WO2013166951A1 - 一种高精度金属掩模板的混合制作工艺 - Google Patents

一种高精度金属掩模板的混合制作工艺 Download PDF

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Publication number
WO2013166951A1
WO2013166951A1 PCT/CN2013/075226 CN2013075226W WO2013166951A1 WO 2013166951 A1 WO2013166951 A1 WO 2013166951A1 CN 2013075226 W CN2013075226 W CN 2013075226W WO 2013166951 A1 WO2013166951 A1 WO 2013166951A1
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Prior art keywords
core mold
electroforming
metal mask
etching
manufacturing
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PCT/CN2013/075226
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English (en)
French (fr)
Inventor
魏志凌
高小平
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昆山允升吉光电科技有限公司
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Priority to KR1020147031429A priority Critical patent/KR101911416B1/ko
Priority to JP2015510623A priority patent/JP5969114B2/ja
Publication of WO2013166951A1 publication Critical patent/WO2013166951A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41CPROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00Forme preparation
    • B41C1/14Forme preparation for stencil-printing or silk-screen printing
    • B41C1/142Forme preparation for stencil-printing or silk-screen printing using a galvanic or electroless metal deposition processing step
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41CPROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00Forme preparation
    • B41C1/14Forme preparation for stencil-printing or silk-screen printing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41CPROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00Forme preparation
    • B41C1/14Forme preparation for stencil-printing or silk-screen printing
    • B41C1/147Forme preparation for stencil-printing or silk-screen printing by imagewise deposition of a liquid, e.g. from an ink jet; Chemical perforation by the hardening or solubilizing of the ink impervious coating or sheet
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • C23F1/04Chemical milling
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the invention relates to the field of material preparation and processing, and relates to a manufacturing process of a mask for vapor deposition, in particular to a preparation process of a high-precision mask for vapor deposition of 0LED. Background technique
  • the organic electroluminescent display has a series of advantages such as autonomous illumination, low voltage direct current driving, full curing, wide viewing angle, and rich color.
  • the organic electroluminescent display does not require a backlight, has a large viewing angle, and has a power. Low, its response speed can reach 1000 times that of liquid crystal display, and its manufacturing cost is lower than that of liquid crystal display with the same resolution. Therefore, organic electroluminescent displays have broad application prospects and are regarded as one of the most competitive future flat panel display technologies.
  • Top-emitting organic display has many advantages such as all-solid-state, active illumination, high contrast, ultra-thin, low power consumption, no viewing angle limitation, fast response, shock resistance, wide working range, easy implementation of flexible display and 3D display. , gradually become the fastest growing new display technology in the next 20 years.
  • a conventional top-emitting OLED structure is composed of an anode (first electrode), a cathode (second electrode), and an organic light-emitting layer interposed between the anode and the cathode.
  • the luminescence mechanism and process of OLED are to inject electrons and holes from the cathodes and cathodes respectively. The injected electrons and holes are transported in the organic layer and recombine in the luminescent layer, thereby exciting the luminescent layer molecules to generate singlet excitons. Singlet exciton radiation decays and illuminates.
  • the anode of the existing bottom-emitting OLED device is mostly made of indium oxide-tin (ITO) as a raw material, and is coated by an RF sputtering method to form an electrode, and the film is a single-layer film structure.
  • the top-emitting OLED device is then coated with a reflective layer on the transparent anode ITO.
  • ITO indium oxide-tin
  • the use of RF sputtering to fabricate tantalum anodes is susceptible to poor process control factors resulting in surface irregularities that result in the formation of tipped materials or protrusions on the surface.
  • the high temperature calcination and recrystallization process also provides the opportunity for holes to be directly incident on the cathode, thereby increasing the leakage current and affecting the luminous efficiency of the OLED.
  • the electrode made of ITO has a large resistance, which tends to increase heat generation and power consumption. Summary of the invention
  • the present invention provides a high-precision metal mask mixing process, which is effective for solving the chemical etching method used in the conventional process, and has a mask which is difficult to demold and has poor precision. Wait question.
  • the present invention provides a method for preparing a metal mask, comprising the steps of: electroforming: providing a core mold, and pre-treating the core mold to provide a single-sided film, Exposing and developing the film surface of the core mold, then electrodepositing the core mold, and then post-processing to obtain an electroformed sheet having a core mold surface and a substrate surface; and etching step: the electroforming plate
  • the core mold surface and the substrate surface are respectively coated, and the core mold surface and the substrate surface of the film are exposed, and then the exposed substrate surface is developed and etched, and then sequentially washed, faded, and post-treated. After the process, the core mold face is peeled off to obtain a mask.
  • the step of electroforming comprises: a. degreasing, pickling, and sandblasting the core mold to remove oily impurities on the surface and smoothing the surface; b. Coating a surface of the mandrel; c, exposing the open area of the pattern to remove the dry film of the unexposed area by development, leaving the exposed portion as a protective film for the subsequent electroforming step; d, exposing the above The unexposed portion of step c is developed, leaving the exposed portion as a protective film for the subsequent electroforming step; e.
  • the core mold used in the above step e is any one of stainless steel 201, 202, 301, 304, 420JK or 420J2, and in the electroforming process, the core mold serves as a cathode substrate; Any one of an anode nickel block or an anode nickel plate is used.
  • the electroformed plate has a thickness of 10 to 50 ⁇ m
  • the prepared electroforming material is a magnetic nickel or nickel alloy material.
  • the nickel alloy material is one of a nickel-iron alloy, a nickel-cobalt alloy, and a nickel-iron-cobalt alloy.
  • the vertical cross-section of the electroformed opening in step e is tapered.
  • the size of the electroformed opening is 0.01 to 0.1 mm.
  • the size of the electroformed opening is 0.01 to 0.05 mm.
  • the step of etching specifically includes: a, applying a film to the core mold surface and the substrate surface of the electroformed board; b, placing the electroformed board outside the open area of the substrate surface The area and the core mold face are double-sided exposed, so that the dry film of the unexposed area is removed by development, leaving the exposed portion as a protective film for the subsequent etching step; c.
  • the unexposed portion of the substrate surface of the electroformed plate Developing, leaving the exposed portion as a protective film for the subsequent etching step; d, etching the exposed surface of the substrate surface of the electroformed plate by the prepared etching liquid; e, passing the exposed dry film which is not removed in the above development process The immersion brushing of the prepared fading liquid is removed; f. de-oiling, pickling, and air-drying the electroformed board; and g, peeling off the core mold surface to obtain a mask.
  • the etching depth in the step d is 50% to 100% of the thickness of the electroformed plate.
  • the etching depth in the step d is 100% of the thickness of the electroformed plate.
  • the edge of the groove etched in the above step d coincides with the edge of the opening of the vapor deposition surface.
  • the vertical section of the groove etched in the step d is a bowl shape.
  • the groove angle of the groove etched in the step d is 30° to 50°.
  • the method for manufacturing a metal mask further includes: a step of detecting, performing quality inspection on the mask under peeling; and an assembly step of passing the qualified mask through welding , the bonding, the screw lock is fixed on a mask frame to form a mask module; the step of detecting the finished product, performing quality inspection on the assembled mask component; and the step of packaging, passing the test
  • the mask board assembly is packaged in the outer casing, and the finished product is shipped.
  • the wall of the hole shields the vapor deposition material, which improves the vapor deposition rate, and the smooth electroformed hole wall is released from the etched hole wall, and does not affect the material on the vapor deposition.
  • Figure 1 is a cross-sectional view showing the opening of the electroforming process of the present invention.
  • Figure 2 shows an open cross-sectional view of a double sided etch process.
  • Fig. 3 is a cross-sectional view showing the opening of the present invention which is continuously etched on the basis of electroforming.
  • Figure 4 shows a perspective view of a high precision metal mask produced by the method of the present invention.
  • the embodiment of the invention provides a method for preparing a metal mask plate, and adopts a mixing process of electroforming and then etching to form a mask plate with an opening with a taper.
  • the mixing method comprises the following steps:
  • a step of electroforming providing a core mold, pre-treating the core mold, and applying a single-sided film to the core mold
  • the film surface is exposed and developed, and then the core mold is electrodeposited, and then the electroformed sheet having the core mold surface and the substrate surface is obtained after the film is removed and post-treated.
  • the step of electroforming carries out the pre-treatment of the stainless steel core mold 304 for degreasing, pickling and sand blasting, removing dirt and impurities on the surface thereof, and increasing the surface roughness thereof.
  • a stainless steel 304 core mold On a stainless steel 304 core mold, a single-sided photosensitive film or a photosensitive adhesive is applied, and a photosensitive film or a photosensitive adhesive to be formed into an opening pattern area is exposed by scanning exposure, as an electroforming protective film, an unexposed photosensitive film or a photosensitive adhesive is subsequently
  • the developing process is washed away with an alkali solution to expose the core mold and form a region of the metal material to be deposited in the subsequent electroforming.
  • the developed mandrel is placed in an electroforming tank, the electroforming parameters are adjusted, and the electroformed metal material is deposited into the dry film free zone. Specifically include:
  • the process of pre-treatment of the core mold the core mold is degreased, pickled, sandblasted to remove oily impurities on the surface, and the surface is smoothed; in more detail, the parameters of the pretreatment process:
  • the degreasing time is lmin
  • the pickling time is lmin
  • the blasting time is lmin blasting pressure is 2.0kg/cm 2 .
  • the process of the single-sided film is applied to a surface of the mandrel; in more detail, the parameters of the filming process are: a temperature of 1 10 ° C, a speed of 1.4 m/min, and a pressure of 0.6 MPa.
  • the process of single-sided development exposing the unexposed portion of the above step c to development, leaving the exposed portion as a protective film for the subsequent electroforming step; in more detail, the parameters of the single-sided development process are: 0.7 %Na2CO3 solution, activation parameters: activation time is 8 min, activation temperature is 25 °C, and activation solution concentration is 1 mol/L.
  • electroforming (electrodeposition) process immersing the core mold in a preliminary electroforming tank, depositing the prepared electroforming material into the dry film-free region, and obtaining a core mold having a substrate surface; in more detail,
  • the electroforming process parameters pH 3.4, temperature 35 ° C, current density 1.4 A / dm 2 .
  • the composition of the electroforming liquid 240 g/L of nickel sulfate, 35 g/L of nickel chloride and 40 g/L of ferrous sulfate.
  • the composition of the additive for the electroforming liquid 2 ml/L for the stabilizer, 3 ml/L for the wetting agent, and 3 ml/L for the spacer.
  • the above electroforming parameters are made of an electroformed substrate having a thickness of 50 ⁇ m, and have an opening pattern, a smooth open wall, and high dimensional accuracy.
  • the dimensional accuracy of the vapor-deposited opening of the electroforming is ⁇ 1 ⁇ , and the positional accuracy is ⁇ 5 ⁇ .
  • the smooth electroformed hole wall is easier to demold than the etched hole wall and does not affect the material that has been vaporized.
  • FIG. 1 there is shown an opening sectional view of the electroforming process of the present invention: wherein the electroforming thickness is t'z, the crucible is the opening dimension of the crucible, 1 is the vapor deposition surface, and 2 is the ITO surface (when electroforming) Close to the mandrel). Due to electricity Casting is an additive process, and is electrodeposited. The opening is formed by metal ions attached to the photosensitive film or the photosensitive gel. Therefore, the surface of the opening wall is smooth, and the opening size is high in precision, and the control can be arbitrarily added. The reduction and the etching process are different depending on the type of tile material.
  • the core mold (ie, the cathode substrate) used in the above step e may also be any one of stainless steel 201, 202, 301, 420JK or 420J2; the anode is made of an anode nickel block or an anode nickel. Any of the boards.
  • the electroformed plate has a thickness of 10 to 50 ⁇ m
  • the prepared electroforming material is a magnetic nickel or nickel alloy material.
  • the nickel alloy material is one of a nickel-iron alloy, a nickel-cobalt alloy, and a nickel-iron-cobalt alloy.
  • the vertical section of the electroformed opening formed in the above step e is tapered.
  • the size of the electroformed opening is 0.01 to 0.1 mm.
  • the size of the electroformed opening is 0.01 to 0.05 mm.
  • the core mold having the substrate surface is degreased, pickled, and air-dried to obtain an electroformed plate having a core surface and a substrate surface.
  • the core mold surface and the substrate surface of the electroformed sheet are respectively coated, and the core mold surface and the substrate surface of the film are exposed, and then the exposed substrate surface is developed and etched, and then sequentially After the steps of washing, fading, and post-treatment, the core mold faces are peeled off to obtain a mask.
  • the substrate obtained in the above electroforming step is coated on the double-sided photosensitive film or the photosensitive adhesive together with the core mold, and the photosensitive film or the photosensitive adhesive on one side of the core mold is completely exposed; the area to be etched on one side of the substrate Retention, exposure of other areas, exposure of the photosensitive film or photoresist as a protective film in the subsequent etching process, the protective substrate and the core mold are not corroded by the etching solution; the unexposed photosensitive film or the photosensitive paste is removed by the lye, so that The surface of the substrate to be etched is leaked out, etched by a corrosive liquid, and the depth to be etched is controlled by controlling the etching transfer speed or the concentration of the etchant.
  • a groove of a certain depth is etched, and the wall of the groove is in the shape of a bowl. Specifically include:
  • a double-sided exposure process exposing a region other than the open area of the electroformed plate substrate surface and the core mold surface to remove the dry film of the unexposed area by development, leaving the exposed portion for subsequent A protective film for the etching step.
  • One-sided development process developing the unexposed portion of the substrate surface of the electroformed plate, leaving the exposed portion as a protective film for the subsequent etching step.
  • d. Single-sided etching process, the surface exposed by the substrate surface of the electroformed plate is etched by the prepared etching liquid; specifically, the etching depth is 50% to 100% of the thickness of the electroformed plate. Preferably, the etching depth in the step d is 100% of the thickness of the electroformed plate.
  • the edge of the etched groove coincides with the edge of the opening of the vapor deposition surface.
  • the etched grooves have a vertical profile in the shape of a bowl.
  • the etched groove has a section angle e of 30° to 50°.
  • the specific composition of the etching liquid was as follows: ferric chloride was 200 g/L, hydrochloric acid was 2 g/L, and sodium hypochlorite was 0.2 g/L.
  • Etching process parameters specific gravity of 1.45, pH of 1.4, temperature of 55 ° C, pressure of 45 kg / cm 2 .
  • the above etching parameters were such that the groove depth was 40 ⁇ m, that is, the effective vapor deposition opening thickness was 10 ⁇ m.
  • the groove formed by the etching forms a bowl-shaped hole wall, and is combined with the electroformed opening to obtain an opening satisfying the evaporation requirement, and the bowl-shaped hole wall has a large taper, thereby avoiding the wall-to-vapor deposition during the evaporation process. The occlusion of the material increases the vapor deposition rate.
  • FIG. 2 an open cross-sectional view of a double-sided etching process is shown, in which a double-sided etching is used to form a gourd-like opening from the two sides of the tile material, but since the etching is a subtractive process, There is also a side corrosion effect, so that the opening size 11 of the surface of the sheet is larger than the predetermined size 12, the dimensional accuracy is not well controlled, the size is deviated, and the opening wall formed by etching is not rough.
  • T1 is the etching depth of the surface
  • t2 is the etching depth of the vapor deposition surface.
  • FIG. 3 there is shown an opening cross-sectional view of the present invention which is continuously etched on the basis of electroforming.
  • 1 is a vapor deposition surface
  • 2 is a tantalum surface
  • 3 is an etching groove
  • is a crucible.
  • the surface opening size is the effective evaporation opening width
  • t'2 is the depth of the etching groove
  • t'l is the thickness of the unetched process
  • t'l+t'2 t'z
  • is the etching groove Section angle.
  • T'2 (50% ⁇ 100%) t'z.
  • a perspective view of a high-precision metal mask obtained by the method of the present invention is shown. Among them, 1 is the vapor deposition surface, 3 is the etching recess, and 4 is the high tight metal mask.
  • the preparation process of the high-precision metal mask provided by the present invention of the present invention further includes:
  • the step of detecting, the quality of the mask plate after peeling is performed; the step of assembling, fixing the qualified mask plate to a mask frame by any one of welding, bonding, and screw locking to form a mask Modular parts.
  • the step of finished product inspection the assembled mask component is subjected to quality inspection.
  • the packaging step will test the qualified mask board assembly package and ship the finished product.
  • the metal mask is provided in the mixing process of the metal mask, the opening by the electroforming and etching process, the hole wall is smooth, the dimensional precision is high, and the dimensional accuracy of the vapor deposition surface is obtained by electroforming.
  • the positional accuracy is ⁇ 5 ⁇
  • the groove obtained by etching forms a bowl-shaped hole wall, which is combined with the electroformed opening to obtain an opening satisfying the evaporation requirement, and the bowl-shaped hole wall has a large taper.
  • the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

Abstract

一种高精度金属掩模板的制备工艺,包括:通过电铸镍合金,制作一定厚度的基板,基板上带有开口,即通孔,通过蚀刻工艺在掩膜基板的一面蚀刻一定深度凹槽,使蚀刻一面的开口尺寸大于未蚀刻面的开口尺寸,且孔壁呈圆角,形成锥度。应用电铸加蚀刻的混合工艺制备得到的金属掩模板,具有成本低、开孔质量优、开孔精度高的优点,并减少有效范本的厚度,提高了掩模板蒸镀过程中的蒸镀成膜率。

Description

一种高精度金属掩膜板的混合制作工艺 技术领域
本发明涉及材料制备及加工领域, 本发明是有关于一种蒸镀用掩膜板的制作工艺, 特别 指关于一种 0LED蒸镀用高精度掩膜板的制备工艺。 背景技术
当今, 随着多媒体技术的发展和信息社会的来临, 对平板显示器性能的要求越来越高。 近年来新出现了三种显示技术: 等离子显示器、 场发射显示器和有机电致发光显示器 (简称 OLED) , 均在一定程度上弥补了阴极射线管和液晶显示器的不足。 其中, 有机电致发光显 示器具有自主发光、 低电压直流驱动、 全固化、 视角宽、 颜色丰富等一系列的优点, 与液晶 显示器相比, 有机电致发光显示器不需要背光源, 视角大, 功率低, 其响应速度可达到液晶 显示器的 1000 倍, 其制造成本却低于同等分辨率的液晶显示器。 因此, 有机电致发光显示 器具有广阔的应用前景, 被看作极赋竞争力的未来平板显示技术之一。
顶部发光有机显示器 (OLED ) 因其具有全固态、 主动发光、 高对比度、 超薄、 低功 耗、 无视角限制、 响应速度快、 抗震、 工作范围宽、 易于实现柔性显示和 3D显示等诸多优 点, 逐渐成为未来 20年成长最快的新型显示技术。
常规的顶部发光 OLED结构与其他 OLED结构一样, 由阳极 (第一电极) 、 阴极 (第 二电极) 以及介于阳极和阴极之间的有机发光层构成。 OLED 的发光机理和过程是从阴、 阳 两极分别注入电子和空穴, 被注入的电子和空穴在有机层内传输, 并在发光层内复合, 从而 激发发光层分子产生单态激子, 单态激子辐射衰减而发光。 目前, 现有的底部发光 OLED 器件的阳极大多以氧化铟-锡 (ITO) 作为原材料, 用射频溅镀法镀膜以形成电极, 薄膜为单 层膜结构。 顶部发光 OLED器件则在透明阳极 ITO上再镀一层反射层。 但一般而言, 利用 射频溅镀法制造 ΠΌ 阳极, 易受工艺控制因素不良的影响而导致其表面不平整, 进而导致 其表面产生尖端物质或突起物。 另外, 高温煅烧及再结晶的过程亦会提供空穴直接射向阴极 的机会, 从而使漏电流增加, 影响 OLED 的发光效率。 另外, 用 ITO 制作的电极电阻较 大, 易增加产热和功耗。 发明内容
为实现上述目的及其他相关目的, 本发明提供一种高精度金属掩膜板的混合制作工艺, 用以有效解决传统工艺采用的化学蚀刻的方法制备得到的掩膜板存在难脱模、 精度差等问 题。
为达到上述目的及其他目的, 本发明提供一种金属掩膜板的混合制作方法, 包括以下步 骤: 电铸的步骤, 提供一芯模, 对所述芯模预处理后予以单面贴膜, 对所述芯模的贴膜面进 行曝光及显影作业, 然后电沉积所述芯模, 再经后处理后获得具有芯模面和基板面的电铸 板; 以及蚀刻的步骤: 对所述电铸板的芯模面和基板面分别予以贴膜, 对贴膜的芯模面和基 板面进行曝光作业, 然后对曝光后的基板面进行显影和蚀刻作业, 再依序经水洗、 褪膜、 和 后处理的工序后将所述芯模面剥离掉以获得掩膜板。
在本发明的一实施例中, 上述的电铸的步骤具体包括: a、 将所述芯模予以除油、 酸 洗、 喷砂, 以去除表面的油渍杂质, 并将表面打磨光滑; b、 于所述芯模的一表面进行贴 膜; c、 使图形开口区域曝光, 以便将未曝光区域干膜通过显影去除, 留下曝光的部分以作 后续电铸步骤的保护膜; d、 将曝光上述步骤 c 中未曝光部分进行显影, 留下曝光的部分以 作后续电铸步骤的保护膜; e、 将所述芯模浸入一预备的电铸槽中, 将预备的电铸材料沉积 到无干膜区域, 获得具有基板面的芯模; 以及 f、 将具有基板面的芯模除油、 酸洗、 风干, 以获得具有芯模面和基板面的电铸板。
在本发明的一实施例中, 上述的步骤 e 中使用的芯模为不锈钢 201、 202、 301、 304、 420JK 或 420J2 中的任意一种, 在电铸过程中, 芯模作为阴极基板; 阳极采用阳极镍块、 或阳极镍板中的任意一种。
在本发明的一实施例中, 上述的电铸板厚度为 10〜50μηι, 预备的电铸材料为磁性镍或 镍合金材料。 具体地, 所述镍合金材料为镍铁合金、 镍钴合金、 及镍铁钴合金中的一种。
在本发明的一实施例中, 上述的步骤 e中电铸形成开口的竖直剖面呈锥形。 所述电铸形 成开口的尺寸为 0.01〜0.1mm。 优选地, 所述电铸形成开口的尺寸为 0.01〜0.05mm。
在本发明的一实施例中, 上述的蚀刻的步骤具体包括: a、 对所述电铸板的芯模面和基 板面分别予以贴膜; b、 将所述电铸板基板面开口区域以外的区域及芯模面进行双面曝光, 以便将未曝光区域的干膜通过显影去除, 留下曝光的部分以作后续蚀刻步骤的保护膜; c、 将所述电铸板之基板面未曝光部分显影, 留下曝光的部分以作后续蚀刻步骤的保护膜; d、 通过预备的蚀刻液对电铸板之基板面暴露的表面进行腐蚀; e、 将上述显影工序中未清除的 曝光干膜通过预备的褪膜液的浸泡刷洗褪除; f、 将所述电铸板除油、 酸洗、 风干; 以及 g、 将所述芯模面剥离掉以获得掩膜板。
在本发明的一实施例中, 上述的步骤 d 中蚀刻深度为电铸板厚度的 50%〜100%。 优选 地, 所述步骤 d中蚀刻深度为电铸板厚度的 100%。 在本发明的一实施例中, 上述的步骤 d中蚀刻的凹槽边缘与蒸镀面开口边缘重合。 所述 步骤 d中蚀刻的凹槽竖直剖面呈碗型。 所述步骤 d中蚀刻的凹槽的剖面角度为 30°〜50°。
在本发明的一实施例中, 上述的金属掩膜板的混合制作方法还包括: 检测的步骤, 将剥 离下的掩膜板进行质量检测; 组装的步骤, 将检测合格的掩膜板通过焊接、 黏合、 螺锁中的 任意一种方式固定在一掩膜板框架上, 形成掩模块件; 成品检测的步骤, 将组装好的掩模组 件进行质量检测; 以及包装的步骤, 将检测合格的掩膜板组件包装外壳, 成品出货。
基于上述, 本发明提供之金属掩膜板的混合制作工艺, 先电铸再蚀刻的混合工艺制得的 开口, 孔壁光滑, 尺寸精度高, 电铸制得的蒸镀面开口尺寸精度达到 ±1μηι, 位置精度达到 ±5μηι, 蚀刻制得的凹槽形成碗状孔壁, 与电铸制得的开口结合, 制得满足蒸镀要求的开 口, 碗状孔壁具有的大锥度, 避免了蒸镀过程中孔壁对蒸镀材料的遮挡, 提高了蒸镀成膜 率, 而光滑的电铸孔壁较蚀刻孔壁更衣脱模, 不会对已蒸镀上的材料造成影响。 附图说明
图 1显示为本发明电铸工艺制作的开口剖面图。
图 2显示为采用双面蚀刻工艺制作的开口剖面图。
图 3显示为本发明在电铸的基础上继续蚀刻制作的开口剖面图。
图 4显示为本发明的方法制得的为高精度金属掩膜板的立体图。
具体实施方式
以下由特定的具体实施例说明本发明的实施方式, 熟悉此技术的人士可由本说明书所揭 露的内容轻易地了解本发明的其他优点及功效。
请参阅图 1至图 4。 须知, 本说明书所附图式所绘示的结构、 比例、 大小等, 均仅用以 配合说明书所揭示的内容, 以供熟悉此技术的人士了解与阅读, 并非用以限定本发明可实施 的限定条件, 故不具技术上的实质意义, 任何结构的修饰、 比例关系的改变或大小的调整, 在不影响本发明所能产生的功效及所能达成的目的下, 均应仍落在本发明所揭示的技术内容 得能涵盖的范围内。 同时, 本说明书中所引用的如"上"、 "下"、 "左"、 "右"、 "中间 "及"一" 等的用语, 亦仅为便于叙述的明了, 而非用以限定本发明可实施的范围, 其相对关系的改变 或调整, 在无实质变更技术内容下, 当亦视为本发明可实施的范畴。
本发明实施例提供了一种金属掩膜板的混合制作方法, 采用先电铸再蚀刻的混合 工艺制作出开口带有锥度的掩膜板, 所述混合制作方法, 包括以下步骤:
电铸的步骤, 提供一芯模, 对所述芯模预处理后予以单面贴膜, 对所述芯模的贴 膜面进行曝光及显影作业, 然后电沉积所述芯模, 再经褪膜及后处理后获得具有芯模 面和基板面的电铸板。
于本实施例中, 电铸的步骤将不锈钢芯模 304 进行除油、 酸洗和喷砂的前期处 理, 除去其表面的污垢及杂质, 增加其表面粗糙度。 在不锈钢 304芯模上单面贴感光 膜或涂覆感光胶, 通过扫描曝光将所要形成开口图形区域的感光膜或感光胶曝光, 作 为电铸保护膜, 未曝光的感光膜或感光胶在后续显影工序中通过碱液洗去, 将芯模暴 露并形成后续电铸所要沉积金属材料区域。 将显影后的芯模放入电铸槽中, 调整电铸 参数, 将电铸金属材料沉积到无干膜区域。 具体包括:
a、 芯模前处理的工艺, 将所述芯模予以除油、 酸洗、 喷砂, 以去除表面的油渍 杂质, 并将表面打磨光滑; 更为详细地, 所述前处理工艺之参数: 除油时间为 lmin, 酸洗时间为 lmin, 喷砂时间为 lmin喷砂压力为 2.0kg/cm2
b、 单面贴膜的工艺, 于所述芯模的一表面进行贴膜; 更为详细地, 所述贴膜工 艺之参数: 温度为 1 10 °C, 速度为 1.4m/min, 压力为 0.6MPa。
c、 单面曝光的工艺, 使图形开口区域曝光, 以便将未曝光区域干膜通过显影去 除, 留下曝光的部分以作后续电铸步骤的保护膜; 更为详细地, 所述曝光工艺之参 数: 能量为 300mj, 功率为 8w。
d、 单面显影的工艺, 将曝光上述步骤 c 中未曝光部分进行显影, 留下曝光的部 分以作后续电铸步骤的保护膜; 更为详细地, 所述单面显影工艺的参数: 0.7%Na2CO3 溶液, 活化参数: 活化时间为 8min, 活化温度为 25 °C, 活化液浓度为 为 lmol/L。
e、 电铸 (电沉积) 的工艺, 将所述芯模浸入一预备的电铸槽中, 将预备的电铸 材料沉积到无干膜区域, 获得具有基板面的芯模; 更为详细地, 所述电铸工艺参数: pH 值为 3.4, 温度为 35 °C, 电流密度为 1.4A/dm2。 电铸液的组成: 硫酸镍为 240g/L, 氯化镍为 35g/L, 硫酸亚铁为 40g/L。 电铸液的添加剂的组成: 稳定剂为 2ml/L, 润湿剂为 3ml/L, 走位剂为 3ml/L。
上述电铸参数制得厚度为 50μηι 的电铸基板, 且具有开口图案, 开口孔壁光滑, 尺寸精度高, 电铸制得的蒸镀面开口尺寸精度达到 ±1 μηι, 位置精度达到 ±5μηι。 光滑 的电铸孔壁较蚀刻孔壁更易脱模, 不会对已蒸镀上的材料造成影响。
请参阅第 1 图, 显示为本发明电铸工艺制作的开口剖面图: 其中, 电铸厚度为 t'z, Π为 ΠΌ面开口尺寸, 1为蒸镀面, 2为 ITO面 (电铸时与芯模紧贴) 。 由于电 铸为加成工艺, 且为电沉积, 开口为金属离子附着于感光膜或感光胶克隆形成, 故开 口壁表面光滑, 且开口尺寸精度高, Π 好控制, t'z 也可根据需要任意加减, 与蚀刻 工艺受因瓦片材型号限制不同。
在本发明的具体操作实施中, 上述的步骤 e中使用的芯模 (即阴极基板) 还可以 为不锈钢 201、 202、 301、 420JK 或 420J2中的任意一种; 阳极采用阳极镍块或阳极 镍板中的任意一种。
在本发明的具体操作实施中, 上述的电铸板厚度为 10〜50μηι, 预备的电铸材料 为磁性镍或镍合金材料。 具体地, 所述镍合金材料为镍铁合金、 镍钴合金、 及镍铁钴 合金中的一种。
在本发明的具体操作实施中, 上述的步骤 e中电铸形成开口的竖直剖面呈锥形。 所述电铸形成开口的尺寸为 0.01〜0.1mm。 优选地, 所述电铸形成开口的尺寸为 0.01〜0.05mm。
f、 基板后处理的工艺, 将具有基板面的芯模除油、 酸洗、 风干, 以获得具有芯 模面和基板面的电铸板。
蚀刻的步骤, 对所述电铸板的芯模面和基板面分别予以贴膜, 对贴膜的芯模面和 基板面进行曝光作业, 然后对曝光后的基板面进行显影和蚀刻作业, 再依序经水洗、 褪膜、 和后处理的工序后将所述芯模面剥离掉以获得掩膜板。
于本实施例中, 将上述电铸步骤中所得基板连同芯模一起, 双面贴感光膜或涂覆 感光胶, 将芯模一面的感光膜或感光胶完全曝光; 基板一面将所要蚀刻的区域保留, 其他区域曝光, 曝光的感光膜或感光胶在后续的蚀刻工艺中作为保护膜, 保护基板及 芯模不受到蚀刻液的腐蚀; 将未曝光的感光膜或感光胶通过碱液清除, 使将要蚀刻的 基板表面暴漏出来, 通过腐蚀性液体进行腐蚀, 通过控制蚀刻传送速度或蚀刻液浓度 来实现所要蚀刻的深度。 在原有电铸形成的开口基础上, 蚀刻一定深度的凹槽, 凹槽 壁呈碗状。 具体包括:
a、 双面贴膜的工艺, 对所述电铸板的芯模面和基板面分别予以贴膜。
b、 双面曝光的工艺, 将所述电铸板基板面开口区域以外的区域及芯模面进行双面 曝光, 以便将未曝光区域的干膜通过显影去除, 留下曝光的部分以作后续蚀刻步骤的 保护膜。
c、 单面显影的工艺, 将所述电铸板之基板面未曝光部分显影, 留下曝光的部分 以作后续蚀刻步骤的保护膜。 d、 单面蚀刻的工艺, 通过预备的蚀刻液对电铸板之基板面暴露的表面进行腐 蚀; 具体地, 蚀刻深度为电铸板厚度的 50%〜100%。 优选地, 所述步骤 d 中蚀刻深 度为电铸板厚度的 100%。 蚀刻的凹槽边缘与蒸镀面开口边缘重合。 蚀刻的凹槽竖直 剖面呈碗型。 蚀刻的凹槽的剖面角度 e 为 30°〜50°。
所述蚀刻液具体成分如下: 三氯化铁为 200g/L, 盐酸为 2g/L, 次氯酸钠为 0.2 g/L。
蚀刻工艺参数: 比重为 1.45, pH值为 1.4, 温度为 55 °C, 压力为 45kg/cm2。 上述蚀刻参数制得凹槽深度为 40μηι, 即有效蒸镀开口厚度为 10μηι。 蚀刻制得 的凹槽形成碗状孔壁, 与电铸制得的开口结合, 制得满足蒸镀要求的开口, 碗状孔壁 具有的大锥度, 避免了蒸镀过程中孔壁对蒸镀材料的遮挡, 提高了蒸镀成膜率。
请参阅第 2图, 显示为采用双面蚀刻工艺制作的开口剖面图, 其中, 采用双面蚀 刻分别从因瓦片材两面腐蚀, 形成的剖面为葫芦状开口, 但由于蚀刻为减成工艺, 且 存在侧腐蚀作用, 使得片材表面的开口尺寸 11 大于预定尺寸 12, 尺寸精度不好控 制, 尺寸存在偏差, 且蚀刻形成的开口壁粗糙不光滑。 tl 为 ΠΌ 面蚀刻深度, t2 为 蒸镀面蚀刻深度。
再请参阅第 3图, 显示为本发明在电铸的基础上继续蚀刻制作的开口剖面图, 如 图所示, 1为蒸镀面, 2为 ΠΌ面, 3为蚀刻凹槽, Π为 ΠΌ面开口尺寸, 即为有效 蒸镀开口宽度, t'2 为蚀刻凹槽的深度, t'l 为未蚀刻处理的厚度, t'l+t'2=t'z, α 为蚀 刻凹槽的剖面角度。 t'2= ( 50%〜100% ) t'z。
e、 水洗及褪膜的工艺, 将上述显影工序中未清除的曝光干膜通过预备的褪膜液 的浸泡刷洗褪除。
f、 后处理的工艺, 将所述电铸板除油、 酸洗、 风干;
g、 剥离的工艺, 将所述芯模面剥离掉以获得掩膜板。 呈如第 4 图所示, 显示为 本发明的方法制得的为高精度金属掩膜板的立体图。 其中, 1 为蒸镀面, 3 为蚀刻凹 槽, 4为高紧密金属掩膜板。
于本实施例中, 在本发明的本发明提供一种高精度金属掩膜板的制备工艺还包 括:
检测的步骤, 将剥离下的掩膜板进行质量检测; 组装的步骤, 将检测合格的掩膜 板通过焊接、 黏合、 螺锁中的任意一种方式固定在一掩膜板框架上, 形成掩模块件。
成品检测的步骤, 将组装好的掩模组件进行质量检测。 包装的步骤, 将检测合格的掩膜板组件包装外壳, 成品出货。
综上所述, 本发明提供之金属掩膜板的混合制作工艺, 先电铸再蚀刻的混合工艺 制得的开口, 孔壁光滑, 尺寸精度高, 电铸制得的蒸镀面开口尺寸精度达到 ±1 μηι, 位置精度达到 ±5μηι, 蚀刻制得的凹槽形成碗状孔壁, 与电铸制得的开口结合, 制得 满足蒸镀要求的开口, 碗状孔壁具有的大锥度, 避免了蒸镀过程中孔壁对蒸镀材料的 遮挡, 提高了蒸镀成膜率, 而光滑的电铸孔壁较蚀刻孔壁更衣脱模, 不会对已蒸镀上 的材料造成影响。 所以, 本发明有效克服了习知技术中的种种缺点而具高度产业利用 价值。
上述实施例仅例示性说明本发明的原理及其功效, 而非用于限制本发明。 任何熟悉此技 术的人士皆可在不违背本发明的精神及范畴下, 对上述实施例进行修饰或改变。 因此, 举凡 所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等 效修饰或改变, 仍应由本发明的权利要求所涵盖。

Claims

权利要求书
1. 一种金属掩膜板的混合制作方法, 其特征在于, 所述混合制作方法包括以下步骤:
电铸的步骤, 提供一芯模, 对所述芯模预处理后予以单面贴膜, 对所述芯模的贴膜 面进行曝光及显影作业, 然后电沉积所述芯模, 再经后处理后获得具有芯模面和基板面 的电铸板; 以及
蚀刻的步骤, 对所述电铸板的芯模面和基板面分别予以贴膜, 对贴膜的芯模面和基 板面进行曝光作业, 然后对曝光后的基板面进行显影和蚀刻作业, 再依序经水洗、 褪 膜、 和后处理的工序后将所述芯模面剥离掉以获得掩膜板。
2. 根据权利要求 1 所述的金属掩膜板的混合制作方法, 其特征在于, 所述电铸的步骤具体 包括:
a、 将所述芯模予以除油、 酸洗、 喷砂, 以去除表面的油渍杂质, 并将表面打磨光 滑;
b、 于所述芯模的一表面进行贴膜;
c、 使图形开口区域曝光, 以便将未曝光区域干膜通过显影去除, 留下曝光的部分以 作后续电铸步骤的保护膜;
d、 将曝光上述步骤 c 中未曝光部分进行显影, 留下曝光的部分以作后续电铸步骤的 保护膜;
e、 将所述芯模浸入一预备的电铸槽中, 将预备的电铸材料沉积到无干膜区域, 获得 具有基板面的芯模;
f、 将具有基板面的芯模除油、 酸洗、 风干, 以获得具有芯模面和基板面的电铸板。
3. 根据权利要求 2所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 e 中使用的 芯模为不锈钢 201、 202、 301、 304、 420J1、 或 420J2 中的任意一种; 阳极采用阳极镍 块、 或阳极镍板中的任意一种。
4. 根据权利要求 2 所述的金属掩膜板的混合制作方法, 其特征在于, 所述电铸板厚度为 10〜50μηι, 预备的电铸材料为磁性镍或镍合金材料。
5. 根据权利要求 4 所述的金属掩膜板的混合制作方法, 其特征在于, 所述镍合金材料为镍 铁合金、 镍钴合金、 及镍铁钴合金中的一种。
6. 根据权利要求 2所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 e 中电铸形 成开口的竖直剖面呈锥形。
7. 根据权利要求 2 所述的金属掩膜板的混合制作方法, 其特征在于, 所述电铸形成开口的 尺寸为 0.01〜0.1mm。
8. 根据权利要求 7 所述的金属掩膜板的混合制作方法, 其特征在于, 所述电铸形成开口的 尺寸为 0.01〜0.05mm。
9. 根据权利要求 1 所述的金属掩膜板的混合制作方法, 其特征在于, 所述蚀刻的步骤具体 包括:
a、 对所述电铸板的芯模面和基板面分别予以贴膜;
b、 将所述电铸板基板面开口区域以外的区域及芯模面进行双面曝光, 以便将未曝光 区域的干膜通过显影去除, 留下曝光的部分以作后续蚀刻步骤的保护膜;
c、 将所述电铸板之基板面未曝光部分显影, 留下曝光的部分以作后续蚀刻步骤的保 护膜;
d、 通过预备的蚀刻液对电铸板之基板面暴露的表面进行腐蚀;
e、 将上述显影工序中未清除的曝光干膜通过预备的褪膜液的浸泡刷洗褪除; f、 将所述电铸板除油、 酸洗、 风干; 以及
g、 将所述芯模面剥离掉以获得掩膜板。
10. 根据权利要求 9所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 d中蚀刻深 度为电铸板厚度的 50%〜100%。
11. 根据权利要求 10所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 d 中蚀刻 深度为电铸板厚度的 100%。
12. 根据权利要求 9所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 d中蚀刻的 凹槽边缘与蒸镀面开口边缘重合。
13. 根据权利要求 9所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 d中蚀刻的 凹槽竖直剖面呈碗型。
14. 根据权利要求 9所述的金属掩膜板的混合制作方法, 其特征在于, 所述步骤 d中蚀刻的 凹槽的剖面角度为 30°〜50°。
15. 根据权利要求 1、 2、 9所述的金属掩膜板的混合制作方法, 其特征在于, 还包括: 检测的步骤, 将剥离下的掩膜板进行质量检测;
组装的步骤, 将检测合格的掩膜板通过焊接、 黏合、 螺锁中的任意一种方式固定在 一掩膜板框架上, 形成掩模块件;
成品检测的步骤, 将组装好的掩模组件进行质量检测; 以及
包装的步骤, 将检测合格的掩膜板组件包装外壳, 成品出货。
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CN110484864A (zh) * 2019-09-29 2019-11-22 京东方科技集团股份有限公司 子掩膜版以及掩膜版
CN116511842A (zh) * 2023-04-27 2023-08-01 寰采星科技(宁波)有限公司 一种精密金属掩模板的制作方法及精密金属掩模板
CN116511842B (zh) * 2023-04-27 2023-10-03 寰采星科技(宁波)有限公司 一种精密金属掩模板的制作方法及精密金属掩模板

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