WO2014064050A1 - Treatment of preforms containing copper with a mixture containing chlorine-free and carboxyl-free acids and oxidants - Google Patents

Treatment of preforms containing copper with a mixture containing chlorine-free and carboxyl-free acids and oxidants Download PDF

Info

Publication number
WO2014064050A1
WO2014064050A1 PCT/EP2013/071966 EP2013071966W WO2014064050A1 WO 2014064050 A1 WO2014064050 A1 WO 2014064050A1 EP 2013071966 W EP2013071966 W EP 2013071966W WO 2014064050 A1 WO2014064050 A1 WO 2014064050A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper
aqueous mixture
weight
chlorine
etching
Prior art date
Application number
PCT/EP2013/071966
Other languages
German (de)
French (fr)
Inventor
Thomas PAASCHE
Henning Urch
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of WO2014064050A1 publication Critical patent/WO2014064050A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/46Regeneration of etching compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10Other heavy metals
    • C23G1/103Other heavy metals copper or alloys of copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/36Regeneration of waste pickling liquors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0789Aqueous acid solution, e.g. for cleaning or etching

Definitions

  • the present invention relates to a process for the treatment of moldings containing copper with a mixture containing chlorine-free acids without carboxyl groups and Oxidati- onsstoff. Furthermore, the invention also relates to mixtures comprising methanesulfonic acid and hydrogen peroxide. Another object of the invention is the use of such mixtures containing chlorine-free acids without carboxyl groups and oxidizing agents, in particular methanesulfonic acid and hydrogen peroxide, for etching or pickling of moldings containing copper.
  • Copper and copper alloys are often used as conductive materials in the semiconductor manufacturing field. Copper tracks are often found to be conductive connecting elements of semiconductor structures, for example in integrated circuits on boards.
  • mixtures containing acids for example hydrochloric acid, acetic acid, sulfuric acid or nitric acid and oxidizing agents such as pereroxides, persulfates, permanganates, Fe (III) solutions, bromine or Cr (VI) compounds are frequently used.
  • acids for example hydrochloric acid, acetic acid, sulfuric acid or nitric acid and oxidizing agents such as pereroxides, persulfates, permanganates, Fe (III) solutions, bromine or Cr (VI) compounds are frequently used.
  • WO 201 1/0171 19 A2 describes wet-chemical etching processes for removing copper in the processing of semiconductors by means of solutions comprising complexing agents and oxidizing agents in a pH range from 5 to 12.
  • US 2005/0056616 A1 and US 2006/0183056 A1 describe methods for etching copper and copper alloys. With the aid of compositions containing weak and strong complexing agents for copper and oxidizing agents, the surfaces of copper or copper alloys are treated at a pH of 6 to 12.
  • US 7,465,408 B1 describes methods of etching copper-containing materials by first contacting the material with a first solution which converts a portion of the material to a passivating layer.
  • This first solution contains a peroxide, a first organic acid, and water at a pH of 2 to 6.
  • the passivating coating is contacted with a second solution to remove the passivating film, this second solution being a second contains organic acid and water.
  • copper is often deposited on an epoxy resin board.
  • a photoresist photoresist
  • a photoresist is applied and selectively exposed at certain points.
  • Unexposed residues of the photoresist are usually removed in further processing steps with alcoholic solutions.
  • aqueous mixtures of CuC, FeC or HCl and hydrogen peroxide are used as etching mixtures for removing or building structures containing copper or for pickling surfaces containing copper.
  • the resulting in these wet chemical etching mixtures contain after removal of the copper in addition to the copper ions a high proportion of chloride ions in the solution and are therefore a simple reprocessing and recovery of copper, for example by electrolysis, because of the formation of chlorine gas, difficult to access.
  • the object of the present invention was therefore to find processes for the treatment of moldings containing copper, which allow a simple reprocessing and recovery of copper after the treatment.
  • a further object of the invention was to provide wet-chemical etching processes which lead to well-defined structures in the removal of copper-containing materials, in particular to structures with smooth surfaces and defined edges.
  • populated boards contain up to 25% by weight of pure copper.
  • the layer thickness of the copper is from 20 to 45 ⁇ thick, which corresponds to about 0.02 wt .-% with an assumed total thickness of a board of 1 mm.
  • the relative content of copper thus generally increases.
  • such molded articles contain from 0.01% by weight to 50% by weight of copper, based on the total amount of molding. Particularly preferably from 0.01 to 25 wt .-%. Further preferably, the copper occurs in the form of metallic copper or copper alloys with other metals, such as molybdenum.
  • the chlorine-free acids without carboxyl groups (a.) are selected from the group of alkylsulfonic acids, tetrafluoroboric acid, sulfuric acid, hexafluorosilicic acid, trifluoroacetic acid, trifluoromethanesulfonic acid. Methanesulfonic acid is particularly preferred as chlorine-free acid without carboxyl groups (a.).
  • the oxidizing agents (b.) are selected from the group of peroxide compounds and perborate compounds, preferably from the group consisting of hydrogen peroxide, sodium perborate, barium perborate, carbamate peroxide and urea peroxide, peroxycarboxylic acids such as peramaic acid or peracetic acid. Very particular preference is given to hydrogen peroxide as oxidizing agent (b.).
  • the component (c.) Contains as an aqueous solvent from 10 to 100 wt .-% water. Preference is given to using water as the aqueous solvent (c.). In addition to water, further polar liquids such as alcohols or ionic liquids may be present in the aqueous solvent.
  • the aqueous mixture (M) may contain as additional component (d.) Additional additives.
  • Preferred additives (d.) are surfactants, complexing agents or corrosion inhibitors.
  • surfactants serve to improve the wetting of the molding or of the copper with the aqueous mixture (M). It is possible to use anionic, cationic, nonionic or amphoteric surfactants.
  • the surfactants may also be polymeric surfactants and preferably have a block structure. Surfactants are known to those skilled in the art and knowledgeable in the art and can be purchased commercially. It is preferred to use anionic or nonionic surfactants. For example, alkyl polyglycosides can be used as surfactants.
  • Complexing agents are often used to complex copper ions and thus to accelerate the dissolution process of the copper.
  • Corresponding complexing agents are known to the skilled person from the prior art and his expertise and can be purchased commercially.
  • ethylenediaminetetraacetic acid (EDTA) methylglycine diacetic acid
  • GLDA glutamic acid diacetic acid
  • NTA nitrilotriacetic acid
  • corrosion inhibitors are used in the treatment of moldings containing copper to prevent or suppress unwanted corrosion effects on materials.
  • Corresponding corrosion inhibitors are known to those skilled in the art and their knowledge and can be purchased commercially.
  • alkyl phosphates, 2-butyne-1,4-diol, propargyl alcohol, ethynylcarbinol alkoxylate, polyethylene lenimin, thiodiglycol ethoxylate can be used as corrosion inhibitors.
  • the aqueous mixture contains (M)
  • the quantities are in each case based on the total amount of components (a.), (b.), (c.) and (d.) and the sum of the amounts of all components (a.), (b.), (c. ) and (d.) is 100% by weight.
  • the mixture (M) in particular before the treatment of the shaped body, particular preference is given to containing no further components apart from the components (a.), (B.), (C.) And optionally (d.).
  • the total amount of all additives (d.) In the aqueous mixture (M) is, as described above, in the range from 0 to 10% by weight, preferably from 0 to 5% by weight, in particular from 0 to 3% by weight. -%.
  • Surfactants are preferably used in an amount of 0.5 to 2 wt .-%.
  • Complexing agents are preferably used in an amount of 0.5 to 5 wt .-%.
  • Corrosion inhibitors are preferably used in an amount of 0.1 to 1 wt .-%.
  • the aqueous mixture (M) has a pH of from -0.5 to 5, preferably from 0 to 5, particularly preferably from 0 to 3, very particularly preferably from 0 to 2, in particular from 0 to 1 ,
  • the pH of the mixture (M) is determined by glass electrode.
  • the copper contained may be distributed arbitrarily in the molding as long as it at least partially in contact with the aqueous mixture (M) or comes into contact or is brought into contact.
  • the copper contained is at least partially on at least one surface of the shaped body.
  • the molded body is a printed circuit board (board) or printed circuit board.
  • copper is usually removed from or from the shaped body, preferably metallic copper in the form of copper ions is separated from or from the shaped body.
  • the aqueous mixture (M) additionally contains dissolved copper, preferably in the form of copper ions, and the aqueous mixture is separated from the solid in a further process step. A so-called waste solution is obtained.
  • Another object of the invention is a process for working up the aqueous mixture (M), which additionally contains (e.) Dissolved copper (waste solution), wherein an electrolysis is carried out on this waste solution to at least partially deposit the dissolved copper as metallic copper.
  • Typical conditions for the electrowinning of copper on stainless steel electrodes are high current densities of 250-1000A / m 2 at 0.3-0.4V.
  • the electrode distance is 5 to 50 mm.
  • MI mixtures
  • a. From 10 to 40 wt .-% of methanesulfonic acid
  • b. From 10 to 20 wt .-%, preferably from 15 to 20
  • These mixtures can also be excellently mixed with further additives (d.)
  • additives rens for the treatment of moldings containing copper.
  • rens for the treatment of moldings containing copper As a rule, from 0 to 10% by weight of additives (d.) Are contained in the mixtures.
  • the quantities given in each case relate to the total amount of components (a.), (B.), (C.) And optional (d.) And the sum of the amounts of all components (a.), (B.), (C) , (d.) is 100% by weight.
  • these mixtures according to the invention can be used for etching or pickling of shaped bodies containing copper, wherein preferably the copper contained is at least partially located on at least one surface of the shaped body.
  • the shaped body is a circuit board.
  • the present invention provides processes for the treatment of moldings containing copper which, after treatment, allow easy reprocessing and recovery of copper. Furthermore, wet-chemical etching processes are provided which lead to well-defined structures, in particular to structures with smooth surfaces and defined edges, when removing copper-containing materials.
  • the aqueous mixture M1 was obtained by mixing the individual components with water.
  • M1 10% by weight of methanesulfonic acid (MSA), 15% by weight of H 2 O 2 , 75% by weight of H 2 O.
  • the determination of the polarization resistance was carried out in a potential range of ⁇ 5 mV against the corrosion potential (Ecorr) using a scan rate of 0.1 mV / s.
  • the measured potential (E) plotted against the current density (j) was fitted to a straight line, from the slope of the line Rp was determined.
  • the Rp value indicates the resistance of a metal to the transfer of electrons to an electroactive species in solution. Higher values of Rp mean higher corrosion resistance to uniform corrosion. Lower values thus correlate with a faster dissolution of the metal. Resolution of copper:
  • E caloric reference electrode saturated with reference cell vs. SCE
  • time or current density show the significantly increased rate of copper dissolution for M1 compared to V1.
  • the value of E for M1 is about +0.22 V while for V1 it is about -0.5 V in a period up to 60 hours.
  • the remainder to 100% by weight is water at L6 to L15.
  • the copper-coated circuit boards were placed at a temperature of 18 ° C in 100 ml of the respective solution.
  • the copper-coated circuit boards were further laid at 100 ° C. of the respective solution at a temperature of 18 ° C. for 12 to 50 minutes.

Abstract

A method for treating preforms containing copper, wherein an aqueous mixture (M), containing (a.) chlorine-free acids without carboxyl groups, (b.) oxidants, (c.) aqueous solvent and optionally further additives is brought into contact with the preform. The method is inter alia characterized in that the aqueous mixture (M) additionally (e.) contains dissolved copper after etching or pickling and is separated from the preform. The invention also relates to a method for processing the separated aqueous mixture (M), which additionally contains dissolved copper, by electrolysis. The invention further relates to mixtures (MI) containing (a.) from 10 to 40% w/w methane sulphonic acid, (b.) from 10 to 20% w/w hydrogen peroxide and (c.) from 40 to 80% w/w water and to the use thereof for etching or pickling preforms containing copper.

Description

BEHANDLUNG VON FORMKÖRPERN ENTHALTEND KUPFER MIT EINER MISCHUNG  TREATMENT OF FORM BODIES CONTAINING COPPER WITH A MIXTURE
ENTHALTEND CHLOR- UND CARBOXL -FREIE SÄUREN UND OXIDATIONSMITTEL  CONTAINING CHLORINE AND CARBOXL-FREE ACIDS AND OXIDIZING AGENTS
Beschreibung description
Die vorliegende Erfindung betrifft ein Verfahren zur Behandlung von Formkörpern enthaltend Kupfer mit einer Mischung enthaltend chlorfreie Säuren ohne Carboxylgruppen und Oxidati- onsmittel. Weiterhin betrifft die Erfindung auch Mischungen enthaltend Methansulfonsäure und Wasserstoffperoxid. Ein weiterer Gegenstand der Erfindung ist die Verwendung solcher Mi- schungen enthaltend chlorfreie Säuren ohne Carboxylgruppen und Oxidationsmittel, insbesondere Methansulfonsäure und Wasserstoffperoxid, zum Ätzen oder Beizen von Formkörpern enthaltend Kupfer. The present invention relates to a process for the treatment of moldings containing copper with a mixture containing chlorine-free acids without carboxyl groups and Oxidati- onsmittel. Furthermore, the invention also relates to mixtures comprising methanesulfonic acid and hydrogen peroxide. Another object of the invention is the use of such mixtures containing chlorine-free acids without carboxyl groups and oxidizing agents, in particular methanesulfonic acid and hydrogen peroxide, for etching or pickling of moldings containing copper.
Weitere Ausführungsformen der vorliegenden Erfindung sind den Ansprüchen, der Beschrei- bung und den Beispielen zu entnehmen. Es versteht sich, dass die vorstehend genannten und die nachstehend noch zu erläuternden Merkmale des erfindungsgemäßen Gegenstandes nicht nur in der jeweils konkret angegebenen Kombination, sondern auch in anderen Kombinationen verwendbar sind, ohne den Rahmen der Erfindung zu verlassen. Bevorzugt bzw. ganz bevorzugt sind die Ausführungsformen der vorliegenden Erfindung in denen alle Merkmale die bevor- zugten bzw. ganz bevorzugten Bedeutungen haben. Further embodiments of the present invention can be taken from the claims, the description and the examples. It is understood that the features mentioned above and those yet to be explained of the subject matter according to the invention can be used not only in the particular concretely specified combination but also in other combinations without departing from the scope of the invention. Preferred or very preferred are the embodiments of the present invention in which all features have the preferred or very preferred meanings.
Kupfer und Kupferlegierungen werden auf dem Gebiet der Halbleiterherstellung häufig als leitfähige Materialien eingesetzt. Kupferbahnen finden sich häufig als leitfähige verbindende Elemente von Halbleiterstrukturen, beispielsweise in integrierten Schaltungen auf Platinen. Copper and copper alloys are often used as conductive materials in the semiconductor manufacturing field. Copper tracks are often found to be conductive connecting elements of semiconductor structures, for example in integrated circuits on boards.
Bei der Herstellung von Halbleiterstrukturen werden in verschiedenen Verfahrensschritten effektive Verfahren, beispielsweise nasschemische Ätztechniken, zur Entfernung von Kupfer oder Kupferlegierungen benötigt. Hierbei treten häufig Probleme auf, da die Entfernung des Kupfers in der Regel ungleichmäßig erfolgt und zur Bildung von Unebenheiten an der Oberfläche oder generell zu Problemen mit anisotroper Entfernung an Korngrenzen führen kann. Beispielsweise ist es schwierig glatte gerade Kanten an isolierten Strukturen durch eine gleichmäßige Entfernung von Kupfer zu erzeugen. Es besteht daher ein Bedarf an nasschemischen Ätzverfahren, die bei der Entfernung von kupferhaltigen Materialien zu wohldefinierten Strukturen, insbesondere zu Strukturen mit glatten Oberflächen und definierten Kanten führen. In the fabrication of semiconductor structures, effective processes, such as wet chemical etching techniques, are required in various process steps to remove copper or copper alloys. This often causes problems, since the removal of the copper is usually uneven and can lead to the formation of surface irregularities or generally problems with anisotropic removal at grain boundaries. For example, it is difficult to create smooth straight edges on isolated structures by uniform removal of copper. There is therefore a need for wet-chemical etching processes which lead to well-defined structures, in particular to structures with smooth surfaces and defined edges, in the removal of copper-containing materials.
Bei der nasschemischen Entfernung von Kupfer durch Ätzen werden häufig Mischungen enthaltend Säuren, beispielsweise Salzsäure, Essigsäure, Schwefelsäure oder Salpetersäure und Oxidationsmittel wie Pereroxide, Persulfate, Permanganate, Fe(lll)-Lösungen, Brom oder Cr(VI)-Verbindungen eingesetzt. In the wet-chemical removal of copper by etching, mixtures containing acids, for example hydrochloric acid, acetic acid, sulfuric acid or nitric acid and oxidizing agents such as pereroxides, persulfates, permanganates, Fe (III) solutions, bromine or Cr (VI) compounds are frequently used.
Die WO 201 1/0171 19 A2 beschreibt nasschemische Ätzverfahren zur Entfernung von Kupfer bei der Verarbeitung von Halbleitern, mit Hilfe von Lösungen enthaltend Komplexbildner und Oxidationsmittel in einem pH-Bereich von 5 bis 12. In der US 2005/0056616 A1 und US 2006/0183056 A1 werden Verfahren zum Ätzen von Kupfer und Kupferlegierungen beschrieben. Mit Hilfe von Zusammensetzungen enthaltend schwache und starke Komplexbildner für Kupfer und Oxidationsmittel werden bei einem pH von 6 bis 12 die Oberflächen von Kupfer oder Kupferlegierungen behandelt. WO 201 1/0171 19 A2 describes wet-chemical etching processes for removing copper in the processing of semiconductors by means of solutions comprising complexing agents and oxidizing agents in a pH range from 5 to 12. US 2005/0056616 A1 and US 2006/0183056 A1 describe methods for etching copper and copper alloys. With the aid of compositions containing weak and strong complexing agents for copper and oxidizing agents, the surfaces of copper or copper alloys are treated at a pH of 6 to 12.
US 7,465,408 B1 beschreibt Verfahren zum Ätzen von kupferhaltigen Materialien, wobei zunächst das Material mit einer ersten Lösung in Kontakt gebracht wird, die einen Teil des Materials zu einer passivierenden Schicht umwandelt. Diese erste Lösung enthält ein Peroxid, eine erste organische Säure und Wasser bei einem pH von 2 bis 6. Im Anschluss wird der passivie- rende Überzug mit einer zweiten Lösung in Kontakt gebracht, um den passivierenden Film zu entfernen, wobei diese zweite Lösung eine zweite organische Säure und Wasser enthält. US 7,465,408 B1 describes methods of etching copper-containing materials by first contacting the material with a first solution which converts a portion of the material to a passivating layer. This first solution contains a peroxide, a first organic acid, and water at a pH of 2 to 6. Subsequently, the passivating coating is contacted with a second solution to remove the passivating film, this second solution being a second contains organic acid and water.
Bei der Herstellung von Leiterplatinen beispielsweise wird Kupfer häufig auf eine Epoxyharz- platte abgeschieden. Auf die Kupferschicht wird ein Photolack (Photoresist) aufgebracht und an bestimmten Stellen gezielt belichtet. Unbelichtete Reste des Photoresists werden in weiteren Verarbeitungsschritten in der Regel mit alkoholischen Lösungen entfernt. Die Kupferschichten, die dabei unter dem unbelichteten Photoresist lagen, müssen nun anschließen ebenfalls häufig nasschemisch weggeätzt werden. Häufig werden bei industriellen Verfahren wässrige Mischungen aus CuC , FeC oder HCl und Wasserstoffperoxid als Ätzmischungen zum Abtragen oder Aufbauen von Strukturen enthaltend Kupfer oder zum Beizen von Oberflächen enthaltend Kupfer eingesetzt. Die bei diesen nasschemischen Ätzverfahren resultierenden Mischungen enthalten nach der Entfernung des Kupfers neben den Kupferionen einen hohen Anteil an Chloridionen in der Lösung und sind daher einer einfachen Wiederaufarbeitung und Rückgewinnung des Kupfers, beispielsweise durch Elektrolyse, wegen der Entstehung von Chlorgas, nur schwer zugänglich. For example, in the manufacture of printed circuit boards, copper is often deposited on an epoxy resin board. On the copper layer, a photoresist (photoresist) is applied and selectively exposed at certain points. Unexposed residues of the photoresist are usually removed in further processing steps with alcoholic solutions. The copper layers, which were under the unexposed photoresist, now also often have to be etched away wet-chemically. Frequently, in industrial processes, aqueous mixtures of CuC, FeC or HCl and hydrogen peroxide are used as etching mixtures for removing or building structures containing copper or for pickling surfaces containing copper. The resulting in these wet chemical etching mixtures contain after removal of the copper in addition to the copper ions a high proportion of chloride ions in the solution and are therefore a simple reprocessing and recovery of copper, for example by electrolysis, because of the formation of chlorine gas, difficult to access.
Aufgabe der vorliegenden Erfindung war es daher, Verfahren zur Behandlung von Formkörpern enthaltend Kupfer zu finden, die nach der Behandlung eine einfache Wiederaufarbeitung und Rückgewinnung von Kupfer ermöglichen. Eine weitere Aufgabe der Erfindung war es nasschemische Ätzverfahren bereitzustellen, die bei der Entfernung von kupferhaltigen Materialien zu wohldefinierten Strukturen, insbesondere zu Strukturen mit glatten Oberflächen und definierten Kanten führen. Gelöst werden diese Aufgaben durch ein Verfahren zur Behandlung, bevorzugt zum Ätzen oder Beizen, von Formkörpern enthaltend Kupfer, wobei eine wässrigen Mischung (M), enthaltend (a.) chlorfreie Säuren ohne Carboxylgruppen, (b.) Oxidationsmittel und (c.) wässriges Lösungsmittel, mit dem Formkörper in Kontakt gebracht wird. Der Gehalt an Kupfer von Formkörpern enthaltend Kupfer kann je nach Verwendung des Formkörpers über einen weiten Bereich variieren. Häufig enthalten beispielsweise bestückte Platinen bis zu 25 Gew.-% Reinkupfer. In anderen Fällen ist die Schichtdicke des Kupfers von 20 bis 45 μηι dick, was bei einer angenommenen Gesamtdicke einer Platine von 1 mm etwa 0,02 Gew.-% entspricht. Bei dünneren Leiterplatten steigt somit der relative Gehalt an Kupfer in der Regel an. The object of the present invention was therefore to find processes for the treatment of moldings containing copper, which allow a simple reprocessing and recovery of copper after the treatment. A further object of the invention was to provide wet-chemical etching processes which lead to well-defined structures in the removal of copper-containing materials, in particular to structures with smooth surfaces and defined edges. These objects are achieved by a method for the treatment, preferably for etching or pickling, of moldings containing copper, wherein an aqueous mixture (M) containing (a) chlorine-free acids without carboxyl groups, (b.) Oxidizing agent and (c.) Aqueous Solvent, is brought into contact with the molding. The content of copper of moldings containing copper can vary over a wide range depending on the use of the molding. Frequently, for example, populated boards contain up to 25% by weight of pure copper. In other cases, the layer thickness of the copper is from 20 to 45 μηι thick, which corresponds to about 0.02 wt .-% with an assumed total thickness of a board of 1 mm. In the case of thinner circuit boards, the relative content of copper thus generally increases.
In der Regel enthalten solche Formkörper von 0,01 Gew.-% bis 50 Gew.-% Kupfer, bezogen auf die Gesamtmenge an Formkörper. Besonders bevorzugt von 0,01 bis 25 Gew.-%. Weiterhin bevorzugt tritt das Kupfer hierbei in Form von metallischem Kupfer oder von Kupferlegierungen mit anderen Metallen, beispielsweise Molybdän auf. As a rule, such molded articles contain from 0.01% by weight to 50% by weight of copper, based on the total amount of molding. Particularly preferably from 0.01 to 25 wt .-%. Further preferably, the copper occurs in the form of metallic copper or copper alloys with other metals, such as molybdenum.
In einer bevorzugten Ausführungsform des erfindungsgemäßen Verfahrens werden die chlor- freien Säuren ohne Carboxylgruppen (a.) gewählt aus der Gruppe der Alkylsulfonsäuren, Tetraf- luoroborsäure, Schwefelsäure, Hexafluorokieselsäure, Trifluoressigsäure, Trifluormethansulfon- säure . Besonders bevorzugt ist Methansulfonsäure als chlorfreie Säure ohne Carboxylgruppen (a.). In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Verfahrens werden die Oxidationsmittel (b.) gewählt aus der Gruppe der Peroxidverbindungen und Perboratverbindun- gen, bevorzugt aus der Gruppe bestehend aus Wasserstoffperoxid, Natriumperborat, Bariumperborat, Carbamat-Peroxid und Harnstoffperoxid, Peroxocarbonsäuren wie Peramaeisensäure oder Peressigsäure. Ganz besonders bevorzugt ist Wasserstoffperoxid als Oxidationsmittel (b.). In a preferred embodiment of the process according to the invention, the chlorine-free acids without carboxyl groups (a.) Are selected from the group of alkylsulfonic acids, tetrafluoroboric acid, sulfuric acid, hexafluorosilicic acid, trifluoroacetic acid, trifluoromethanesulfonic acid. Methanesulfonic acid is particularly preferred as chlorine-free acid without carboxyl groups (a.). In a further preferred embodiment of the process according to the invention, the oxidizing agents (b.) Are selected from the group of peroxide compounds and perborate compounds, preferably from the group consisting of hydrogen peroxide, sodium perborate, barium perborate, carbamate peroxide and urea peroxide, peroxycarboxylic acids such as peramaic acid or peracetic acid. Very particular preference is given to hydrogen peroxide as oxidizing agent (b.).
Die Komponente (c.) enthält als wässriges Lösungmittel von 10 bis 100 Gew.-% Wasser. Bevorzugt wird als wässriges Lösungsmitel (c.) Wasser eingesetzt. Neben Wasser können im wässrigen Lösungsmittel weitere polare Flüssigkeiten wie Alkohole, oder ionische Flüssigkeiten enthalten sein. The component (c.) Contains as an aqueous solvent from 10 to 100 wt .-% water. Preference is given to using water as the aqueous solvent (c.). In addition to water, further polar liquids such as alcohols or ionic liquids may be present in the aqueous solvent.
In einer besonders bevorzugten Ausführungsform des erfindungsgemäßen Verfahrens werden als chlorfreie Säuren ohne Carboxylgruppe (a.) Alkylsulfonsäuren, insbesondere Metansulfon- säure, als Oxidationsmittel (b.) Wasserstoffperoxid und als wässriges Lösungsmittel (c.) Wasser eingesetzt. In a particularly preferred embodiment of the process according to the invention are used as chlorine-free acids without carboxyl group (a.) Alkylsulfonsäuren, especially methanesulfonic acid, as the oxidizing agent (b.) Hydrogen peroxide and as an aqueous solvent (c.) Water.
Die wässrige Mischung (M) kann als weitere Komponente (d.) zusätzliche Additive enthalten. Als bevorzugte Additive (d.) sind hierbei Tenside, Komplexbildner oder Korrosionsinhibitoren zu nennen. Tenside dienen hierbei in der Regel der Verbesserung der Benetzung des Formkörpers bzw. des Kupfers mit der wässrigen Mischung (M). Es können anionische, kationische, nichtionische oder amphotäre Tenside zum Einsatz kommen. Die Tenside können auch polymere Tenside sein und bevorzugt eine Blockstruktur aufweisen. Tenside sind dem Fachmann aus dem Stand der Technik und seinem Fachwissen bekannt und können kommerziell erworben werden. Be- vorzugt werden anionische oder nichtionisch Tenside eingesetzt. Beispielsweise können Alkyl- polyglycoside als Tenside eingesetzt werden. Komplexbildner dienen häufig dazu Kupferionen zu komplexieren und damit den Auflösungsvorgang des Kupfers zu beschleunigen. Entsprechende Komplexbildner sind dem Fachmann aus dem Stand der Technik und seinem Fachwissen bekannt und können kommerziell erworben werden. Beispielsweise lassen sich Ethylendiamintetraessigsäure (EDTA), Methylglycin- diessigsäure, Glutaminsäurediessigsäure (GLDA) oder Nitrilotriessigsäure (NTA) als Komplexbildner einsetzen. The aqueous mixture (M) may contain as additional component (d.) Additional additives. Preferred additives (d.) Here are surfactants, complexing agents or corrosion inhibitors. As a rule, surfactants serve to improve the wetting of the molding or of the copper with the aqueous mixture (M). It is possible to use anionic, cationic, nonionic or amphoteric surfactants. The surfactants may also be polymeric surfactants and preferably have a block structure. Surfactants are known to those skilled in the art and knowledgeable in the art and can be purchased commercially. It is preferred to use anionic or nonionic surfactants. For example, alkyl polyglycosides can be used as surfactants. Complexing agents are often used to complex copper ions and thus to accelerate the dissolution process of the copper. Corresponding complexing agents are known to the skilled person from the prior art and his expertise and can be purchased commercially. For example, ethylenediaminetetraacetic acid (EDTA), methylglycine diacetic acid, glutamic acid diacetic acid (GLDA) or nitrilotriacetic acid (NTA) can be used as complexing agent.
Korrosionsinhibitoren dienen in der Regel dazu bei der Behandlung der Formkörper enthaltend Kupfer unerwünschte Korrosionseffekte an Materialien zu verhindern bzw. zu unterdrücken. Entsprechende Korrosionsinhibitoren sind dem Fachmann aus dem Stand der Technik und seinem Fachwissen bekannt und können kommerziell erworben werden. Beispielsweise lasse sich Phosphorsäurealkylester, 2-Butin-1 ,4-Diol, Propargylalkohol, Ethinylcarbinolalkoxylat, Polyethy- lenimin, Thiodiglykolethoxylat als Korrosionsinhibitoren einsetzen. In einer weiteren bevorzugten Ausführungsform des erfindungsgemäßen Verfahrens enthält die wässrige Mischung (M) As a rule, corrosion inhibitors are used in the treatment of moldings containing copper to prevent or suppress unwanted corrosion effects on materials. Corresponding corrosion inhibitors are known to those skilled in the art and their knowledge and can be purchased commercially. For example, alkyl phosphates, 2-butyne-1,4-diol, propargyl alcohol, ethynylcarbinol alkoxylate, polyethylene lenimin, thiodiglycol ethoxylate can be used as corrosion inhibitors. In a further preferred embodiment of the process according to the invention, the aqueous mixture contains (M)
(A.) von 10 bis 40 Gew.-%, bevorzugt von 10 bis 25 Gew.-% der chlorfreien Säuren ohne Carboxylgruppen (a.),  (A) from 10 to 40% by weight, preferably from 10 to 25% by weight, of the chlorine-free acids without carboxyl groups (a.),
(B.) von 1 bis 50 Gew.-%, bevorzugt von 10 bis 20 Gew.-%, des Oxidationsmittels (b.), (C.) von 10 bis 89 Gew.-%, bevorzugt von 55 bis 80 Gew.-% wässriges Lösungsmittel (B) from 1 to 50% by weight, preferably from 10 to 20% by weight, of the oxidizing agent (b.), (C.) from 10 to 89% by weight, preferably from 55 to 80% by weight. -% aqueous solvent
(c), und (c), and
(D.) von 0 bis 10 Gew.-% der zusätzlichen Additive (d.),  (D.) from 0 to 10% by weight of the additional additives (d.),
wobei die Mengenangaben jeweils auf die Gesamtmenge der Komponenten (a.), (b.), (c.) und (d.) bezogen sind und die Summe der Mengen aller Komponenten (a.), (b.), (c.) und (d.) 100 Gew.-% beträgt. Besonders bevorzugt sind in der Mischung (M), insbesondere vor der Behandlung des Formkörpers, keine weiteren Komponenten, außer den Komponenten (a.), (b.), (c.) und optional (d.) enthalten. wherein the quantities are in each case based on the total amount of components (a.), (b.), (c.) and (d.) and the sum of the amounts of all components (a.), (b.), (c. ) and (d.) is 100% by weight. In the mixture (M), in particular before the treatment of the shaped body, particular preference is given to containing no further components apart from the components (a.), (B.), (C.) And optionally (d.).
Die Gesamtmenge an allen Additiven (d.) in der wässrigen Mischung (M) liegt wie oben be- schrieben im Bereich von 0 bis 10 Gew.-%, bevorzugt von 0 bis 5 Gew.-%, insbesondere von 0 bis 3 Gew.-%. Tenside werden bevorzugt in einer Menge von 0,5 bis 2 Gew.-% eingesetzt. Komplexbildner werden bevorzugt in einer Menge von 0,5 bis 5 Gew.-% eingesetzt. Korrosions- inhibotoren werden bevorzugt in einer Menge von 0,1 bis 1 Gew.-% eingesetzt. In der Regel weist die wässrige Mischung (M) einen pH-Wert von -0,5 bis 5, bevorzugt von 0 bis 5, besonders bevorzugt, von 0 bis 3, ganz besonders bevorzugt von 0 bis 2, insbesondere von 0 bis 1 auf. Der pH Wert der Mischung (M) wird mittels Glaselektrode bestimmt. The total amount of all additives (d.) In the aqueous mixture (M) is, as described above, in the range from 0 to 10% by weight, preferably from 0 to 5% by weight, in particular from 0 to 3% by weight. -%. Surfactants are preferably used in an amount of 0.5 to 2 wt .-%. Complexing agents are preferably used in an amount of 0.5 to 5 wt .-%. Corrosion inhibitors are preferably used in an amount of 0.1 to 1 wt .-%. In general, the aqueous mixture (M) has a pH of from -0.5 to 5, preferably from 0 to 5, particularly preferably from 0 to 3, very particularly preferably from 0 to 2, in particular from 0 to 1 , The pH of the mixture (M) is determined by glass electrode.
Allgemein kann sich das enthaltene Kupfer im Formkörper beliebig verteilt befinden, solange es zumindest teilweise mit der wässrigen Mischung (M) in Kontakt befindet oder in Kontakt kommt bzw. in Kontakt gebracht wird. Bevorzugt befindet sich das das enthaltene Kupfer zumindest teilweise an mindestens einer Oberfläche des Formkörpers. Ganz besonders bevorzugt als ebene Schicht auf einer Seite des Formkörpers oder auf einer oder mehreren weiteren Metallschichten. Besonders bevorzugt auf einer Schicht enthaltend Molybdän In general, the copper contained may be distributed arbitrarily in the molding as long as it at least partially in contact with the aqueous mixture (M) or comes into contact or is brought into contact. Preferably, the copper contained is at least partially on at least one surface of the shaped body. Very particularly preferred as flat layer on one side of the molding or on one or more other metal layers. Particularly preferred on a layer containing molybdenum
Bevorzugt handelt es sich bei dem Formköper um eine Leiterplatine (Platine) oder Schaltplatte handelt. Preferably, the molded body is a printed circuit board (board) or printed circuit board.
Es wurde überraschend gefunden, dass die notwendigen Ätzzeiten im erfindungsgemäßen Verfahren vergleichbar waren mit Verfahren bei denen Salzsäure eingesetzt wird. Ein weiterer Vorteil des erfindungsgemäßen Verfahrens ist daher, dass die chlorfreien Säuren ohne Car- boxylgruppen, insbesondere Methansulfonsäure, deutlich weniger korrosiv sind als Salzsäure und dennoch zu kurzen Bearbeitungszeiten und glatten geraden Flächen und wohldefinierten Kanten führen. It was surprisingly found that the necessary etching times in the process according to the invention were comparable to processes in which hydrochloric acid is used. Another advantage of the method according to the invention is therefore that the chlorine-free acids without carboxyl groups, in particular methanesulfonic acid, are significantly less corrosive than hydrochloric acid and nevertheless lead to short processing times and smooth straight surfaces and well-defined edges.
Im Rahmen des erfindungsgemäßen Verfahrens zur Behandlung von Formkörpern enthaltend Kupfer, wird in der Regel Kupfer aus dem oder von dem Formkörper entfernt, bevorzugt wird metallisches Kupfer in Form von Kupferionen aus dem oder von dem Formkörper abgetrennt. In the context of the process according to the invention for the treatment of shaped bodies containing copper, copper is usually removed from or from the shaped body, preferably metallic copper in the form of copper ions is separated from or from the shaped body.
In einer bevorzugten Ausführungsform des erfindungsgemäßen Verfahrens enthält die wässrige Mischung (M) nach der Behandlung, bevorzugt nach dem Ätzen oder Beizen zusätzlich gelös- tes Kupfer, bevorzugt in Form von Kupferionen, und die wässrige Mischung wird in einem weiteren Verfahrensschritt vom Festkörper abgetrennt. Man erhält eine sogenannte Abfalllösung. In a preferred embodiment of the process according to the invention, after the treatment, preferably after etching or pickling, the aqueous mixture (M) additionally contains dissolved copper, preferably in the form of copper ions, and the aqueous mixture is separated from the solid in a further process step. A so-called waste solution is obtained.
Ein weiterer Gegenstand der Erfindung ist ein Verfahren zur Aufarbeitung der wässrigen Mischung (M), die zusätzlich (e.) gelöstes Kupfer enthält (Abfalllösung), wobei eine Elektrolyse an dieser Abfalllösung durchgeführt wird, um das gelöste Kupfer zumindest teilweise als metallisches Kupfer abzuscheiden. Typische Bedingungen zur elektrolytischen Gewinnung von Kupfer auf Edelstahlelektroden sind hohe Stromdichten von 250 -1000A/m2 bei 0,3-0,4V. Der Elektrodenabstand liegt bei 5 bi 50 mm. Auf diese Art und Weise ist ein einfaches und kostengünstiges Verfahren zur Wiedergewinnung von Kupfer aus den Abfalllösungen durchführbar. Da die chlorfreien Säuren ohne Car- boxylgruppen kein Chlor enthalten, findet bei der Elektrolyse auch keine störende Chlorentwicklung statt. In der Regel war es bisher für Betriebe notwendig ihre Abfalllösungen zu einem externen Recycling- oder Entsorgungsunternehmen zu transportieren, um dort das Recycling bzw. die Entsorgung durchführen zu lassen. Mit Hilfe des erfindungsgemäßen Verfahrens sind solche Betriebe nun in der Lage kostengünstig eine Aufarbeitung ihrer Abfalllösungen sogar intern durchzuführen und dabei Kupfer wiederzugewinnen. Another object of the invention is a process for working up the aqueous mixture (M), which additionally contains (e.) Dissolved copper (waste solution), wherein an electrolysis is carried out on this waste solution to at least partially deposit the dissolved copper as metallic copper. Typical conditions for the electrowinning of copper on stainless steel electrodes are high current densities of 250-1000A / m 2 at 0.3-0.4V. The electrode distance is 5 to 50 mm. In this way, a simple and inexpensive process for recovering copper from the waste solutions is feasible. Since the chlorine-free acids without carboxyl groups contain no chlorine, the electrolysis does not cause any disturbing chlorine evolution. It has usually been necessary for companies to transport their waste solutions to an external recycling or disposal company in order to have their recycling or disposal carried out there. With the aid of the method according to the invention, such operations are now able to cost-effectively carry out a work-up of their waste solutions internally and thereby recover copper.
Ein weiterer Gegenstand der vorliegenden Erfindung sind Mischungen (MI), enthaltend (a.) von 10 bis 40 Gew.-% Methansulfonsäure, (b.) von 10 bis 20 Gew.-%, bevorzugt von 15 bis 20Another object of the present invention are mixtures (MI), containing (a.) From 10 to 40 wt .-% of methanesulfonic acid, (b.) From 10 to 20 wt .-%, preferably from 15 to 20
Gew.-% Wasserstoffperoxid und (c.) von 40 bis 80 Gew.-% Wasser. Diese Mischungen lassen sich hervorragend auch mit weiteren Additven (d.) im Rahmen des erfindungsgemäßen Verfah- rens zur Behandlung von Formkörpern enthaltend Kupfer einsetzen. In der Regel sind von 0 bis 10 Gew.-% Additive (d.) in den Mischungen enthalten. Die Mengenangaben beziehen sich jeweils auf die Gesamtmenge der Komponenten (a.), (b.), (c.) und optional (d.) und die Summe der Mengen aller Komponenten (a.), (b.), (c), (d.) beträgt 100 Gew.-%. Wt .-% hydrogen peroxide and (c.) From 40 to 80 wt .-% water. These mixtures can also be excellently mixed with further additives (d.) In the context of the process according to the invention. rens for the treatment of moldings containing copper. As a rule, from 0 to 10% by weight of additives (d.) Are contained in the mixtures. The quantities given in each case relate to the total amount of components (a.), (B.), (C.) And optional (d.) And the sum of the amounts of all components (a.), (B.), (C) , (d.) is 100% by weight.
Insbesondere können diese erfindungsgemäßen Mischungen zum Ätzen oder Beizen von Formkörpern enthaltend Kupfer verwendet werden, wobei bevorzugt das enthaltene Kupfer sich zumindest teilweise an mindestens einer Oberfläche des Formkörpers befindet. In einer bevorzugten Ausführungsform der erfindungsgemäßen Verwendung handelt es sich bei dem Formköper um eine Platine. In particular, these mixtures according to the invention can be used for etching or pickling of shaped bodies containing copper, wherein preferably the copper contained is at least partially located on at least one surface of the shaped body. In a preferred embodiment of the use according to the invention, the shaped body is a circuit board.
Die vorliegende Erfindung stellt Verfahren zur Behandlung von Formkörpern enthaltend Kupfer zur Verfügung, die nach der Behandlung eine einfache Wiederaufarbeitung und Rückgewin- nung von Kupfer ermöglichen. Weiterhin werden nasschemischen Ätzverfahren bereitgestellt, die bei der Entfernung von kupferhaltigen Materialien zu wohldefinierten Strukturen, insbesondere zu Strukturen mit glatten Oberflächen und definierten Kanten führen. The present invention provides processes for the treatment of moldings containing copper which, after treatment, allow easy reprocessing and recovery of copper. Furthermore, wet-chemical etching processes are provided which lead to well-defined structures, in particular to structures with smooth surfaces and defined edges, when removing copper-containing materials.
Die Erfindung wird durch die Beispiele näher erläutert, ohne dass die Beispiele den Gegenstand der Erfindung einschränken. The invention is explained in more detail by the examples, without the examples limiting the subject matter of the invention.
Beispiele Examples
Die wässrige Mischung M1 wurde durch Mischen der Einzelkomponenten mit Wasser erhalten. The aqueous mixture M1 was obtained by mixing the individual components with water.
M1 : 10 Gew.-% Methansulfonsäure (MSA), 15 Gew.-% H202, 75 Gew.-% H20 M1: 10% by weight of methanesulfonic acid (MSA), 15% by weight of H 2 O 2 , 75% by weight of H 2 O.
Als Vergleichsmischung V1 wurde eine Mischung von 10 Gew.-% MSA und 90 Gew.-% H2O eingesetzt. As a comparison mixture V1, a mixture of 10 wt .-% MSA and 90 wt .-% H2O was used.
Beispiel 1 : Messung des Polarisationswiderstandes Rp Example 1: Measurement of polarization resistance Rp
Die Bestimmung des Polarisationswiderstandes wurde in einem Potentialbereich von ±5 mV gegen das Korrosionspotential (Ecorr) unter Verwendung einer Scanrate von 0,1 mV/s durchge- führt. Das gemessene Potential (E) aufgetragen gegen die Stromdichte (j) wurde an eine Gerade gefittet, aus der Steigung der Geraden wurde Rp ermittelt. The determination of the polarization resistance was carried out in a potential range of ± 5 mV against the corrosion potential (Ecorr) using a scan rate of 0.1 mV / s. The measured potential (E) plotted against the current density (j) was fitted to a straight line, from the slope of the line Rp was determined.
Der Rp-Wert gibt an, welchen Widerstand ein Metall dem Transfer von Elektronen auf eine elektroaktive Spezies in Lösung entgegensetzt. Höhere Werte von Rp bedeuten einen höheren Korrosionswiderstand gegen gleichförmige Korrosion. Geringere Werte korrelieren somit mit einer schnelleren Auflösung des Metalls. Auflösung von Kupfer: The Rp value indicates the resistance of a metal to the transfer of electrons to an electroactive species in solution. Higher values of Rp mean higher corrosion resistance to uniform corrosion. Lower values thus correlate with a faster dissolution of the metal. Resolution of copper:
Für V1 wurden in einem Zeitraum von 20 Stunden Rp-Werte von 2000 bis 14000 Qcm2 bestimmt, während die Mischung M1 in einem Zeitraum von 50 Minuten bereits einen Wert von 4 Qcm2 erreichte. For V1, Rp values of 2000 to 14000 Qcm 2 were determined over a period of 20 hours, while mixture M1 reached a value of 4 Qcm 2 over a period of 50 minutes.
Beispiel 2: Messung des Potentials Example 2: Measurement of the potential
Auch die Messungen des Potentials (E: gegen Referenzzelle gesättigte Kalomelbezugselektro- de (SCE)) gegen die Zeit oder die Stromdichte zeigen die deutlich erhöhte Geschwindigkeit der Kupferauflösung für M1 gegenüber V1 . Der Wert von E beträgt für M1 etwa +0,22 V während für V1 etwa -0,5 V in einem Zeitraum bis zu 60 Stunden erreicht werden.  Measurements of the potential (E: caloric reference electrode saturated with reference cell vs. SCE) versus time or current density show the significantly increased rate of copper dissolution for M1 compared to V1. The value of E for M1 is about +0.22 V while for V1 it is about -0.5 V in a period up to 60 hours.
Beispiel 3: Ätzen von Leiterplatten Example 3: Etching printed circuit boards
Auf mit Kupfer beschichteten Leiterplatten (5 x 2 cm, Kupferschichtdicke 45μηη, auf Epoxid- Kunststoff) wurden mit Hilfe eines wasserfesten Stiftes geometrische Muster aufgezeichnet. On copper coated circuit boards (5 x 2 cm, copper layer thickness 45μηη, on epoxy plastic) geometric patterns were recorded using a waterproof pen.
Es wurden folgende wässrige Vergleichslösungen (VL1 -VL5) hergestellt:
Figure imgf000008_0001
The following aqueous comparative solutions (VL1-VL5) were prepared:
Figure imgf000008_0001
Bei VL1 und VL2 ist der verbleibende Rest auf 100 Gew.-% Wasser. Weiterhin wurden folgende erfindungsgemäße wässrige Lösungen (L6-L15) hergestellt:  For VL1 and VL2, the remainder is 100% by weight of water. Furthermore, the following aqueous solutions according to the invention (L6-L15) were prepared:
Figure imgf000008_0002
Figure imgf000008_0002
Der verbleibende Rest auf 100 Gew.-% ist bei L6 bis L15 Wasser. Die mit Kupfer beschichteten Leiterplatten wurden bei einer Temperatur von 18 °C in 100 ml der jeweiligen Lösung gelegt.  The remainder to 100% by weight is water at L6 to L15. The copper-coated circuit boards were placed at a temperature of 18 ° C in 100 ml of the respective solution.
Es ergaben sich die folgenden Auflösungszeiten in Minuten: The following dissolution times resulted in minutes:
VL1 VL2 VL3 VL4 VL5 L6 L7 L8 L9 L10 L1 1 L12 L13 L14 L15  VL1 VL2 VL3 VL4 VL5 L6 L7 L8 L9 L10 L1 1 L12 L13 L14 L15
10 12 50 50 50 12 12 12 24 24 12 12 12 12 12 Nach visueller Beurteilung der Auflösung wurde der Versuch nach der entsprechenden Zeit beendet um weitere Oxidation des Kupfers zu unterbinden. 10 12 50 50 50 12 12 12 24 24 12 12 12 12 12 After visual assessment of the dissolution of the experiment was terminated after the appropriate time to prevent further oxidation of the copper.
Die mit Kupfer beschichteten Leiterplatten wurden weiterhin bei einer Temperatur von 18°C für 12 bis 50 Minuten in 100 ml der jeweiligen Lösung gelegt. The copper-coated circuit boards were further laid at 100 ° C. of the respective solution at a temperature of 18 ° C. for 12 to 50 minutes.
Für die Atzqualität der Lösungen ergab sich folgend
Figure imgf000009_0001
The quality of the solutions was as follows
Figure imgf000009_0001
Es handelt sich um eine optische Bewertung der Ätzqualität. Es wurde bewertet, ob die geometrischen Muster nach dem Ätzen vergleichbar mit der VL1 : o, besser: +, oder schlechter: - zu erkennen waren. It is an optical evaluation of the etching quality. It was evaluated whether the geometric patterns after etching were comparable to VL1: o, better: +, or worse: -.

Claims

Patentansprüche: claims:
1 . Verfahren zur Behandlung von Formkörpern enthaltend Kupfer, dadurch gekennzeichnet, dass eine wässrige Mischung (M), enthaltend 1 . Process for the treatment of shaped bodies containing copper, characterized in that an aqueous mixture (M) containing
(a.) chlorfreie Säuren ohne Carboxylgruppen,  (a.) chlorine-free acids without carboxyl groups,
(b.) Oxidationsmittel,  (b.) oxidizing agent,
(c.) wässriges Lösungsmittel,  (c.) aqueous solvent,
mit dem Formkörper in Kontakt gebracht wird.  is brought into contact with the molding.
2. Verfahren nach Anspruch 1 , dadurch gekennzeichnet, dass die wässrige Mischung (M) weiterhin 2. The method according to claim 1, characterized in that the aqueous mixture (M) continues
(d.) zusätzliche Additive enthält.  (d.) contains additional additives.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die wässrige Mischung (M) 3. The method according to claim 1 or 2, characterized in that the aqueous mixture (M)
(A.) von 10 bis 40 Gew.-% der chlorfreien Säuren ohne Carboxylgruppen (a.).  (A) from 10 to 40% by weight of the chlorine-free acids without carboxyl groups (a.).
(B.) von 1 bis 50 Gew.-% des Oxidationsmittels (b.),  (B) from 1 to 50% by weight of the oxidizing agent (b.),
(C.) von 10 bis 89 Gew.-% wässriges Lösungsmittel (c), und (D.) von 0 bis 10 Gew.-% der zusätzlichen Additive (d.), enthält wobei die Mengenangaben jeweils auf die Gesamtmenge der Komponenten (a.), (b.), (c.) und (d.) bezogen sind und die Summe der Mengen aller Komponenten (a.), (b.), (c.) und (d.) 100 Gew.-% beträgt.  (C) from 10 to 89% by weight of aqueous solvent (c), and (D) from 0 to 10% by weight of the additional additives (d.), The amounts given being based on the total amount of components ( a.), (b.), (c.) and (d.) are referred to and the sum of the amounts of all components (a.), (b.), (c.) and (d.) 100 wt. % is.
4. Verfahren nach den Ansprüchen 1 bis 3, dadurch gekennzeichnet, dass die wässrige Mischung (M) einen pH-Wert von -0,5 bis 5 aufweist. 4. Process according to claims 1 to 3, characterized in that the aqueous mixture (M) has a pH of -0.5 to 5.
5. Verfahren nach den Ansprüchen 1 bis 4, dadurch gekennzeichnet, dass das enthaltene Kupfer sich zumindest teilweise an mindestens einer Oberfläche des Formkörpers befindet und in Kontakt mit der wässrigen Mischung gebracht wird. 5. The method according to claims 1 to 4, characterized in that the copper contained is at least partially located on at least one surface of the shaped body and is brought into contact with the aqueous mixture.
6. Verfahren nach den Ansprüchen 1 bis 5, dadurch gekennzeichnet, dass es sich bei dem Formköper um eine Platine handelt. 6. Process according to claims 1 to 5, characterized in that the shaped body is a circuit board.
7. Verfahren nach den Ansprüchen 1 bis 6, dadurch gekennzeichnet, dass die wässrige Mischung (M) nach dem Ätzen oder Beizen zusätzlich (e.) gelöstes Kupfer enthält und vom Festkörper abgetrennt wird. 7. Process according to claims 1 to 6, characterized in that the aqueous mixture (M) additionally contains (e.) Dissolved copper after the etching or pickling and is separated from the solid.
8. Verfahren zur Aufarbeitung der abgetrennten wässrigen Mischung (M), die zusätzlich gelöstes Kupfer enthält gemäß Anspruch 7, dadurch gekennzeichnet, dass eine Elektrolyse durchgeführt wird, um das gelöste Kupfer zumindest teilweise als metallisches Kupfer abzuscheiden. 8. A process for working up the separated aqueous mixture (M), which additionally contains dissolved copper according to claim 7, characterized in that an electrolysis is performed to at least partially deposit the dissolved copper as metallic copper.
9. Mischungen (MI), enthaltend 9. Mixtures (MI) containing
(a.) von 10 bis 40 Gew.-% Methansulfonsäure,  (a.) from 10 to 40% by weight of methanesulfonic acid,
(b.) von 10 bis 20 Gew.-% Wasserstoffperoxid  (b.) From 10 to 20 wt .-% hydrogen peroxide
(c.) von 40 bis 80 Gew.-% Wasser.  (c.) From 40 to 80 wt .-% water.
10. Verwendung von Mischungen gemäß den Ansprüchen 1 bis 7 oder nach Anspruch 9 zum Ätzen oder Beizen von Formkörpern enthaltend Kupfer. 10. Use of mixtures according to claims 1 to 7 or according to claim 9 for etching or pickling of moldings containing copper.
1 1 . Verwendung nach Anspruch 10, wobei das enthaltene Kupfer sich zumindest teilweise an mindestens einer Oberfläche des Formkörpers befindet. 1 1. Use according to claim 10, wherein the copper contained is at least partially on at least one surface of the molding.
12. Verwendung nach Anspruch 10 oder 1 1 , wobei es sich bei dem Formköper um eine Platine handelt. 12. Use according to claim 10 or 11, wherein the shaped body is a printed circuit board.
PCT/EP2013/071966 2012-10-25 2013-10-21 Treatment of preforms containing copper with a mixture containing chlorine-free and carboxyl-free acids and oxidants WO2014064050A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12189999 2012-10-25
EP12189999.1 2012-10-25

Publications (1)

Publication Number Publication Date
WO2014064050A1 true WO2014064050A1 (en) 2014-05-01

Family

ID=47142951

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/071966 WO2014064050A1 (en) 2012-10-25 2013-10-21 Treatment of preforms containing copper with a mixture containing chlorine-free and carboxyl-free acids and oxidants

Country Status (2)

Country Link
TW (1) TW201418521A (en)
WO (1) WO2014064050A1 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
US4632727A (en) * 1985-08-12 1986-12-30 Psi Star Copper etching process and solution
EP0665309A1 (en) * 1994-01-31 1995-08-02 Emil Krechen Industrievertretungen GmbH Copper etching process
DE19732419A1 (en) * 1996-07-29 1998-02-05 Ebara Densan Ltd Etching agent used in production of circuit boards
US20040089838A1 (en) * 1998-06-09 2004-05-13 Ebara Densan Ltd. Method for roughening copper surface
US20050056616A1 (en) 2003-09-17 2005-03-17 International Business Machines Corporation Method for isotropic etching of copper
US7465408B1 (en) 2003-12-03 2008-12-16 Advanced Micro Devices, Inc. Solutions for controlled, selective etching of copper
WO2011017119A2 (en) 2009-08-04 2011-02-10 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
US4632727A (en) * 1985-08-12 1986-12-30 Psi Star Copper etching process and solution
EP0665309A1 (en) * 1994-01-31 1995-08-02 Emil Krechen Industrievertretungen GmbH Copper etching process
DE19732419A1 (en) * 1996-07-29 1998-02-05 Ebara Densan Ltd Etching agent used in production of circuit boards
US20040089838A1 (en) * 1998-06-09 2004-05-13 Ebara Densan Ltd. Method for roughening copper surface
US20050056616A1 (en) 2003-09-17 2005-03-17 International Business Machines Corporation Method for isotropic etching of copper
US20060183056A1 (en) 2003-09-17 2006-08-17 International Business Machines Corporation Method for isotropic etching of copper
US7465408B1 (en) 2003-12-03 2008-12-16 Advanced Micro Devices, Inc. Solutions for controlled, selective etching of copper
WO2011017119A2 (en) 2009-08-04 2011-02-10 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing

Also Published As

Publication number Publication date
TW201418521A (en) 2014-05-16

Similar Documents

Publication Publication Date Title
DE60024707T2 (en) Cleaning solution for substrates of electronic devices
DE102004064161B4 (en) A method of etching metals selected from nickel, chromium, nickel-chromium alloys and / or palladium
DE69820397T2 (en) Etchants and their use
DE60108286T2 (en) Removal agent for polymer
DE60118015T2 (en) PHOTORESIS DISTANCE / PURIFICATION COMPOSITIONS WITH AROMATIC ACID INHIBITORS
DE2533357C3 (en) Azeotrope-like composition for cleaning circuit boards
DE102008033174B3 (en) Cyanide-free electrolyte composition for the electrodeposition of a copper layer and method for the deposition of a copper-containing layer
DE2421313A1 (en) SOLUTION FOR THE CHEMICAL DISSOLUTION TREATMENT OF TIN OR ITS ALLOYS
KR101404511B1 (en) Etchant composition, and method for etching a multi-layered metal film
DE102005038414A1 (en) Stabilized etching solutions for etching Cu and Cu / Ni layers
DE19653681A1 (en) Process for the electrolytic deposition of copper layers with uniform layer thickness and good optical and metal-physical properties
DE1815148C3 (en) Method of bonding a surface containing at least 50 percent by weight copper to an organic material
DE2601861A1 (en) PROCESS FOR MANUFACTURING A CONTACT WIRE WITH LOW TRANSITION RESISTANCE FROM ALUMINUM OR AN ALUMINUM ALLOY
EP3055401B1 (en) Use of pluriphasic liquids for stripping crosslinked photoresist
DE3338175C2 (en)
CN105177578A (en) Deplating liquid and deplating method for deplating copper base palladium-nickel alloy plating layer
DE10302596A1 (en) Treatment of metal surfaces with a modified oxide exchange compound
DE102017207237A1 (en) Process for corrosion-protective treatment of a metallic surface with reduced pickling removal
DE3941524C2 (en) A composition for removing a layer of a metal from the group consisting of tin, lead and tin / lead alloy from a copper substrate and using the same
DE102005041533B3 (en) Aqueous cleaning solution for workpiece with solder stopping mask and final surface layer, contains ethanolamine, alcohol and guanidine compounds, effectively removing ionic contaminants
US20140121145A1 (en) Treatment of shaped bodies comprising copper with a mixture comprising chlorine-free acids and oxidizing agent
WO2014064050A1 (en) Treatment of preforms containing copper with a mixture containing chlorine-free and carboxyl-free acids and oxidants
DE10227867A1 (en) Composition for removing sidewall residues
WO2017186929A1 (en) Composition for reducing the removal of material by pickling in the pickling of metal surfaces that contain galvanized and/or ungalvanized steel
KR20160107761A (en) Etchant composition for etching an indium oxide layer and method of manufacturing a display substrate using the etchant composition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13779830

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13779830

Country of ref document: EP

Kind code of ref document: A1