from its initial voltage V OU T. The frame ends at time 314, before the dropping voltage reaches zero.
- a sample and hold element (not shown in FIG. 2) can record the output voltage just prior to the end of the frame. The output voltage corresponds to a particular light intensity at the sensor pixel, averaged over a frame.
- Plot 306 shows the output voltage V OU T when the light intensity striking the sensor pixel is relatively high.
- the relatively high intensity light striking the sensor pixel produces more photocurrent than the relatively low intensity.
- the switch opens at time 310, the charge on the capacitor integrates more quickly, and the output voltage V OU T drops more quickly.
- the capacitor reaches saturation at time 312, after which the output voltage V OU T remains at a minimum value
- VMI N VMI N .
- the image processing unit returns a maximum light level for the saturated pixel.
- saturation is undesirable because high-intensity detail is washed out in the image; all pixels having an intensity greater than a saturation intensity all take on the minimum voltage VMI N .
- FIG. 4 is an electrical schematic drawing of an example of a
- CTIA input cell 400 in which a summed capacitance can be varied manually.
- the different summed capacitance values can accommodate both a low gain configuration, corresponding to a relatively high light intensity and a relatively high capacitance value, and a high gain configuration, corresponding to a relatively low light intensity and a relatively low capacitance value.
- the configuration of FIG. 4 is but one example; other configurations can also be used.
- a sensor pixel 402 produces photocurrent in response to light incident thereon.
- the sensor pixel 402 output is electrically coupled to a first input to an amplifier 404, a first side of a high gain capacitor 406 having capacitance CH G , a first side of a low gain switch 410, and a first side of a reset switch 412.
- the amplifier 404 has a constant voltage VREF as its second input, and a variable voltage VOUT as its output.
- the amplifier output is electrically coupled to the second side of the high gain capacitor 406, to a first side of a low gain capacitor 408 having capacitance CLG where CLG can be greater than CHG, and to a second side of the reset switch 412.
- the second side of the low gain switch 410 is electrically coupled to the second side of the low gain capacitor 408.
- the ROIC periodically opens the reset switch 412 to start each video frame, and closes the reset switch 412 briefly to end each video frame.
- the configuration of FIG. 4 can be referred to as a conventional global dual gain input cell.
- the ROIC actively, and manually, switches between high gain and low gain by opening or closing the low gain switch 410.
- the low gain switch 410 When the gain is high, the low gain switch 410 is open, and charge integrates on only the high gain capacitor 406.
- the ROIC actively changes the gain from high to low by closing the low gain switch 410, thereby connecting the low gain capacitor 408 in parallel with the high gain capacitor and summing their capacitances.
- charge integrates on both the high gain capacitor 406 and the low gain capacitor 408.
- the ROIC switches between high gain and low gain for all pixels, together, and does so on a video frame-by-frame basis. For a particular frame, the ROIC sets all the pixels to high gain, or all the pixels to low gain. The ROIC typically does not switch gains during a frame, and typically only switches gain between frames.
- FIG. 5 is an electrical schematic drawing of an example of a
- the different summed capacitance values can accommodate both a low gain configuration, corresponding to a relatively high light intensity and a relatively high capacitance value, and a high gain configuration, corresponding to a relatively low light intensity and a relatively low capacitance value.
- the configuration of FIG. 5 is but one example; other configurations can also be used.
- the sensor pixel 502, amplifier 504, high gain capacitor 506, and reset switch 512 are similar in structure and function to similarly numbered elements 4xx in FIG. 4.
- the configuration of FIG. 5 replaces the low gain switch 410 with a low gain transistor 510, and moves the low gain capacitor to the opposite side of the switch/transistor.
- Low gain transistor 510 can be an NFET element.
- Low gain transistor 510 functions as an open circuit for output voltages VOUT greater than a threshold voltage below VLG.
- Low gain transistor 510 functions as a conductor for output voltages VOUT less than the threshold voltage below VLG.
- the output voltage is relatively high, the low gain transistor 510 remains open, the low gain capacitor 508 is removed from the circuit, and the charge integrates on the high gain capacitor 506. If the output voltages VOUT decreases to the threshold voltage below VLG, the low gain transistor 510 inserts the low gain capacitor 508 into the circuit, and for the remainder of the frame, any further charge integrates on both the high gain capacitor 506 and the low gain capacitor 508.
- Potential advantages to the automatic switching in of the low gain transistor 510 include allowing for per pixel dual gain, and keeping dual gain always active (as opposed to selecting either a high gain or a low gain at the beginning of a frame).
- FIG. 6 includes plots of examples of a reset signal 602 and output voltages for the CTIA input cell of FIG. 5, for a particular sensor pixel.
- the reset switch closes at time 608, opens at time 610, closes at time 616, and opens at time 618.
- the output voltage VOUT falls to a threshold voltage VTH below VLG, thereby triggering the low gain transistor (510; FIG. 5) to insert the low gain capacitor (508; FIG. 5).
- the high gain voltage is sampled.
- the CTIA input cell is switched to a low gain configuration, where the total integrating capacitance is increased, thereby reducing the slope of the curve 606 between time 614 and the end of the frame at time 616.
- the low gain voltage is sampled just before time 616. Both the high gain voltage and the low gain voltage are read for each pixel.
- FIGS. 2, 4, and 5 have been simplified for clarity.
- the configuration of the image capture device can dictate the configuration of the CTIA input cell circuitry.
- FIGS. 7-10 Four circuitry examples are shown in FIGS. 7-10, for four device configurations; other circuits and configurations are also possible.
- FIG. 7 is an electrical schematic drawing of an example of a
- CTIA input cell 700 used with a rolling shutter configuration for the image capture device.
- FIG. 8 is an electrical schematic drawing of an example of a CTIA input cell 800, used with a serial snapshot configuration for the image capture device.
- FIG. 9 is an electrical schematic drawing of an example of a
- CTIA input cell 900 used with a one output parallel snapshot configuration for the image capture device.
- FIG. 10 is an electrical schematic drawing of an example of a
- CTIA input cell 1000 used with a two output parallel snapshot configuration for the image capture device.
- FIG. 11 is a flow chart of an example of a method of operation
- Such a method 1100 can be executed on the CTIA input cell 500 of FIG. 5, or on other suitable CTIA input cells.
- the method 1100 is but one example of a method of operation; other suitable methods of operation can also be used.
- method 1100 resets all the integrating capacitors in the
- CTIA input cell examples of such capacitors can include high gain capacitor 506 (FIG. 5) and low gain capacitor 508 (FIG. 5).
- a high gain capacitor such as 506 (FIG. 5) integrates charge arising from photocurrent.
- method 1100 samples the high gain capacitor. If the high gain capacitor is saturated, then a low gain capacitor can be automatically activated at saturation, which can absorb excess charge.
- method 1100 switches in the low gain capacitor. If the low gain capacitor is saturated, then the low gain capacitor has already been activated. The low gain capacitor can be switched in, regardless of whether the high gain capacitor is saturated.
- method 1100 samples the low gain capacitor.
- method 1100 reads the low gain capacitor and the high gain capacitor.
- FIG. 12 is a flow chart of another example of a method 1200 of operating a CTIA input cell, such as CTIA input cell 500 of FIG. 5. This flow chart assumes that there is saturation at the high gain capacitor, and omits the decision steps.
- method 1200 produces photocurrent from a sensor pixel having light incident thereon.
- method 1200 resets a high gain capacitor and a low gain capacitor to respective specified reset voltages at a beginning of a video frame. In some examples, the specified reset voltages are the same; in other examples, they can differ.
- method 1200 integrates charge arising from the photocurrent on the high gain capacitor. The method 1200 senses a voltage across the high gain capacitor. If the sensed voltage has dropped to a specified threshold voltage, then at 1208 method 1200 automatically activates the low gain capacitor to be electrically coupled in parallel with the high gain capacitor. Method 1200 switches in the low gain capacitor. Switching in the low gain capacitor allows the voltage on the sum of the capacitors to be read.
- method 1200 integrates the charge arising from the photocurrent on both the low gain capacitor and the high gain capacitor.
- Method 1200 samples a second voltage across both the low gain capacitor and the high gain capacitor.
- method 1200 returns the first and second voltages at an end of the video frame. The first and second voltages correspond to a light intensity incident on the sensor pixel integrated over the video frame.
- the method 1200 of FIG. 12 is configured to sense one frame of video. The method can be repeated as needed to sense a sequence of video frames.
- the CTIA input cell can include three capacitors, rather than two. When a first of the three capacitors reaches saturation, a first transistor switches in a second capacitor in parallel to the first capacitor. When the second of the three capacitors reaches saturation, a second transistor switches in a third capacitor in parallel to the first and second capacitors. Such a configuration can automatically switch among three gain levels, with the gain level for each pixel being automatically switched independent of the other pixels.
- the CTIA input cell can include four, five, six, or more than six capacitors.
- configurations can also include three, four, five, or more than five transistors to switch in the respective capacitors as needed.
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Abstract
Description
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL249564A IL249564A0 (en) | 2014-07-08 | 2016-12-14 | An extended dynamic range charge transimpedance amplifier input cell for a light sensor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/325,744 | 2014-07-08 | ||
| US14/325,744 US20160014366A1 (en) | 2014-07-08 | 2014-07-08 | Extended dynamic range charge transimpedance amplifier input cell for light sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016007470A1 true WO2016007470A1 (en) | 2016-01-14 |
Family
ID=53682857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2015/039318 Ceased WO2016007470A1 (en) | 2014-07-08 | 2015-07-07 | Extended dynamic range charge transimpedance amplifier input cell for light sensor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20160014366A1 (en) |
| IL (1) | IL249564A0 (en) |
| TW (1) | TWI566521B (en) |
| WO (1) | WO2016007470A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9661251B1 (en) * | 2015-10-30 | 2017-05-23 | Sony Semiconductor Solutions Corporation | Adaptive gain control using sample-and-hold circuit for analog CDS |
| US10263636B2 (en) * | 2017-06-07 | 2019-04-16 | Motorola Solutions, Inc. | Scalable dynamic range analog-to-digital converter system |
| US10574913B2 (en) | 2017-09-07 | 2020-02-25 | Teledyne Scientific & Imaging, Llc | High dynamic range CTIA pixel |
| FR3085571B1 (en) | 2018-09-03 | 2021-06-25 | First Light Imaging | HIGH ACQUISITION SPEED IMAGING DEVICE WITH WIDE DYNAMIC RANGE |
| US11356622B1 (en) * | 2021-03-26 | 2022-06-07 | Raytheon Company | Single-ended capacitive trans-impedance amplifier (CTIA) unit cell for two-color applications |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198660A (en) * | 1990-08-30 | 1993-03-30 | Fuji Electric Co., Ltd. | Optical sensing circuit including an integral capacity |
| US5602511A (en) * | 1995-06-07 | 1997-02-11 | Santa Barbara Research Center | Capacitive transimpedance amplifier having dynamic compression |
| EP0813338A2 (en) * | 1996-06-13 | 1997-12-17 | Rockwell International Corporation | Low noise amplifier for passive pixel cmos imager |
| US6246284B1 (en) * | 2000-02-15 | 2001-06-12 | Oki Electric Industry Co., Ltd. | Negative feedback amplifier with automatic gain control function |
| US6614286B1 (en) * | 2001-06-12 | 2003-09-02 | Analog Devices, Inc. | Auto-ranging current integration circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6459078B1 (en) * | 2000-12-04 | 2002-10-01 | Pixel Devices International, Inc. | Image sensor utilizing a low FPN high gain capacitive transimpedance amplifier |
| JP3844699B2 (en) * | 2001-02-19 | 2006-11-15 | イノテック株式会社 | Variable gain amplifier |
| JP5106052B2 (en) * | 2007-11-08 | 2012-12-26 | キヤノン株式会社 | Solid-state imaging device, imaging system, and solid-state imaging device driving method |
| US9219449B2 (en) * | 2012-07-24 | 2015-12-22 | Forza Silicon Corporation | CTIA for IR readout integrated circuits using single ended OPAMP with in-pixel voltage regulator |
| US8987647B2 (en) * | 2012-10-04 | 2015-03-24 | Sri International | Low power wide dynamic range CMOS imager output circuit having a threshold detector to set a gain to be applied by a readout circuitry |
-
2014
- 2014-07-08 US US14/325,744 patent/US20160014366A1/en not_active Abandoned
-
2015
- 2015-06-11 TW TW104118912A patent/TWI566521B/en not_active IP Right Cessation
- 2015-07-07 WO PCT/US2015/039318 patent/WO2016007470A1/en not_active Ceased
-
2016
- 2016-12-14 IL IL249564A patent/IL249564A0/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198660A (en) * | 1990-08-30 | 1993-03-30 | Fuji Electric Co., Ltd. | Optical sensing circuit including an integral capacity |
| US5602511A (en) * | 1995-06-07 | 1997-02-11 | Santa Barbara Research Center | Capacitive transimpedance amplifier having dynamic compression |
| EP0813338A2 (en) * | 1996-06-13 | 1997-12-17 | Rockwell International Corporation | Low noise amplifier for passive pixel cmos imager |
| US6246284B1 (en) * | 2000-02-15 | 2001-06-12 | Oki Electric Industry Co., Ltd. | Negative feedback amplifier with automatic gain control function |
| US6614286B1 (en) * | 2001-06-12 | 2003-09-02 | Analog Devices, Inc. | Auto-ranging current integration circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI566521B (en) | 2017-01-11 |
| IL249564A0 (en) | 2017-02-28 |
| US20160014366A1 (en) | 2016-01-14 |
| TW201607243A (en) | 2016-02-16 |
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