WO2013162466A1 - A cell arrangement - Google Patents
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- WO2013162466A1 WO2013162466A1 PCT/SG2013/000075 SG2013000075W WO2013162466A1 WO 2013162466 A1 WO2013162466 A1 WO 2013162466A1 SG 2013000075 W SG2013000075 W SG 2013000075W WO 2013162466 A1 WO2013162466 A1 WO 2013162466A1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 90
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 40
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910000807 Ga alloy Inorganic materials 0.000 claims abstract description 34
- 229910000967 As alloy Inorganic materials 0.000 claims abstract description 33
- 229910001199 N alloy Inorganic materials 0.000 claims abstract description 33
- 229910001245 Sb alloy Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 36
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 238000003795 desorption Methods 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 230000007547 defect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 229910052787 antimony Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010348 incorporation Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 206010003549 asthenia Diseases 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- III-V multi-junction (MJ) photovoltaic (PV) cells have a niche application as the best technology available today for on-grid megawatt capacity photovoltaic power plants (from 0.1 MW to over 100 - W) due to the high solar conversion efficiency arising from the direct bandgap property of these materials.
- the state-of-the-art production-scale MJ III-V PV cell has recorded solar conversion efficiency of up to 44% under concentrated solar radiation. This solar conversion efficiency value is the highest amongst other competing solar cell technologies by a considerable margin. Under lOOOx solar concentration (1000 sun), a 1cm 2 III-V MJ solar cell with 44% cell efficiency produces as much power as fourteen (14) 5 "-diameter silicon solar cells.
- III-V concentrated photovoltaic (CPV) technology has made III-V concentrated photovoltaic (CPV) technology more viable than ever for on-grid megawatt capacity power generation.
- Major CPV players have large installed manufacturing capacity and ability to scale with volume at rate of at least 600 MW/year.
- FIG. 1A shows the solar spectrum and photon absorption characteristics by different sub cells of GalnP, GaAs and Ge in a conventional multi-junction PV cell.
- FIG. IB shows a schematic of how the conventional multi-junction PV cell consisting GalnP, GaAs and Ge sub cells absorbs solar energy.
- the sub-cells made of direct bandgap semiconductors GalnP and GaAs are tuned to absorb the solar energy windows more than about 1.9eV and from about 1.4 to about 1.9eV, respectively.
- the bottom sub-cell made of germanium (Ge) is tuned to absorb photons with energy between about 0.7eV to about 1.4eV.
- the solid line in FIG. 1 A represents the power density of solar spectrum at different wavelengths.
- the filled region under the solid line represents the power density converted by the multi-junction PV cell to electrical power. It can be seen that the conversion efficiency of multi-junction PV cell is poor at energy region of 1 eV. Photons passing through the GaAs layer have less than 1.42eV. Some of these photons possess excess energies beyond the Ge bandgap (0.67eV). These excess energies are lost in the form of heat during the energy conversion process.
- a cell arrangement including a plurality of solar sub cells stacked above one another, wherein at least one solar sub cell of the plurality of solar sub cells includes an alloy of gallium, nitrogen, arsenic and antimony.
- a method of forming a solar cell including stacking a plurality of solar sub cells above one another, wherein at least one solar sub cell of the plurality of solar sub cells includes an alloy of gallium, nitrogen, arsenic and antimony.
- FIG. 1A shows the solar spectrum and photon absorption characteristics by different sub cells of GalnP, GaAs and Ge in a conventional multi-junction PV cell.
- FIG. IB shows a schematic of how the conventional multi-junction PV cell including or consisting GalnP, GaAs and Ge sub cells absorbs solar energy.
- FIG. 2 shows a schematic of a solar cell including a (Si)Ge based sub cell (any one of Ge or SiGe) on a substrate, a GaNAsSb based sub cell on the (Si)Ge based sub cell, a Ga(In)As based sub cell (any one of GaAs or GalnAs) on the GaNAsSb based sub cell and a (Al)GalnP based sub cell (any one of GalnP or AlGalnP) on the Ga(In)As based sub cell according to various embodiments.
- FIG. 3 shows a schematic of a solar cell including a GaNAsSb based sub cell on a substrate, a Ga(In)As based sub cell (any one of GaAs or GalnAs) on the GaNAsSb based sub cell and an (Al)GalnP based sub cell (any one of GalnP or AlGalnP) on the Ga(In)As based sub cell according to various embodiments.
- FIG. 4 shows a schematic of a GaNAsSb based sub cell according to various embodiments.
- FIG. 5 shows a graph illustrating the photo-current of the GaNAsSb sub cell in FIG: 4 measured under one sun AMI .5G spectral condition.
- FIG. 6 shows a graph plotting the open circuit voltage Voc of the
- GaNAsSb sub cell according to various embodiments in FIG. 4 against solar concentration.
- FIG. 7 is a graph plotting the current density against the open circuit voltage Voc of a conventional GalnP/GaAs dual junction solar cell and the GalnP/GaAs/GaNAsSb triple junction solar cell according to various embodiments in FIG. 3.
- FIG. 8 is a graph plotting the open circuit voltage Voc against solar concentration of the GalnP/GaAs/GaNAsSb triple junction solar cell according to various embodiments in FIG. 3.
- a cell arrangement including a plurality of solar sub cells stacked above one another, wherein at least one solar sub cell of the plurality of solar sub cells comprises an alloy of gallium (Ga), nitrogen (N), arsenic (As) and antimony (Sb).
- the cell arrangement is a solar cell arrangement.
- the solar cell arrangement may be a multi-junction photovoltaic cell having more than one sub cell stacked on top one another.
- the alloy of gallium, nitrogen, arsenic and antimony may offer flexibility for independent tuning of the conduction band offset by varying the nitrogen content, while the valence band offset can be tuned by varying the antimony content. This provides the ability to engineer the bandgap of GaNAsSb alloy.
- a solar cell having a GaNAsSb alloy based sub cell may be tuned to absorb photons having a particular range of energies, especially photons having the energies ranging between about 0.6 eV to about 1.4 eV or from about 0.9 eV to about 1.1 eV, therefore helping to address some of the abovementioned challenges.
- a GaNAsSb based sub cell has advantages compared to other nitride based sub cells such as GalnNAs or GalnAs or GalnNAsSb.
- the amount of nitrogen-related defects in GaNAsSb may be lower due to the presence of antimony (Sb) atoms and the absence of indium (In) atoms during preparation.
- Antimony acts as a surfactant that improves incorporation efficiency of substitutional nitrogen (N) atoms and suppresses the formation of nitrogen-related defects.
- the incorporation of indium dilute nitride growth may lower the efficiency of nitrogen atom incorporation and promote the formation of nitrogen-related defects.
- the material system of GaNAsSb alloy may also require fewer nitrogen atoms to achieve the desired bandgap compared to materials such as GalnNAs, thereby reducing the number of nitrogen related defects.
- the improved substitutional incorporation properties may help to reduce the defect density in the GaNAsSb material. Any inefficiency in substitutional incorporation in the material may promote the formation of nitrogen-related defects, which may be detrimental to carrier lifetime and solar cell performance in general.
- the alloy may have a formula GaN x Asi -x - y Sb y .
- the cell arrangement is on a substrate.
- the substrate may include a semiconductor material such as gallium arsenide, silicon, germanium, silicon germanium, graded silicon germanium.
- the substrate may be a rigid substrate. In other alternative embodiments, the substrate may be a flexible substrate.
- the cell arrangement may further include the substrate which is one of the plurality of solar sub cells. [0028] In various embodiments, at least one of the solar sub cells may include a plurality of layers.
- the plurality of sub cells may be separated from one another by a tunnel junction layer.
- the tunnel junction may provide a low electrical resistance and optically low loss connection between two sub cells.
- the plurality of sub cells may be separated from one another by an intermediate layer.
- each sub-cell may include a plurality of layers.
- the atoms of the element or elements in each layer form a lattice.
- the atomic spacing of the lattice in each layer is such that it matches to the lattice in a neighbouring layer such that both lattices in the two layers are not substantially strained.
- the layers in a solar sub cells forms a substantially unstrained lattice and the layers between different sub-cells and the substrate also forms a substantially unstained lattice.
- the number of defects such as cracks in the lattice is thus minimized. In other words, by doing so, generation of defects due to lattice mismatch which in turn may degrade the performance of the solar cells, may be reduced.
- a solar sub cell nearer to the substrate is configured to absorb photons having a lower energy for converting into electrical energy than a solar sub cell further from the substrate.
- the top sub cell may have the largest bandgap to ensure that only the most energetic photons are absorbed in this layer. Less energetic photons pass through the top sub cell since they are not energetic enough to generate electron-hole pairs in the material.
- Each sub cell going from the top to the bottom may have a smaller bandgap than the respectively above sub cell.
- Photons absorbed by a particular sub cell may have energies greater than the bandgap of the particular sub cell but have energies less than the bandgap of the sub cell above the particular sub cell.
- At least one sub cell in the cell arrangement may include an alloy of gallium, nitrogen, arsenic and antimony.
- At least one solar sub cell in the cell arrangement may have a layer including of an alloy of gallium, nitrogen, arsenic and antimony.
- the first adjacent solar sub cell may have a corresponding layer having a bandgap larger than the bandgap of the alloy of GaNAsSb.
- the second adjacent sub cell may have a corresponding layer having a bandgap smaller than the bandgap of GaNAsSb.
- a first solar sub cell adjacent to a second solar sub cell refers to the first solar sub cell immediately next to the second solar sub cell or that the first solar sub cell is separated from the second solar sub cell by a tunnel junction layer or intermediate layer. In other words, no other solar sub cell is between the first solar sub cell and the second solar sub cells.
- the GaNAsSb-based sub cell may have an energy bandgap between that of the first adjacent sub cell and the second adjacent sub cell, it may be able to absorb some of these photons with energies higher than the bandgap of GaNAsSb, hence reducing some of the excess energies lost as heat.
- the efficiency of the solar cell may be improved.
- the difference between the absorbed photon energies for some of the photons is reduced, which in turns reduces the excess energy lost as heat.
- a cell arrangement with a solar sub cell further from the substrate configured to absorb photons having a lower energy for converting into electrical energy than a solar sub cell nearer from the substrate may also be envisioned.
- the substrate may be optically transparent and may have an energy band gap wider than the sub cells. Photons passing through the substrates would mostly not be absorbed by the substrate, except for the most energetic ones.
- Photons passing though the sub cell adjacent to the substrate and having energies more than the energy band gap of the sub cell will be absorbed by the sub cell.
- Each sub cell going from the bottom (nearest to the substrate) to the top (furthest from the substrate) may have a smaller bandgap than the below sub cell.
- a first solar sub cell is arranged at the top surface of the cell arrangement, and the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony is arranged below the first solar sub cell so that light is received by the first solar sub cell and a portion of the light passing through the first solar sub cell is received by the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony.
- the first solar sub cell may include (Al)GalnP.
- the first solar sub cell may include any one of aluminum gallium indium phosphide (AlGalnP) or gallium indium phosphide (GalnP).
- one or more or solar sub cells may be arranged between the first solar sub cell and the solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony.
- the portion of the light passing through the first solar sub cell and received by the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony may have an energy less than the energy bandgap of the first solar sub cell but equal or more than the energy bandgap of the at least one sub cell comprising the alloy of gallium, nitrogen, arsenic and antimony.
- a second solar sub cell may be arranged at the bottom of the cell arrangement; and wherein the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony is arranged above the second solar sub cell so that light is received by the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony and a portion of the light passing through the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony is received by the second solar sub cell.
- one or more solar cells may be arranged between the solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony and the second solar sub cell.
- the portion of the light passing through the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony and received by the second solar sub cell may have energy less than the energy band gap of the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony but equal or more then the energy bandgap of the second solar sub cell.
- the cell arrangement may further include a solar sub cell including gallium arsenide adjacent to the at least one solar sub cell comprising the alloy of gallium, nitrogen, arsenic and antimony.
- the cell arrangement may further include a solar sub cell including indium gallium arsenide adjacent to the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony.
- the cell arrangement may further include a solar sub cell including germanium adjacent to the at least one solar sub cell including the alloy of gallium, nitrogen, arsenic and antimony.
- the alloy may have an energy band gap ranging from about 0.6eV to about 1.4 eV or from about 0.9 eV to about 1.1 eV.
- the bandgap of the alloy GaNAsSb can be tuned to a value within the range from about 0.6eV to about 1.4 eV or from about 0.9 eV to about 1.1 eV.
- FIG. 2 shows a schematic of a solar cell 200 including a (Si)Ge-based sub cell 204 (any one of Ge or SiGe) on a substrate 202, a GaNAsSb based sub cell 206 on the (Si)Ge-based sub cell 204, a Ga(In)As based sub cell 208 (any one of GaAs or GalnAs) on the GaNAsSb based sub cell 206 and a (Al)GalnP sub cell 210 (any one of GalnP or AlGalnP) on the Ga(In)As-based sub cell 208 according to various embodiments.
- the first adjacent sub cell there may be a sub cell 208 (the first adjacent sub cell) above the GaNAsSb based sub cell 206.
- the first adjacent sub cell may have a layer having a band gap larger than the band gap of GaNAsSb.
- the corresponding layer of the first adjacent sub cell 208 may include gallium indium arsenide (GalnAs).
- Gallium indium arsenide may have a bandgap ranging from about 1.0 eV to about 1.42 eV.
- the bandgap of gallium indium arsenide may vary with the concentration of indium.
- the corresponding layer of the first adjacent sub cell 208 may include gallium arsenide (GaAs).
- the bandgap of gallium arsenide may be about 1.42 eV.
- the second adjacent sub cell 204 may also have a corresponding layer having a bandgap smaller than the bandgap of GaNAsSb.
- the corresponding layer of the second adjacent sub cell may be silicon germanium (SiGe) having a bandgap ranging from about 0.67 eV to about 1.1 eV.
- the bandgap of SiGe may depend on the concentration of silicon.
- the corresponding layer of the second adjacent sub cell may be germanium.
- the bandgap of germanium may be about 0.67 eV.
- Photons passing out from the first adjacent sub cell 208 (i.e. the Ga(In)As based sub cell) to the GaNAsSb based sub cell 206 may have energies below about 1.42 eV.
- photons having energies ranging from about 0.67 eV to about 1.42 eV may be absorbed by the second adjacent sub cell 204 (i.e. the Ge based sub cell).
- the excess energies above about 0.67eV may be lost as heat.
- the GaNAsSb based sub cell 206 By having the GaNAsSb based sub cell 206 positioned between the GaAs based sub cell 208 and the Ge based sub cell 204 and having the bandgap of the alloy GaNAsSb tuned to a value within the range from about 0.6eV to about 1.4 eV or from about 0.9 eV to about 1.1 eV., the GaNAsSb based sub cell 206 is configured to absorb photons having energies more than the value. As such, some of the energies that would have been lost as heat without the GaNAsSb based sub cell 206 are now converted into kinetic and potential energies in the generated holes and electrons in the GaNAsSb based sub cell 206.
- bandgap of GaNAsSb is tuned to a value within the range from about 0.6eV to about 1.4 eV. or from about 0.9 eV to about 1.1 eV while allowing GaNAsSb to be lattice matched with the substrate 202 and the Ga(In)As and (Si)Ge.
- efficiency of the solar cell 200 may be improved by providing a bandgap between that of Ga(In)As and (Si)Ge, and at the same time reduces generation of defects.
- the corresponding layer of the sub cell on the first adjacent sub cell 210 may include (Al)GalnP.
- the sub cell 210 on the first adjacent sub cell 208 may be configured to absorb photons having energies more than about 1.9eV.
- FIG. 3 shows a schematic of a solar cell 300 including a GaNAsSb based sub cell 304 on a substrate 302, a Ga(In)As based sub cell 306 (any one of GaAs or GalnAs) on the GaNAsSb.based sub cell 304 and a (Al)GalnP based sub cell 308 (any one of GalnP or AlGalnP) on the Ga(In)As based sub cell 306 according to various embodiments.
- the first adjacent sub cell 306 may have a first layer having a bandgap larger than the bandgap of GaNAsSb 304.
- the first layer of the first adjacent sub cell 306 may include gallium indium arsenide (GalnAs). GalnAs may have a bandgap ranging from about 1.0 eV to about 1.42 eV.
- the bandgap of gallium indium arsenide may vary with the concentration of indium.
- the corresponding layer of the first adjacent sub cell 306 may include gallium arsenide (GaAs).
- the bandgap of gallium arsenide may be about 1.42 eV.
- the GaNAsSb based sub cell 304 may be on a substrate 302. Photons passing from the first adjacent sub cell 306 (ie. the GaAs based sub cell) to the GaNAsSb based sub cell 304 will have energies below about 1.42 eV. Without the GaNAsSb based sub cell, photons having energies less than about about 1.42eV will either pass through the substrate 302 or be absorbed by the substrate 302 with subsequent loss of energies of the photons as heat.
- the GaNAsSb based sub cell 304 By having the GaNAsSb based sub cell 304 positioned between the GaAs based sub cell 306 and the substrate 302 and having the bandgap of the alloy GaNAsSb tuned to a value within the range from about 0.6 eV to about 1.4 eV or from about 0.9 eV to about 1.1 eV, the GaNAsSb based sub cell 306 is configured to absorb photons having energies more than the value. As such, some of the excess energies that would have been lost as heat without the GaNAsSb based sub cell 306 are now converted into electrical energies in the generated holes and electrons in the GaNAsSb based sub cell 304.
- bandgap of GaNAsSb is tuned to a Value within the range from about 0.6eV to about 1.4 eV or from about 0.9 eV to about 1.1 eV while allowing GaNAsSb to be lattice matched with the substrate and the Ga(In)As.
- efficiency of the solar cell 300 may be improved by providing a bandgap lower that of GaAs, and at the same time reduces generation of defects.
- the first layer of the sub cell 308 on the first adjacent sub cell 306 may include (Al)GalnP.
- the sub cell 308 on the first adjacent sub cell 306 may be configured to absorb photons having energies more than 1.9eV.
- FIG. 4 shows a schematic of a GaNAsSb based sub cell 400 according to various embodiments.
- the sub cell may include a first layer 404 and a second layer 406 on the first layer 404, wherein the first layer 404 (also referred to as the base layer) may include an alloy consisting of gallium, nitrogen, arsenic and antimony.
- the sub-cell 400 may be used in a multi-junction solar cell.
- an alloy including or consisting of gallium, nitrogen, arsenic and antimony is used in a sub cell of a solar cell or a solar cell.
- the second layer 406 may also be referred to as the emitter layer.
- the second layer 406 may include any suitable material having a bandgap larger or equal than the alloy of GaNAsSb and a lattice constant similar to that of the alloy of GaNAsSb such that the first layer 404 and second layer 406 may be matched to form a substantially unstrained lattice.
- the second layer 406 may include Ga(In)As and (Al)Ga(In)P.
- the second layer 406 may include GaNAsSb.
- the second layer 406 may be of the same material as the first layer 404 or of different material.
- Each sub cell, including the GaNAsSb sub cell may further include a front surface field layer 410.
- the front surface field layer 410 may serve to reduce the surface recombination by reflecting minority carriers back towards the pn junction.
- Each sub cell, including the GaNAsSb sub cell may further include a back surface field layer 402.
- the back surface field layer 402 may help to reduce the recombination of minority carriers by reflecting them back towards the pn junction.
- the front surface field layer 410 and the back surface field layer 402 may include GaAs or AlGaAs or GalnP or AlGalnP.
- Each sub cell including the GaNAsSb sub cell may also include a desorption blocker layer 408.
- the desorption blocker layer 408 may prevent surface damage during the high temperature in-situ annealing process.
- the first layer 404 may be doped with dopants of a first conductivity type and the second layer 406 is doped with dopants with a second conductivity type.
- the optional back surface field layer 402 and the first layer 404 are doped with dopants of the first conductivity type while the optional front surface field layer 410, the optional desorption blocker layer 408 and the second layer 406 are doped with dopants of the second conductivity type.
- the first layer 404 is doped with n-type dopants such as silicon.
- the second layer 406 is doped with p-type dopants such as beryllium, carbon or zinc.
- the optional back surface field layer 402 and the first layer 404 are doped with n-type dopants such as silicon while the optional front surface field layer 410, the optional desorption blocker layer 408 and the second layer 406 are doped with p-type dopants such as beryllium, carbon or zinc.
- the first layer 404 may be doped with p-type dopants such as beryllium, carbon or zinc.
- the second layer 406 is doped with n-type dopants such as silicon.
- the optional back surface field layer 402 and the first layer 404 are doped with p-type dopants such as beryllium, carbon or zinc while the optional front surface field layer 410, the optional desorption blocker layer 408 and the second layer 406 are doped with n-type dopants such as silicon.
- the solar cell may further include a plurality of electrode.
- Each sub-cell may have a pair of electrodes leading to an external circuit.
- the solar cell having the GaNAsSb sub cell may have a solar cell efficiency higher by at least 5% compared to a conventional solar cell without the GaNAsSb sub cell.
- a method of forming a solar cell including stacking a plurality of solar sub cells above one another, wherein at least one solar sub cell of the plurality of solar sub cells may include an alloy of gallium, nitrogen, arsenic and antimony.
- a layer of at least one sub cell of the plurality of sub cells includes an alloy comprising or consisting of gallium, nitrogen, arsenic and antimony is formed by growing epitaxial layers of GaAsSb and subjecting the epitaxial layers to exposure of nitrogen.
- FIG. 5 shows a graph illustrating the photo-current of the GaNAsSb sub-cell in FIG. 4 measured under one sun AM1.5D spectral condition.
- the measurement was conducted using a 850nm long pass filter that blocked photons with energy higher than the GaAs bandgap energy of 1.42eV. This filter was selected so that the performance of the GaNAsSb material in the triple junction photovoltaic (PV) stack can be stimulated.
- the GaNAsSb sub cell is capable of delivering an open circuit voltage, Voc of 0.47V, short circuit current density, Jsc of 10.5mN/cm and fill factor of 72%.
- the value of Voc n ay be further increased by a higher solar concentration. Higher Voc leads to higher energy conversion efficiency.
- FIG. 6 shows a graph plotting the open circuit voltage Voc of the GaNAsSb sub-cell according to various embodiments in FIG. 4 against solar concentration. It can be seen that the Voc value of the GaNAsSb sub cell can reach 0.7V at about 200 sun concentration, making the GaNAsSb sub-cell suitable for CPV applications. FIG. 6 shows that the value of Voc is increased by a higher solar concentration. Higher Voc leads to higher energy conversion efficiency.
- FIG. 7 is a graph plotting the current density against the open circuit voltage Voc of a conventional GalnP/GaAs dual junction solar cell and a GalnP/GaAs/GaNAsSb triple junction solar cell according to various embodiments in FIG. 3. It can be seen that the incorporation of the GaNAsSb sub-cell improves the value of Voc by 0.4V, leading to higher energy conversion efficiency of the cell.
- FIG. 8 is a graph plotting the open circuit voltage Voc against solar concentration of a GalnP/GaAs/GaNAsSb triple junction solar cell according to various embodiments in FIG. 3. As shown in FIG. 8, by using a solar concentrator, the Voc value of the GalnP/GaAs/GaNAsSb triple junction solar cell can be further increased to about 2.80V at a solar concentration of about 200.
- the term “substantially” may be quantified as a variance of +/- 5% from the exact or actual.
- the phrase "A is (at least) substantially the same as B" may encompass embodiments where A is exactly the same as B, or where A may be within a variance of +/- 5%, for example of a value, of B, or vice versa.
- the term "about” as applied to a numeric value encompasses the exact value and a variance of +/- 5% of the value.
Abstract
Description
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US14/396,369 US20150083204A1 (en) | 2012-04-23 | 2013-02-25 | Cell arrangement |
EP13780513.1A EP2842166A4 (en) | 2012-04-23 | 2013-02-25 | A cell arrangement |
CN201380019537.6A CN104247032B (en) | 2012-04-23 | 2013-02-25 | Battery arrangement apparatus |
KR20147032728A KR20150006452A (en) | 2012-04-23 | 2013-02-25 | A cell arrangement |
SG11201405540QA SG11201405540QA (en) | 2012-04-23 | 2013-02-25 | A cell arrangement |
JP2015508922A JP2015518283A (en) | 2012-04-23 | 2013-02-25 | Cell array |
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EP (1) | EP2842166A4 (en) |
JP (1) | JP2015518283A (en) |
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US20170110613A1 (en) * | 2015-10-19 | 2017-04-20 | Solar Junction Corporation | High efficiency multijunction photovoltaic cells |
KR101931712B1 (en) * | 2016-12-28 | 2018-12-24 | 엘지전자 주식회사 | Compound semiconductor solar cell |
US10586884B2 (en) * | 2018-06-18 | 2020-03-10 | Alta Devices, Inc. | Thin-film, flexible multi-junction optoelectronic devices incorporating lattice-matched dilute nitride junctions and methods of fabrication |
CN109103278B (en) * | 2018-08-15 | 2020-03-10 | 中山德华芯片技术有限公司 | Aluminum-free efficient six-junction solar cell and preparation method thereof |
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US20090014061A1 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSb solar cells grown by molecular beam epitaxy |
US20110232730A1 (en) * | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
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JPS63261882A (en) * | 1987-04-20 | 1988-10-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element |
JPH1012905A (en) * | 1996-06-27 | 1998-01-16 | Hitachi Ltd | Solar cell and manufacture thereof |
US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US7807921B2 (en) * | 2004-06-15 | 2010-10-05 | The Boeing Company | Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer |
US20100282306A1 (en) * | 2009-05-08 | 2010-11-11 | Emcore Solar Power, Inc. | Multijunction Solar Cells with Group IV/III-V Hybrid Alloys |
US20100282305A1 (en) * | 2009-05-08 | 2010-11-11 | Emcore Solar Power, Inc. | Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys |
US8232470B2 (en) * | 2009-09-11 | 2012-07-31 | Rosestreet Labs Energy, Inc. | Dilute Group III-V nitride intermediate band solar cells with contact blocking layers |
JP5215284B2 (en) * | 2009-12-25 | 2013-06-19 | シャープ株式会社 | Multi-junction compound semiconductor solar cell |
WO2013043875A2 (en) * | 2011-09-22 | 2013-03-28 | Rosestreet Labs Energy, Inc. | Compositionally graded dilute group iii-v nitride cell with blocking layers for multijunction solar cell |
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2013
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- 2013-02-25 WO PCT/SG2013/000075 patent/WO2013162466A1/en active Application Filing
- 2013-02-25 KR KR20147032728A patent/KR20150006452A/en not_active Application Discontinuation
- 2013-02-25 JP JP2015508922A patent/JP2015518283A/en active Pending
- 2013-02-25 EP EP13780513.1A patent/EP2842166A4/en not_active Withdrawn
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US20090014061A1 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSb solar cells grown by molecular beam epitaxy |
US20110232730A1 (en) * | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
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KR20150006452A (en) | 2015-01-16 |
EP2842166A1 (en) | 2015-03-04 |
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US20150083204A1 (en) | 2015-03-26 |
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EP2842166A4 (en) | 2015-12-09 |
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