WO2015050630A3 - Methods of producing large grain or single crystal films - Google Patents

Methods of producing large grain or single crystal films Download PDF

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Publication number
WO2015050630A3
WO2015050630A3 PCT/US2014/049661 US2014049661W WO2015050630A3 WO 2015050630 A3 WO2015050630 A3 WO 2015050630A3 US 2014049661 W US2014049661 W US 2014049661W WO 2015050630 A3 WO2015050630 A3 WO 2015050630A3
Authority
WO
WIPO (PCT)
Prior art keywords
films
methods
single crystal
large grain
producing large
Prior art date
Application number
PCT/US2014/049661
Other languages
French (fr)
Other versions
WO2015050630A2 (en
Inventor
Ratnakar D. Vispute
Andrew SEISER
Original Assignee
Solar-Tectic Llc
Blue Wave Semiconductors, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solar-Tectic Llc, Blue Wave Semiconductors, Inc. filed Critical Solar-Tectic Llc
Priority to EP14850433.5A priority Critical patent/EP3047054A4/en
Publication of WO2015050630A2 publication Critical patent/WO2015050630A2/en
Publication of WO2015050630A3 publication Critical patent/WO2015050630A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)

Abstract

Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.
PCT/US2014/049661 2013-09-18 2014-08-05 Methods of producing large grain or single crystal films WO2015050630A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP14850433.5A EP3047054A4 (en) 2013-09-18 2014-08-05 Methods of producing large grain or single crystal films

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361879275P 2013-09-18 2013-09-18
US61/879,275 2013-09-18
US14/256,619 2014-04-18
US14/256,619 US9856578B2 (en) 2013-09-18 2014-04-18 Methods of producing large grain or single crystal films

Publications (2)

Publication Number Publication Date
WO2015050630A2 WO2015050630A2 (en) 2015-04-09
WO2015050630A3 true WO2015050630A3 (en) 2015-07-16

Family

ID=51420275

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/049661 WO2015050630A2 (en) 2013-09-18 2014-08-05 Methods of producing large grain or single crystal films

Country Status (3)

Country Link
US (1) US9856578B2 (en)
EP (1) EP3047054A4 (en)
WO (1) WO2015050630A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170271622A1 (en) * 2016-06-03 2017-09-21 Solar-Tectic, Llc High efficiency thin film tandem solar cells and other semiconductor devices
US9997661B2 (en) 2016-07-27 2018-06-12 Solar-Tectic Llc Method of making a copper oxide/silicon thin-film tandem solar cell using copper-inorganic film from a eutectic alloy
CN111218650A (en) * 2020-01-13 2020-06-02 何元金 Semiconductor film preparation device and preparation method
WO2022188937A1 (en) 2021-03-09 2022-09-15 Baldr Light Aps A light emitting device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055319A (en) * 1990-04-02 1991-10-08 The Regents Of The University Of California Controlled high rate deposition of metal oxide films
US20070259173A1 (en) * 2006-05-05 2007-11-08 Sulzer Metco Ag Method for the manufacture of a coating
EP2093306A1 (en) * 2006-10-27 2009-08-26 Ulvac Inc. Plasma display panel manufacturing method and manufacturing device
US20110049715A1 (en) * 2007-12-19 2011-03-03 Carlo Taliani Method for depositing metal oxide films
US20110215719A1 (en) * 2007-09-21 2011-09-08 Hitachi, Ltd. Manufacturing method of plasma display panel, magnesium oxide crystal and plasma display panel

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US465231A (en) * 1891-12-15 Car-coupling
US3639165A (en) * 1968-06-20 1972-02-01 Gen Electric Resistor thin films formed by low-pressure deposition of molybdenum and tungsten
US3710072A (en) * 1971-05-10 1973-01-09 Airco Inc Vapor source assembly
AU610260B2 (en) * 1987-10-16 1991-05-16 Furukawa Electric Co. Ltd., The Oxide superconductor shaped body and method of manufacturing the same
JP2000012218A (en) * 1998-06-23 2000-01-14 Tdk Corp Manufacturing device for organic el element and its manufacture
US6214712B1 (en) * 1999-09-16 2001-04-10 Ut-Battelle, Llc Method of physical vapor deposition of metal oxides on semiconductors
US20060003087A1 (en) * 2003-07-15 2006-01-05 Matsushita Electric Industrial Co., Ltd. Process for producing plasma display panel and apparatus therefor
JP4541832B2 (en) 2004-03-19 2010-09-08 パナソニック株式会社 Plasma display panel
JP4541840B2 (en) 2004-11-08 2010-09-08 パナソニック株式会社 Plasma display panel
JP4399344B2 (en) 2004-11-22 2010-01-13 パナソニック株式会社 Plasma display panel and manufacturing method thereof
US20090096375A1 (en) * 2005-04-08 2009-04-16 Hideki Yamashita Plasma Display Panel and Method for Manufacturing Same
US7608308B2 (en) * 2006-04-17 2009-10-27 Imra America, Inc. P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
US7781067B2 (en) 2006-10-17 2010-08-24 Los Alamos National Security, Llc Aligned crystalline semiconducting film on a glass substrate and method of making
CN101210313A (en) * 2006-12-29 2008-07-02 中国科学院长春光学精密机械与物理研究所 Method for growing MgxZn1-xO film by electron-beam evaporation
JP2009129617A (en) 2007-11-21 2009-06-11 Panasonic Corp Plasma display panel
KR101025932B1 (en) * 2008-10-06 2011-03-30 김용환 Method for fabricating transparent conductive oxide electrode using electron beam post treatment
KR102108248B1 (en) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055319A (en) * 1990-04-02 1991-10-08 The Regents Of The University Of California Controlled high rate deposition of metal oxide films
US20070259173A1 (en) * 2006-05-05 2007-11-08 Sulzer Metco Ag Method for the manufacture of a coating
EP2093306A1 (en) * 2006-10-27 2009-08-26 Ulvac Inc. Plasma display panel manufacturing method and manufacturing device
US20110215719A1 (en) * 2007-09-21 2011-09-08 Hitachi, Ltd. Manufacturing method of plasma display panel, magnesium oxide crystal and plasma display panel
US20110049715A1 (en) * 2007-12-19 2011-03-03 Carlo Taliani Method for depositing metal oxide films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3047054A4 *

Also Published As

Publication number Publication date
US9856578B2 (en) 2018-01-02
US20140245947A1 (en) 2014-09-04
EP3047054A4 (en) 2017-05-17
WO2015050630A2 (en) 2015-04-09
EP3047054A2 (en) 2016-07-27

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