WO2015030699A3 - Air cavity packages having conductive base plates - Google Patents

Air cavity packages having conductive base plates Download PDF

Info

Publication number
WO2015030699A3
WO2015030699A3 PCT/US2013/048462 US2013048462W WO2015030699A3 WO 2015030699 A3 WO2015030699 A3 WO 2015030699A3 US 2013048462 W US2013048462 W US 2013048462W WO 2015030699 A3 WO2015030699 A3 WO 2015030699A3
Authority
WO
WIPO (PCT)
Prior art keywords
base plate
composite
air cavity
core
base plates
Prior art date
Application number
PCT/US2013/048462
Other languages
French (fr)
Other versions
WO2015030699A2 (en
Inventor
George Michael Wityak
Richard Koba
Original Assignee
Materion Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materion Corporation filed Critical Materion Corporation
Priority to PCT/US2013/048462 priority Critical patent/WO2015030699A2/en
Publication of WO2015030699A2 publication Critical patent/WO2015030699A2/en
Publication of WO2015030699A3 publication Critical patent/WO2015030699A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A high thermal conductivity base plate is provided for use in air cavity packages. The base plate is at least partially comprised of reinforced silver composite. The composite can include a matrix of pure silver or a silver alloy and reinforcement particles. The reinforcement particles can include high thermal conductivity, low CTE particles selected from the group consisting of diamond, cubic boron nitride (c-BN), silicon carbide (SiC), and any combinations thereof. In some embodiments, the base plate is entirely comprised of the composite. In other embodiments, the base plate has a core made of the composite. The core can include at least one outer layer on the core. The semiconductor package can include one or more dice or transistors on the base plate, an insulated frame on the base plate, and one or more leads on the insulated frame.
PCT/US2013/048462 2013-06-28 2013-06-28 Air cavity packages having high thermal conductivity base plates and methods of making WO2015030699A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2013/048462 WO2015030699A2 (en) 2013-06-28 2013-06-28 Air cavity packages having high thermal conductivity base plates and methods of making

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2013/048462 WO2015030699A2 (en) 2013-06-28 2013-06-28 Air cavity packages having high thermal conductivity base plates and methods of making

Publications (2)

Publication Number Publication Date
WO2015030699A2 WO2015030699A2 (en) 2015-03-05
WO2015030699A3 true WO2015030699A3 (en) 2015-08-20

Family

ID=52587460

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/048462 WO2015030699A2 (en) 2013-06-28 2013-06-28 Air cavity packages having high thermal conductivity base plates and methods of making

Country Status (1)

Country Link
WO (1) WO2015030699A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010038140A1 (en) * 2000-04-06 2001-11-08 Karker Jeffrey A. High rigidity, multi-layered semiconductor package and method of making the same
US20040119161A1 (en) * 2002-12-18 2004-06-24 Sumitomo Electric Industries, Ltd. Package for housing semiconductor chip, fabrication method thereof and semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010038140A1 (en) * 2000-04-06 2001-11-08 Karker Jeffrey A. High rigidity, multi-layered semiconductor package and method of making the same
US20040119161A1 (en) * 2002-12-18 2004-06-24 Sumitomo Electric Industries, Ltd. Package for housing semiconductor chip, fabrication method thereof and semiconductor device

Also Published As

Publication number Publication date
WO2015030699A2 (en) 2015-03-05

Similar Documents

Publication Publication Date Title
WO2013003695A3 (en) Bumpless build-up layer package warpage reduction
JP2019523994A5 (en)
TW200715521A (en) Semiconductor stacked die/wafer configuration and packaging and method thereof
TW200802758A (en) Semiconductor packages, methods of forming semiconductor packages, and methods of cooling semiconductor dies
TW201115796A (en) LED chip bonding body, LED package and method for manufacturing a LED package
WO2015027080A3 (en) Selective deposition of diamond in thermal vias
EP2733734A3 (en) Multiple bonding layers for thin-wafer handling
JP2013511836A5 (en)
TW200735348A (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
TW200731482A (en) Semiconductor package structure, stiffener and method of making same
JP2011086700A5 (en)
TW200613435A (en) Epoxy resin composition and semiconductor device
MY191753A (en) Polishing pad with foundation layer and window attached thereto
SG151203A1 (en) Integrated circuit package system with warp-free chip
WO2015018397A3 (en) Metal-ceramic substrate and method for producing a metal-ceramic substrate
JP2011507276A5 (en)
JP2014158025A5 (en)
SG142326A1 (en) Integrated circuit package system with heat slug
US20110070459A1 (en) Thermal Management System
MX2015007055A (en) Seed layer for solar cell conductive contact.
WO2016044179A3 (en) Electronic structures strengthened by porous and non-porous layers, and methods of fabrication
CN104272432A (en) Heat dissipation substrate and method for producing same
WO2009149275A3 (en) Improved multilayer electrostatic chuck wafer platen
WO2015030699A3 (en) Air cavity packages having conductive base plates
CN204968318U (en) High performance temperature drop heat recombination membrane that looses

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13892675

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 13892675

Country of ref document: EP

Kind code of ref document: A2