WO2015050630A3 - Methods of producing large grain or single crystal films - Google Patents
Methods of producing large grain or single crystal films Download PDFInfo
- Publication number
- WO2015050630A3 WO2015050630A3 PCT/US2014/049661 US2014049661W WO2015050630A3 WO 2015050630 A3 WO2015050630 A3 WO 2015050630A3 US 2014049661 W US2014049661 W US 2014049661W WO 2015050630 A3 WO2015050630 A3 WO 2015050630A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- films
- methods
- single crystal
- large grain
- producing large
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laminated Bodies (AREA)
Abstract
Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14850433.5A EP3047054A4 (en) | 2013-09-18 | 2014-08-05 | Methods of producing large grain or single crystal films |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361879275P | 2013-09-18 | 2013-09-18 | |
US61/879,275 | 2013-09-18 | ||
US14/256,619 | 2014-04-18 | ||
US14/256,619 US9856578B2 (en) | 2013-09-18 | 2014-04-18 | Methods of producing large grain or single crystal films |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2015050630A2 WO2015050630A2 (en) | 2015-04-09 |
WO2015050630A3 true WO2015050630A3 (en) | 2015-07-16 |
Family
ID=51420275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2014/049661 WO2015050630A2 (en) | 2013-09-18 | 2014-08-05 | Methods of producing large grain or single crystal films |
Country Status (3)
Country | Link |
---|---|
US (1) | US9856578B2 (en) |
EP (1) | EP3047054A4 (en) |
WO (1) | WO2015050630A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170271622A1 (en) * | 2016-06-03 | 2017-09-21 | Solar-Tectic, Llc | High efficiency thin film tandem solar cells and other semiconductor devices |
US9997661B2 (en) | 2016-07-27 | 2018-06-12 | Solar-Tectic Llc | Method of making a copper oxide/silicon thin-film tandem solar cell using copper-inorganic film from a eutectic alloy |
CN111218650A (en) * | 2020-01-13 | 2020-06-02 | 何元金 | Semiconductor film preparation device and preparation method |
WO2022188937A1 (en) | 2021-03-09 | 2022-09-15 | Baldr Light Aps | A light emitting device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055319A (en) * | 1990-04-02 | 1991-10-08 | The Regents Of The University Of California | Controlled high rate deposition of metal oxide films |
US20070259173A1 (en) * | 2006-05-05 | 2007-11-08 | Sulzer Metco Ag | Method for the manufacture of a coating |
EP2093306A1 (en) * | 2006-10-27 | 2009-08-26 | Ulvac Inc. | Plasma display panel manufacturing method and manufacturing device |
US20110049715A1 (en) * | 2007-12-19 | 2011-03-03 | Carlo Taliani | Method for depositing metal oxide films |
US20110215719A1 (en) * | 2007-09-21 | 2011-09-08 | Hitachi, Ltd. | Manufacturing method of plasma display panel, magnesium oxide crystal and plasma display panel |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US465231A (en) * | 1891-12-15 | Car-coupling | ||
US3639165A (en) * | 1968-06-20 | 1972-02-01 | Gen Electric | Resistor thin films formed by low-pressure deposition of molybdenum and tungsten |
US3710072A (en) * | 1971-05-10 | 1973-01-09 | Airco Inc | Vapor source assembly |
AU610260B2 (en) * | 1987-10-16 | 1991-05-16 | Furukawa Electric Co. Ltd., The | Oxide superconductor shaped body and method of manufacturing the same |
JP2000012218A (en) * | 1998-06-23 | 2000-01-14 | Tdk Corp | Manufacturing device for organic el element and its manufacture |
US6214712B1 (en) * | 1999-09-16 | 2001-04-10 | Ut-Battelle, Llc | Method of physical vapor deposition of metal oxides on semiconductors |
US20060003087A1 (en) * | 2003-07-15 | 2006-01-05 | Matsushita Electric Industrial Co., Ltd. | Process for producing plasma display panel and apparatus therefor |
JP4541832B2 (en) | 2004-03-19 | 2010-09-08 | パナソニック株式会社 | Plasma display panel |
JP4541840B2 (en) | 2004-11-08 | 2010-09-08 | パナソニック株式会社 | Plasma display panel |
JP4399344B2 (en) | 2004-11-22 | 2010-01-13 | パナソニック株式会社 | Plasma display panel and manufacturing method thereof |
US20090096375A1 (en) * | 2005-04-08 | 2009-04-16 | Hideki Yamashita | Plasma Display Panel and Method for Manufacturing Same |
US7608308B2 (en) * | 2006-04-17 | 2009-10-27 | Imra America, Inc. | P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates |
US7781067B2 (en) | 2006-10-17 | 2010-08-24 | Los Alamos National Security, Llc | Aligned crystalline semiconducting film on a glass substrate and method of making |
CN101210313A (en) * | 2006-12-29 | 2008-07-02 | 中国科学院长春光学精密机械与物理研究所 | Method for growing MgxZn1-xO film by electron-beam evaporation |
JP2009129617A (en) | 2007-11-21 | 2009-06-11 | Panasonic Corp | Plasma display panel |
KR101025932B1 (en) * | 2008-10-06 | 2011-03-30 | 김용환 | Method for fabricating transparent conductive oxide electrode using electron beam post treatment |
KR102108248B1 (en) | 2012-03-14 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Oxide semiconductor film, transistor, and semiconductor device |
US8872174B2 (en) | 2012-06-01 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
-
2014
- 2014-04-18 US US14/256,619 patent/US9856578B2/en active Active
- 2014-08-05 WO PCT/US2014/049661 patent/WO2015050630A2/en active Application Filing
- 2014-08-05 EP EP14850433.5A patent/EP3047054A4/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055319A (en) * | 1990-04-02 | 1991-10-08 | The Regents Of The University Of California | Controlled high rate deposition of metal oxide films |
US20070259173A1 (en) * | 2006-05-05 | 2007-11-08 | Sulzer Metco Ag | Method for the manufacture of a coating |
EP2093306A1 (en) * | 2006-10-27 | 2009-08-26 | Ulvac Inc. | Plasma display panel manufacturing method and manufacturing device |
US20110215719A1 (en) * | 2007-09-21 | 2011-09-08 | Hitachi, Ltd. | Manufacturing method of plasma display panel, magnesium oxide crystal and plasma display panel |
US20110049715A1 (en) * | 2007-12-19 | 2011-03-03 | Carlo Taliani | Method for depositing metal oxide films |
Non-Patent Citations (1)
Title |
---|
See also references of EP3047054A4 * |
Also Published As
Publication number | Publication date |
---|---|
US9856578B2 (en) | 2018-01-02 |
US20140245947A1 (en) | 2014-09-04 |
EP3047054A4 (en) | 2017-05-17 |
WO2015050630A2 (en) | 2015-04-09 |
EP3047054A2 (en) | 2016-07-27 |
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