WO2014022971A1 - Laser à modulation externe, appareil et système passif de communication optique - Google Patents

Laser à modulation externe, appareil et système passif de communication optique Download PDF

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Publication number
WO2014022971A1
WO2014022971A1 PCT/CN2012/079780 CN2012079780W WO2014022971A1 WO 2014022971 A1 WO2014022971 A1 WO 2014022971A1 CN 2012079780 W CN2012079780 W CN 2012079780W WO 2014022971 A1 WO2014022971 A1 WO 2014022971A1
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Prior art keywords
optical
laser
array
externally modulated
modulated laser
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Application number
PCT/CN2012/079780
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English (en)
Chinese (zh)
Inventor
周小平
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华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2012/079780 priority Critical patent/WO2014022971A1/fr
Priority to CN201280000945.2A priority patent/CN102906949B/zh
Publication of WO2014022971A1 publication Critical patent/WO2014022971A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Definitions

  • the present invention relates to optical fiber communication technologies, and more particularly to an external modulation laser, a passive optical communication device, and a system. Background technique
  • the electroabsorption modulation laser is the most typical device due to its small size and fast modulation speed, and is the key device for the next generation of the access network.
  • the wavelength range of XG-PON is between 1575 and 1580 nm.
  • the electroabsorption modulation laser is mainly composed of two parts: a distributed feedback (DFB: Distributed Feedback) laser and an electroabsorption modulator (EAM: Electra-absorption Modulator), a DFB laser for generating a continuous laser, and an electroabsorption modulator for high speed.
  • the electrical signal is converted into a high speed optical signal.
  • a refrigerator is installed in the DFB laser to keep the DFB laser operating at a fixed temperature, and the refrigerator additionally increases the work of the laser module. Consumption. Summary of the invention
  • Embodiments of the present invention provide an external modulation laser, a passive optical communication device, and a system, which can reduce power consumption of an externally modulated laser.
  • an embodiment of the present invention provides an external modulation laser, including:
  • a laser comprising a partial mirror, a gain medium, and a filter
  • the partial mirror, the gain medium and the filter constitute a laser oscillation cavity of the laser; the filter is configured to filter the light emitted by the gain medium to generate a light wave of a preset wavelength;
  • the partial mirror is configured to transmit a portion of the generated predetermined wavelength light wave to a modulator for external modulation, and to convert another portion of the generated predetermined wavelength light wave back to the gain medium.
  • the laser further includes: A total reflection mirror disposed at a rear end of the gain medium for reflecting light emitted from a rear end of the gain medium back to the gain medium.
  • the total reflection mirror is coupled to the gain medium to form a reflective gain medium
  • the partial mirror is coupled to the filter to form a partial reflection Type filter.
  • the total reflection mirror is coupled to the filter to form a reflection type filter
  • the partial reflection mirror is coupled to the gain medium to form a partial reflection Type gain medium.
  • the filter comprises a thin film filter.
  • the external modulation laser further includes:
  • a beam splitter is located between the laser and the modulator for splitting the light wave output by the laser into at least two light waves.
  • the external modulation laser further includes: a modulator array, where the modulator array includes at least the first, second, third, fourth, or fifth possible implementation manners Two modulators, the number of modulators included in the modulator array being the same as the number of paths of the output light waves of the beam splitter;
  • the modulator array is configured to separately modulate each of the light waves output by the beam splitter into corresponding optical signals.
  • the external modulation laser further includes: an amplifier array, where the amplifier array is at least based on the first, second, third, fourth, fifth, or sixth possible implementation manners Two amplifiers are included, the number of amplifiers included in the amplifier array being the same as the number of paths of the output light waves of the splitter.
  • the amplifier array is located in the optical splitter and the modulation Between the arrays of the arrays, the amplifier arrays are used to amplify the respective optical waves output by the optical splitters.
  • the amplifier array is located after the modulator array, based on the first, second, third, fourth, fifth, sixth, and seventh possible implementation manners.
  • the amplifier array is configured to perform amplification processing on each of the optical signals modulated by the modulator array.
  • the amplifier array is coupled to the The modulator array.
  • the laser And an optical fiber connection between the optical splitter, the amplifier array, and the modulator array.
  • the laser And a planar optical waveguide connection between the optical splitter, the amplifier array and the modulator array.
  • an embodiment of the present invention provides a passive optical communication device, including: the external modulation laser.
  • the fiber optic communication device includes an optical line terminal or an optical network unit.
  • an embodiment of the present invention provides a passive optical network system, including: an optical line terminal located at a central control station, and a plurality of optical network units located at a user side, the optical line terminal and the optical network unit Perform fiber optic communication;
  • the optical line terminal includes the above external modulation laser
  • the optical network unit includes the above-described externally modulated laser.
  • the external modulation laser of the embodiment adopts a temperature-insensitive filter, and the light emitted by the gain medium is filtered to generate a light wave of a preset wavelength, which can realize stable output of the optical signal without installing a refrigerator.
  • the power consumption of the externally modulated laser is reduced, the hardware cost is reduced, and the problem of large power consumption of the existing externally modulated laser is solved.
  • FIG. 1 is a schematic structural diagram of a laser in an externally modulated laser according to an embodiment of the present invention
  • 2 is a schematic structural diagram of an external modulation laser according to another embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a specific implementation of the external modulation laser shown in FIG. 2
  • FIG. 5 is a schematic structural view showing still another specific implementation of the external modulation laser shown in FIG. 2.
  • FIG. 6 is a schematic structural view showing another specific implementation of the external modulation laser shown in FIG.
  • Existing electroabsorption modulated lasers are mainly composed of a DFB laser and an electroabsorption modulator.
  • a DFB laser is used to generate a continuous laser
  • an electroabsorption modulator is used to convert a high-speed electrical signal into a high-speed optical signal.
  • the DFB grating in the DFB laser determines the wavelength of the laser generated by the DFB laser.
  • the DFB grating is susceptible to temperature and the temperature tuning factor is approximately 0.08 nm/K, ie the temperature changes by 1 degree and the wavelength changes by 0.08 nm.
  • General industrial lasers are required to operate in the range of -40 to 85 degrees. If there is no temperature control, the wavelength of the DFB laser will vary by about 10 nm, far exceeding the standard requirements of 10G PON.
  • a refrigerator is installed in the DFB laser to keep the DFB laser operating at a fixed temperature, and the refrigerator additionally increases the work of the laser module. Consumption.
  • the present invention provides a method capable of reducing the power consumption of an externally modulated laser.
  • the externally modulated laser provided by the present invention includes a laser and a modulator for generating a light wave of a predetermined wavelength, and a modulator for converting the electrical signal into an optical signal.
  • the laser is improved, that is, the laser of the present invention uses a temperature-insensitive filter to replace the DFB grating in the original EML, so that the wavelength of the laser is insensitive to changes in the external temperature, thereby There is no need to install additional chillers in the laser to reduce the power consumption of the externally modulated laser.
  • 1 is a schematic structural diagram of a laser in an externally modulated laser according to an embodiment of the present invention, including: a total reflection mirror 11 , a gain medium 112 , a partial mirror 113 , and a filter 1 14 ;
  • the total reflection mirror 11 1 , the gain medium 112 , the partial mirror 1 13 , and the filter 1 14 constitute a laser oscillation chamber of the laser.
  • the filter 114 After the light from the gain medium 1 12 is filtered by the filter 114, only the light matching the pass band of the filter 114 can pass, and the light outside the pass band is attenuated, so that the light of the predetermined wavelength can be generated.
  • the light passing through the filter 114 is transmitted to a partial mirror, wherein a part of the light is transmitted through the partial mirror 113, and the other portion of the light is reflected back by the partial mirror 113, and is reinjected back into the gain medium 1 12 through the gain medium 112.
  • the injected light is transmitted to the total reflection mirror 11 1 , reflected back by the total reflection mirror 11 , re-injected into the gain medium 112, and then amplified by a gain and transmitted to the filter 114.
  • the above process can be considered to complete a complete oscillation.
  • the gain medium After multiple complete oscillations, the light of the corresponding wavelength with the filter passband is continuously strengthened.
  • the enhancement is to a certain extent, the gain of the gain medium is saturated. In the end, it will reach a stable state of stable work.
  • the pass band of the filter 1 14 can be specifically set according to the wavelength of the actually required light wave.
  • the operating wavelength of the laser of this embodiment is mainly determined by the filter 114, and does not require any wavelength calibration and stabilization mechanism. Therefore, the laser of the embodiment is simple and easy to use, and the cost is low.
  • the filter 114 includes, but is not limited to, a thin film filter. It should be noted that the function of the filter of the present embodiment can be implemented by any temperature insensitive filtering module.
  • total reflection mirror 111 and gain medium 112 may be coupled together to form a reflective gain medium, such as a Reflective Semiconductor Optical Amplifier (RSOA).
  • RSOA Reflective Semiconductor Optical Amplifier
  • the partial mirror 113 and the filter 14 may be coupled together to form a reflective filter, such as a partially reflected Fiber Bragg Grating (FBG).
  • FBG Fiber Bragg Grating
  • total reflection mirror 11 1 and filter 14 14 may be coupled together to form a reflective filter, and partial mirror 113 and gain medium 112 may be coupled together to form a partially reflective gain. medium.
  • the external modulation laser of the embodiment adopts a temperature-insensitive filter, and the light emitted by the gain medium is filtered to generate a light wave of a preset wavelength, which can realize stable output of the optical signal without installing a refrigerator.
  • the power consumption of the externally modulated laser is reduced, the hardware cost is reduced, and the problem of large power consumption of the existing externally modulated laser is solved.
  • the external modulation laser of the embodiment includes: a laser 11, a modulator array 12, and a beam splitter 13 according to the laser of FIG. .
  • the laser 11 is the laser described in the embodiment of Fig. 1.
  • the composition and working principle of the laser 11 are described in detail with reference to the embodiment shown in Fig. 1.
  • the beam splitter 13 is located in the laser 11 and the modulator array
  • the light wave for outputting the laser 11 is divided into at least two light waves. It should be noted that, in this embodiment, the number of optical paths that need to be output can be determined according to the actual required output optical power.
  • the beam splitter 13 includes, but is not limited to, a multi-mode interferometer (MMI).
  • MMI multi-mode interferometer
  • the beam splitter 13 may also employ a cascaded Y-branch.
  • the modulator array 12 includes at least two modulators, and the number of modulators included in the modulator array is the same as the number of paths of the output light waves of the beam splitter 13; wherein, the modulator array 12 For modulating each of the light waves output by the beam splitter 13 into corresponding optical signals.
  • the modulator in modulator array 12 can be an electroabsorption modulator (Electra-absorption)
  • the Modulator, ⁇ may also be a ⁇ interferometric modulator, which is not limited in the present invention.
  • the externally modulated laser of the present embodiment further includes: an amplifier array 14.
  • the amplifier of the embodiment includes, but is not limited to, a semiconductor optical amplifier.
  • the amplifier array 14 includes at least two amplifiers for amplifying the respective optical waves to meet the requirements of a specific output optical power, and the number of amplifiers included in the amplifier array 14 is the same as the number of paths of the output optical waves of the optical splitter 13.
  • the gain of the amplifier of this embodiment can be dynamically adjusted as the external temperature changes, thereby compensating for the influence of the temperature change on the laser.
  • the amplifier array 14 is located between the beam splitter 13 and the modulator array 12, specifically for amplifying each of the light waves output by the beam splitter 13; In an optional embodiment of the present invention, the amplifier array 14 is located after the modulator array 12, and is specifically configured to perform amplification processing on each of the optical signals modulated by the modulator array 12.
  • the above array of amplifiers can be coupled to the modulator array or separately.
  • the laser 11, the modulation array 12, the optical splitter 13, and the amplifier array 14 may be connected by an optical fiber, or may be connected by a Planar lightwave circuit (PLC).
  • PLC Planar lightwave circuit
  • the laser 1 1 , the modulation array 12 , the beam splitter 13 , and the amplifier array 14 are integrally coupled into a PLC chip including, but not limited to, silicon dioxide SiO 2 , polymer polymer, and silicon Si.
  • the external modulation laser of the embodiment uses a beam splitter to split the optical wave outputted by the laser into multiple optical waves to realize the output of the multiple optical waves. Further, in this embodiment, an amplifier array is used, and each optical wave is separately amplified, thereby achieving Separate power control for each light wave.
  • the embodiment adopts the PLC technology to integrally package the devices in the external modulation laser, thereby reducing the manufacturing cost, reducing the size of the external modulation laser, and facilitating the support of more ports in the same line card.
  • FIG. 3 is a schematic structural diagram of a specific implementation of the external modulation laser shown in FIG. 2, as shown in FIG. 3, specifically including: semiconductor optical amplifier RSOA, reflective filter, optical splitter, multimode interferometer MMI, optical amplifier SOA Array and Modulator (MOD) array; wherein the semiconductor optical amplifier RSOA consists of a total reflection mirror and a gain medium, the reflection filter consists of a total reflection mirror and a 1577 nm thin film filter, a semiconductor optical amplifier RSOA and a reflective filter.
  • the chip constitutes the laser oscillating cavity of the laser.
  • the light output by the laser is led out by the splitter and enters the MMI of the multimode interferometer. It is divided into multiple optical waves, for example, divided into four optical waves. Each optical wave is amplified and modulated by the optical amplifier SOA array and the modulator MOD array, respectively. Road light signal output.
  • the modulator MOD includes but is not limited to an electroabsorption modulator or an MZ interferometric modulator, if the modulator MOD uses an MZ interferometric modulator, and the PLC chip uses silicon Si, MZ interference type
  • the modulator can be fabricated directly in the PLC chip without the need for remixing.
  • the array of optical amplifier SOAs and the array of modulators MOD may be coupled together or separately.
  • each device in the above externally modulated laser is integrated and packaged in a PLC chip.
  • the semiconductor optical amplifier RSOA can be coupled to the upper and lower sides of the passive waveguide of the PLC chip through the flip chip Flip chip, or the edge coupling can be performed by the end face coupling Butt coupling.
  • the 1577nm thin film filter can be directly attached to the edge of the PLC chip, perpendicular to the output waveguide, or the lens can be added between the 1577nm thin film filter and the PLC chip to improve the coupling efficiency.
  • the external modulation laser of the embodiment adopts a temperature-insensitive 1577 nm thin film filter, and the light emitted from the gain medium is filtered to generate a light wave of 1577 nm wavelength, which is divided into multiple optical waves and output to the amplifier array and the modulator after passing through the optical splitter.
  • the array performs amplification and modulation processing on each of the optical waves to achieve separate power control and optical power output for each optical wave.
  • the external modulation laser of this embodiment does not need to install an additional chiller, which reduces the power consumption of the externally modulating laser, and the external modulation laser of the embodiment can realize the wavelength and power even in the case where the temperature environment varies greatly.
  • the stable output improves the stability of the working performance of the externally modulated laser.
  • the embodiment adopts the PLC technology to integrally package the devices in the external modulation laser, thereby reducing the manufacturing cost, simplifying the packaging process, reducing the size of the external modulation laser, and facilitating the support of more ports in the same line card.
  • FIG. 4 is a schematic structural diagram of still another specific implementation of the external modulation laser shown in FIG. 2, as shown in FIG. 4, specifically including: a semiconductor optical amplifier RSOA, a reflective filter, a multimode interferometer MMI, an optical amplifier SOA array, and Modulator MOD array;
  • RSOA semiconductor optical amplifier
  • MMI multimode interferometer
  • SOA array optical amplifier
  • Modulator MOD array Modulator MOD array
  • the semiconductor optical amplifier RSOA is composed of a partial mirror and a gain medium
  • the reflective filter is composed of a total reflection mirror and a 1577 nm thin film filter
  • the reflective filter and the RSOA are directly aligned
  • the semiconductor optical amplifier RSOA and the reflective filter The laser oscillating cavity that makes up the laser.
  • the light from the gain medium in the semiconductor optical amplifier RSOA is filtered by a thin film filter of 1577 nm to generate a light wave with a wavelength of 1577 nm.
  • the total reflection mirror in the reflective filter is totally reflected back to the gain medium, and part of the light wave is transmitted through the portion of the RSOA.
  • the mirror is output to the multimode interferometer MMI and is divided into multiple optical waves, for example, divided into four optical waves. Each optical wave is amplified and modulated by the optical amplifier SOA array and the modulator MOD array, and then divided into four optical signals for output.
  • the array of optical amplifier SOA and the array of modulators MOD may be coupled together or separately.
  • FIG. 5 is a schematic structural diagram of still another specific implementation of the external modulation laser shown in FIG. 2, as shown in FIG. 5, specifically including: an RSOA array, a reflective filter, and a modulator MOD array.
  • the RSOA array includes at least two RSOAs, each of which consists of a partial mirror and a gain medium.
  • the reflective filter consists of a total reflection mirror and a 1577 nm thin film filter.
  • the reflective filter and the RSOA array are directly aligned, RSOA.
  • the array and the reflective filter form a laser. It should be noted that in order to satisfy the output of the multi-path light wave, the reflective filter is composed of a large-area total reflection mirror and a large-area 1577 nm thin film filter.
  • the light from the gain medium in each RSOA of the RSOA array is filtered by a 1577 nm thin film filter to generate a light wave with a wavelength of 1577 nm.
  • the total reflection mirror in the reflective filter is totally reflected back to the gain medium, and a part of the light wave passes through the RSOA.
  • the partial mirror output is formed to form an output of the multi-path light wave, and after being modulated by the modulator MOD array, the multi-channel optical signal is output.
  • FIG. 6 is a schematic structural diagram of still another specific implementation of the external modulation laser shown in FIG. 2, as shown in FIG. 6, specifically including: a Bragg grating, an RSOA array, and a modulator MOD array.
  • the pass band of the Bragg grating can be specifically set according to the wavelength of the optical wave actually required.
  • the PLC chip of this embodiment is silicon dioxide SiO 2 , and the Bragg grating can be directly fabricated in the PLC chip.
  • the RSOA array includes at least two RSOAs, each RSOA is composed of a partial mirror and a gain medium, the RSOA array is located between the Bragg grating and the modulator MOD array, and the Bragg grating is reflective.
  • Bragg grating consisting of a total reflection mirror and a Bragg grating.
  • the light from the gain medium in each RSOA of the RSOA array passes through a 1577 nm Bragg grating to generate a light wave with a wavelength of 1577 nm. After passing through the total reflection mirror coupled with the Bragg grating, all of the light is reflected back to the gain medium, and a part of the light wave passes through the RSOA.
  • the partial mirror output in the middle forms the output of the multi-path light wave, and after being modulated by the modulator MOD array, the multi-channel optical signal is output.
  • the RSOA array comprises at least two RSOAs, the RSOA consisting of a total reflection mirror and a gain medium, the Bragg grating being located between the RSOA array and the modulator MOD array.
  • the light from the gain medium in each RSOA of the RSOA array passes through a 1577 nm Bragg grating to generate a light wave output with a wavelength of 1577 nm, thereby forming an output of multiple light waves.
  • Each light wave is modulated by a modulator MOD array, and is divided into multiple paths of light. Signal output.
  • the external modulation laser of the present embodiment adopts a temperature-insensitive 1577 nm filter, and the light emitted from the gain medium is filtered to generate a light wave having a wavelength of 1577 nm, and is subjected to splitting, amplifying, and modulating processing to form a stable multi-path optical power. Output.
  • the external modulation laser of the present embodiment does not need to install an additional refrigerator, the power consumption of the external modulation laser is reduced, and the problem that the existing external modulation laser has large power consumption is solved, even if the temperature environment changes greatly.
  • stable optical power output can also be achieved, and the stability of the operational performance of the externally modulated laser is improved.
  • the above embodiments all adopt PLC technology to integrate and package the devices in the external modulation laser, which reduces the manufacturing cost, reduces the size of the external modulation laser, and facilitates supporting more ports in the same line card.
  • another embodiment of the present invention provides a passive optical communication device, including but not limited to an optical line terminal or an optical network unit, where the optical line terminal includes the foregoing implementation.
  • a passive optical communication device including but not limited to an optical line terminal or an optical network unit, where the optical line terminal includes the foregoing implementation.
  • an external modulation laser is provided, and the optical network unit includes the external modulation laser provided by the above embodiments.
  • another embodiment of the present invention provides a passive optical network system, where the system includes an optical line terminal located at a central control station and a plurality of optical network units located on the user side, where Passive optical network communication between the optical line terminal and the optical network unit, the optical line terminal includes an external modulation laser for providing a data modulation transmission function, the external modulation laser is an external modulation laser provided by the above embodiment; An externally modulated laser that provides a data modulation transmission function, which is an externally modulated laser provided by the above embodiments.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Communication System (AREA)

Abstract

Cette invention concerne un laser à modulation externe, un appareil et un système passif de communication optique. Ledit laser à modulation externe comprend un laser qui comprend un miroir partiellement réfléchissant (113), un milieu à gain (112) et un filtre (114). Ledit miroir partiellement réfléchissant (113), le milieu à gain (112) et le filtre (114) forment une cavité d'oscillation laser du laser. Le filtre (114) est utilisé pour filtrer la lumière du milieu à gain (112) afin de conférer une longueur d'onde prédéterminée à une lumière. Le miroir partiellement réfléchissant (113) est utilisé pour transmettre une partie de la lumière à longueur d'onde prédéterminée à un modulateur conçu pour moduler de manière externe et réfléchir vers le milieu à gain (112) l'autre partie de la lumière à longueur d'onde prédéterminée. L'invention permet de résoudre le problème de la grande consommation de courant des lasers à modulation externe.
PCT/CN2012/079780 2012-08-07 2012-08-07 Laser à modulation externe, appareil et système passif de communication optique WO2014022971A1 (fr)

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PCT/CN2012/079780 WO2014022971A1 (fr) 2012-08-07 2012-08-07 Laser à modulation externe, appareil et système passif de communication optique
CN201280000945.2A CN102906949B (zh) 2012-08-07 2012-08-07 外调制激光器、无源光通信设备及系统

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PCT/CN2012/079780 WO2014022971A1 (fr) 2012-08-07 2012-08-07 Laser à modulation externe, appareil et système passif de communication optique

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CN1930748A (zh) * 2004-03-29 2007-03-14 英特尔公司 用于外部腔可调激光器的半集成设计
CN101013795A (zh) * 2005-04-01 2007-08-08 K2光电子公司 模拟外腔激光器
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