WO2014012660A3 - Method for operating a microlithographic projection exposure apparatus - Google Patents
Method for operating a microlithographic projection exposure apparatus Download PDFInfo
- Publication number
- WO2014012660A3 WO2014012660A3 PCT/EP2013/002111 EP2013002111W WO2014012660A3 WO 2014012660 A3 WO2014012660 A3 WO 2014012660A3 EP 2013002111 W EP2013002111 W EP 2013002111W WO 2014012660 A3 WO2014012660 A3 WO 2014012660A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- control commands
- actuation unit
- exposure apparatus
- projection exposure
- mirror substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
Abstract
A microlithographic projection exposure apparatus (10) configured in particular for EUV light includes a projection objective (26) having an adaptive mirror (M2) comprising, for its part, a mirror substrate (44) and an actuation unit (42) for deforming the mirror substrate (44). Using imaging aberrations measured previously, a set of control commands for the actuation unit (42) is determined, and when said set of control commands is transferred to the actuation unit (42), the mirror substrate (44) is deformed such that the imaging aberrations measured previously are corrected. Said set of control commands is stored in a nonvolatile data memory (66) and transferred to the actuation unit (42). If the operation of the projection exposure apparatus is interrupted after relatively long operating durations, the correction state previously present can be rapidly reestablished by simply reloading the stored control commands, without a renewed measurement of the imaging aberrations of the projection objective (26) being required.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261673778P | 2012-07-20 | 2012-07-20 | |
US61/673,778 | 2012-07-20 | ||
DE201210212757 DE102012212757A1 (en) | 2012-07-20 | 2012-07-20 | METHOD FOR OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE PLANT |
DE102012212757.7 | 2012-07-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014012660A2 WO2014012660A2 (en) | 2014-01-23 |
WO2014012660A3 true WO2014012660A3 (en) | 2014-04-17 |
Family
ID=49879911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/002111 WO2014012660A2 (en) | 2012-07-20 | 2013-07-16 | Method for operating a microlithographic projection exposure apparatus |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102012212757A1 (en) |
WO (1) | WO2014012660A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014219755A1 (en) | 2013-10-30 | 2015-04-30 | Carl Zeiss Smt Gmbh | Reflective optical element |
DE102015201020A1 (en) * | 2015-01-22 | 2016-07-28 | Carl Zeiss Smt Gmbh | Projection exposure apparatus with manipulator and method for controlling a projection exposure apparatus |
DE102016201564A1 (en) | 2016-02-02 | 2017-08-03 | Carl Zeiss Smt Gmbh | Method for producing a reflective optical element and reflective optical element |
DE102017205405A1 (en) | 2017-03-30 | 2018-10-04 | Carl Zeiss Smt Gmbh | Mirror, in particular for a microlithographic projection exposure apparatus |
CN111051990B (en) | 2017-09-04 | 2024-01-26 | Asml荷兰有限公司 | Heating system for an optical component of a lithographic apparatus |
DE102020201723A1 (en) | 2020-02-12 | 2021-08-12 | Carl Zeiss Smt Gmbh | Projection exposure system with a thermal manipulator |
DE102022114969A1 (en) | 2022-06-14 | 2023-12-14 | Carl Zeiss Smt Gmbh | Method for heating an optical element and optical system |
DE102022114974A1 (en) | 2022-06-14 | 2023-12-14 | Carl Zeiss Smt Gmbh | Method for heating an optical element and optical system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020011573A1 (en) * | 2000-07-13 | 2002-01-31 | Van Dijsseldonk Antonius Johannes Josephus | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US20060008716A1 (en) * | 2004-07-08 | 2006-01-12 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
DE102010003938A1 (en) * | 2009-05-04 | 2010-10-14 | Carl Zeiss | Optical arrangement i.e. projection illumination system, operating method for microlithography, involves illuminating lens with light, such that non-uniform temperature distribution is produced in lens to correct defect of system |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10000191B8 (en) | 2000-01-05 | 2005-10-06 | Carl Zeiss Smt Ag | Project exposure system of microlithography |
US6880942B2 (en) | 2002-06-20 | 2005-04-19 | Nikon Corporation | Adaptive optic with discrete actuators for continuous deformation of a deformable mirror system |
US6989922B2 (en) | 2002-06-21 | 2006-01-24 | Nikon Corporation | Deformable mirror actuation system |
US6840638B2 (en) * | 2002-07-03 | 2005-01-11 | Nikon Corporation | Deformable mirror with passive and active actuators |
DE10360414A1 (en) | 2003-12-19 | 2005-07-21 | Carl Zeiss Smt Ag | EUV projection lens and method for its production |
US7125128B2 (en) | 2004-01-26 | 2006-10-24 | Nikon Corporation | Adaptive-optics actuator arrays and methods for using such arrays |
DE102008046699B4 (en) * | 2008-09-10 | 2014-03-13 | Carl Zeiss Smt Gmbh | Imaging optics |
CN102472974B (en) * | 2009-07-17 | 2014-05-07 | 卡尔蔡司Smt有限责任公司 | Microlithographic projection exposure apparatus and method of measuring a parameter related to an optical surface contained therein |
DE102011084117A1 (en) | 2011-10-07 | 2013-04-11 | Carl Zeiss Smt Gmbh | Reflective optical element for the EUV wavelength range, method for generating and correcting such an element, projection objective for microlithography with such an element and projection exposure apparatus for microlithography with such a projection objective |
-
2012
- 2012-07-20 DE DE201210212757 patent/DE102012212757A1/en not_active Withdrawn
-
2013
- 2013-07-16 WO PCT/EP2013/002111 patent/WO2014012660A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020011573A1 (en) * | 2000-07-13 | 2002-01-31 | Van Dijsseldonk Antonius Johannes Josephus | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US20060008716A1 (en) * | 2004-07-08 | 2006-01-12 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
DE102010003938A1 (en) * | 2009-05-04 | 2010-10-14 | Carl Zeiss | Optical arrangement i.e. projection illumination system, operating method for microlithography, involves illuminating lens with light, such that non-uniform temperature distribution is produced in lens to correct defect of system |
Also Published As
Publication number | Publication date |
---|---|
DE102012212757A1 (en) | 2014-01-23 |
WO2014012660A2 (en) | 2014-01-23 |
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