WO2015102318A1 - 단결정 그래핀의 제조방법 - Google Patents
단결정 그래핀의 제조방법 Download PDFInfo
- Publication number
- WO2015102318A1 WO2015102318A1 PCT/KR2014/012902 KR2014012902W WO2015102318A1 WO 2015102318 A1 WO2015102318 A1 WO 2015102318A1 KR 2014012902 W KR2014012902 W KR 2014012902W WO 2015102318 A1 WO2015102318 A1 WO 2015102318A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- graphene
- single crystal
- substrate
- polycrystalline
- catalyst
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/06—Recrystallisation under a temperature gradient
- C30B1/08—Zone recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
Definitions
- the present invention relates to a method for producing graphene, and more particularly to a method for producing single crystal graphene.
- Graphene refers to a two-dimensional thin film of a honeycomb structure composed of one or more layers of carbon atoms. When the carbon atoms are chemically bonded by sp 2 hybrid orbits, they form a two-dimensional carbon hexagonal network surface. Carbon has four outermost electrons, and when combined, four electrons hybridize to participate. Carbon bonds include sp 3 bonds and sp 2 bonds, and only sp 3 bonds are square diamond and sp 2 bonds are graphite or graphene, a layer of graphite. . For example, electrons that must exist only in orbital and p orbitals have a hybrid orbital of sp 2 and sp 3 that combines s and p orbits.
- the sp 2 hybrid orbital Since the sp 2 hybrid orbital has one electron in the orbit and two electrons in the orbit, the sp 2 hybrid orbital has a total of three electrons, wherein the energy levels of the respective electrons are the same. It is in a hybrid orbital state because it is more stable to have a hybrid orbital than to have s and p orbitals, respectively.
- the aggregate of carbon atoms having a planar structure is graphene, and the thickness of a single layer is about 0.3 nm because it is only one carbon atom in size.
- Graphene is metallic in nature, has conductivity in the layer direction, has excellent thermal conductivity, and has high mobility of charge carriers, thereby implementing a high-speed electronic device. It is known that the electron mobility of the graphene sheet has a value of about 20,000 to 50,000 cm 2 / Vs.
- the conventional silicon-based semiconductor processing technology is not easy to manufacture a semiconductor device having a high integration of less than 30 nm class. This is because the thickness of the metal atom layer such as gold or aluminum deposited on the substrate is thermodynamically unstable and the metal atoms are entangled with each other to obtain a uniform thin film. This is because they become nonuniform at nanoscale.
- graphene has the potential to overcome the integration limitations of this silicon-based semiconductor device technology.
- Graphene has a characteristic of changing the electrical resistance due to the change in charge density according to the gate voltage because the thickness of the metal is very thin, the thickness of which is not more than a few nm corresponding to the thickness of the electron shield.
- Metal transistors can be used to implement high-speed electronic devices because the mobility of charge carriers is large, and the charges of charge carriers can be changed from electrons to holes depending on the polarity of the gate voltage. It is expected to be.
- the first method is the micro cleavage method using cellophane tape. This method was developed by a team of researchers from the University of Manchester, UK, and researchers using graphene used it because of its simplicity. Using this method, the thickness of the graphite can be reduced by allowing the graphite to be continuously separated using a cellophane tape, and the thin graphite thin film thus obtained is transferred onto the substrate, or the graphite is rubbed onto the substrate as if it is drawn with chalk on the board. As a method, a thin graphite thin film is obtained. However, this method has a problem in that it depends on the quality of the adhesive tape, and it is difficult to pattern the electrode by electron beam lithography due to the large amount of useless and thick graphite particles.
- the second method is the epitaxial growth technique through pyrolysis of silicon carbide (SiC) under high vacuum.
- This epitaxial growth technique is a technique that sublimates silicon on the surface of silicon carbide at high vacuum and high temperature, such as molecular beam crystal growth system (MBE), so that carbon atoms remaining on the surface form graphene.
- MBE molecular beam crystal growth system
- this technology requires that silicon carbide itself is used as a substrate, which has a problem in that performance is not good for use as an electronic material.
- the third method is to use chemical exfoliation of graphite compounds.
- this method has not only succeeded in obtaining graphene, but only a few hundred nanometers thick graphite fragments, and may cause many defects because the chemicals inserted between the graphite layers are not completely removed. There is a problem.
- the fourth method is a chemical vapor deposition technique on a metal substrate.
- this method has a problem that it is impossible to grow the graphene aligned in one direction due to the growth characteristics while the graphene is growing.
- the biggest obstacle to the practical application of graphene electronic devices is that it is difficult to make a bandgap due to the nature of the material, and thus it is more difficult to obtain a single crystal having a large area like silicon rather than a logic circuit.
- Currently, it is known that the growth of graphene in a liquid state in which copper is almost dissolved can control the initial uniformity of the graphene film. However, even in this case, since the orientation does not match, large-scale graphene single crystal growth is impossible.
- Graphene Applications For the new generation of the electronic device industry, the creation of new ideas for the production of single crystal graphene is required.
- the present invention has been made to solve various problems including the above problems, and an object thereof is to provide a manufacturing method for growing a graphene film aligned in one direction such as a single crystal on a wafer scale insulator substrate.
- these problems are exemplary, and the scope of the present invention is not limited thereby.
- a method of manufacturing a single crystal graphene film according to an aspect of the present invention may be provided.
- the method of manufacturing a single crystal graphene film may include forming polycrystalline graphene using a hydrocarbon gas on a substrate, forming a catalyst on the polycrystalline graphene, and heat treating the polycrystalline graphene and the catalyst. Recrystallization into single crystal graphene.
- the substrate may be an insulating substrate including Al 2 O 3 , AlN, Si 3 N 4 , SrTiO 3 or BN.
- the substrate may be a composite substrate in which a transition metal including Cu, Ni, or the like is grown on the insulator in a 0.5 ⁇ m to 3 ⁇ m thin film form.
- the single crystal graphene may include single crystal graphene grown on the insulating substrate or the composite substrate.
- the substrate may be a metal substrate including W or Mo.
- the substrate may include a wafer scale substrate.
- the step of forming the polycrystalline graphene using a hydrocarbon gas on the substrate may be performed at a temperature of 600 °C to 1100 °C.
- the catalyst may include aluminum or a 3d transition metal compound.
- the step of recrystallization of the polycrystalline graphene to monocrystalline graphene by heat treatment of the polycrystalline graphene and the catalyst may be carried out at a temperature of 1400 °C to 2000 °C.
- the heat treatment includes heating the first portion of the polycrystalline graphene and the catalyst using a local heating source; And moving the local heating source to cool the first portion and simultaneously heating the second portion at a different position.
- the heat treatment may be performed by moving the local heating source in one direction from one side of the substrate to the other side.
- a manufacturing method for growing a graphene film aligned in one direction like a single crystal on an insulating substrate of a wafer scale it is possible to provide a manufacturing method for growing a graphene film aligned in one direction like a single crystal on an insulating substrate of a wafer scale.
- a graphene film aligned in one direction such as a single crystal on a wafer scale
- the scope of the present invention is not limited by these effects.
- FIG. 1 is a flowchart illustrating a method of manufacturing a single crystal graphene film according to an embodiment of the present invention.
- FIGS. 2 and 3 are cross-sectional views sequentially illustrating a method of manufacturing a single crystal graphene film according to an embodiment of the present invention.
- FIG. 4 is a flowchart illustrating a step of recrystallization in the method of manufacturing a single crystal graphene film according to an embodiment of the present invention.
- 5 and 6 are plan views illustrating sequentially recrystallization steps in the method of manufacturing a single crystal graphene film according to an embodiment of the present invention.
- FIG. 1 is a flowchart illustrating a method of manufacturing a single crystal graphene film according to an embodiment of the present invention
- Figures 2 and 3 are cross-sectional views sequentially illustrating a method of manufacturing a single crystal graphene film according to an embodiment of the present invention. .
- a method of manufacturing a single crystal graphene film according to an embodiment of the present invention includes forming a polycrystalline graphene 20 by using a hydrocarbon gas on a substrate 10 (S100). Forming the catalyst 30 on the graphene 20 (S200), and heat-treating the polycrystalline graphene 20 and the catalyst 30, thereby recrystallizing the polycrystalline graphene 20 into single crystal graphene 40 It includes the step (S300).
- the substrate 10 includes Al 2 O 3 , AlN, Si 3 N 4 , SrTiO 3, or BN. It may be made of an insulating substrate. Alternatively, the substrate 10 may include a transition metal that may include Cu, Ni, or the like on an insulator (eg, an insulating substrate including Al 2 O 3 , AlN, Si 3 N 4 , SrTiO 3, or BN). It may be a composite substrate grown in a 0.5 ⁇ m to 3 ⁇ m thin film form. In this case, the single crystal graphene 40 may include single crystal graphene grown on the insulating substrate or the composite substrate.
- the substrate 10 may be a metal substrate including W or Mo. In embodiments of the invention the substrate 10 may comprise a wafer scale substrate.
- the hydrocarbon gas may include, for example, methyl group, methane, ethane, ethylene, acetylene, propane, propylene, butane, butadiene, pentane or hexane.
- the catalyst in the step (S200) of forming the catalyst 30 on the polycrystalline graphene 20, the catalyst is a compound containing aluminum, aluminum or 3d transition It may include a metal-based compound.
- the 3d transition metal is, for example, titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) or copper (Cu) It may include.
- the compound or a 3d transition metal-containing aluminum compound is Al 4 C 3, KAl 2 ( AlSi 3) O 10 (OH) 2, Cu, Ni, Co, Mn, CaO, CrCl 2 -6H 2 O, Cr 3 It may be C 2 , CrS, CuF 2 , CuSiF 6 , CuO or CuCl.
- the present inventors deposited the aluminum, aluminum-containing compounds, or 3d transition metal-based compounds with very low coverage or using precursors containing them, such as vapor deposition (CVD) or atomic layer deposition (ALD) process.
- the catalyst 30 was implemented by adsorption with, and it was confirmed that graphene single crystals could be grown on the insulating substrate or the composite substrate by the catalyst.
- the step of recrystallizing the polycrystalline graphene 20 into a single crystal graphene 40 by heat-treating the polycrystalline graphene 20 and the catalyst 30 may be implemented at a temperature of about 1400 °C to 2000 °C.
- the heat treatment may be performed by moving a heater to raise the temperature of a portion of the sample rather than simultaneously raising the temperature of the entire sample, and scanning the region in which the temperature is raised in one direction, hereinafter, referring to the drawings.
- FIG. 4 is a flowchart illustrating a step of recrystallization in the method of manufacturing a single crystal graphene film according to an embodiment of the present invention
- Figures 5 and 6 are recrystallization in the method of manufacturing a single crystal graphene film according to an embodiment of the present invention
- These are plan views illustrating the steps of rendering.
- the heat treatment is performed by moving the local heating source 60 in one direction (for example, in one direction from left to right in FIG. 5 and FIG. 6) from one side to the other side of the substrate 10 constituting the sample 50.
- the second portion A2 may correspond to a region adjacent to the first portion A1 in the direction in which the local heating source 60 moves from the first portion A1.
- the present invention does not directly form single crystal graphene using a hydrocarbon gas, but forms a catalyst on polycrystalline graphene after growing polycrystalline graphene on a substrate using a hydrocarbon gas, and then, the polycrystalline graphene. And a multi-step method of recrystallizing the polycrystalline graphene into single crystal graphene by heat-treating the catalyst by a zone heating method.
- the heat treatment can be understood as post annealing.
- the temperature of forming the bulk graphite is about 2500K or more, which is considered a suitable temperature considering the size of the bond between the carbon atoms and carbon atoms.
- the formation temperature may be lower than the temperature of 2500K because there is more space for the carbon atoms to move than the bulk material.
- the temperature will be in the range of about 1400K to 2000K since different grains have to undergo a re-bonding process in order to align again in one direction. At this temperature, metal substrates with high melting point such as W or Mo should be used.
- a ceramic substrate eg, an insulating substrate including Al 2 O 3 , AlN, Si 3 N 4 , SrTiO 3, or BN
- a ceramic substrate capable of thin film growth at high temperature
- Can grow pins it is expected that a semiconductor device or an electronic device can be manufactured without performing a process of transferring the grown graphene to another substrate.
- the method for producing a single crystal graphene film as a method of lowering the temperature of recrystallization, it is intended to lower the reaction energy by utilizing a catalytic reaction using an organic or inorganic material.
- the inventors found that using aluminum or 3d transition metal compounds as a catalyst can lower the process temperature to 1800K or less.
- the insulating substrate or the composite is not induced by heating the entire sample, but by inducing recrystallization using a zone heating process in which the heating is performed from the edge of the substrate and the heated region is moved in one direction.
- Graphene single crystal growth was implemented on the substrate.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
Abstract
Description
Claims (11)
- 기판 상에 탄화수소 가스를 이용하여 다결정 그래핀을 형성하는 단계;상기 다결정 그래핀 상에 촉매를 형성하는 단계; 및상기 다결정 그래핀 및 상기 촉매를 열처리함으로써, 상기 다결정 그래핀을 단결정 그래핀으로 재결정화하는 단계;를 포함하는, 단결정 그래핀의 제조방법.
- 제 1 항에 있어서,상기 기판은 Al2O3, AlN, Si3N4, SrTiO3 또는 BN을 포함하여 이루어진 절연기판인, 단결정 그래핀의 제조방법.
- 제 2 항에 있어서,상기 기판은 상기 절연기판 상에 천이금속을 0.5㎛ 내지 3㎛ 박막 형태로 성장시킨 복합기판인, 단결정 그래핀의 제조방법.
- 제 2 항 또는 제 3 항에 있어서,상기 단결정 그래핀은 상기 기판 상에 성장한 단결정 그래핀을 포함하는, 단결정 그래핀의 제조방법.
- 제 1 항에 있어서,상기 기판은 W 또는 Mo을 포함하여 이루어진 금속기판인, 단결정 그래핀의 제조방법.
- 제 1 항에 있어서,상기 기판은 웨이퍼 스케일의 기판을 포함하는, 단결정 그래핀의 제조방법.
- 제 1 항에 있어서,상기 기판 상에 탄화수소 가스를 이용하여 다결정 그래핀을 형성하는 단계는 600℃ 내지 1100℃의 온도에서 수행되는, 단결정 그래핀의 제조방법.
- 제 1 항에 있어서,상기 촉매는 알루미늄, 알루미늄을 함유하는 화합물 또는 3d 천이금속계 화합물을 포함하는, 단결정 그래핀의 제조방법.
- 제 8 항에 있어서,상기 다결정 그래핀 및 상기 촉매를 열처리함으로써, 상기 다결정 그래핀을 단결정 그래핀으로 재결정화하는 단계는 1400℃ 내지 2000℃의 온도에서 수행되는, 단결정 그래핀의 제조방법.
- 제 1 항에 있어서,상기 열처리는 국부적 가열원을 이용하여 상기 다결정 그래핀 및 상기 촉매의 제 1 부분을 가열하는 단계; 및 상기 국부적 가열원을 이동시켜 상기 제 1 부분을 냉각시킴과 동시에 다른 위치의 제 2 부분을 가열하는 단계;를 포함하여 수행되는, 단결정 그래핀의 제조방법.
- 제 10 항에 있어서,상기 열처리는 상기 기판의 일측에서 타측으로 일방향으로 상기 국부적 가열원을 이동시켜 수행되는, 단결정 그래핀의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016555437A JP2016538236A (ja) | 2013-12-30 | 2014-12-26 | 単結晶グラフェンの製造方法 |
US15/103,368 US9834855B2 (en) | 2013-12-30 | 2014-12-26 | Method for manufacturing monocrystalline graphene |
EP14877483.9A EP3091106B1 (en) | 2013-12-30 | 2014-12-26 | Method for manufacturing monocrystalline graphene |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0167109 | 2013-12-30 | ||
KR1020130167109A KR101572066B1 (ko) | 2013-12-30 | 2013-12-30 | 단결정 그래핀의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015102318A1 true WO2015102318A1 (ko) | 2015-07-09 |
Family
ID=53493610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2014/012902 WO2015102318A1 (ko) | 2013-12-30 | 2014-12-26 | 단결정 그래핀의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9834855B2 (ko) |
EP (1) | EP3091106B1 (ko) |
JP (1) | JP2016538236A (ko) |
KR (1) | KR101572066B1 (ko) |
WO (1) | WO2015102318A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017031005A (ja) * | 2015-07-31 | 2017-02-09 | 川研ファインケミカル株式会社 | グラフェン被覆窒化アルミニウムフィラー、その製造方法、電子材料、樹脂複合体、及び疎水化処理方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9863885B2 (en) | 2015-10-07 | 2018-01-09 | The Regents Of The University Of Californa | Graphene-based multi-modal sensors |
KR102106781B1 (ko) * | 2017-11-30 | 2020-05-06 | 성균관대학교산학협력단 | 단결정 금속 박막 및 이의 제조 방법 |
KR102082694B1 (ko) * | 2018-05-09 | 2020-02-28 | 한국과학기술연구원 | 그래핀 적용 대상의 표면에 그래핀을 직접 합성하는 방법 및 상기 방법을 이용하여 형성된 그래핀을 포함하는 소자 |
KR102672480B1 (ko) * | 2019-08-30 | 2024-06-07 | 한국전력공사 | 도핑 그래핀의 제조 방법 및 이에 의해 제조된 도핑 그래핀 |
CN117448969A (zh) * | 2023-11-02 | 2024-01-26 | 天津大学 | 一种超大单晶畴半导体石墨烯及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110140115A (ko) * | 2011-10-24 | 2011-12-30 | 에스 알 씨 주식회사 | 단일 방위의 면을 가지는 면심입방격자 금속촉매상에서 그래핀을 제조하는 방법 |
KR20120099917A (ko) * | 2011-03-02 | 2012-09-12 | 세종대학교산학협력단 | 그래핀 배선 형성 방법 |
KR20130000964A (ko) * | 2011-06-24 | 2013-01-03 | 삼성전자주식회사 | 그래핀 제조방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326022A (ja) * | 1993-03-16 | 1994-11-25 | Mitsubishi Electric Corp | 半導体基板の製造方法,半導体装置の製造方法,及び,半導体製造装置 |
KR101344493B1 (ko) * | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
KR101611410B1 (ko) * | 2009-04-07 | 2016-04-11 | 삼성전자주식회사 | 그래핀의 제조 방법 |
EP2460481A1 (de) * | 2010-12-01 | 2012-06-06 | FACET-LINK Inc. | Fusionsimplantat für Facettengelenke |
KR101993382B1 (ko) * | 2011-05-06 | 2019-06-27 | 삼성전자주식회사 | 기판상의 그래핀 및 상기 기판상 그래핀의 제조방법 |
US9845551B2 (en) * | 2012-07-10 | 2017-12-19 | William Marsh Rice University | Methods for production of single-crystal graphenes |
US10053366B2 (en) * | 2012-12-12 | 2018-08-21 | William Marsh Rice Univerisity | Methods of controllably forming bernal-stacked graphene layers |
US9284640B2 (en) * | 2013-11-01 | 2016-03-15 | Advanced Graphene Products Sp. Z.O.O. | Method of producing graphene from liquid metal |
-
2013
- 2013-12-30 KR KR1020130167109A patent/KR101572066B1/ko active IP Right Grant
-
2014
- 2014-12-26 EP EP14877483.9A patent/EP3091106B1/en active Active
- 2014-12-26 JP JP2016555437A patent/JP2016538236A/ja active Pending
- 2014-12-26 US US15/103,368 patent/US9834855B2/en active Active
- 2014-12-26 WO PCT/KR2014/012902 patent/WO2015102318A1/ko active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120099917A (ko) * | 2011-03-02 | 2012-09-12 | 세종대학교산학협력단 | 그래핀 배선 형성 방법 |
KR20130000964A (ko) * | 2011-06-24 | 2013-01-03 | 삼성전자주식회사 | 그래핀 제조방법 |
KR20110140115A (ko) * | 2011-10-24 | 2011-12-30 | 에스 알 씨 주식회사 | 단일 방위의 면을 가지는 면심입방격자 금속촉매상에서 그래핀을 제조하는 방법 |
Non-Patent Citations (2)
Title |
---|
BARATON, L. ET AL.: "On the Mechanisms of Precipitation of Graphene on Nickel Thin Films", A LETTERS JOURNAL EXPLORING THE FRONTIERS OF PHYSICS., vol. 96, no. 4, November 2011 (2011-11-01), XP002695353 * |
See also references of EP3091106A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017031005A (ja) * | 2015-07-31 | 2017-02-09 | 川研ファインケミカル株式会社 | グラフェン被覆窒化アルミニウムフィラー、その製造方法、電子材料、樹脂複合体、及び疎水化処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2016538236A (ja) | 2016-12-08 |
US20170009371A1 (en) | 2017-01-12 |
EP3091106B1 (en) | 2019-02-13 |
US9834855B2 (en) | 2017-12-05 |
EP3091106A4 (en) | 2017-08-02 |
KR101572066B1 (ko) | 2015-11-26 |
EP3091106A1 (en) | 2016-11-09 |
KR20150078047A (ko) | 2015-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015102318A1 (ko) | 단결정 그래핀의 제조방법 | |
Huang et al. | Growth of single-layer and multilayer graphene on Cu/Ni alloy substrates | |
US9355842B2 (en) | Direct and sequential formation of monolayers of boron nitride and graphene on substrates | |
US8632855B2 (en) | Methods of preparing a graphene sheet | |
US10319589B2 (en) | High performance thin films from solution processible two-dimensional nanoplates | |
US8158200B2 (en) | Methods of forming graphene/(multilayer) boron nitride for electronic device applications | |
JP5748766B2 (ja) | 基材へのグラフェンの広範囲析出およびそれを含む製品 | |
EP2994933B1 (en) | Direct and sequential formation of monolayers of boron nitride and graphene on substrates | |
Shtepliuk et al. | Combining graphene with silicon carbide: synthesis and properties–a review | |
US20150023858A1 (en) | Rebar hybrid materials and methods of making the same | |
TW201111278A (en) | Large area deposition and doping of graphene, and products including the same | |
US20130022813A1 (en) | Method for preparing graphene nanoribbon on insulating substrate | |
KR101886659B1 (ko) | 무전사식 그래핀층의 형성 방법 | |
Zhou et al. | Atomically sharp interlayer stacking shifts at anti-phase grain boundaries in overlapping MoS 2 secondary layers | |
CN103215548B (zh) | 一种金属纳米颗粒掺杂石墨烯的制备方法 | |
KR20150116570A (ko) | 플라즈마 화학기상증착 프로세스의 전계제어기법을 이용한 그래핀 나노월 성장 방법 | |
EP3356582B1 (en) | Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt | |
US10246795B2 (en) | Transfer-free method for forming graphene layer | |
Zhang et al. | Twist the doorknob to open the electronic properties of graphene-based van der Waals structure | |
Wu et al. | Three step fabrication of graphene at low temperature by remote plasma enhanced chemical vapor deposition | |
Sato et al. | Graphene—Novel material for nanoelectronics | |
KR102109930B1 (ko) | 보론 나이트라이드(bn) 층의 연속적인 형성 방법, 이를 이용한 전계 효과 트랜지스터 소자의 제조 방법, 및 이로부터 제조된 전계 효과 트랜지스터 | |
KR20130089041A (ko) | 성장 방향이 제어된 그래핀의 제조 방법 | |
CN110775964B (zh) | 铝掺杂石墨烯材料的制备方法 | |
Shan et al. | Copper Acetate-Facilitated Transfer-Free Growth of High-Quality Graphene Advancing Hydrovoltaic Electricity Generators |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14877483 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016555437 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15103368 Country of ref document: US |
|
REEP | Request for entry into the european phase |
Ref document number: 2014877483 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014877483 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |