WO2015063973A1 - 半導体レーザ光源 - Google Patents
半導体レーザ光源 Download PDFInfo
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- WO2015063973A1 WO2015063973A1 PCT/JP2014/003398 JP2014003398W WO2015063973A1 WO 2015063973 A1 WO2015063973 A1 WO 2015063973A1 JP 2014003398 W JP2014003398 W JP 2014003398W WO 2015063973 A1 WO2015063973 A1 WO 2015063973A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Definitions
- the present invention relates to a semiconductor laser light source.
- Semiconductor light emitting devices such as semiconductor lasers and light emitting diodes have come to be used as light sources for lighting devices and display devices in place of lamps with short lifetimes.
- a laser light source that has a small light emitting area, can easily combine outputs, and has a large reproduction color gamut due to its monochromaticity is promising.
- speckle noise a phenomenon peculiar to a laser that looks like a speckled pattern.
- the interval between the waveguides arranged in the center is larger than the interval between the waveguides arranged at the end of the plurality of waveguides.
- the semiconductor laser array is configured to have different stress distributions in the arrangement direction of the laser light emitting end faces, thereby providing a wide range of wavelengths oscillated from the semiconductor laser light source. Thus, speckle noise is reduced (for example, see Patent Document 2).
- the conventional semiconductor laser light source has a problem that productivity is lowered because the interval between the waveguides is changed or the stress applied to the chip of the laser array is controlled in the production process.
- An object of the present invention is to solve the above-described problems, and is to obtain a semiconductor laser light source capable of reducing speckle noise while suppressing a decrease in productivity.
- a semiconductor laser light source includes a plurality of semiconductor lasers, a semiconductor laser array in which stripes of a plurality of semiconductor lasers are arranged at equal intervals in the width direction of the stripe, and a semiconductor laser array on which the semiconductor laser array is mounted.
- the second region of the second surface facing the first region of the surface is in contact with the heat radiation portion other than the central semiconductor laser in the stripe width direction.
- a heat sink is provided which is smaller in terms of the area per semiconductor laser than the area of the fourth region of the second surface of the first surface facing the third region.
- Another semiconductor laser light source includes a plurality of semiconductor lasers, a semiconductor laser array in which stripes of a plurality of semiconductor lasers are arranged at equal intervals in the width direction of the stripes, and a semiconductor laser array A third surface to be mounted and a fourth surface facing the third surface and in contact with the cooling portion, and a heat radiation portion of the semiconductor laser on the center side in the width direction of the stripe among the plurality of semiconductor lasers
- a heat sink having a higher thermal conductivity than the material of the first part corresponding to the fifth region in contact with the material of the second part corresponding to the sixth region with which the heat radiating part other than the semiconductor laser on the center side contacts. It is provided with.
- a semiconductor laser light source capable of reducing speckle noise while suppressing a decrease in productivity can be obtained.
- FIG. 1 is a structural diagram of a semiconductor laser light source 100 according to Embodiment 1 of the present invention.
- the semiconductor laser array 2 has a plurality of semiconductor lasers, and stripes (not shown) of the plurality of semiconductor lasers are arranged at equal intervals in the width direction of the stripes.
- a laser beam emitting end face 1 is provided.
- the heat sink 3a has a first surface on which the semiconductor laser array 2 is mounted, and a second surface facing the first surface.
- the semiconductor laser array 2 is configured such that the heat generated by each semiconductor laser is radiated by the heat radiation portion of each semiconductor laser being in contact with the first surface of the heat sink 3a.
- the cooling unit 4 that cools the heat sink 3a is joined to the second surface of the heat sink 3a.
- stripes for emitting current when supplying current to the semiconductor laser array 2 and stripe electrodes for supplying current to the stripes are not shown, the horizontal direction in FIG. 1 is the length direction of the stripes and the longitudinal direction in FIG. Is the width direction of the stripe.
- Each semiconductor laser constituting the semiconductor laser array 2 emits a laser beam from the emission end face 1 when a current is supplied, and at the same time, the temperature of each semiconductor laser rises. If the temperature of each of the semiconductor lasers constituting the semiconductor laser array 2 is excessively increased, the light emission efficiency is decreased and the output of the semiconductor laser light source 100 is decreased. Therefore, heat is radiated by the heat sink 3a.
- the heat sink 3a is made of a material having good thermal conductivity such as copper.
- the cooling unit 4 is configured using a Peltier element, a chiller, and the like.
- the semiconductor laser on the center side in the width direction of the stripe shown in FIG. 1 is referred to as a semiconductor laser group 2a1, and the semiconductor laser group 2a1
- the semiconductor lasers on both end sides other than are referred to as a semiconductor laser group 2a2.
- the center side of the heat sink 3a is referred to as a first portion 3a1, and both end sides are referred to as a second portion 3a2.
- the heat radiating portion of the semiconductor laser group 2a1 is in contact with the first portion 3a1 on the center side, and the heat radiating portion of the semiconductor laser group 2a2 is in contact with the second portion 3a2 on both ends. ing. Furthermore, the first part 3a1 and the second part 3a2 of the heat sink 3a are in contact with the cooling unit 4 on the surface.
- a region included in the first surface on the surface of the first portion 3a1 is referred to as a first region
- a region included in the first surface on the surface of the second portion 3a2 is a third region. It shall be called the area of.
- a region included in the second surface on the surface of the first portion 3a1 is referred to as a second region, and a region included in the second surface on the surface of the second portion 3a2 is referred to as a fourth region.
- the heat generated in the semiconductor laser group 2a1 is dissipated when the first region of the first portion 3a1 of the heat sink 3a comes into contact with the surface, and the second region of the first portion 3a1 and the cooling unit 4 are exposed to the surface. It is cooled by contacting with.
- the heat generated in the semiconductor laser group 2a2 is dissipated when the third region of the second portion 3a2 of the sink 3a comes into contact with the surface, and the fourth region of the second portion 3a2 and the cooling unit 4 are exposed to the surface. It is cooled by contacting with.
- the area of the second region is smaller than the area of the fourth region in terms of the area per semiconductor laser.
- conversion means dividing the area by the number of corresponding semiconductor lasers.
- the area of the second region facing the first region where the heat radiating portion of the semiconductor laser group 2a1 is in contact is the fourth region where the area of the second region facing the heat radiating portion of the semiconductor laser group 2a2 is opposite. It is configured to be smaller than the area of the semiconductor laser when converted into the area per semiconductor laser.
- the heat generated in the semiconductor laser array 2 is conducted from the heat radiating portion in the vertical direction with respect to the joint surface between the semiconductor laser array 2 and the heat sink 3a, but is also conducted in the horizontal direction in the heat sink 3a.
- the shape of the heat sink 3a is sufficiently large with respect to the heat spreading direction, heat is efficiently radiated through the cooling unit 4.
- the central area in the width direction of the stripe of the plurality of semiconductor lasers has a smaller contact area with the cooling unit 4 than the end side, so in the process of heat spreading and conducting to the heat sink 3a, A part of the heat is dissipated into the air without passing through the cooling unit 4 from the surface where the heat sink 3 a does not contact the cooling unit 4 before reaching the cooling unit 4.
- the thermal conductivity of air is very small compared to the thermal conductivity of the heat sink 3a and the cooling unit 4, the heat radiation effect is limited. That is, the heat dissipation efficiency becomes non-uniform in the width direction of the stripe among the plurality of semiconductor lasers. As a result, the wavelength width of the semiconductor laser light source 100 is widened, and speckle noise can be reduced.
- the emission intensity per semiconductor laser of the semiconductor laser group 2a1 with a somewhat lower heat dissipation efficiency is lower than the emission intensity per semiconductor laser of the semiconductor laser group 2a2 with high heat dissipation efficiency.
- the number of semiconductor lasers constituting the semiconductor laser group 2a1 is larger than the number of semiconductor lasers constituting the semiconductor laser group 2a2.
- FIG. 2 shows a semiconductor laser light source 200 that is a modification of the configuration of the semiconductor laser light source 100 according to the first embodiment of the present invention.
- the semiconductor laser on the center side in the width direction of the stripe shown in FIG. 2 is called a semiconductor laser group 2b1
- the semiconductor lasers on both ends other than the semiconductor laser group 2b1 are called a semiconductor laser group 2b2.
- the central portion of the heat sink 3b is the first portion 3b1 (in order to distinguish it from the example of the first embodiment shown in FIG. 1, the reference numeral in the modification shown in FIG. 2 is different from that in FIG. 1).
- Both ends are referred to as second portions 3b2 (in order to distinguish them from the example of the first embodiment shown in FIG. 1, the reference numerals in the modification shown in FIG. 2 are different from those in FIG. 1).
- the shape of the heat sink 3b is such that the area per semiconductor laser of the fourth region included in the second surface on the surface of the second portion 3b2 is the center in the width direction of the stripe. You may make it the shape which becomes large gradually from the side to both ends.
- the heat radiation efficiency becomes non-uniform in the width direction of the stripe among the plurality of semiconductor lasers.
- the wavelength width of the semiconductor laser light source 100 is widened and the speckle noise can be reduced.
- FIG. FIG. 3 is a structural diagram of a semiconductor laser light source 300 according to the second embodiment of the present invention.
- the present embodiment is different from the first embodiment in the structure of the heat sink 3c, and is otherwise the same as the first embodiment.
- the center side of the heat sink 3c is referred to as a first portion 3c1 (the reference numeral is different from that of the second embodiment in order to distinguish it from the first embodiment), and both end sides are referred to as the second portion 3c2 (
- symbol is different from other than that.
- the heat sink 3c of the present embodiment has a third surface on which the semiconductor laser array 2 is mounted, and a fourth surface facing the third surface.
- the heat radiating portion of the semiconductor laser group 2a1 is in contact with the first portion 3c1 on the center side
- the heat radiating portion of the semiconductor laser group 2a2 is in contact with the second portion 3c2 on both ends.
- a region included in the third surface on the surface of the first portion 3c1 is referred to as a fifth region
- a region included in the third surface on the surface of the second portion 3c2 is defined as the sixth region. It shall be called the area of.
- the first portion 3c1 and the second portion 3c2 of the heat sink 3c are in contact with the cooling unit 4 at the fourth surface.
- the heat generated in the semiconductor laser group 2a1 is dissipated when the fifth region of the first portion 3c1 of the heat sink 3c comes into contact with the surface, and the first portion 3c1 and the cooling unit 4 come into contact with the surface.
- the heat generated in the semiconductor laser group 2a2 is dissipated when the sixth region of the second portion 3c2 of the heat sink 3c comes into contact with the surface, and the second portion 3c2 and the cooling unit 4 come into contact with the surface.
- the heat sink 3c is made of different materials for the first portion 3c1 and the second portion 3c2.
- the material of the first portion 3c1 has a lower thermal conductivity than the material of the second portion 3c2.
- the material of the second part corresponding to the sixth region with which the heat radiating part of the semiconductor laser group 2a2 is in contact with is higher than the material of the first part corresponding to the fifth region with which the heat radiating part of the semiconductor laser group 2a1 is in contact. It is configured such that the thermal conductivity is higher.
- the semiconductor laser light source 300 since the heat sink 3c is made of different materials on the center side and the end side in the width direction of the stripe among a plurality of semiconductor lasers, the semiconductor laser light source 300 includes a plurality of semiconductor lasers. Among them, the heat radiation efficiency becomes non-uniform in the width direction of the stripe. As a result, the wavelength width of the semiconductor laser light source 300 is widened, and speckle noise can be reduced.
- the present embodiment it is possible to obtain a semiconductor laser light source capable of reducing speckle noise while suppressing a decrease in productivity.
- processing is easy, it is possible to easily cope with manufacturing variations of the semiconductor laser array 2 in order to obtain stable performance.
- the number of semiconductor lasers constituting the semiconductor laser group 2a1 is larger than the number of semiconductor lasers constituting the semiconductor laser group 2a2.
- FIG. 3 shows a semiconductor laser light source 400 that is a first modification of the configuration of the semiconductor laser light source 300 according to the second embodiment of the present invention.
- the center side of the heat sink 3d is referred to as a first portion 3d1 (in order to distinguish it from other examples, the reference numerals are different from those of other examples), and both end sides are referred to as second portions 3d2 (other portions).
- the reference numerals are different from those of the other examples.).
- the heat sink 3d has a second portion 3d2 corresponding to the first portion 3d1.
- the width direction of the stripe includes a portion that gradually increases from the center to both ends.
- the heat radiation efficiency becomes non-uniform in the width direction of the stripe among the plurality of semiconductor lasers.
- the wavelength width of the semiconductor laser light source 400 is widened, and speckle noise can be reduced.
- the speckle noise can be further reduced by increasing the number of semiconductor lasers constituting the semiconductor laser group 2a1 more than the number of semiconductor lasers constituting the semiconductor laser group 2a2. is there.
- FIG. 5 shows a semiconductor laser light source 500 that is a second modification of the configuration of the semiconductor laser light source 300 according to the second embodiment of the present invention.
- the center side of the heat sink 3e is referred to as a first portion 3e1 (in order to distinguish it from other examples, the reference numerals are different from those of other examples), and both end sides are referred to as second portions 3e2 (other In order to distinguish from the examples, the reference numerals are different from those of the other examples.).
- the heat radiating portion of the semiconductor laser group 2a1 is in contact with the first portion 3e1 on the center side
- the heat radiating portion of the semiconductor laser group 2a2 is in contact with the second portion 3e2 on both ends.
- the first portion 3e1 and the second portion 3e2 of the heat sink 3e are in contact with the cooling unit 4 on the surface.
- the first portion 3e1 of the heat sink 3e is hollow. That is, the material of the first portion 3e1 is air. Therefore, the heat radiation efficiency becomes non-uniform in the width direction of the stripe among the plurality of semiconductor lasers. As a result, the wavelength width of the semiconductor laser light source 500 is widened and speckle noise can be reduced. Also in this modification, the speckle noise can be further reduced by increasing the number of semiconductor lasers constituting the semiconductor laser group 2a1 more than the number of semiconductor lasers constituting the semiconductor laser group 2a2. is there.
- 2 semiconductor laser array 2a1 semiconductor laser array group, 2b1 semiconductor laser array group, 3a heat sink, 3a1 first part, 3a2 second part, 3b heat sink, 3b1 first part, 3b2 second part, 3c heat sink, 3c1 first part, 3c2 second part, 3d heat sink, 3d1 first part, 3d2 second part, 3e heat sink, 3e1 first part, 3e2 second part, 100 semiconductor laser light source, 200 semiconductor laser light source, 300 semiconductor laser light source, 400 semiconductor laser light source, 500 semiconductor laser light source.
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体レーザ光源100の構造図である。半導体レーザアレイ2は、複数本の半導体レーザを有すると共に、複数本の半導体レーザのストライプ(図示せず)がストライプの幅方向に等間隔で配列され、半導体レーザアレイ2の端面には各半導体レーザに対応してレーザ光の出射端面部1を有している。ヒートシンク3aは、半導体レーザアレイ2が搭載される第1の面と、第1の面と対向した第2の面とを有している。半導体レーザアレイ2は、各半導体レーザの放熱部がヒートシンク3aの第1の面に接することで、各半導体レーザで発生する熱が放熱されるようにしている。ヒートシンク3aを冷却する冷却部4は、ヒートシンク3aの第2の面と接合される。なお、半導体レーザアレイ2に電流を供給すると発光するストライプ及びストライプに電流を供給するためのストライプ状電極は図示していないが、図1において左右方向がストライプの長さ方向で図1において前後方向がストライプの幅方向となっている。
図3は、本発明の実施の形態2に係る半導体レーザ光源300の構造図である。本実施の形態は、実施の形態1とはヒートシンク3cの構造が異なっており、それ以外は実施の形態1と同様である。ここで、ヒートシンク3cの中央側を第1の部分3c1(実施の形態1と区別するために符号を実施の形態2とは異ならせている。)と呼び、両端側を第2の部分3c2(実施の形態1と区別するために図3に示した実施の形態2の例では符号をそれ以外とは異ならせている。)と呼ぶものとする。
さらに、ヒートシンク3cの第1の部分3c1及び第2の部分3c2は、冷却部4と第4の面で接している。
2b1 半導体レーザアレイ群、3a ヒートシンク、3a1 第1の部分、
3a2 第2の部分、3b ヒートシンク、3b1 第1の部分、3b2 第2の部分、
3c ヒートシンク、3c1 第1の部分、3c2 第2の部分、3d ヒートシンク、3d1 第1の部分、3d2 第2の部分、3e ヒートシンク、3e1 第1の部分、3e2 第2の部分、100 半導体レーザ光源、200 半導体レーザ光源、
300 半導体レーザ光源、400 半導体レーザ光源、500 半導体レーザ光源。
Claims (6)
- 複数本の半導体レーザを有し、前記複数本の半導体レーザのストライプが前記ストライプの幅方向に等間隔で配列された半導体レーザアレイと、
前記半導体レーザアレイが搭載される第1の面と前記第1の面と対向し冷却部が接する第2の面とを有し、前記複数本の半導体レーザのうちで前記ストライプの幅方向において中央側の半導体レーザの放熱部が接する前記第1の面のうちの第1の領域に対向する前記第2の面のうちの第2の領域の面積が前記複数本の半導体レーザのうちで前記ストライプの幅方向において前記中央側の半導体レーザ以外の放熱部が接する前記第1の面のうちの第3の領域に対向する前記第2の面のうちの第4の領域の面積よりも前記半導体レーザ1本当たりの面積に換算すると小さいヒートシンクと、
を備えた半導体レーザ光源。 - 複数本の半導体レーザを有し、前記複数本の半導体レーザのストライプが前記ストライプの幅方向に等間隔で配列された半導体レーザアレイと、
前記半導体レーザアレイが搭載される第3の面と前記第3の面と対向し冷却部が接する第4の面とを有し、前記複数本の半導体レーザのうちで前記ストライプの幅方向において中央側の半導体レーザの放熱部が接する第5の領域に対応する第1の部分の材質よりも前記中央側の半導体レーザ以外の放熱部が接する第6の領域に対応する第2の部分の材質の方が熱伝導率が高いヒートシンクと、
を備えた半導体レーザ光源。 - 前記ヒートシンクは、前記第1の部分の材質が空気であること
を特徴とする請求項2に記載の半導体レーザ光源。 - 前記複数の半導体レーザのうちで、前記中央側の半導体レーザの本数は前記中央側以外の半導体レーザの本数よりも多いこと
を特徴とする請求項1から請求項3のいずれか1項に記載の半導体レーザ光源。 - 前記ヒートシンクは、前記第4の領域の前記半導体レーザ1本当たりの面積が、前記ストライプの幅方向において中央側から両端側にかけて徐々に大きくなっていくこと
を特徴とする請求項1に記載の半導体レーザ光源。 - 前記ヒートシンクは、前記ストライプの長さ方向に見た断面視で前記第1の部分に対応する前記第2の部分の割合が前記ストライプの幅方向において中央側から両端側にかけて徐々に大きくなる部分を含むこと
を特徴とする請求項2に記載の半導体レーザ光源。
Priority Applications (5)
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US15/028,488 US9667029B2 (en) | 2013-11-01 | 2014-06-25 | Semiconductor laser light source |
EP14859126.6A EP3065236B1 (en) | 2013-11-01 | 2014-06-25 | Semiconductor laser beam source |
CA2928970A CA2928970C (en) | 2013-11-01 | 2014-06-25 | Semiconductor laser light source |
CN201480058124.3A CN105659448B (zh) | 2013-11-01 | 2014-06-25 | 半导体激光光源 |
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Cited By (6)
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JP2018163926A (ja) * | 2017-03-24 | 2018-10-18 | 日本オクラロ株式会社 | 光送信モジュール、光モジュール、及び光伝送装置、並びにそれらの製造方法 |
WO2019163276A1 (ja) * | 2018-02-26 | 2019-08-29 | パナソニック株式会社 | 半導体発光装置 |
JP2019216191A (ja) * | 2018-06-13 | 2019-12-19 | 日亜化学工業株式会社 | 光源装置 |
WO2020144794A1 (ja) * | 2019-01-10 | 2020-07-16 | 三菱電機株式会社 | 半導体レーザ装置 |
JPWO2020225952A1 (ja) * | 2019-05-09 | 2020-11-12 | ||
JP2022089985A (ja) * | 2019-01-10 | 2022-06-16 | 三菱電機株式会社 | 半導体レーザ装置 |
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GB2567880B (en) * | 2017-10-30 | 2022-11-30 | Bae Systems Plc | Laser diode array |
US11962122B2 (en) * | 2018-07-30 | 2024-04-16 | Panasonic Holdings Corporation | Semiconductor light emitting device and external resonance type laser device |
DE102020112806A1 (de) * | 2020-05-12 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserbauelement und verfahren zum betrieb zumindest eines halbleiterlasers |
CN117954957B (zh) * | 2024-03-25 | 2024-07-09 | 度亘核芯光电技术(苏州)有限公司 | 一种散热装置及半导体激光器 |
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- 2014-06-25 CN CN201480058124.3A patent/CN105659448B/zh not_active Expired - Fee Related
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JP7518412B2 (ja) | 2018-06-13 | 2024-07-18 | 日亜化学工業株式会社 | 光源装置 |
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Also Published As
Publication number | Publication date |
---|---|
JP6156510B2 (ja) | 2017-07-05 |
US9667029B2 (en) | 2017-05-30 |
CN105659448B (zh) | 2018-12-28 |
US20160254639A1 (en) | 2016-09-01 |
EP3065236B1 (en) | 2020-09-23 |
EP3065236A4 (en) | 2017-06-28 |
EP3065236A1 (en) | 2016-09-07 |
JPWO2015063973A1 (ja) | 2017-03-09 |
CA2928970C (en) | 2018-08-28 |
CN105659448A (zh) | 2016-06-08 |
CA2928970A1 (en) | 2015-05-07 |
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