WO2015128779A1

WO2015128779A1 - Heteroacenes for organic electronics

Info

Publication number: WO2015128779A1
Application number: PCT/IB2015/051226
Authority: WO
Inventors: Chongjun JIAO; Iori Doi; Thomas Weitz; Chao Wu; Wyman ZHAO; Szehui CHUA; Stefan Becker; Michael EUSTACHI
Original assignee: Basf Se; Basf (China) Company Limited
Priority date: 2014-02-25
Filing date: 2015-02-18
Publication date: 2015-09-03
Also published as: KR101892836B1; EP3110807A4; CN106232593A; US20160365519A1; TWI659958B; EP3110807A1; US9716237B2; CN106232593B; JP2017509615A; KR20160107338A; EP3110807B1; JP6452713B2; TW201542565A

Abstract

The present invention provides compounds of formula 1 wherein X¹ and X²are independently from each other O, S or Se, and an electronic device comprising the compounds as semiconducting material.

Description

Heteroacenes for Organic Electronics

Description

Organic semiconducting materials can be used in electronic devices such as organic photovol- taic devices (OPVs), organic field-effect transistors (OFETs), organic light emitting diodes (OLEDs), and organic electrochromic devices (ECDs).

For efficient and long lasting performance, it is desirable that the organic semiconducting material-based devices show high charge carrier mobility as well as high stability, in particular to- wards oxidation by air.

Furthermore, it is desirable that the organic semiconducting materials are compatible with liquid processing techniques such as spin coating as liquid processing techniques are convenient from the point of processability, and thus allow the production of low cost organic semiconduct- ing material-based electronic devices. In addition, liquid processing techniques are also compatible with plastic substrates, and thus allow the production of light weight and mechanically flexible organic semiconducting material-based electronic devices.

The organic semiconducting materials can be either p-type or n-type organic semiconducting materials. It is desirable that both types of organic semiconducting materials are available for the production of electronic devices.

The use of heteroacene compounds containing thieno units as p-type semiconducting materials in electronic devices is known in the art.

US 201 1/0220883 discloses alkylated picene as solution-based OFET with a charge carrier mobility of up to 2 cm s.

Shinamura, S.; Osaka, I.; Miyazaki, E.; Nakao, A.; Yamagishi M .; Takeya, J.; Takimiya K. J. Am. Chem. Soc. 2011 , 133, 5024-5035 describes OFETs comprising one of the following compounds as semiconductor:

wherein R is H, n-CsHi7 or phenyl. Gao, J.; Li, R.; Li, L; Meng, Q.; Jiang, H.; Li, H.; Hu, W. Adv. Mater. 2007, 19 (19), 3008 -301 1 describes OFETs comprising the following compound

as semiconductor. The OFET shows a charge carrier mobility of 0.51 cmW s and an on/off ratio of 4.5 x 10⁶. Miyata, Y.; Yoshikawa, E.; Minari, T.; Tsukagoshi, K.; Yamaguchi, S. J. Mater. Chem. 2012, 22, 7715-7717 describes OFETs comprising the following compound

as semiconductor. One of the OFETs shows a charge carrier mobility of 3.1 cmW s and an on/off ratio of 10⁵.

Xiao, K; Liu, Y.; Qi, T.; Zhang, W.; Wang, F.; Gao, J.; Qiu, W.; Ma, Y.; Cui, G.; Chen, S.; Zhan, X.; Yu, G.; Qin, J.; Hu, W.; Zhu, D. J. Am. Chem. Soc. 2005, 127, 13281 -13286 describes OFETs comprising the following compound

as semiconductor. One of the OFETs shows a charge carrier mobility of 0.045 cmW s and an on/off ratio of 10³. US 201 1/0210319 describes organic field effect transistor (OFET) containing the following π-extended S-containing heteroarene compounds

These OFETs show the following charge carrier mobilities: 1.2 (compound 167), 1 .8 (compound 250), 2.0 (compound 638), 1 .7 (compound 881 ) cmW s, and the following on-off ratios: 2 x 10⁶ (compound 167), 3 x 10⁶ (compound 250), 4 x 10⁵ (compound 638) and 3 x 10⁶ (compound 881 ).

US 2013/0245282 describes compounds of following formula

wherein X is O, S or Se, and their use in OFETs.

It was the object of the present invention to provide improved organic semiconducting materials.

This object is solved by the compounds of claim 1 , the electronic device of claim 8 und the use of claim 10. The organic semiconducting materials of the present invention are compounds of formula

wherein

X¹ and X² are independently from each other O, S or Se, and

R¹, R², R³ and R⁴ are independently from each other H, halogen, CN, NO2, Ci-30-alkyl,

C2-3o-alkenyl, C2-3o-alkynyl, C6-i₄-aryl or 5 to 14 membered heteroaryl, wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to five substituents independently selected from the group consisting of C6-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N O2; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl, C2-30- alkenyl and C2-3o-alkynyl can be replaced by O or S, and

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN

wherein

R^a and R^b are independently selected from the group consisting of H, Ci-20-alkyl,

C2-2o-alkenyl and C2-2o-alkynyl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

C6-io-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d],

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein R^c and R^d are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substit- uents selected from the group consisting of halogen, CN and NO2.

Halogen can be F, CI, Br and I. Ci-10-alkyl, Ci-20-alkyl and Ci-30-alkyl can be branched or unbranched. Examples of Ci-10-alkyl are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, ferf-butyl, n-pentyl, neopentyl, isopentyl, n-(1 -ethyl)propyl, n-hexyl, n-heptyl, n-octyl, n-(2-ethyl)hexyl, n-nonyl and n-decyl. Examples of Ci-20-alkyl are Ci-10-alkyl and n-undecyl, n-dodecyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl and n-icosyl (C20). Examples of Ci-30-alkyl are Ci-20-alkyl and n-docosyl (C22), n-tetracosyl (C24), n-hexacosyl (C26), n-octacosyl (C28) and n-triacontyl (C30).

C2-io-alkenyl, C2-2o-alkenyl and C2-3o-alkenyl can be branched or unbranched. Examples of Ci-20-alkenyl are vinyl, propenyl, c/^'s-2-butenyl, frans-2-butenyl, 3-butenyl, c/s-2-pentenyl, trans- 2-pentenyl, c/s-3-pentenyl, frans-3-pentenyl, 4-pentenyl, 2-methyl-3-butenyl, hexenyl, heptenyl, octenyl, nonenyl and docenyl. Examples of C2-2o-alkenyl are C2-io-alkenyl and linoleyl (Cis), lino- lenyl (Cis), oleyl (Cis), and arachidonyl (C20). Examples of C2-3o-alkenyl are C2-2o-alkenyl and erucyl (C22). C2-io-alkynyl, C2-2o-alkynyl and C2-3o-alkenyl can be branched or unbranched. Examples of C2-10- alkynyl are ethynyl, 2-propynyl, 2-butynyl, 3-butynyl, pentynyl, hexynyl, heptynyl, octynyl, non- ynyl and decynyl. Examples of C2-2o-alkynyl and C2-3o-alkenyl are undecynyl, dodecynyl, un- decynyl, dodecynyl, tridecynyl, tetradecynyl, pentadecynyl, hexadecynyl, heptadecynyl, octade- cynyl, nonadecynyl and icosynyl (C20).

Examples of C6-io-aryl are phenyl, naphthyl, anthracenyl and phenantrenyl.

Examples of C6-i₄-aryl are C6-io-aryl and tetracenyl and chrysenyl.

Examples of 5 to 10 membered heteroaryl are

N

wherein R¹⁰⁰ is at each occurrence Ci-6-alkyl or phenyl.

Examples of 5 to 14 membered heteroaryl are the examples given for the 5 to 10 membered heteroaryl and

wherein R¹⁰⁰ is at each occurrence Ci-6-alkyl or phenyl. Preferably, X¹ and X² are independently from each other O or S. More preferably, X¹ and X² are both S.

Preferably, R¹, R², R³ and R⁴ are independently from each other H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C6-i4-aryl or 5 to 14 membered heteroaryl,

wherein

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl,

OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, N R^aR^b, N R^a[C(0)R^b], N [C(0)R^a][C(0)R^b], halogen, CN

wherein

R^a and R^b are independently selected from the group consisting of H , Ci

C2-2o-alkenyl and C2-2o-alkynyl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, N R^cR^d, N R^c[C(0)R^d], N [C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

Ce-10-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, N R^cR^d, N R^c[C(0)R^d],

N [C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

R^c and R^d are independently selected from the group consisting of H , Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

More preferably, R¹ , R², R³ and R⁴ are independently from each other H , Ci-30-alkyl, Ce-14-aryl or 5 to 14 membered heteroaryl,

wherein Ci-3o-alkyl can be substituted with one to five substituents independently selected from the group consisting of C₆-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, N R^aR^b, N R^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl can be replaced by O or S, and

wherein

C2-2o-alkenyl and C2-2o-alkynyl,

Ce-10-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d],

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

R^c and R^d are independently selected from the group consisting of H, Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Even more preferably, R² and R³ are H, and R¹ and R⁴ are independently from each other H or Ci-3o-alkyl,

wherein

Ci-3o-alkyl can be substituted with one to five substituents independently selected from the group consisting of C₆-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, N R^aR^b, N R^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl can be replaced by O or S,

wherein

C2-2o-alkenyl and C2-2o-alkynyl, Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, N R^cR^d, N R^c[C(0)R^d], N [C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

N [C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

R^c and R^d are independently selected from the group consisting of H , Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

Most preferably, R² and R³ are H, and R¹ and R⁴ are independently from each other H or C1-30- alkyl.

Preferred are compounds of formula

1 wherein

X¹ and X² are independently from each other O or S, and

R¹, R², R³ and R⁴ are independently from each other H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C6-i4-aryl or 5 to 14 membered heteroaryl,

wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to five substituents independently selected from the group consisting of C6-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N O2; and one or more Ch -groups, but not adjacent CH2-groups, of Ci-30-alkyl, C2-30- alkenyl and C2-3o-alkynyl can be replaced by O or S, and Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN

wherein

C2-2o-alkenyl and C2-2o-alkynyl,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

More preferred are compounds of formula

1 wherein

X¹ and X² are independently from each other O or S, and

R¹, R², R³ and R⁴ are independently from each other H, Ci-30-alkyl, Ce-14-aryl or 5 to 14 membered heteroaryl,

wherein Ci-3o-alkyl can be substituted with one to five substituents independently selected from the group consisting of C₆-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂; and one or more Ch -groups, but not adjacent CH2-groups, of Ci-30-alkyl can be replaced by O or S, and

wherein

C2-2o-alkenyl and C2-2o-alkynyl,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

Even more preferred are compounds of formula

1 wherein X¹ and X² are both S, and

R² and R³ are H, and R¹ and R⁴ are independently from each other H or Ci-30-alkyl,

wherein

Ci-3o-alkyl can be substituted with one to five substituents independently selected from the group consisting of C₆-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl can be replaced by O or S,

wherein

C2-2o-alkenyl and C2-2o-alkynyl,

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

Ce-10-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-io-alkyl, C2-io-alkenyl, C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d],

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

wherein

X¹ and X² are both S, and

R² and R³ are H, and R¹ and R⁴ are independently from each other H or Ci In particular preferred are the following compounds

1 a

1e The compounds of formula 1 can be prepared by methods known in the art.

For example, the compound of formula 1 can be prepared from a compound of formula 3 as outlined below:

3 wherein

X¹ and X² are independently from each other O, S or Se, and

R¹, R², R³ and R⁴ are independently from each other H, halogen, CN , NO2, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C6-i4-aryl or 5 to 14 membered heteroaryl, wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to five substituents independently selected from the group consisting of C6-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and NO2; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl, C2-30- alkenyl and C2-3o-alkynyl can be replaced by O or S, and

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂, wherein R^a and R^b are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl,

Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d,

NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

The compound of formula 3 can be treated with (methoxymethyl)triphenylphosphonium chloride in the presence of a base such as KOtBu in order to obtain the compound of formula 2. The compound of formula 2 is usually obtained together with isomers of the compound of formula 2. The reaction is usually performed in a suitable solvent such as ether, for example tetrahydrofu- ran or diethylether. The reaction is usually performed at low temperatures, for example between -80 and -15 °C, preferably between -60 and -30 °C.

The compound of formula 2 (usually in a mixture with the isomers of the compound of formula 2) can be treated with a strong acid such as methanesulfonic acid in order to obtain the compound of formula 1 . The reaction is usually performed in an inert organic solvent such as di- chloromethane. The reaction is usually performed at temperatures between -25 and 10 °C, preferably at 0 °C.

The compound of formula 3 can be prepared from a compound of formula 8 as outlined below:

10 wherein

X¹ and X² are independently from each other O, S or Se, and

R¹, R², R³ and R⁴ are independently from each other H, halogen, CN, NO2, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C6-i4-aryl or 5 to 14 membered heteroaryl, wherein

wherein

R^a and R^b are independently selected from the group consisting of H, Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

A mixture of the compounds of formula 8 and 13 can be treated with a palladium catalyst such as Pd(PtBu3)2 in the presence of a base such as CsF in order to obtain the compound of formu- la 10. The reaction is usually performed in suitable solvent or solvent mixture such as a mixture of 1 ,4-dioxane and water. The reaction is usually performed at temperatures between 15 and 120 °C, preferably between 50 and 100 °C.

The compound of formula 10 can be treated with a suitable halogenating agent such as N- bromosuccinimide in order to obtain the compound of formula 1 1. The reaction is usually performed in suitable solvent or solvent mixture such as dichloromethane. The reaction is usually performed at temperatures between -25 and 5 °C, preferably at 0 °C.

A mixture of the compounds of formula 1 1 and 12 can be treated with a palladium catalyst such as Pd(P'Bu3)2 in the presence of a base such as CsF in order to obtain the compound of formula 3. The reaction is usually performed in suitable solvent or solvent mixture such as a mixture of 1 ,4-dioxane and water. The reaction is usually performed at temperatures between 15 and 120 °C, preferably between 50 and 100 °C. Symmetric compounds of formula 3 can be prepared as outlined below:

wherein

X¹ and X² are identical and are O, S or Se,

R¹ and R² are independently from each other H , halogen, CN , NO2, Ci-30-alkyl, C2-3o-alkenyl, C2- 3o-alkynyl, Ce-14-aryl or 5 to 14 membered heteroaryl, wherein

wherein

R^a and R^b are independently selected from the group consisting of H , Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl, Ci-2o-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and, Ce-10-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d],

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substit- uents selected from the group consisting of halogen, CN and NO2,

R⁴ = R¹, and

A mixture of compound 5 and compound 6 can be treated with a palladium catalyst, for example Pd(PP i3)4 in order to obtain a compound of formula 4. The reaction is usually performed in suitable solvent or solvent mixture such as dimethylformamide. The reaction is usually performed at temperatures between 30 and 120 °C, preferably between 70 and 110 °C. The compound 4 can be treated with dimethylformamide in the presence of POCI3 in order to obtain compound 3. The reaction is usually performed in suitable solvent or solvent mixture such as dichloromethane. The reaction is usually performed at temperatures between -25 and 60 °C.

Symmetric compounds of formula 3 can also be prepared as outlined below:

wherein

X¹ and X² are identical and are O, S or Se, R¹ and R² are independently from each other H, halogen, CN, NO2, Ci-30-alkyl, C2-3o-alkenyl, C2- 3o-alkynyl, Ce-14-aryl or 5 to 14 membered heteroaryl, wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to five substituents independently selected from the group consisting of C6-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N O2; and one or more Ch -groups, but not adjacent CH2-groups, of Ci-30-alkyl, C2-30- alkenyl and C2-3o-alkynyl can be replaced by O or S, and

wherein

C2-2o-alkenyl and C2-2o-alkynyl, Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

C6-io-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substitu- ents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl,

C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d],

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

R^c and R^d are independently selected from the group consisting of H, Ci-10-alkyl,

C2-io-alkenyl and C2-io-alkynyl,

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2,

R⁴ = R¹, and

A mixture of the compound of formula 8 and the compound of formula 9 can be treated a palladium catalyst such as Pd(PtBu3)2 in the presence of a base such as CsF in order to obtain the compound of formula 3. The reaction is usually performed in suitable solvent or solvent mixture such as a mixture of 1 ,4-dioxane and water. The reaction is usually performed at temperatures between 15 and 120 °C, preferably between 50 and 100 °C.

The starting compounds of formula 6 and 8 can be prepared as outlined below:

wherein

X¹ is O, S or Se,

wherein

R^a and R^b are independently selected from the group consisting of H , Ci-20-alkyl,

C2-2o-alkenyl and C2-2o-alkynyl,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

The compound of formula 7 can be treated with a strong base such as lithiumdiisopropylamide in order to obtain a compound of formula 6. The reaction is usually performed in suitable solvent or solvent mixture such as tetrahydrofuran. The reaction is usually performed at temperatures between -25 and 50 °C, preferably between -5 and 30 °C.

The compound of formula 6 can be treated with a formylating agent such as 1 -formyl-piperidine in the presence of a strong base such as lithium diisopropylamide in order to obtain a com- pound of formula 8. The reaction is usually performed in suitable solvent or solvent mixture such as tetrahydrofuran. The reaction is usually performed at temperatures between -25 and 50 °C, preferably between -5 and 30 °C.

Also part of the present invention is an electronic device comprising the compound of formula 1 . Preferably, the electronic device is an organic field effect transistor (OFET).

Usually, an organic field effect transistor comprises a dielectric layer, a semiconducting layer and a substrate. In addition, an organic field effect transistor usually comprises a gate electrode and source/drain electrodes.

Preferably, the semiconducting layer comprises the compound of formula 1. The semiconducting layer can have a thickness of 5 to 500 nm, preferably of 10 to 100 nm, more preferably of 20 to 50 nm.

The dielectric layer comprises a dielectric material. The dielectric material can be silicon dioxide or aluminium oxide, or, an organic polymer such as polystyrene (PS), poly(methylmethacrylate) (PMMA), poly(4-vinylphenol) (PVP), polyvinyl alcohol) (PVA), benzocyclobutene (BCB), or poly- imide (PI). The dielectric layer can have a thickness of 10 to 2000 nm, preferably of 50 to 1000 nm, more preferably of 100 to 800 nm.

The dielectric layer can in addition to the dielectric material comprise a self-assembled monolayer of organic silane derivates or organic phosphoric acid derivatives. An example of an organic silane derivative is octyltrichlorosilane. An examples of an organic phosphoric acid deriva- tive is octyldecylphosphoric acid. The self-assembled monolayer comprised in the dielectric layer is usually in contact with the semiconducting layer. The source/drain electrodes can be made from any suitable source/drain material, for example gold (Au) or tantalum (Ta). The source/drain electrodes can have a thickness of 1 to 100 nm, preferably from 20 to 70 nm. The gate electrode can be made from any suitable gate material such as highly doped silicon, aluminium (Al), tungsten (W), indium tin oxide, gold (Au) and/or tantalum (Ta). The gate electrode can have a thickness of 1 to 200 nm, preferably from 5 to 100 nm.

The substrate can be any suitable substrate such as glass, or a plastic substrate such as poly- ethersulfone, polycarbonate, polysulfone, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Depending on the design of the organic field effect transistor, the gate electrode, for example highly doped silicon can also function as substrate.

The organic field effect transistor can be prepared by methods known in the art.

For example, a bottom-gate top-contact organic field effect transistor can be prepared as follows: The dielectric material, for example AI2O3 or silicon dioxide, can be applied as a layer on a gate electrode such as highly doped silicon wafer, which also functions as substrate, by a suitable deposition method such as atom layer deposition or thermal evaporation. A self- assembled monolayer of an organic phosphoric acid derivative or an organic silane derivative can be applied to the layer of the dielectric material. For example, the organic phosphoric acid derivative or the organic silane derivative can be applied from solution using solution-deposition techniques. The semiconducting layer can be formed by either solution deposition or thermal evaporation in vacuo of a compound of formula 1 on the self-assembled monolayer of the or- ganic phosphoric acid derivative or the organic silane derivative. Source/drain electrodes can be formed by deposition of a suitable source/drain material, for example tantalum (Ta) and/or gold (Au), on the semiconducting layer through a shadow masks. The channel width (W) is typically 50 μΐτι and the channel length (L) is typically 1000 μΐτι.

Also part of the invention is the use of the compound of formula 1 as semiconducting material.

The compounds of formula 1 show high charge carrier mobility and a high stability, in particular towards oxidation, under ambient conditions. Furthermore the compounds of formula (1 ) are compatible with liquid processing techniques.

Figure 1 shows the transfer curve of the OFET of example 6 comprising compound 1 a as semiconductor measured at a drain-source voltages Vd of -5V and at temperature of 120 °C.

Figure 2 shows the transfer curve of the OFET of example 6 comprising compound 1 c as semiconductor measured at a drain-source voltages Vd of -5V and at temperature of 60 °C. Examples

Example 1

Preparation of compound 1 a

Preparation of compound 6a:

Commercially available lithium diisopropylamide (LDA) solution (2 M, 34.6 mL, 69.2 mmol) was diluted in THF (350 mL) solution at 0 °C. A solution of compound 7a (12.7 g, 46 mmol) in THF (50 mL) was added drop wise to the dilute LDA solution at 0 °C over 60 minutes using a dropping funnel. The resultant mixture was gradually warmed to room temperature and stirred overnight. The reaction mixture was quenched with water (150 mL) and extracted with Et20 (3 x 100 mL). The combined organic layers were washed with brine and concentrated to give brown oil, which was used purified by column chromatography on silica gel using 100% hexanes to give compound 6a as a yellow oil (10.6 g, 84%). ¹H NM R (400 MHz, CDCI₃) δ 6.99 (s, 1 H), 6.70 (s, 1 H), 2.77 (t, 2H, J = 7.6 Hz), 1.65 (q, 2H, J = 8 Hz), 1 .34 - 1 .28 (m, 10H), 0.89 (t, 3H, J = 6.8 Hz).

Preparation of compound 4a:

A solution of compound 5 (1.07 g, 2.61 mmol), compound 6a (2.01 g, 7.30 mmol) and Pd(PPh₃)₄ (0.30 g, 0.26 mmol) were mixed in DM F (13 mL) and stirred at 90 °C for 2 hrs. The resultant suspension was diluted with MeOH (50 mL) and the solids were isolated by vacuum filtration, and washed thoroughly with MeOH (20 mL) followed by hexanes (3 x 20 mL) to yield compound 4a as a yellow solid (0.92 g, 75%). ¹H NMR (400 MHz, CDCI₃) δ 7.13 (s, 2H), 7.05 (s, 2H), 6.98 (s, 2H), 2.80 (t, 4H, J = 7.6 Hz), 1 .69 (q, 4H, J = 7.2 Hz), 1.38-1 .28 (m, 20H), 0.88 (t, 6H, J = 7.6 Hz). Preparation of compound 3a:

A solution of compound 4a (0.92 g, 1.95 mmol) in CH2CI2 (15 mL) was added drop wise to a mixture of POCI3 and DMF in CH2CI2 over 30 minutes at 0 °C. The resultant mixture was gradually warmed to room temperature and stirred in a 40 °C hot water bath for 2 hrs. The reaction mixture was diluted with CH2CI2 and poured into ice (100 mL) and stirred. KOAc (4.2 g) was added portion wise into the cold solution and mixed thoroughly. The organic layer was separated and concentrated to give crude product. The resultant solids were collected by filtration and washed thoroughly with MeOH (3 x 20 mL) and hexanes (3 x 20 mL) to yield compound 3a as an orange solid (0.96 g, 93%). ¹H NMR (400 MHz, CDCI₃) δ 10.10 (s, 2H), 7.28 (s, 2H), 7.00 (s, 2H), 2.87 (t, 4H, J = 7.8 Hz), 1.73 (m, 4H), 1.40-1 .28 (m, 20H), 0.88 (t, 6H, J = 7.2 Hz).

Preparation of compound 2a:

A solution of compound 3a (0.96 g, 1.82 mmol) in THF (33 mL) was added drop wise to a mixture of (methoxymethyl)triphenylphosphonium chloride (3.75 g, 10.94 mmol) and KOtBu (1 .23 g, 10.94 mmol) in THF (40 mL) at - 50 °C in a dry ice-acetonitrile bath. The resultant mixture was left to stir at this temperature for 5 hours. The reaction mixture was diluted with diethyl ether (100 mL) and brine (100 mL). The organic layer was separated and the aqueous layer further extracted with CH2Cl2 (3 x 50 mL). Combined organic layers were concentrated and purified by column chromatography on silica gel using hexanes/C^C (v/v 1 :1 ) to give compound 2a along with isomers of 2a as a yellow oil (1.0 g, 94%). ¹H NMR (400 M Hz, CDCI₃) δ 7.03 (s, 2H), 6.96 (m, 1 H), 6.77 (s, 2H), 6.25 (d, 1 H, J = 1 1 .2 Hz), 6.13 (d, 1 H, J = 6.4 Hz), 5.98 (m, 1 H), 3.83 (s, 3H), 3.68 (s, 3H), 2.76 - 2.72 (m, 4H), 1.66-1 .55 (m, 4H), 1.43 - 1 .27 (m, 20H), 0.87 (t, 6H, J = 6.8 Hz).

Preparation of compound 1a:

The mixture of compound 2a and isomers of compound 2a (1.0 g, 1 .71 mmol) obtained in the previous step in CH2Cl2 (30 mL) was treated with methanesulfonic acid (0.05 mL) drop wise at 0 °C in the dark. The resultant mixture was stirred for 16 hrs at room temperature. The reaction mixture was concentrated to dryness and the resultant precipitate triturated with MeOH , then separated by filtration. The residue was washed with methanol and hexane. The crude product was recrystallized from EtOH/CHCU to give compound 1 a as a yellow solid (0.66 g, 69%). ¹H NMR (400 M Hz, 1 ,1 ,2,2-tetrachloroethane-d₂) δ 8.06 (d, 2H, J = 7.2 Hz), 7.88 (d, 2H, J = 8.8 Hz), 7.28 (s, 2H), 3.00 (t, 4H, J = 7.6 Hz), 1.82 - 1 .80 (m, 4H), 1.46-1 .30 (m, 20H), 0.90 (t, 6H, J = 6.8 Hz). Example 2

Preparation of compound 1 b

1b

Compound 1 b was prepared as white solid in analogy to compound 1 a, but starting with com- pound

7b instead of compound 7a.

¹H NMR (400 MHz, 1 ,1 ,2,2-tetrachloroethane-d₂) δ 8.05 (d, 2H , J = 8.0 Hz), 7.87 (d, 2H, , J = 8.0 Hz), 7.28 (s, 2H), 3.00 (t, 4H, J = 8.0 Hz), 1.82-1 .80 (m, 4H), 1.46-1 .27 (m, 29H), 0.88 (t, 6H, J = 6.8 Hz). Example 3

Preparation of compound 1 c

1c Compound 1 c was prepared as white solid in analogy to compound 1 a, but starting with compound

7c instead of compound 7a.

¹H NMR (400 M Hz, 1 ,1 ,2,2-tetrachloroethane-d₂) δ 8.07 (d, 2H, J = 8.0 Hz), 7.88 (d, 2H, , J = 9.2 Hz), 7.28 (s, 2H), 3.00 (t, 4H, J = 8.0 Hz), 1.82-1 .80 (m, 4H), 1.46-1 .27 (m, 36H), 0.88 (t, 6H, J = 6.8 Hz).

1d 2d

Preparation of compound 8a:

Commercially available lithium diisopropylamide (LDA) solution (2 M , 27 mL, 53.4 mmol) was diluted in THF (100 mL) solution at 0 °C. A solution of compound 6d (5.0 mL, 53.4 mmol) in THF (5 mL) was added drop wise to the dilute LDA solution at 0 °C over 60 minutes using a dropping funnel. The reaction mixture was allowed to stir at 0 °C for 30 minutes. After 30 mins, 1 -formyl- piperidine was added drop-wise to the reaction mixture. The resultant mixture was gradually warmed to room temperature and stirred at room temperature for 2 hours. The reaction mixture was quenched with N H₄CI (150 mL) and extracted with Et20 (3 x 100 mL). The combined organic layers were washed with brine and concentrated to give yellow oil, which was purified by col- umn chromatography on silica gel using DCM: hexane (v/v 1 :1 ) to yield compound 8a as a yellow oil (8.7 g, 85%). ¹H N MR (400 MHz, CDCI3) δ 9.99 (s, 1 H), 7.71 (d, 1 H, J = 5.2 Hz), 7.15 (d, 1 H , J = 5.2 Hz).

Preparation of compound 3d

A solution of compound 9 (2.3 g, 6.92 mmol), compound 8a (2.9 g, 15.23 mmol), CsF (4.2 g, 27.70 mmol) and Pd(PtBu3)2 (70.8 mg, 0.14 mmol) in anhydrous 1 ,4-dioxane (28 mL) and water (1 .1 mL) was stirred at 85 °C for 2 hours. The resultant suspension was diluted with H2O (50 mL) and the solids were isolated by vacuum filtration, and washed thoroughly with MeOH (20 mL) followed by hexanes (3 x 20 mL) to yield compound 3d as a brown solid (2.02 g, 96%). ¹H NMR (400 M Hz, 1 ,1 ,2,2-tetrachloroethane-d₂) δ 10.18 (s, 2H), 7.81 (d, 2H, 5.2 Hz), 7.35-7.33 (m, 4H). Preparation of compound 2d:

A solution of compound 3d (2.02 g, 6.64 mmol) in THF (30 mL) was added drop wise to a mixture of (methoxymethyl)triphenylphosphonium chloride (13.7 g, 39.85 mmol) and KOtBu (4.5 g, 39.85 mmol) in THF (100 mL) at -50 °C in a dry ice-acetonitrile bath. The resultant mixture was left to stir at this temperature for 5 hours. The reaction mixture was diluted with ethyl acetate (100 mL) and brine (100 mL). The organic layer was separated and the aqueous layer further extracted with ethyl acetate (3 x 50 mL). Combined organic layers were concentrated and purified by column chromatography on silica gel using hexane/ethyl acetate (v/v 19:1 ) to give compound 2d along with isomers of compound 2d as brown oil (1.8 g, 76%). ¹H NMR (400 MHz, CD2CI2) 5 7.21 (d, 1 H, J = 5.6 Hz), 7.14-7.02 (m, 5H), 6.30 - 6.25 (m, 3H), 6.03 (d, 1 H , J = 6.8 Hz), 3.85 (s, 2H), 3.71 (s, 3H).

Preparation of compound 1 d:

The mixture compound 2d and isomers of compound 2d (1 .8 g, 5.02 mmol) obtained in the pre- vious step in CH2CI2 (80 mL) was treated with methanesulfonic acid (0.05 mL) drop wise at 0 °C in the dark. The resultant mixture was stirred for 16 hours at room temperature. The reaction mixture was concentrated to dryness and the resultant precipitate triturated with MeOH , then separated by filtration. The residue was washed with methanol and hexane to yield compound 1 d as a creamy white solid (1.30 g, 87%). ¹H NM R (400 MHz, 1 ,1 ,2,2-tetrachloroethane-d₂) δ 8.18 (d, 2H , J = 8.4 Hz), 8.02 (d, 2H, J = 8.4 Hz), 7.70 (d, 2H, J = 5.2 Hz), 7.65 (d, 2H, J = 5.2 Hz).

Example 5

Preparation of compound 1 e

1e 2e ^Je

Preparation of compound 10a:

A solution of compound 13 (697 mg, 3.32 mmol), compound 8b (1 .3 g, 3.98 mmol), CsF (2.0 g, 13.27 mmol) and Pd(PtBu₃)2 (33.9 mg, 0.07 mmol) in anhydrous 1 ,4-dioxane (13 mL) and water (0.5 mL) was stirred at 85 °C for 2 hours. The resultant suspension was diluted with H2O (50 mL) and extracted with ethyl acetate (3 x 50 mL). The combined organic layers was washed with brine and concentrated to give yellow oil, which was purified by column chromatography on silica gel using dichloromethane/hexane (50/50) to yield compound 10a as yellow oil (0.90 g, 81 %). ¹H NMR (400 MHz, CD₂CI₂) δ 10.03 (s, 1 H), 7.48 (m, 1 H), 7.29 (m, 1 H), 7.16 (m, 1 H), 7.00 (s, 1 H), 2.85 (t, 2H, J = 7.2 Hz), 1.72-1 .70 (m, 3H), 1.37 - 1 .27 (m, 13H), 0.89 (m, 3H).

Preparation of compound 11a:

A solution of compound 10a (1 12 mg, 0.33 mmol) in anhydrous CH2CI2 at 0 °C was added N-bromosuccinimide (59.6 mg, 0.33 mmol) followed by acetic acid (1 mL). The resultant mixture was gradually warmed to room temperature and stirred overnight. The reaction mixture was quenched with water and extracted with CH2CI2 (50 mL x 3). The combined organic layer was washed with brine and concentrated to give orange oil, which was purified by column chromatography on silica gel using ethyl acetate/hexane (20/80) to yield compound 1 1 a as orange oil (70 mg, 51 %). ¹H N MR (400 MHz, 1 ,1 ,2,2-tetrachloroethane-d₂) δ 9.97 (s, 1 H), 7.12 (d, 1 H, J = 3.6 Hz), 7.04 (d, 1 H, J = 4.0 Hz), 6.93 (s, 1 H), 2.84 (t, 2H, J = 7.2 Hz), 1.73-1 .69 (3H, m), 1 .36 - 1.27 (m, 13H), 0.88 (t, 3H, J = 6.8 Hz). Preparation of compound 3e:

A solution of compound 12a (99.8 mg, 0.42 mmol), compound 1 1 a (173.3 mg, 0.42 mmol), CsF (254.6 mg, 1.68 mmol), Pd(PtBu3)2 (4.3 mg, 0.01 mmol) in anhydrous 1 ,4-dioxane (4 mL) and water (0.5 mL) was heated at 85 °C for 2 hours. The reaction mixture was quenched with water and extracted with CH2CI2 (50 mL x 3). The combined organic layers were washed with brine and concentrated to give an orange solid, which was purified by column chromatography on silica gel using ethyl acetate/hexane (20/80) to yield compound 3e as orange solid (0.12 g, 66%). ¹H NMR (400 MHz, 1 ,1 ,2,2-tetrachloroethane-d2) δ 10.18 (s, 1 H), 10.08 (s, 1 H), 7.80 (d, 1 H , J = 4.8 Hz), 7.34 - 7.32 (m, 3H), 7.04 (s, 1 H), 2.88 (t, 2H, J = 6.8 Hz), 1.76 - 1 .72 (m, 3H), 1.40-1.27 (m, 13H), 0.88 (t, 3H, J = 5.2 Hz).

Preparation of compound 2e:

A solution of compound 3e (0.12 g, 0.28 mmol) in THF (5 mL) was added drop wise to a mixture of (methoxymethyl)triphenylphosphonium chloride (0.57 g, 1 .67 mmol) and KOtBu (0.19 g, 1.67 mmol) in THF (6 mL) at - 50 °C in a dry ice-acetonitrile bath. The resultant mixture was left to stir at this temperature for 5 hours. The reaction mixture was diluted with ethyl acetate (20 mL) and brine (20 mL). The organic layer was separated and the aqueous layer was further extracted with ethyl acetate (3 x 50 mL). Combined organic layers were concentrated and purified by column chromatography on silica gel using hexanes/ethylacetate (90/10) to give compound 2e along with isomers of compound 2e as yellow oil.

Preparation of compound 1e:

The mixture of compound 2e and isomers of compound 2e obtained in the previous step (1 .8 g, 5.02 mmol) in CH2CI2 (80 mL) was treated with methanesulfonic acid (0.05 mL) drop wise at 0 °C in the dark. The resultant mixture was stirred for 16 hours at room temperature. The reaction mixture was concentrated to dryness and the resultant precipitate triturated with MeOH , then separated by filtration. The residue was washed with methanol and hexane to yield compound 1 e as a creamy white solid (1.30 g, 87%).

Example 6

Preparation of a field effect transistor comprising compound 1 a, 1 b, respectively, 1 c as semiconductor

Highly doped silicon wafers were coated (30 nm) with AI2O3 by atom layer deposition and were thoroughly cleaned with acetone and iso-propanol and after a short oxygen plasma treatment functionalized with an octyldecylphosphoric acid monolayer from solution. The highly doped silicon is used as a substrate and back gate electrode, the octyldecylphosphoric acid treated AI2O3 acts as the gate dielectric. Compound 1 a, 1 b, respectively, 1 c was thermally evaporated in high vacuum while the substrate was held at a defined temperature. Gold source-drain contacts were defined with a shadow mask. The channel width (W) is typically 200 μιτι and channel length (L) is 100 μιτι. Example 7

Preparation of a field effect transistor comprising compound 1 c as semiconductors

Highly doped p-type silicon (100) wafers with a 200 nm-thick thermally grown silicon dioxide (S1O2) were used as substrates. Prior to deposition of compound 1 c the Si/SiC>2 surfaces were modified through octyltrichlorosilane (OTS) treatment process. A compound 1 c layer was fabricated by solution-deposition technique (chlorobenzene, 1 mg/mL, drop casting at 70 °C). Then a 50 nm-thick Au layer for source and drain electrodes was deposited though a shadow mask to give top-contact OFET devices. The channel width (W) was 1500 μιτι and channel length (L) was 75 μιτι.

Example 8

Measurement of the transfer curves of the field effect transistors prepared in example 6 and 7 The drain current Id in relation to the gate-source voltage V_g (top transfer curve) and the drain current ld^{1 2} in relation to the gate-source voltage V_g (bottom transfer curve) of the transistors of examples 6 and 7 were measured on a Keithley 4200 SCS in air at various drain-source voltages Vd and at various temperatures. Figure 1 shows the transfer curve of the OFET of example 6 comprising compound 1 a as semiconductor measured at a drain-source voltages Vd of -5V and at temperature of 120 °C.

Figure 2 shows the transfer curve of the OFET of example 6 comprising compound 1 c as semiconductor measured at a drain-source voltages Vd of -5V and at temperature of 60 °C.

The compounds 1 a, 1 b and 1 c show typical behavior of p-type semiconducting material.

The charge-carrier mobility was extracted in the saturation regime from the slope of the square root drain current ld^{1 2} versus gate-source voltage V_g. The threshold voltage Vth was obtained using the following equation: μ = 2 Id / {(W/L)Ci (V_g-Vth)²}, wherein Ci is the capacitance of the dielectric layer.

The average values of the charge carrier mobility μ, the ION/IOFF ratio and the threshold voltage Vth for the organic field effect transistor of example 6 comprising compound 1 a, 1 b and 1 c, re- spectively, and for the organic field effect transistor of example 7 comprising compound 1 c as semiconducting material are given in table 1. Example Semiconductor V_th μ I on/I off

[cm²V-¹s-¹]

[V]

6 1a -7.6 1.1 3x 10⁷

6 1b -9 0.95 6x 10⁷

6 1c -8.9 2.2 5x 10⁷

7 1c -34 0.37 1 x 10⁶

6 1d -9.0 0.027 5x 10³

6 1e -8.6 1.4 3x 10⁷

6 1e -9.0 2.0 6x 10⁶

Table 1.

Claims

1 . Compounds of formula

1

wherein

X¹ and X² are independently from each other O, S or Se, and

R¹, R², R³ and R⁴ are independently from each other H, halogen, CN , NO2, Ci-30-alkyl,

OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN

wherein

R^a and R^b are independently selected from the group consisting of H, Ci

C2-2o-alkenyl and C2-2o-alkynyl,

wherein

2. The compounds of claim 1 , wherein X¹ and X² are independently from each other O or S.

3. The compounds of claim 1 , wherein X¹ and X² are both S.

4. The compounds of any of claims 1 to 3, wherein R¹, R², R³ and R⁴ are independently from each other H, Ci-30-alkyl, C2-3o-alkenyl, C2-3o-alkynyl, C6-i4-aryl or 5 to 14 membered heteroaryl, wherein

Ci-3o-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one to five substituents in- dependency selected from the group consisting of C6-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and NO2; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl, C2-30- alkenyl and C2-3o-alkynyl can be replaced by O or S, and Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN

wherein

C2-2o-alkenyl and C2-2o-alkynyl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d,

NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein Ci-io-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO2.

5. The compounds of any of claims 1 to 3, wherein R¹, R², R³ and R⁴ are independently from each other H, Ci-30-alkyl, Ce-14-aryl or 5 to 14 membered heteroaryl,

wherein

Ci-3o-alkyl can be substituted with one to five substituents independently selected from the group consisting of C₆-io-aryl, 5 to 10 membered heteroaryl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, N R^aR^b, N R^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂; and one or more Ch -groups, but not adjacent Ch -groups, of Ci-30-alkyl can be replaced by O or S, and

Ce-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-20-alkyl, C2-2o-alkenyl, C2-2o-alkynyl, OR^a, OC(0)-R^a, C(0)-OR^a, C(0)-R^a, NR^aR^b, NR^a[C(0)R^b], N[C(0)R^a][C(0)R^b], halogen, CN and N0₂, wherein

C2-2o-alkenyl and C2-2o-alkynyl,

Ci-20-alkyl, C2-2o-alkenyl and C2-2o-alkynyl can be substituted with one to five substituents selected from the group consisting of phenyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d], N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, and, Ce-10-aryl and 5 to 10 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of Ci-10-alkyl, C2-io-alkenyl, C₂-io-alkynyl, OR^c, OC(0)-R^c, C(0)-OR^c, C(0)-R^c, NR^cR^d, NR^c[C(0)R^d],

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

Ci-10-alkyl, C2-io-alkenyl and C2-io-alkynyl can be substituted with one to five substit- uents selected from the group consisting of halogen, CN and NO2.

6. The compounds of any of claims 1 to 3, wherein R² and R³ are H, and R¹ and R⁴ are independently from each other H or Ci-30-alkyl,

wherein

C2-2o-alkenyl and C2-2o-alkynyl,

N[C(0)R^c][C(0)R^d], halogen, CN and N0₂, wherein

wherein

7. The compounds of any of claims 1 to 3, wherein R² and R³ are H, and R¹ and R⁴ are independently from each other H or Ci-30-alkyl.

8. An electronic device comprising the compound of formula 1 according to any of claims 1 to 7.

9. The electronic device of claim 8, wherein the electronic device is an organic field effect transistor (OFET).

10. The use of the compound of formula 1 according to any of claims 1 to 7 as semiconducting material.