WO2014028964A1 - A method of forming a contact for a photovoltaic cell - Google Patents

A method of forming a contact for a photovoltaic cell Download PDF

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Publication number
WO2014028964A1
WO2014028964A1 PCT/AU2013/000911 AU2013000911W WO2014028964A1 WO 2014028964 A1 WO2014028964 A1 WO 2014028964A1 AU 2013000911 W AU2013000911 W AU 2013000911W WO 2014028964 A1 WO2014028964 A1 WO 2014028964A1
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WO
WIPO (PCT)
Prior art keywords
region
substrate
passivation layer
doping
conductive layer
Prior art date
Application number
PCT/AU2013/000911
Other languages
French (fr)
Inventor
Ned WESTERN
Stephen BREMNER
Original Assignee
Newsouth Innovations Pty Ltd
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Filing date
Publication date
Priority claimed from AU2012903616A external-priority patent/AU2012903616A0/en
Application filed by Newsouth Innovations Pty Ltd filed Critical Newsouth Innovations Pty Ltd
Priority to AU2013305471A priority Critical patent/AU2013305471C1/en
Priority to SG11201500617SA priority patent/SG11201500617SA/en
Priority to EP13831468.7A priority patent/EP2888766A4/en
Priority to US14/423,379 priority patent/US10361321B2/en
Priority to CN201380043233.3A priority patent/CN104603955B/en
Priority to KR1020157006328A priority patent/KR102081393B1/en
Publication of WO2014028964A1 publication Critical patent/WO2014028964A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method of forming a contact for a photovoltaic (PV) cell and relates in particular, not exclusively though, to a method of forming a contact on a rear surface of the PV cell.
  • PV photovoltaic
  • Typical PV cells of the first generation comprise large area p-n- unctions that are formed in doped silicon. Such PV cells have a passivation layer on a rear surface and electrical contacts penetrate through the passivation layer to contact selected highly doped regions of the silicon . The alignment of the contacts relative to the selected highly doped regions of the silicon and electrical properties of the contact material influence the
  • a method of forming a contact for a photovoltaic (PV) cell comprising the steps of:
  • the substrate having at least one first region that has a first doping property and is located at a first surface portion;
  • the substrate comprises at least one second region that is adjacent the at least one first region and my at least in part surround the at least one first region.
  • the at least one first region may have a doping property that is different to that of the at least one first region.
  • the at least one first region and the at least one second region may have the same polarity.
  • the at least one second region may have a p-n junction and the at least one first region may
  • the method typically is conducted such the electrical breakdown is only induced between the at least one first region and the conductive layer and not between the at least one second region and the conductive layer.
  • the method typically is conducted such that the
  • passivation properties of the passivation layer material that is adjacent the formed contact are substantially unaffected.
  • Embodiments of the invention have significant advantages. As the dielectric breakdown is induced only at the
  • the contact is effectively self-aligned.
  • the method typically is conducted such that a plurality of contacts is formed. Further, the method typically is conducted such that the contact is formed on a rear surface of the PV cell.
  • the doping property is a doping
  • the doping property may be a type of doping material.
  • the at least one first region has a higher doping concentration than the at least one second region.
  • the at least one first region may be doped with boron or any other suitable dopant material.
  • the dopant concentration of the at least one first region may range from lel8/cm 3 to le21/cm 3 , such as approximately le20/cm 3 .
  • the at least one second region may also be doped with boron or with any other suitable dopant material.
  • the dopant concentration of the at least one second region may range from lel5/cm 3 to lel7/cm 3 , such as approximately lel6/cm 3 .
  • the step of providing the substrate comprises forming the at least one first region. Forming the at least one first region may comprise thermal
  • forming the at least one first region comprises laser doping. Forming the at least one first region may comprise
  • the layer may include the dopant material, such as boron or any other suitable material.
  • the layer may be formed by spin-on deposition.
  • forming the at least one first region may comprise directing a laser beam selectively towards the at least one first surface portion such that the dopant material diffuses into the substrate and thereby forms the at least one first region.
  • the method may further comprise removing the layer that functions as a dopant source when the at least one first region has been formed.
  • Removing the layer may comprise rinsing, RCA cleaning and/or selective etching.
  • the substrate is a p-type substrate, such as a p-type silicon wafer.
  • the substrate may be selectively doped in the above- described manner and consequently the at least one first region may have a higher p-dopant concentration than some or all of the remaining regions of the substrate.
  • the substrate may also be an n-type
  • substrate and the at least one first region may have a concentration of an n-type dopant that is higher than that of some or all of the remaining regions of the substrate.
  • the step of depositing the passivation layer onto the at least a portion of the substrate is conducted by virtue of chemical vapour deposition, such as plasma-enhanced chemical vapour deposition.
  • the passivation layer may comprise amorphous silicon or any other suitable dielectric material.
  • the step of depositing the conductive layer over the passivation layer may be conducted using thermal
  • the conductive layer may be deposited over the passivation layer using sputtering or any other physical or chemical deposition technique.
  • the material of the conductive layer may be selected based on the doping property of the at least one first region. For example, if the at least one first region is p-doped, the material of the conductive layer may be selected from suitable acceptor materials and may, for example, be aluminium. Alternatively, if the at least one first region is n- doped, the material of the conductive layer may be
  • suitable donor materials such as arsenic.
  • the method may further comprise a step of removing at least a portion of the conductive layer.
  • a method of forming a photovoltaic cell comprising forming a contact in accordance with the first aspect of the present invention.
  • a photovoltaic cell formed by the method in accordance with the second aspect of the present invention
  • Figure 1 is a flow diagram illustrating a method of forming a contact for a photovoltaic cell in accordance with an embodiment of the invention.
  • FIGS 2 to 7 illustrate the formation of components of the photovoltaic cell formed in accordance with
  • the contact is formed on a rear surface of the PV cell that will not receive primary illumination.
  • the PV cell comprises suitably doped silicon.
  • Figure 1 shows a flow diagram illustrating a method 10 of forming a contact on a rear surface of the PV cell.
  • Figures 2 to 7 illustrate the formation of the PV cell and show partially fabricated components.
  • a substrate 22 is provided.
  • the substrate 22 is a p-type silicon wafer.
  • the doping concentration of the p-type Silicon wafer is approximately lel6/cm 3 .
  • the PV cell further comprises a layer (not shown) on a front surface portion of the substrate 22 which receives primary (solar) illumination when the PV cell is in use. Together with the substrate 22, this layer, which may for example be a thin n-type layer, is arranged to form a p-n junction .
  • a plurality of first regions 24 is formed within the substrate 22 (only one first region is shown in Figures 2 to 7) .
  • the first regions 24 are located at respective first (rear) surface portions of the substrate 22 as exemplarily shown in Figure 3.
  • the first regions are in the form of islands.
  • the first regions 24 have a doping concentration that differs from that of adjacent regions of the p-type silicon wafer 22.
  • the first regions are heavily p-doped and have p-doping concentration that is higher than that of adjacent regions of the p-type silicon wafer 22.
  • the heavily p-doped region 24 has a p-doping concentration of approximately le20/cm 3 .
  • the first region may also have a doping property other that a doping concentration that is different to that of adjacent regions.
  • the doping property may be
  • the heavily p-doped regions 24 may be formed using any suitable method and in this example these regions are formed using laser doping.
  • Forming the heavily p-doped regions 24 comprises depositing a material that functions as a dopant source onto the surface portions of the heavily p-doped regions 24.
  • a spin on liquid containing boron is deposited on the rear surface portions of the p-type silicon wafer 22.
  • a laser beam is then directed onto the formed film in a manner such that boron diffuses selectively into the silicon wafer 22 to form the heavily p-doped region 24.
  • the film is
  • Step 13 deposits a passivation layer 26 over the rear surface portions of the silicon wafer 22.
  • the passivation layer 26 is an amorphous silicon layer and has a thickness in the range of 30 to 120nm, in particular in the range of 50 to 70nm, such as
  • Step 14 deposits a conductive layer 28 on the amorphous silicon layer 26.
  • the conductive layer 28 is an aluminium layer.
  • the aluminium layer 28 is deposited by virtue of thermal evaporation.
  • a person skilled in the art will appreciate that other suitable methods to deposit the conductive layer are envisaged, such as sputtering.
  • the conductive layer may not necessarily be formed form a metallic material .
  • Step 15 applies an electric field between the aluminium layer 28 and the silicon wafer 22.
  • a voltage 30 is applied in reverse bias.
  • the substrate 22 is p-type and a positive voltage 30 is applied to the aluminium layer 28 as illustrated in Figure 6.
  • a negative voltage is applied to the conductive layer.
  • an electric field is generated across the passivation layer 26 between the aluminium layer 28 and the p-type silicon substrate 22.
  • the strength of the generated electric field is higher across the region 32 that is located directly above the heavily p-doped region 24 than across adjacent regions of passivation layer.
  • the heavily p- doped region 24 forms a depletion region that is narrow enough for tunnelling to occur. Consequently, the
  • the passivation layer 26 is sufficiently thin such that the relatively large applied field results in a breakdown of dielectric
  • the dielectric breakdown is a "hard" breakdown such that the amorphous silicon layer 26 locally loses its insulating properties.
  • the permanent change in local electrical properties of the regions 32 results in the formation of an electrical contact.
  • the hard dielectric breakdown is limited to the local regions 32 directly at the heavily p-doped regions 24. Regions of the passivation layer 26 that are adjacent to region 32 are not significantly affected by the applied voltage 30 and as a consequence these regions maintain the passivation properties of amorphous silicon.
  • the bias voltage required to induce the hard breakdown of the dielectric material 26 generally depends on material properties of the heavily p-doped regions 24 and the dielectric material 26.
  • the bias voltage typically is in the range of 5 to 30V, such as approximately 10V.
  • the bias voltage increases with the resistivity of the dielectric material 26.
  • the bias voltage is
  • the bias voltage required to induce the hard breakdown of a 64nm thick amorphous silicon layer is in the range 2 to 5V; a lOnm thick aluminium oxide layer is in the range of 5 to 10V; an 80nm thick silicon rich silicon nitride layer is in the range 13 to 18V and a 200nm silicon nitride layer is in the range of 23 to 28V.
  • a self-aligned electrical contact is formed without the requirement of patterning or masking the amorphous silicon layer 26.
  • the aluminium layer 28 forms a portion of the rear contact of the PV cell as shown in Figure 7.
  • the method 10 may further comprise a step of removing the aluminium layer 28.
  • Advantageous embodiments of the method 10 can be used to form contacts to the base of a PV device through an emitter of a PV device.
  • the steps of method 10 are carried out on a semiconductor substrate, for example a silicon wafer, which comprises a p-n junction.
  • the semiconductor substrate may be a p-type silicon wafer 11 (base) and an n-type region (emitter) may be formed on a surface of the p-type silicon wafer 11 by diffusion of n-type atoms, for example phosphorous atoms.
  • the remaining steps of method 10 are performed on the n- type surface of the silicon wafer 11.
  • advantages of contacting the base of the PV device through the emitter of the PV device by using the method 10 include floating junction passivation, implementation of inter-digitated rear contact designs, and minimisation of shunts .
  • the substrate 22 may be an n type wafer and the at least one first region may be a heavily n-doped region.
  • the variations of the described method may be used to form selective contacts at a front surface of a PV cell.

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Abstract

The present disclosure provides a method of forming a contact for a photovoltaic (PV) cell. The method comprises the step of providing a substrate of a semiconductor material. The substrate has first regions that have a first doping property and are located at first surface portions. The method also comprises depositing a passivation layer on the surface of the substrate including the first surface portions. Further, the method comprises depositing a conductive layer on the passivation layer such that material of the passivation layer is sandwiched between the first regions and the conductive layer. In addition, the method comprises applying an electric field between the first regions and the conductive layer in a manner such that locally a dielectric breakdown of the sandwiched passivation layer material is induced. The first regions have a doping property and the method is conducted such that an electrical resistance is reduced in the passivation layer at the first regions and an electrical contact is formed.

Description

A ME THOD OF FORMING A CONTACT FOR A PHOTOVOLTAIC CELL
Field of the Invention
The present invention relates to a method of forming a contact for a photovoltaic (PV) cell and relates in particular, not exclusively though, to a method of forming a contact on a rear surface of the PV cell.
Background of the Invention
Typical PV cells of the first generation comprise large area p-n- unctions that are formed in doped silicon. Such PV cells have a passivation layer on a rear surface and electrical contacts penetrate through the passivation layer to contact selected highly doped regions of the silicon . The alignment of the contacts relative to the selected highly doped regions of the silicon and electrical properties of the contact material influence the
efficiency of the solar cell and there is a need for improvement .
Summary of the Invention
In a first aspect of the invention, there is provided a method of forming a contact for a photovoltaic (PV) cell, the method comprising the steps of:
providing a substrate of a semiconductor material, the substrate having at least one first region that has a first doping property and is located at a first surface portion;
depositing a passivation layer over at least a portion of the surface of the substrate including the at least one first surface portion; depositing a conductive layer over the passivation layer such that material of the passivation layer is sandwiched between the at least one first region of the substrate and the conductive layer; and
applying an electric field between the at least one first region and the conductive layer in a manner such that locally a dielectric breakdown of the sandwiched passivation layer material is induced;
wherein the method is conducted such that an
electrical resistance is reduced in the passivation layer at the at least one first region and an electrical contact is formed.
In one specific embodiment, the substrate comprises at least one second region that is adjacent the at least one first region and my at least in part surround the at least one first region. The at least one first region may have a doping property that is different to that of the at least one first region. The at least one first region and the at least one second region may have the same polarity. Alternatively, the at least one second region may have a p-n junction and the at least one first region may
penetrate through the p-n junction. The method typically is conducted such the electrical breakdown is only induced between the at least one first region and the conductive layer and not between the at least one second region and the conductive layer.
The method typically is conducted such that the
passivation properties of the passivation layer material that is adjacent the formed contact are substantially unaffected.
Embodiments of the invention have significant advantages. As the dielectric breakdown is induced only at the
locations of the at least one first region, the contact is effectively self-aligned. The method typically is conducted such that a plurality of contacts is formed. Further, the method typically is conducted such that the contact is formed on a rear surface of the PV cell.
In one embodiment, the doping property is a doping
concentration. Alternatively, the doping property may be a type of doping material.
In a specific embodiment, the at least one first region has a higher doping concentration than the at least one second region. For example, the at least one first region may be doped with boron or any other suitable dopant material. The dopant concentration of the at least one first region may range from lel8/cm3 to le21/cm3, such as approximately le20/cm3. The at least one second region may also be doped with boron or with any other suitable dopant material. The dopant concentration of the at least one second region may range from lel5/cm3 to lel7/cm3, such as approximately lel6/cm3.
In one embodiment, the step of providing the substrate comprises forming the at least one first region. Forming the at least one first region may comprise thermal
diffusion. In one specific example forming the at least one first region comprises laser doping. Forming the at least one first region may comprise
depositing a layer that functions as a dopant source for the at least one first surface portion. The layer may include the dopant material, such as boron or any other suitable material. The layer may be formed by spin-on deposition. In addition, forming the at least one first region may comprise directing a laser beam selectively towards the at least one first surface portion such that the dopant material diffuses into the substrate and thereby forms the at least one first region.
The method may further comprise removing the layer that functions as a dopant source when the at least one first region has been formed. Removing the layer may comprise rinsing, RCA cleaning and/or selective etching.
In one specific embodiment the substrate is a p-type substrate, such as a p-type silicon wafer. In addition, the substrate may be selectively doped in the above- described manner and consequently the at least one first region may have a higher p-dopant concentration than some or all of the remaining regions of the substrate.
Alternatively, the substrate may also be an n-type
substrate and the at least one first region may have a concentration of an n-type dopant that is higher than that of some or all of the remaining regions of the substrate.
In one embodiment, the step of depositing the passivation layer onto the at least a portion of the substrate is conducted by virtue of chemical vapour deposition, such as plasma-enhanced chemical vapour deposition.
The passivation layer may comprise amorphous silicon or any other suitable dielectric material.
The step of depositing the conductive layer over the passivation layer may be conducted using thermal
evaporation. Alternatively, the conductive layer may be deposited over the passivation layer using sputtering or any other physical or chemical deposition technique. The material of the conductive layer may be selected based on the doping property of the at least one first region. For example, if the at least one first region is p-doped, the material of the conductive layer may be selected from suitable acceptor materials and may, for example, be aluminium. Alternatively, if the at least one first region is n- doped, the material of the conductive layer may be
selected from suitable donor materials, such as arsenic.
The method may further comprise a step of removing at least a portion of the conductive layer.
In a second aspect of the invention, there is provided a method of forming a photovoltaic cell comprising forming a contact in accordance with the first aspect of the present invention.
In a third aspect of the present invention there is provided a photovoltaic cell formed by the method in accordance with the second aspect of the present
invention.
Brief Description of the Drawings
In order to fully understand the present invention, embodiments of the present invention will now be
described, by way of example only, with reference to the accompanying drawings, in which:
Figure 1 is a flow diagram illustrating a method of forming a contact for a photovoltaic cell in accordance with an embodiment of the invention; and
Figures 2 to 7 illustrate the formation of components of the photovoltaic cell formed in accordance with
embodiments of the present invention. Description of an Embodiment of the Invention
Referring to the Figures, there is illustrated a method 10 of forming a contact for a photovoltaic (PV) cell in accordance with a specific embodiment of the invention. In this embodiment, the contact is formed on a rear surface of the PV cell that will not receive primary illumination. In this embodiment, the PV cell comprises suitably doped silicon.
Figure 1 shows a flow diagram illustrating a method 10 of forming a contact on a rear surface of the PV cell.
Figures 2 to 7 illustrate the formation of the PV cell and show partially fabricated components.
In a first step 11, a substrate 22 is provided. In this embodiment, the substrate 22 is a p-type silicon wafer. The doping concentration of the p-type Silicon wafer is approximately lel6/cm3.
The PV cell further comprises a layer (not shown) on a front surface portion of the substrate 22 which receives primary (solar) illumination when the PV cell is in use. Together with the substrate 22, this layer, which may for example be a thin n-type layer, is arranged to form a p-n junction .
In a further step 12, a plurality of first regions 24 is formed within the substrate 22 (only one first region is shown in Figures 2 to 7) . The first regions 24 are located at respective first (rear) surface portions of the substrate 22 as exemplarily shown in Figure 3. The first regions are in the form of islands. The first regions 24 have a doping concentration that differs from that of adjacent regions of the p-type silicon wafer 22. In this embodiment the first regions are heavily p-doped and have p-doping concentration that is higher than that of adjacent regions of the p-type silicon wafer 22. In this example, the heavily p-doped region 24 has a p-doping concentration of approximately le20/cm3.
A person skilled in the art will appreciate that in variations of the described embodiment the first region may also have a doping property other that a doping concentration that is different to that of adjacent regions. For example, the doping property may be
associated with a dopant type or material.
The heavily p-doped regions 24 may be formed using any suitable method and in this example these regions are formed using laser doping. Forming the heavily p-doped regions 24 comprises depositing a material that functions as a dopant source onto the surface portions of the heavily p-doped regions 24. In this example, a spin on liquid containing boron is deposited on the rear surface portions of the p-type silicon wafer 22. A laser beam is then directed onto the formed film in a manner such that boron diffuses selectively into the silicon wafer 22 to form the heavily p-doped region 24. The film is
subsequently removed from the surface portions of the substrate 22, for example, by rinsing or RCA cleaning.
Step 13 deposits a passivation layer 26 over the rear surface portions of the silicon wafer 22. In this example, the passivation layer 26 is an amorphous silicon layer and has a thickness in the range of 30 to 120nm, in particular in the range of 50 to 70nm, such as
approximately 50nm. Step 14 deposits a conductive layer 28 on the amorphous silicon layer 26. In this particular embodiment, the conductive layer 28 is an aluminium layer. The aluminium layer 28 is deposited by virtue of thermal evaporation. However, a person skilled in the art will appreciate that other suitable methods to deposit the conductive layer are envisaged, such as sputtering. Further, the conductive layer may not necessarily be formed form a metallic material .
Step 15 applies an electric field between the aluminium layer 28 and the silicon wafer 22. As such, a voltage 30 is applied in reverse bias. In this example the substrate 22 is p-type and a positive voltage 30 is applied to the aluminium layer 28 as illustrated in Figure 6. In an alternative embodiment, in which the substrate comprises an n-type material, a negative voltage is applied to the conductive layer.
By applying the voltage 30 in reverse bias, an electric field is generated across the passivation layer 26 between the aluminium layer 28 and the p-type silicon substrate 22. The strength of the generated electric field is higher across the region 32 that is located directly above the heavily p-doped region 24 than across adjacent regions of passivation layer. In this embodiment the heavily p- doped region 24 forms a depletion region that is narrow enough for tunnelling to occur. Consequently, the
electrical field is mainly applied across the passivation layer 26 at the first regions 24. The passivation layer 26 is sufficiently thin such that the relatively large applied field results in a breakdown of dielectric
properties and a related permanent local reduction of electrical resistance of the passivation layer 26 in the region 32. The dielectric breakdown is a "hard" breakdown such that the amorphous silicon layer 26 locally loses its insulating properties. The permanent change in local electrical properties of the regions 32 results in the formation of an electrical contact. The hard dielectric breakdown is limited to the local regions 32 directly at the heavily p-doped regions 24. Regions of the passivation layer 26 that are adjacent to region 32 are not significantly affected by the applied voltage 30 and as a consequence these regions maintain the passivation properties of amorphous silicon.
The bias voltage required to induce the hard breakdown of the dielectric material 26 generally depends on material properties of the heavily p-doped regions 24 and the dielectric material 26. The bias voltage typically is in the range of 5 to 30V, such as approximately 10V.
Generally, the bias voltage increases with the resistivity of the dielectric material 26. The bias voltage is
affected by thickness of the dielectric material 26 and increases when the thickness of the dielectric material 26 increases .
The inventors have found that the bias voltage required to induce the hard breakdown of a 64nm thick amorphous silicon layer is in the range 2 to 5V; a lOnm thick aluminium oxide layer is in the range of 5 to 10V; an 80nm thick silicon rich silicon nitride layer is in the range 13 to 18V and a 200nm silicon nitride layer is in the range of 23 to 28V.
By conducting the method 10 in accordance with the
specific embodiment of the invention, a self-aligned electrical contact is formed without the requirement of patterning or masking the amorphous silicon layer 26.
Furthermore, as dielectric properties of regions adjacent to the regions 32 of the passivation layer 26 are not significantly affected, recombination of charge carriers at the rear surface of the PV cell can be reduced.
In this particular example, the aluminium layer 28 forms a portion of the rear contact of the PV cell as shown in Figure 7.
The method 10 may further comprise a step of removing the aluminium layer 28.
Advantageous embodiments of the method 10 can be used to form contacts to the base of a PV device through an emitter of a PV device. In these specific embodiments the steps of method 10 are carried out on a semiconductor substrate, for example a silicon wafer, which comprises a p-n junction. The semiconductor substrate may be a p-type silicon wafer 11 (base) and an n-type region (emitter) may be formed on a surface of the p-type silicon wafer 11 by diffusion of n-type atoms, for example phosphorous atoms. The remaining steps of method 10 are performed on the n- type surface of the silicon wafer 11. Some of the
advantages of contacting the base of the PV device through the emitter of the PV device by using the method 10 include floating junction passivation, implementation of inter-digitated rear contact designs, and minimisation of shunts .
A person skilled in the art will appreciate that the embodiments of the invention described in relation to a PV device realised on a p-type substrate are applicable to PV devices realised on n-type substrates. Further, the person skilled in the art will appreciate that, in order to realise a complete and functioning, PV device additional processing steps are required. These further processing steps are known in the art.
Modifications and variations as would be apparent to a skilled addressee are deemed to be within the scope of the present invention. For example, a person skilled in the art will appreciate that the substrate 22 may be an n type wafer and the at least one first region may be a heavily n-doped region. Further, the variations of the described method may be used to form selective contacts at a front surface of a PV cell.

Claims

The Claims:
1. A method of forming a contact for a photovoltaic (PV) cell, the method comprising the steps of:
providing a substrate of a semiconductor material, the substrate having at least one first region that has a first doping property and is located at a first surface portion;
depositing a passivation layer over at least a portion of the surface of the substrate including the at least one first surface portion;
depositing a conductive layer over the passivation layer such that material of the passivation layer is sandwiched between the at least one first region of the substrate and the conductive layer; and
applying an electric field between the at least one first region and the conductive layer in a manner such that locally a dielectric breakdown of the sandwiched passivation layer material is induced;
wherein the method is conducted such that an
electrical resistance is reduced in the passivation layer at the at least one first region and an electrical contact is formed.
2. The method claim 1 wherein the substrate comprises at least one second region that is adjacent the at least one first region and has a doping property that is different to that of the at least one first region.
3. The method of claim 2 wherein the method is conducted such the electrical breakdown is only induced between the at least one first region and the conductive layer and not between the at least one second region and the conductive layer .
4. The method of any one of the preceding claims wherein the method is conducted such that the passivation properties of passivation layer material that is adjacent the formed contact are substantially unaffected.
5. The method of any one of the preceding claims being conducted such that the contact is formed on a rear surface of the PV cell.
6. The method of any one of the preceding claims wherein the doping property comprises a doping concentration.
7. The method of any one of the preceding claims wherein the doping property comprises a type of doping material.
8. The method of any one of claim 2 or 3 or anyone of claims 5 to 7 when dependent on anyone of claims 2 or 3 wherein the at least one first region has a higher doping concentration than the at least one second region.
9. The method of any one of the preceding claims wherein the method is conducted such that a plurality of contacts is formed.
10. The method of any one of the preceding claims wherein the step of providing the substrate comprises forming the at least one first region.
11. The method of claim 10 wherein the at least one first region is formed using thermal diffusion.
12. The method of claim 11 wherein the at least one first region is formed using laser doping.
13. The method of claim 12 wherein forming the at least one first region comprises:
depositing a layer that functions as a dopant source for the at least one first surface portion; and
directing a laser beam selectively towards the first surface portion such that the dopant material diffuses into the substrate and thereby forms the at least one first region.
14. The method of any one of the preceding claims wherein the passivation layer comprises amorphous silicon.
15. The method of any one of the preceding claims wherein the material of the conductive layer is selected based on the doping property of the at least one first region.
16. The method of any one of the preceding claims wherein the substrate comprises at least one second region that is adjacent the at least one first region and has a doping property that is different to that of the at least one first region, the at least one first region and the at least one second region having the same polarity.
17. The method claim 2 or anyone of claims 3 to 15 when dependent on claim 2 wherein the at least one second region has a p-n junction and wherein the at least one first region penetrates through the p-n junction.
18. A method of forming a photovoltaic cell comprising forming a contact for a PV cell using a method in
accordance with any one of the preceding claims.
19. A photovoltaic cell formed by the method of claim 18.
PCT/AU2013/000911 2012-08-22 2013-08-16 A method of forming a contact for a photovoltaic cell WO2014028964A1 (en)

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EP13831468.7A EP2888766A4 (en) 2012-08-22 2013-08-16 A method of forming a contact for a photovoltaic cell
US14/423,379 US10361321B2 (en) 2012-08-22 2013-08-16 Method of forming a contact for a photovoltaic cell
CN201380043233.3A CN104603955B (en) 2012-08-22 2013-08-16 Method of forming contact for photovoltaic cell
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109983584A (en) * 2016-11-25 2019-07-05 荷兰应用自然科学研究组织 Tno Photovoltaic cell with passivation contact

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538564A (en) * 1994-03-18 1996-07-23 Regents Of The University Of California Three dimensional amorphous silicon/microcrystalline silicon solar cells
US20040025932A1 (en) * 2002-08-12 2004-02-12 John Husher Variegated, high efficiency solar cell and method for making same
US20110086468A1 (en) * 2009-10-08 2011-04-14 Yacine Felk Assembly of semiconductor chips/wafers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972464B2 (en) * 2002-10-08 2005-12-06 Great Wall Semiconductor Corporation Power MOSFET
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
JP2008028249A (en) * 2006-07-24 2008-02-07 Matsushita Electric Ind Co Ltd Semiconductor device, and method for manufacturing semiconductor device
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP5019397B2 (en) * 2006-12-01 2012-09-05 シャープ株式会社 Solar cell and method for manufacturing the same
JP4847889B2 (en) * 2007-02-13 2011-12-28 株式会社日立国際電気 Software defined radio
ITMI20071389A1 (en) * 2007-07-12 2009-01-13 System Plast Spa SYSTEM OF MINI CONVEYORS
US20090022706A1 (en) * 2007-07-20 2009-01-22 Auspex Pharmaceuticals, Inc. Substituted cyclohexenes
US20100275982A1 (en) * 2007-09-04 2010-11-04 Malcolm Abbott Group iv nanoparticle junctions and devices therefrom
CN101855730A (en) * 2007-11-09 2010-10-06 夏普株式会社 Solar battery module and method for manufacturing solar battery module
JP5286046B2 (en) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
US20090227061A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Establishing a high phosphorus concentration in solar cells
DE102010025968B4 (en) * 2010-07-02 2016-06-02 Schott Ag Generation of microholes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538564A (en) * 1994-03-18 1996-07-23 Regents Of The University Of California Three dimensional amorphous silicon/microcrystalline silicon solar cells
US20040025932A1 (en) * 2002-08-12 2004-02-12 John Husher Variegated, high efficiency solar cell and method for making same
US20110086468A1 (en) * 2009-10-08 2011-04-14 Yacine Felk Assembly of semiconductor chips/wafers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2888766A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109983584A (en) * 2016-11-25 2019-07-05 荷兰应用自然科学研究组织 Tno Photovoltaic cell with passivation contact

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CN104603955A (en) 2015-05-06
SG10201701426TA (en) 2017-03-30
AU2013305471A1 (en) 2015-02-19
AU2013305471C1 (en) 2018-08-23
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KR20150046107A (en) 2015-04-29
AU2013305471B2 (en) 2018-05-17

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