WO2016002633A1 - スパッタリング用ターゲット材とその製造方法 - Google Patents
スパッタリング用ターゲット材とその製造方法 Download PDFInfo
- Publication number
- WO2016002633A1 WO2016002633A1 PCT/JP2015/068383 JP2015068383W WO2016002633A1 WO 2016002633 A1 WO2016002633 A1 WO 2016002633A1 JP 2015068383 W JP2015068383 W JP 2015068383W WO 2016002633 A1 WO2016002633 A1 WO 2016002633A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sputtering
- target material
- grinding
- sputtering target
- target
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/403—Refractory metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/405—Iron metal group, e.g. Co or Ni
- C04B2237/406—Iron, e.g. steel
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
Definitions
- the present invention relates to a sputtering target material and a manufacturing method thereof. Furthermore, the present invention relates to a sputtering target using this sputtering target material, and more particularly to a connected sputtering target using this sputtering target material as a split target material and a method for manufacturing the same.
- a transparent conductive film generally has high conductivity and high transmittance in the visible region. For this reason, it is used as a transparent electrode for solar cells, liquid crystal display elements, and other light receiving elements. In addition, it is also used as a transparent heating element for anti-fogging, such as automobile windows, architectural heat ray reflective films, antistatic films, and refrigerated showcases.
- a transparent conductive film made of tin oxide containing antimony or fluorine as a dopant, zinc oxide containing aluminum or gallium as a dopant, or indium oxide (ITO) containing tin as a dopant is used.
- a transparent conductive film made of indium oxide (ITO) containing tin is widely used industrially because it has a low resistance and can be formed relatively easily.
- a spray method As a method for forming such a transparent conductive film, a spray method, a vapor deposition method, an ion plating method, a sputtering method, and the like are known.
- the sputtering method is widely used industrially because it has high productivity and can easily obtain a high-quality transparent conductive film.
- a sputtering target is used in which a target material as a film forming material source is bonded to a backing body through a bonding layer.
- a target material has a problem that nodules are formed on the sputtering surface during discharge.
- This nodule causes abnormal discharge (arcing) and generation of particles, and these abnormalities cause defects such as pinholes in the obtained transparent conductive film. For this reason, it is necessary to remove nodules from the sputtering surface even during the film forming operation, and the presence of nodules is a major factor that reduces the productivity of the transparent conductive film.
- the problem caused by this nodule appears remarkably in a sputtering method using a connected target material in which a plurality of divided target materials are connected.
- nodules occur mainly at the boundary between the erosion part and non-erosion part of the target material and its vicinity (boundary region), and the surface roughness in this boundary region affects the generation of nodules. ing. Therefore, in order to suppress the generation of nodules, it is necessary to appropriately control the surface roughness of the boundary region.
- the surface roughness of the sputtering surface is 0.8 ⁇ m or less in arithmetic average roughness Ra and 7.0 ⁇ m or less in maximum height Rz, or It is described that the ten-point average roughness Rz JIS is controlled so as to be 0.8 ⁇ m or less. Since this target material has a smooth sputtering surface with very few irregularities, generation of nodules during discharge is stably suppressed.
- JP 2004-315931 A discloses an arithmetic average of the surface roughness of the top surface of the non-erosion portion while the surface of the erosion portion is smoothed in the flat target material made of an oxide sintered body. It is described that the roughness Ra is 2.0 ⁇ m or more.
- the peeling of the sputtered particles adhering to the non-erosion portion is suppressed by the anchor effect, and the occurrence of arcing due to the peeling of the sputtered particles is prevented.
- sputtered particles accumulate in the shape of protrusions on the non-erosion part to form nodules, and arcing may occur starting from the nodule protrusions.
- An object of the present invention is to provide a sputtering target that generates very little arcing and nodules. Moreover, an object of this invention is to provide the manufacturing method which can mass-produce such a sputtering target efficiently.
- the present invention is a sputtering target material comprising an oxide sintered body and having a sputtering surface, wherein the surface roughness of the sputtering surface is 0.9 ⁇ m or more in terms of arithmetic average roughness Ra and a maximum height Rz. It is 10.0 ⁇ m or less and has a ten-point average roughness Rz JIS of 7.0 ⁇ m or less.
- the arithmetic average roughness Ra is preferably in the range of 0.9 ⁇ m to 1,5 ⁇ m, and more preferably in the range of 0.95 ⁇ m to 1,2 ⁇ m.
- the maximum height Rz is preferably in the range of 5,000 ⁇ m to 10.0 ⁇ m, and more preferably in the range of 6.0 ⁇ m to 8.0 ⁇ m.
- the ten-point average roughness Rz JIS is preferably in the range of 4.0 ⁇ m to 7.0 ⁇ m, and more preferably in the range of 4.5 ⁇ m to 6.5 ⁇ m.
- the manufacturing method of the sputtering target material of the present invention includes a processing step of processing a material made of an oxide sintered body to obtain a sputtering target material, and in the processing step, the sputtering target among the materials.
- the surface to be the sputtering surface of the material is subjected to rough grinding using a grindstone having a predetermined count, and then subjected to zero grinding, so that the surface roughness of the sputtering surface is 0. 0 in terms of arithmetic average roughness Ra. It is characterized by being 9 ⁇ m or more, a maximum height Rz of 10.0 ⁇ m or less, and a ten-point average roughness Rz JIS of 7.0 ⁇ m or less.
- the arithmetic average roughness Ra is in the range of 0.9 ⁇ m to 1.5 ⁇ m
- the maximum height Rz is in the range of 5.0 ⁇ m to 10.0 ⁇ m
- the ten-point average roughness Rz JIS is 4.0 ⁇ m to 7. It is preferable to be 0 ⁇ m.
- the rough grinding is preferably performed using a grindstone in the range of counts # 100 to # 170, and the zero grinding is preferably performed using a grindstone in the range of counts # 140 to # 400.
- the rough grinding is preferably performed in 2 to 4 times, and the zero grinding is preferably performed in 2 to 6 times.
- finish grinding using a grindstone in the range of counts # 140 to # 400 is performed once to four times.
- the sputtering target of the present invention comprises a backing body and a sputtering target material joined to the backing body via a joining layer, and the sputtering target material of the present invention is used as the sputtering target material. It is characterized by.
- the present invention is particularly applicable to a connected sputtering target composed of a plurality of divided target materials.
- the present invention can be applied to any sputtering target using a flat or cylindrical sputtering target material.
- the backing body is a cylindrical backing tube, and the sputtering target material is It is suitably applied to a cylindrical sputtering target having a cylindrical shape.
- the method for manufacturing a sputtering target of the present invention includes a bonding step of bonding the sputtering target material of the present invention to a backing body through a bonding layer to obtain a sputtering target.
- the present invention is particularly preferably applied to a method of manufacturing a connected sputtering target composed of a plurality of divided target materials arranged adjacent to each other, and in this case, the present invention includes the sputtering of the present invention as each of the plurality of divided target materials. And a step of joining the plurality of divided target materials to the backing body so that the distance between the opposing end surfaces of the adjacent divided target materials is 0.1 mm or more and 1.0 mm or less. It has the characteristics.
- the present invention it is possible to provide a sputtering target that generates extremely little arcing and nodules, including the case where a connected sputtering target having a plurality of divided target materials is employed. Moreover, according to the present invention, it is possible to efficiently mass-produce such a sputtering target. For this reason, the industrial significance of the present invention is very great.
- FIG. 1 is a perspective view showing a flat sputtering target to which the present invention is applied.
- FIG. 2 is an enlarged view of a portion A in FIG.
- FIG. 3 is a perspective view showing a cylindrical sputtering target to which the present invention is applied.
- FIG. 4 is an enlarged view of a portion B in FIG.
- the inventors of the present invention form the surface of the non-erosion part to be rough to some extent in order to prevent the particles deposited on the non-erosion part of the sputtering target from peeling off. It was concluded that this was effective.
- the present inventors regulate the surface roughness of the sputtering surface not only with the arithmetic average roughness Ra, but also with the maximum height Rz and the ten-point average roughness Rz JIS .
- Ra arithmetic average roughness
- Rz the maximum height
- Rz the maximum height
- Rz JIS the maximum height
- the present invention has been completed based on these findings.
- the present invention is divided into “1. Sputtering target material”, “2. Sputtering target material manufacturing method”, “3. Sputtering target”, and “4. Sputtering target manufacturing method”. Details will be described with reference to FIGS.
- Sputtering Target Material a) Material
- the present invention is directed to a sputtering target material (hereinafter referred to as “target material”) (3, 13) made of an oxide sintered body.
- target material a sputtering target material made of an oxide sintered body.
- a target material made of an oxide sintered body generally provides a transparent conductive film with little change in resistance value and transmittance over time in comparison with a metal target material containing an alloy, and While the film forming conditions can be easily controlled, nodules are easily generated during sputtering.
- the type of the oxide sintered body is not particularly limited, and indium (In), tin (Sn), zinc (Zn), aluminum (Al), niobium (Nb), tantalum (Ta),
- an oxide sintered body mainly containing at least one selected from titanium (Ti) can be used.
- an oxide sintered body mainly composed of indium oxide (In 2 O 3 ) or zinc oxide (ZnO), which is easily compatible with the low melting point bonding material, can be preferably used.
- the present invention relates to indium oxide (ITO) containing tin, indium oxide (ICO) containing cerium (Ce), indium oxide (IGO) containing gallium (Ga), and oxidation containing titanium.
- ITO indium oxide
- IWO indium oxide
- IYO indium oxide
- INO indium oxide
- IYO indium oxide
- INO indium oxide
- IYO yttrium
- I indium oxide
- INO indium oxide
- IYO containing yttrium
- I indium oxide (INiO) containing nickel (Ni), scandium (Sc) Containing indium oxide (IScO) containing silicon (Si), indium oxide containing germanium (Ge) (IGeO), indium oxide containing hafnium (Hf) (IHfO), and tantalum Oxidation containing indium oxide (ITaO) and iron (Fe) Contains indium (IFeO), indium oxide (PRrO)
- the present invention also relates to zinc oxide containing aluminum (AZO), zinc oxide containing gallium (GZO), zinc oxide containing indium (In) (ZIO), and zinc oxide containing magnesium oxide (MgO) ( ZMgO), zinc oxide (ZTO) containing tin oxide (SnO 2 ), zinc oxide containing gallium and aluminum (GAZO), or an oxide composed of tin oxide (ZZO) containing zinc oxide (ZnO)
- AZO zinc oxide containing aluminum
- GZO zinc oxide containing gallium
- ZIO zinc oxide containing indium (In)
- ZMgO zinc oxide containing magnesium oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc oxide
- ZTO zinc
- the present invention is not limited by the shape of the target material (3, 13), and can be applied to both the flat target material (3) and the cylindrical target material (13). Further, the present invention is not limited by the size of the target material (3, 13) and can be applied to the target material (3, 13) of various sizes.
- a plurality of divided target materials (3a to 3f, 13a to 13f) are respectively bonded to the bonding layer ( 4 and 14), a connected sputtering target (1, 11) having a structure joined so as to be adjacent to the backing body (2, 12) is generally used.
- the present invention can also be suitably applied to the connection target materials (3, 13) used for (1, 11).
- the sputtering surface (5, 15) can be used for either the flat plate target material (3) or the cylindrical target material (13).
- the arithmetic average roughness Ra, the maximum height Rz, and the ten-point average roughness Rz JIS can be measured by a method according to JIS B 0601 (2013) using a surface roughness and contour shape measuring machine. is there.
- the arithmetic average roughness Ra is controlled to 0.9 ⁇ m or more, preferably 0.95 ⁇ m or more.
- the arithmetic average roughness Ra is less than 0.9 ⁇ m, when the sputtered particles flying during sputtering reattach to the sputtering surface (5, 15), particularly the non-erosion portion, and become a deposit, the anchor for the deposit The effect cannot be made to work sufficiently. For this reason, delamination of the deposits causes arcing.
- the upper limit of the arithmetic average roughness Ra is substantially limited by the control of the maximum height Rz and the ten-point average roughness Rz JIS , but is preferably 1.5 ⁇ m or less, and is 1.2 ⁇ m or less. It is more preferable.
- the maximum height Rz is controlled to 10.0 ⁇ m or less, preferably 8.0 ⁇ m or less.
- the lower limit of the maximum height Rz is substantially limited by the control of the arithmetic average roughness Ra, but is preferably 5.0 ⁇ m or more, and more preferably 6.0 ⁇ m or more.
- the ten-point average roughness Rz JIS is controlled to 7.0 ⁇ m or less, preferably 6.5 ⁇ m or less.
- the anchor effect becomes excessively large, and the sputtered particles adhering to the sputtering surface (5, 15) grow in a protruding shape and become nodules.
- the lower limit of the ten-point average roughness Rz JIS is also substantially limited by the control of the arithmetic average roughness Ra, but is preferably 4.0 ⁇ m or more, and more preferably 4.5 ⁇ m or more.
- the surface roughness of these non-sputtering surfaces is not limited in principle.
- the surface roughness is 0.9 ⁇ m or more in arithmetic average roughness Ra, 10.0 ⁇ m or less in maximum height Rz, and 7.0 ⁇ m or less in ten-point average roughness Rz JIS. It can be controlled and is preferable.
- the method for producing a target material of the present invention includes a processing step of obtaining a target material by processing an oxide sintered body to have a predetermined shape and a predetermined surface roughness.
- this invention is applicable to both the target material which consists of flat oxide sintered compact, and the target material which consists of cylindrical oxide sintered compact.
- the upper surface of the flat plate oxide sintered body and the outer peripheral surface of the cylindrical oxide sintered body are the sputtering surfaces in the sputtering target of the present invention.
- grinding is performed on these surfaces to be sputtering surfaces using a grindstone with a predetermined count.
- the surface roughness of the sputtering surface is 0.9 ⁇ m or more in arithmetic average roughness Ra, 10.0 ⁇ m or less in maximum height Rz, and 7. in ten-point average roughness Rz JIS . It is important that the thickness is 0 ⁇ m or less.
- one or more rough grindings and one or more zero grindings preferably one or more rough grindings, one or more finish grindings, and one or more zero grindings are performed.
- a) Manufacturing method of flat target material When manufacturing a flat target material, first, it grinds with respect to the upper surface used as a sputtering surface among each surface of a flat oxide sintered compact using a surface grinder. Apply. At this time, the surface roughness of the upper surface, that is, the arithmetic average roughness Ra, the maximum height Rz, and the ten-point average roughness Rz JIS is at least once with respect to the above-mentioned surface so that the JIS is within the predetermined range. Rough grinding and one or more zero grindings. Next, using a surface grinder, a slicing machine, a grinding center, a machining center, etc., the side surface and end surface of the flat plate oxide sintered body are ground.
- a flat oxide sintered compact is adjusted to a predetermined dimension.
- the order of processing the upper surface, the side surface, and the end surface is not particularly limited, and the upper surface is processed after processing the side surface and the end surface as long as the surface roughness of the upper surface can be controlled within the predetermined range. It may be processed.
- the cylindrical oxide sintered body has a fixed chucking strength with sufficient fixing strength only by a known chucking method in the above-described processing due to its unique shape and low strength. It cannot be fixed to the (fixing jig), and a positional shift or a crack may occur during processing. For this reason, in addition to a known chucking method, it is preferable to fix to a chucking jig via an adhesive or the like, and to work after improving the fixing strength.
- sputtering surface is performed using a relatively rough grindstone. Specifically, it is preferable to use a grindstone with a count # 100 to # 170, more preferably a grindstone with a count # 120 to # 170, and further to use a grindstone with a count # 120 to # 140. preferable. By using such a relatively large grindstone, rough grinding can be performed with high work efficiency. Further, a sputtering surface having a predetermined surface roughness can be easily formed by zero grinding or finish grinding.
- a part of the surface to be ground is deeply ground, and a large step is formed between the ground portion and the unground portion of the surface to be ground. Since the step formed on the surface to be ground and the end surface of the grindstone are in contact with each other, the grindstone is shaken, and uniform grinding cannot be performed over the entire surface to be ground with only one grinding. In order to avoid this, the sputtering surface is ground in several steps.
- the contact between the surface of the surface to be ground and the side of the grindstone prevents the grinding fluid from entering the grinding surface being ground, resulting in insufficient cooling of the ground surface, resulting in grinding and scoring, and efficient removal of chips. Otherwise, the grindstone may become clogged and the grinding speed may be reduced. It is desirable to determine the amount of grinding once so that these problems do not occur.
- the grinding amount per time is preferably 2 mm or less, and more preferably 1 mm or less.
- the lower limit is not particularly limited, but as the number of grinding increases, the number of times of handling increases and the productivity decreases, so the grinding amount per grinding is set to 300 ⁇ m or more so that the number of times of grinding is about 2 to 4 times. It is preferable to set it to 500 ⁇ m or more.
- the amount of cutting once is 30 ⁇ m or less, and more preferably 15 ⁇ m or less.
- the amount of cutting once may be selected from a range of about ⁇ 0.01 mm / second to ⁇ 0.20 mm / second.
- finish grinding is performed on the work surface after rough grinding.
- finish grinding is performed on the work surface after rough grinding.
- the surface grinding of the sputtering surface using a grindstone of a predetermined count, by performing one or more rough grinding and one or more zero grinding, if the sputtering surface is in the above predetermined range, It is not necessary to perform finish grinding, and the process of finish grinding is arbitrary.
- the surface condition and surface roughness after grinding are stabilized, distortions generated during grinding, and oxides to be ground From the viewpoint of reducing the load on the sintered body, it is preferable to employ finish grinding.
- finish grinding a grindstone with a smaller count than rough grinding is used. Normally, when a grindstone with count # 100 to # 170 is used for rough grinding, a fine grindstone with count # 600 to # 800 is used for finish grinding. However, when finish grinding is used as surface grinding of the sputtering surface in the present invention, a grindstone with count # 140 to # 400 is used from the viewpoint of setting the surface roughness of the sputtering surface to 0.9 ⁇ m in terms of arithmetic average roughness Ra. It is enough. It is more preferable to use a grindstone with counts # 170 to # 325.
- the cutting amount (feed amount of the grindstone) in finish grinding is also arbitrary, but in the case of a flat plate oxide sintered body, it is usually preferably 10 ⁇ m or less, and preferably 1 ⁇ m to 5 ⁇ m. Is more preferable.
- a cylindrical oxide sintered body ⁇ 0.01 mm / second to ⁇ 0.15 mm / second is preferable, and ⁇ 0.03 mm / second to ⁇ 0.1 mm / second, for the same reason as rough grinding. It is more preferable.
- the load on the oxide sintered body during grinding is smaller than in rough grinding, and there is no particular problem even if the number of times of grinding is one per surface.
- the number of times of grinding be 2 to 4 as in the case of rough grinding. This is because a grinding wheel having a relatively fine count is often used for finish grinding, and a grinding wheel having a large count is likely to be clogged, so that the grinding ability tends to be lowered. When the grinding ability is reduced, grinding burn, chipping, and distortion occur in the grindstone, which causes problems such as warpage on the sputtering surface.
- finishing since finishing is close to the finished surface condition, it is important not to cause such problems, and it is possible to eliminate these problems by increasing the number of machining operations and removing distortion. It becomes.
- the number of times of finish grinding is 5 times or more, although depending on the grinding conditions, not only an effect cannot be expected, but work efficiency is deteriorated or the arithmetic average roughness Ra on the sputtering surface is less than 0.9 ⁇ m. It may become.
- the amount of grinding at one time is not particularly limited, but is selected in the range of 5 ⁇ m to 400 ⁇ m depending on the target grinding amount and the number of times of grinding.
- Zero grinding means that the processing jig is moved so as to slide on the processing surface, that is, the grinding stone is rotated and the grinding sound is generated by rotating the grindstone without giving a cut (the cut amount is “0”). This is a processing method in which the processing is continued until there is no more and the projections existing on the processing surface are ground.
- the grindstone used in zero grinding is not particularly limited, and the grindstone used in rough grinding or finish grinding may be used as it is, or a grindstone having a different count from these grindstones may be used. .
- the maximum height Rz and ten-point average roughness Rz JIS of the sputtering surface may become too large, and it may be difficult to suppress the occurrence of arcing and nodules during sputtering.
- a grindstone exceeding the count # 400 a long time is required for zero grinding, resulting in a deterioration in productivity.
- the zero grinding is preferably divided into a plurality of times, rather than grinding only once per surface, like the rough grinding. Specifically, it is preferable to grind in 2 to 6 times per surface.
- the sputtering target of this invention consists of a backing main body, the target material joined to the backing main body, and the joining layer between a backing main body and a target material like the past.
- the sputtering target of the present invention is characterized by using the above-described target material as a target material.
- Target material In the sputtering target (1, 11) of the present invention, the target material (3, 13) described above is used as the target material.
- the target material (3, 13) a connected target material obtained by connecting a plurality of divided target materials (3a to 3f, 13a to 13f) can also be used.
- vision interval When the present invention is applied to the connected target material (3, 13), the distance between the adjacent side surface (6) and end surface (16) of the adjacent divided target materials (3a to 3f, 13a to 13f) (hereinafter referred to as “division interval”). ”) Is preferably 0.1 mm or more and 1.0 mm or less, and more preferably 0.3 mm or more and 0.6 mm or less. If the division interval is less than 0.1 mm, adjacent division target materials (3a to 3f, 13a to 13f) come into contact with each other due to thermal expansion during film formation, and the division target materials (3a to 3f, 13a to 13f) are missing. As a result, arcing and nodules may occur from this chipping.
- the division interval is preferably set to about 0.1 mm to 0.5 mm.
- the division interval is set to about 1.0 mm exceeding 0.5 mm, it is possible to sufficiently suppress the occurrence of arcing and nodules, so that the work efficiency can be improved. is there.
- the material of the backing body (2, 12), that is, the backing plate (2) and the backing tube (12) is not particularly limited, and a known material is used. can do.
- a backing body made of copper or copper alloy, titanium or titanium alloy, molybdenum or molybdenum alloy, or aluminum or aluminum alloy can be used in addition to a general austenitic stainless backing material such as SUS304.
- SUS304 general austenitic stainless backing material
- some of these have a passive film or an oxide film on the surface thereof, and are inferior in the bonding property with the bonding material.
- the shape of the backing plate (2) is not particularly limited as long as the flat target material (3) does not protrude during bonding. Further, the thickness of the backing plate (2) is not particularly limited as long as it is not thick enough to be bent during handling.
- the backing plate (2) when the backing plate (2) is repeatedly used or when the difference between the thermal expansion coefficients of the flat target material (3) and the backing plate (2) is large, the sputtering target (1) is warped. There is a fear. In such a case, when the flat target material (3) and the backing plate (2) are joined, they are joined while correcting warpage, or a large joining layer ( For example, it is necessary to take measures such as absorbing warping by forming 4).
- the outer diameter of the backing tube (12) is preferably set in consideration of the linear expansion coefficient of the cylindrical target material (13).
- ITO having a linear expansion coefficient of 7.2 ⁇ 10 ⁇ 6 / ° C. at 20 ° C. is used as the cylindrical target material (13), and the linear expansion coefficient at 20 ° C. of 17.3 is used as the backing tube (12).
- the distance between the inner peripheral surface of the cylindrical target material (13) and the outer peripheral surface of the backing tube (12) is preferably 0.3 mm to 2.0 mm, more preferably The outer diameter of the backing tube (12) is set so as to be 0.5 mm to 1.0 mm. If the gap is less than 0.3 mm, the cylindrical target material (13) is cracked by the thermal expansion of the backing tube (12) when the bonding material for forming the molten bonding layer (14) is injected. There is a risk that. On the other hand, if this gap exceeds 2.0 mm, it becomes difficult to place the backing tube (12) coaxially in the hollow portion of the cylindrical target material (13) and to join them in a state in which their central axes coincide. .
- the total length of the backing tube (12) needs to be appropriately selected according to the total length of the cylindrical target material (13) to be joined thereto.
- the total length of the backing tube (12) is preferably 0 mm to 500 mm, more preferably about 10 mm to 200 mm longer than the total length of the cylindrical target material (13) joined thereto. If the overall length of the backing tube (12) is within such a range, handling during sputtering becomes easy.
- Bonding layer The bonding layers (4, 14) are bonded between the bonding material applied to the surface of the backing plate (2) or the combination of the backing tube (12) and the cylindrical target material (13). The bonding material injected into the gap is formed by solidifying.
- the bonding material only needs to have a melting point lower than that of the backing body (2, 12) or the target material (3, 13) and can provide sufficient bonding strength.
- a low melting point solder using indium, tin, zinc or the like as a main component can be preferably used.
- a low melting point solder containing indium as a main component and containing tin, antimony, or the like, or a low melting point solder containing tin as a main component and containing indium, antimony, zinc, or the like can be used.
- These low melting point solders not only have the hardness after cooling and solidification in an appropriate range, but also have high fluidity when melted, so that a uniform joining layer (4, 14) with very few nests and sink marks should be formed. Can do.
- a low melting point solder containing indium as a main component preferably a low melting point solder containing 80% by mass or more of indium, more preferably 90% by mass or more of indium, has a hardness after cooling and solidification of tin or zinc as a main component. Therefore, it is possible to effectively prevent the split target material from cracking during the cooling process. Moreover, since the effect which absorbs the impact at the time of sputtering is also high, it can be used suitably especially as a joining material of a cylindrical sputtering target (11).
- the manufacturing method of a sputtering target The manufacturing method of the sputtering target of this invention is equipped with the joining process of joining the target material of this invention to a backing main body, and obtaining a sputtering target.
- the method for joining the target material and the backing body is not particularly limited, and a known method can be applied.
- connection sputtering target target which consists of a several division
- segmentation target materials is 0.1 mm or more 1 It is preferable to join the backing body so that the thickness is 0.0 mm or less.
- the arcing evaluation was performed by setting the detection time of the high-speed arc and the low-speed arc to 0, and counting the number of occurrences of arcing per 10 minutes after 1 hour had elapsed since the start of sputtering. In addition, the evaluation of arcing is carried out in three times (initial stage, mid-term period and late stage). The evaluation was evaluated as “ ⁇ ” for 50 times or more, and “X” for the occurrence of large-scale arcing that could be visually observed.
- Nodule evaluation The nodule evaluation was performed by visually observing the sputtering surface and the divided portion (side surface or end surface) after sputtering. More specifically, the nodules " ⁇ ” what did not occur at all, " ⁇ " what nodules had occurred one to five per 0.01m 2, 6 or nodules 0.01m 2 per What was generated above was evaluated as “ ⁇ ”.
- Example 1 Production of sputtering target [Processing step] A cylindrical ITO (indium oxide containing tin) sintered body having an outer diameter of 155 mm, an inner diameter of 131 mm, and an overall length (length in the axial direction) of 165 mm is used to produce the divided target materials (13a to 13f). Six were prepared, and the following processing was performed for each.
- ITO indium oxide containing tin
- these cylindrical ITO sintered bodies were set on a surface grinder, and were grinded in two times using a grindstone of a count # 120 so that the total length was 161 mm. .
- this cylindrical ITO sintered body is placed on a cylindrical grinder, and the outer diameter (sputtering surface) is set to 151 mm using a grindstone of count # 120, so that the cutting amount is ⁇ 0.1 mm / second, rough grinding with a grinding time of 18 seconds for one part was performed twice to process to 151.4 mm, and then the cutting amount was ⁇ 0.08 mm / second using a # 170 grindstone Finish grinding with a grinding time of 2.5 seconds at one location was performed twice, and zero grinding (spark out) was further performed four times by using a grindstone of count # 170.
- this cylindrical ITO sintered body was placed on an internal grinding machine, and its inner peripheral surface was ground using a # 120 grindstone so that the inner diameter was 135 mm. Finally, this cylindrical ITO sintered body was again placed on a surface grinder, and both end faces were ground 0.5 mm each so that the total length would be 160 mm using a # 120 grindstone.
- the arithmetic average roughness Ra, the maximum height Rz, and the ten-point average roughness Rz JIS of the sputtering surface (15) of the divided target materials (13a to 13f) thus obtained are measured using the surface roughness and contour shape measuring machine. Was measured by a method based on JIS B 0601 (2013). These results are shown in Table 2.
- the arithmetic average roughness Ra was 1.1 ⁇ m
- the maximum height Rz was 7.8 ⁇ m
- 10 The point average roughness Rz JIS was 7.8 ⁇ m.
- a masking tape is applied to the sputtering surface (15) and end surface (16) of the divided target materials (13a to 13f) obtained in the processing step, and then an indium-based material is used on the inner peripheral surface using an ultrasonic soldering iron. Solder was applied.
- the backing tube (12) having a total length of 1 m was erected, and the divided target material (13a) was inserted therein, and the divided target material (13a) and the backing tube (12) were heated.
- the temperature of the divided target material (13a) and the backing tube (12) exceeded 160 ° C.
- a predetermined amount of molten indium-based solder was poured into these gaps.
- this indium-type solder was the same as what was apply
- an annular Teflon sheet having a thickness of 0.5 mm, an outer diameter of 153 mm, and an inner diameter of 135 mm is inserted into the backing tube (12) and brought into close contact with the end surface (16) of the divided target material (13a).
- the split target material (13b) was inserted, and the end face (16) and the annular Teflon sheet were brought into close contact with each other.
- the split target material (13a) and the backing tube (12) were heated, and when these temperatures exceeded 160 ° C., a predetermined amount of molten indium solder was poured. After gradually cooling to room temperature in this state and confirming that the indium-based solder was solidified, the masking tape on the end face (16) was peeled off.
- Example 2 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding four times using a grindstone of count # 100, and final grinding was performed four times using a grindstone of count # 140 and zero grinding.
- the divided target materials (13a to 13f) were obtained, and the cylindrical sputtering target (11) was produced.
- the surface roughness of the sputtering surface (15) of the divided target material (13a to 13f) is measured, the divided interval is measured, and further, sputtering is performed using the cylindrical sputtering target (11).
- the divided target materials (13a to 13f) constituting the cylindrical target material (13) were evaluated.
- Example 3 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding twice using a grindstone of count # 170, and final grinding was performed once using a grindstone of count # 400, and zero grinding was performed.
- a split target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that the step was performed twice. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 4 The outer peripheral surface of a cylindrical TZO (tin oxide containing zinc oxide (ZnO)) target sintered body was subjected to rough grinding twice using a grindstone of count # 170, and a grindstone of count # 220 A split target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that the finish grinding was performed twice and the zero grinding was performed three times. For these, the same measurement and evaluation as in Example 1 were performed.
- TZO titanium oxide containing zinc oxide (ZnO)
- Example 5 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding twice using a grindstone of count # 140, final grinding was performed three times using a grindstone of count # 325, and zero grinding was performed 2 times.
- a divided target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that the application was performed. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 6 Except that the outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding four times using a # 140 grindstone and zero grinding four times, and omitting finish grinding. In the same manner as in Example 1, divided target materials (13a to 13f) and a cylindrical sputtering target (11) were obtained. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 7 a) Production of sputtering target [Processing step] In order to produce the divided target materials (3a to 3f), six plate-like ITO sintered bodies having a length of 310 mm, a width of 260 mm, and a thickness of 11 mm were prepared, and the following processing was performed for each.
- the arithmetic average roughness Ra, maximum height Rz and ten-point average roughness Rz JIS of the sputtering surface (5) of the divided target materials (3a to 3f) thus obtained were measured in the same manner as in Example 1. did. These results are shown in Table 2.
- the arithmetic average roughness Ra was 1.1 ⁇ m
- the maximum height Rz was 7.8 ⁇ m
- the point average roughness Rz JIS was 6.2 ⁇ m.
- the divided target material (3a to 3f) obtained in the processing step is bonded to the backing plate (2) using indium-based solder as a bonding material for forming the bonding layer (4) after solidification, so that the divided target material is obtained.
- a flat sputtering target (1) having a flat target material (3) composed of (3a to 3f) and having a length in the longitudinal direction of 1800 mm was obtained.
- Table 2 shows the maximum value and the minimum value of the division interval between the adjacent divided target materials (3a to 3f) of the flat target material (3).
- Example 1 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding four times using a # 80 grindstone, and four times final grinding using a count # 100 grindstone, and zero grinding A divided target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that the above process was performed four times. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 2 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding twice using a grindstone of count # 325, and final grinding was performed twice using a grindstone of count # 500, and zero grinding was performed.
- a split target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that the step was performed twice. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 3 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding twice using a # 100 grindstone, and once subjected to finish grinding using a count # 120 grindstone, and zero grinding A split target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that the step was performed once. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 4 Example, except that the outer circumferential surface of the cylindrical ITO sintered body is subjected to rough grinding once, finish grinding, and zero grinding once using a # 140 grindstone.
- divided target materials (13a to 13f) and a cylindrical sputtering target (11) were obtained. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 5 The outer peripheral surface of the cylindrical ITO sintered body was subjected to rough grinding once using a grindstone of count # 140, final grinding was performed once using a grindstone of count # 170, and zero A divided target material (13a to 13f) and a cylindrical sputtering target (11) were obtained in the same manner as in Example 1 except that grinding was omitted. For these, the same measurement and evaluation as in Example 1 were performed.
- Example 6 The top surface of the plate-like ITO sintered body was subjected to rough grinding twice using a # 80 grindstone, and finish grinding was performed five times using a count # 500 grindstone, and zero grinding was performed.
- a split target material (3a to 3f) and a flat-plate-like sputtering target (1) were obtained in the same manner as in Example 7 except that it was performed twice. For these, the same measurement and evaluation as in Example 7 were performed.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
a)材質
本発明は、酸化物焼結体からなるスパッタリング用ターゲット材(以下、「ターゲット材」という)(3、13)を対象とする。なお、酸化物焼結体からなるターゲット材は、合金を含む金属製のターゲット材との比較において、一般的に、抵抗値や透過率の経時的変化が少ない透明導電膜が得られ、かつ、成膜条件の制御が容易である一方、スパッタリング時に、ノジュールが発生しやすいという特徴がある。
本発明は、ターゲット材(3、13)の形状によって制限されることはなく、平板状ターゲット材(3)および円筒形ターゲット材(13)のいずれにも適用可能である。また、本発明は、ターゲット材(3、13)のサイズによって制限されることもなく、種々のサイズのターゲット材(3、13)に対して適用可能である。
本発明のターゲット材(3、13)においては、平板ターゲット材(3)および円筒形ターゲット材(13)のいずれの場合であっても、スパッタリング面(5、15)の表面粗さが、算術平均粗さRaで0.9μm以上、最大高さRzで10.0μm以下、かつ、十点平均粗さRzJISで7.0μm以下となっている。
本発明において、算術平均粗さRaは、0.9μm以上、好ましくは0.95μm以上に制御される。算術平均粗さRaが0.9μm未満では、スパッタリング時に飛来したスパッタ粒子が、スパッタリング面(5、15)、特に非エロージョン部に再付着し、堆積物となった場合に、この堆積物に対するアンカー効果を十分に作用させることができない。このため、堆積物の剥離がアーキングの発生原因となる。なお、算術平均粗さRaの上限は、最大高さRzおよび十点平均粗さRzJISの制御により実質的に制限されるが、1.5μm以下であることが好ましく、1.2μm以下であることがより好ましい。
本発明において、最大高さRzは、10.0μm以下、好ましくは8.0μm以下に制御される。最大高さRzが10.0μmを超えると、スパッタリング面(5、15)に比較的高い突起部が存在することとなり、スパッタリング時に、この突起部に電流が集中することによりアーキングが発生する。なお、最大高さRzの下限は、算術平均粗さRaの制御により実質的に制限されるが、5.0μm以上であることが好ましく、6.0μm以上であることがより好ましい。
本発明において、十点平均粗さRzJISは、7.0μm以下、好ましくは6.5μm以下に制御される。十点平均粗さRzJISが7.0μmを超えると、アンカー効果が過度に大きなものとなるため、スパッタリング面(5、15)に付着したスパッタ粒子が突起状に成長し、ノジュールとなりやすくなる。なお、十点平均粗さRzJISの下限も、算術平均粗さRaの制御により実質的に制限されるが、4.0μm以上であることが好ましく、4.5μm以上あることがより好ましい。
本発明では、スパッタリング面の表面粗さを適切に規制し、そのアンカー効果を利用することにより、スパッタリング面に再付着したスパッタ粒子の剥離に起因するアーキングの発生や、スパッタリング面に堆積したスパッタ粒子が突起状に成長してノジュールとなり、このノジュールに電流が集中することによるアーキングの発生を効果的に防止している。このため、平板状ターゲット材の側面や円筒形ターゲット材の端面の表面粗さのアーキングの発生に対する影響は、本来的に小さく抑制される。したがって、本発明では、これらの非スパッタリング面の表面粗さが原則として制限されることはない。ただし、スパッタリング面と同様に、その表面粗さを、算術平均粗さRaで0.9μm以上、最大高さRzで10.0μm以下、かつ、十点平均粗さRzJISで7.0μm以下に制御することは可能であり、かつ、好ましいといえる。
本発明のターゲット材の製造方法は、酸化物焼結体を、所定の形状および所定の表面粗さとなるように加工して、ターゲット材を得る加工工程を備える。なお、本発明は、平板状酸化物焼結体からなるターゲット材と、円筒形酸化物焼結体からなるターゲット材の両方に適用可能である。
平板状ターゲット材を製造する場合、はじめに、平面研削盤を用いて、平板状酸化物焼結体の各面のうち、スパッタリング面となる上面に対して研削加工を施す。この際、上面の表面粗さ、すなわち、算術平均粗さRa、最大高さRzおよび十点平均粗さRzJISが上記の所定範囲となるように、前記状面に対して、少なくとも1回以上の粗研削および1回以上のゼロ研削を施す。次に、平面研削盤、スライシングマシン、グライディングセンタ、マシニングセンタなどを用いて、平板状酸化物焼結体の側面および端面に対して研削加工を施す。これにより、平板状酸化物焼結体を所定の寸法に調整する。なお、上面と側面および端面とを加工する順番は、特に制限されることはなく、上面の表面粗さを上記の所定範囲に制御することができる限り、側面および端面に加工した後に、上面を加工してもよい。
円筒形ターゲット材を製造する場合、はじめに、円筒形酸化物焼結体の端面の研削を行い、平行度を出す。次に、円筒研削盤、内面研削盤、マシニングセンタ、グライディングセンタなどを用いて、円筒形酸化物焼結体の内周面および外周面に対して所定の寸法になるように研削加工を施す。この際、スパッタリング面となる外周面に対して、その表面粗さ、具体的には、算術平均粗さRa、最大高さRzおよび十点平均粗さRzJISが上記の所定範囲となるように、少なくとも1回以上の粗研削および1回以上のゼロ研削を施す。その後、再度、平面研削盤を用いて、円筒形ターゲット材の全長が、所定の寸法となるように端面に対して研削加工を施す。
[粗研削]
粗研削では、比較的粗い砥石を用いて研削する。具体的には、番手#100~#170の砥石を使用することが好ましく、番手#120~#170の砥石を使用することがより好ましく、番手♯120~♯140の砥石を使用することがさらに好ましい。このような比較的粒度の大きい砥石を使用することで、高い作業効率で粗研削を行うことができる。また、ゼロ研削や仕上げ研削により、容易に、所定の表面粗さを備えるスパッタリング面を形成することができる。
通常、研削加工では、粗研削の後に、仕上げ研削が被加工面に施される。しかしながら、本発明では、スパッタリング面の表面研削として、所定の番手の砥石を用いて、1回以上の粗研削および1回以上のゼロ研削を施して、スパッタリング面が上記の所定範囲となれば、仕上げ研削を施す必要はなく、仕上げ研削の工程は任意である。ただし、スパッタリング面全体にわたって適度な凹凸形状を比較的に形成する観点、および、同様に、研削後の表面状態や表面粗さを安定させたり、研削中に発生する歪や研削対象である酸化物焼結体に対する負荷を低減させたりする観点から、仕上げ研削を採用することが好ましい。
本発明のターゲット材の製造方法では、仕上げ研削後、あるいは、仕上げ研削を省略する場合には、粗研削後に、平板状酸化物焼結体の上面または円筒形酸化物焼結体の外周面に対して、ゼロ研削(スパークアウト)が施される。これによって、仕上げ研削後または粗研削後に残存する突起部を除去することができる。なお、ゼロ研削とは、加工治具を、加工面を滑らせるように移動させて、すなわち、切り込みを与えず(切り込み量は「0」)に砥石を回転させて、研削による火花や研削音がなくなるまで加工を続けて、加工面に存在する突起部を研削する加工方法をいう。
本発明のスパッタリングターゲットは、従来と同様に、バッキング本体と、バッキング本体に接合されたターゲット材と、バッキング本体とターゲット材の間の接合層とからなる。特に、本発明のスパッタリングターゲットは、ターゲット材として、上述したターゲット材を用いていることを特徴とする。
本発明のスパッタリングターゲット(1、11)では、ターゲット材として、上述したターゲット材(3、13)が用いられる。なお、ターゲット材(3、13)としては、複数の分割ターゲット材(3a~3f、13a~13f)を連結した連結ターゲット材を用いることもできる。
上述したように、ノジュールは、エロージョン部と非エロージョン部の境界およびその近傍(境界領域)で多く発生する。具体的には、平板状スパッタリングターゲット(1)ではその外周部に、円筒形スパッタリングターゲット(11)ではその両端部に、エロージョン部と非エロージョン部の境界が存在するため、ノジュールは、これらの境界およびその近傍(境界領域)で多く発生することとなる。ただし、複数の分割ターゲット材(3a~3f、13a~13f)を連結した連結ターゲット材(3、13)では、ノジュールは、上述した境界領域のみならず、分割部およびその近傍においても発生する。このため、分割数が多くなるにつれて、ノジュール発生頻度も増加することとなる。
本発明を連結ターゲット材(3、13)に適用する場合、隣り合う分割ターゲット材(3a~3f、13a~13f)の相対する側面(6)や端面(16)の間隔(以下、「分割間隔」という)は、0.1mm以上1.0mm以下とすることが好ましく、0.3mm以上0.6mm以下とすることがより好ましい。分割間隔が0.1mm未満では、成膜時の熱膨張により、隣り合う分割ターゲット材(3a~3f、13a~13f)同士が接触し、分割ターゲット材(3a~3f、13a~13f)に欠けなどが生じて、この欠けを起点として、アーキングやノジュールが発生するおそれがある。一方、分割間隔が1.0mmを超えると、隣り合う分割ターゲット材(3a~3f、13a~13f)の間に存在する不純物が、このスパッタリングターゲット(1、11)によって形成される膜中に巻き込まれてしまったり、側面(6)や端面(16)に存在する突起部に電流が集中し、アーキングやノジュールが発生しやすくなったりする。
[材質]
本発明のスパッタリングターゲット(1、11)において、バッキング本体(2、12)、すなわち、バッキングプレート(2)およびバッキングチューブ(12)の材質は、特に制限されることはなく、公知のものを使用することができる。たとえば、SUS304などの一般的なオーステナイト系ステンレス製のバッキング本体のほか、銅または銅合金製、チタンまたはチタン合金製、モリブデンまたはモリブデン合金製、アルミニウムまたはアルミニウム合金製のバッキング本体を用いることができる。ただし、これらの中には、その表面に不動態皮膜や酸化皮膜が存在し、接合材との接合性に劣ったものもある。このようなバッキング本体を使用する場合には、その表面に、銅および/またはニッケルなどの金属層を形成することが好ましい。
本発明を平板状スパッタリングターゲット(1)に適用する場合、バッキングプレート(2)の形状は、接合時に、平板状ターゲット材(3)がはみ出さない限り、特に制限されることはない。また、バッキングプレート(2)の厚さも、ハンドリング時にたわむような厚さでない限り、特に制限されることはない。
接合層(4、14)は、バッキングプレート(2)の表面に塗布した接合材、または、バッキングチューブ(12)と円筒形ターゲット材(13)を組み合わせた状態において、これらの間の間隙に注入した接合材が、固化することにより形成される。
本発明のスパッタリングターゲットの製造方法は、本発明のターゲット材をバッキング本体に接合して、スパッタリングターゲットを得る接合工程を備える。ターゲット材とバッキング本体との接合方法は、特に制限されることはなく、公知の方法を適用することができる。
アーキング評価は、高速アークおよび低速アークの検知時間を0とし、スパッタリングを開始してから1時間経過した後の、10分間当たりのアーキング発生回数をカウントすることにより行った。なお、アーキングの評価は、3回に分けて(初期、中期および後期)実施し、それぞれにおいて、アーキング発生回数が20回未満のものを「◎」、20回以上50回未満のものを「○」、50回以上のものを「△」、目視できるような規模の大きなアーキングの発生が確認されたものを「×」として評価した。
ノジュール評価は、スパッタリング後に、スパッタリング面および分割部(側面または端面)を目視で観察することにより行った。具体的には、ノジュールが全く発生していなかったものを「○」、ノジュールが0.01m2当たり1個~5個発生していたものを「△」、ノジュールが0.01m2当たり6個以上発生していたものを「×」として評価した。
a)スパッタリングターゲットの作製
[加工工程]
分割ターゲット材(13a~13f)を作製するため、外径が155mm、内径が131mm、全長(軸方向の長さ)が165mmである、円筒形ITO(スズを含有する酸化インジウム)焼結体を6本用意し、それぞれについて、以下の加工を行った。
加工工程で得られた分割ターゲット材(13a~13f)のスパッタリング面(15)および端面(16)にマスキングテープを貼りつけた後、超音波はんだごてを用いて、その内周面にインジウム系はんだを塗布した。
このようにして得られた円筒形スパッタリングターゲット(11)をマグネトロン型回転カソードスパッタリング装置に取り付け、0.7Paのアルゴン雰囲気中、パワー密度15kW/mの条件でスパッタリングを実施し、3時間放電したところでスパッタリングを中断した。このスパッタリング初期において、アーキングは発生しなかった。また、スパッタリング面(15)および端面(16)の状態を目視で観察した結果、いずれにもノジュールが発生していないことが確認された。
円筒形ITO焼結体の外周面に対して、番手#100の砥石を用いて粗研削を4回施したこと、および、番手♯140の砥石を用いて仕上げ研削を4回施し、かつゼロ研削を6回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)を得て、さらに円筒形スパッタリングターゲット(11)を作製した。実施例1と同様に、分割ターゲット材(13a~13f)のスパッタリング面(15)の表面粗さを測定し、その分割間隔を測定し、さらに、円筒形スパッタリングターゲット(11)を用いてスパッタリングを実施することにより、円筒形ターゲット材(13)を構成する分割ターゲット材(13a~13f)の評価を行った。
円筒形ITO焼結体の外周面に対して、番手#170の砥石を用いて粗研削を2回施したこと、および、番手♯400の砥石を用いて仕上げ研削を1回施し、かつゼロ研削を2回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形TZO(酸化亜鉛(ZnO)を含有する酸化錫)ターゲット焼結体の外周面に対して、番手#170の砥石を用いて粗研削を2回施したこと、および、番手♯220の砥石を用いて仕上げ研削を2回施し、かつゼロ研削を3回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形ITO焼結体の外周面に対して、番手#140の砥石を用いて粗研削を2回施したこと、番手♯325の砥石を用いて仕上げ研削を3回施し、かつゼロ研削を2回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形ITO焼結体の外周面に対して、番手#140の砥石を用いて粗研削を4回施し、かつゼロ研削を4回施したこと、および、仕上げ研削を省略したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
a)スパッタリングターゲットの作製
[加工工程]
分割ターゲット材(3a~3f)を作製するため、縦が310mm、幅が260mm、厚さが11mmの平板状ITO焼結体を6枚用意し、それぞれについて、以下の加工を行った。
加工工程で得られた分割ターゲット材(3a~3f)を、固化後に接合層(4)を形成する接合材としてインジウム系はんだを用いて、バッキングプレート(2)に接合することで、分割ターゲット材(3a~3f)により構成される平板状ターゲット材(3)を備え、長手方向の長さが1800mmである、平板状スパッタリングターゲット(1)を得た。平板状ターゲット材(3)の隣接する分割ターゲット材(3a~3f)の分割間隔の最大値および最小値を表2に示す。
このようにして得られた平板状スパッタリングターゲット(1)をマグネトロン型スパッタリング装置に取り付け、0.7Paのアルゴン雰囲気中、パワー密度3W/cm2の条件でスパッタリングを実施し、3時間放電したところでスパッタリングを中断した。このスパッタリング初期において、アーキングが発生することはなかった。また、スパッタリング面(5)および側面(6)の状態を目視で観察した結果、いずれにもノジュールが発生していないことが確認された。
円筒形ITO焼結体の外周面に対して、番手#80の砥石を用いて粗研削を4回施したこと、および、番手♯100の砥石を用いて仕上げ研削を4回施し、かつゼロ研削を4回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形ITO焼結体の外周面に対して、番手#325の砥石を用いて粗研削を2回施したこと、および、番手#500の砥石を用いて仕上げ研削を2回施し、かつゼロ研削を2回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形ITO焼結体の外周面に対して、番手#100の砥石を用いて粗研削を2回施したこと、および、番手♯120の砥石を用いて仕上げ研削を1回施し、かつゼロ研削を1回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形ITO焼結体の外周面に対して、番手#140の砥石を用いて、順次、粗研削を1回施し、仕上げ研削を施し、かつゼロ研削を1回施したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
円筒形ITO焼結体の外周面に対して、番手#140の砥石を用いて粗研削を1回施したこと、番手#170の砥石を用いて仕上げ研削を1回施したこと、および、ゼロ研削を省略したこと以外は、実施例1と同様にして、分割ターゲット材(13a~13f)および円筒形スパッタリングターゲット(11)を得た。これらに対して、実施例1と同様の測定および評価を行った。
平板状ITO焼結体の上面に対して、番手♯80の砥石を用いて粗研削を2回施したこと、および、番手#500の砥石を用いて仕上げ研削を5回施し、かつゼロ研削を2回施したこと以外は、実施例7と同様にして、分割ターゲット材(3a~3f)および平板状スパッタリングターゲット(1)を得た。これらに対して、実施例7と同様の測定および評価を行った。
2 バッキング本体(バッキングプレート)
3 平板状ターゲット材
3a~3f 分割ターゲット材
4 接合層
5 スパッタリング面
6 側面
11 円筒形スパッタリングターゲット
12 バッキング本体(バッキングチューブ)
13 円筒形ターゲット材
13a~13f 分割ターゲット材
14 接合層
15 スパッタリング面
16 端面
Claims (12)
- 酸化物焼結体からなり、スパッタリング面を有する、スパッタリング用ターゲット材であって、前記スパッタリング面が、算術平均粗さRaで0.9μm以上、最大高さRzで10.0μm以下、かつ、十点平均粗さRzJISで7.0μm以下の表面粗さを有する、スパッタリング用ターゲット材。
- 前記算術平均粗さRaが、0.9μm~1.5μmの範囲に、前記最大高さRzが、5.0μm~10.0μmの範囲に、前記十点平均粗さRzJISが、4.0μm~7.0μmの範囲にある、請求項1に記載のスパッタリング用ターゲット材。
- 酸化物焼結体からなる材料を加工して、スパッタリング用ターゲット材を得る加工工程を備え、該加工工程において、前記材料のうちの前記スパッタリング用ターゲット材においてスパッタリング面となる面に対して、所定の番手の砥石を用い、粗研削を施し、その後、ゼロ研削を施して、前記スパッタリング面の表面粗さを、算術平均粗さRaで0.9μm以上、最大高さRzで10.0μm以下、かつ、十点平均粗さRzJISで7.0μm以下とする、スパッタリング用ターゲット材の製造方法。
- 前記算術平均粗さRaが0.9μm~1.5μmの範囲に、前記最大高さRzが5.0μm~10.0μmの範囲に、前記十点平均粗さRzJISが4.0μm~7.0μmの範囲となるように、前記粗研削および前記ゼロ研削を施す、請求項3に記載のスパッタリング用ターゲット材の製造方法。
- 前記粗研削を番手#100~#170の範囲にある砥石を用いて行い、かつ、前記ゼロ研削を番手#140~#400の範囲にある砥石を用いて行う、請求項3または4に記載のスパッタリング用ターゲット材の製造方法。
- 前記粗研削を、2回~4回に分けて行う、請求項3~5のいずれかに記載のスパッタリング用ターゲット材の製造方法。
- 前記ゼロ研削を、2回~6回に分けて行う、請求項3~6のいずれかに記載のスパッタリング用ターゲット材の製造方法。
- 前記粗研削の後でかつ前記ゼロ研削の前に、番手♯140~#400の範囲にある砥石を用いた仕上げ研削を、1回~4回に分けて行う、請求項3~7のいずれかに記載のスパッタリング用ターゲット材の製造方法。
- バッキング本体と、該バッキング本体に接合層を介して接合されたスパッタリング用ターゲット材とを備えるスパッタリングターゲットであって、前記スパッタリング用ターゲット材が、請求項1または2に記載のスパッタリング用ターゲット材である、スパッタリングターゲット。
- 前記スパッタリング用ターゲット材は、複数の分割ターゲット材からなる、請求項9に記載のスパッタリングターゲット。
- 前記バッキング本体は円筒形バッキングチューブからなり、前記スパッタリング用ターゲット材は円筒形状を有する、請求項9または10に記載のスパッタリングターゲット。
- 隣接配置される複数の分割ターゲット材からなるスパッタリングターゲットの製造方法であって、前記複数の分割ターゲット材のそれぞれとして、請求項1または2に記載のスパッタリング用ターゲット材を用い、隣接する前記分割ターゲット材同士の相対する端面の間隔が、0.1mm以上1.0mm以下となるように、該複数の分割ターゲット材をバッキングチューブ本体に接合する工程を備える、スパッタリングターゲットの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580034459.6A CN106574359B (zh) | 2014-07-03 | 2015-06-25 | 溅射用靶材及其制造方法 |
EP15814242.2A EP3165632B1 (en) | 2014-07-03 | 2015-06-25 | Target material for sputtering and method for manufacturing the same |
US15/321,863 US10612127B2 (en) | 2014-07-03 | 2015-06-25 | Target material for sputtering and method for manufacturing same |
KR1020177002673A KR101920170B1 (ko) | 2014-07-03 | 2015-06-25 | 스퍼터링용 타깃재와 그 제조 방법 |
JP2016531321A JP6066018B2 (ja) | 2014-07-03 | 2015-06-25 | スパッタリング用ターゲット材とその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-137716 | 2014-07-03 | ||
JP2014137716 | 2014-07-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016002633A1 true WO2016002633A1 (ja) | 2016-01-07 |
Family
ID=55019172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/068383 WO2016002633A1 (ja) | 2014-07-03 | 2015-06-25 | スパッタリング用ターゲット材とその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10612127B2 (ja) |
EP (1) | EP3165632B1 (ja) |
JP (1) | JP6066018B2 (ja) |
KR (1) | KR101920170B1 (ja) |
CN (1) | CN106574359B (ja) |
TW (1) | TWI560298B (ja) |
WO (1) | WO2016002633A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018179553A1 (ja) * | 2017-03-31 | 2018-10-04 | 三井金属鉱業株式会社 | 分割スパッタリングターゲット |
CN115925410A (zh) * | 2023-01-31 | 2023-04-07 | 郑州大学 | 镨掺杂氧化铟锌溅射靶材及其制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109072417B (zh) * | 2017-03-31 | 2020-06-16 | Jx金属株式会社 | 溅镀靶及其制造方法 |
TWI692110B (zh) * | 2017-06-05 | 2020-04-21 | 日商凸版印刷股份有限公司 | 半導體裝置、顯示裝置、及濺鍍靶材 |
CN107299326A (zh) * | 2017-08-16 | 2017-10-27 | 信利光电股份有限公司 | 一种真空镀膜掺杂靶材及其制作方法及真空镀膜方法 |
JP6397592B1 (ja) * | 2017-10-02 | 2018-09-26 | 住友化学株式会社 | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
JP7158316B2 (ja) * | 2019-03-05 | 2022-10-21 | Jx金属株式会社 | スパッタリングターゲット及びその製造方法 |
CN111300157A (zh) * | 2019-12-05 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | 一种高硬度靶材的表面处理方法 |
CN112404461A (zh) * | 2020-10-26 | 2021-02-26 | 宁波江丰电子材料股份有限公司 | 一种钛靶材组件的车削方法 |
CN114275808A (zh) * | 2021-07-01 | 2022-04-05 | 芜湖映日科技股份有限公司 | Tft-lcd靶材用纳米级ito粉末制备工艺 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1161395A (ja) * | 1997-08-08 | 1999-03-05 | Tosoh Corp | Itoスパッタリングターゲット |
JP2001316808A (ja) * | 2000-05-09 | 2001-11-16 | Toshiba Corp | スパッタリングターゲット |
JP2005036268A (ja) * | 2003-07-18 | 2005-02-10 | Sumitomo Bakelite Co Ltd | スパッタリングターゲット |
JP2011179056A (ja) * | 2010-02-26 | 2011-09-15 | Taiheiyo Cement Corp | スパッタリングターゲット |
JP2013095965A (ja) * | 2011-11-01 | 2013-05-20 | Mitsubishi Materials Corp | スパッタリングターゲット及びその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3152108B2 (ja) | 1994-06-13 | 2001-04-03 | 東ソー株式会社 | Itoスパッタリングターゲット |
US5630918A (en) * | 1994-06-13 | 1997-05-20 | Tosoh Corporation | ITO sputtering target |
JP3755559B2 (ja) * | 1997-04-15 | 2006-03-15 | 株式会社日鉱マテリアルズ | スパッタリングターゲット |
JP4470029B2 (ja) * | 1999-06-01 | 2010-06-02 | 東ソー株式会社 | 分割itoスパッタリングターゲット |
JP2001099789A (ja) * | 1999-10-04 | 2001-04-13 | Tosoh Corp | 焼結体の観察法、ito焼結体、itoスパッタリングターゲット及びito焼結体の製造法 |
US6524730B1 (en) * | 1999-11-19 | 2003-02-25 | Seagate Technology, Llc | NiFe-containing soft magnetic layer design for multilayer media |
WO2001073154A1 (fr) * | 2000-03-28 | 2001-10-04 | Nikko Materials Company, Limited | Cible de pulverisation cathodique pour formation d'un film ito |
JP2002302762A (ja) * | 2001-04-04 | 2002-10-18 | Tosoh Corp | Itoスパッタリングターゲット |
WO2004005574A2 (en) * | 2002-07-02 | 2004-01-15 | Academy Precision Materials A Division Of Academy Corporation | Rotary target and method for onsite mechanical assembly of rotary target |
JP4694104B2 (ja) * | 2003-04-18 | 2011-06-08 | 大日本印刷株式会社 | スパッタリングターゲット |
JP4735309B2 (ja) * | 2006-02-10 | 2011-07-27 | トヨタ自動車株式会社 | 耐キャビテーションエロージョン用部材及びその製造方法 |
JP5158355B2 (ja) | 2008-03-19 | 2013-03-06 | 東ソー株式会社 | 酸化物焼結体からなるスパッタリングターゲット |
JP5301531B2 (ja) | 2008-04-03 | 2013-09-25 | Jx日鉱日石金属株式会社 | パーティクルの発生の少ないスパッタリングターゲット |
JP4948633B2 (ja) * | 2010-08-31 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
-
2015
- 2015-06-25 WO PCT/JP2015/068383 patent/WO2016002633A1/ja active Application Filing
- 2015-06-25 US US15/321,863 patent/US10612127B2/en active Active
- 2015-06-25 JP JP2016531321A patent/JP6066018B2/ja active Active
- 2015-06-25 EP EP15814242.2A patent/EP3165632B1/en active Active
- 2015-06-25 CN CN201580034459.6A patent/CN106574359B/zh active Active
- 2015-06-25 KR KR1020177002673A patent/KR101920170B1/ko active IP Right Grant
- 2015-07-02 TW TW104121456A patent/TWI560298B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1161395A (ja) * | 1997-08-08 | 1999-03-05 | Tosoh Corp | Itoスパッタリングターゲット |
JP2001316808A (ja) * | 2000-05-09 | 2001-11-16 | Toshiba Corp | スパッタリングターゲット |
JP2005036268A (ja) * | 2003-07-18 | 2005-02-10 | Sumitomo Bakelite Co Ltd | スパッタリングターゲット |
JP2011179056A (ja) * | 2010-02-26 | 2011-09-15 | Taiheiyo Cement Corp | スパッタリングターゲット |
JP2013095965A (ja) * | 2011-11-01 | 2013-05-20 | Mitsubishi Materials Corp | スパッタリングターゲット及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3165632A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018179553A1 (ja) * | 2017-03-31 | 2018-10-04 | 三井金属鉱業株式会社 | 分割スパッタリングターゲット |
CN110431252A (zh) * | 2017-03-31 | 2019-11-08 | 三井金属矿业株式会社 | 分割溅射靶 |
JPWO2018179553A1 (ja) * | 2017-03-31 | 2020-02-13 | 三井金属鉱業株式会社 | 分割スパッタリングターゲット |
CN115925410A (zh) * | 2023-01-31 | 2023-04-07 | 郑州大学 | 镨掺杂氧化铟锌溅射靶材及其制备方法 |
CN115925410B (zh) * | 2023-01-31 | 2023-07-18 | 郑州大学 | 镨掺杂氧化铟锌溅射靶材及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106574359B (zh) | 2018-11-09 |
TWI560298B (en) | 2016-12-01 |
KR101920170B1 (ko) | 2018-11-19 |
JPWO2016002633A1 (ja) | 2017-04-27 |
JP6066018B2 (ja) | 2017-01-25 |
US10612127B2 (en) | 2020-04-07 |
CN106574359A (zh) | 2017-04-19 |
EP3165632A1 (en) | 2017-05-10 |
TW201606109A (zh) | 2016-02-16 |
EP3165632B1 (en) | 2018-10-03 |
US20170130328A1 (en) | 2017-05-11 |
EP3165632A4 (en) | 2018-03-07 |
KR20170024078A (ko) | 2017-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6066018B2 (ja) | スパッタリング用ターゲット材とその製造方法 | |
TWI447248B (zh) | Reduced particle sputtering targets | |
JP5744958B2 (ja) | イッテルビウムスパッタリングターゲット | |
JP2015183284A (ja) | 円筒形スパッタリングターゲットおよびその製造方法 | |
US20150357169A1 (en) | Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same | |
TWI473898B (zh) | 太陽電池用濺鍍靶 | |
JP6273735B2 (ja) | 円筒形スパッタリングターゲットとその製造方法 | |
JP4470029B2 (ja) | 分割itoスパッタリングターゲット | |
JP4081840B2 (ja) | スパッタリングターゲットの製造方法 | |
JP6376101B2 (ja) | 円筒形スパッタリングターゲットおよびその製造方法 | |
CN111663107B (zh) | 溅射靶及其制造方法 | |
JP6755378B1 (ja) | ターゲット材の研磨方法、ターゲット材の製造方法及びリサイクル鋳塊の製造方法 | |
JP2003183820A (ja) | スパッタリングターゲット | |
JP2007126736A (ja) | スパッタリングターゲットおよびその製造方法 | |
TWI553140B (zh) | Sputtering target - backplane assembly | |
JP2005002364A (ja) | スパッタリングターゲット及びその製造方法 | |
JPH1161395A (ja) | Itoスパッタリングターゲット | |
TW201417958A (zh) | 玻璃基板之製造方法及玻璃基板研磨用磁性流動體 | |
TW201125994A (en) | Method for producing sputtering target comprising Cu-Ga alloy | |
JP5540948B2 (ja) | スパッタリングターゲット | |
JP6273734B2 (ja) | 平板形スパッタリングターゲットとその製造方法 | |
TWI512127B (zh) | 濺鍍靶及其製造方法 | |
TW201323644A (zh) | 濺鍍靶之製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15814242 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016531321 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15321863 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20177002673 Country of ref document: KR Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2015814242 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015814242 Country of ref document: EP |