WO2013180141A1 - 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタ、表示装置およびスパッタリングターゲット - Google Patents
薄膜トランジスタの半導体層用酸化物、薄膜トランジスタ、表示装置およびスパッタリングターゲット Download PDFInfo
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- WO2013180141A1 WO2013180141A1 PCT/JP2013/064807 JP2013064807W WO2013180141A1 WO 2013180141 A1 WO2013180141 A1 WO 2013180141A1 JP 2013064807 W JP2013064807 W JP 2013064807W WO 2013180141 A1 WO2013180141 A1 WO 2013180141A1
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- semiconductor layer
- thin film
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- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 239000010409 thin film Substances 0.000 title claims abstract description 77
- 238000005477 sputtering target Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 36
- 229910052738 indium Inorganic materials 0.000 claims abstract description 35
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present invention relates to an oxide for a semiconductor layer of a thin film transistor (TFT) used in a display device such as a liquid crystal display or an organic EL display, a thin film transistor including the oxide, a display device including the thin film transistor, and formation of the oxide. It is related with the sputtering target used for.
- TFT thin film transistor
- Amorphous (amorphous) oxide semiconductors have higher carrier mobility (also referred to as field-effect mobility, hereinafter sometimes referred to simply as “mobility”) compared to general-purpose amorphous silicon (a-Si).
- mobility also referred to as field-effect mobility, hereinafter sometimes referred to simply as “mobility”
- a-Si general-purpose amorphous silicon
- an amorphous oxide semiconductor made of indium, gallium, zinc, and oxygen (In-Ga-Zn-O, hereinafter sometimes referred to as "IGZO") has extremely high carrier mobility. Therefore, it is preferably used.
- IGZO amorphous oxide semiconductor made of indium, gallium, zinc, and oxygen
- TFT thin film transistor
- the on-current the maximum drain current when a positive voltage is applied to the gate electrode and the drain electrode
- the off-current a negative voltage is applied to the gate electrode and a positive voltage is applied to the drain voltage
- a TFT using an oxide semiconductor layer such as IGZO is required to have excellent resistance (stress resistance) to stress such as voltage application and light irradiation.
- stress resistance stress resistance
- a voltage is continuously applied to the gate electrode or when a blue band light that is absorbed in the semiconductor layer is irradiated, charges are trapped at the interface between the gate insulating film and the semiconductor layer of the thin film transistor, and the semiconductor layer It has been pointed out that the threshold voltage is greatly changed (shifted) to the negative side due to the change in charge of the TFT, thereby changing the switching characteristics of the TFT.
- the threshold voltage shift causes a decrease in the reliability of a display device itself such as a liquid crystal display or an organic EL display having a TFT, so that the stress tolerance is improved (that is, the amount of change before and after the stress application is small). ) Is strongly desired.
- the oxide semiconductor thin film has high characteristics (wet etching resistance) against chemicals such as a wet etching solution. Is also required. Specifically, since the types of wet etching liquids used are different in each step during TFT fabrication, the following two characteristics are required for the oxide semiconductor thin film.
- the oxide semiconductor thin film has excellent solubility with respect to a wet etching solution for processing an oxide semiconductor. That is, the oxide semiconductor thin film is formed by an organic acid-based wet etching solution such as oxalic acid used when processing an oxide semiconductor thin film. The oxide semiconductor thin film is required to be etched at an appropriate rate and patterned without residue.
- the oxide semiconductor thin film is insoluble in the wet etching solution for the source / drain electrode, that is, used when processing the wiring film for the source / drain electrode formed on the oxide semiconductor thin film.
- the source / drain electrodes are etched at an appropriate rate by a wet etching solution (for example, an inorganic acid containing phosphoric acid, nitric acid, acetic acid, etc.), but the surface (back channel) side of the oxide semiconductor thin film is on the wet etching solution. Therefore, it is required that the TFT characteristics and stress resistance are not deteriorated due to shaving or damage.
- the degree of etching (etching rate) by the wet etchant varies depending on the type of wet etchant.
- the aforementioned IGZO has excellent solubility in a wet etching solution such as oxalic acid (that is, excellent in wet etching resistance during the processing of the oxide semiconductor thin film of (i) above), but with respect to an inorganic acid-based wet etching solution. It is highly soluble and is very easily etched by an inorganic acid-based wet etching solution.
- the structure of the bottom gate thin film transistor using an oxide semiconductor includes an etch stop type (ESL type) having an etch stopper layer 9 shown in FIG. 1A and a back channel etch type having no etch stopper layer shown in FIG. 1B. It is roughly divided into two types (BCE type).
- ESL type etch stop type
- BCE type back channel etch type having no etch stopper layer shown in FIG. 1B.
- 1 is a substrate
- 2 is a gate electrode
- 3 is a gate insulating film
- 4 is an oxide semiconductor layer
- 5 is a source / drain electrode.
- 6 is a protective film (insulating film)
- 7 is a contact hole
- 8 is a transparent conductive film.
- the etch stopper layer 9 in FIG. 1A is formed for the purpose of preventing the transistor characteristics from being deteriorated due to damage to the oxide semiconductor layer 4 when the source / drain electrodes 5 are etched. According to FIG. 1A, since the damage to the surface of the semiconductor layer is small during the processing of the source / drain electrodes, it is easy to obtain good TFT characteristics.
- an insulating film such as SiO 2 is generally used.
- the oxide semiconductor layer 4 may not be damaged even if the etch stopper layer is not provided at the time of etching.
- the BCE structure of FIG. 1B is used.
- the BCE structure of FIG. 1B can be used.
- Patent Document 1 discloses that an inorganic acid-based wet etching solution (for example, phosphoric acid / nitric acid / acetic acid) is used in wet etching of a source electrode and a drain electrode by adding a predetermined amount of Sn to IGZO.
- a technique for improving resistance to a mixed acid wet etching solution) and suppressing erosion of a semiconductor layer is disclosed.
- Table 2 of Examples of Patent Document 1 shows that the atomic ratio of Sn to the total amount of In, Ga, Zn, and Sn is in the range of 0.015 to 0.070 (1.5 to 7%). It is described that in the BCE thin film transistor having a controlled semiconductor film, variation in TFT characteristics is reduced.
- the above Patent Document 1 does not pay attention to the improvement of stress tolerance.
- the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a threshold for light, bias stress, and the like while maintaining high field effect mobility in a thin film transistor including an oxide semiconductor layer thin film.
- An object of the present invention is to provide a sputtering target used, a thin film transistor including the oxide for a semiconductor layer, and a display device including the thin film transistor.
- the oxide for a semiconductor layer of the present invention that has solved the above problems is an oxide used for a semiconductor layer of a thin film transistor including a source electrode, a drain electrode, a gate electrode, a gate insulating film, a semiconductor layer, and a protective film on a substrate.
- the oxide is composed of In, Zn, Ga, Sn, and O, and each metal for all metal elements (In, Zn, Ga, and Sn) excluding oxygen in the oxide.
- the element contents (atomic%) are [In], [Zn], [Ga], and [Sn], respectively, they have a gist that satisfies the following formulas (1) to (4). is there.
- the following formulas (5) to (8) are further satisfied. 12 ⁇ [In] ⁇ 20 (5) 17 ⁇ [Sn] ⁇ 25 (6) 15 ⁇ [Ga] ⁇ 20 (7) 40 ⁇ [Zn] ⁇ 50 (8)
- the oxide for semiconductor layer of the present invention preferably has a carrier density of 1 ⁇ 10 15 to 1 ⁇ 10 17 / cm 3 .
- the present invention also includes a thin film transistor including the semiconductor layer oxide as a semiconductor layer of the thin film transistor.
- the density of the semiconductor layer is 6.0 g / cm 3 or more.
- the present invention includes a display device including the thin film transistor.
- the sputtering target of the present invention is a sputtering target for forming the semiconductor layer oxide according to any one of the above, and includes In, Zn, Ga, and Sn, and includes each metal element with respect to all metal elements.
- the present invention has a summary where the following formulas (1) to (4) are satisfied. 1.67 ⁇ [Zn] + 1.67 ⁇ [Ga] ⁇ 100 (1) ([Zn] /0.95) + ([Sn] /0.40) + ([In] /0.4) ⁇ 100 (2) [In] ⁇ 40 (3) [Sn] ⁇ 5 (4)
- the mobility is high, the switching characteristics and stress resistance of the thin film transistor are excellent (the shift amount of the threshold voltage before and after light irradiation and negative bias application is small), and the source / drain electrodes are patterned. It was possible to provide an oxide for a semiconductor layer of a thin film transistor having excellent resistance (wet etching resistance) to the wet etching solution used in the above. When the thin film transistor including the oxide of the present invention is used, a display device with high reliability can be obtained.
- the oxide of the present invention is excellent in wet etching resistance, it is particularly suitably used for a thin film transistor having a BCE structure, but is not limited thereto, and can be applied to a thin film transistor having an ESL structure. Regardless of the type of wet etching solution, good characteristics can be exhibited.
- FIG. 1A is a schematic cross-sectional view for explaining an etch stop (ESL) type TFT including an oxide semiconductor layer and using an etch stopper layer.
- FIG. 1B is a schematic cross-sectional structure of a back channel etch (BCE) type TFT that includes an oxide semiconductor layer and does not use an etch stopper layer.
- FIG. 2A is a graph showing a relationship between a region satisfying the expression (1) defined in the present invention and determination of stress tolerance.
- FIG. 2B is a graph showing a relationship between a region satisfying the expression (2) defined in the present invention and mobility determination.
- FIG. 2C is a graph showing a relationship between a region satisfying the expressions (1) and (2) defined in the present invention and determination of stress tolerance and mobility.
- FIG. 3A is the same as that of Example 1 in Table 1.
- FIG. 3 is a graph showing Id-Vg characteristics of a TFT manufactured using an oxide semiconductor of Example 1 (Example of the present invention).
- 3B is the same as that of Example 1 in Table 1.
- 1 is a result of light stress resistance of a TFT manufactured using an oxide semiconductor of No. 1 (Example of the present invention).
- 4A is the same as that of Example 1 in Table 1.
- 4B is the same as that of Example 1 in Example 1.
- . 4C is the same as that of Example 1 in Table 1.
- FIG. 5 is a graph showing the effect of the amount of Sn in the total metal elements on the wet etching rate of the source / drain electrodes in In—Ga—Zn—Sn—O of Example 2.
- the present inventors have repeatedly studied to improve TFT characteristics, stress resistance, and wet etching resistance when an oxide (IGZO) containing a metal element of In, Ga, and Zn is used for an active layer of a TFT. I came. As a result, it was found that the intended purpose is achieved by using IZGTO in which Sn is added to IGZO and the content of the metal element constituting IZGTO is appropriately controlled. completed.
- IGZO oxide
- IZGTO in which Sn is added to IGZO and the content of the metal element constituting IZGTO is appropriately controlled.
- an oxide composed of In, Zn, Ga, Sn, and O may be abbreviated as IZGTO.
- the oxide for a semiconductor layer of the present invention is an oxide used for a semiconductor layer of a thin film transistor including a source electrode, a drain electrode, a gate electrode, a gate insulating film, a semiconductor film, and a protective film on a substrate,
- the oxide is composed of In, Zn, Ga, Sn, and O, and the content (atomic%) of each metal element with respect to all metal elements excluding oxygen in the oxide is [In], [ When Zn], [Ga], and [Sn] are satisfied, the following formulas (1) to (4) are satisfied.
- [In] in this specification means the In content (atomic%) with respect to all metal elements (In, Zn, Ga, and Sn) excluding oxygen (O).
- [Zn], [Ga], and [Sn] respectively represent Zn, Ga, and Sn contents (atomic%) with respect to all metal elements (In, Zn, Ga, and Sn) except oxygen (O). ).
- excellent in TFT characteristics means Vth (absolute value) when the threshold voltage (Vth) and the field effect mobility ( ⁇ FE ) are measured by the method described in Examples described later. It means that ⁇ 5 V and ⁇ FE ⁇ 4.9 m 2 / Vs are satisfied.
- excellent stress resistance is a method described in Examples described later, and a stress application test in which a negative bias is continuously applied to the gate electrode while irradiating the sample with white light was performed for 2 hours. This means that the shift amount ( ⁇ Vth (absolute value)) of the threshold voltage (Vth) before and after the stress application test is 4.8 V or less.
- excellent wet etchability means that when the source / drain electrodes are patterned with a wet etchant, the source / drain electrodes are etched, but the oxide semiconductor layer is Means insoluble.
- etching rate in the above range are difficult to etch the oxide semiconductor thin film with the wet etchant, so that the surface (back channel) side of the oxide semiconductor layer is scraped or damaged by the wet etchant, resulting in TFT characteristics. And stress tolerance is not reduced.
- the oxide for semiconductor layer (oxide semiconductor thin film) of the present invention is an amorphous oxide composed of In, Zn, Ga, Sn, and O (IZGTO), and the above formulas (1) to (4) ) Is satisfied.
- IGZO composed of In, Ga, Zn, and O is known as an oxide for a semiconductor layer.
- In contributes to improvement of electrical conductivity
- Ga contributes to reduction of oxygen deficiency
- Zn contributes to stabilization of the amorphous structure.
- FIG. 2A is a graph showing the relationship between a region satisfying the above formula (1) and the stress tolerance determination results (A, B, D) based on the results of Examples described later.
- the case where the determination result of the stress tolerance is “A” or “B” is indicated by “ ⁇ ”
- the case where the determination result of the stress resistance is “D” is indicated by “X”.
- those satisfying the formula (1) have good stress resistance.
- FIG. 2B is a graph showing the relationship between the region satisfying the above formula (2) and the mobility determination results (A, B, D) based on the results of the examples described later.
- the case where the mobility determination result is “A” or “B” is indicated by “ ⁇ ”, and the case where the stress tolerance determination result is “D” is indicated by “X”.
- FIG. 2B it can be seen that those satisfying the formula (2) have high mobility.
- FIG. 2C is a graph showing the relationship between a region satisfying both the above formulas (1) and (2) and the determination results of stress tolerance and mobility.
- the case where both the stress tolerance and mobility determination results are “A” or “B” is indicated by “ ⁇ ”, and at least one of the stress resistance and mobility determination results is “D”.
- the case where there was is shown by "x”.
- FIG. 2C it is understood that those satisfying both of these formulas (1) and (2) are excellent in stress resistance and have high mobility.
- the above formula (1) is composed of Zn and Ga among the metal elements constituting IZGTO, and contributes to the improvement of stress resistance. As shown in the examples described later, those that do not satisfy the relationship of the above formula (1) have a threshold voltage shift amount exceeding 4.8 V even if other requirements are satisfied, It was found that stress tolerance decreased.
- the above equation (1) is derived as follows. That is, it is known that the degradation of TFT characteristics due to stress such as voltage application or light irradiation is caused by defects formed at the semiconductor itself or at the interface between the semiconductor and the gate insulating film during stress application.
- an insulator such as SiO 2 , Si 3 N 4 , Al 2 O 3 , or HfO 2 is generally used. At this time, it is considered that defects are particularly likely to be formed because different materials contact the interface between the semiconductor layer and the insulating film. Therefore, in order to improve the stress resistance, it is considered that handling (control) of the interface between the semiconductor layer and the insulating film is very important.
- the value (1.67 ⁇ [Zn] + 1.67 ⁇ [Ga]) defined on the left side of the formula (1) is defined as the value (1)
- the above (1) ) Value is preferably 103 or more, more preferably 105 or more.
- the above formula (2) is composed of Zn, Sn, and In among the metal elements constituting IZGTO, and is a formula that mainly contributes to the improvement of mobility. As shown in the examples to be described later, those not satisfying the relationship of the above formula (2) have lower mobility even if other requirements are satisfied, and furthermore, the Zn ratio ([Zn ]), The stress tolerance was lowered, and it was found that the desired level could not be secured.
- the above equation (2) is derived as follows. That is, when the present inventors examined the relationship between each element of In, Ga, Zn, and Sn and the mobility in detail, the amount of Ga and Zn with respect to all metal elements of In, Ga, Zn, and Sn increased. As a result, it was found that the amount of In and Sn that are relatively responsible for the conduction path of electrons decreased, and as a result, the mobility decreased (see FIG. 4 described later). As a result of further studies based on the above findings, it was found that the above formula (2) set in relation to Zn, Sn, and In, excluding Ga, is effective as an index for improving mobility.
- the ratio of the above elements to all metal elements needs to be adjusted to an appropriate range. Therefore, as a result of repeating a number of basic experiments, the above equation (2) was set as an equation related to mobility improvement.
- the ratio of In and Sn In order to show the semiconductor characteristics, it is necessary to control the ratio of In and Sn to all the metal elements within a predetermined range. This is because the ratio of Ga and Zn as defined in the above-described formula (1). By controlling, it is indirectly controlled.
- the value (([Zn] /0.95) + ([Sn] /0.40) + ([In] /0.4)) defined on the left side of the above formula (2) is defined as the value (2).
- the value (2) for more effectively exerting the above action is preferably 103 or more, and more preferably 105 or more.
- the value (2) is too large, the bond with oxygen in the oxide semiconductor becomes unstable, resulting in variations in TFT characteristics and a decrease in stress resistance against light and voltage. It is preferable to control to the following. More preferably, it is 160 or less. Specifically, it is preferable to set an appropriate range so that desired characteristics can be effectively exhibited in consideration of the balance between the above formula (1) and the following formulas (3) to (4). .
- the above formula (3) defines the amount of In ([In]) in all metal elements, and is a formula that contributes mainly to the improvement of stress resistance together with the above formula (1).
- the inventors have examined the transistor characteristics of IZGTO in detail, and as the amount of In in all metal elements increases, the mobility tends to improve. On the other hand, if the amount of In increases too much, the carrier density increases. It was found that the threshold voltage (Vth) was greatly shifted to the negative side and exhibited normally-on characteristics. In general, as a transistor characteristic, it is preferable that the threshold voltage is as close to 0 V as possible. Therefore, as shown in the above formula (3), the amount of In with respect to all metal elements is suppressed to 40% or less.
- [In] for more effectively exerting the above-described action by In is preferably 35% or less, more preferably 30% or less. It is. However, if [In] becomes too small, there is a problem that the carrier density decreases, the electron conduction path decreases, and the mobility decreases, so the lower limit is generally controlled to 5% or more. It is preferable. More preferably, it is 10% or more. Specifically, it is preferable to set an appropriate range so that desired characteristics can be effectively exhibited in consideration of the balance with the above formulas (1) to (2) and formula (4) described later. . Considering the balance of the expressions (1) to (4), a particularly preferable range of [In] is a range satisfying the following expression (5). 12 ⁇ [In] ⁇ 20 (5)
- the above formula (4) defines the Sn amount ([Sn]) in all metal elements, and is set mainly from the viewpoint of improving wet etching resistance. As shown in the examples described later, it has been found that those not satisfying the relationship of the above formula (4) increase the wet etching rate even if other requirements are satisfied.
- the increase in the wet etching rate causes a decrease in the thickness of the thin film constituting the source / drain electrode and an increase in damage to the surface when the source / drain electrode is wet etched, resulting in a decrease in TFT characteristics.
- the predetermined amount of Sn added to IGZO is not only an etching rate lowering effect on the wet etching solution used in the TFT fabrication process as described above, but also mobility. It was found that it also has an improving effect. Furthermore, it has been found that a predetermined amount of Sn has an effect of improving chemical stability, such as reducing damage caused by an etching solution on the surface of an oxide semiconductor and also having an effect of improving stress resistance.
- [Sn] for more effectively exerting the above-described action by Sn is preferably 6% or more, and more preferably 8% or more.
- [Sn] becomes too large, it becomes insoluble in an organic acid such as oxalic acid, which is widely used as a wet etching solution for processing an oxide semiconductor, and the processing of the oxide semiconductor cannot be performed.
- a particularly preferable range of [Sn] is a range satisfying the following expression (6). 17 ⁇ [Sn] ⁇ 25 (6)
- the oxide for a semiconductor layer of the present invention further properly controls the amount of Ga ([Ga]) in all metal elements, on the premise that the relationships of the above formulas (1) to (4) are satisfied. It is preferable to do. Specifically, it is preferable to control [Ga] within a range of approximately 10 to 40%. If [Ga] is less than 10%, the bond with oxygen becomes unstable, and the light stress resistance decreases. On the other hand, when [Ga] exceeds 40%, the carrier density decreases and the mobility decreases.
- a particularly preferable range of [Ga] is a range that satisfies the following formula (7). 15 ⁇ [Ga] ⁇ 20 (7)
- the oxide for a semiconductor layer of the present invention further appropriately controls the amount of Zn ([Zn]) in all metal elements, on the assumption that the relations of the above formulas (1) to (4) are satisfied. It is preferable to do. Specifically, it is preferable to control [Zn] within a range of about 10 to 80%. If [Zn] is less than 10%, the amorphous structure becomes unstable and the TFT does not perform switching operation. On the other hand, when [Zn] exceeds 80%, the oxide semiconductor thin film is crystallized, and [In] and [Sn] are relatively reduced, so that the mobility is lowered.
- a particularly preferable range of [Zn] is a range satisfying the following formula (8). 40 ⁇ [Zn] ⁇ 50 (8)
- Patent Document 1 described above relates to IZGTO having excellent wet etching resistance as in the present invention, but is greatly different from the present invention in the following points.
- the resistance to wet etching in the present invention means that the oxide semiconductor layer is insoluble in the etching solution for processing the source / drain electrodes as described above.
- the wet etching solution for processing an oxide semiconductor typified by oxalic acid is easily etched, in other words, the wet etching rate by an organic etching solution such as oxalic acid is high.
- ITO-06N manufactured by Kanto Chemical Co., Inc.
- an oxalic acid-based wet etching solution was used as the “thin film processability”, and the etching rate at 35 ° C.
- the substantial composition range of IZGTO is different. Specifically, as described above, the range of [Sn] is substantially different (7% or less at the maximum in the example of Patent Document 1), and the range of [In] (40% or more in Patent Document 1). ), A preferable range of [Ga] (20 to 40% of the target in Patent Document 1) is different. Actually, even when an experiment is performed using the IZGTO described in Patent Document 1, since [Sn] is small, not only the wet etching resistance defined in the present invention cannot be obtained but also the desired stress resistance can be obtained. (Refer to No. 26 of Table 1 in Examples described later).
- oxide for semiconductor layer used in the present invention has been described above.
- the oxide thin film is preferably formed by a sputtering method using a sputtering target (hereinafter also referred to as “target”). According to the sputtering method, a thin film having excellent in-plane uniformity of components and film thickness can be easily formed.
- the oxide may be formed by a chemical film formation method such as a coating method.
- a target used in the sputtering method it is preferable to use a sputtering target containing the above-described elements and having the same composition as the desired oxide, whereby a thin film having a desired component composition can be formed with little composition deviation.
- a film may be formed using a co-sputtering method (Co-Sputter method) in which two targets having different compositions are discharged simultaneously.
- a co-sputtering method Co-Sputter method
- an oxide target of each element of In, Ga, Zn, and Sn for example, In 2 O 3 , ZnO, SnO 2 , Ga 2 O 3 , or the like
- an oxide of a mixture containing at least two of the above elements can also be used.
- the target can be manufactured by, for example, a powder sintering method.
- oxygen desorbed from the thin film during interpolation is interpolated to increase the density of the oxide semiconductor layer as much as possible (preferably 6.0 g / cm 3 or more).
- the gas pressure at the time of film formation, the amount of oxygen added (oxygen partial pressure), the input power to the sputtering target, the substrate temperature, and the distance between TS (the distance between the sputtering target and the substrate) are appropriately controlled. It is preferable.
- a film under the following sputtering conditions.
- the preferable gas pressure during film formation is about 1 to 3 mTorr.
- the oxygen addition amount can be controlled so that the carrier concentration (carrier density) of the semiconductor (oxide for semiconductor) is approximately 1 ⁇ 10 15 to 1 ⁇ 10 17 / cm 3 so as to show the operation as a semiconductor.
- the substrate temperature during film formation is controlled within the range of room temperature to 200 ° C.
- the substrate temperature should be as high as possible.
- the oxide density is also affected by the heat treatment conditions after film formation, it is preferably controlled appropriately.
- the heat treatment conditions after the film formation for example, it is recommended that the heat treatment is generally performed at 250 to 400 ° C. for 10 minutes to 3 hours in an air atmosphere.
- the heat treatment include a pre-annealing process (a heat treatment performed immediately after patterning after the oxide semiconductor layer is wet-etched).
- the preferable film thickness of the oxide semiconductor layer formed as described above is approximately 10 nm or more and 200 nm or less.
- the present invention includes a TFT including the oxide as a semiconductor layer of the TFT.
- the TFT is not particularly limited as long as it has at least a gate electrode, a gate insulating film, the above-described oxide semiconductor layer, a source electrode, and a drain electrode on a substrate.
- the density of the oxide semiconductor layer is preferably 6.0 g / cm 3 or more.
- the density of the oxide semiconductor layer is preferably as high as possible, more preferably 6.1 g / cm 3 or more, and still more preferably 6.2 g / cm 3 or more. Note that the density of the oxide semiconductor layer is measured by a method described in Examples described later.
- FIG. 1B further, FIG. 1A.
- the BCE type TFT of FIG. 1B which has a small number of processes and is advantageous for cost reduction, was manufactured.
- FIG. 1B illustrates a bottom-gate TFT, but the present invention is not limited to this.
- a top-gate TFT including a gate insulating film and a gate electrode in this order on an oxide semiconductor layer may be used.
- a gate electrode 2 and a gate insulating film 3 are formed on a substrate 1, and an oxide semiconductor layer 4 is formed thereon.
- a source / drain electrode 5 is formed on the oxide semiconductor layer 4, a protective film (insulating film) 6 is formed thereon, and the transparent conductive film 8 is electrically connected to the drain electrode 5 through the contact hole 7.
- the method for forming the gate electrode 2 and the gate insulating film 3 on the substrate 1 is not particularly limited, and a commonly used method can be employed. Moreover, the kind of metal which forms the gate electrode 2 and the gate insulating film 3 is not specifically limited, The thing used widely can be used.
- metals such as Al and Cu having a low electrical resistivity, refractory metals such as Mo, Cr, and Ti having high heat resistance, and alloys thereof can be preferably used.
- a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like is typically used.
- oxides such as Al 2 O 3 and Y 2 O 3 and those obtained by stacking these can also be used.
- the oxide semiconductor layer 4 is formed.
- the oxide semiconductor layer is preferably formed by a DC sputtering method or an RF sputtering method using a sputtering target having the same composition as the thin film.
- the film may be formed by a co-sputtering method using a plurality of types of sputtering targets.
- the oxide semiconductor layer 4 is subjected to wet etching and then patterned. Immediately after the patterning, it is preferable to perform heat treatment (pre-annealing) for improving the film quality of the oxide semiconductor layer 4 so that the on-state current and field-effect mobility of the transistor characteristics are increased and the transistor performance is improved. Become.
- the source / drain electrodes 5 are formed.
- the type of the source / drain electrode is not particularly limited, and those commonly used can be used.
- a metal or alloy such as Al, Mo, or Cu may be used similarly to the gate electrode, or pure Ti may be used.
- a metal thin film can be formed by magnetron sputtering, then patterned by photolithography, and wet etching is performed to form the electrodes.
- the oxide semiconductor layer 4 is etched and damaged during wet etching, and defects are generated on the surface of the oxide semiconductor 4, so that transistor characteristics may be deteriorated.
- a method of protecting the oxide semiconductor layer 4 by forming an etch stopper layer 9 such as SiO 2 on the oxide semiconductor layer 4 as shown in FIG. Good.
- the etch stopper layer 9 is formed and patterned before the source / drain electrode 5 is formed to protect the channel surface.
- Another method for forming the source / drain electrode 5 is, for example, a method of forming an electrode by a lift-off method after forming a metal thin film by a magnetron sputtering method. According to this method, it is also possible to process the electrode without performing wet etching.
- a protective film (insulating film) 6 is formed over the oxide semiconductor layer 4 by a CVD (Chemical Vapor Deposition) method.
- the surface of the oxide semiconductor film is easily made conductive by plasma damage caused by CVD (probably because oxygen vacancies generated on the surface of the oxide semiconductor become electron donors). Therefore, in order to avoid this problem, in the examples described later, N 2 O plasma irradiation was performed before the formation of the protective film.
- the conditions described in the following document were adopted as the irradiation conditions of N 2 O plasma. J. et al. Park et al., Appl. Phys. Lett. , 93, 053505 (2008).
- the transparent conductive film 8 is electrically connected to the drain electrode 5 through the contact hole 7.
- the types of the transparent conductive film and the drain electrode are not particularly limited, and commonly used ones can be used.
- As the drain electrode for example, those exemplified for the source / drain electrodes described above can be used.
- Example 1 Based on the method described above, the TFT shown in FIG. 1B was fabricated, and the TFT characteristics after the formation of the protective film (insulating film) 6 were evaluated. In this embodiment, the etch stopper layer 9 shown in FIG. 1A is not formed.
- a 100 nm Mo thin film as a gate electrode 2 and a 200 nm SiO 2 film as a gate insulating film 3 were sequentially formed on a glass substrate 1 (Corning Eagle 2000, diameter 100 mm ⁇ thickness 0.7 mm).
- the gate electrode 2 was formed by a DC sputtering method using a pure Mo sputtering target.
- the sputtering conditions were film formation temperature: room temperature, film formation power density: 3.8 W / cm 2 , carrier gas: Ar, gas pressure during film formation: 2 mTorr, and Ar gas flow rate: 20 sccm.
- the gate insulating film 3 is formed by plasma CVD, using a carrier gas: a mixed gas of SiH 4 and N 2 O, a film forming power density: 0.96 W / cm 2 , a film forming temperature: 320 ° C., and a gas during film formation.
- the pressure was formed at 133 Pa.
- oxide semiconductor films (IZGTO, film thickness: 40 nm) having various compositions shown in Table 1 to be described later are formed by sputtering under the following conditions using each sputtering target having a composition close to the oxide thin film.
- Sputtering equipment “CS-200” manufactured by Alpac Co., Ltd.
- Substrate temperature room temperature
- Oxygen partial pressure: 100 ⁇ O 2 / (Ar + O 2 ) 4%
- Each content of the metal element in the oxide semiconductor film thus obtained was analyzed by an XPS (X-ray Photoelectron Spectroscopy) method. Specifically, after sputtering the range from the outermost surface to a depth of about 5 nm with Ar ions, analysis was performed under the following conditions. Note that the oxide thin film measured by the XPS method was a sample in which a thin film having the same composition as that described above was formed to 40 nm on a Si substrate.
- the oxide semiconductor film as described above patterning was performed by photolithography and wet etching.
- wet etchant “ITO-07N” manufactured by Kanto Chemical Co., Ltd., which is an oxalic acid-based wet etching solution for oxide semiconductors, was used. In this example, it was confirmed that there was no residue due to wet etching and that the oxide semiconductor could be etched appropriately for all the oxide thin films tested including IGZO of comparative example (No. 25 in Table 1). is doing.
- pre-annealing treatment was performed to improve the film quality.
- Pre-annealing was performed at 350 ° C. for 1 hour in an air atmosphere.
- a protective film 6 for protecting the oxide semiconductor TFT was formed.
- the protective film 6 a laminated film (total film thickness 350 nm) of SiOx (film thickness 200 nm) and SiNx (film thickness 150 nm) was used.
- the formation of the SiOx and SiNx was performed in the same manner as the gate insulating film described above.
- a mixed gas of N 2 O and SiH 4 was used for forming the SiOx film, and a mixed gas of SiH 4 , N 2 , and NH 3 was used for forming the SiNx film.
- the film formation power density was 0.32 W / cm 2 and the film formation temperature was 150 ° C.
- contact holes 7 for probing for transistor characteristic evaluation were formed in the protective film 6 by photolithography and dry etching.
- an ITO film film thickness: 80 nm
- a carrier gas a mixed gas of argon and oxygen
- a deposition power density 2.56 W / cm 2
- a gas pressure 5 mTorr
- transistor characteristics drain current-gate voltage characteristics, Id-Vg characteristics
- Id-Vg characteristics semiconductor parameter analyzer “HP4156C” manufactured by Agilent Technology. Detailed measurement conditions are as follows. Source voltage: 0V Drain voltage: 10V Gate voltage: -30 to 30V (measurement interval: 0.25V) Substrate temperature: Room temperature
- Threshold voltage The threshold voltage is roughly a value of a gate voltage when the transistor shifts from an off state (a state where the drain current is low) to an on state (a state where the drain current is high).
- the voltage when the drain current is around 1 nA between the on-current and the off-current is defined as the threshold voltage, and the threshold voltage for each TFT is measured.
- the threshold voltage is better near 0V, and if the threshold voltage is on the negative side, leakage current may occur when the thin film transistor is turned off. Therefore, in this embodiment, “A” indicates that Vth is 0.0 V or more and 1.0 V or less, “B” indicates that Vth is greater than 1 V and 5 V or less, and “C” indicates that Vth is less than 0.0V and ⁇ 5 V or more. The case where the voltage was more than 5V or less than ⁇ 5V was evaluated as “D”.
- ⁇ FE Field effect mobility
- the field effect mobility ⁇ FE was derived from the TFT characteristics in a saturation region where Vg> Vd ⁇ Vth. In the saturation region, Vg is the gate voltage, Vd is the drain voltage, Id is the drain current, L and W are the channel length and channel width of the TFT element, Ci is the capacitance of the gate insulating film, and ⁇ FE is the field effect mobility. It was.
- ⁇ FE is derived from the following equation.
- the field effect mobility ⁇ was derived from the slope of the drain current-gate voltage characteristic (Id-Vg characteristic) in the vicinity of the gate voltage satisfying the linear region.
- Table 1 shows the field effect mobility ⁇ FE after the stress application test described later.
- the field effect mobility ⁇ FE is related to the switching speed of the thin film transistor, and the higher the better.
- mu FE is less than 4.9 cm 2 / Vs "D”
- the case of Vs or higher was evaluated as “A”.
- ⁇ Vth Stress tolerance
- a stress application test is performed by simulating the actual environment (stress) when driving a liquid crystal panel, applying a negative bias to the gate electrode while irradiating the sample with light (white light).
- a fluctuation value of threshold voltage before and after (threshold voltage shift amount: ⁇ Vth) was used as an index of light stress resistance in TFT characteristics.
- Light stress resistance is an important characteristic for driving a liquid crystal display.
- the conditions of the stress application test are as follows. ⁇ Source voltage: 0V ⁇ Drain voltage: 10V ⁇ Gate voltage: -20V -Substrate temperature: 60 ° C -Stress application time: 2 hours-Light source: White LED (LED LXHL-PW01 manufactured by PHILIPTS)
- the threshold voltage shift amount ( ⁇ Vth) before and after the stress application test the better.
- the threshold voltage change amount is less than 2.0 V
- the case where the threshold voltage is 2.0 V or more and 4.8 V or less is evaluated as “B”
- the case where it is over 4.8 V is evaluated as “D”. did.
- the case where the etching rate was 1 m / s or less was determined as “B (pass)”, and the case where the etching rate was higher than 1 m / s was determined as “D (fail)”.
- the surface (back channel) side of the oxide semiconductor layer is not scraped or damaged by the etchant when wet etching the source / drain electrodes, and TFT characteristics and stress resistance Excellent.
- the carrier density of the oxide film was measured by a van der Paw method using a Hall measuring device (“Retest 8310” manufactured by Toyo Technica).
- the sample used for the hole measurement was formed by forming a 5 mm square oxide semiconductor thin film (thickness: 200 nm) as an element on a glass substrate by a mask sputtering method, and then using the mask sputtering method in the same manner as an Mo electrode. Were formed at the four corners of the square pattern of the oxide semiconductor thin film. Electrode wires were respectively attached to the four electrodes using a conductive paste, and the carrier density was calculated from the measurement results of specific resistance and Hall coefficient. The measurement was performed at an applied magnetic field of 0.5 T and a measurement temperature of room temperature.
- Table 1 columns for measured values and evaluations are provided for each characteristic column. Further, a comprehensive evaluation column is provided in the rightmost column of Table 1, and among the above characteristics (threshold voltage, stress resistance, field effect mobility, wet etching resistance), there is no “D” and “A “A” when there are 3 or more, “B” when there is no “D” and 2 or less “A”, “D” when there is at least 1 "D", It was attached.
- No. 1 in Table 1. 25 also shows the result of IGZO used for comparison.
- the carrier densities of 1, 2 and 4 are 4.0 ⁇ 10 15 / cm 3 , 2.3 ⁇ 10 16 / cm 3 and 1.5 ⁇ 10 15 / cm 3 , respectively. 1 ⁇ 10 15 to 1 ⁇ 10 17 / cm 3 ).
- No. All of the above examples other than 1, 2, and 4 are confirmed to satisfy the acceptance criteria of the present invention.
- No. No. 9 is an example in which [Sn] is small and the relationship of the expression (4) is not satisfied, and the wet etching resistance is lowered.
- the oxide semiconductor surface was damaged and turned into a conductor and did not exhibit switching characteristics, mobility, Vth, and ⁇ Vth could not be measured (“-” in both columns).
- No. No. 26 is an experiment conducted by simulating the composition of IZGTO described in Patent Document 1 described above. That is, no. No. 26 is small because [Sn] is small and does not satisfy the relationship of formula (4), [In] is large and does not satisfy the relationship of formula (3), and does not satisfy the relationship of formula (1). The etching resistance decreased, and the stress resistance also decreased.
- No. No. 27 is an example in which [Sn] is small, wet etching resistance was reduced, and stress resistance was also reduced. This is presumably because the back channel of the oxide semiconductor was damaged along with a decrease in wet etching resistance.
- FIG. 3A shows the result of measuring Id-Vg characteristics and FIG. 3B shows the result of resistance to light stress for a TFT using the IZGTO film of Example 1 (invention example) as a semiconductor layer.
- the above Id-Vg characteristics are the results when the drain current was measured by applying 0 V and 10 V to the source and drain electrodes, respectively, and changing the gate voltage from -30 to 30 V.
- the TFT using the IZGTO film of the example of the present invention shifts from an off state with a low drain current to an on state with a high drain current and exhibits good switching characteristics.
- FIG. 3B shows the results of examining light stress resistance.
- white light is irradiated while applying a negative bias to the gate electrode.
- holes generated by light irradiation are trapped in the semiconductor or at the interface between the gate insulating film and the semiconductor layer. Therefore, it was observed that the threshold voltage shifted to the negative side with time. It can be seen from FIG. 3B that the shift amount of the threshold voltage due to light stress is 1.8V.
- FIG. 4 shows No. 1 in Table 1.
- FIG. 2 is an In—Zn—Sn phase diagram showing the atomic ratio of three elements of In, Zn, and Sn according to the amount of Ga for IZGTO of 1 to 24.
- the formulas (1) to (2) An area satisfying the above relationship is illustrated.
- those satisfying the requirements of the present invention are marked with ⁇ , and those not satisfying are marked with x.
- Ga 37.0%) does not satisfy the relationship of the above formula (2) because Ga is large and Zn is shifted to a high amount in the In—Zn—Sn phase diagram of FIG. 4C. , Mobility decreased. Thus, it can be seen that Ga is high and the mobility is low in the composition on the high Zn side in the In—Zn—Sn phase diagram.
- Example 2 In this example, the relationship between the amount of Sn [Sn] in all metal elements and wet etching resistance in IZGTO was examined. The wet etching test was performed in the same manner as in Example 1 described above.
- the thin film was formed by sputtering using sputtering targets having different amounts of Sn.
- the horizontal axis represents the Sn amount ([Sn]) with respect to the total amount of all metal elements, and the vertical axis represents the wet etching rate.
- FIG. 5 shows that when the Sn amount is less than 5%, the wet etching rate rapidly increases. On the other hand, when the Sn amount is 5% or more, the wet etching rate is very small, and the oxide thin film is not etched.
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Abstract
Description
すなわち、酸化物半導体薄膜を加工する際に用いられるシュウ酸などの有機酸系ウェットエッチング液により、上記酸化物半導体薄膜が適切な速度でエッチングされ、残渣なくパターニングできることが要求される。
すなわち、酸化物半導体薄膜の上に成膜されるソース・ドレイン電極用配線膜を加工する際に用いられるウェットエッチング液(例えばリン酸、硝酸、酢酸などを含む無機酸)により、ソース・ドレイン電極は適切な速度でエッチングされるが、上記酸化物半導体薄膜の表面(バックチャネル)側が上記ウェットエッチング液によって削れたり、ダメージが入ってTFT特性やストレス耐性が低下しないようにすることが要求される。
1.67×[Zn]+1.67×[Ga]≧100 ・・・(1)
([Zn]/0.95)+([Sn]/0.40)+([In]/0.4)
≧100 ・・・(2)
[In]≦40 ・・・(3)
[Sn]≧5 ・・・(4)
12≦[In]≦20 ・・・(5)
17≦[Sn]≦25 ・・・(6)
15≦[Ga]≦20 ・・・(7)
40≦[Zn]≦50 ・・・(8)
本発明の薄膜トランジスタの好ましい実施形態において、上記半導体層の密度は6.0g/cm3以上である。
1.67×[Zn]+1.67×[Ga]≧100 ・・・(1)
([Zn]/0.95)+([Sn]/0.40)+([In]/0.4)
≧100 ・・・(2)
[In]≦40 ・・・(3)
[Sn]≧5 ・・・(4)
12≦[In]≦20 ・・・(5)
17≦[Sn]≦25 ・・・(6)
15≦[Ga]≦20 ・・・(7)
40≦[Zn]≦50 ・・・(8)
1.67×[Zn]+1.67×[Ga]≧100 ・・・(1)
([Zn]/0.95)+([Sn]/0.40)+([In]/0.4)
≧100 ・・・(2)
[In]≦40 ・・・(3)
[Sn]≧5 ・・・(4)
(i)ZnとGaで構成される上記式(1)を満足するものは、主にストレス耐性が向上し(ΔVth≦4.8V)、
(ii)Zn、Sn、およびInで構成される上記式(2)を満足するものは、主に移動度が向上し(μFE≧4.9m2/Vs)、
(iii)全金属元素中のIn比([In])を規定した上記式(3)を満足するものは、主にTFT特性やストレス耐性が向上し、
(iv)全金属元素中のSn比([Sn])を規定した上記式(4)を満足するものは、主にウェットエッチング耐性(更にはTFT特性、ストレス耐性、移動度)が向上することを見出した。そして上記式(1)~(4)のすべてを満足するようにIZGTOの組成を制御すると、所望とする特性をすべて兼ね備えた酸化物半導体層が得られることを見出し、本発明を完成した。
12≦[In]≦20 ・・・(5)
17≦[Sn]≦25 ・・・(6)
15≦[Ga]≦20 ・・・(7)
40≦[Zn]≦50 ・・・(8)
J.Parkら、Appl.Phys.Lett.,93,053505(2008)。
前述した方法に基づき、図1Bに示すTFTを作製し、保護膜(絶縁膜)6の形成後のTFT特性を評価した。本実施例では、図1Aに記載のエッチストッパー層9は形成していない。
ゲート電極2は、純Moのスパッタリングターゲットを使用し、DCスパッタ法により形成した。スパッタリング条件は、成膜温度:室温、成膜パワー密度:3.8W/cm2、キャリアガス:Ar、成膜時のガス圧:2mTorr、Arガス流量:20sccmとした。
またゲート絶縁膜3は、プラズマCVD法を用い、キャリアガス:SiH4とN2Oの混合ガス、成膜パワー密度:0.96W/cm2、成膜温度:320℃、成膜時のガス圧:133Paで形成した。
スパッタリング装置:株式会社アルパック社製「CS-200」
基板温度:室温
ガス圧:1mTorr
酸素分圧:100×O2/(Ar+O2)=4%
成膜パワー密度:2.55W/cm2
X線源:Al Kα
X線出力:350W
光電子取り出し角:20°
トランジスタ特性(ドレイン電流-ゲート電圧特性、Id-Vg特性)の測定は、Agilent Technology社製「HP4156C」の半導体パラメータアナライザーを使用した。詳細な測定条件は以下のとおりである。
ソース電圧 :0V
ドレイン電圧:10V
ゲート電圧 :-30~30V(測定間隔:0.25V)
基板温度 :室温
しきい値電圧とは、おおまかにいえば、トランジスタがオフ状態(ドレイン電流の低い状態)からオン状態(ドレイン電流の高い状態)に移行する際のゲート電圧の値である。本実施例では、ドレイン電流が、オン電流とオフ電流の間の1nA付近であるときの電圧をしきい値電圧と定義し、各TFT毎のしきい値電圧を測定した。
電界効果移動度μFEは、TFT特性から、Vg>Vd-Vthである飽和領域にて導出した。飽和領域では、Vgをゲート電圧、Vdをドレイン電圧、Idをドレイン電流、L、WをそれぞれTFT素子のチャネル長、チャネル幅、Ciをゲート絶縁膜の静電容量、μFEを電界効果移動度とした。μFEは以下の式から導出される。本実施例では、線形領域を満たすゲート電圧付近におけるドレイン電流-ゲート電圧特性(Id-Vg特性)の傾きから電界効果移動度μを導出した。本実施例では、後述するストレス印加試験実施後の電界効果移動度μFEを表1に記載した。
本実施例では、実際の液晶パネル駆動時の環境(ストレス)を模擬して、試料に光(白色光)を照射しながら、ゲート電極に負バイアスをかけ続けるストレス印加試験を行い、ストレス印加試験前後のしきい値電圧の変動値(しきい値電圧シフト量:ΔVth)をTFT特性における光ストレス耐性の指標とした。光ストレス耐性は液晶ディスプレイを駆動する上で重要な特性である。
・ソース電圧:0V
・ドレイン電圧:10V
・ゲート電圧:-20V
・基板温度:60℃
・ストレス印加時間:2時間
・光源:白色LED(PHILIPTS社製LED LXHL-PW01)
ウェットエッチング耐性は、以下の試料を用いて評価した。具体的には、ガラス基板上に各酸化物半導体層を成膜した試料を用意し、ウェットエッチング液[リン酸:硝酸:酢酸=70:2:10(質量比)、液温:室温]中に、上記試料を浸漬してエッチングを行った。エッチング前後の酸化物半導体薄膜の膜厚の変化(削れ量)を測定し、エッチング時間との関係に基づき、エッチング速度(Å/秒)を算出した。なお、ウェットエッチング耐性の評価に用いたガラス基板の種類、および酸化物半導体層の成膜条件は、前述したTFTの作製条件と同じである。
また、一部の試料について、酸化物膜の密度を、XRR(X線反射率法)を用いて測定した。詳細な測定条件は以下のとおりである。
・ターゲット:Cu(線源:Kα線)
・ターゲット出力:45kV-200mA
・膜密度測定用試料の作製
ガラス基板上に各組成の酸化物を下記スパッタリング条件で成膜した(膜厚100nm)後、前述したTFT製造過程におけるプレアニール処理を模擬して、当該プレアニール処理と同じ熱処理を施したしたものを使用
スパッタガス圧:1mTorr、3mTorrまたは5mTorr
酸素分圧:100×O2/(Ar+O2)=2%
成膜パワー密度:DC2.55W/cm2
熱処理:大気雰囲気にて350℃で1時間
また、一部の試料について、酸化物膜のキャリア密度を、ホール測定装置(東洋テクニカ社製「Resitest 8310」)を用いてvan der Paw法により測定した。ホール測定に使用した試料は、ガラス基板上に素子として5mm角サイズの正方形状の酸化物半導体薄膜(膜厚200nm)をマスクスパッタ法にて形成したあと、同様にマスクスパッタ法を用いてMo電極を酸化物半導体薄膜の正方形パターンの4隅に形成した。4つの電極にそれぞれ電極線を導電性ペーストを用いて取りつけ、比抵抗およびホール係数の測定結果からキャリア密度を算出した。測定は、印加磁界を0.5T、測定温度を室温として行った。
本実施例では、IZGTOにおける、全金属元素中のSn量[Sn]と、ウェットエッチング耐性との関係を調べた。ウェットエッチング試験は、前述した実施例1と同様にして行った。
2 ゲート電極
3 ゲート絶縁膜
4 酸化物半導体層
5 ソース・ドレイン電極
6 保護膜(絶縁膜)
7 コンタクトホール
8 透明導電膜
9 エッチストッパー層
Claims (9)
- 基板上に、ソース電極、ドレイン電極、ゲート電極、ゲート絶縁膜、半導体層および保護膜を備えた薄膜トランジスタの半導体層に用いられる酸化物であって、
前記酸化物は、In、Zn、Ga、Sn、およびOから構成されると共に、
前記酸化物中、酸素を除く全金属元素に対する各金属元素の含有量(原子%)をそれぞれ、[In]、[Zn]、[Ga]、および[Sn]としたとき、下式(1)~(4)を満足することを特徴とする半導体層用酸化物。
1.67×[Zn]+1.67×[Ga]≧100 ・・・(1)
([Zn]/0.95)+([Sn]/0.40)+([In]/0.4)≧100 ・・・(2)
[In]≦40 ・・・(3)
[Sn]≧5 ・・・(4) - さらに下式(5)~(8)を満足する請求項1に記載の半導体層用酸化物。
12≦[In]≦20 ・・・(5)
17≦[Sn]≦25 ・・・(6)
15≦[Ga]≦20 ・・・(7)
40≦[Zn]≦50 ・・・(8) - キャリア密度が1×1015~1×1017/cm3である請求項1に記載の半導体層用酸化物。
- 請求項1~3のいずれか1項に記載の半導体層用酸化物を薄膜トランジスタの半導体層として備えたことを特徴とする薄膜トランジスタ。
- 前記半導体層の密度は6.0g/cm3以上である請求項4に記載の薄膜トランジスタ。
- 請求項1~3のいずれか1項に記載の半導体層用酸化物を形成するためのスパッタリングターゲットであって、
In、Zn、Ga、およびSnを含み、全金属元素に対する各金属元素の含有量(原子%)をそれぞれ、[In]、[Zn]、[Ga]、および[Sn]としたとき、下式(1)~(4)を満足することを特徴とするスパッタリングターゲット。
1.67×[Zn]+1.67×[Ga]≧100 ・・・(1)
([Zn]/0.95)+([Sn]/0.40)+([In]/0.4)≧100 ・・・(2)
[In]≦40 ・・・(3)
[Sn]≧5 ・・・(4) - さらに下式(5)~(8)を満足する請求項6に記載のスパッタリングターゲット。
12≦[In]≦20 ・・・(5)
17≦[Sn]≦25 ・・・(6)
15≦[Ga]≦20 ・・・(7)
40≦[Zn]≦50 ・・・(8) - 請求項4に記載の薄膜トランジスタを備えたことを特徴とする表示装置。
- 請求項5に記載の薄膜トランジスタを備えたことを特徴とする表示装置。
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Also Published As
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KR101626241B1 (ko) | 2016-05-31 |
JP2014007383A (ja) | 2014-01-16 |
TW201410895A (zh) | 2014-03-16 |
KR20150016271A (ko) | 2015-02-11 |
US20150076489A1 (en) | 2015-03-19 |
CN104335354B (zh) | 2018-07-20 |
TWI496914B (zh) | 2015-08-21 |
JP6068232B2 (ja) | 2017-01-25 |
CN104335354A (zh) | 2015-02-04 |
US9647126B2 (en) | 2017-05-09 |
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