WO2015093530A1 - 被覆工具 - Google Patents
被覆工具 Download PDFInfo
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- WO2015093530A1 WO2015093530A1 PCT/JP2014/083412 JP2014083412W WO2015093530A1 WO 2015093530 A1 WO2015093530 A1 WO 2015093530A1 JP 2014083412 W JP2014083412 W JP 2014083412W WO 2015093530 A1 WO2015093530 A1 WO 2015093530A1
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- aluminum oxide
- oxide layer
- hkl
- layer
- peak
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
Definitions
- the present invention relates to a coated tool having a coating layer on the surface of a substrate.
- Such cutting tools are increasingly used in heavy interrupted cutting where a large impact is applied to the cutting edge in accordance with the recent improvement in cutting efficiency. Under such severe cutting conditions, a large amount of coating is required. In order to suppress chipping due to impact and peeling of the coating layer, improvements in fracture resistance and wear resistance are required.
- Patent Document 1 optimizes the particle size and thickness of the aluminum oxide layer and sets the (012) plane organization coefficient (Texture Coefficient: 1). .3 or more, a technique capable of forming a dense aluminum oxide layer having high fracture resistance is disclosed. Further, in Patent Document 2, by making the organization coefficient in the (012) plane of the aluminum oxide layer 2.5 or more, the residual stress in the aluminum oxide layer is easily released, so that the fracture resistance of the aluminum oxide layer is improved. A technique capable of improving the above is disclosed.
- Patent Document 3 as a technique for improving the wear resistance in the cutting tool, an aluminum oxide layer located immediately above the intermediate layer is formed by laminating two or more unit layers exhibiting different X-ray diffraction patterns. The technique which can improve the intensity
- Patent Document 4 the (006) plane orientation coefficient of the aluminum oxide layer is increased to 1.8 or more, and the peak intensity ratio I (104) / I (110) between the (104) plane and the (110) plane is A cutting tool controlled to a predetermined range is disclosed.
- the peak intensity ratio I (104) / I (012) between the (104) plane and the (012) plane of the aluminum oxide layer is set to be higher than that of the first plane below the aluminum oxide layer.
- a cutting tool that is larger in surface is disclosed.
- Japanese Patent No. 6-316758 Japanese Patent Laid-Open No. 2003-025114 Japanese Patent Laid-Open No. 10-204639 JP 2013-132717 A JP 2009-202264 A
- the coating layer has insufficient wear resistance and fracture resistance.
- minute chipping occurs in the aluminum oxide layer, and this triggers the wear to easily progress, and further improvement of the aluminum oxide layer has been demanded.
- the coated tool of this embodiment includes a base and a coating layer provided on the surface of the base. Having a cutting edge and a flank on the coating layer;
- the coating layer includes at least a portion in which a titanium carbonitride layer and an aluminum oxide layer having an ⁇ -type crystal structure are sequentially laminated, Based on the peak of the aluminum oxide layer analyzed by X-ray diffraction analysis, when the value represented by the following formula is the orientation coefficient Tc (hkl), The orientation coefficient Tc1 (0 1 14) measured from the surface side of the aluminum oxide layer on the flank side is 1.0 or more.
- Orientation coefficient Tc (hkl) ⁇ I (hkl) / I 0 (hkl) ⁇ / [(1/8) ⁇ ⁇ ⁇ I (HKL) / I 0 (HKL) ⁇ ]
- (HKL) is the crystal plane of (012), (104), (110), (113), (024), (116), (124), (0 1 14)
- I (HKL) and I (hkl) are the peak intensities I 0 (HKL) and I 0 (hkl) of the peaks attributed to the respective crystal planes detected in the X-ray diffraction analysis of the aluminum oxide layer are JCPDS cards No. Standard diffraction intensities of crystal planes described in 43-1484
- the peak orientation coefficient Tc1 (0 1 14) measured from the surface side of the aluminum oxide layer on the flank face is as high as 1.0 or more, so that chipping of the aluminum oxide layer is suppressed and resistance to resistance is increased. Abrasion is improved and the coated tool can be used for a long time.
- the intersecting ridge portion formed by the rake face 2 and the flank face 3 forms a cutting edge 4.
- the tool 1 includes a base 5 and a coating layer 6 provided on the surface of the base 5.
- the covering layer 6 is formed by laminating a lower layer 7, a titanium carbonitride layer 8, an intermediate layer 9, an aluminum oxide layer 10, and a surface layer 11 in this order from the substrate 5 side.
- the aluminum oxide layer 10 has an ⁇ -type crystal structure.
- the value represented by the following formula is defined as the orientation coefficient Tc (hkl) at the peak of the aluminum oxide layer 10 by X-ray diffraction analysis.
- Orientation coefficient Tc (hkl) ⁇ I (hkl) / I 0 (hkl) ⁇ / [(1/8) ⁇ ⁇ ⁇ I (HKL) / I 0 (HKL) ⁇ ]
- (HKL) is the crystal plane I (HKL) and I of (012), (104), (110), (113), (024), (116), (124), (0 1 14).
- Hkl is the peak intensity I 0 (HKL) and I 0 (hkl) of the peak attributed to each crystal plane detected in the X-ray diffraction analysis of the aluminum oxide layer 10 according to JCPDS card no. 43-1484, the standard diffraction intensity of each crystal plane, and the orientation coefficient Tc1 of the surface side peak measured from the surface side of the aluminum oxide layer 10 on the flank 3 side, and the aluminum oxide layer 10 on the flank 3 side.
- the orientation coefficient at the substrate-side peak detected by measurement in a state where only a substrate-side portion of the aluminum oxide layer 10 is left is Tc2, and from the surface side of the aluminum oxide layer 10 on the rake face 2 side. It is defined as the orientation coefficient Tc3 of the surface side peak to be measured.
- the orientation coefficient Tc1 (0 1 14) is 1.0 or more. Thereby, the wear resistance of the aluminum oxide layer 10 is improved. As a result, the tool 1 can be used for a long time.
- the orientation coefficient Tc1 (0 1 14) increases, that is, the ratio of the peak intensity I (0 1 14) of the (0 1 14) plane increases, the film formation direction (surface) from the surface side of the aluminum oxide layer 10 increases. It is considered that the aluminum oxide crystal constituting the aluminum oxide layer 10 is easily deformed against an impact applied in a direction perpendicular to the direction, and resistance to breakage is increased.
- Tc1 (0 ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ 1 14)
- Tc1 0.05 ⁇ ⁇ ⁇ ⁇ ⁇ 1 14
- the minute chipping generated on the surface of the aluminum oxide layer 10 is suppressed, and the wear caused by the minute chipping progresses. It seems to be able to suppress this.
- a particularly desirable range of Tc1 (0 1 14) is 1.3 to 10, a particularly desirable range is 1.5 to 5, and a further desirable range is 2.0 to 3.5.
- Tc1 (0 1 14) and Tc2 (0 1 14) are compared, Tc1 (0 1 14) is larger than Tc2 (0 1 14). That is, Tc2 (0 1 14) is smaller than Tc1 (0 1 14).
- Tc2 (0 1 14) is larger than Tc1 (0 1 14).
- Tc2 (0 1 14) is smaller than Tc1 (0 1 14).
- Tc2 (0 1 14) increases, the coefficient of thermal expansion in the direction parallel to the surface of the aluminum oxide layer 10 and the surface of the intermediate layer 9 and the titanium carbonitride layer 8 below the aluminum oxide layer 10 are parallel. The difference from the coefficient of thermal expansion in the direction increases, and the aluminum oxide layer 10 tends to be peeled off from the intermediate layer 9 and the titanium carbonitride layer 8.
- Tc2 (0 1 14) of the aluminum oxide layer 10 peeling of the aluminum oxide layer 10 can be suppressed by reducing Tc2 (0 1 14) of the aluminum oxide layer 10.
- a desirable range of Tc2 (0 1 14) is 0.3 to 1.5.
- Tc2 (0 1 14) and Tc1 (0 1 14) of the aluminum oxide layer 10 will be described.
- the X-ray diffraction analysis of the aluminum oxide layer 10 is measured using an X-ray diffraction analysis apparatus using a general CuK ⁇ ray.
- the JCPDS card No In obtaining the peak intensity of each crystal plane of the aluminum oxide layer 10 from the X-ray diffraction chart, the JCPDS card No.
- the diffraction angle of each crystal face described in 43-1484 is confirmed, the crystal face of the detected peak is identified, and the peak intensity is measured.
- the peak detected by X-ray diffraction analysis is identified using a JCPDS card, but the peak position may be shifted due to residual stress or the like present in the coating layer 6. Therefore, in order to confirm whether or not the detected peak is the peak of the aluminum oxide layer 10, an X-ray diffraction analysis is performed with the aluminum oxide layer 10 polished, and the peaks detected before and after polishing are compared. To do. From this difference, it can be confirmed that it is the peak of the aluminum oxide layer 10.
- the surface side peak measured from the surface side of the aluminum oxide layer 10 on the flank 3 side is measured.
- the peak intensity of the aluminum oxide layer 10 is measured from the surface side of the aluminum oxide layer 10 to the base 5 side of the aluminum oxide layer 10. More specifically, X-ray diffraction analysis is performed on the coating layer 6 in a state where the surface layer 11 is removed by polishing or in a state where the surface layer 11 is not polished. The peak intensity of each peak obtained is measured to calculate the orientation coefficient Tc1 (hkl).
- a thickness of 20% or less of the thickness of the aluminum oxide layer 10 may be removed.
- Tc2 (hkl) a part of the aluminum oxide layer 10 on the flank 3 side is polished, and the peak intensity is measured in a state where only the substrate side portion of the aluminum oxide layer 10 is left.
- the aluminum oxide layer 10 of the coating layer 6 is polished to a thickness of 10 to 40% with respect to the thickness of the aluminum oxide layer 10 before polishing. Polishing is performed by brush processing using diamond abrasive grains, processing by an elastic grindstone, or blast processing. Thereafter, the polished portion of the aluminum oxide layer 10 is subjected to X-ray diffraction analysis under the same conditions as those in the surface side portion of the aluminum oxide layer 10, the peak of the aluminum oxide layer 10 is measured, and the orientation coefficient Tc2 ( hkl) is calculated.
- orientation coefficient Tc is an index representing the degree of orientation of each crystal plane because it is determined by the ratio to the non-oriented standard data defined by the JCPDS card. Further, “(hkl)” of Tc (hkl) indicates a crystal plane for calculating the orientation coefficient.
- I (104) and I (116) are the first and second strongest in the surface side peak measured from the surface side of the aluminum oxide layer 10 on the flank 3 side. .
- I (0 1 14) is the peak intensity within the eighth, and particularly preferably the third to sixth peak intensity.
- Tc1 (104) at the surface side peak of the aluminum oxide layer on the flank 3 side is larger than Tc3 (104) at the substrate side peak of the aluminum oxide layer on the flank 3 side.
- Tc1 (104) is larger than Tc3 (104)
- the chipping resistance of the aluminum oxide layer 10 is not sufficiently improved, and Tc1 (0 1 14) is 1.0 or more. It was found that the crater wear resistance of the aluminum oxide layer 10 is greatly improved.
- the orientation coefficient Tc3 (104) is smaller than Tc1 (104).
- the titanium carbonitride layer 8 is a laminate in which a so-called MT (Moderate Temperature) -titanium carbonitride layer 8a and HT-titanium carbonitride layer 8b are present in this order from the substrate side.
- the MT-titanium carbonitride layer 8a is made of columnar crystals containing acetonitrile (CH 3 CN) gas as a raw material and formed at a relatively low film formation temperature of 780 to 900 ° C.
- the HT (High Temperature) -titanium carbonitride layer 8b is made of granular crystals formed at a high film formation temperature of 950 to 1100.degree.
- the surface of the HT-titanium carbonitride layer 8b is formed with triangular projections in a cross-sectional view that tapers toward the aluminum oxide layer 10, thereby increasing the adhesion of the aluminum oxide layer 10. Further, peeling and chipping of the coating layer 6 can be suppressed.
- the intermediate layer 9 is provided on the surface of the HT-titanium carbonitride layer 8b.
- the intermediate layer 9 contains titanium and oxygen, and is made of, for example, TiAlCNO, TiCNO, or the like.
- FIG. 2 is made up of a lower intermediate layer 9a and an upper intermediate layer 9b on which these are laminated.
- the aluminum oxide particles constituting the aluminum oxide layer 10 have an ⁇ -type crystal structure.
- the aluminum oxide layer 10 having an ⁇ -type crystal structure has high hardness, and can improve the wear resistance of the coating layer 6.
- the intermediate layer 9 has a laminated structure of the lower intermediate layer 9a made of TiAlCNO and the upper intermediate layer 9b made of TiCNO, there is an effect of improving the fracture resistance of the cutting tool 1.
- the titanium carbonitride layer 8 is provided with a thickness of 6.0 to 13.0 ⁇ m, and the intermediate layer 9 is provided with a thickness of 0.05 to 0.5 ⁇ m.
- the lower layer 7 and the surface layer 11 are made of titanium nitride. In other embodiments, at least one of the lower layer 7 and the surface layer 11 may not be provided.
- the lower layer 7 is provided with a thickness of 0.1 to 1.0 ⁇ m
- the surface layer 11 is provided with a thickness of 0.1 to 3.0 ⁇ m.
- each layer and the properties of the crystals constituting each layer should be measured by observing an electron micrograph (scanning electron microscope (SEM) photograph or transmission electron microscope (TEM) photograph) in the cross section of the tool 1. Is possible.
- the crystal form of the crystals constituting each layer of the coating layer 6 is columnar.
- the average ratio of the average crystal width to the length in the thickness direction of the coating layer 6 of each crystal is 0 on average. .3 or less states.
- the crystal form is defined as granular.
- the base 5 of the tool 1 is a hard material composed of tungsten carbide (WC) and, if desired, at least one selected from the group consisting of carbides, nitrides, and carbonitrides of Group 4, 5, and 6 metals of the periodic table.
- Cemented carbide, Ti-based cermet, or Si 3 N 4 , Al 2 O 3 , diamond, cubic nitridation in which phases are bonded with a binder phase composed of an iron group metal such as cobalt (Co) or nickel (Ni) Ceramics such as boron (cBN) can be used.
- substrate 5 may consist of a cemented carbide or a cermet from the point of a fracture resistance and abrasion resistance. Further, depending on the application, the base 5 may be made of a metal such as carbon steel, high-speed steel, or alloy steel.
- the said cutting tool applies the cutting edge 4 formed in the cross
- the coated tool of the present embodiment can be applied to various uses such as an excavation tool and a blade, and in this case also has excellent mechanical reliability.
- metal powder, carbon powder, etc. are appropriately added to and mixed with inorganic powder such as metal carbide, nitride, carbonitride, oxide, etc. that can form a hard alloy to be the base 5 by firing, press molding, casting
- inorganic powder such as metal carbide, nitride, carbonitride, oxide, etc. that can form a hard alloy to be the base 5 by firing, press molding, casting
- the substrate 5 made of the hard alloy described above is fired in a vacuum or non-oxidizing atmosphere. Make it. Then, the surface of the substrate 5 is subjected to polishing or honing of the cutting edge as desired.
- CVD chemical vapor deposition
- a mixed gas composed of 0.5 to 10% by volume of titanium tetrachloride (TiCl 4 ) gas, 10 to 60% by volume of nitrogen (N 2 ) gas, and the balance of hydrogen (H 2 ) gas is prepared as a reaction gas composition.
- TiCl 4 titanium tetrachloride
- N 2 nitrogen
- H 2 hydrogen
- the reaction gas composition is 0.5 to 10% by volume of titanium tetrachloride (TiCl 4 ) gas, 5 to 60% by volume of nitrogen (N 2 ) gas, and 0.1% of acetonitrile (CH 3 CN) gas as the reaction gas composition.
- An MT-titanium carbonitride layer is prepared by adjusting a mixed gas consisting of 1 to 3.0% by volume and the remainder of hydrogen (H 2 ) gas into the chamber and setting the film forming temperature to 780 to 880 ° C. and 5 to 25 kPa. Is deposited.
- the average crystal width of the titanium carbonitride columnar crystals constituting the titanium carbonitride layer is more on the surface side than on the substrate side. This can be a larger configuration.
- an HT-titanium carbonitride layer constituting the upper portion of the titanium carbonitride layer 8 is formed.
- the specific film forming conditions of the HT-titanium carbonitride layer are as follows: titanium tetrachloride (TiCl 4 ) gas is 1 to 4% by volume, nitrogen (N 2 ) gas is 5 to 20% by volume, A mixed gas composed of 0.1 to 10% by volume of methane (CH 4 ) gas and the remaining hydrogen (H 2 ) gas is prepared and introduced into the chamber, and the film forming temperature is set to 900 to 1050 ° C. and 5 to 40 kPa. Form a film.
- the intermediate layer 9 is produced.
- the specific film forming conditions for this embodiment are as follows.
- TiCl 4 ) gas is 3 to 30% by volume
- methane (CH 4 ) gas is 3 to 15% by volume
- nitrogen (N 2 ) 5-10% by volume of gas 0.5-1% by volume of carbon monoxide (CO) gas
- AlCl 3 aluminum trichloride
- the mixed gas consisting of These mixed gases are adjusted and introduced into the chamber to form a film at a film forming temperature of 900 to 1050 ° C. and 5 to 40 kPa.
- an intermediate layer 9 having irregularities on the surface of the titanium carbonitride layer 8 is formed.
- titanium tetrachloride (TiCl 4 ) gas is 3 to 15% by volume
- methane (CH 4 ) gas is 3 to 10% by volume
- nitrogen (N 2 ) gas is 10 to 25%.
- a mixed gas comprising volume%, carbon monoxide (CO) gas in an amount of 1 to 5 volume%, and the remainder consisting of hydrogen (H 2 ) gas is prepared.
- These mixed gases are adjusted and introduced into the chamber to form a film at a film forming temperature of 900 to 1050 ° C. and 5 to 40 kPa.
- the nitrogen (N 2 ) gas may be changed to argon (Ar) gas.
- an aluminum oxide layer 10 is formed.
- nuclei of aluminum oxide crystals are formed. 5 to 10% by volume of aluminum trichloride (AlCl 3 ) gas, 0.1 to 1.0% by volume of hydrogen chloride (HCl) gas, 0.1 to 5.0% by volume of carbon dioxide (CO 2 ) gas, A mixed gas consisting of hydrogen (H 2 ) gas is used, and the temperature is set to 950 to 1100 ° C. and 5 to 10 kPa.
- AlCl 3 aluminum trichloride
- HCl hydrogen chloride
- CO 2 carbon dioxide
- a mixed gas consisting of hydrogen (H 2 ) gas is used, and the temperature is set to 950 to 1100 ° C. and 5 to 10 kPa.
- AlCl 3 aluminum trichloride
- HCl hydrogen chloride
- CO 2 carbon dioxide
- TiN layer 11 a surface layer (TiN layer) 11 is formed as desired.
- Specific film forming conditions are as follows: titanium tetrachloride (TiCl 4 ) gas is 0.1 to 10% by volume, nitrogen (N 2 ) gas is 10 to 60% by volume, and the remainder is hydrogen (H 2 ) gas.
- a mixed gas consisting of the above is adjusted and introduced into the chamber, and the film is formed at a film forming temperature of 960 to 1100 ° C. and 10 to 85 kPa.
- At least the cutting edge portion of the surface of the formed coating layer 6 is polished.
- the cutting edge portion is processed smoothly, the welding of the work material is suppressed, and the tool is further excellent in fracture resistance.
- a coating layer was formed on the cemented carbide substrate by the chemical vapor deposition (CVD) method under the film formation conditions shown in Table 1 to produce a cutting tool.
- CVD chemical vapor deposition
- the surface side peak the highest intensity peak and the second highest intensity peak were confirmed, and the (0 ⁇ 1 14) plane, (104) plane, and (116) plane of each crystal plane of the JCPDS card were also confirmed.
- An orientation coefficient Tc1 (hkl) was calculated.
- the flank is polished until it becomes 10 to 40% of the thickness of the aluminum oxide layer.
- a part of the aluminum oxide layer is polished to leave only the substrate side portion.
- the substrate-side peak (denoted as the substrate side in the table) measured in step 1 and the peak intensity of each peak were measured.
- Sample No. Tc1 (011 14) is 1.0 or more. In Nos. 1 to 7, minute chipping of the aluminum oxide layer was suppressed, and almost no peeling occurred. In particular, in the surface side peak of the aluminum oxide layer, the sample No. 1 in which the (104) plane and (116) plane consist of the first and second highest peaks. For samples 1 to 4 and 6, sample no. Compared to 5 and 7, the crater wear width was smaller and the wear resistance was particularly excellent. In addition, the sample No. 1 in which the substrate-side orientation coefficient Tc2 (0 1 14) is smaller than the surface-side orientation coefficient Tc1 (0 1 14). Nos. 1 to 6 had particularly small crater wear. Furthermore, the sample No. 2 in which the orientation coefficient Tc3 (104) of the surface side peak on the rake face is smaller than the orientation coefficient Tc1 (104) of the surface side peak on the flank face. In Nos. 1 to 6, the number of impacts that led to defects was particularly large.
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- Organic Chemistry (AREA)
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Abstract
Description
前記被覆層上に切刃と逃げ面とを有し、
前記被覆層は、少なくとも炭窒化チタン層とα型結晶構造の酸化アルミニウム層とを順に積層した部位を含み、
X線回折分析にて分析される前記酸化アルミニウム層のピークを基に、下記式で表される値を配向係数Tc(hkl)としたとき、
逃げ面側における前記酸化アルミニウム層の表面側から測定される配向係数Tc1(0 1 14)が1.0以上である。
配向係数Tc(hkl)={I(hkl)/I0(hkl)}/〔(1/8)×Σ{I(HKL)/I0(HKL)}〕
ここで、(HKL)は、(012)、(104)、(110)、(113)、(024)、(116)、(124)、(0 1 14)の結晶面、
I(HKL)およびI(hkl)は、前記酸化アルミニウム層のX線回折分析において検出される各結晶面に帰属されるピークのピーク強度
I0(HKL)およびI0(hkl)は、JCPDSカードNo.43-1484に記載された各結晶面の標準回折強度
配向係数Tc(hkl)={I(hkl)/I0(hkl)}/〔(1/8)×Σ{I(HKL)/I0(HKL)}〕
ここで、(HKL)は、(012)、(104)、(110)、(113)、(024)、(116)、(124)、(0 1 14)の結晶面
I(HKL)およびI(hkl)は、酸化アルミニウム層10のX線回折分析において検出される各結晶面に帰属されるピークのピーク強度
I0(HKL)およびI0(hkl)は、JCPDSカードNo.43-1484に記載された各結晶面の標準回折強度
そして、逃げ面3側における酸化アルミニウム層10の表面側から測定される表面側ピークの配向係数Tc1、逃げ面3側において、酸化アルミニウム層10の一部を研磨して、酸化アルミニウム層10の基体側部分のみを残した状態での測定で検出される基体側ピークにおける配向係数をTc2、すくい面2側における酸化アルミニウム層10の表面側から測定される表面側ピークの配向係数Tc3と定義する。
(連続切削条件)
被削材 :クロムモリブデン鋼材(SCM435)
工具形状:CNMG120408
切削速度:300m/分
送り速度:0.3mm/rev
切り込み:1.5mm
切削時間:25分
その他 :水溶性切削液使用
評価項目:走査型電子顕微鏡にて刃先ホーニング部分を観察し、実際に摩耗している部分において、逃げ面におけるフランク摩耗幅と、すくい面におけるクレータ摩耗幅を測定。
(断続切削条件)
被削材 :クロムモリブデン鋼 4本溝入り鋼材(SCM440)
工具形状:CNMG120408
切削速度:300m/分
送り速度:0.3mm/rev
切り込み:1.5mm
その他 :水溶性切削液使用
評価項目:欠損に至る衝撃回数を測定。
2・・・すくい面
3・・・逃げ面
4・・・切刃
5・・・基体
6・・・被覆層
7・・・下層
8・・・炭窒化チタン層
8a・・・MT-炭窒化チタン層
8b・・・HT-炭窒化チタン層
9・・・中間層
9a・・・下部中間層
9b・・・上部中間層
10・・酸化アルミニウム層
11・・・表層
Claims (4)
- 基体と、該基体の表面に設けられた被覆層とを備え、
前記被覆層上に切刃と逃げ面とを有し、
前記被覆層は、少なくとも炭窒化チタン層とα型結晶構造の酸化アルミニウム層とを順に積層した部位を含み、
X線回折分析にて分析される前記酸化アルミニウム層のピークを基に、下記式で表される値を配向係数Tc(hkl)としたとき
逃げ面側における前記酸化アルミニウム層の表面側から測定される配向係数Tc1(0 1 14)が1.0以上である被覆工具。
配向係数Tc(hkl)={I(hkl)/I0(hkl)}/〔(1/8)×Σ{I(HKL)/I0(HKL)}〕
ここで、(HKL)は、(012)、(104)、(110)、(113)、(024)、(116)、(124)、(0 1 14)の結晶面、
I(HKL)およびI(hkl)は、前記酸化アルミニウム層のX線回折分析において検出される各結晶面に帰属されるピークのピーク強度
I0(HKL)およびI0(hkl)は、JCPDSカードNo.43-1484に記載された各結晶面の標準回折強度 - 前記逃げ面側の前記酸化アルミニウム層の一部を研磨して、当該酸化アルミニウム層の基体側部分のみを残した状態での測定で検出される配向係数Tc2(0 1 14)が、前記Tc1(0 1 14)よりも小さい請求項1に記載の被覆工具。
- 前記逃げ面側における前記酸化アルミニウム層の表面側から測定される表面側ピークにおいて、I(104)およびI(116)が一番目と二番目に強い請求項1または2に記載の被覆工具。
- 前記被覆層上にさらにすくい面を有し、該すくい面側における前記酸化アルミニウム層の表面側から測定される配向係数Tc3(104)が、前記逃げ面側における前記酸化アルミニウム層の表面側から測定される配向係数Tc1(104)よりも小さい請求項1乃至3のいずれかに記載の被覆工具。
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KR1020167015991A KR101822514B1 (ko) | 2013-12-17 | 2014-12-17 | 피복공구 |
EP14872531.0A EP3085478B1 (en) | 2013-12-17 | 2014-12-17 | Coated tool |
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KR20160088351A (ko) | 2016-07-25 |
EP3085478B1 (en) | 2019-04-10 |
JPWO2015093530A1 (ja) | 2017-03-23 |
EP3085478A1 (en) | 2016-10-26 |
KR101822514B1 (ko) | 2018-01-26 |
EP3085478A4 (en) | 2017-08-02 |
CN105828991B (zh) | 2017-12-01 |
US10174421B2 (en) | 2019-01-08 |
US20160326641A1 (en) | 2016-11-10 |
JP5890594B2 (ja) | 2016-03-22 |
CN105828991A (zh) | 2016-08-03 |
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