WO2014183432A1 - 一种集成散热晶闸管 - Google Patents

一种集成散热晶闸管 Download PDF

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Publication number
WO2014183432A1
WO2014183432A1 PCT/CN2013/089432 CN2013089432W WO2014183432A1 WO 2014183432 A1 WO2014183432 A1 WO 2014183432A1 CN 2013089432 W CN2013089432 W CN 2013089432W WO 2014183432 A1 WO2014183432 A1 WO 2014183432A1
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Prior art keywords
thyristor
integrated heat
heat dissipation
water channel
base
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PCT/CN2013/089432
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English (en)
French (fr)
Inventor
曹均正
高冲
杨俊�
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State Grid Smart Grid Research Institute of SGCC
State Grid Corp of China SGCC
C Epri Electric Power Engineering Co Ltd
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State Grid Smart Grid Research Institute of SGCC
State Grid Corp of China SGCC
C Epri Electric Power Engineering Co Ltd
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Publication of WO2014183432A1 publication Critical patent/WO2014183432A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling

Definitions

  • the invention relates to a thyristor, in particular to a novel microchannel integrated heat dissipation thyristor.
  • thyristor devices are widely used in the field of high voltage direct current (HVDC) and are key components of HVDC converter valves.
  • HVDC high voltage direct current
  • the power thyristor has reached a size of 6 inches, and the capacity is 8. 5kV/5000A.
  • the large-capacity power conversion greatly increases the loss of the thyristor itself and causes the junction temperature of the thyristor chip to rise, which affects the operation performance and service life of the thyristor.
  • the heat sink for the thyristor is the heat sink.
  • the main heat sink heat sinks mainly include air cooling, heat pipe cooling, and water cooling.
  • the air cooling method is less efficient, and more is applied to the field with lower commutation power; the heat pipe cooling efficiency is higher but a larger volume of heat sink is required, which is not conducive to the structural design of the converter valve and the static reactive power compensation ( SVC) is widely used in converters with less loss.
  • SVC static reactive power compensation
  • water-cooling and heat-dissipation methods are commonly used for various factors such as heat dissipation efficiency, structural design, and electrical insulation performance.
  • the thyristor and the heat sink are firmly connected by a press-fit structure, and the circulating cooling water inside the radiator carries away the heat generated by the thyristor.
  • the method of increasing the thyristor size to increase its flow capacity and control the junction temperature is very limited, mainly relying on the improvement of heat dissipation efficiency. Summary of the invention:
  • the object of the present invention is to provide a novel integrated heat dissipation thyristor, which can greatly improve the heat dissipation efficiency, reduce the temperature rise, improve the transmission capacity, operation reliability and extend the service life of the DC transmission converter valve.
  • An integrated heat dissipation thyristor the thyristor includes a tube seat and a tube cover, and a chip with a protective layer is disposed therebetween, and one end of the tube seat and the protective layer is along the axial direction A circulation flow path is provided, and the other end of the pipe base is connected to the radiator.
  • the invention provides an integrated heat dissipation thyristor, the heat sink is coaxial with the thyristor, and comprises a casing and a circulating cooling water channel disposed inside the casing along the axial direction of the casing, the cooling water channel end and end respectively For the water inlet and outlet.
  • the invention provides an integrated heat dissipating intergranular tube, which is respectively perpendicular to the first end of the cooling water channel
  • Two pipes in the axial direction, the pipes are connected to the first and last ends of the flow passages in the pipe socket through the contact faces of the pipe socket and the heat sink, respectively.
  • Another preferred integrated heat dissipation thyristor according to the present invention is provided with protrusions along the axial direction of the cooling water channel, and the protrusions are rectangular, zigzag or polygonal.
  • Still another preferred integrated heat dissipating inter-well tube provided by the present invention is provided with protrusions in the axial direction of the flow path, the protrusions being rectangular, zigzag or polygonal.
  • the housing includes a main body and an upper cover, and a sealing groove is disposed at an edge of the upper cover, and the sealing groove is filled with a sealant,
  • the cover is coupled to the body through a sealing groove.
  • the chip comprises an anode side molybdenum sheet, a silicon wafer and a cathode side molybdenum sheet which are sequentially disposed;
  • the silicon wafer comprises a phosphorus diffusion zone N+ and a short set in sequence.
  • Another preferred integrated heat dissipating inter-well tube provided by the present invention is connected to the stem by external pressure.
  • the outer edge of the chip is covered with a rubber sleeve. Due to the adoption of the above technical solutions, the beneficial effects obtained by the present invention are:
  • the heat dissipation efficiency can be greatly improved, the temperature rise can be reduced, the transmission capacity of the DC transmission converter valve, the operation reliability, and the service life can be prolonged;
  • the coolant can be further brought closer to the chip located at the center of the thyristor, which can effectively reduce the thermal resistance between the shells and lower the junction temperature;
  • the thyristor tube holder and the heat sink are coupled to form a power device module, which reduces the thermal resistance of the thyristor shell and can effectively reduce the junction temperature;
  • the thyristor isolation wall of the invention is provided with radial holes, which accelerates the formation speed of the separation wall;
  • microchannel heat sink and thyristor of the present invention respectively reduce the thermal resistance by 11.5%-46%;
  • the microchannels are disposed in the flow path of the heat sink and the thyristor, and the heat dissipation rate has a great relationship with the shape, size, length and number of the protrusions; 8.
  • the thyristor of the present invention enhances seismic performance.
  • FIG. 1 is a schematic structural view of an integrated heat dissipation thyristor
  • FIG. 2 is a schematic structural view of a heat sink and a flow path thereof according to the present invention.
  • Figure 3 is a schematic view of a thyristor flow path
  • Figure 4 is a schematic view of a thyristor
  • Figure 5 is a schematic cross-sectional view of the thyristor and the radiator flow path
  • the integrated heat dissipation thyristor of the present embodiment wherein the thyristor 1 includes a tube holder 5, a porcelain ring shell, a protective layer, a chip and a tube cover which are sequentially disposed in the axial direction; a rubber sleeve; the protective layer and the chip are sequentially buckled into the porcelain ring shell; the end of the tube seat 5 connected to the protective layer is slotted in the axial direction to excavate a circulating flow channel 8 along the axis of the flow channel 8
  • the direction is provided on its inner wall with protrusions 6, which are rectangular, zigzag or polygonal.
  • the other end of the socket 5 is connected to the radiator 2, and the radiator 2 includes a casing and a cooling water channel 9 disposed inside the main body along the axial direction of the casing, and the cooling water channel is provided with a water inlet 3 and a water outlet.
  • the housing includes a main body and an upper cover, and a sealing groove is disposed at an edge of the upper cover, the sealing groove is filled with a sealant, and the upper cover is connected to the main body through a sealing groove.
  • Two pipes 7 perpendicular to the axial direction of the cooling water channel 9 are provided at the first end of the cooling water channel 9, and the pipe 7 passes through the contact surface of the pipe base 5 and the radiator 2, respectively, and the end and end of the flow passage 8 in the pipe base 5, respectively.
  • the connection makes the thyristor 1 and the radiator 2 have a pair of inlet and outlet water ends, and the two pairs of inlet and outlet ends are matched with each other. After the radiator 1 and the thyristor 2 are press-fitted, the two pairs of inlet and outlet are seamlessly connected to form a communication passage.
  • the flow path of the inter-well tube 1 and the heat sink 2 may be various shapes such as a mosquito-repellent type or a mesh type.
  • the cooling water channel is provided with protrusions 6 on its inner wall in the axial direction, and the protrusions 6 are rectangular, zigzag or polygonal.
  • the chip comprises an anode side molybdenum sheet arranged in an axial direction, a silicon wafer and a cathode side molybdenum sheet; the silicon wafer comprises a phosphorus-promoting region N+, a short base region P1, a long base region N, and a short base region which are arranged in the axial direction.
  • a cathode and a gate are disposed on the phosphorous-enhanced region N+, an anode is disposed on the concentrated boron diffusion region P+, a partition wall is disposed around the silicon wafer, and an axial hole is disposed on the surface of the partition wall;
  • the cathode and the gate are respectively provided with lead wires, and the gate leads pass through the radial holes of the edge of the thyristor socket 5 in the radial direction of the silicon wafer.
  • the thyristor 1 is placed in a cold press welding machine, and the gas in the thyristor 1 is evacuated, and then a mixed gas of helium gas and nitrogen gas is injected to prevent oxidation of the metal in the tube.
  • the upper cover of the heat sink 1 is connected to the socket 5, and the thyristor 1 and the heat sink 2 are connected together by external pressure to form an integrated heat dissipation thyristor.
  • the coolant can be further brought closer to the chip located at the center of the thyristor 1, which can effectively reduce the thermal resistance between the crusts and lower the junction temperature.
  • the microchannel heat dissipation technology is introduced, and the surface of the runner 2 and the runner surface of the thyristor 1 are specially shaped to form a microchannel, so that the flow channel cavity forms a certain surface feature, and the coolant is increased. Contact area, improve convective heat transfer efficiency.
  • the reduction rate of the thermal resistance of the microchannel heat sink and the thyristor of the present invention is as follows:

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

一种集成散热晶闸管（1），包括管座（5）和管盖、其间设有具有保护层的芯片，管座与保护层连接的一端沿轴线方向设有循环流道（8），管座的另一端与散热器（2）连接。散热器内部设有的冷却水道（9）通过其首尾端垂直设置的管道（7）与管座内的循环流道首尾端连接，使得散热器和晶闸管之间形成联通的水道，同时将微槽道设置在水道中，从而能够提高晶闸管的散热效率，减小温度升高，提高直流输电换流阀输送容量、运行可靠性，延长使用寿命。

Description

一种集成散热晶闸管
技术领域：
本发明涉及晶闸管， 具体讲涉一种新型的微槽道集成散热晶闸管。 背景技术：
在电力领域中， 晶闸管器件大量应用于高压直流输电 (HVDC)领域， 是 HVDC 换流阀的关键元器件。 目前功率晶闸管已经达到 6英寸尺寸， 容量 8. 5kV/5000A 规格，大容量的功率变换使得晶闸管本身产生的损耗大增并引起晶闸管芯片结温 升高，影响晶闸管的运行性能及使用寿命，因此需要专门对晶闸管进行散热设计， 使其温升控制在较为理想的水平。 为晶闸管提供散热服务的是散热器， 目前主要的散热器散热方式主要有空气 冷却、 热管冷却、 水冷散热等。 其中空气冷却方式效率较低， 较多的应用于换流 功率较低的领域； 热管冷却效率较高但是需要较大体积的散热片， 不利于换流阀 的结构设计、 在静止无功补偿 （SVC ) 等损耗不太大的换流器中应用较多； 在高 压直流输电领域， 综合散热效率、 结构设计、 电气绝缘性能等多方面因素， 普遍 采用水冷散热方式。在直流换流阀内部， 晶闸管与散热器通过压装结构设计牢固 联接， 散热器内部通入循环的冷却水将晶闸管产生的热量带走。 目前， 受结构设 计、成本限制， 通过增大晶闸管尺寸来提高其通流能力、控制结温的方法应用空 间十分有限， 主要依赖于散热效率的提升。 发明内容：
本发明的目的是提供一种新型集成散热晶闸管， 能够大幅度提高散热效率、 减小温升， 提高直流输电换流阀输送容量、 运行可靠性， 延长使用寿命。
为实现上述目的， 本发明采用以下技术方案： 一种集成散热晶闸管， 所述晶 闸管包括管座和管盖、其间设有具有保护层的芯片， 所述管座与保护层连接的一 端沿轴线方向设有循环流道， 所述管座的另一端与散热器连接。
本发明提供的一种集成散热晶闸管，所述散热器与所述晶闸管同轴， 其包括 壳体和沿所述壳体轴线方向设置在壳体内部的循环冷却水道，所述冷却水道首尾 端分别为入水口和出水口。
本发明提供的一种集成散热晶间管，在所述冷却水道首尾端分别设有垂直于 其轴线方向的两个管道，所述管道通过管座与散热器的接触面分别与管座内流道 的首尾端连接。
本发明提供的另一优选的一种集成散热晶闸管，沿所述冷却水道的轴线方向 上设有突起， 所述突起为矩形、 锯齿形或多边形。
本发明提供的再一优选的一种集成散热晶间管，沿所述流道的轴线方向上设 有突起， 所述突起为矩形、 锯齿形或多边形。
本发明提供的又一优选的一种集成散热晶间管， 所述壳体包括主体和上盖， 在所述上盖边缘设有密封槽，所述密封槽内填有密封胶， 所述上盖通过密封槽与 所述主体连接。
本发明提供的又一优选的一种集成散热晶间管，所述芯片包括依次设置的阳 极侧钼片、硅片和阴极侧钼片； 所述硅片包括依次设置的扩磷区 N+、短基区 Pl、 长基区 N、 短基区 P2和浓硼扩散区 P+; 所述扩磷区 N+上设有阴极和门极， 所述 浓硼扩散区 P+上设有阳极； 所述硅片设有隔离墙， 所述隔离墙表面设有孔； 所 述阳极、 阴极和门极分别设有径向引出线。
本发明提供的又一优选的一种集成散热晶间管，所述散热器上盖通过外压力 与所述管座相连。
本发明提供的又一优选的一种集成散热晶间管， 所述芯片外沿包有橡胶套。 由于采用了上述技术方案， 本发明得到的有益效果是：
1、 本发明中能够大幅度提高散热效率、 减小温升， 提高直流输电换流阀输 送容量、 运行可靠性， 延长使用寿命；
2、 本发明中晶闸管管座内部加设流道后， 冷却液能够进一步靠近位于晶闸 管中心的芯片， 能够有效减少结壳之间的热阻， 降低结温；
3、 本发明中晶闸管管座与散热器耦合形成功率器件模块， 降低了晶闸管结 壳热阻， 能有效降低结温；
5、 本发明晶闸管隔离墙设有径向孔， 加快了隔离墙扩散形成速度；
6、 本发明的设有微槽道散热器和晶闸管分别使得热阻降低了 11. 5%-46%；
7、 本发明中将微槽道设置在散热器和晶闸管的流道内， 其散热率与突起的 形状、 大小、 长度和数量有着很大的关系； 8、 本发明的晶闸管加强了抗震性能。 附图说明
图 1为一种集成散热晶闸管结构示意图；
图 2为本发明的散热器及其流道结构示意图；
图 3为一种晶闸管流道示意图；
图 4为一种晶闸管示意图；
图 5为晶闸管及散热器流道截面示意图；
其中， 1-晶闸管， 2-散热器， 3-入水口， 4-出水口， 5-管座， 6-突起, 7-管道, 8- 流道, 9-冷却水道。
具体实施方式 下面结合实施例对发明作进一步的详细说明。 实施例 1 :
如图 1-5所示， 本例的集成散热晶闸管， 其中所述晶闸管 1包括沿轴向依次 设置的管座 5、 瓷环壳、 保护层、 芯片和管盖； 所述芯片外沿包有橡胶套； 所述 保护层和芯片依次扣入瓷环壳内；所述管座 5与保护层连接的一端内沿轴线方向 开槽挖出一条循环流道 8， 并沿所述流道 8轴线方向在其内壁上设有突起 6， 所 述突起 6为矩形、锯齿形或多边形。所述管座 5另一端与散热器 2连接， 所述散 热器 2包括壳体和沿所述壳体轴线方向设置在主体内部的冷却水道 9， 所述冷却 水道设有入水口 3和出水口 4。 所述壳体包括主体和上盖， 在所述上盖边缘设有 密封槽， 所述密封槽内填有密封胶， 所述上盖通过密封槽与所述主体连接。在所 述冷却水道 9首尾端设有垂直于冷却水道 9轴线方向的两个管道 7， 所述管道 7 通过管座 5与散热器 2的接触面分别与管座 5内流道 8的首尾端连接，使得晶闸 管 1与散热器 2上各有一对进出水端， 两对进出水端彼此相匹配， 散热器 1与晶 闸管 2经过压装后两对进出口无缝衔接形成一个联通的流道，晶间管 1和散热器 2的流道可以是蚊香型或者网格型等多种形状。所述冷却水道沿轴线方向在其内 壁上设有突起 6， 所述突起 6为矩形、 锯齿形或多边形。
所述芯片包括依次轴向设置的阳极侧钼片，硅片和阴极侧钼片； 所述硅片包 括依次轴向设置的扩磷区 N+、短基区 Pl、长基区 N、短基区 P2和浓硼扩散区 P+; 所述扩磷区 N+上设有阴极和门极， 所述浓硼扩散区 P+上设有阳极； 所述硅片四 周设有隔离墙， 所述隔离墙表面设有轴向孔； 所述阳极、 阴极和门极分别设有引 出线，所述门极引线沿硅片径向方向通过晶闸管管座 5边缘径向孔穿出。将所述 晶闸管 1放入冷压焊接机， 同时将晶闸管 1内气体抽真空， 再冲入氦气和氮气的 混合气体， 防止管内金属氧化。所述散热器 1上盖与管座 5相连， 晶闸管 1与所 述散热器 2通过外压力连接在一起形成集成散热晶闸管。
由于晶闸管 1管座 5内部加设流道 8后，冷却液能够进一步靠近位于晶闸管 1中心的芯片， 能够有效减少结壳之间的热阻， 降低结温。 为了进一步增强散热 效果， 引入微槽道散热技术， 将散热器 2和晶闸管 1的流道表面特制出一定形状 的微槽道， 使得流道腔体形成一定的表面特征， 增大与冷却液的接触面积， 提高 对流换热效率。
本发明的设有微槽道散热器和晶闸管热阻降低率见下表:
Figure imgf000006_0001
由此可见，该设有微槽道散热器和晶间管 1与未设有微槽道的相比可以大大 提高了散热效率。 最后应该说明的是:以上实施例仅用以说明本发明的技术方案而非对其限 制，尽管参照上述实施例对本发明进行了详细说明， 所属领域的普通技术人员应 当理解： 依然可以对本发明的具体实施方式进行修改或者等同替换， 而未脱离本 发明精神和范围的任何修改或者等同替换， 其均应涵盖在本权利要求范围当中。

Claims

权 利 要 求
1、 一种集成散热晶闸管， 所述晶闸管包括管座和管盖、 其间设有具有保护层的 芯片， 其特征在于： 所述管座与保护层连接的一端沿轴线方向设有循环流道， 所 述管座的另一端与散热器连接。
2、 如权利要求 1所述的一种集成散热晶闸管， 其特征在于： 所述散热器与所述 晶闸管同轴， 其包括壳体和沿所述壳体轴线方向设置在壳体内部的循环冷却水 道， 所述冷却水道首尾端分别为入水口和出水口。
3、 如权利要求 2所述的一种集成散热晶闸管， 其特征在于： 在所述冷却水道首 尾端分别设有垂直于其轴线方向的两个管道，所述管道通过管座与散热器的接触 面分别与管座内流道的首尾端连接。
4、 如权利要求 2或 3所述的一种集成散热晶闸管， 其特征在于： 沿所述冷却水 道的轴线方向上设有突起， 所述突起为矩形、 锯齿形或多边形。
5、 如权利要求 1或 3所述的一种集成散热晶闸管， 其特征在于： 沿所述流道的 轴线方向上设有突起， 所述突起为矩形、 锯齿形或多边形。
6、 如权利要求 1所述的一种集成散热晶间管， 其特征在于： 所述壳体包括主体 和上盖， 在所述上盖边缘设有密封槽， 所述密封槽内填有密封胶， 所述上盖通过 密封槽与所述主体连接。
7、 如权利要求 1所述的一种集成散热晶闸管， 其特征在于： 所述芯片包括依次 设置的阳极侧钼片、 硅片和阴极侧钼片； 所述硅片包括依次设置的扩磷区 N+、 短基区 Pl、长基区 N、短基区 P2和浓硼扩散区 P+; 所述扩磷区 N+上设有阴极和 门极， 所述浓硼扩散区 P+上设有阳极； 所述硅片设有隔离墙， 所述隔离墙表面 设有孔； 所述阳极、 阴极和门极分别设有径向引出线。
8、 如权利要求 1所述的一种集成散热晶闸管， 其特征在于： 所述散热器上盖通 过外压力与所述管座相连。
9、 如权利要求 1所述的一种集成散热晶闸管， 其特征在于： 所述芯片外沿包有 橡胶套。
PCT/CN2013/089432 2013-05-17 2013-12-13 一种集成散热晶闸管 Ceased WO2014183432A1 (zh)

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