WO2015166596A1 - Array light source and illumination optical system using array light source - Google Patents

Array light source and illumination optical system using array light source Download PDF

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Publication number
WO2015166596A1
WO2015166596A1 PCT/JP2014/073204 JP2014073204W WO2015166596A1 WO 2015166596 A1 WO2015166596 A1 WO 2015166596A1 JP 2014073204 W JP2014073204 W JP 2014073204W WO 2015166596 A1 WO2015166596 A1 WO 2015166596A1
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light source
array
array light
direction
semiconductor laser
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PCT/JP2014/073204
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French (fr)
Japanese (ja)
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古賀 律生
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Zero Lab株式会社
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Priority to JP2014-095265 priority
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Publication of WO2015166596A1 publication Critical patent/WO2015166596A1/en

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings

Abstract

[Problem] to provide an array light source capable of being more compact and of conserving space. [Solution] An array light source having: a first array light source (30) including a plurality of semiconductor laser elements arranged in row and column directions and outputting light from each semiconductor laser element; a second array light source (40) arranged facing the first array light source (30), including a plurality of semiconductor laser elements arranged in the row and column directions, and outputting light from each semiconductor laser element; and an array mirror (100) arranged between the first and second array light sources and reflecting laser light from the first and second array light sources, in the X direction. The array mirror (100) has a plurality of slanted surfaces (120) on one side surface (112) and a plurality of array mirrors (100) are laminated such that the one side surfaces (112) thereof are alternately inverted.

Description

Array light source and illumination optical system using array light source

The present invention relates to an array light source using a semiconductor laser element, and more particularly to an array light source including a semiconductor laser element that emits laser light in a blue band.

In recent years, semiconductor lasers that emit laser light in the red band, green band, and blue band have been developed and put to practical use. If a semiconductor laser can be used as a light source, a reduction in power consumption, a longer life, and a reduction in size can be expected as compared with a conventional lamp light source such as halogen.

Patent Document 1 discloses a light source device that includes a reflection unit that reflects light from first and second solid-state light source units that are arranged to face each other, and a fluorescent light-emitting plate that is excited by the light of the reflection unit. Patent Document 2 discloses a lighting device in which light emitting element units each having a laser diode arranged in an array are arranged to face each other, and light from each light emitting element unit is reflected by a reflection mirror.

JP 2012-133337 A JP 2012-118129 A

In the light source device or the illumination device disclosed in Patent Documents 1 and 2, a reflection mirror that reflects light from the array light source is arranged between two array light sources arranged opposite to each other, and a plurality of laser beam bundles are arranged. The structure which takes out is disclosed.

However, the conventional light source device or lighting device has the following problems. Since laser light is very coherent, its optical axis must be adjusted more accurately. When a plurality of semiconductor laser elements are arrayed, the optical axis must be adjusted so that the optical axes between the semiconductor laser elements are aligned. Such adjustments are usually performed by skilled personnel, but are very cumbersome and require a lot of time. In particular, after the semiconductor laser element is mounted on the array light source, since the semiconductor laser element is fixed, it is practically difficult to adjust the position of the semiconductor laser element.

Further, when the reflection mirror having the configuration as in Patent Document 2 is used, the pitch in the row direction of the laser diodes of the light emitting element unit becomes large, and such a configuration necessarily increases the density and size of the lighting device. Not suitable for.

An object of the present invention is to solve such a conventional problem, and to provide an array light source and an illumination optical system using the same that can be miniaturized and space-saving and can be easily aligned at the time of assembly. To do.

An array light source according to the present invention includes a plurality of semiconductor laser elements arranged in a matrix direction, a first array light source unit that outputs light from each semiconductor laser element in a first direction, and a matrix direction A second array light source unit including a plurality of semiconductor laser elements arranged and outputting light from each semiconductor laser element in a second direction opposite to the first direction; and the first array light source unit And an array mirror section that is disposed between the first array light source section and the second array light source section and reflects the laser light output from the first and second array light source sections in a third direction, and the array mirror The unit includes one side surface in which a plurality of reflection regions are formed in a stepped shape, and a plurality of array mirror units are stacked so that the positions of the one side surface are alternately reversed, and a plurality of reflection regions on at least one side surface Are each of the first array light source section The light from the conductor laser element is reflected in the third direction, a plurality of reflective regions of the at least one side to reflect light from the semiconductor laser element of the second array light source unit in the third direction.

Preferably, the plurality of array mirror units are stacked such that at least one side surface faces the first array light source unit and at least one side surface faces the second array light source unit. Preferably, each of the plurality of array mirror portions has the same shape. Preferably, the first array light source includes a first housing member having a first length and a first width, and the second array light source is a second having a second length and a second width. And the first length and the second length are equal, and the first width and the second width are equal. Preferably, the array mirror portion has a top surface, a bottom surface, a plurality of side surfaces connecting the top surface and the bottom surface, and the plurality of reflective regions are formed on one of the plurality of side surfaces. Preferably, the plurality of side surfaces include a side surface having a first length and a side surface having a first width. Preferably, the array mirror part is made of a glass material, and the reflection region is an inclined surface formed in the glass material. Preferably, the plurality of reflection regions are formed corresponding to the pitch in the row direction of the semiconductor laser element. Preferably, light emitted from the semiconductor laser elements in the first row of the first array light source is reflected in the third direction by the plurality of reflection regions of the first array mirror unit, and the second array light source The light emitted from the semiconductor laser elements in one row is reflected in the third direction by the plurality of reflection regions of the second array mirror unit, and the first row and the second array light source of the first array light source The position of the first row is different. Preferably, light emitted from the semiconductor laser elements in the first row of the first array light source is reflected in the third direction by the plurality of reflection regions of the first array mirror unit, and the second array light source The light emitted from the semiconductor laser elements in one row is reflected in the direction opposite to the third direction by the plurality of reflection regions of the first array mirror unit, and the first row and the first row of the first array light source are reflected. The positions of the two array light sources in the first row are the same. Preferably, the first array light source and the second array light source are the same array light source. Preferably, the semiconductor laser element emits blue band laser light. Preferably, the array light source further includes a prism that reflects the light reflected in the third direction in a direction opposite to the third direction.

According to the present invention, since the light from the first and second array light sources is reflected in the third direction by the stacked array mirror section, the array light source can be reduced in size and space. Can do. Further, since the array mirror portion to be stacked is positioned with respect to the first and second array light sources, alignment such as optical axis adjustment of each semiconductor laser element is not necessary, and the manufacture of the array light source or Easy to assemble.

It is a block diagram which shows the structure of the light source device which concerns on the 1st Example of this invention. It is a figure which shows the structure of the 1st array light source of a present Example. It is a figure which shows the structure of the 2nd array light source of a present Example. It is a perspective view of the array mirror of a present Example. 5A is a top view of the array mirror, FIG. 5B is a side view thereof, and FIG. 5C is a front view thereof. FIG. 6A is a side view of the light source device according to the first aspect, and FIG. 6B is a side view of the light source device according to the second aspect. It is the perspective view and top view of the laminated | stacked array mirror. FIG. 7A is a diagram for explaining a state in which the first row laser light of the first array light source is reflected, and FIG. 7B is a diagram in which the first row laser light of the second array light source is reflected. It is a figure explaining a mode that it is performed. FIG. 8A shows an array light source according to a second embodiment of the present invention. FIG. 8A is a diagram for explaining how the first row of laser light from the first array light source is reflected, and FIG. FIG. 10 is a diagram for explaining a state in which laser light in the first row of the second array light source is reflected. It is a figure which shows the structure of the array light source which concerns on the 3rd Example of this invention. In the third embodiment of the present invention, FIG. 10 (A) is a diagram for explaining how the first-row laser light of the first array light source is reflected, and FIG. 10 (B) is the second array. It is a figure explaining a mode that the laser beam of the 1st line of a light source is reflected. FIG. 11A is a plan view of a plurality of sets of array light sources according to the fourth embodiment of the present invention, and FIG. 11B is a front view of another plurality of sets of array light sources according to the fourth embodiment. is there FIG. 12 is a diagram for explaining the configuration of an array light source according to the fifth embodiment of the present invention. FIG. 13 is a diagram showing a modification of the configuration of the array light source according to the fifth embodiment of the present invention.

Next, embodiments of the present invention will be described in detail with reference to the drawings. In a preferred aspect of the present invention, the array light source is configured using a plurality of semiconductor laser elements that emit light in the blue band. However, the array light source may be configured using light in other wavelength bands, for example, semiconductor laser elements in the red band and the green band. The semiconductor laser element may be any type of a surface emitting semiconductor laser element and an edge emitting laser element. In a further preferred embodiment, an illumination optical system using a laser beam bundle from an array light source is configured. In an embodiment, the illumination optical system is configured using a space above the array light source, and the illumination optical system including the array light source can be reduced in size and space. Such an illumination optical system is used for a liquid crystal, a light source of a DLP type projector, a light source of an endoscope, a light source of an illumination device, and the like. It should be noted that the scale of the drawings is emphasized for easy understanding of the features of the invention and is not necessarily the same as the scale of an actual device. In the following description, the light in the red band, the light in the green band, and the light in the blue band may be abbreviated as R, G, and B for convenience.

FIG. 1 is a block diagram showing a configuration of a light source device according to a first embodiment of the present invention. The light source device 10 according to this embodiment includes an array light source 20 including first and second array light sources 30 and 40, a drive circuit 50 that drives the first and second array light sources 30 and 40, and a drive circuit 50. And a control unit 60 for controlling the operation. The control unit 60 can include, for example, a processing device such as a microcontroller and a microprocessor, and a memory that stores a program for controlling the processing device. The control unit 60 controls the driving of the first and second array light sources 30 and 40 via the drive circuit 50, and can turn on the semiconductor laser elements all at once or at different timings. is there. Furthermore, the control unit 60 can also control the drive circuit 50 based on a signal from the temperature sensor.

The array light source 20 of the present embodiment includes first and second array light sources 30 and 40 divided into two. As will be described later, the first and second array light sources 30 and 40 are arranged to face each other so that laser light is emitted from one array light source toward the other array light source. An array mirror is disposed between the first array light source 30 and the second array light source 40, and the array mirror preliminarily determines the laser light emitted from the first and second array light sources 30, 40. The reflected light is reflected in a given direction, for example, a direction orthogonal to the optical axis.

FIG. 2 shows a schematic side view, a front view, and a top view of the first array light source 30. The first array light source 30 includes a housing 32 preferably made of a material having high thermal conductivity, for example, a metal material such as aluminum, copper, or brass. Preferably, the housing 32 has a substantially rectangular parallelepiped shape having a length La and a width Wa. The height is a size according to the arrangement of the semiconductor laser elements to be mounted. Inside the housing 32, a plurality of semiconductor laser elements or a substrate on which a plurality of semiconductor laser elements are mounted is fixed. The plurality of semiconductor laser elements are arranged in a two-dimensional array of m rows × n columns, but in the example of FIG. 2, an example in which the semiconductor laser elements are arranged in 2 rows × n columns for ease of explanation. Is shown. In a preferred embodiment, a condensing lens 34 is attached at a position corresponding to the light exit port of the semiconductor laser element, and the condensing lens 34 condenses or collimates the laser light emitted from the semiconductor laser element. Although the condensing lens 34 is emphasized and shown so as to protrude from one surface of the housing, the condensing lens 34 can be attached so as not to protrude from one surface of the housing.

The semiconductor laser elements in the first row are arranged in the lowermost part 32A of the housing 32, and the semiconductor laser elements in the second row are arranged separated by a pitch Py in the column direction. The semiconductor laser elements in each row are spaced apart with a pitch Px in the row direction, and the positions in the column direction of the semiconductor laser elements in each row are the same. The height of one row in which the semiconductor laser elements are arranged is approximately T.

In the first preferred embodiment, the second array light source 40 is configured using the same one as the first array light source 30.

In the second preferred embodiment, the second array light source 40 is configured as shown in FIG. The second array light source 40 includes a plurality of semiconductor laser elements arranged in a two-dimensional array of m rows × n columns, but FIG. An example of arrangement in 2 rows × n columns is shown. The arrangement of the semiconductor laser elements of the second array light source 40 is preferably equal to the arrangement of the semiconductor laser elements of the first array light source 30, but is not limited thereto and may be different. Further, the number of semiconductor laser elements included in the second array light source 40 is preferably equal to the number of semiconductor laser elements included in the first array light source 30, but is not limited thereto and may be different.

The second array light source 40 includes a housing 42 made of a metal material having high thermal conductivity, such as aluminum, copper, or brass. In a preferred embodiment, the housing 42 has a substantially rectangular parallelepiped shape having a length Lb and a width Wb. More preferably, the housing 42 has the same size as the housing 32 of the first array light source 30. A plurality of semiconductor laser elements or a substrate on which a plurality of semiconductor laser elements are mounted is fixed inside the housing 42. In a preferred embodiment, a condensing lens 44 that collects light emitted from the semiconductor laser element is attached to one side of the housing 42.

Unlike the first array light source 30, the second array light source 40 does not have the first row of semiconductor laser elements arranged in the lowermost part 42 </ b> A of the housing 42, and is shifted by a half pitch Py / 2 in the column direction. The semiconductor laser elements in the first row are arranged at the positions. The semiconductor laser elements in the second row are arranged at positions separated from the semiconductor laser elements in the first row by a pitch Py in the column direction. The pitch in the row direction of the semiconductor laser elements in the first and second rows is Px, and the position in the column direction of the semiconductor laser elements in each row is the position in the column direction of the semiconductor laser elements in the first array light source. Almost equal. The height of one row in which the semiconductor laser elements are arranged is approximately T.

When the first and second array light sources 30, 40 are arranged on the same plane, that is, when the housings 32, 42 are placed on the same plane, the first array light source 30 in the column direction of each row. The positions are in a nested relationship (alternate relationship) shifted by Py / 2 with respect to the position in the column direction of each row of the second array light source 40.

Next, the array mirror disposed between the first and second array light sources 30 and 40 will be described. FIG. 4 is a perspective view of the array mirror, and FIGS. 5A, 5B, and 5C are a top view, a front view, and a side view of the array mirror. The array mirror 100 is a reflecting member disposed between the first array light source 30 and the second array light source 40, and is made of a material that can transmit the wavelength of the laser light from the array light source. Made of plastic, resin or other material.

The array mirror 100 integrally includes an upper surface 102, a bottom surface 104 parallel to the upper surface 102, and side surfaces 106, 108, 110, and 112 that connect the upper surface 102 and the bottom surface 104. Preferably, the length of the side surface 106 is W2, the length of the side surface 108 is L, the length of the side surface 110 is W1, and the thickness of the top surface 102 and the bottom surface 104 is approximately T. Preferably, the length L of the side surface 108 is equal to the lengths La and Lb of the housings 32 and 42, and the thickness T of the array mirror 100 is half of the pitch Py in the column direction of the semiconductor laser elements of the array light source (Py / 2) In other words, it is equal to the thickness T in the column direction of one row of the array light source.

A plurality of stepped inclined surfaces 120 are formed on one side surface 112 from the side surface 106 toward the side surface 110. Specifically, a flat surface 122A is formed so as to be orthogonal to the side surface 106, the inclined surface 120A is connected to the flat surface 122A, the flat surface 122B is connected to the inclined surface 120A, and the flat surface 122B is inclined. Surface 120B is connected. In this way, the inclined surface and the flat surface are sequentially connected alternately, and the flat surface 122E is connected to the last inclined surface 120D via the connecting portion 124 having the length W2.

The inclined surface 120 (120A to 120D) determines the direction in which the laser light from the array light source is reflected, and is inclined 45 degrees with respect to the flat surface 122 (122A to 122D), for example. The number of inclined surfaces 120 and the positions to be formed correspond to the number and positions of the semiconductor laser elements formed in one row of the array light source, that is, the inclined surfaces 120 are arranged at intervals of the pitch Px. In the example illustrated in FIGS. 4 and 5, four inclined surfaces 120 are illustrated for convenience.

In the array light source 20 of the present embodiment, a plurality of array mirrors 100 are stacked between the first and second array light sources 30 and 40. For example, when the first array light source 30 includes two rows of semiconductor laser elements and the second array light source 40 includes two rows of semiconductor laser elements, four array mirrors 100 are stacked and arranged. At this time, the side portions of the stacked array mirrors are alternately inverted. For example, when four array mirrors 100 are stacked, the side surface 108 of the odd-numbered array mirror 100 faces the first array light source 30 and the side surface of the even-numbered array mirror 100 faces the second array light source 40. To be positioned. The laser light emitted from each row of the first and second array light sources 30 and 40 is reflected by the inclined surface 120 in a predetermined direction.

FIG. 6A shows the array light source 20 according to the first aspect of the present embodiment. The first aspect shows a configuration example when the semiconductor laser elements in each row of the second array light source 40 are in a nested relationship with the first array light source 30 as shown in FIG. In this case, the first array light source 30 and the second array light source 40 are arranged on the same plane, and the light from the first row of semiconductor laser elements of the first array light source 30 is the lowermost array mirror 100. The light from the first row semiconductor laser element of the second array light source 40 is incident on the second-layer array mirror 100, and the light from the second row semiconductor laser element of the first array light source 30 Is incident on the third-layer array mirror 100, and light from the second row semiconductor laser elements of the second array light source 40 is incident on the uppermost (fourth-layer) array mirror 100.

FIG. 6B shows an array light source according to the second aspect of the present embodiment. If semiconductor laser elements are formed in the lowermost layers of the first array light source 30 and the second array light source 40, respectively, either the first array light source 30 or the second array light source 40 is used. Are offset in the column direction by Py / 2, that is, by a thickness T for one row. Preferably, a support member 80 also serving as a heat sink is attached to a space vacated by the offset.

FIG. 6A is a perspective view of a stacked array mirror and a top view thereof. FIG. 7A is a schematic view of the array light source of FIG. 6A as viewed from above. The light emitted from the first row of semiconductor laser elements of the first array light source 30 is shown in FIG. It is a figure explaining reflection of. Here, it is assumed that the first and second array light sources 30 and 40 have four semiconductor laser elements in one row. As shown in FIG. 7A, the laser light emitted from the condenser lens 34A is incident on the side surface 108 of the lowermost array mirror 100 in FIG. 6A at a substantially right angle, and proceeds to the inclined surface 120A. . The refractive index of the array mirror 100 is selected so that the incident light has an incident angle larger than the critical angle on the inclined surface 120A. Therefore, the incident light is totally reflected by the inclined surface 120, reflected in the X direction substantially orthogonal to the optical axis, and emitted from the side surface 110. Similarly, laser beams emitted from the condenser lenses 34B, 34C, and 34D are reflected in the X direction on the inclined surfaces 120B, 120C, and 120D, respectively.

FIG. 7B is a diagram for explaining the reflection of light emitted from the semiconductor laser element in the first row of the second array light source 40. As shown in FIG. 7B, the second-layer array mirror 100 is inverted 180 degrees so that the side surface 108 faces the second array light source 40. The laser light emitted from the condensing lens 44A in the first row of the second array light source 40 enters the side surface 108 of the second-layer array mirror 100 substantially perpendicularly and is totally reflected in the X direction on the inclined surface 120A. The Similarly, the laser beams emitted from the other condenser lenses 44B, 44C, and 44D are totally reflected in the X direction on the inclined surfaces 120B, 120C, and 120D.

As described above, according to the present embodiment, the array mirror 100 having the same shape is alternately stacked between the first array light source 30 and the second array light source 40, thereby increasing the height in the X direction. An output laser beam bundle can be obtained. By aligning the width W2 of the side surfaces 110 of the stacked array mirrors 100, positioning between the array mirrors can be easily performed. Further, by aligning the length L of the side surface 108 of the array mirror 100 with the lengths La and Lb of the housings 32 and 42, positioning between the array mirror 100 and the housings 32 and 42 can be easily performed. Furthermore, by using an array mirror having the same shape, the assembly of the array light source 20 can be improved and the cost can be reduced. Furthermore, by dividing the array light source into two, the number of semiconductor laser elements that can be mounted can be increased as compared with the case of using one array light source, and the output of the array light source can be increased. Can do. Further, since the heat source is also dispersed by dividing the array light source, it is possible to reduce the size and space of the heat dissipation structure or the cooling structure attached to the array light source.

In the above embodiment, an example in which four array mirrors 100 are stacked as shown in FIG. 6A has been shown. However, the number of array mirrors to be stacked is appropriately selected according to the arrangement of semiconductor laser elements. Furthermore, in the above embodiment, the array mirrors shown in FIGS. 4 and 5 are stacked as one unit. However, the present invention is not limited to this, and an arbitrary number of array mirrors may be integrated to form one unit. For example, four stacked array mirrors as shown in FIG. 6A may be integrated into one unit. Alternatively, two stacked array mirrors may be integrated into one unit.

Next, a second embodiment of the present invention will be described. In the first embodiment, the laser light emitted from the first and second array light sources travels inside the array mirror 100, is reflected by the inclined surface 120, and is output from the side surface 110. In the second embodiment, the laser light emitted from the first and second array light sources is reflected on the inclined surface 120 without traveling through the array mirror.

FIG. 8A is a diagram illustrating reflection of light emitted from the first row of semiconductor laser elements of the first array light source 30 in the second embodiment. Unlike the first embodiment, the array mirror 100 is arranged so that the side surface 108 of the array mirror 100 faces the second array light source 40 and the side surface 112 faces the first array light source 30. The laser light from the condensing lens 34A of the first array light source 30 is reflected substantially at right angles by the inclined surface 120D. At this time, the inclined surface 120D is coated with a metal such as aluminum or silver or another reflective film so that the laser light is totally reflected by the inclined surface 120D. The other inclined surfaces 120A to 120C are similarly coated with a metal or other reflective film. Alternatively, the reflecting member may be fixed to the inclined surface with an adhesive or the like. Thus, the laser beams from the other condenser lenses 34B, 34C, and 34D are also totally reflected in the X direction by the inclined surfaces 120C, 120B, and 120A.

FIG. 8B is a diagram for explaining reflection of light emitted from the first row of semiconductor laser elements of the second array light source 40 in the second embodiment. The array mirror 100 is arranged such that the side surface 108 of the array mirror 100 faces the first array light source 30 and the side surface 112 faces the second array light source 40. The laser light from the condensing lens 44A is reflected at a substantially right angle by the inclined surface 120D. Similarly, the laser beams from the other condenser lenses 44B, 44C, and 44D are totally reflected in the X direction by the inclined surfaces 120C, 120B, and 120A.

In the second embodiment, since the laser light emitted from the semiconductor laser element does not travel inside the array mirror 100, the array mirror 100 does not need to be made of a light transmissive material. For example, the array mirror 100 may be made of a metal material such as aluminum. Furthermore, as described above, the stacked array mirrors may be integrally configured.

Next, a third embodiment of the present invention will be described. In the first and second embodiments, the laser beam extracted from the array light source is in one direction (X direction). In the third embodiment, the laser beam is emitted from two directions (+ X direction and −X direction). The present invention relates to a high-density array light source that can be taken out.

FIG. 9 is a diagram showing a configuration of an array light source according to the third embodiment. The same components as those in the first and second embodiments are denoted by the same reference numerals, and the description thereof is omitted. In the third embodiment, unlike the first and second embodiments, the first array light source 30A is mounted with semiconductor laser elements arranged in 4 rows × n columns. It should be noted that the size of the housing 32 is not changed, and the pitch of the semiconductor laser elements in the column direction is Py / 2, and in fact, twice as many semiconductor laser elements are mounted. Similarly, the semiconductor laser elements arranged in 4 rows × n columns are mounted on the second array light source 40A. Accordingly, the first and second array light sources 30A and 40A can be array light sources having the same configuration, and the semiconductors of the first and second array light sources as in the first and second embodiments. Laser elements are not nested or staggered in the column direction.

FIG. 10 is a diagram for explaining the reflection of the laser beam of the array light source according to the third embodiment. In the third embodiment, one array mirror 100 reflects light emitted from both the first array light source 30A and the second array light source 40A in different directions and is stacked on the one. The array mirror 100 reflects the light emitted from both the first array light source 30A and the second array light source 40A in different directions.

FIG. 10A shows a state in which the first row light of the first and second array light sources is reflected. The light emitted from the condenser lenses 34A, 34B, 34C, and 34D in the first row of the first array light source 30A travels inside the array mirror 100 as in the first embodiment, and is inclined. 120A, 120B, 120C, and 120D are totally reflected in the X direction. On the other hand, the light emitted from the condenser lenses 44A, 44B, 44C, 44D in the first row of the second array light source 40A does not travel through the array mirror 100 as in the second embodiment. Further, the light is reflected by the inclined surfaces 120A, 120B, 120C, and 120D substantially at right angles to the −X direction. The inclined surfaces 120A, 120B, 120C, and 120D are coated with a metal film such as aluminum or silver, or a reflective film, as in the second embodiment.

FIG. 10B shows a state in which the light in the second row of the first and second array light sources 30A and 40A is reflected. The light emitted from the condensing lenses 34A, 34B, 34C, and 34D in the first row of the first array light source 30A does not travel through the array mirror 100, but is inclined by the inclined surfaces 120A, 120B, 120C, and 120D. Reflected approximately perpendicular to the X direction. On the other hand, the light emitted from the condensing lenses 44A, 44B, 44C, 44D in the first row of the second array light source 40A travels inside the array mirror 100, and X on the inclined surfaces 120A, 120B, 120C, 120D. Totally reflected in the direction. The light in the two directions X and -X extracted from the array light source can be used independently, or may be combined and used using an optical system.

As described above, according to the third embodiment, the mounting density of the semiconductor laser elements is improved by halving the pitch in the column direction of the semiconductor laser elements as compared to the first and second embodiments. A high-density, high-power laser array can be provided.

Next, a fourth embodiment of the present invention will be described. The fourth embodiment relates to an array light source suitable for obtaining a higher-power laser beam bundle. FIG. 11A shows a schematic plan view of the array light source of the fourth embodiment. An array light source 20A according to the fourth embodiment is configured such that a plurality of array light sources 20 according to the first embodiment are arranged in series. As shown in the figure, the array light source 20A is arranged between two sets of first array light sources 30-1 and 30-2, two sets of second array light sources 40-1 and 40-2, and a gap between them. And two sets of array mirrors 100-1 and 100-2. The first array light sources 30-1 and 30-2, the second array light sources 40-1 and 40-2, and the array mirrors 100-1 and 1002 are arranged in substantially the same plane, and the first array light source The distance between 30-1 and 30-2 and the second array light sources 40-1 and 40-2 is such that the two array mirrors 100-1 and 100-2 can be arranged so as not to overlap in the X direction. Is set. As a result, the first set of array light sources 30-1, 40-1, 100-1 emits the light beam L-1 in the X direction, and the second set of array light sources 30-2, 40-2, 100. -2 emits the light beam L-2 in the X direction. When it is desired to obtain a higher output light beam, three or more sets of array light sources may be arranged in series. As described above, according to the fourth embodiment, by arranging a plurality of sets of array light sources in the series direction, it is possible to easily obtain higher-power laser light.

FIG. 11B is a modification of the fourth embodiment, and shows a front view thereof. In the example shown in FIG. 11A, an example in which a plurality of sets of array light sources are arranged on the same plane is shown, but in the example shown in FIG. 11B, a plurality of sets of array light sources are stacked. . That is, in the array light source 20B, the second set of array light sources 30-2, 40-2, and 100-2 are stacked on the first set of array light sources 30-1, 40-1, and 100-1. Thereby, the light fluxes L-1 and L-2 can be easily obtained in the X direction. Of course, an array light source in which the configuration shown in FIG. 11A and the configuration shown in FIG.

Next, a fifth embodiment of the present invention will be described. The fifth embodiment relates to an array light source that extracts light emitted from the first array light source and the second array light source in either the X direction or the −X direction. FIG. 12A is a diagram for explaining the reflection of laser light according to the fifth embodiment. The configuration of the array light source in FIG. 12A is a configuration in which a prism 200 is added to the configuration of the array light source shown in FIG. The laser light emitted from the first array light source 30A is reflected by the inclined surfaces 120A, 120B, 120C, and 120D at a substantially right angle in the −X direction. On the other hand, the light emitted from the condenser lenses 44A, 44B, 44C, and 44D of the second array light source 40A travels inside the array mirror 100 and is totally reflected in the X direction on the inclined surfaces 120A, 120B, 120C, and 120D. Is done. In the third embodiment, a mode in which the laser beam in the X direction and the laser beam in the −X direction are separately extracted is shown. However, in the fifth embodiment, the laser beam in the X direction is reflected in the −X direction, and − Combined with the laser beam in the X direction.

As shown in FIG. 12A, in the fifth embodiment, an optical system in which a triangular prism 200 is installed in the reflected light path in the X direction is formed. The reflected light in the X direction is reflected in the prism 200 and extracted as reflected light in the −X direction. FIG. 12B is a front view of the second array light source 40A, and shows how the reflected light in the X direction is converted into reflected light in the -X direction in the prism 200. FIG.

The light emitted from the condenser lenses 44A, 44B, 44C and 44D is emitted as reflected light in the X direction by the array mirror 100. The reflected light in the X direction passes through the side surface 202 of the prism 200 and is reflected at a right angle to the reflected light at the point P1. Further, the light reflected at the point P1 is further reflected at a right angle at the point P2, passes through the side surface 202 again, and is emitted as reflected light in the −X direction. In the fifth embodiment, the reflected light is converted by the prism, but a reflecting mirror or the like may be used.

In the fifth embodiment, since the laser beam can be condensed in one direction, a higher output array light source is realized. Furthermore, since light can be output from one side direction, the degree of freedom in design when incorporated as a light source is improved. Further, as shown in FIG. 12B, light in the −X direction having different heights by the distance between the points P1 and P2 can be extracted, and the staggered layout as shown in FIG. 6 is not necessary. Can do.

FIG. 13 shows a modification of the fifth embodiment, in which the individual prisms 200-1, 200-2, 200-3, 200-4 are horizontal with respect to the plane on which the array light sources 30A and 40A are arranged. Arranged in the direction. The individual prisms 200-1, 200-2, 200-3, 200-4 form an optical system that reflects the laser light from the condenser lenses 44A, 44B, 44C, 44D in the -X direction. The array mirror used in the fifth embodiment is provided with vertical surfaces 120AW, 120BW, 120CW, and 120DW that transmit the reflected light reflected in the −X direction, and the reflection reflected by the inclined surface 120A. The light passes through the vertical surface 120AW, the reflected light reflected by the inclined surface 120B passes through the vertical surface 120BW, and the reflected light reflected by the inclined surface 120C passes through the vertical surface 120CW and is reflected by the inclined surface 120D. The reflected light passes through the vertical surface 120DW and is extracted in the −X direction. The point that light can be output from one side direction is the same as that of the optical system shown in FIG. 12. However, in the optical system of FIG. Laser light can be output from one direction. Since such an optical system has a structure different from that of the optical system shown in FIG. 12, the degree of freedom in design when incorporated as a light source is improved.

The array light source 20 according to the first to fifth embodiments described above can be used for various illumination optical systems. For example, when the array light source 20 includes a blue-band semiconductor laser element, the laser beam bundle emitted from the array light source 20 is applied to the color wheel, where it is converted into R and G light. In one aspect, the color wheel includes a reflective region that reflects blue band light and a wavelength conversion region that wavelength converts blue band light into red band, green band, or yellow band light. The wavelength conversion region can be, for example, a phosphor region that is excited by light in the blue band. In another aspect, the color wheel includes a transmission region that transmits blue band light and a wavelength conversion region that wavelength-converts blue band light into red band, green band, or yellow band light. Lights such as R, G, and B output from the color wheel can be used for illumination using optical members such as an optical lens, a prism, and a light tunnel.

The preferred embodiment of the present invention has been described in detail above, but the present invention is not limited to the specific embodiment, and various modifications can be made within the scope of the present invention described in the claims. Deformation / change is possible.

10: Light source device 20: Array light source 30: First array light source 32: Support member 32A: Lowermost part 34: Condensing lens 40: Second array light source 42: Support member 42A: Lowermost part 44: Condensing lens 50: Drive circuit 60: Control unit 100: Array mirror 102: Upper surface 104: Bottom surface 106, 108, 110, 112: Side surface 120: Inclined surface 122: Flat surface 200: Prism 202: Side surface

Claims (14)

  1. A first array light source unit that includes a plurality of semiconductor laser elements arranged in a matrix direction and outputs light from each semiconductor laser element in a first direction;
    A second array light source unit including a plurality of semiconductor laser elements arranged in a matrix direction and outputting light from each semiconductor laser element in a second direction opposite to the first direction;
    An array mirror unit disposed between the first array light source unit and the second array light source unit and configured to reflect laser beams output from the first and second array light source units in a third direction; Have
    The array mirror unit includes a plurality of stacked array mirror members each having a plurality of reflective regions formed in a step shape on one side surface, and the plurality of reflective regions on the first side surface are each semiconductor laser element of the first array light source unit. Is reflected in the third direction, and a plurality of reflection regions on the second side surface adjacent to the first side surface reflect light from each semiconductor laser element of the second array light source unit in the third direction. The array light source.
  2. The array light source according to claim 1, wherein the plurality of array mirror members are stacked such that at least one side surface faces the first array light source unit and at least one side surface faces the second array light source unit. .
  3. The array light source according to claim 1, wherein each of the plurality of array mirror members has the same shape.
  4. The first array light source includes a first housing member having a first length and a first width, and the second array light source is a second housing having a second length and a second width. The array light source according to any one of claims 1 to 3, comprising a member, wherein the first length and the second length are equal, and the first width and the second width are equal.
  5. The array mirror member has a top surface, a bottom surface, a plurality of side surfaces connecting the top surface and the bottom surface, and the plurality of reflective regions are formed on one of the plurality of side surfaces. The array light source according to one.
  6. The array light source according to claim 4, wherein the plurality of side surfaces include a first length side surface and a first width side surface.
  7. The said array mirror member is comprised from the material which can permeate | transmit the wavelength of a laser beam, and the said reflection area | region is an inclined surface formed in the said material which can permeate | transmit and transmit. Array light source.
  8. The array light source according to claim 1, wherein the plurality of reflection regions are formed corresponding to a pitch in a row direction of the semiconductor laser elements.
  9. The light emitted from the semiconductor laser elements in the first row of the first array light source is reflected in the third direction by the plurality of reflection regions of the first array mirror member, and the first array light source The light emitted from the semiconductor laser elements in the row is reflected in the third direction by the plurality of reflection regions of the second array mirror member adjacent to the first array mirror member, and the first array light source 9. The array light source according to any one of claims 1 to 8, wherein the position of the row and the first row of the second array light source are different.
  10. The light emitted from the semiconductor laser elements in the first row of the first array light source is reflected in the third direction by the plurality of reflection regions of the first array mirror member, and the first array light source The light emitted from the semiconductor laser elements in the row is reflected in a direction opposite to the third direction by the plurality of reflection regions of the first array mirror member, and the first row and the second row of the first array light source are reflected. The array light source according to claim 1, wherein the position of the array light source with the first row is the same.
  11. The array light source according to any one of claims 1 to 10, wherein the first array light source and the second array light source are the same array light source.
  12. The array light source according to claim 1, wherein the semiconductor laser element emits laser light in a blue band.
  13. 13. The array light source according to claim 1, further comprising a prism that reflects light reflected in the third direction in a direction opposite to the third direction.
  14. An illumination optical system including an optical member that illuminates using light from the array light source according to claim 1.
PCT/JP2014/073204 2014-05-02 2014-09-03 Array light source and illumination optical system using array light source WO2015166596A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003516553A (en) * 1999-07-15 2003-05-13 シリコン・ライト・マシーンズ Method and apparatus for combining light output from multiple laser diode bars
JP2012525681A (en) * 2009-04-30 2012-10-22 イーストマン コダック カンパニー Beam alignment room with diffusion correction function
JP2014182358A (en) * 2013-03-21 2014-09-29 Hitachi Media Electoronics Co Ltd Light source device and image display device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6805467B2 (en) * 2002-07-18 2004-10-19 Acr Electronics, Inc. Emergency laser array signal light
JP3788622B2 (en) * 2004-10-29 2006-06-21 シャープ株式会社 Optical integrator, illumination device, and projection-type image display device
JP5895226B2 (en) * 2010-11-30 2016-03-30 パナソニックIpマネジメント株式会社 Light source device and projection display device
CN104868361B (en) * 2011-10-11 2019-07-16 深圳光峰科技股份有限公司 Light-source system and laser light source
JP6351090B2 (en) * 2013-09-13 2018-07-04 Zero Lab株式会社 Light source unit, illumination optical system using light source unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003516553A (en) * 1999-07-15 2003-05-13 シリコン・ライト・マシーンズ Method and apparatus for combining light output from multiple laser diode bars
JP2012525681A (en) * 2009-04-30 2012-10-22 イーストマン コダック カンパニー Beam alignment room with diffusion correction function
JP2014182358A (en) * 2013-03-21 2014-09-29 Hitachi Media Electoronics Co Ltd Light source device and image display device

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