WO2013166951A1 - 一种高精度金属掩模板的混合制作工艺 - Google Patents
一种高精度金属掩模板的混合制作工艺 Download PDFInfo
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- WO2013166951A1 WO2013166951A1 PCT/CN2013/075226 CN2013075226W WO2013166951A1 WO 2013166951 A1 WO2013166951 A1 WO 2013166951A1 CN 2013075226 W CN2013075226 W CN 2013075226W WO 2013166951 A1 WO2013166951 A1 WO 2013166951A1
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- WO
- WIPO (PCT)
- Prior art keywords
- core mold
- electroforming
- metal mask
- etching
- manufacturing
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
- B41C1/142—Forme preparation for stencil-printing or silk-screen printing using a galvanic or electroless metal deposition processing step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
- B41C1/147—Forme preparation for stencil-printing or silk-screen printing by imagewise deposition of a liquid, e.g. from an ink jet; Chemical perforation by the hardening or solubilizing of the ink impervious coating or sheet
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C23F1/04—Chemical milling
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the invention relates to the field of material preparation and processing, and relates to a manufacturing process of a mask for vapor deposition, in particular to a preparation process of a high-precision mask for vapor deposition of 0LED. Background technique
- the organic electroluminescent display has a series of advantages such as autonomous illumination, low voltage direct current driving, full curing, wide viewing angle, and rich color.
- the organic electroluminescent display does not require a backlight, has a large viewing angle, and has a power. Low, its response speed can reach 1000 times that of liquid crystal display, and its manufacturing cost is lower than that of liquid crystal display with the same resolution. Therefore, organic electroluminescent displays have broad application prospects and are regarded as one of the most competitive future flat panel display technologies.
- Top-emitting organic display has many advantages such as all-solid-state, active illumination, high contrast, ultra-thin, low power consumption, no viewing angle limitation, fast response, shock resistance, wide working range, easy implementation of flexible display and 3D display. , gradually become the fastest growing new display technology in the next 20 years.
- a conventional top-emitting OLED structure is composed of an anode (first electrode), a cathode (second electrode), and an organic light-emitting layer interposed between the anode and the cathode.
- the luminescence mechanism and process of OLED are to inject electrons and holes from the cathodes and cathodes respectively. The injected electrons and holes are transported in the organic layer and recombine in the luminescent layer, thereby exciting the luminescent layer molecules to generate singlet excitons. Singlet exciton radiation decays and illuminates.
- the anode of the existing bottom-emitting OLED device is mostly made of indium oxide-tin (ITO) as a raw material, and is coated by an RF sputtering method to form an electrode, and the film is a single-layer film structure.
- the top-emitting OLED device is then coated with a reflective layer on the transparent anode ITO.
- ITO indium oxide-tin
- the use of RF sputtering to fabricate tantalum anodes is susceptible to poor process control factors resulting in surface irregularities that result in the formation of tipped materials or protrusions on the surface.
- the high temperature calcination and recrystallization process also provides the opportunity for holes to be directly incident on the cathode, thereby increasing the leakage current and affecting the luminous efficiency of the OLED.
- the electrode made of ITO has a large resistance, which tends to increase heat generation and power consumption. Summary of the invention
- the present invention provides a high-precision metal mask mixing process, which is effective for solving the chemical etching method used in the conventional process, and has a mask which is difficult to demold and has poor precision. Wait question.
- the present invention provides a method for preparing a metal mask, comprising the steps of: electroforming: providing a core mold, and pre-treating the core mold to provide a single-sided film, Exposing and developing the film surface of the core mold, then electrodepositing the core mold, and then post-processing to obtain an electroformed sheet having a core mold surface and a substrate surface; and etching step: the electroforming plate
- the core mold surface and the substrate surface are respectively coated, and the core mold surface and the substrate surface of the film are exposed, and then the exposed substrate surface is developed and etched, and then sequentially washed, faded, and post-treated. After the process, the core mold face is peeled off to obtain a mask.
- the step of electroforming comprises: a. degreasing, pickling, and sandblasting the core mold to remove oily impurities on the surface and smoothing the surface; b. Coating a surface of the mandrel; c, exposing the open area of the pattern to remove the dry film of the unexposed area by development, leaving the exposed portion as a protective film for the subsequent electroforming step; d, exposing the above The unexposed portion of step c is developed, leaving the exposed portion as a protective film for the subsequent electroforming step; e.
- the core mold used in the above step e is any one of stainless steel 201, 202, 301, 304, 420JK or 420J2, and in the electroforming process, the core mold serves as a cathode substrate; Any one of an anode nickel block or an anode nickel plate is used.
- the electroformed plate has a thickness of 10 to 50 ⁇ m
- the prepared electroforming material is a magnetic nickel or nickel alloy material.
- the nickel alloy material is one of a nickel-iron alloy, a nickel-cobalt alloy, and a nickel-iron-cobalt alloy.
- the vertical cross-section of the electroformed opening in step e is tapered.
- the size of the electroformed opening is 0.01 to 0.1 mm.
- the size of the electroformed opening is 0.01 to 0.05 mm.
- the step of etching specifically includes: a, applying a film to the core mold surface and the substrate surface of the electroformed board; b, placing the electroformed board outside the open area of the substrate surface The area and the core mold face are double-sided exposed, so that the dry film of the unexposed area is removed by development, leaving the exposed portion as a protective film for the subsequent etching step; c.
- the unexposed portion of the substrate surface of the electroformed plate Developing, leaving the exposed portion as a protective film for the subsequent etching step; d, etching the exposed surface of the substrate surface of the electroformed plate by the prepared etching liquid; e, passing the exposed dry film which is not removed in the above development process The immersion brushing of the prepared fading liquid is removed; f. de-oiling, pickling, and air-drying the electroformed board; and g, peeling off the core mold surface to obtain a mask.
- the etching depth in the step d is 50% to 100% of the thickness of the electroformed plate.
- the etching depth in the step d is 100% of the thickness of the electroformed plate.
- the edge of the groove etched in the above step d coincides with the edge of the opening of the vapor deposition surface.
- the vertical section of the groove etched in the step d is a bowl shape.
- the groove angle of the groove etched in the step d is 30° to 50°.
- the method for manufacturing a metal mask further includes: a step of detecting, performing quality inspection on the mask under peeling; and an assembly step of passing the qualified mask through welding , the bonding, the screw lock is fixed on a mask frame to form a mask module; the step of detecting the finished product, performing quality inspection on the assembled mask component; and the step of packaging, passing the test
- the mask board assembly is packaged in the outer casing, and the finished product is shipped.
- the wall of the hole shields the vapor deposition material, which improves the vapor deposition rate, and the smooth electroformed hole wall is released from the etched hole wall, and does not affect the material on the vapor deposition.
- Figure 1 is a cross-sectional view showing the opening of the electroforming process of the present invention.
- Figure 2 shows an open cross-sectional view of a double sided etch process.
- Fig. 3 is a cross-sectional view showing the opening of the present invention which is continuously etched on the basis of electroforming.
- Figure 4 shows a perspective view of a high precision metal mask produced by the method of the present invention.
- the embodiment of the invention provides a method for preparing a metal mask plate, and adopts a mixing process of electroforming and then etching to form a mask plate with an opening with a taper.
- the mixing method comprises the following steps:
- a step of electroforming providing a core mold, pre-treating the core mold, and applying a single-sided film to the core mold
- the film surface is exposed and developed, and then the core mold is electrodeposited, and then the electroformed sheet having the core mold surface and the substrate surface is obtained after the film is removed and post-treated.
- the step of electroforming carries out the pre-treatment of the stainless steel core mold 304 for degreasing, pickling and sand blasting, removing dirt and impurities on the surface thereof, and increasing the surface roughness thereof.
- a stainless steel 304 core mold On a stainless steel 304 core mold, a single-sided photosensitive film or a photosensitive adhesive is applied, and a photosensitive film or a photosensitive adhesive to be formed into an opening pattern area is exposed by scanning exposure, as an electroforming protective film, an unexposed photosensitive film or a photosensitive adhesive is subsequently
- the developing process is washed away with an alkali solution to expose the core mold and form a region of the metal material to be deposited in the subsequent electroforming.
- the developed mandrel is placed in an electroforming tank, the electroforming parameters are adjusted, and the electroformed metal material is deposited into the dry film free zone. Specifically include:
- the process of pre-treatment of the core mold the core mold is degreased, pickled, sandblasted to remove oily impurities on the surface, and the surface is smoothed; in more detail, the parameters of the pretreatment process:
- the degreasing time is lmin
- the pickling time is lmin
- the blasting time is lmin blasting pressure is 2.0kg/cm 2 .
- the process of the single-sided film is applied to a surface of the mandrel; in more detail, the parameters of the filming process are: a temperature of 1 10 ° C, a speed of 1.4 m/min, and a pressure of 0.6 MPa.
- the process of single-sided development exposing the unexposed portion of the above step c to development, leaving the exposed portion as a protective film for the subsequent electroforming step; in more detail, the parameters of the single-sided development process are: 0.7 %Na2CO3 solution, activation parameters: activation time is 8 min, activation temperature is 25 °C, and activation solution concentration is 1 mol/L.
- electroforming (electrodeposition) process immersing the core mold in a preliminary electroforming tank, depositing the prepared electroforming material into the dry film-free region, and obtaining a core mold having a substrate surface; in more detail,
- the electroforming process parameters pH 3.4, temperature 35 ° C, current density 1.4 A / dm 2 .
- the composition of the electroforming liquid 240 g/L of nickel sulfate, 35 g/L of nickel chloride and 40 g/L of ferrous sulfate.
- the composition of the additive for the electroforming liquid 2 ml/L for the stabilizer, 3 ml/L for the wetting agent, and 3 ml/L for the spacer.
- the above electroforming parameters are made of an electroformed substrate having a thickness of 50 ⁇ m, and have an opening pattern, a smooth open wall, and high dimensional accuracy.
- the dimensional accuracy of the vapor-deposited opening of the electroforming is ⁇ 1 ⁇ , and the positional accuracy is ⁇ 5 ⁇ .
- the smooth electroformed hole wall is easier to demold than the etched hole wall and does not affect the material that has been vaporized.
- FIG. 1 there is shown an opening sectional view of the electroforming process of the present invention: wherein the electroforming thickness is t'z, the crucible is the opening dimension of the crucible, 1 is the vapor deposition surface, and 2 is the ITO surface (when electroforming) Close to the mandrel). Due to electricity Casting is an additive process, and is electrodeposited. The opening is formed by metal ions attached to the photosensitive film or the photosensitive gel. Therefore, the surface of the opening wall is smooth, and the opening size is high in precision, and the control can be arbitrarily added. The reduction and the etching process are different depending on the type of tile material.
- the core mold (ie, the cathode substrate) used in the above step e may also be any one of stainless steel 201, 202, 301, 420JK or 420J2; the anode is made of an anode nickel block or an anode nickel. Any of the boards.
- the electroformed plate has a thickness of 10 to 50 ⁇ m
- the prepared electroforming material is a magnetic nickel or nickel alloy material.
- the nickel alloy material is one of a nickel-iron alloy, a nickel-cobalt alloy, and a nickel-iron-cobalt alloy.
- the vertical section of the electroformed opening formed in the above step e is tapered.
- the size of the electroformed opening is 0.01 to 0.1 mm.
- the size of the electroformed opening is 0.01 to 0.05 mm.
- the core mold having the substrate surface is degreased, pickled, and air-dried to obtain an electroformed plate having a core surface and a substrate surface.
- the core mold surface and the substrate surface of the electroformed sheet are respectively coated, and the core mold surface and the substrate surface of the film are exposed, and then the exposed substrate surface is developed and etched, and then sequentially After the steps of washing, fading, and post-treatment, the core mold faces are peeled off to obtain a mask.
- the substrate obtained in the above electroforming step is coated on the double-sided photosensitive film or the photosensitive adhesive together with the core mold, and the photosensitive film or the photosensitive adhesive on one side of the core mold is completely exposed; the area to be etched on one side of the substrate Retention, exposure of other areas, exposure of the photosensitive film or photoresist as a protective film in the subsequent etching process, the protective substrate and the core mold are not corroded by the etching solution; the unexposed photosensitive film or the photosensitive paste is removed by the lye, so that The surface of the substrate to be etched is leaked out, etched by a corrosive liquid, and the depth to be etched is controlled by controlling the etching transfer speed or the concentration of the etchant.
- a groove of a certain depth is etched, and the wall of the groove is in the shape of a bowl. Specifically include:
- a double-sided exposure process exposing a region other than the open area of the electroformed plate substrate surface and the core mold surface to remove the dry film of the unexposed area by development, leaving the exposed portion for subsequent A protective film for the etching step.
- One-sided development process developing the unexposed portion of the substrate surface of the electroformed plate, leaving the exposed portion as a protective film for the subsequent etching step.
- d. Single-sided etching process, the surface exposed by the substrate surface of the electroformed plate is etched by the prepared etching liquid; specifically, the etching depth is 50% to 100% of the thickness of the electroformed plate. Preferably, the etching depth in the step d is 100% of the thickness of the electroformed plate.
- the edge of the etched groove coincides with the edge of the opening of the vapor deposition surface.
- the etched grooves have a vertical profile in the shape of a bowl.
- the etched groove has a section angle e of 30° to 50°.
- the specific composition of the etching liquid was as follows: ferric chloride was 200 g/L, hydrochloric acid was 2 g/L, and sodium hypochlorite was 0.2 g/L.
- Etching process parameters specific gravity of 1.45, pH of 1.4, temperature of 55 ° C, pressure of 45 kg / cm 2 .
- the above etching parameters were such that the groove depth was 40 ⁇ m, that is, the effective vapor deposition opening thickness was 10 ⁇ m.
- the groove formed by the etching forms a bowl-shaped hole wall, and is combined with the electroformed opening to obtain an opening satisfying the evaporation requirement, and the bowl-shaped hole wall has a large taper, thereby avoiding the wall-to-vapor deposition during the evaporation process. The occlusion of the material increases the vapor deposition rate.
- FIG. 2 an open cross-sectional view of a double-sided etching process is shown, in which a double-sided etching is used to form a gourd-like opening from the two sides of the tile material, but since the etching is a subtractive process, There is also a side corrosion effect, so that the opening size 11 of the surface of the sheet is larger than the predetermined size 12, the dimensional accuracy is not well controlled, the size is deviated, and the opening wall formed by etching is not rough.
- T1 is the etching depth of the surface
- t2 is the etching depth of the vapor deposition surface.
- FIG. 3 there is shown an opening cross-sectional view of the present invention which is continuously etched on the basis of electroforming.
- 1 is a vapor deposition surface
- 2 is a tantalum surface
- 3 is an etching groove
- ⁇ is a crucible.
- the surface opening size is the effective evaporation opening width
- t'2 is the depth of the etching groove
- t'l is the thickness of the unetched process
- t'l+t'2 t'z
- ⁇ is the etching groove Section angle.
- T'2 (50% ⁇ 100%) t'z.
- a perspective view of a high-precision metal mask obtained by the method of the present invention is shown. Among them, 1 is the vapor deposition surface, 3 is the etching recess, and 4 is the high tight metal mask.
- the preparation process of the high-precision metal mask provided by the present invention of the present invention further includes:
- the step of detecting, the quality of the mask plate after peeling is performed; the step of assembling, fixing the qualified mask plate to a mask frame by any one of welding, bonding, and screw locking to form a mask Modular parts.
- the step of finished product inspection the assembled mask component is subjected to quality inspection.
- the packaging step will test the qualified mask board assembly package and ship the finished product.
- the metal mask is provided in the mixing process of the metal mask, the opening by the electroforming and etching process, the hole wall is smooth, the dimensional precision is high, and the dimensional accuracy of the vapor deposition surface is obtained by electroforming.
- the positional accuracy is ⁇ 5 ⁇
- the groove obtained by etching forms a bowl-shaped hole wall, which is combined with the electroformed opening to obtain an opening satisfying the evaporation requirement, and the bowl-shaped hole wall has a large taper.
- the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020147031429A KR101911416B1 (ko) | 2012-05-08 | 2013-05-07 | 고정밀도 금속 마스크의 혼합 제작 공정 |
JP2015510623A JP5969114B2 (ja) | 2012-05-08 | 2013-05-07 | 高精度メタルマスクの混合作製工程 |
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CN201210139817.8 | 2012-05-08 | ||
CN201210139817.8A CN103388121B (zh) | 2012-05-08 | 2012-05-08 | 一种高精度金属掩模板的混合制作工艺 |
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WO2013166951A1 true WO2013166951A1 (zh) | 2013-11-14 |
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PCT/CN2013/075226 WO2013166951A1 (zh) | 2012-05-08 | 2013-05-07 | 一种高精度金属掩模板的混合制作工艺 |
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JP (1) | JP5969114B2 (zh) |
KR (1) | KR101911416B1 (zh) |
CN (1) | CN103388121B (zh) |
TW (1) | TWI513080B (zh) |
WO (1) | WO2013166951A1 (zh) |
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US20150068455A1 (en) * | 2013-09-10 | 2015-03-12 | Samsung Display Co., Ltd. | Method of manufacturing metal mask and metal mask formed thereby |
CN105714248A (zh) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | 一种高精度蒸镀用复合掩模板组件制作方法 |
CN108728790A (zh) * | 2017-04-21 | 2018-11-02 | 苏州苏大维格光电科技股份有限公司 | Amoled用金属掩膜板的制造方法 |
CN109219897A (zh) * | 2016-05-24 | 2019-01-15 | 应用材料公司 | 具有抗等离子体涂层的阴影掩模 |
EP3419074A4 (en) * | 2016-02-16 | 2019-03-20 | LG Innotek Co., Ltd. | METAL PLATE, MASK FOR DEPOSITION, AND METHOD OF MANUFACTURING THEREOF |
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US11066738B2 (en) | 2018-03-30 | 2021-07-20 | Kunshan Go-Visionox Opto-Electronics Co., Ltd. | Mask plates and display panels |
EP3993075A1 (en) * | 2015-04-24 | 2022-05-04 | Lg Innotek Co. Ltd | Deposition mask |
CN116511842A (zh) * | 2023-04-27 | 2023-08-01 | 寰采星科技(宁波)有限公司 | 一种精密金属掩模板的制作方法及精密金属掩模板 |
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CN103882375B (zh) * | 2014-03-12 | 2016-03-09 | 京东方科技集团股份有限公司 | 一种掩膜板及其制作方法 |
CN104593722B (zh) * | 2014-12-23 | 2017-06-06 | 深圳市华星光电技术有限公司 | 掩膜板的制作方法 |
CN106033802B (zh) * | 2015-03-17 | 2018-06-29 | 上海和辉光电有限公司 | 一种蒸镀用掩模板及其制作方法 |
WO2017045122A1 (en) * | 2015-09-15 | 2017-03-23 | Applied Materials, Inc. | A shadow mask for organic light emitting diode manufacture |
WO2017204223A1 (ja) * | 2016-05-23 | 2017-11-30 | 凸版印刷株式会社 | 蒸着用メタルマスク、蒸着用メタルマスクの製造方法、および、蒸着用メタルマスク形成基材 |
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Also Published As
Publication number | Publication date |
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TW201347267A (zh) | 2013-11-16 |
TWI513080B (zh) | 2015-12-11 |
CN103388121A (zh) | 2013-11-13 |
KR101911416B1 (ko) | 2018-10-24 |
KR20150021914A (ko) | 2015-03-03 |
JP5969114B2 (ja) | 2016-08-10 |
JP2015518524A (ja) | 2015-07-02 |
CN103388121B (zh) | 2017-07-11 |
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