WO2014001125A1

WO2014001125A1 - Optoelectronic component device and method for producing an optoelectronic component device

Info

Publication number: WO2014001125A1
Application number: PCT/EP2013/062522
Authority: WO
Inventors: Markus Boss; Ion Stoll
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2012-06-28
Filing date: 2013-06-17
Publication date: 2014-01-03
Also published as: DE102012211217A1

Abstract

In various embodiments, an optoelectronic component device (100, 200, 300, 400, 500) is provided, the optoelectronic component device (100, 200, 300, 400, 500) having: an optoelectronic component (104); a wavelength converter (106) on or above the optoelectronic component (104); and at least one colour converter (108, 202, 302, 404, 502), which is designed to modify an electromagnetic radiation, wherein the electromagnetic radiation has a useful wavelength range and at least one additional wavelength range, wherein the at least one colour converter (108, 202, 302, 404, 502) has a first carrier matrix and a colourant, wherein the colourant is distributed in the first carrier matrix, and wherein the colourant is designed to absorb electromagnetic radiation at least in a sub-range of the additional wavelength range of the electromagnetic radiation.

Description

Besehreibung

Optoelectronic component device and method for producing an optoelectronic component device

In various embodiments, a

Optoelectronic component device and a method for producing an optoelectronic

Component device provided.

This patent application claims the priority of German Patent Application 10 2012 211 217.0, the disclosure of which is hereby incorporated by reference. Forming electromagnetic radiation of a second wavelength from electromagnetic radiation of a first wavelength is called wavelength conversion.

Wavelength conversion is in optoelectronic

Used for color conversion devices, for example, to facilitate the generation of white light

for example, in white light-emitting diode flashing lights or white light-emitting diode lamps. In this case, for example, a blue light, such as a light emitting diode (light

LED diode), converted into a yellow light. The color mixture of blue light and yellow light forms white light.

The wavelength conversion can be realized for example by means of a phosphor which is formed on or above the LED.

Fluorescent layers or phosphor shaped bodies can often have a color, for example yellow. The color of the phosphor layers or phosphor moldings in applications can damage the aesthetic appearance of the product, for example in LED flashing lights or

Led Lamps . In a conventional method for compensating the

Impairing the appearance of an LED with

Phosphor layer, a white diffuser material, such as a Ti02-litter layer, on or over the

Fluorescent applied to evoke the aesthetic white impression of the LED. However, the increased scattering in the diffuser can lead to a loss of brightness of the emitted electromagnetic radiation.

In various embodiments, a

Optoelectronic component device and a method for producing an optoelectronic

Device device provided with which it is possible to change the color appearance of optoelectronic devices, without the intensity of the

electromagnetic radiation in the technically relevant

Wavelength range that is emitted or absorbed by the optoelectronic device to reduce.

In the context of this description, an organic substance, regardless of the respective state of matter, in chemically uniform form, by

characteristic physical and chemical properties characterized compound of the carbon. Furthermore, in the context of this description, an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter

present, characterized by characteristic physical and chemical properties of the compound without

Carbon or simple carbon compound can be understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, with compounds containing carbon and free of carbon, are understood. In the context of this description, the term "substance" encompasses all of the abovementioned substances, for example an organic substance, an inorganic substance, and / or a hybrid substance Furthermore, in the context of this description, a substance mixture may be understood to mean components of two or more containing various substances whose

For example, components are very finely divided. As a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s). The term "material" can be used synonymously with the term "substance". As the phosphor can be understood a substance that

lossy electromagnetic radiation

Wavelength in electromagnetic radiation of others

(longer) wavelength, for example by means of phosphorescence or fluorescence. The energy difference between absorbed electromagnetic radiation and emitted electromagnetic radiation may be expressed in phonons, i. Heat, and / or be converted by emission of electromagnetic radiation having a wavelength proportional to the energy difference.

As the dye, a chemical compound or a pigment can be understood that can stain other substances or mixtures, i. changes the appearance of the substance or mixture of substances.

The term "dyeing" may also be understood to mean "color changing" by means of a dye, wherein the outer color of a substance may be changed color without staining the substance, i. the "color change" of a substance can not always have a "coloring" of the substance.

In the context of this description may have little or no technical relevance of a wavelength or a Wavelength range of electromagnetic radiation

Optoelectronic devices are understood, in which the intensity of the optoelectronic component

has absorbed or emitted electromagnetic radiation of a wavelength or a wavelength range less than about 5% of the intensity of the intensity maximum of the wavelength spectrum.

In the context of this description, the useful wavelength range is the wavelength range

Electromagnetic radiation are understood, which has no technical relevance for the technical application of an optoelectronic device. The electromagnetic radiation can be emitted or absorbed by the optoelectronic component.

For optoelectronic components, for example

Light-emitting diodes, for example as flashing lights of

Mobile phones with digital camera or digital cameras, the wavelength spectrum, for example, for wavelengths less than 400 nm and greater than about 650 nm, technically not at all or only slightly relevant, since the camera sensors for this wavelength range often have no sensitivity.

The wavelength range from approximately 400 nm to approximately 650 nm can therefore be understood as a useful wavelength range for these applications. The

Wavelength ranges less than about 400 nm and / or greater than about 650 nm may be understood as additional wavelength ranges for these applications.

In various embodiments, a

Optoelectronic component device provided, the optoelectronic component device comprising: an optoelectronic device; a wavelength converter on or above the optoelectronic device; and

at least one color converter arranged to change an electromagnetic radiation, wherein the

electromagnetic radiation has a useful wavelength range and at least one further wavelength range; wherein the at least one color converter comprises a first carrier matrix and a dye; wherein the dye is distributed in the first support matrix; and wherein the dye is adapted to absorb electromagnetic radiation at least in a portion of the further wavelength range of the electromagnetic radiation.

In one embodiment, the optoelectronic component may further comprise a carrier, wherein the optoelectronic component is formed above or on the carrier.

In one embodiment, the carrier as a substance or

Substance mixture have a substance or be formed from the group of substances: an organic substance, a

inorganic substance, an organic-inorganic hybrid

Material .

The carrier may comprise or be formed from an electrically conductive, semiconducting or electrically insulating substance.

In yet another embodiment, the carrier may comprise a substance or an alloy from the group of substances: iron, steel, aluminum, copper, silver, gold, palladium, magnesium, titanium, platinum, nickel, tin, zinc. In yet another embodiment, the carrier may include or be formed from the group of

Fabrics: glass, quartz glass, sapphire, silicon carbide, graphene, diamond. In yet another embodiment, the carrier can comprise or be formed from the group of substances

Semiconductor materials: elemental semiconductors: silicon,

Germanium, tin, carbon compounds, for example fullerenes, boron, selenium, tellurium; Compound semiconductors: indium, gallium, arsenic, phosphorus, antimony, nitrogen, zinc, cadmium, beryllium, mercury; Organic semiconductors: tetracene, pentacene, phthalocyanines, polythiophene, PTCDA, MePTCDI, Quinacridone, acridone, indanthrone, flavanthrone, perinone, Alq3; as well as mixed systems: polyvinylcarbazole, TCNQ complexes.

In yet another embodiment, the carrier may include or be formed from the group of

Substances: polyolefins (eg high or low density polyethylene (PE) or polypropylene (PP)),

Polyvinyl chloride (PVC), polystyrene (PS), polyester,

Polycarbonate (PC), polyethylene terephthalate (PET),

Polyethersulfone (PES), polyethylene naphthalate (PEN),

Polymethyl methacrylate (PMMA), polyimide (PI), polyether ketones (PEEK), polyamides, for example polyphthalamide (PPA), polycyclohexylenedimethylene terephthalate (PCT),

Silicones, epoxies or a liquid crystalline polymer

(liquid crystalline polymer - LCP).

In yet another embodiment, the carrier may be formed, for example, as a printed circuit board.

In yet another embodiment, the carrier may be formed as a planar substrate, for example a film.

In yet another embodiment, the carrier may have a geometrically complex shape, for example the shape of a

curved housing or as part of a curved housing.

In yet another embodiment, the optoelectronic

Component as an electromagnetic radiation

be arranged absorbing electronic component, such as a photodiode, for example

electromagnetic radiation in a range of about 200 nm to about 750 nm, for example in a range of about 300 nm to about 490 nm, for example in a range of about 350 nm to about 450 nm

detected. In yet another embodiment, the optoelectronic

Component be configured as an electromagnetic radiation emitting electronic component, such as a light emitting diode, for example, the electromagnetic

Radiation in a range of about 200 nm to about 750 nm, for example in a range of about 300 nm to about 490 nm, for example, in a range of about 350 nm to about 450 nm emitted.

In yet another embodiment, the wavelength converter may comprise a phosphor and a second carrier matrix, wherein the phosphor is distributed in the carrier matrix.

In yet another embodiment, the phosphor may comprise or form a substance as a substance or substance mixture

3+

be from the group of substances: Ce doped garnets like

3+

YAG: Ce and LuAG, for example, (Y, Lu) 3 (Al, Ga) 5O12: Ce;

2+ 2+

Eu doped nitrides, for example CaAlSiN3: Eu,

2+ 2+

(Ba, Sr) 2S15 8: Eu; Eu doped sulfide, SIONe, SiAlON,

2+

Orthosilicates, for example (Ba, Sr) 2S104: Eu;

Chlorosilicates, chlorophosphates, BAM

(Barium magnesium aluminate: Eu) and / or SCAP, halophosphate. In yet another embodiment, the second carrier matrix can comprise a substance or mixture of substances or can be formed from the group of substances: an epoxide, a silicone, a polycarbonate or a polyacrylate.

In yet another embodiment, the dye may comprise a substance or mixture of substances or be formed from the group of substances: an organic dye, an inorganic dye, a nanoparticle or pigment.

In one embodiment, the dye may have an organic substance or be formed from the group of organic dye classes or dye derivatives:

Acridine, acridone, anthraquinone, anthracene, cyanine, dansyl, squaryllium, spiropyrane, boron-dipyrromethane (BODIPY), Perylenes, pyrenes, naphthalenes, flavins, pyrroles, porphrines and their metal complexes, diarylmethane, triarylmethane, nitro, nitroso, phthalocyanine and their metal complexes, quinones, azo, indophenol, oxazines, oxazones, thiazines, thiazoles,

Xanthene, fluorenes, flurones, pyronines, rhodamines, coumarins, metallocenes.

In one embodiment, the dye may comprise or be formed from the group of inorganic dye classes, inorganic dye derivatives: transition metals, rare earth oxides, sulfides, cyanides, iron oxides, zirconium silicates, bismuth vanadate, an inorganic substance.

Chromium oxides. In one embodiment, the dye may comprise or be formed from nanoparticles, for example

Carbon, for example carbon black; Gold, Silver, Platinum,

Semiconductor nanoparticles such as InP, ZnS, or CdS. In yet another embodiment, the dye may be distributed in the second carrier matrix of the wavelength converter. The wavelength converter can then be called color-changing

Wavelength converter be set up. An additional color converter, i. without phosphor, may be optional in the case.

In yet another embodiment, at least one colorant may have a mass fraction of dye on the first carrier matrix and dye mixture in a range of about 0.001% to 70%, for example, about 0.1% to about 10%.

In yet another embodiment, the dye may be a

Absorption of electromagnetic radiation in the

Wavelength range less than about 400 nm and / or greater about 650 nm. But it can also be selected dyes that absorb in other wavelength ranges, insofar as the

Wavelengths has no or only a small technical relevance for the electromagnetic radiation emitted by the optoelectronic component and / or the

Wavelength converter is emitted.

The effect of the dye can be used as reducing the intensity of electromagnetic radiation and / or as wavelength conversion in at least one

Wavelength range are understood to be the outer

Appearance is changed, for example, the

Wavelength converter and / or the optoelectronic

Component. In yet another embodiment, the dye may be a

Absorption of electromagnetic radiation with a

Half width (FWHM) of the width half maximum

Maximum absorption maximum of about 80 nm. In yet another embodiment, the color converter can be set up such that the difference in color valence between the color valence of the wavelength converter and the color valence of the carrier in the direct light path of the color converter is reduced.

In this case, a direct light path can be understood as the optical path of electromagnetic radiation generated by the optoelectronic component and / or the optical path

Wavelength converter is absorbed or emitted. The electromagnetic radiation is not reflected on the optical path. In other words: electromagnetic radiation can only be transmitted in the direct light path of layers, wherein the electromagnetic radiation from a layer can also be transmitted broken.

In yet another embodiment, the optoelectronic

Component device further comprising a housing, wherein the housing the optoelectronic device and the

Wavelength converter at least partially surrounds, wherein a part of the housing is formed in the optical path of the wavelength converter.

In yet another embodiment, a filler may be formed in the light path between the housing and the wavelength converter.

In yet another embodiment, the filler may comprise as a substance or mixture of substances or be formed from the group of substances: a phosphor, a dye, a gas, for example air or a noble gas, the substance or mixture of the first carrier matrix and / or the second carrier matrix.

In yet another embodiment, the filler can absorb in at least one other wavelength range

Have electromagnetic radiation as the dye. In yet another embodiment, the housing may be as a

Color converter and / or an optical lens to be set up.

In yet another embodiment, a color converter may be formed in the direct light path of the optoelectronic component and / or in the direct light path of the wavelength converter between the housing and the carrier.

In yet another embodiment, a color converter may be formed outside the housing in the light path of the optoelectronic component and / or in the light path of the wavelength converter.

In yet another embodiment, a color converter may be formed in the direct light path of the optoelectronic component and / or in the direct light path of the wavelength converter on or above the housing. In yet another embodiment, a color converter in the direct light path of the optoelectronic component and / or in the direct light path of the wavelength converter as a

be formed color-changing potting material.

In yet another embodiment, a color converter may be formed in the direct light path of the optoelectronic component and / or in the direct light path of the wavelength converter as a color-changing lens.

In yet another embodiment, a color converter may be formed in the light path of the optoelectronic component and / or in the light path of the wavelength converter as a color-changing reflector.

In yet another embodiment, a color converter may be formed in the direct light path of the optoelectronic component and / or in the direct light path of the wavelength converter as a color-changing coating.

In yet another embodiment, the first carrier matrix as a substance or mixture of substances may comprise or be formed from the group of substances: an epoxide, a silicone, a polycarbonate or a polyacrylate.

In yet another embodiment, the second carrier matrix may comprise or be formed from the same substance or the same substance mixture as the first carrier matrix. In yet another embodiment, the optoelectronic

Component device be configured as a flashing light.

In one embodiment, the shape of the color converter for graphically patterning the surface of the

optoelectronic component and / or the

Wavelength converters may be formed, for example as Lettering, for example, a serial number, a type designation, a brand name, a promotional letter or train

similar. In various embodiments, there is provided a method of fabricating an optoelectronic device device apparatus, the method comprising: forming an optoelectronic device; Forming a

Wavelength converter on or above the optoelectronic device; and forming at least one color converter suitable for modifying electromagnetic radiation, wherein the electromagnetic radiation has a useful wavelength range and at least one further wavelength range; wherein the at least one color converter as a first

Carrier matrix and a dye is formed; wherein, prior to forming the color converter, the dye is dispersed in the carrier matrix; and wherein the dye

is adapted to absorb electromagnetic radiation at least in a portion of the further wavelength range of the electromagnetic radiation.

In an embodiment of the method, the method may further comprise providing a carrier, wherein the optoelectronic component is above or on the carrier

is trained.

In one embodiment of the method, the carrier can comprise or be formed from a substance or mixture of substances from the group of substances: an organic substance, an inorganic substance, an organic-inorganic hybrid substance.

In yet another embodiment, the carrier may comprise a substance or an alloy from the group of substances: iron, Steel, aluminum, copper, silver, gold, palladium, magnesium, titanium, platinum, nickel, tin, zinc.

In yet another embodiment of the method, the carrier may comprise or be formed from a substance

Group of substances: glass, quartz glass, sapphire, silicon carbide, graphene, diamond.

Group of Semiconductor Materials: Elemental Semiconductors:

Silicon, germanium, tin, carbon compounds,

for example, fullerenes, boron, selenium, tellurium;

Compound semiconductors: indium, gallium, arsenic, phosphorus, antimony, nitrogen, zinc, cadmium, beryllium, mercury; Organic semiconductors: tetracene, pentacene, phthalocyanines, polythiophene, PTCDA, MePTCDI, quinacridone, acridone,

Indanthrone, flavanthrone, perinone, Alq3; as well as mixed systems: polyvinylcarbazole, TCNQ complexes.

Group of substances: polyolefins (for example, high or low density polyethylene (PE) or polypropylene (PP)), polyvinyl chloride (PVC), polystyrene (PS), polyester,

Polycarbonate (PC), polyethylene terephthalate (PET),

Polyethersulfone (PES), polyethylene naphthalate (PEN),

Silicones, epoxies or a liquid crystalline polymer

(liquid crystalline polymer - LCP).

In yet another embodiment of the method, the carrier may be formed, for example, as a printed circuit board. In yet another embodiment of the method, the carrier may be formed as a planar substrate, for example a film. In yet another embodiment of the method, the carrier may have a geometrically complex shape, for example the shape of a curved housing or as part of a curved housing.

In yet another embodiment of the method, the

optoelectronic component as an electromagnetic

Radiation absorbing electronic component

be formed, for example, a photodiode. In yet another embodiment of the method, the

optoelectronic component as an electromagnetic

Radiation emitting electronic component can be formed, for example a light emitting diode. In yet another embodiment of the method, the

Wavelength converter with a phosphor and a second carrier matrix having formed, wherein the

Phosphor is distributed in the carrier matrix. In yet another embodiment of the method, the

Phosphor as a substance or mixture of substances have a substance

3+ or formed from the group of substances: Ce-doped garnets such as YAG: Ce and LuAG, for example (Y,

3+ 2+

Lu) 3 (Al, Ga) 5 O 12: Ce; Eu doped nitrides, for example

2+ 2+ 2+

CaAlSiN3: Eu, (Ba, Sr) 2 S15 8: Eu; Eu doped sulfide,

SIONe, SiAlON, orthosilicates, for example

2+

(Ba, Sr) 2S104: Eu; Chlorosilicates, chlorophosphates, BAM

(Barium magnesium aluminate: Eu) and / or SCAP, halophosphate.

In yet another embodiment of the method, the second carrier matrix can be a substance or mixture of substances

have or be formed from the group of Substances: an epoxy, a silicone, a polycarbonate or a polyacrylate.

In yet another embodiment of the method, the dye may comprise or be formed from a substance or mixture of substances from the group of substances: an organic dye, an inorganic dye, a nanoparticle.

Acridine, acridone, anthraquinone, anthracene, cyanine, dansyl, squaryllium, spiropyrane, boron-dipyrromethane (BODIPY), perylenes, pyrenes, naphthalenes, flavins, pyrroles, porphrines and their metal complexes, diarylmethane, triarylmethane, nitro, nitroso, phthalocyanine and their metal complexes , Quinone, azo, indophenol, oxazines, oxazones, thiazines, thiazoles,

Xanthene, fluorenes, flurones, pyronines, rhodamines, coumarins, metallocenes.

In one embodiment, the dye may have an inorganic substance or be formed therefrom from the group of inorganic dye classes, inorganic dye derivatives or inorganic dye pigments:

Transition metals, rare earth oxides, sulfides, cyanides, iron oxides, zirconium silicates, bismuth vanadate, chromium oxides.

In one embodiment, the dye may comprise or be formed from nanoparticles, for example

Carbon, such as carbon black, gold, silver, platinum,

Semiconductor nanoparticles such as InP, ZnS, or CdS.

In yet another embodiment of the process, at least one colorant having a mass fraction of dye on the first carrier matrix and dye mixture may range from about 0.001% to 70%, for example

about 0.1% to about 10%. In yet another embodiment of the method, the dye can be distributed in the second carrier matrix of the wavelength converter. The wavelength converter can then be set up as a color-converting wavelength converter. An additional color converter, ie without phosphor, may be optional in this case.

In yet another embodiment of the method, the dye can absorb electromagnetic radiation in one

Wavelength range less than about 400 nm and / or greater about 650 nm.

However, it is also possible to select dyes which absorb in other wavelength ranges insofar as

Wavelength converter is emitted or absorbed. In yet another embodiment of the method, the dye can absorb electromagnetic radiation in one

Wavelength interval from about 10 nm to about 100 nm. In yet another embodiment of the method, the

Color converters are formed such that the difference in color valence between the color valence of

Wavelength converter and the color valency of the carrier in the light path of the color converter is reduced.

In yet another embodiment of the method, the method may further comprise forming or applying a housing onto or over the carrier, wherein the housing supports the housing

Optoelectronic component and the wavelength converter at least partially surrounds, wherein a part of the housing is formed in the optical path of the wavelength converter. In yet another embodiment of the method, a filler can be formed in the direct light path of the optoelectronic component and / or in the direct light path of the wavelength converter between the housing and the wavelength converter.

In yet another embodiment of the method, the filler may comprise or be formed from the group of substances as a substance or mixture of substances: a phosphor, a dye, a gas, for example air or a noble gas, the substance or mixture of substances of the first carrier matrix and / or the second carrier matrix.

In yet another embodiment of the method, the filler in at least one other wavelength range a

Absorption of electromagnetic radiation as the dye.

In yet another embodiment of the method, the housing may be formed as a color converter and / or optical lens.

In yet another embodiment of the method, a

Color converter in the direct light path of the optoelectronic

Component and / or in the direct light path of the

Wavelength converter between housing and carrier

be formed.

In yet another embodiment of the method, a

Color converter in the direct light path of the optoelectronic

Component and / or in the direct light path of the

Wavelength converters are formed outside the housing.

In yet another embodiment of the method, a

Color converter in the direct light path of the optoelectronic

Component and / or in the direct light path of the Wavelength converters are formed on or above the housing.

In yet another embodiment of the method, a

Color converter in the direct light path of the optoelectronic component and / or in the direct light path of the

Wavelength converter as a color-changing

Potting material are formed.

In yet another embodiment of the method, a

Wavelength converters are formed as a color-changing lens.

In yet another embodiment of the method, a

Color converter in the optical path of the optoelectronic component and / or in the optical path of the wavelength converter can be formed as a color-changing reflector.

In yet another embodiment of the method, a

Wavelength converters are formed as a color-changing coating.

In yet another embodiment of the method, the first carrier matrix as a substance or mixture of substances may be a substance

or formed from the group of substances: an epoxy, a silicone, a polycarbonate or a polyacrylate.

In yet another embodiment of the method, the second carrier matrix can comprise or be formed from the same substance or the same substance mixture as the first one

Carrier matrix. In yet another embodiment of the method, a flash lamp can be formed by means of the method.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figure 1 is a schematic cross-sectional view of a

Optoelectronic component device, according to various embodiments;

Figure 2 is a schematic cross-sectional view of a

optoelectronic component device, according to various embodiments;

Figure 3 is a schematic cross-sectional view of a

optoelectronic component device, according to various embodiments;

Figure 4 is a schematic cross-sectional view of a

optoelectronic component device, according to various embodiments; and Figure 5 is a schematic cross-sectional view of a

Optoelectronic component device, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and in which is by way of illustration specific

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). Because components of embodiments in a number different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims. In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

FIG. 1 shows a schematic cross-sectional view of an optoelectronic component device according to FIG

different configurations.

Shown is a first type of embodiments 100 of an optoelectronic component device having a

optoelectronic component 104 on or above a carrier 102.

The carrier 102 may be electrically conductive, semiconductive or electrically insulating or configured. In one embodiment, the carrier 102 a

have inorganic substance or be formed from it. In yet another embodiment, the carrier 102 may comprise or be formed of a substance or an alloy from the group of substances: iron, steel, aluminum, copper, silver, gold, palladium, magnesium, titanium, platinum, nickel, tin, zinc, Glass, quartz glass, sapphire, silicon carbide, graphene, diamond.

In one embodiment, the carrier 102 may comprise a substance or a substance mixture from the group of

Semiconductor materials: elemental semiconductors: silicon,

Germanium, tin, carbon compounds, for example

Fullerenes, boron, selenium, tellurium; Compound semiconductors: indium, gallium, arsenic, phosphorus, antimony, nitrogen, zinc, cadmium, beryllium, mercury; Organic semiconductors: tetracene, pentacene, phthalocyanines, polythiophene, PTCDA, MePTCDI,

Quinacridone, acridone, indanthrone, flavanthrone, perinone, Alq3; as well as mixed systems: polyvinylcarbazole, TCNQ complexes.

In yet another embodiment, the carrier 102 may include a

have organic substance or be formed from it. In one embodiment, the backing 102 may comprise or be formed of an organic matter from the group of fabrics: polyolefins (eg, high or low density polyethylene (PE) or polypropylene (PP)),

Polyvinyl chloride (PVC), polystyrene (PS), polyester,

Polycarbonate (PC), polyethylene terephthalate (PET),

Polyethersulfone (PES), polyethylene naphthalate (PEN),

Silicones, epoxies or a liquid crystalline polymer

(liquid crystalline polymer - LCP).

In yet another embodiment, the carrier 102

be formed for example as a printed circuit board. In yet another embodiment, the carrier 102 may be formed as a planar substrate, for example a film. In yet another embodiment, the carrier 102 may be a

geometrically complex shape, for example, the shape of a curved housing or as part of a curved

Housing. The optoelectronic component 104 may be formed, for example, as a light emitting diode or photodiode, the

For example, electromagnetic radiation with a

Wavelength band in a range of about 200 nm to about 750 nm, for example in a range of about 300 nm to about 490 nm, for example, in a range of about 350 nm to about 450 nm emitted or

absorbed.

The optoelectronic component 104 may have a plurality of layers (not shown), which may be used, for example, as

Electrodes, carrier transport layers and / or

Emitter layers can be formed.

For example, the optoelectronic device 104 may have a width in a range of about 5 pm to about 5 mm, a height in a range of about 5 pm to about 500 pm, and a depth in a range of about 5 pm to about 5 mm , On or above the optoelectronic component 104, a wavelength converter 106 may be applied. Of the

Wavelength converter 106 may, for example, a

Phosphor distributed in a second carrier matrix,

have (not shown).

The phosphor of the wavelength converter 106 may be the

Convert wavelength of the electromagnetic radiation emitted by the optoelectronic component or is irradiated to the optoelectronic component (indicated schematically by means of the double arrow 110).

As a phosphor, the wavelength converter 106 may

3+

for example Ce-doped garnets such as YAG: Ce and LuAG,

3+ 2+

for example, (Y, Lu) 3 (Al, Ga) 50] _2: Ce; Eu endowed

2+ 2+

Nitrides, for example CaAlSiN3: Eu, (Ba, Sr) 2Si5 s: Eu

2+

Eu doped sulfides, SIONe, SiAlON, orthosilicates,

2+

for example, (Ba, Sr) 2 SiC> 4: Eu; Chlorosilicate,

Chlorophosphates, BAM (barium magnesium aluminate: Eu) and / or SCAP, halophosphate or be formed thereof.

The carrier matrix of the wavelength converter 106 may

For example, a silicone or an epoxy resin in

have cured state in which the phosphor is distributed.

The wavelength converter 106, for example, by means of an adhesive, such as a silicone or a

Epoxy, are glued to the optoelectronic device 104.

The assembly comprising the carrier 102, the

optoelectronic component 104 and the

Wavelength converter 106, for example, in one

Embodiment be designed as a wavelength-converting LED.

This assembly can be surrounded by a color converter, wherein the color converter may be formed as a color-changing potting material 108.

The color-changing potting material 108 may include a dye and a first support matrix (not shown) wherein the dye is dispersed in the support matrix, for example, mixed. The color-changing

Potting material 108 may be formed, for example, in a liquid state or a flowable state, for example by means of dispensing, surrounding the assembly become. The color-changing potting material 108 may be formed in the direct light path of the optoelectronic component 104. In this case, a direct light path can be understood as the optical path of electromagnetic radiation that is emitted by the optoelectronic component 104 and / or the

Wavelength converter 106 is absorbed or emitted. The electromagnetic radiation is not reflected on the optical path. In other words: electromagnetic radiation can only be transmitted in the direct light path of layers, with the electromagnetic radiation also being refracted on the direct light path of a layer

can be transmitted.

The first carrier matrix may comprise, for example, an epoxide, a silicone, a polycarbonate or a polyacrylate.

Xanthene, fluorenes, flurones, pyronines, rhodamines, coumarins, metallocenes.

Transition metals, rare earth oxides, sulfides, cyanides, iron oxides, zirconium silicates, bismuth vanadate, chromium oxides. In one embodiment, the dye can comprise or be formed from nanoparticles or pigments, for example carbon, for example carbon black; Gold, Silver, Platinum,

Semiconductor nanoparticles such as InP, ZnS, or CdS.

The selection of a dye can by means of a

narrow-band absorption, a broad emission and a high extinction coefficient. In this case, a narrow-band absorption can be understood as meaning an absorption of electromagnetic radiation having a half-width of the absorption maximum of at most approximately 80 nm. As a broad emission can be an emission

electromagnetic radiation having a half-width of the emission maximum of at least about 80 nm. The extinction coefficient may be as a

Proportionality constant of the ratio by means of a dye attenuated electromagnetic radiation of a wavelength with respect to incident electromagnetic radiation to be understood.

A high extinction coefficient can be a value larger

5 -1 -1

than about 10 L moles cm.

The narrow band absorption may be formed, for example, in a wavelength range of about 650 nm to about 1200 nm, or, for example, in a range of about 250 nm to about 400 nm.

Wavelengths has no or little technical relevance to the electromagnetic radiation, the from the optoelectronic component 104 and / or the

Wavelength converter 106 is emitted.

For LED applications, for example as flashlight of mobile phones with digital camera or digital cameras, the wavelength spectrum, for example, for wavelengths greater than about 650 nm, technically not at all or only slightly relevant because the camera sensors for this

Wavelength range often have no sensitivity.

The electromagnetic absorbed by the dye

Radiation (indicated by the arrow 110) therefore has little or no effect on the intensity or brightness of the LED emitted

electromagnetic radiation. By means of the electromagnetic radiation absorbed by the dye, the visual appearance of the LED can be changed, for example, from the yellow color of a wavelength converter 106 to a dark blue or violet color by means of the

Dye.

Wavelength range are understood.

The dye may have a mass fraction of the carrier matrix with dye in a range of about 0.001% to about 70%, for example about 0.001% to about 20%. The proportion by weight may be dependent on the selected dye, the substance or mixture of substances of the first carrier matrix, the thickness and the arrangement of the color converter with respect to the wavelength converter 106. In one embodiment, the shape of the color converter for graphically patterning the surface of the optoelectronic component and / or the wavelength converter may be formed, for example as a lettering, for example as

Serial number, type designation, brand name, advertising letter or similar.

FIG. 2 shows a schematic cross-sectional view of an optoelectronic component device according to FIG

various embodiments.

The optoelectronic component 104, the

Wavelength converter 106 and the color-changing

Potting material 202 may be encapsulated by means of a housing 206 and the carrier 102 against harmful substances and / or mechanical damage. The housing 206 can be used for the electromagnetic radiation emitted by the

optoelectronic component 104 and / or the

Wavelength converter 106 is absorbed or emitted, be formed translucent.

The term "translucent" can be used in various

Be understood embodiments that a substance is transparent to light, for example for that of the

Optoelectronic device generated or absorbed

Light, for example one or more

Wavelength ranges, for example, for light in one

Wavelength range of the visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). For example, the term "translucent housing" in different

Embodiments to understand that substantially all of the coupled into the housing amount of light is also coupled out of the housing, wherein a portion of the light can be scattered here. The color-changing potting material 202 may include the optoelectronic device 104 and the

Wavelength converter 106 at least partially surrounded, for example in the light path 110, for example by means

Pouring a Dispension of the potting material by means of a mold.

In a further embodiment, the shape of the

color-changing potting material 202 may be formed after forming the color-changing potting material 202, for example by means of removing and adding the carrier matrix with dye. In one embodiment, the color-changing

Potting material 202 have a curved surface. A color-changing potting material 202 with a curved surface may also be referred to as a color-changing lens 202. For example, a color-changing lens 202 may be in the form of and act as a color-modifying focusing lens 202, a color-changing dispersing lens 202, and / or a color-changing Fresnel lens 202.

A domed surface similar to a condenser lens can be obtained, for example, by means of the surface tension of the substance or mixture of the support matrix with dye of the

Potting material to be formed.

In one embodiment of the housing 206, the housing 206 may be formed in the form of an optical lens,

For example, a converging lens 206, a diverging lens 206, and / or a Fresnel lens 206.

The housing 206 may comprise or be formed from a substance or a mixture of substances from the group of

Fabrics: a polycarbonate, a polyacrylate, a silicone, an epoxy. Between the housing 206 and the color-changing

Potting material 202, a filler 204 may be formed. In one embodiment, the filler 204 may include or be formed from a gas or gas mixture.

for example, air or a noble gas.

In one embodiment, the filler 204 may be the same or similar substance or the same or a different material

have similar substance mixture as the first carrier matrix of the color-changing potting material 202 or be formed therefrom. In one embodiment, the filler 204 may be the same or similar substance or the same or a different material

In one embodiment, the filler 204 may comprise or be formed from the same or a similar phosphor as the phosphor of the wavelength converter 106. In one embodiment, the filler 204 may be the same as or the same as the second carrier matrix of the wavelength converter 106 In one embodiment, the filler 204 may comprise or be formed from a different dye than the dye

Dye of the color-changing potting material 202. The other dye, for example, absorb another, technically not relevant wavelength range. 3 shows a schematic cross-sectional view of an optoelectronic component device according to FIG

various embodiments. Deviant or in addition to the different ones

Embodiments of the descriptions of FIG. 1 and / or FIG. 2, the colorant of a color converter may be distributed in the housing 206, i. The color converter can be considered a

color-changing housing 302 may be formed.

The dye can be distributed in the substance or substance mixture of the color-changing housing 302 in a liquid or flowable state before the

color changing housing 302 is formed. By means of a color-changing housing 302 can in a simple way the process of subsequent application of a

color-changing layer, for example, a conventional Ti02-scattering layer, the wavelength converter 106 are omitted.

The region 304 between color-changing housing 302, carrier 102, optoelectronic device 104, and

Wavelength converter 106 may comprise a further color converter 108, 202 and / or a filler 204, according to one of the embodiments of the description of FIG. 1 and / or FIG.

The region 304 may be filled, for example, with the same color-changing substance mixture as that

Color-changing potting material 108 one of the embodiments of the description of Fig.l. The schematic

Cross-sectional view of the optoelectronic

Component device of the embodiments of Figure 3, in these embodiments, the same or a similar

Have cross-sectional view as the embodiments in Fig.1. 4 shows a schematic cross-sectional view of an optoelectronic component device, according to FIG

various embodiments. Deviant or in addition to the different ones

Embodiments of the descriptions of Fig.l, Figure 2 and / or Figure 3, a color converter may be formed as a color-changing layer 404 on or above the housing 402. The

Housing 402 may be configured as a translucent housing 206 or a color-changing housing 302, according to the embodiments of the descriptions of Figure 2 and Figure 3.

The area 304 between housing 402, carrier 102,

Optoelectronic device 104, and wavelength converter 106 may be formed, for example, according to one of the embodiments of the description of FIG.

The color-changing layer 404 on or above the housing 402 may, for example, be similar or equal to the color-changing potting material 108 of one of the embodiments of FIGS

Description of Fig.l be formed.

The color-changing layer 404 can be formed, for example, by means of a two-component injection molding (2K injection molding). The first component may be, for example, according to one of the embodiments of the description of FIG. 1, similar or equal to the color-changing potting material 108 set up. The second component may, for example, have the same or a similar material as the substance or the substance mixture of the transparent housing 206, according to one of the embodiments of the description of FIG.

In the case of combining a thermosetting component with a thermoplastic component, the color-changing layer 404 may be formed by a step process. For example, a tiered process may include the steps of: Injection molding, transfer molding and / or transfer molding

Compression molding.

However, the color-changing layer 404 may be used as a

prefabricated color-changing plate 404 are materially connected to the housing 402, for example

glued or laminated.

The color-changing layer 404 may have as a geometric shape, for example, the shape of a color-changing plane-parallel layer 404, a color-changing condenser lens 404, a color-changing diverging lens 404, a color-changing Fresnel lens 404 or a color-changing prism 404. A color-changing plane-parallel layer 404 can also be understood as an optical filter 404.

The color-modifying layer 404 may have a thickness in a range of about 1 pm to about 5 mm, for example about 200 pm.

5 shows a schematic cross-sectional view of an optoelectronic component device, according to FIG

various embodiments. Deviant or in addition to the different ones

Embodiments of the descriptions of Fig.l, Fig.2, Fig.3 and / or Fig.4, a color converter may be formed as a color-changing reflector 502. The color-changing reflector 502 can not in the direct light path of the

optoelectronic component 104 and / or the

Wavelength converter 106 may be formed.

The color-changing reflector 502 can materially

for example, similar or equal to the color-changing

Potting material 108 of an embodiment of the description of Fig.l be formed. For example, the color-changing reflector 502 may be formed on or above the support 102, the housing 402, or similar reflective surfaces outside the housing 402 from which electromagnetic radiation emitted or absorbed by the opto-electronic device 104 or the wavelength converter 106 is reflected.

The color-changing reflector 502 may have a thickness in a range of about 100 nm to about 500 pm, for example about 20 pm.

In various embodiments, a

Optoelectronic component device and a method for producing an optoelectronic

electromagnetic radiation in the technically relevant

Claims

Optoelectronic component device (100, 200, 300, 400, 500), comprising:

an optoelectronic device (104);

a wavelength converter (106) on or above the optoelectronic device (104); and

at least one color converter (108, 202, 302, 404, 502), which is set up to change an electromagnetic radiation, wherein the electromagnetic radiation has a useful wavelength range and at least one further wavelength range;

Wherein the at least one color converter (108, 202,

302, 404, 502) comprises a first support matrix and a dye;

• wherein the dye in the first carrier matrix

is distributed; and

• wherein the dye is set up,

to absorb electromagnetic radiation at least in a portion of the further wavelength range of the electromagnetic radiation.

An optoelectronic component device (100, 200, 300, 400, 500) according to claim 1,

wherein the optoelectronic component (104) emits as an electromagnetic radiation

electronic component (104) is arranged, in particular a light-emitting diode (104).

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 or 2,

wherein the dye as a substance or mixture of substances comprises or is formed from the group of substances: an organic dye, an inorganic dye, a nanoparticle or pigment.

4. Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 to 3,

wherein the dye has an absorption of electromagnetic radiation in the wavelength range less than about 400 nm and / or greater about 650 nm.

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 to 4,

wherein the dye has an absorption of electromagnetic radiation in a wavelength interval of about 10 nm to about 100 nm.

Optoelectronic component device (100, 200, 300, 400, 500) according to one of Claims 1 to 5,

wherein the color converter (108, 202, 302, 404, 502) is arranged such that the difference in color valence between the color valence of the wavelength converter (106) and the color valence of the carrier in the light path of the

Color converter (108, 202, 302, 404, 502) is reduced.

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 to 6,

further comprising a housing (206, 302, 402), wherein the housing (206, 302, 402) at least partially surrounds the optoelectronic component (104) and the wavelength converter (106), wherein a part of the housing (206, 302, 402) in the optical path of the wavelength converter (106) is set up.

Optoelectronic component device (100, 200, 300, 400, 500) according to claim 7,

wherein in the light path between the housing (206, 302, 402) and wavelength converter (106), a filler (204, 304) is formed.

An optoelectronic component device (100, 200, 300, 400, 500) according to claim 7 or 8, wherein the filler (204, 304) absorbs in at least one other wavelength range

has electromagnetic radiation as the

Dye.

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 7 to 10,

wherein a color converter (108, 202, 302, 404, 502) as a color-changing housing (302, 402), a

color-changing potting material (108, 202, 302, 404, 502), a color-changing lens (108, 202, 302, 404), a color-changing reflector (502) or as a color-changing coating (108, 202, 404, 502) is formed.

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 to 10,

wherein the first carrier matrix as a substance or mixture of substances comprises a substance or is formed from the group of substances: an epoxide, a silicone, a

Polycarbonate or a polyacrylate.

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 to 11,

set up as a flashing light (100, 200, 300, 400, 500).

Optoelectronic component device (100, 200, 300, 400, 500) according to one of claims 1 to 12,

wherein the shape of the color converter for a graphical structuring of the surface of the optoelectronic component and / or the wavelength converter

is trained. 14. Method for producing an optoelectronic

Device device (100, 200, 300, 400, 500), the method comprising: Forming an optoelectronic device (104); Forming a wavelength converter (106) on or above the optoelectronic device (104); and forming at least one color converter (108, 202, 302, 404, 502) adapted to alter electromagnetic radiation, the electromagnetic radiation having a useful wavelength range and at least one further wavelength range;

wherein the at least one color converter (108, 202, 302, 404, 502) is formed as a first carrier matrix and a dye;

o wherein prior to forming the color converter (108, 202, 302, 404, 502) the dye in the

Carrier matrix is distributed; and

o wherein the dye is set up,

electromagnetic radiation at least in a portion of the further wavelength range of the electromagnetic radiation

absorb.