WO2013192012A2 - Laser crystal degradation compensation - Google Patents
Laser crystal degradation compensation Download PDFInfo
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- WO2013192012A2 WO2013192012A2 PCT/US2013/045696 US2013045696W WO2013192012A2 WO 2013192012 A2 WO2013192012 A2 WO 2013192012A2 US 2013045696 W US2013045696 W US 2013045696W WO 2013192012 A2 WO2013192012 A2 WO 2013192012A2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3525—Optical damage
Definitions
- the disclosure generally relates to the field of inspection systems, and particularly to a laser source for inspection systems.
- Thin polished plates such as silicon wafers and the like are a very important part of modern technology.
- a wafer for instance, may refer to a thin slice of semiconductor material used in the fabrication of integrated circuits and other devices.
- Other examples of thin polished plates may include magnetic disc substrates, gauge blocks and the like. While the technique described here refers mainly to wafers, it is to be understood that the technique also is applicable to other types of polished plates as well.
- the term wafer and the term thin polished plate may be used interchangeably in the present disclosure.
- Semiconductor materials may be inspected for defects such as, e.g., surface imperfections, particles, irregularities the thickness of thin film coatings, and the like, which may hamper the performance of the semiconductor material.
- Some existing inspection systems direct a beam of radiation on the surface of the semiconductor material, then collect and analyze light reflected and/or scattered from the surface to quantify characteristics of the surface.
- existing systems generally utilize a beam scanner created by having a laser source focused on a crystal.
- the crystal is shifted to a fresh area when the currently exposed area has degraded to an undesirable level (i.e. , end of life). While shifting from a discrete crystal site at the end of its life is appropriate for the defined limits on lifetime of a laser sub-system, however, from a system perspective, shifting from an exposed area that has degraded to its end of life to a fresh area requires re- calibration or re-alignment, which is very time consuming.
- the present disclosure is directed to a method for laser crystal degradation compensation.
- the method includes: defining a plurality of sites on a frequency converting crystal; determining a degradation rate associated with each of the plurality of sites; determining an amount of time T wherein a site is continuously operable within a tolerated variation of at least one beam parameter, the amount of time T being determined based on the tolerated variation of the at least one beam parameter and the degradation rate; determining an amount of time t wherein t is a fraction of ⁇ ; and iteratively shifting among the plurality of sites, wherein each of the plurality of sites is utilized continuously for a duration of time t for each iteration.
- a further embodiment of the present disclosure is also directed to a method for laser crystal degradation compensation.
- the method includes: defining a plurality of sites on a frequency converting crystal; determining an initial operating condition associated with each of the plurality of sites; establishing a ranking order based on the initial operating condition associated with each of the plurality of sites; determining a degradation rate associated with each of the plurality of sites; determining an amount of time T wherein a site is continuously operable within a tolerated variation of at least one beam parameter, the amount of time T being determined based on the tolerated variation of the at least one beam parameter and the degradation rate; determining an amount of time t wherein t is a fraction of ⁇ ; and iteratively shifting among the plurality of sites according to the established ranking order, wherein each of the plurality of sites is utilized continuously for a duration of time t for each iteration.
- An additional embodiment of the present disclosure is directed to an illumination apparatus.
- the illumination apparatus includes a laser source and a crystal.
- the crystal is configured for receiving a laser from the laser source and providing a frequency converted beam as output.
- the crystal includes a plurality of sites defined thereof, wherein each particular site of the plurality of sites is associated with: a degradation rate, and an amount of time T wherein that particular site is continuously operable within a tolerated variation of at least one beam parameter, and wherein the crystal is iteratively shifted among the plurality of sites such that each of the plurality of sites is utilized continuously for a duration of time t for each iteration wherein t is a fraction of T.
- FIG. 1 is a block diagram depicting an illumination system
- FIG. 2 is a series of cross-sectional views depicting shifting of a frequency conversion crystal over time
- FIG. 3 is an illustration depicting degradation of a beam parameter
- FIG. 4 is an illustration depicting degradation of a beam parameter when a crystal is iteratively shifted in accordance with an embodiment of the present disclosure
- FIG. 5 is an illustration depicting degradation of a beam parameter when a crystal having crystal sites with non-uniform initial conditions is iteratively shifted
- FIG. 6 is an illustration depicting degradation of a beam parameter when the crystal of FIG. 5 is iteratively shifted according to an established order
- FIG. 7 is an illustration depicting iteratively shifting of a crystal having non-linear degradation
- FIG. 8 is an illustration depicting an alternative iteratively shifting of the crystal having non-linear degradation
- FIG. 9 is a flow diagram illustrating a method for laser crystal degradation compensation in accordance with one embodiment of the present disclosure.
- the illumination system 100 includes a laser source 102 configured for delivering a laser to a frequency converting crystal 104.
- the crystal 104 in turn produces a beam of a particular wavelength (e.g., ultraviolet or deep ultraviolet output) to provide illumination for an optical/inspection system 106. It is contemplated that the crystal 104 is configured to shift positions in order to extend its lifetime.
- a particular wavelength e.g., ultraviolet or deep ultraviolet output
- FIG. 2 is a series of cross-sectional views depicting the shifting of the crystal sites (may also be referred to as areas or spots) for receiving the laser beam over time.
- a shifting mechanism may be utilized to shift the relative positions of the laser source 102 and the crystal 104. This shifting operation may continue till T end , when shifting may repeat again from the position shown in Ti, or when the crystal 104 may have reached the full lifetime and need to be replaced.
- each given crystal site degrades over time when it is utilized. More specifically, the parameters (e.g., waist location, waist diameter, astigmatism, beam shape, power, noise, M-squared, or the like) associated with the output beam produced by a given crystal site degrades over time.
- FIG. 3 shows a simplified illustration depicting degradation of a crystal site when it is used continuously. For illustrative purposes, suppose the beam parameters observed at time T1 degrade to a level too far apart from the initial level observed at TO, the optical system may need to be optimized in order to compensate for the degradation. Furthermore, this degradation may continue to the point when the end of life of that particular crystal site is reached and the crystal needs to be shifted to a new site.
- the present disclosure is directed to systems and methods to mitigate the adverse effects on the optical system due to laser beam parameter drifts.
- the crystal is recursively/iteratively shifted at appropriate intervals and in particular manners in order to reduce the number of system optimization and/or re- calibration processes needed.
- each given crystal site in the crystal 104 is pre-characterized to determine its initial operating condition and whether the beam parameters produced at each particular crystal site is within a specific illumination requirement.
- representative degradation rates for the crystal sites can be pre-determined based on analysis of similar or substantially identical crystals. For instance, degradation of a particular crystal site may be observed over time, which may be used as the representative degradation rate for the same type of crystals in subsequent uses. Alternatively, a set of crystal sites selected from one or more different crystals may be observed over time and an overall average may be obtained. It is contemplated that various other statistical and/or analysis techniques may be utilized to obtain such representative degradation rates for crystal sites without departing from the spirit and scope of the present disclosure.
- FIG. 4 a simplified illustration depicting degradations of recursively shifted crystal sites in accordance with one embodiment of the present disclosure is shown.
- the crystal being utilized has 20 discrete sites/spots that have the same initial beam parameters and the same degradation rate.
- each of the 20 sites is utilized only for a short interval t and is shifted to the next one.
- a complete pass i.e., iteration
- this shifting process repeats recursively as illustrated in the figure.
- each crystal site is used continuously till its end-of-life and then subsequently shifted to the next site, five optimizations are required (e.g., at T1 through T5) per site.
- each site is utilized only for a short interval t during a given iteration, and system optimization is only required after four iterations in the example shown in FIG. 4 (i.e., when all 20 sites degrade to a lower level).
- Recursively shifting the crystal after a short interval t in accordance with the present disclosure effectively reduces the number of system optimizations required by a factor of 20 in this example.
- a major re-calibration or re-alignment is not required as was for a single site continuous approach. That is, while a major system re-calibration or realignment is generally required when shifting from an end-of-life site to a fresh site, however, in accordance with this embodiment of the present disclosure, the crystal is shifted from one site to another only after a short interval t, and the crystal is never shifted from an end-of-life site to a fresh site. Therefore, the differences in beam parameters introduced as the result of such a shift are significantly reduced and no major system re- calibration or re-alignment is required. It is contemplated that when the final pass is completed, which would be 20 passes for the example shown in FIG. 4, all sites would be equally out-of-specification with respect to the system requirement and the entire crystal can be replaced.
- the interval t may be any duration as long as it is less than the time interval T without departing from the spirit and scope of the present disclosure.
- each site can be characterized on-the-fly the first time that particular site is utilized. Such an on-the-fly characterization process may reduce the setup time required when a new crystal is used.
- the initial conditions of different sites/spots within the same crystal may vary slightly.
- the initial beam parameters observed at some crystal sites may differ from that observed at some other sites even within the same crystal.
- sequentially shifting from crystal sites located on one end of the crystal to the other may produce some undesirable results.
- FIG. 5 shows a simplified illustration depicting the differences in beam parameters if the initial conditions of the different sites within the same crystal are different and if the crystal is shifted sequentially from one end to another.
- the crystal is shifted in an ordered manner based on a predetermined ranking of the crystal sites. More specifically, the crystal sites within the same crystal are ranked according to one or more beam parameters. Once a ranking is established, the crystal is shifted according to the ranking order (as opposed to simply from one end to the other) to reduce/mitigate abrupt changes.
- FIG. 6 is an illustration depicting the same crystal as shown in FIG. 5 shifted according to the established ranking order instead.
- the different sites are ranked in a descending order based on the observed beam parameters. More specifically, suppose that the crystal sites are indexed from left to right as site #1 through site #20, and suppose that the observed beam parameters associated with site #11 have the highest value, followed by site #5, site #4 and so on (as shown in FIG. 5). Based on this ranking, site #11 (the highest ranking site) may be used first for a time period t, then shifted to site #5 (the second highest ranking site), followed by site #4 and so on to complete the first pass. Subsequent passes will be performed in the same ranking order and therefore have a similar curve offset down by one degradation increment. In this manner, the crystal is shifted to provide less abrupt changes.
- the established ranking order is not limited to a descending order as illustrated in the example above. For instance, some beam parameters may increase when they degrade, and in such cases, the different sites may be ranked in an ascending order without departing from the spirit and scope of the present disclosure. It is also contemplated that ranking may be extended to variable intervals based on expected degradation rates or the initial beam parameter values.
- sites producing similar beam parameters may be arrange into bins/groups.
- the 20 crystal sites shown in the figures may be grouped into two groups of 10 each or 5 groups of 4 each. One particular group may be recursively accessed until that particular group hits end-of-life whereupon the next group may then be accessed and the process continues. It is contemplated, however, that the groups are not required to be identical in size.
- only the crystal sites in the highest ranking group may be accessed recursively until their beam parameters have degraded to substantially the same level as the next highest group.
- the crystal sites in these two groups can then operate together as one merged group until their beam parameters have degraded to substantially the same level as the next group, at which point they may merge again to form an even larger group. This process may continued until the condition is reached where all sites are merged into a single group, in which case all crystal sites now have substantially similar beam parameters and the same technique described in FIG. 4 can be utilized.
- the methods in accordance with the present disclosure is applicable even if the crystal sites degrade in a nonlinear manner. For instance, as illustrated in FIG.
- the degradation curve may be sub-divided into several regions of relatively constant linear degradation.
- the interval between site shifts i.e., t
- the number of passes that can be performed without needing to optimize the system may double after the 8 th pass.
- the interval between site shifts i.e., t
- the interval between site shifts can also be adjusted relative to the change in slope as shown in FIG. 8, where one pass of the crystal may take, for example, twice as long. In both cases, the decreased rate of degradation would require less optimization efforts and thereby increase system utilization.
- the methods in accordance with the present disclosure provide a more uniform system performance in spite of the degradation rate of the laser.
- System utilization is maximized by substantially reducing the number of system optimizations needed and removing major re-alignment requirements caused by end-of-life spot shifts.
- the beam parameters referenced in the present disclosure may include, but not limited to, waist location, waist diameter, astigmatism, beam shape, power, noise, M-squared and the like. It is also contemplated that any one or a combination of more than one of such parameters may be used to evaluate or rank a crystal site/spot as previously described. It is contemplated that the selection of specific parameters and the weight assigned to each parameter (e.g., if a weighted average is used) may be determined based on system requirements and may vary without departing from the spirit and scope of the present disclosure. [0031 ] Furthermore, it is contemplated that the crystal sites are not required to be completely spaced apart. That is, overlaps between the sites may be allowed without departing from the spirit and scope of the present disclosure.
- FIG. 9 is a flow diagram illustrating a method 900 for laser crystal degradation compensation in accordance with the present disclosure.
- a plurality of sites/spots may be defined on a frequency converting crystal in step 902.
- Step 904 may determine a degradation rate associated with each site. It is contemplated that the degradation rate may be pre-determined based on observation of one or more substantially identical crystals.
- step 906 may determine an amount of time (denoted as T) wherein a site is continuously operable within a tolerated variation of at least one beam parameter.
- the value of T represents the amount of time a site can be continuously operated without prompting a required optimization.
- Step 908 may then determine the amount of time t as previously described, and step 910 may iteratively shift among the plurality of sites based on the determined t value. That is, each site should be utilized continuously for only the duration of time t for each iteration.
- a ranking order may also be established as described above.
- a ranking order is established for each site, and the crystal is shifted from one site to another based on the established order.
- the various sites are arranged into multiple groups. Only the crystal sites in the highest ranking group may be accessed recursively until their beam parameters have degraded to substantially the same level as the next highest group, in which case they can be merged to form a larger group. This process may continued until the condition is reached where all sites are merged into a single group, in which case all crystal sites now have substantially similar beam parameters and the same technique described above can be utilized.
- the methods disclosed may be implemented as sets of instructions, through a single production device, and/or through multiple production devices. Further, it is understood that the specific order or hierarchy of steps in the methods disclosed are examples of exemplary approaches. Based upon design preferences, it is understood that the specific order or hierarchy of steps in the method can be rearranged while remaining within the scope and spirit of the disclosure.
- the accompanying method claims present elements of the various steps in a sample order, and are not necessarily meant to be limited to the specific order or hierarchy presented.
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015518460A JP6238976B2 (en) | 2012-06-21 | 2013-06-13 | Laser crystal degradation compensation |
| CN201380032976.0A CN104412374B (en) | 2012-06-21 | 2013-06-13 | Laser crystal degrades and compensates |
| DE112013003111.6T DE112013003111B4 (en) | 2012-06-21 | 2013-06-13 | Laser crystal aging compensation and lighting fixture |
| KR1020157000577A KR102130183B1 (en) | 2012-06-21 | 2013-06-13 | Laser crystal degradation compensation |
| IL236072A IL236072A (en) | 2012-06-21 | 2014-12-04 | Laser crystal degradation compensation |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261662484P | 2012-06-21 | 2012-06-21 | |
| US61/662,484 | 2012-06-21 | ||
| US13/905,346 US8976343B2 (en) | 2012-06-21 | 2013-05-30 | Laser crystal degradation compensation |
| US13/905,346 | 2013-05-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2013192012A2 true WO2013192012A2 (en) | 2013-12-27 |
| WO2013192012A3 WO2013192012A3 (en) | 2014-03-06 |
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ID=49769662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2013/045696 Ceased WO2013192012A2 (en) | 2012-06-21 | 2013-06-13 | Laser crystal degradation compensation |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8976343B2 (en) |
| JP (1) | JP6238976B2 (en) |
| KR (1) | KR102130183B1 (en) |
| CN (1) | CN104412374B (en) |
| DE (1) | DE112013003111B4 (en) |
| IL (1) | IL236072A (en) |
| TW (1) | TWI569546B (en) |
| WO (1) | WO2013192012A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11271360B2 (en) | 2017-08-22 | 2022-03-08 | Gigaphoton Inc. | Wavelength converter |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
| US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9419407B2 (en) | 2014-09-25 | 2016-08-16 | Kla-Tencor Corporation | Laser assembly and inspection system using monolithic bandwidth narrowing apparatus |
| US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
| US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
| US10312659B1 (en) | 2018-03-20 | 2019-06-04 | Coherent Lasersystems Gmbh & Co. Kg | Controlling laser beam parameters by crystal shifting |
| US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| US11237455B2 (en) | 2020-06-12 | 2022-02-01 | Kla Corporation | Frequency conversion using stacked strontium tetraborate plates |
| US12379642B2 (en) | 2021-06-11 | 2025-08-05 | Kla Corporation | Tunable DUV laser assembly |
| US11567391B1 (en) | 2021-11-24 | 2023-01-31 | Kla Corporation | Frequency conversion using interdigitated nonlinear crystal gratings |
| US11899338B2 (en) | 2021-12-11 | 2024-02-13 | Kla Corporation | Deep ultraviolet laser using strontium tetraborate for frequency conversion |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4178561A (en) | 1978-10-02 | 1979-12-11 | Hughes Aircraft Company | Scanning arrangements for optical frequency converters |
| US5520679A (en) * | 1992-12-03 | 1996-05-28 | Lasersight, Inc. | Ophthalmic surgery method using non-contact scanning laser |
| US5825562A (en) | 1997-08-18 | 1998-10-20 | Novatec Corporation | Method of continuous motion for prolong usage of optical elements under the irradiation of intensive laser beams |
| DE60004237T2 (en) | 1999-06-11 | 2004-04-15 | Daniel Dr. Kopf | LASER-generator system |
| US6388534B1 (en) | 1999-06-29 | 2002-05-14 | Alfiero Balzano | Laser controlled crystal and dielectric resonator oscillators |
| EP1386196A1 (en) | 2001-05-08 | 2004-02-04 | Spectra Physics Lasers, Inc. | Algorithm for enhancing the lifetime of critical components in a laser system |
| JP2004022946A (en) * | 2002-06-19 | 2004-01-22 | Yaskawa Electric Corp | Harmonic laser device and laser wavelength conversion method |
| US6859335B1 (en) | 2002-11-20 | 2005-02-22 | Ming Lai | Method of programmed displacement for prolong usage of optical elements under the irradiation of intensive laser beams |
| DE20317873U1 (en) * | 2002-11-20 | 2004-04-08 | Lambda Physik Ag | Pixel sensitivity correction application method for pixels in charge-coupled device camera, involves changing laser wavelength |
| US7242700B2 (en) | 2004-10-05 | 2007-07-10 | Coherent, Inc. | Stabilized frequency-converted laser system |
| KR20070027346A (en) * | 2005-09-06 | 2007-03-09 | 엘지이노텍 주식회사 | Crystal frequency deviation adjusting circuit |
| US8084706B2 (en) * | 2006-07-20 | 2011-12-27 | Gsi Group Corporation | System and method for laser processing at non-constant velocities |
| US7826502B2 (en) | 2006-12-14 | 2010-11-02 | Jds Uniphase Corporation | Circuit and method for lessening noise in a laser system having a frequency converting element |
| JP4596181B2 (en) | 2007-03-28 | 2010-12-08 | 日本電気株式会社 | External cavity tunable semiconductor laser |
| FR2938935B1 (en) | 2008-11-21 | 2011-05-06 | Eolite Systems | DEVICE FOR EXTENDING THE LIFETIME OF A NON-LINEAR OPTICAL SYSTEM SUBJECTED TO RADIATION OF AN INTENSE LASER BEAM AND NON-LINEAR OPTICAL SOURCE COMPRISING SAID DEVICE |
| JP4729093B2 (en) * | 2008-11-27 | 2011-07-20 | 株式会社東芝 | Wavelength conversion light source device and wavelength conversion method |
| US8482846B2 (en) | 2010-08-09 | 2013-07-09 | Coherent Gmbh | Advanced shifting algorithm for prolonging the life of an optically nonlinear crystal |
| US8824514B2 (en) | 2010-11-09 | 2014-09-02 | Kla-Tencor Corporation | Measuring crystal site lifetime in a non-linear optical crystal |
-
2013
- 2013-05-30 US US13/905,346 patent/US8976343B2/en active Active
- 2013-06-13 KR KR1020157000577A patent/KR102130183B1/en active Active
- 2013-06-13 CN CN201380032976.0A patent/CN104412374B/en active Active
- 2013-06-13 DE DE112013003111.6T patent/DE112013003111B4/en active Active
- 2013-06-13 JP JP2015518460A patent/JP6238976B2/en active Active
- 2013-06-13 WO PCT/US2013/045696 patent/WO2013192012A2/en not_active Ceased
- 2013-06-14 TW TW102121232A patent/TWI569546B/en active
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2014
- 2014-12-04 IL IL236072A patent/IL236072A/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11271360B2 (en) | 2017-08-22 | 2022-03-08 | Gigaphoton Inc. | Wavelength converter |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112013003111B4 (en) | 2022-03-17 |
| CN104412374A (en) | 2015-03-11 |
| JP2015527602A (en) | 2015-09-17 |
| KR102130183B1 (en) | 2020-07-03 |
| JP6238976B2 (en) | 2017-11-29 |
| CN104412374B (en) | 2017-06-20 |
| WO2013192012A3 (en) | 2014-03-06 |
| TWI569546B (en) | 2017-02-01 |
| US20130342832A1 (en) | 2013-12-26 |
| US8976343B2 (en) | 2015-03-10 |
| KR20150031436A (en) | 2015-03-24 |
| IL236072A (en) | 2017-10-31 |
| IL236072A0 (en) | 2015-01-29 |
| TW201403981A (en) | 2014-01-16 |
| DE112013003111T5 (en) | 2015-04-02 |
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