WO2014051773A1 - Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer - Google Patents

Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer Download PDF

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Publication number
WO2014051773A1
WO2014051773A1 PCT/US2013/047430 US2013047430W WO2014051773A1 WO 2014051773 A1 WO2014051773 A1 WO 2014051773A1 US 2013047430 W US2013047430 W US 2013047430W WO 2014051773 A1 WO2014051773 A1 WO 2014051773A1
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Prior art keywords
germanium
buffer layer
layer
parasitic leakage
leakage barrier
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PCT/US2013/047430
Other languages
French (fr)
Inventor
Ravi Pillarisetty
Niti Goel
Han Wui Then
Van H. Le
Willy Rachmady
Marko Radosavljevic
Gilbert Dewey
Benjamin Chu-Kung
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Intel Corporation
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Application filed by Intel Corporation filed Critical Intel Corporation
Priority to CN201380045055.8A priority Critical patent/CN104584224B/en
Priority to KR1020157003163A priority patent/KR101778866B1/en
Priority to EP13842724.0A priority patent/EP2901490B1/en
Publication of WO2014051773A1 publication Critical patent/WO2014051773A1/en

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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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    • H01L29/107—Substrate region of field-effect devices
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    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Definitions

  • Embodiments of the invention are in the field of semiconductor devices and, in particular, semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers.
  • tri-gate transistors In the manufacture of integrated circuit devices, multi-gate transistors, such as tri-gate transistors, have become more prevalent as device dimensions continue to scale down. In conventional processes, tri-gate transistors are generally fabricated on either bulk silicon substrates or silicon-on-insulator substrates. In some instances, bulk silicon substrates are preferred due to their lower cost and because they enable a less complicated tri-gate fabrication process. In other instances, silicon-on-insulator substrates are preferred because of the reduced leakage they can offer.
  • the fabrication process for tri-gate transistors often encounters problems when aligning the bottom of the metal gate electrode with the source and drain extension tips at the bottom of the transistor body (i.e., the "fin").
  • the tri-gate transistor is formed on a bulk substrate, proper alignment is needed for optimal gate control and to reduce short-channel effects. For instance, if the source and drain extension tips are deeper than the metal gate electrode, punch-through may occur. Alternately, if the metal gate electrode is deeper than the source and drain extension tips, the result may be an unwanted gate capacitance parasitics.
  • Figure 1 illustrates a cross-sectional view of a conventional semiconductor device.
  • Figure 2 illustrates a cross-sectional view of a semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • Figure 3 illustrates a cross-sectional view of a planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • Figure 4 illustrates an angled view of a non-planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • Figure 5A illustrates a three-dimensional cross-sectional view of a nanowire-based semiconductor structure, in accordance with an embodiment of the present invention.
  • Figure 5B illustrates a cross-sectional channel view of the nanowire-based semiconductor structure of Figure 5A, as taken along the a-a' axis, in accordance with an embodiment of the present invention.
  • Figure 5C illustrates a cross-sectional spacer view of the nanowire-based semiconductor structure of Figure 5A, as taken along the b-b' axis, in accordance with an embodiment of the present invention.
  • Figures 6A-6D illustrate three-dimensional cross-sectional views representing various operations in a method of fabricating a nanowire semiconductor device having a vertical arrangement of germanium nanowires and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • Figure 7 illustrates a computing device in accordance with one implementation of the invention.
  • One or more embodiments described below are directed to approaches, and the resulting structures, to reducing parasitic leakage in germanium active layer devices.
  • one or more embodiments may be particularly effective for improving performance in germanium-based nanowire or gate-all-around devices.
  • a conventional device 100 includes a germanium (Ge) channel region 102 grown above a silicon (Si) substrate 104 (e.g., as a portion of a silicon wafer) via relaxed silicon germanium (SiGe) buffer layers 106 (e.g., 70% SiGe buffer, which grades to 50% SiGe and ultimately to the essentially pure Ge channel region 102) to manage lattice mismatch between Ge and Si.
  • SiGe buffer layers 106 are, however, fairly conductive in that they allow parallel conduction within the region underlying the channel region 102, at least within the SiGe buffer layers 106.
  • the parallel conduction may cause parasitic leakage in the device 100, as depicted by arrow 108, from the source region 110 to the drain region 112.
  • Figure 1 also depicts isolation regions 114 and a gate electrode stack 116, such as a titanium nitride (TiN) gate 116B and high-k gate dielectric 116A electrode stack 116. It is to be understood that such leakage may occur even in the case of a wrap-around or nanowire arrangement, where a bottom gate electrode stack 116' disposed on a bottom gate insulator (BGI) structure 120 is included.
  • BGI bottom gate insulator
  • parasitic leakage 108 In addition to, or in conjunction with, parasitic leakage 108, poor interfaces formed between the isolation regions 114 and the germanium-based buffer layers may generate significant surface states causing or contributing to the parasitic leakage. Regardless of how generated, parasitic leakage 108 can hamper transistor performance since it may degrade the off state leakage of the device. Ultimately, such parasitic leakage can render fabricating a low leakage germanium-based semiconductor device difficult to achieve.
  • a parasitic leakage barrier layer is integrated with a germanium-based semiconductor device.
  • Figure 2 illustrates a cross-sectional view of a semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • a semiconductor device 200 includes a germanium (Ge) channel region 202 grown on a silicon (Si) substrate 204 (e.g., as a portion of a silicon wafer) via silicon germanium (SiGe) buffer layers 206A and 206B (e.g., 70% SiGe buffer 206A, which grades to 50% SiGe 206B and ultimately to the essentially pure Ge channel region 202) to manage lattice mismatch between Ge and Si.
  • SiGe buffer layers 206A and 206B e.g., 70% SiGe buffer 206A, which grades to 50% SiGe 206B and ultimately to the essentially pure Ge channel region 202
  • a parasitic leakage barrier 230 is disposed between the buffer layers 206A and 206B.
  • Semiconductor device 200 may also include isolation regions 214 and a gate electrode stack 216, such as a titanium nitride (TiN) gate 216B and high-k gate dielectric 216A electrode stack 216.
  • a gate electrode stack 216 such as a titanium nitride (TiN) gate 216B and high-k gate dielectric 216A electrode stack 216.
  • a wrap-around or nanowire arrangement may be formed, where a bottom gate electrode stack 216' disposed on a bottom gate insulator (BGI) structure 220 is included.
  • Source and drain regions 210 and 212, respectively, are included on either side of gate electrode stack 216, as is also depicted in Figure 2.
  • the parasitic leakage barrier 230 blocks a leakage path 208 from source region 210 to drain region 212, which was not blocked in device 100 of Figure 1.
  • germanium As used throughout, the terms pure or essentially pure germanium may be used to describe a germanium material composed of a very substantial amount of, if not all, germanium.
  • germanium may be difficult to form and, hence, could include a tiny percentage of Si.
  • the Si may be included as an unavoidable impurity or component during deposition of Ge or may "contaminate" the Ge upon diffusion during post deposition processing.
  • embodiments described herein directed to a Ge channel may include Ge channels that contain a relatively small amount, e.g., "impurity" level, non-Ge atoms or species, such as Si.
  • the parasitic leakage barrier 230 includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer 206A, greater than a band-gap of the second buffer layer 206B, and greater than a band-gap of the germanium active layer 202. In that way, low leakage pathways are blocked by the higher band-gap semiconductor layer. In an embodiment, however, the parasitic leakage barrier 230 does not disrupt an effective lattice constant of the first buffer layer 206A. In that way, e.g., the grading from a silicon substrate to a germanium active region is maintained without interrupting or causing defects in the transition from substrate 204 to active region 202. Thus, in one embodiment, a higher band-gap material such as silicon is formed to a thickness sufficiently thin to not alter the lattice constant of the buffer layer 206.
  • the substrate 204 is composed essentially of silicon
  • the first buffer layer 206A is composed of silicon germanium
  • the second buffer layer 206B is composed of silicon germanium having a higher concentration of germanium than the first buffer layer (e.g., 50% Ge versus 30% Ge)
  • the germanium active layer 202 is composed essentially of germanium.
  • the parasitic leakage barrier 230 includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers (e.g., approximately 10% Ge).
  • the parasitic leakage barrier 230 includes alternating first and second layer types 230A and 230B, an example layering structure of which is depicted in Figure 2.
  • the first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the second layer types are composed essentially of the same material as the first buffer layer 206A.
  • the first buffer layer 206A is composed approximately of Sio .7 Geoj
  • the second buffer layer is composed approximately of Sio .3 Geo .7
  • the first layer types 203A are composed essentially of silicon and have a thickness approximately in the range of 1-3 nanometers.
  • the number of each layer may vary as may the identity of the first and last layers (i.e., first or second layer type).
  • approximately 3-5 alternating pairs 230A and 230B make up the parasitic leakage barrier 230.
  • the second layer types are composed essentially of the same material as the second buffer layer.
  • the source and drain regions 210/212 are disposed in the germanium active layer 202 and in the second buffer layer 206B, but are not in contact with the parasitic leakage barrier 230, as depicted in Figure 2.
  • Figure 2 is shown generically to represent a variety of options.
  • the source and drain regions are formed by doping portions of the germanium active layer 202 and in the second buffer layer 206B, as described in greater detail in association with Figure 3.
  • portions of the germanium active layer 202 and in the second buffer layer 206B and a different semiconductor material is grown to form the source and drain regions 210/212.
  • Substrate 204 may be composed of a semiconductor material that can withstand a manufacturing process and in which charge can migrate.
  • the substrate 204 is a bulk substrate, such as a P-type silicon substrate as is commonly used in the semiconductor industry.
  • substrate 204 is composed of a crystalline silicon,
  • substrate 204 is composed of an epitaxial layer grown atop a distinct crystalline substrate, e.g. a silicon epitaxial layer grown atop a boron-doped bulk silicon mono-crystalline substrate.
  • Substrate 204 may instead include an insulating layer disposed in between a bulk crystal substrate and an epitaxial layer to form, for example, a silicon-on-insulator substrate.
  • the insulating layer is composed of a material such as, but not limited to, silicon dioxide, silicon nitride, silicon oxy-nitride or a high-k dielectric layer.
  • Substrate 204 may alternatively be composed of a group ⁇ -V material.
  • substrate 204 is composed of a ⁇ -V material such as, but not limited to, gallium nitride, gallium phosphide, gallium arsenide, indium phosphide, indium antimonide, indium gallium arsenide, aluminum gallium arsenide, indium gallium phosphide, or a combination thereof.
  • substrate 204 is composed of a ⁇ -V material and charge-carrier dopant impurity atoms such as, but not limited to, carbon, silicon, germanium, oxygen, sulfur, selenium or tellurium.
  • the gate electrode of gate electrode stack 216 is composed of a metal gate and the gate dielectric layer is composed of a high-K material.
  • the gate dielectric layer is composed of a material such as, but not limited to, hafnium oxide, hafnium oxy-nitride, hafnium silicate, lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, or a combination thereof.
  • a portion of gate dielectric layer may include a layer of native oxide formed from the top few layers of the germanium active layer 202.
  • the gate dielectric layer is composed of a top high-k portion and a lower portion composed of an oxide of a semiconductor material.
  • the gate dielectric layer is composed of a top portion of hafnium oxide and a bottom portion of silicon dioxide or silicon oxy-nitride.
  • the gate electrode is composed of a metal layer such as, but not limited to, metal nitrides, metal carbides, metal silicides, metal aluminides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt, nickel or conductive metal oxides.
  • the gate electrode is composed of a non-workfunction- setting fill material formed above a metal workfunction-setting layer.
  • the gate electrode is composed of a P-type or N-type material.
  • the gate electrode stack 216 may also include dielectric spacers, not depicted.
  • the semiconductor device 200 is shown generically to cover both planar and non-planar devices, including gate-all-around devices. Such devices are described more specifically below with Figure 3 (planar device), Figure 4 (non-planar device) and Figure 5 (nanowire-based device).
  • a parasitic leakage barrier is integrated with the device. The parasitic leakage barrier may be effective for suppressing the leakage in such devices.
  • semiconductor device 200 may be a semiconductor device incorporating a gate, a channel region and a pair of source/drain regions.
  • semiconductor device 200 is one such as, but not limited to, a MOS-FET or a Microelectromechanical System (MEMS).
  • semiconductor device 200 is a planar or three-dimensional MOS-FET and is an isolated device or is one device in a plurality of nested devices.
  • N- and P-channel transistors may be fabricated on a single substrate to form a CMOS integrated circuit.
  • additional interconnect wiring may be fabricated in order to integrate such devices into an integrated circuit.
  • Figure 3 illustrates a cross-sectional view of a planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • the semiconductor device is a planar device having a gate electrode stack disposed on only a single surface of a germanium active layer.
  • a planar semiconductor device 300 includes a first buffer layer 206A disposed above a substrate 204.
  • a parasitic leakage barrier 230 is disposed above the first buffer layer 206A.
  • a second buffer layer 206B is disposed above the parasitic leakage barrier 230.
  • a germanium active layer 202 is disposed above the second buffer layer 206B.
  • a gate electrode stack 216 is disposed above the germanium active layer 202.
  • Source and drain regions 210/212 are disposed above the parasitic leakage barrier 230, on either side of the gate electrode stack 216. More specifically, in an embodiment, the source and drain regions 210/212 are formed by doping portions of the germanium active layer 202 and in the second buffer layer 206B, as depicted in Figure 3.
  • the first buffer layer 206A is disposed on the substrate 204
  • the parasitic leakage barrier 230 is disposed on the first buffer layer 206A
  • the second buffer layer 206B is disposed on the parasitic leakage barrier 230
  • the germanium active layer 202 is disposed on the second buffer layer 206B
  • the gate electrode stack 216 is disposed on the germanium active layer 202, as is also depicted in Figure 3.
  • semiconductor device 300 may also include isolation regions 214. Although depicted as being somewhat aligned with the bottom of the parasitic leakage barrier 230, it is to be understood that the depth of the isolation regions 214 may vary. It is also to be understood that like feature designations of Figure 3 may be as described in association with Figure 2.
  • FIG. 4 illustrates an angled view of a non-planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • a non-planar semiconductor device 400 includes a first buffer layer 206A disposed above a substrate 204.
  • a parasitic leakage barrier 230 is disposed above the first buffer layer 206A.
  • a second buffer layer 206B is disposed above the parasitic leakage barrier 230.
  • a three-dimensional germanium active layer 202 is disposed above the second buffer layer 206B.
  • a gate electrode stack 216 is disposed on and at least partially surrounds the three- dimensional germanium active layer 202.
  • Source and drain regions 210/212 are disposed above the parasitic leakage barrier 230, on either side of the gate electrode stack 216. Also depicted are isolation regions 214 and gate electrode spacers 440.
  • the gate electrode stack 216 completely surrounds the three-dimensional germanium active layer 202.
  • the non-planar semiconductor device 400 further includes a bottom gate insulating (BGI) structure (220 in Figure 2) disposed between the parasitic leakage barrier 230 and a bottom portion of the gate electrode stack (216' in Figure 2).
  • BGI bottom gate insulating
  • the gate electrode 216 only surrounds the three-dimensional germanium active layer 202 on the exposed top and sides of the three-dimensional germanium active layer 202.
  • Figure 5A illustrates a three-dimensional cross-sectional view of a germanium nanowire-based semiconductor structure, in accordance with an embodiment of the present invention.
  • Figure 5B illustrates a cross-sectional channel view of the germanium nanowire-based semiconductor structure of Figure 5A, as taken along the a-a' axis.
  • Figure 5C illustrates a cross-sectional spacer view of the germanium nanowire-based semiconductor structure of Figure 5 A, as taken along the b-b' axis.
  • a semiconductor device 500 includes one or more vertically stacked germanium nanowires (550 set) disposed above a substrate 204.
  • Embodiments herein are targeted at both single wire devices and multiple wire devices.
  • a three nanowire-based devices having nanowires 550A, 550B and 550C is shown for illustrative purposes.
  • nanowire 550A is used as an example where description is focused on only one of the nanowires. It is to be understood that where attributes of one nanowire are described, embodiments based on a plurality of nanowires may have the same attributes for each of the nanowires.
  • At least the first nanowire 550A includes a germanium channel region 202.
  • the germanium channel region 202 has a length (L).
  • the germanium channel region 202 also has a perimeter orthogonal to the length (L).
  • a gate electrode stack 216 surrounds the entire perimeter of each of the channel regions of each nanowire 550, including germanium channel region 202.
  • the gate electrode stack 216 includes a gate electrode along with a gate dielectric layer disposed between the channel regions and the gate electrode (not individually shown).
  • the germanium channel region 202 and the channel regions of the additional nanowires 550B and 550C are discrete in that they are completely surrounded by the gate electrode stack 216 without any intervening material such as underlying substrate material or overlying channel fabrication materials. Accordingly, in embodiments having a plurality of nanowires 5550, the channel regions of the nanowires are also discrete relative to one another, as depicted in Figure 5B.
  • parasitic leakage barrier 230 is disposed above a first buffer layer 206A which is disposed above the substrate 204.
  • the parasitic leakage barrier 230 is further disposed below the one or more nanowires 550.
  • the germanium channel region 202 is completely surrounded by gate electrode 216 and a bottom gate insulation (BGI) layer 220 is disposed between the parasitic leakage barrier 230 and a bottom portion of the gate electrode stack 216.
  • BGI bottom gate insulation
  • each of the nanowires 550 also includes source and drain regions 210 and 212 disposed in the nanowire on either side of the channel regions, including on either side of germanium channel region 202.
  • the source and drain regions 210/212 are disposed either on or above (with an intervening second buffer layer portion 206B, not depicted) the parasitic leakage barrier 230.
  • the source and drain regions 210/212 are embedded source and drain regions, e.g., at least a portion of the nanowires is removed and replaced with a source/drain material region.
  • the source and drain regions 210/212 are composed of portions of the one or more germanium nanowires 550.
  • a pair of contacts 570 is disposed over the source/drain regions 210/212.
  • the semiconductor device 500 further includes a pair of spacers 540.
  • the spacers 540 are disposed between the gate electrode stack 216 and the pair of contacts 570.
  • the channel regions and the source/drain regions are, in at least several embodiments, made to be discrete. However, not all regions of the nanowires 550 need be, or even can be made to be discrete.
  • nanowires 550A-550C are not discrete at the location under spacers 540.
  • the stack of nanowires 550A-550C have intervening semiconductor material 580 there between, such as silicon germanium or silicon intervening between germanium nanowires.
  • the bottom nanowire 550A is still in contact with a portion of a second buffer layer 206B.
  • a portion of the plurality of vertically stacked nanowires 550 under one or both of the spacers 540 is non- discrete.
  • CMOS architecture may also be formed to include both NMOS and PMOS nanowire-based devices disposed on or above the same substrate.
  • the nanowires 550 may be sized as wires or ribbons, and may have squared-off or rounded corners.
  • Figures 6A-6D illustrate three-dimensional cross-sectional views representing various operations in a method of fabricating a nanowire semiconductor device having a vertical arrangement of germanium nanowires and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • Figures 6A-6D illustrate three-dimensional cross-sectional views representing various operations in a method of fabricating a nanowire semiconductor device having a vertical arrangement of germanium nanowires and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
  • a fin 612 is formed above a substrate 602.
  • the fin includes germanium wire-forming layers 604 and 608 and an intervening material layer 606, such as a silicon or silicon germanium layer.
  • the fin also includes a patterned portion of a buffer layer 610, such as the second buffer layers described above.
  • the fin is disposed on a parasitic leakage barrier layer 650.
  • a grading stack is disposed directly between the substrate 602 and the parasitic leakage barrier layer 650.
  • Figure 6B illustrates the fin-type structure 612 with three sacrificial gates 614A, 614B, and 614C disposed thereon.
  • the three sacrificial gates 614A, 614B, and 614C are composed of a sacrificial gate oxide layer 616 and a sacrificial polysilicon gate layer 618 which are, e.g., blanket deposited and patterned with a plasma etch process.
  • spacers may be formed on the sidewalls of the three sacrificial gates 614A, 614B, and 614C, doping may be performed in regions 620 of the fin-type structure 612 shown in Figure 6B (e.g., tip and/or source and drain type doping), and an interlayer dielectric layer may be formed to cover and then re-expose the three sacrificial gates 614A, 614B, and 614C. The interlayer dielectric layer may then be polished to expose the three sacrificial gates 614A, 614B, and 614C for a replacement gate, or gate-last, process. Referring to Figure 6C, the three sacrificial gates 614A, 614B, and 614C are exposed, along with spacers 622 and interlayer dielectric layer 624.
  • the sacrificial gates 614A, 614B, and 614C may then be removed, e.g., in a replacement gate or gate-last process flow, to expose channel portions of the fin-type structure 612.
  • the sacrificial gates 614A, 614B, and 614C are removed to provide trenches 626 and, thus, reveal channel portions of the nanowires. Portions of the intervening layer 606 exposed by the trenches 626 are removed to leave discrete portions of the germanium layers 604 and 608.
  • the silicon-containing layer 606 is etched selectively with a wet etch that selectively removes silicon while not etching the germanium nanowire structures 604 and 608.
  • portions of the buffer layer 610 may also be removed, e.g., prior to, following, or at the same time as removal of intervening layer 606.
  • the diffusion barrier layer 610 may be totally removed or only partially removed, e.g., leaving remnants under the spacers, or alternatively may be left in tact.
  • etch selectivity needed in the fabrication of Ge nanowire/nanoribbon devices is enhanced by using a lower germanium content in adjacent layers, e.g., through a galvanic coupling effect.
  • Such etch chemistries as aqueous hydroxide chemistries, including ammonium hydroxide and potassium hydroxide, for example, may be utilized to selectively etch the layers 606 and/or 610.
  • a surrounding gate electrode is formed around the germanium nanowires 604 and 608 and on the parasitic leakage barrier layer 650, as described above in association with Figure 5A.
  • the discrete portions of the germanium layers 604 and 608 will, in one embodiment, ultimately become channel regions in a nanowire-based structure.
  • channel engineering or tuning may be performed.
  • the discrete portions of the germanium layers 604 and 608 are thinned using oxidation and etch processes. Such an etch process may be performed at the same time the wires are separated or individualized. Accordingly, the initial wires formed from germanium layers 604 and 608 may begin thicker and are thinned to a size suitable for a channel region in a nanowire device, independent from the sizing of the source and drain regions of the device.
  • high-k gate dielectric and metal gate processing may be performed and source and drain contacts may be added be added. Contacts may be formed in the place of the interlayer dielectric layer 624 portions remaining in Figure 6D.
  • germanium active region arrangements substrate arrangements integrated with parasitic leakage barrier layers.
  • Such arrangements may be included to form germanium based transistors such as planar devices, fin or tri-gate based devices, and gate all around devices, including nanowire-based devices.
  • Embodiments described herein may be effective for junction isolation in metal-oxide- semiconductor field effect transistors (MOSFETs). It is to be understood that formation of materials such as first and second buffer layers 206 A/B, the layers of a parasitic leakage barrier stack 230, and the germanium active region 202 may be formed by techniques such as, but not limited to, chemical vapor deposition (CVD) or molecular beam epitaxy (MBE), or other like processes.
  • CVD chemical vapor deposition
  • MBE molecular beam epitaxy
  • FIG. 7 illustrates a computing device 700 in accordance with one implementation of the invention.
  • the computing device 700 houses a board 702.
  • the board 702 may include a number of components, including but not limited to a processor 704 and at least one communication chip 706.
  • the processor 704 is physically and electrically coupled to the board 702.
  • the at least one communication chip 706 is also physically and electrically coupled to the board 702.
  • the communication chip 706 is part of the processor 704.
  • computing device 700 may include other components that may or may not be physically and electrically coupled to the board 702. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).
  • volatile memory e.g., DRAM
  • non-volatile memory e.g., ROM
  • flash memory e.g., a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a
  • the communication chip 706 enables wireless communications for the transfer of data to and from the computing device 700.
  • wireless and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non- solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not.
  • the communication chip 706 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev- DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond.
  • the computing device 700 may include a plurality of communication chips 706. For instance, a first communication chip 706 may be dedicated to shorter range wireless
  • Wi-Fi and Bluetooth and a second communication chip 706 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.
  • the processor 704 of the computing device 700 includes an integrated circuit die packaged within the processor 704.
  • the integrated circuit die of the processor includes one or more devices, such as MOS-FET transistors built in accordance with implementations of the invention.
  • the term "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
  • the communication chip 706 also includes an integrated circuit die packaged within the communication chip 706.
  • the integrated circuit die of the communication chip includes one or more devices, such as MOS- FET transistors built in accordance with implementations of the invention.
  • another component housed within the computing device 700 may contain an integrated circuit die that includes one or more devices, such as MOS-FET transistors built in accordance with implementations of the invention.
  • the computing device 700 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder.
  • the computing device 700 may be any other electronic device that processes data.
  • embodiments of the present invention include semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers.
  • a planar semiconductor device includes a first buffer layer disposed above a substrate.
  • a parasitic leakage barrier is disposed above the first buffer layer.
  • a second buffer layer is disposed above the parasitic leakage barrier.
  • a germanium active layer is disposed above the second buffer layer.
  • a gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
  • the parasitic leakage barrier includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the germanium active layer.
  • the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
  • the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, the second buffer layer is disposed on the parasitic leakage barrier, the germanium active layer is disposed on the second buffer layer, and the gate electrode stack is disposed on the germanium active layer.
  • the substrate is composed essentially of silicon
  • the first buffer layer is composed of silicon germanium
  • the second buffer layer is composed of silicon germanium having a higher concentration of germanium than the first buffer layer
  • the germanium active layer is composed essentially of germanium
  • the parasitic leakage barrier includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the parasitic leakage barrier includes alternating first and second layer types.
  • the first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the second layer types is composed essentially the same material as the first buffer layer.
  • the first buffer layer is composed of approximately Sio .7 Geo .3
  • the second buffer layer is composed of approximately Sio .3 Geo.7
  • the first layer types is composed essentially of silicon and has a thickness approximately in the range of 1-3 nanometers.
  • the parasitic leakage barrier includes alternating first and second layer types.
  • the first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the second layer types is composed essentially the same material as the second buffer layer.
  • the source and drain regions are disposed in the germanium active layer and in the second buffer layer, but are not in contact with the parasitic leakage barrier.
  • a non-planar semiconductor device includes a first buffer layer disposed above a substrate.
  • a parasitic leakage barrier is disposed above the first buffer layer.
  • a second buffer layer is disposed above the parasitic leakage barrier.
  • a three-dimensional germanium active layer is disposed above the second buffer layer.
  • a gate electrode stack is disposed on and at least partially surrounds the three-dimensional germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
  • the gate electrode stack completely surrounds the three-dimensional germanium active layer, and the non-planar semiconductor device further includes a bottom gate insulating (BGI) structure disposed between the parasitic leakage barrier and a bottom portion of the gate electrode stack.
  • BGI bottom gate insulating
  • the parasitic leakage barrier includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the three-dimensional germanium active layer.
  • the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
  • the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, the second buffer layer is disposed on the parasitic leakage barrier, and at least a portion of the three-dimensional germanium active layer is disposed on the second buffer layer.
  • the substrate is composed essentially of silicon
  • the first buffer layer is composed of silicon germanium
  • the second buffer layer is composed of silicon germanium having a higher concentration of germanium than the first buffer layer
  • the three-dimensional germanium active layer is composed essentially of germanium.
  • the parasitic leakage barrier includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the parasitic leakage barrier includes alternating first and second layer types, the first layer types is composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers, and the second layer types is composed essentially the same material as the first buffer layer.
  • the first buffer layer is composed of approximately Sio .7 Geo .3
  • the second buffer layer is composed of approximately Sio .3 Geo.7
  • the first layer types is composed essentially of silicon and has a thickness approximately in the range of 1-3 nanometers.
  • the parasitic leakage barrier includes alternating first and second layer types, the first layer types is composed essentially of silicon or of silicon germanium has a lower concentration of germanium than the first or second buffer layers, and the second layer types is composed essentially of the same material as the second buffer layer.
  • a semiconductor device in an embodiment, includes a vertical arrangement of one or more germanium nanowires disposed above a substrate.
  • a first buffer layer is disposed above the substrate.
  • a parasitic leakage barrier is disposed above the first buffer layer.
  • a second buffer layer is disposed above the parasitic leakage barrier.
  • the bottom-most germanium nanowire is disposed above the second buffer layer.
  • a gate electrode stack is disposed on and at least partially surrounds the bottom-most germanium nanowire, and is disposed on and completely surrounds the remaining germanium nanowires. Source and drain regions are disposed in each germanium nanowire, on either side of the gate electrode stack.
  • the gate electrode stack completely surrounds the bottom-most germanium nanowire, and the semiconductor device further includes a bottom gate insulating (BGI) structure disposed between the parasitic leakage barrier and a bottom portion of the gate electrode stack.
  • BGI bottom gate insulating
  • the parasitic leakage barrier includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the germanium nanowires.
  • the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
  • the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, and the second buffer layer is disposed on the parasitic leakage barrier.
  • the substrate is composed essentially of silicon
  • the first buffer layer is composed of silicon germanium
  • the second buffer layer is composed of silicon germanium having a higher concentration of germanium than the first buffer layer
  • the germanium nanowires are composed essentially of germanium.
  • the parasitic leakage barrier includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the parasitic leakage barrier includes alternating first and second layer types.
  • the first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the second layer types is composed essentially the same material as the first buffer layer.
  • the first buffer layer is composed of approximately Sio .7 Geo .3
  • the second buffer layer is composed of approximately Sio .3 Ge 0 .7
  • the first layer types is composed essentially of silicon and has a thickness approximately in the range of 1-3 nanometers.
  • the parasitic leakage barrier includes alternating first and second layer types.
  • the first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
  • the second layer types are composed of essentially the same material as the second buffer layer.

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Abstract

Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.

Description

SEMICONDUCTOR DEVICE HAVING GERMANIUM ACTIVE LAYER WITH UNDERLYING PARASITIC LEAKAGE BARRIER LAYER
TECHNICAL FIELD
Embodiments of the invention are in the field of semiconductor devices and, in particular, semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers.
BACKGROUND
For the past several decades, the scaling of features in integrated circuits has been a driving force behind an ever-growing semiconductor industry. Scaling to smaller and smaller features enables increased densities of functional units on the limited real estate of semiconductor chips. For example, shrinking transistor size allows for the incorporation of an increased number of memory devices on a chip, leading to the fabrication of products with increased capacity. The drive for ever-more capacity, however, is not without issue. The necessity to optimize the performance of each device becomes increasingly significant.
In the manufacture of integrated circuit devices, multi-gate transistors, such as tri-gate transistors, have become more prevalent as device dimensions continue to scale down. In conventional processes, tri-gate transistors are generally fabricated on either bulk silicon substrates or silicon-on-insulator substrates. In some instances, bulk silicon substrates are preferred due to their lower cost and because they enable a less complicated tri-gate fabrication process. In other instances, silicon-on-insulator substrates are preferred because of the reduced leakage they can offer.
On bulk silicon substrates, the fabrication process for tri-gate transistors often encounters problems when aligning the bottom of the metal gate electrode with the source and drain extension tips at the bottom of the transistor body (i.e., the "fin"). When the tri-gate transistor is formed on a bulk substrate, proper alignment is needed for optimal gate control and to reduce short-channel effects. For instance, if the source and drain extension tips are deeper than the metal gate electrode, punch-through may occur. Alternately, if the metal gate electrode is deeper than the source and drain extension tips, the result may be an unwanted gate capacitance parasitics.
Many different techniques have been attempted to reduce junction leakage of transistors. However, significant improvements are still needed in the area of junction leakage suppression. BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 illustrates a cross-sectional view of a conventional semiconductor device.
Figure 2 illustrates a cross-sectional view of a semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Figure 3 illustrates a cross-sectional view of a planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Figure 4 illustrates an angled view of a non-planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Figure 5A illustrates a three-dimensional cross-sectional view of a nanowire-based semiconductor structure, in accordance with an embodiment of the present invention.
Figure 5B illustrates a cross-sectional channel view of the nanowire-based semiconductor structure of Figure 5A, as taken along the a-a' axis, in accordance with an embodiment of the present invention.
Figure 5C illustrates a cross-sectional spacer view of the nanowire-based semiconductor structure of Figure 5A, as taken along the b-b' axis, in accordance with an embodiment of the present invention.
Figures 6A-6D illustrate three-dimensional cross-sectional views representing various operations in a method of fabricating a nanowire semiconductor device having a vertical arrangement of germanium nanowires and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Figure 7 illustrates a computing device in accordance with one implementation of the invention.
DESCRIPTION OF THE EMBODIMENTS
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. In the following description, numerous specific details are set forth, such as specific integration and material regimes, in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the present invention may be practiced without these specific details. In other instances, well-known features, such as integrated circuit design layouts, are not described in detail in order to not unnecessarily obscure embodiments of the present invention. Furthermore, it is to be understood that the various embodiments shown in the Figures are illustrative representations and are not necessarily drawn to scale.
One or more embodiments described below are directed to approaches, and the resulting structures, to reducing parasitic leakage in germanium active layer devices. For example, one or more embodiments may be particularly effective for improving performance in germanium-based nanowire or gate-all-around devices.
To exemplify the concepts described herein, Figure 1 illustrates a cross-sectional view of a conventional semiconductor device. Referring to Figure 1, a conventional device 100 includes a germanium (Ge) channel region 102 grown above a silicon (Si) substrate 104 (e.g., as a portion of a silicon wafer) via relaxed silicon germanium (SiGe) buffer layers 106 (e.g., 70% SiGe buffer, which grades to 50% SiGe and ultimately to the essentially pure Ge channel region 102) to manage lattice mismatch between Ge and Si. These SiGe buffer layers 106 are, however, fairly conductive in that they allow parallel conduction within the region underlying the channel region 102, at least within the SiGe buffer layers 106. The parallel conduction may cause parasitic leakage in the device 100, as depicted by arrow 108, from the source region 110 to the drain region 112. It is noted that Figure 1 also depicts isolation regions 114 and a gate electrode stack 116, such as a titanium nitride (TiN) gate 116B and high-k gate dielectric 116A electrode stack 116. It is to be understood that such leakage may occur even in the case of a wrap-around or nanowire arrangement, where a bottom gate electrode stack 116' disposed on a bottom gate insulator (BGI) structure 120 is included.
In addition to, or in conjunction with, parasitic leakage 108, poor interfaces formed between the isolation regions 114 and the germanium-based buffer layers may generate significant surface states causing or contributing to the parasitic leakage. Regardless of how generated, parasitic leakage 108 can hamper transistor performance since it may degrade the off state leakage of the device. Ultimately, such parasitic leakage can render fabricating a low leakage germanium-based semiconductor device difficult to achieve.
In order to address the above described issues, in an embodiment, a parasitic leakage barrier layer is integrated with a germanium-based semiconductor device. As an example, Figure 2 illustrates a cross-sectional view of a semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Referring to Figure 2, a semiconductor device 200 includes a germanium (Ge) channel region 202 grown on a silicon (Si) substrate 204 (e.g., as a portion of a silicon wafer) via silicon germanium (SiGe) buffer layers 206A and 206B (e.g., 70% SiGe buffer 206A, which grades to 50% SiGe 206B and ultimately to the essentially pure Ge channel region 202) to manage lattice mismatch between Ge and Si. A parasitic leakage barrier 230 is disposed between the buffer layers 206A and 206B. Semiconductor device 200 may also include isolation regions 214 and a gate electrode stack 216, such as a titanium nitride (TiN) gate 216B and high-k gate dielectric 216A electrode stack 216. A wrap-around or nanowire arrangement may be formed, where a bottom gate electrode stack 216' disposed on a bottom gate insulator (BGI) structure 220 is included. Source and drain regions 210 and 212, respectively, are included on either side of gate electrode stack 216, as is also depicted in Figure 2. In an embodiment, the parasitic leakage barrier 230 blocks a leakage path 208 from source region 210 to drain region 212, which was not blocked in device 100 of Figure 1.
As used throughout, the terms pure or essentially pure germanium may be used to describe a germanium material composed of a very substantial amount of, if not all, germanium.
However, it is to be understood that, practically, 100% pure Ge may be difficult to form and, hence, could include a tiny percentage of Si. The Si may be included as an unavoidable impurity or component during deposition of Ge or may "contaminate" the Ge upon diffusion during post deposition processing. As such, embodiments described herein directed to a Ge channel may include Ge channels that contain a relatively small amount, e.g., "impurity" level, non-Ge atoms or species, such as Si.
In an embodiment, the parasitic leakage barrier 230 includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer 206A, greater than a band-gap of the second buffer layer 206B, and greater than a band-gap of the germanium active layer 202. In that way, low leakage pathways are blocked by the higher band-gap semiconductor layer. In an embodiment, however, the parasitic leakage barrier 230 does not disrupt an effective lattice constant of the first buffer layer 206A. In that way, e.g., the grading from a silicon substrate to a germanium active region is maintained without interrupting or causing defects in the transition from substrate 204 to active region 202. Thus, in one embodiment, a higher band-gap material such as silicon is formed to a thickness sufficiently thin to not alter the lattice constant of the buffer layer 206.
In an exemplary embodiment, the substrate 204 is composed essentially of silicon, the first buffer layer 206A is composed of silicon germanium, the second buffer layer 206B is composed of silicon germanium having a higher concentration of germanium than the first buffer layer (e.g., 50% Ge versus 30% Ge), and the germanium active layer 202 is composed essentially of germanium. In one such embodiment, the parasitic leakage barrier 230 includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers (e.g., approximately 10% Ge). In another such embodiment, the parasitic leakage barrier 230 includes alternating first and second layer types 230A and 230B, an example layering structure of which is depicted in Figure 2. The first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers. The second layer types are composed essentially of the same material as the first buffer layer 206A. In a specific such embodiment, the first buffer layer 206A is composed approximately of Sio.7Geoj, the second buffer layer is composed approximately of Sio.3Geo.7, and the first layer types 203A are composed essentially of silicon and have a thickness approximately in the range of 1-3 nanometers. The number of each layer may vary as may the identity of the first and last layers (i.e., first or second layer type). In an exemplary embodiment, approximately 3-5 alternating pairs 230A and 230B make up the parasitic leakage barrier 230. In an alternative embodiment, the second layer types are composed essentially of the same material as the second buffer layer.
In an embodiment, the source and drain regions 210/212 are disposed in the germanium active layer 202 and in the second buffer layer 206B, but are not in contact with the parasitic leakage barrier 230, as depicted in Figure 2. Figure 2 is shown generically to represent a variety of options. In a first embodiment, the source and drain regions are formed by doping portions of the germanium active layer 202 and in the second buffer layer 206B, as described in greater detail in association with Figure 3. In a second embodiment, portions of the germanium active layer 202 and in the second buffer layer 206B and a different semiconductor material is grown to form the source and drain regions 210/212.
Substrate 204 may be composed of a semiconductor material that can withstand a manufacturing process and in which charge can migrate. In an embodiment, the substrate 204 is a bulk substrate, such as a P-type silicon substrate as is commonly used in the semiconductor industry. In an embodiment, substrate 204 is composed of a crystalline silicon,
silicon/germanium or germanium layer doped with a charge carrier, such as but not limited to phosphorus, arsenic, boron or a combination thereof. In one embodiment, the concentration of silicon atoms in substrate 204 is greater than 97% or, alternatively, the concentration of dopant atoms is less than 1%. In another embodiment, substrate 204 is composed of an epitaxial layer grown atop a distinct crystalline substrate, e.g. a silicon epitaxial layer grown atop a boron-doped bulk silicon mono-crystalline substrate.
Substrate 204 may instead include an insulating layer disposed in between a bulk crystal substrate and an epitaxial layer to form, for example, a silicon-on-insulator substrate. In an embodiment, the insulating layer is composed of a material such as, but not limited to, silicon dioxide, silicon nitride, silicon oxy-nitride or a high-k dielectric layer. Substrate 204 may alternatively be composed of a group ΙΠ-V material. In an embodiment, substrate 204 is composed of a ΠΙ-V material such as, but not limited to, gallium nitride, gallium phosphide, gallium arsenide, indium phosphide, indium antimonide, indium gallium arsenide, aluminum gallium arsenide, indium gallium phosphide, or a combination thereof. In another embodiment, substrate 204 is composed of a ΙΠ-V material and charge-carrier dopant impurity atoms such as, but not limited to, carbon, silicon, germanium, oxygen, sulfur, selenium or tellurium.
In an embodiment, the gate electrode of gate electrode stack 216 is composed of a metal gate and the gate dielectric layer is composed of a high-K material. For example, in one embodiment, the gate dielectric layer is composed of a material such as, but not limited to, hafnium oxide, hafnium oxy-nitride, hafnium silicate, lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide, barium strontium titanate, barium titanate, strontium titanate, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, or a combination thereof. Furthermore, a portion of gate dielectric layer may include a layer of native oxide formed from the top few layers of the germanium active layer 202. In an embodiment, the gate dielectric layer is composed of a top high-k portion and a lower portion composed of an oxide of a semiconductor material. In one embodiment, the gate dielectric layer is composed of a top portion of hafnium oxide and a bottom portion of silicon dioxide or silicon oxy-nitride.
In an embodiment, the gate electrode is composed of a metal layer such as, but not limited to, metal nitrides, metal carbides, metal silicides, metal aluminides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt, nickel or conductive metal oxides. In a specific embodiment, the gate electrode is composed of a non-workfunction- setting fill material formed above a metal workfunction-setting layer. In an embodiment, the gate electrode is composed of a P-type or N-type material. The gate electrode stack 216 may also include dielectric spacers, not depicted.
The semiconductor device 200 is shown generically to cover both planar and non-planar devices, including gate-all-around devices. Such devices are described more specifically below with Figure 3 (planar device), Figure 4 (non-planar device) and Figure 5 (nanowire-based device). In all cases, a parasitic leakage barrier is integrated with the device. The parasitic leakage barrier may be effective for suppressing the leakage in such devices. Thus,
semiconductor device 200 may be a semiconductor device incorporating a gate, a channel region and a pair of source/drain regions. In an embodiment, semiconductor device 200 is one such as, but not limited to, a MOS-FET or a Microelectromechanical System (MEMS). In one embodiment, semiconductor device 200 is a planar or three-dimensional MOS-FET and is an isolated device or is one device in a plurality of nested devices. As will be appreciated for a typical integrated circuit, both N- and P-channel transistors may be fabricated on a single substrate to form a CMOS integrated circuit. Furthermore, additional interconnect wiring may be fabricated in order to integrate such devices into an integrated circuit.
As an example, Figure 3 illustrates a cross-sectional view of a planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention. In one such embodiment, the semiconductor device is a planar device having a gate electrode stack disposed on only a single surface of a germanium active layer. Referring to Figure 3, a planar semiconductor device 300 includes a first buffer layer 206A disposed above a substrate 204. A parasitic leakage barrier 230 is disposed above the first buffer layer 206A. A second buffer layer 206B is disposed above the parasitic leakage barrier 230. A germanium active layer 202 is disposed above the second buffer layer 206B. A gate electrode stack 216 is disposed above the germanium active layer 202. Source and drain regions 210/212 are disposed above the parasitic leakage barrier 230, on either side of the gate electrode stack 216. More specifically, in an embodiment, the source and drain regions 210/212 are formed by doping portions of the germanium active layer 202 and in the second buffer layer 206B, as depicted in Figure 3. In an embodiment, the first buffer layer 206A is disposed on the substrate 204, the parasitic leakage barrier 230 is disposed on the first buffer layer 206A, the second buffer layer 206B is disposed on the parasitic leakage barrier 230, the germanium active layer 202 is disposed on the second buffer layer 206B, and the gate electrode stack 216 is disposed on the germanium active layer 202, as is also depicted in Figure 3.
As depicted in Figure 3, semiconductor device 300 may also include isolation regions 214. Although depicted as being somewhat aligned with the bottom of the parasitic leakage barrier 230, it is to be understood that the depth of the isolation regions 214 may vary. It is also to be understood that like feature designations of Figure 3 may be as described in association with Figure 2.
As mentioned above, embodiments of the present invention may be applied to non-planar MOS-FETs. For example, devices with a three-dimensional architecture, such as tri-gate devices, may benefit from the above described process. Figure 4 illustrates an angled view of a non-planar semiconductor device having a germanium active layer and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Referring to Figure 4, a non-planar semiconductor device 400 includes a first buffer layer 206A disposed above a substrate 204. A parasitic leakage barrier 230 is disposed above the first buffer layer 206A. A second buffer layer 206B is disposed above the parasitic leakage barrier 230. A three-dimensional germanium active layer 202 is disposed above the second buffer layer 206B. A gate electrode stack 216 is disposed on and at least partially surrounds the three- dimensional germanium active layer 202. Source and drain regions 210/212 are disposed above the parasitic leakage barrier 230, on either side of the gate electrode stack 216. Also depicted are isolation regions 214 and gate electrode spacers 440.
Although not depicted in the view shown in Figure 4, but is shown as an option in Figure 2, in one embodiment, the gate electrode stack 216 completely surrounds the three-dimensional germanium active layer 202. In that embodiment, and the non-planar semiconductor device 400 further includes a bottom gate insulating (BGI) structure (220 in Figure 2) disposed between the parasitic leakage barrier 230 and a bottom portion of the gate electrode stack (216' in Figure 2). In another embodiment, however, the gate electrode 216 only surrounds the three-dimensional germanium active layer 202 on the exposed top and sides of the three-dimensional germanium active layer 202.
Although depicted in Figure 4 as being somewhat aligned with the bottom of the first buffer layer 206 A, it is to be understood that the depth of the isolation regions 214 may vary. Also, although depicted in Figure 4 as being somewhat aligned with the top of the second buffer layer 206B, it is to be understood that the height of the isolation regions 214 may vary. It is also to be understood that like feature designations of Figure 4 may be as described in association with Figure 2.
In another aspect, Figure 5A illustrates a three-dimensional cross-sectional view of a germanium nanowire-based semiconductor structure, in accordance with an embodiment of the present invention. Figure 5B illustrates a cross-sectional channel view of the germanium nanowire-based semiconductor structure of Figure 5A, as taken along the a-a' axis. Figure 5C illustrates a cross-sectional spacer view of the germanium nanowire-based semiconductor structure of Figure 5 A, as taken along the b-b' axis.
Referring to Figure 5A, a semiconductor device 500 includes one or more vertically stacked germanium nanowires (550 set) disposed above a substrate 204. Embodiments herein are targeted at both single wire devices and multiple wire devices. As an example, a three nanowire-based devices having nanowires 550A, 550B and 550C is shown for illustrative purposes. For convenience of description, nanowire 550A is used as an example where description is focused on only one of the nanowires. It is to be understood that where attributes of one nanowire are described, embodiments based on a plurality of nanowires may have the same attributes for each of the nanowires.
At least the first nanowire 550A includes a germanium channel region 202. The germanium channel region 202 has a length (L). Referring to Figure 5B, the germanium channel region 202 also has a perimeter orthogonal to the length (L). Referring to both Figures 5A and 5B, a gate electrode stack 216 surrounds the entire perimeter of each of the channel regions of each nanowire 550, including germanium channel region 202. The gate electrode stack 216 includes a gate electrode along with a gate dielectric layer disposed between the channel regions and the gate electrode (not individually shown). The germanium channel region 202 and the channel regions of the additional nanowires 550B and 550C are discrete in that they are completely surrounded by the gate electrode stack 216 without any intervening material such as underlying substrate material or overlying channel fabrication materials. Accordingly, in embodiments having a plurality of nanowires 5550, the channel regions of the nanowires are also discrete relative to one another, as depicted in Figure 5B.
Referring to Figures 5A-5C, parasitic leakage barrier 230 is disposed above a first buffer layer 206A which is disposed above the substrate 204. The parasitic leakage barrier 230 is further disposed below the one or more nanowires 550. In an embodiment, the germanium channel region 202 is completely surrounded by gate electrode 216 and a bottom gate insulation (BGI) layer 220 is disposed between the parasitic leakage barrier 230 and a bottom portion of the gate electrode stack 216.
Referring again to Figure 5A, each of the nanowires 550 also includes source and drain regions 210 and 212 disposed in the nanowire on either side of the channel regions, including on either side of germanium channel region 202. The source and drain regions 210/212 are disposed either on or above (with an intervening second buffer layer portion 206B, not depicted) the parasitic leakage barrier 230. In an embodiment, the source and drain regions 210/212 are embedded source and drain regions, e.g., at least a portion of the nanowires is removed and replaced with a source/drain material region. However, in another embodiment, the source and drain regions 210/212 are composed of portions of the one or more germanium nanowires 550.
A pair of contacts 570 is disposed over the source/drain regions 210/212. In an
embodiment, the semiconductor device 500 further includes a pair of spacers 540. The spacers 540 are disposed between the gate electrode stack 216 and the pair of contacts 570. As described above, the channel regions and the source/drain regions are, in at least several embodiments, made to be discrete. However, not all regions of the nanowires 550 need be, or even can be made to be discrete. For example, referring to Figure 5C, nanowires 550A-550C are not discrete at the location under spacers 540. In one embodiment, the stack of nanowires 550A-550C have intervening semiconductor material 580 there between, such as silicon germanium or silicon intervening between germanium nanowires. In one embodiment, the bottom nanowire 550A is still in contact with a portion of a second buffer layer 206B. Thus, in an embodiment, a portion of the plurality of vertically stacked nanowires 550 under one or both of the spacers 540 is non- discrete.
It is to be understood that like feature designations of Figure 5A-5C may be as described in association with Figure 2. Also, although the device 500 described above is for a single device, a CMOS architecture may also be formed to include both NMOS and PMOS nanowire-based devices disposed on or above the same substrate. In an embodiment, the nanowires 550 may be sized as wires or ribbons, and may have squared-off or rounded corners.
In another aspect, methods of fabricating a nanowire semiconductor structure are provided. For example, Figures 6A-6D illustrate three-dimensional cross-sectional views representing various operations in a method of fabricating a nanowire semiconductor device having a vertical arrangement of germanium nanowires and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Figures 6A-6D illustrate three-dimensional cross-sectional views representing various operations in a method of fabricating a nanowire semiconductor device having a vertical arrangement of germanium nanowires and an underlying parasitic leakage barrier layer, in accordance with an embodiment of the present invention.
Referring to Figure 6A, a fin 612 is formed above a substrate 602. The fin includes germanium wire-forming layers 604 and 608 and an intervening material layer 606, such as a silicon or silicon germanium layer. The fin also includes a patterned portion of a buffer layer 610, such as the second buffer layers described above. The fin is disposed on a parasitic leakage barrier layer 650. Although not depicted, in an embodiment, a grading stack is disposed directly between the substrate 602 and the parasitic leakage barrier layer 650.
In a specific example showing the formation of three gate structures, Figure 6B illustrates the fin-type structure 612 with three sacrificial gates 614A, 614B, and 614C disposed thereon. In one such embodiment, the three sacrificial gates 614A, 614B, and 614C are composed of a sacrificial gate oxide layer 616 and a sacrificial polysilicon gate layer 618 which are, e.g., blanket deposited and patterned with a plasma etch process.
Following patterning to form the three sacrificial gates 614A, 614B, and 614C, spacers may be formed on the sidewalls of the three sacrificial gates 614A, 614B, and 614C, doping may be performed in regions 620 of the fin-type structure 612 shown in Figure 6B (e.g., tip and/or source and drain type doping), and an interlayer dielectric layer may be formed to cover and then re-expose the three sacrificial gates 614A, 614B, and 614C. The interlayer dielectric layer may then be polished to expose the three sacrificial gates 614A, 614B, and 614C for a replacement gate, or gate-last, process. Referring to Figure 6C, the three sacrificial gates 614A, 614B, and 614C are exposed, along with spacers 622 and interlayer dielectric layer 624.
The sacrificial gates 614A, 614B, and 614C may then be removed, e.g., in a replacement gate or gate-last process flow, to expose channel portions of the fin-type structure 612. Referring to Figure 6D, the sacrificial gates 614A, 614B, and 614C are removed to provide trenches 626 and, thus, reveal channel portions of the nanowires. Portions of the intervening layer 606 exposed by the trenches 626 are removed to leave discrete portions of the germanium layers 604 and 608.
In an embodiment, the silicon-containing layer 606 is etched selectively with a wet etch that selectively removes silicon while not etching the germanium nanowire structures 604 and 608. In an embodiment, although not shown, portions of the buffer layer 610 may also be removed, e.g., prior to, following, or at the same time as removal of intervening layer 606. Also, the diffusion barrier layer 610 may be totally removed or only partially removed, e.g., leaving remnants under the spacers, or alternatively may be left in tact. In one embodiment, etch selectivity needed in the fabrication of Ge nanowire/nanoribbon devices is enhanced by using a lower germanium content in adjacent layers, e.g., through a galvanic coupling effect. Such etch chemistries as aqueous hydroxide chemistries, including ammonium hydroxide and potassium hydroxide, for example, may be utilized to selectively etch the layers 606 and/or 610.
Subsequently device fabrication may be completed. In one embodiment, a surrounding gate electrode is formed around the germanium nanowires 604 and 608 and on the parasitic leakage barrier layer 650, as described above in association with Figure 5A.
Thus, the discrete portions of the germanium layers 604 and 608 will, in one embodiment, ultimately become channel regions in a nanowire-based structure. Thus, at the process stage depicted in Figure 6D, channel engineering or tuning may be performed. For example, in one embodiment, the discrete portions of the germanium layers 604 and 608 are thinned using oxidation and etch processes. Such an etch process may be performed at the same time the wires are separated or individualized. Accordingly, the initial wires formed from germanium layers 604 and 608 may begin thicker and are thinned to a size suitable for a channel region in a nanowire device, independent from the sizing of the source and drain regions of the device.
Following formation of the discrete channel regions as depicted in Figure 6D, high-k gate dielectric and metal gate processing may be performed and source and drain contacts may be added be added. Contacts may be formed in the place of the interlayer dielectric layer 624 portions remaining in Figure 6D.
Thus, one or more embodiments described herein are targeted at germanium active region arrangements substrate arrangements integrated with parasitic leakage barrier layers. Such arrangements may be included to form germanium based transistors such as planar devices, fin or tri-gate based devices, and gate all around devices, including nanowire-based devices.
Embodiments described herein may be effective for junction isolation in metal-oxide- semiconductor field effect transistors (MOSFETs). It is to be understood that formation of materials such as first and second buffer layers 206 A/B, the layers of a parasitic leakage barrier stack 230, and the germanium active region 202 may be formed by techniques such as, but not limited to, chemical vapor deposition (CVD) or molecular beam epitaxy (MBE), or other like processes.
Figure 7 illustrates a computing device 700 in accordance with one implementation of the invention. The computing device 700 houses a board 702. The board 702 may include a number of components, including but not limited to a processor 704 and at least one communication chip 706. The processor 704 is physically and electrically coupled to the board 702. In some implementations the at least one communication chip 706 is also physically and electrically coupled to the board 702. In further implementations, the communication chip 706 is part of the processor 704.
Depending on its applications, computing device 700 may include other components that may or may not be physically and electrically coupled to the board 702. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a battery, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).
The communication chip 706 enables wireless communications for the transfer of data to and from the computing device 700. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non- solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip 706 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev- DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing device 700 may include a plurality of communication chips 706. For instance, a first communication chip 706 may be dedicated to shorter range wireless
communications such as Wi-Fi and Bluetooth and a second communication chip 706 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.
The processor 704 of the computing device 700 includes an integrated circuit die packaged within the processor 704. In some implementations of the invention, the integrated circuit die of the processor includes one or more devices, such as MOS-FET transistors built in accordance with implementations of the invention. The term "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
The communication chip 706 also includes an integrated circuit die packaged within the communication chip 706. In accordance with another implementation of the invention, the integrated circuit die of the communication chip includes one or more devices, such as MOS- FET transistors built in accordance with implementations of the invention.
In further implementations, another component housed within the computing device 700 may contain an integrated circuit die that includes one or more devices, such as MOS-FET transistors built in accordance with implementations of the invention.
In various implementations, the computing device 700 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device 700 may be any other electronic device that processes data.
Thus, embodiments of the present invention include semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers.
In an embodiment, a planar semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
In one embodiment, the parasitic leakage barrier includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the germanium active layer.
In one embodiment, the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
In one embodiment, the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, the second buffer layer is disposed on the parasitic leakage barrier, the germanium active layer is disposed on the second buffer layer, and the gate electrode stack is disposed on the germanium active layer.
In one embodiment, the substrate is composed essentially of silicon, the first buffer layer is composed of silicon germanium, the second buffer layer is composed of silicon germanium having a higher concentration of germanium than the first buffer layer, and the germanium active layer is composed essentially of germanium.
In one embodiment, the parasitic leakage barrier includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
In one embodiment, the parasitic leakage barrier includes alternating first and second layer types. The first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers. The second layer types is composed essentially the same material as the first buffer layer.
In one embodiment, the first buffer layer is composed of approximately Sio.7Geo.3, the second buffer layer is composed of approximately Sio.3Geo.7, and the first layer types is composed essentially of silicon and has a thickness approximately in the range of 1-3 nanometers.
In one embodiment, the parasitic leakage barrier includes alternating first and second layer types. The first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers. The second layer types is composed essentially the same material as the second buffer layer.
In one embodiment, the source and drain regions are disposed in the germanium active layer and in the second buffer layer, but are not in contact with the parasitic leakage barrier.
In an embodiment, a non-planar semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A three-dimensional germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed on and at least partially surrounds the three-dimensional germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
In one embodiment, the gate electrode stack completely surrounds the three-dimensional germanium active layer, and the non-planar semiconductor device further includes a bottom gate insulating (BGI) structure disposed between the parasitic leakage barrier and a bottom portion of the gate electrode stack.
In one embodiment, the parasitic leakage barrier includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the three-dimensional germanium active layer.
In one embodiment, the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
In one embodiment, the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, the second buffer layer is disposed on the parasitic leakage barrier, and at least a portion of the three-dimensional germanium active layer is disposed on the second buffer layer.
In one embodiment, the substrate is composed essentially of silicon, the first buffer layer is composed of silicon germanium, the second buffer layer is composed of silicon germanium having a higher concentration of germanium than the first buffer layer, and the three-dimensional germanium active layer is composed essentially of germanium. In one embodiment, the parasitic leakage barrier includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
In one embodiment, the parasitic leakage barrier includes alternating first and second layer types, the first layer types is composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers, and the second layer types is composed essentially the same material as the first buffer layer.
In one embodiment, the first buffer layer is composed of approximately Sio.7Geo.3, the second buffer layer is composed of approximately Sio.3Geo.7, and the first layer types is composed essentially of silicon and has a thickness approximately in the range of 1-3 nanometers.
In one embodiment, the parasitic leakage barrier includes alternating first and second layer types, the first layer types is composed essentially of silicon or of silicon germanium has a lower concentration of germanium than the first or second buffer layers, and the second layer types is composed essentially of the same material as the second buffer layer.
In an embodiment, a semiconductor device includes a vertical arrangement of one or more germanium nanowires disposed above a substrate. A first buffer layer is disposed above the substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. The bottom-most germanium nanowire is disposed above the second buffer layer. A gate electrode stack is disposed on and at least partially surrounds the bottom-most germanium nanowire, and is disposed on and completely surrounds the remaining germanium nanowires. Source and drain regions are disposed in each germanium nanowire, on either side of the gate electrode stack.
In one embodiment, the gate electrode stack completely surrounds the bottom-most germanium nanowire, and the semiconductor device further includes a bottom gate insulating (BGI) structure disposed between the parasitic leakage barrier and a bottom portion of the gate electrode stack.
In one embodiment, the parasitic leakage barrier includes a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the germanium nanowires.
In one embodiment, the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
In one embodiment, the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, and the second buffer layer is disposed on the parasitic leakage barrier.
In one embodiment, the substrate is composed essentially of silicon, the first buffer layer is composed of silicon germanium, the second buffer layer is composed of silicon germanium having a higher concentration of germanium than the first buffer layer, and the germanium nanowires are composed essentially of germanium.
In one embodiment, the parasitic leakage barrier includes a layer composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
In one embodiment, the parasitic leakage barrier includes alternating first and second layer types. The first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers. The second layer types is composed essentially the same material as the first buffer layer.
In one embodiment, the first buffer layer is composed of approximately Sio.7Geo.3, the second buffer layer is composed of approximately Sio.3Ge0.7, and the first layer types is composed essentially of silicon and has a thickness approximately in the range of 1-3 nanometers.
In one embodiment, the parasitic leakage barrier includes alternating first and second layer types. The first layer types are composed essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers. The second layer types are composed of essentially the same material as the second buffer layer.

Claims

CLAIMS What is claimed is:
1. A planar semiconductor device, comprising:
a first buffer layer disposed above a substrate;
a parasitic leakage barrier disposed above the first buffer layer;
a second buffer layer disposed above the parasitic leakage barrier;
a germanium active layer disposed above the second buffer layer;
a gate electrode stack disposed above the germanium active layer; and
source and drain regions disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
2. The planar semiconductor device of claim 1, wherein the parasitic leakage barrier comprises a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the germanium active layer.
3. The planar semiconductor device of claim 1, wherein the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
4. The planar semiconductor device of claim 1, wherein the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, the second buffer layer is disposed on the parasitic leakage barrier, the germanium active layer is disposed on the second buffer layer, and the gate electrode stack is disposed on the germanium active layer.
5. The planar semiconductor device of claim 4, wherein the substrate consists essentially of silicon, the first buffer layer comprises silicon germanium, the second buffer layer comprises silicon germanium having a higher concentration of germanium than the first buffer layer, and the germanium active layer consists essentially of germanium.
6. The planar semiconductor device of claim 5, wherein the parasitic leakage barrier comprises a layer consisting essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
7. The planar semiconductor device of claim 5, wherein the parasitic leakage barrier comprises alternating first and second layer types, the first layer types consisting essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers, and the second layer types comprising essentially the same material as the first buffer layer.
8. A non-planar semiconductor device, comprising:
a first buffer layer disposed above a substrate;
a parasitic leakage barrier disposed above the first buffer layer;
a second buffer layer disposed above the parasitic leakage barrier;
a three-dimensional germanium active layer disposed above the second buffer layer;
a gate electrode stack disposed on and at least partially surrounding the three-dimensional germanium active layer; and
source and drain regions disposed above the parasitic leakage barrier, on either side of the gate electrode stack.
9. The non-planar semiconductor device of claim 8, wherein the gate electrode stack completely surrounds the three-dimensional germanium active layer, the non-planar semiconductor device further comprising:
a bottom gate insulating (BGI) structure disposed between the parasitic leakage barrier and a bottom portion of the gate electrode stack.
10. The non-planar semiconductor device of claim 8, wherein the parasitic leakage barrier comprises a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the three- dimensional germanium active layer.
11. The non-planar semiconductor device of claim 8, wherein the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
12. The non-planar semiconductor device of claim 8, wherein the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, the second buffer layer is disposed on the parasitic leakage barrier, and at least a portion of the three- dimensional germanium active layer is disposed on the second buffer layer.
13. The non-planar semiconductor device of claim 12, wherein the substrate consists essentially of silicon, the first buffer layer comprises silicon germanium, the second buffer layer comprises silicon germanium having a higher concentration of germanium than the first buffer layer, and the three-dimensional germanium active layer consists essentially of germanium.
14. The non-planar semiconductor device of claim 13, wherein the parasitic leakage barrier comprises a layer consisting essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers.
15. The non-planar semiconductor device of claim 13, wherein the parasitic leakage barrier comprises alternating first and second layer types, the first layer types consisting essentially of silicon or of silicon germanium having a lower concentration of germanium than the first or second buffer layers, and the second layer types comprising essentially the same material as the first buffer layer.
16. A semiconductor device, comprising:
a vertical arrangement of one or more germanium nanowires disposed above a substrate; a first buffer layer disposed above the substrate;
a parasitic leakage barrier disposed above the first buffer layer;
a second buffer layer disposed above the parasitic leakage barrier, wherein the bottom-most germanium nanowire is disposed above the second buffer layer;
a gate electrode stack disposed on and at least partially surrounding the bottom-most
germanium nanowire, and disposed on and completely surrounding the remaining germanium nanowires; and
source and drain regions disposed in each germanium nanowire, on either side of the gate electrode stack.
17. The semiconductor device of claim 16, wherein the gate electrode stack completely surrounds the bottom-most germanium nanowire, the semiconductor device further comprising: a bottom gate insulating (BGI) structure disposed between the parasitic leakage barrier and a bottom portion of the gate electrode stack.
18. The semiconductor device of claim 16, wherein the parasitic leakage barrier comprises a semiconductor layer having a band-gap greater than a band-gap of the first buffer layer, greater than a band-gap of the second buffer layer, and greater than a band-gap of the germanium nanowires.
19. The semiconductor device of claim 16, wherein the parasitic leakage barrier does not disrupt an effective lattice constant of the first buffer layer.
20. The semiconductor device of claim 16, wherein the first buffer layer is disposed on the substrate, the parasitic leakage barrier is disposed on the first buffer layer, and the second buffer layer is disposed on the parasitic leakage barrier.
PCT/US2013/047430 2012-09-27 2013-06-24 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer WO2014051773A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3072158A1 (en) * 2013-11-22 2016-09-28 Atomera Incorporated Vertical semiconductor devices including superlattice punch through stop layer and related methods
TWI569439B (en) * 2015-03-31 2017-02-01 晶元光電股份有限公司 Semiconductor cell

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136343B2 (en) 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
US8872161B1 (en) 2013-08-26 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrate circuit with nanowires
US9306019B2 (en) * 2014-08-12 2016-04-05 GlobalFoundries, Inc. Integrated circuits with nanowires and methods of manufacturing the same
KR20160067640A (en) * 2014-12-04 2016-06-14 삼성전자주식회사 Semiconductor device having heterostructure and method of forming the same
CN107636809B (en) * 2015-06-27 2023-01-13 英特尔公司 Off-state parasitic leakage reduction for tunneling field effect transistors
US9496263B1 (en) 2015-10-23 2016-11-15 International Business Machines Corporation Stacked strained and strain-relaxed hexagonal nanowires
US9960232B2 (en) * 2016-05-09 2018-05-01 Samsung Electronics Co., Ltd. Horizontal nanosheet FETs and methods of manufacturing the same
US10026652B2 (en) * 2016-08-17 2018-07-17 Samsung Electronics Co., Ltd. Horizontal nanosheet FETs and method of manufacturing the same
US11695081B2 (en) * 2018-06-29 2023-07-04 Intel Corporation Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
US11569353B2 (en) 2021-02-02 2023-01-31 Micron Technology, Inc. Apparatuses including passing word lines comprising a band offset material, and related methods and systems

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683522A2 (en) 1994-05-20 1995-11-22 International Business Machines Corporation CMOS with strained Si/SiGe layers
KR20060023489A (en) * 2004-09-09 2006-03-14 삼성전자주식회사 Method of forming gate pattern of semiconductor device
US20090189189A1 (en) * 2008-01-29 2009-07-30 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US20110127618A1 (en) * 2009-11-30 2011-06-02 Thilo Scheiper Performance enhancement in pfet transistors comprising high-k metal gate stack by increasing dopant confinement
KR20110078162A (en) * 2009-12-30 2011-07-07 주식회사 하이닉스반도체 Semiconductor device and method for fabricating the same
US20120193708A1 (en) * 2011-02-01 2012-08-02 Globalfoundries Inc. Drive Current Increase in Field Effect Transistors by Asymmetric Concentration Profile of Alloy Species of a Channel Semiconductor Alloy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145167B1 (en) * 2000-03-11 2006-12-05 International Business Machines Corporation High speed Ge channel heterostructures for field effect devices
DE60038793D1 (en) * 1999-03-12 2008-06-19 Ibm FOR FIELD EFFECTS
EP1805823A2 (en) * 2004-10-12 2007-07-11 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683522A2 (en) 1994-05-20 1995-11-22 International Business Machines Corporation CMOS with strained Si/SiGe layers
KR20060023489A (en) * 2004-09-09 2006-03-14 삼성전자주식회사 Method of forming gate pattern of semiconductor device
US20090189189A1 (en) * 2008-01-29 2009-07-30 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US20110127618A1 (en) * 2009-11-30 2011-06-02 Thilo Scheiper Performance enhancement in pfet transistors comprising high-k metal gate stack by increasing dopant confinement
KR20110078162A (en) * 2009-12-30 2011-07-07 주식회사 하이닉스반도체 Semiconductor device and method for fabricating the same
US20120193708A1 (en) * 2011-02-01 2012-08-02 Globalfoundries Inc. Drive Current Increase in Field Effect Transistors by Asymmetric Concentration Profile of Alloy Species of a Channel Semiconductor Alloy

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2901490A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3072158A1 (en) * 2013-11-22 2016-09-28 Atomera Incorporated Vertical semiconductor devices including superlattice punch through stop layer and related methods
TWI569439B (en) * 2015-03-31 2017-02-01 晶元光電股份有限公司 Semiconductor cell

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US20140084246A1 (en) 2014-03-27
EP2901490B1 (en) 2022-06-15
TWI508298B (en) 2015-11-11
CN104584224B (en) 2017-12-29
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TW201419541A (en) 2014-05-16
KR101778866B1 (en) 2017-09-14

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