WO2013085019A1 - 接続方法、接続構造体、絶縁性接着部材、及び、接着部材付電子部品及びその製造方法 - Google Patents
接続方法、接続構造体、絶縁性接着部材、及び、接着部材付電子部品及びその製造方法 Download PDFInfo
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- WO2013085019A1 WO2013085019A1 PCT/JP2012/081749 JP2012081749W WO2013085019A1 WO 2013085019 A1 WO2013085019 A1 WO 2013085019A1 JP 2012081749 W JP2012081749 W JP 2012081749W WO 2013085019 A1 WO2013085019 A1 WO 2013085019A1
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- Prior art keywords
- insulating adhesive
- electrode
- adhesive layer
- electronic component
- filler
- Prior art date
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Definitions
- the present invention provides a connection method for connecting a substrate and an electronic component via an insulating adhesive member in which two insulating adhesive layers are laminated, a connection structure obtained by this connection method, an insulating adhesive member, and
- the present invention relates to an electronic component with an insulating adhesive member and a method for manufacturing the same.
- thermosetting adhesive is poured between the semiconductor chip and the substrate and cured.
- a liquid adhesive such as NCP (Non Conductive Paste), a non-underfill agent, or a film adhesive such as NCF (Non Conductive Film) is applied or pasted to the substrate in advance, and then a hot press bonder A so-called first-in method has been attempted in which the resin is cured by heat and pressure such as to connect the bumps of the IC chip and the electrode pads of the substrate.
- NCP is applied to the wafer before IC chip is divided and semi-cured, or after NCF is pasted, the thickness of the wafer is reduced by back grinding, and the wafer is divided into individual pieces by dicing, and the IC chip with NCF
- a so-called first pasting method is performed in which an IC chip with NCF is mounted on an organic substrate or the like by a flip chip bonder.
- a spherical inorganic filler such as silica or alumina is added to a resin constituting an adhesive such as an underfill agent, NCP, or NCF in order to lower the linear expansion coefficient.
- an adhesive such as an underfill agent, NCP, or NCF
- the filler is added in an amount of 30% by weight or more based on the weight of the resin composition of the adhesive.
- the present invention has been proposed in view of such conventional circumstances, and in the case of connecting an electronic component and a substrate using an insulating adhesive member containing a filler, the electrode of the electronic component and the electrode of the substrate
- a connection method capable of preventing biting of the filler between them and exhibiting excellent conduction reliability, a connection structure connected by this connection method, an insulating adhesive member, and an electron with an adhesive member An object is to provide a component and a method for manufacturing the component.
- connection method of the present invention is a connection method in which the surface on which the electrode of the substrate is formed and the surface on which the electrode of the electronic component is formed are connected via an insulating adhesive member.
- the insulating adhesive member is formed by laminating a first insulating adhesive layer containing a filler in the insulating adhesive composition and a second insulating adhesive layer not containing a filler in the insulating adhesive composition. And satisfying H / 2 ⁇ Tf ⁇ H ⁇ Tf + Tn in the height H of the electrode of the electronic component, the thickness Tf of the first insulating adhesive layer, and the thickness Tn of the second insulating adhesive layer.
- the surface on which the electrode of the substrate is formed and the electrode on the electronic component are arranged via the insulating adhesive member arranged so that the surface on which the first insulating adhesive layer and the electrode on the electronic component are formed are opposed to each other. Connect the formed surface and connect the electrode of the substrate and the electrode of the electronic component.
- the electronic component with an adhesive member is an insulating component having an adhesive member formed by attaching an insulating adhesive member to a surface of the electronic component on which an electrode is formed.
- the member is formed by laminating a first insulating adhesive layer containing a filler in the insulating adhesive composition and a second insulating adhesive layer not containing a filler in the insulating adhesive composition,
- the first insulating adhesive layer is affixed to the surface on which the electrode of the electronic component is formed so as to face the electrode of the electronic component, the height H of the electrode of the electronic component, the first insulating adhesive layer
- the thickness Tf and the thickness Tn of the second insulating adhesive layer satisfy H / 2 ⁇ Tf ⁇ H ⁇ Tf + Tn.
- the method for manufacturing an electronic component with an adhesive member according to the present invention is a method for manufacturing an electronic component with an adhesive member in which an insulating adhesive member is bonded to the surface of the electronic component on which an electrode is formed.
- the insulating adhesive member includes a first insulating adhesive layer containing a filler in the insulating adhesive composition, and a second insulating adhesive layer not containing the filler in the insulating adhesive composition; Are stacked, and the height H of the electrode of the electronic component, the thickness Tf of the first insulating adhesive layer, and the thickness Tn of the second insulating adhesive layer H / 2 ⁇ Tf ⁇ H ⁇
- An insulating adhesive member is affixed to the surface on which the electrode of the electronic component is formed so that Tf + Tn is satisfied and the first insulating adhesive layer faces the electrode of the electronic component.
- the insulating adhesive member of the present invention is an insulating adhesive member for connecting a surface on which an electrode of a substrate is formed and a surface on which an electrode of an electronic component is formed.
- a first insulating adhesive layer that includes a filler in the insulating adhesive composition and is affixed to a surface on which the electrode of the electronic component is formed so as to face the electrode of the electronic component; and an insulating adhesive composition
- a second insulating adhesive layer that does not contain a filler, and the height H of the electrode of the electronic component, the thickness Tf of the first insulating adhesive layer, and the second insulating adhesive
- the layer thickness Tn satisfies H / 2 ⁇ Tf ⁇ H ⁇ Tf + Tn.
- connection structure of the present invention is a connection in which the surface of the substrate on which the electrode is formed and the surface on which the electrode of the electronic component is formed are connected via an insulating adhesive member.
- the insulating adhesive member includes a first insulating adhesive layer that contains a filler in the insulating adhesive composition, and a first that does not contain a filler in the insulating adhesive composition.
- Two insulating adhesive layers are laminated, and in the height H of the electrode of the electronic component, the thickness Tf of the first insulating adhesive layer, and the thickness Tn of the second insulating adhesive layer, H / 2 ⁇ Tf ⁇ H ⁇ Tf + Tn is satisfied, and the first insulating adhesive layer and the surface on which the electrode of the electronic component is formed face each other through an insulating adhesive member disposed so as to face each other.
- the thickness of the first and second insulating adhesive layers is the height H of the electrode of the electronic component, and the first insulating property containing the filler.
- the thickness Tf of the adhesive layer and the thickness Tn of the second insulating adhesive layer containing no filler satisfy H / 2 ⁇ Tf ⁇ H ⁇ Tf + Tn.
- substrate are connected through the insulating adhesive member arrange
- FIG. 1 is a perspective view showing an appearance of an example of an IC chip with a film.
- FIG. 2 is a cross-sectional view of the IC chip with film.
- FIG. 3 is a partial cross-sectional view partially showing a state in which the IC chip with film is arranged on the electrode formation surface of the printed wiring board.
- FIG. 4 is a partial cross-sectional view partially showing a state in which an IC chip with a film as a temporary configuration is arranged on an electrode formation surface of a printed wiring board.
- FIG. 5 is a partial cross-sectional view partially showing a state in which an IC chip with a film as a temporary configuration is arranged on an electrode formation surface of a printed wiring board.
- FIG. 6 is a cross-sectional view schematically showing an example of a wafer for manufacturing an IC chip.
- FIG. 7 is a diagram illustrating an example of a dicing apparatus which is an example of a dividing apparatus.
- FIG. 8 is a schematic cross-sectional view at the stage of capturing an image of the surface of the wafer.
- FIG. 9 is a diagram for explaining a connection method in the present embodiment.
- FIG. 10 is a diagram for explaining a connection method in the present embodiment.
- connection method In the connection method in the present embodiment, the surface of the substrate on which the electrode is formed and the surface on which the electrode of the electronic component is formed are connected via an insulating adhesive member.
- this insulating adhesive member a first insulating adhesive layer containing a filler and a second insulating adhesive layer not containing a filler are laminated, and a release group is formed on the second insulating adhesive layer. Material is provided.
- the electrode of the electronic component is H
- the thickness of the first insulating adhesive layer is Tf
- the thickness of the second insulating adhesive layer is Tn
- the thickness of the first insulating adhesive layer facing the electrode forming surface of the electronic component and the thickness of the entire insulating adhesive member are related to the height of the electrode of the electronic component as shown in (Equation 1). It is controlled. That is, the tip of the electrode of the electronic component is in the second insulating adhesive layer that does not contain the filler. Accordingly, when the electronic component with the adhesive member is connected to the substrate by thermal pressing, the filler is not caught between the electrode of the electronic component and the electrode of the substrate. And since the insulating adhesive composition which does not contain the filler which comprises a 2nd insulating adhesive layer between these electrodes is easily excluded, electrodes are connected completely. Thereby, it is possible to exhibit excellent conduction reliability in the connection structure.
- FIG. 1 is a perspective view showing an appearance of an IC chip 1 with a film in which an insulating adhesive film 20 is attached to an IC chip 10.
- FIG. 2 is a cross-sectional view of the film-attached IC chip 1.
- Bumps 12 are formed on one surface (for example, a functional surface) of the IC chip 10.
- An insulating adhesive film 20 is affixed to the surface of the IC chip 10 on which the bumps 12 are formed (bump forming surface 11).
- the insulating adhesive film 20 is formed by laminating a first insulating adhesive layer 21 containing a filler 21b and a second insulating adhesive layer 22 containing no filler, and the second insulating adhesive layer 22 is laminated.
- a release substrate 23 is provided on the top.
- the insulating adhesive film 20 is affixed to the bump forming surface 11 of the IC chip 10 so that the bump forming surface 11 and the first insulating adhesive layer 21 face each other.
- the first insulating adhesive layer 21 contains the filler 21b in the insulating adhesive composition 21a.
- the 2nd insulating adhesive layer 22 consists only of the insulating adhesive composition 22a which does not contain a filler.
- the bump 12 includes a copper (Cu) pillar 12a and a hemispherical solder cap 12b provided at the tip of the copper pillar 12a.
- the configuration of the bump 12 is not limited to this, and may be, for example, a bump (copper pillar bump) made only of a copper pillar, an Au plated bump, an Au stand bump, a solder bump, or the like.
- the height of the bump 12 can be used in a range of 5 ⁇ m to 100 ⁇ m, preferably 5 ⁇ m to 70 ⁇ m, and more preferably 30 ⁇ m to 70 ⁇ m.
- the thickness of the first insulating adhesive layer 21 is Tf
- the thickness of the second insulating adhesive layer 22 is Tn
- FIG. 3 is a partial cross-sectional view partially showing a state in which the IC chip with film 1 is arranged on the surface (electrode forming surface 60a) on which the electrode pad 61 of the printed wiring board 60 which is an example of the substrate is formed.
- the printed wiring board 60 is made of a glass epoxy resin laminate having a copper foil attached thereto.
- the thickness Tf of the first insulating adhesive layer 21 containing the filler 21 b is set so as to satisfy H / 2 ⁇ Tf in relation to the thickness H of the bump 12.
- the insulating adhesive composition 22a that does not contain the filler constituting the second insulating adhesive layer 22 is easily excluded between the bump 12 and the electrode pad 61 by heat and pressure.
- the tips of the bumps 12 are disposed, and the bumps 12 and the electrode pads 61 are opposed to each other in this state.
- the filler is not caught between the bumps 12 and the electrode pads 61.
- the bump 12 and the electrode pad 61 are completely connected, in the connection structure of the IC chip 10 and the printed wiring board 60, excellent conduction reliability can be exhibited.
- the thickness of the insulating adhesive film 20 is set to be equal to or higher than the height of the bump 12, when the IC chip with film 10 is connected to the printed wiring board 60, the insulating adhesive film 20 is insulated.
- the adhesive adhesive compositions 21a and 22a can be filled in a sufficient amount.
- Examples of the inorganic filler include carbon, silicon dioxide, metal oxide fine particles such as alumina, silica, magnesia, and ferrite, silicates such as talc, mica, kaolin, and zeolite, barium sulfate, calcium carbonate, and fullerene. Examples thereof include fine particles. Examples of the inorganic filler include glass microbeads, carbon fibers, chalk, such as quartz, asbestos, feldspar, mica and the like.
- organic filler examples include epoxy resin, melamine resin, urea resin, acrylic resin, phenol resin, polyimide resin, polyamide resin, polyester resin, and Teflon (registered trademark) resin. Of these, carbon and silicon dioxide are preferable.
- the material which comprises a filler may be used independently or may be used in mixture of 2 or more types.
- the insulating adhesive composition 21a of the first insulating adhesive layer 21 and the insulating adhesive composition 22a of the second insulating adhesive layer 22 are all film-forming resin, thermosetting resin, latent It is a normal binder (adhesive) containing an adhesive curing agent, a silane coupling agent and the like.
- the film forming resin is preferably a resin having an average molecular weight of about 10,000 to 80,000.
- the film forming resin include various resins such as an epoxy resin, a modified epoxy resin, a urethane resin, and a phenoxy resin.
- phenoxy resin is particularly preferable from the viewpoint of film formation state, connection reliability, and the like.
- thermosetting resin is not particularly limited as long as it has fluidity at room temperature, and examples thereof include commercially available epoxy resins and acrylic resins.
- the epoxy resin is not particularly limited.
- naphthalene type epoxy resin biphenyl type epoxy resin, phenol novolac type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, phenol aralkyl type epoxy resin.
- an acrylic compound, liquid acrylate, etc. can be selected suitably.
- what made acrylate the methacrylate can also be selected from methyl acrylate, ethyl acrylate, isopropy
- the latent curing agent is not particularly limited, and examples thereof include various curing agents such as a heat curing type and a UV curing type.
- the latent curing agent does not normally react, but is activated by various triggers selected according to applications such as heat, light, and pressure, and starts the reaction.
- the activation method of the thermally activated latent curing agent includes a method of generating active species (cations and anions) by a dissociation reaction by heating, and the like.
- Thermally active latent curing agents include imidazole series, hydrazide series, boron trifluoride-amine complex, sulfonium salt, amine imide, polyamine salt, dicyandiamide, and modified products thereof. The above mixture may be sufficient. Among these, a microcapsule type imidazole-based latent curing agent is preferable.
- the silane coupling agent is not particularly limited, and examples thereof include an epoxy type, an amino type, a mercapto sulfide type, and a ureido type. By adding the silane coupling agent, the adhesion at the interface between the organic material and the inorganic material is improved.
- FIG. 6 is a cross-sectional view schematically showing an example of a wafer for manufacturing an IC chip.
- the wafer 100 is a semiconductor wafer such as a silicon wafer.
- Bumps 12 are formed on one surface of the wafer 100.
- FIG. 7 is a diagram illustrating a schematic configuration of a dicing apparatus 300 that is an example of a dividing apparatus.
- an insulating adhesive film is formed on the bump forming surface 100a of the wafer 100 by a roll laminator (not shown) so that the first insulating adhesive layer 21 faces the bump forming surface 100a of the wafer 100. 20 is pasted (pasting step).
- a surface (back surface 100b) opposite to the bump forming surface 100a of the wafer 100 is polished by a back grinding apparatus (not shown) (back grinding step).
- a back grinding apparatus not shown
- the back surface 100b of the wafer 100 to which the insulating adhesive film 20 is attached is attached to the dicing tape 150 (attachment step).
- the wafer 100 can be divided into a plurality of IC chips 10.
- the dicing apparatus 300 includes a table 301, an alignment stage 302, an imaging unit 303, a cutting unit 304, and a control unit 305.
- the wafer 100 to which the insulating adhesive film 20 is attached is placed on the table 301 of the dicing apparatus 300 while being attached to the dicing tape 150.
- the table 301 can fix the dicing tape 150 holding the wafer 100 on the table 301, for example, by suction of a decompression device (not shown).
- the alignment stage 302 moves the table 301 in the x direction and the y direction based on the control of the control unit 305.
- the imaging unit 303 captures an image of the surface 100a of the wafer 100 by receiving light reflected by the surface 100a of the wafer 100 and transmitted through the insulating adhesive film 20.
- the imaging unit 303 includes, for example, an illumination member that illuminates the wafer 100, an optical system that receives light reflected by the surface 100a of the wafer 100, and an imaging element that captures an image captured by the optical system.
- the imaging unit 303 transmits information on the captured image to the control unit 305.
- the configuration of the imaging unit 303 is not particularly limited, and for example, a visible light image can be captured.
- the cutting unit 304 can cut the wafer 100 based on the control of the control unit 305.
- the cutting unit 304 has a blade 304 a that cuts the wafer 100.
- the cutting unit 304 presses the rotating blade 304 a against the wafer 100 to cut the wafer 100.
- the control unit 305 includes an image processing unit 305a and a driving unit 305b.
- the image processing unit 305 a receives image information on the surface of the wafer 100 from the imaging unit 303.
- the image processing unit 305a determines the position of the scribe line 41 based on the received image information.
- the image processing unit 305 a determines to divide the wafer 100 at the position of the scribe line 41.
- the image processing unit 305a transmits information about the position where the wafer 100 is divided to the driving unit 305b.
- the driving unit 305b receives information about the position where the wafer 100 is divided from the image processing unit 305a.
- the drive unit 305b drives the alignment stage 302 and the cutting unit 304 based on information about the position where the wafer 100 is divided. Thereby, the drive part 305b can divide
- the drive unit 305b drives the cutting unit 304 to move the cutting unit 304 downward while rotating the blade 304a, thereby bringing the blade 304a into contact with the wafer 100.
- the driving unit 305b drives the alignment stage 302 to move the wafer 100 in the x direction.
- the wafer 100 can be divided in the x direction by the cutting process along the scribe line 41 of the cutting unit 304.
- FIG. 8 is a schematic cross-sectional view at the stage of capturing an image of the surface 100a of the wafer 100.
- FIG. 8 first, the imaging unit 303 of the dicing apparatus 300 is reflected by the surface 100a of the wafer 100, and the peeling base material 23, the second insulating adhesive layer 22, and the first insulating adhesive layer. By receiving the light transmitted through 21, an image of the surface 100 a of the wafer 100 is taken.
- the imaging unit 303 When the light transmittance of 440 nm or more and 700 nm or less of the insulating adhesive film 20 is 74% or more, an inexpensive device that captures an image in the visible light region can be used as the imaging unit 303. Further, images of the scribe lines 41, the bumps 12, the circuit patterns, the alignment marks, and the like can be taken with the insulating adhesive film 20 attached to the surface 100a of the wafer 100. Thereby, the wafer 100 can be divided
- the image processing unit 305a of the dicing apparatus 300 receives information on the image captured by the imaging unit 303.
- the image processing unit 305a determines the position where the wafer 100 is divided based on the information of the captured image.
- the image processing unit 305 a recognizes the position of the scribe line 41 from the image of the wafer 100 and determines to divide the wafer 100 along the scribe line 41.
- the image processing unit 305 a recognizes the position of the bump 12 or the alignment mark from the image of the wafer 100 and recognizes the position of the scribe line 41.
- the driving unit 305b drives the alignment stage 302 and the cutting unit 304 based on this determination, divides the wafer 100, and separates the chip 1 with film into individual pieces.
- the dicing apparatus 300 divides the wafer 100 with the dicing tape 150 whose periphery is fixed by a frame 151 attached to the back surface of the wafer 100, and separates the IC chip with film 1 into individual pieces.
- the IC chip with film 1 can be manufactured by such a dicing process.
- [4 IC chip and printed wiring board connection method] 9 and 10 are diagrams for explaining a connection method in the present embodiment.
- the IC chip with film 1 obtained by the dicing process is connected to the printed wiring board 60 by heat and pressure.
- the peeling substrate 23 is peeled from the IC chip with film 1. Then, as shown in FIG. 9, the electrode pads 61 of the printed wiring board 60 placed on the table 500 and the bumps 12 of the IC chip 10 are opposed to each other. That is, the second insulating adhesive layer 22 and the surface of the printed wiring board 60 on which the electrode pads 61 are formed (electrode formation surface 60a) are opposed to each other. In this state, the film-mounted chip 1 in a state where the peeling base material 23 is peeled off is placed on the electrode forming surface 60a of the printed wiring board 60 (placement step).
- the IC chip 10 top lowers the heat pressure head 501 in the direction of the arrow, for example under a pressure 30N / m 2 ⁇ 70N / m 2 pressure of about, insulating adhesive film Heating temperature equal to or higher than the curing temperature of 20 thermosetting resin (depending on the type of thermosetting resin, for example, heating is performed at a temperature of about 180 to 270 ° C. for about 15 to 25 seconds.
- the adhesive compositions 21a and 22a are melted to connect the bumps 12 and the electrode pads 61, and the insulating adhesive compositions 21a and 22a are cured in this state, whereby the IC chip 10 and the printed wiring board 60 are separated.
- a connected connection structure can be obtained (connection process).
- the insulating adhesive composition 22a that does not contain the filler constituting the second insulating adhesive layer 22 is easily removed between the bump 12 and the electrode pad 61 by heat and pressure. .
- the bump 12 and the electrode pad 61 are opposed to each other. Even if the insulating adhesive compositions 21a and 22a of the insulating adhesive film 20 are melted by heat and pressure and the bump 12 and the electrode pad 61 are connected, the filler is not present between the bump 12 and the electrode pad 61. It will not be bitten. Thereby, the bump 12 and the electrode pad 61 are completely connected. As a result, excellent connection reliability can be exhibited in the connection structure between the IC chip 10 and the printed wiring board 60.
- substrate in this Embodiment will not be specifically limited if it is a board
- a printed wiring board which consists of a glass epoxy resin laminated body to which the copper foil was stuck, a glass substrate, a plastic substrate, etc. Any of these substrates may be used.
- the electronic component in the present embodiment may be another electronic component instead of the IC chip 10.
- a semiconductor chip other than an IC chip such as an LSI (Large Scale Integration) chip, a semiconductor element such as a chip capacitor, a printed wiring board, a semiconductor mounting material COF (Chip On Film) for driving a liquid crystal can be used.
- LSI Large Scale Integration
- COF Chip On Film
- the electrodes of the electronic component are not limited to the bumps 12. Further, the electrode of the substrate is not limited to the electrode pad 61. Any electrode may be used as long as it can be electrically connected to each other, and any terminal electrode, wiring electrode, or the like may be used.
- the insulating adhesive member is not limited to the insulating adhesive film (NCF) as described above.
- NCF insulating adhesive film
- an insulating adhesive composition paste containing a filler and an insulating adhesive composition paste containing no filler are each expressed by the following formula (1) in relation to the bump thickness H. It may be a two-layer insulating adhesive paste (NCP) obtained by applying and drying at the thicknesses Tf and Tn that satisfy the requirements.
- Example 1 50 parts by mass of phenoxy resin (trade name: YP-50, manufactured by Nippon Steel Chemical Co., Ltd.), 25 parts by mass of bisphenol A epoxy resin (trade name: EP-828, manufactured by Mitsubishi Chemical Corporation), solid epoxy resin (trade name) : HP-7200H (manufactured by DIC Corporation) 25 parts by mass of silica filler (trade name: SO-E6, manufactured by Admatechs Co., Ltd.) 50 parts by mass of filler having a thickness (Tf) A 25 ⁇ m first insulating adhesive layer was formed on the first release substrate.
- phenoxy resin 50 parts by mass of phenoxy resin, 25 parts by mass of bisphenol A epoxy resin, 25 parts by mass of solid epoxy resin (any product name and manufacturer is the same as the first insulating adhesive), and a thickness not containing filler ( Tn)
- Tn a thickness not containing filler
- the insulating adhesive film in a state where the first peeling base material was peeled off was attached so that the first insulating adhesive layer adhered to the wafer by laminating with a roll laminator.
- the wafer was thinned by a background device.
- the wafer with the insulating adhesive film attached thereto was transferred to a dicing tape and separated into pieces by blade dicing.
- the obtained IC chip with a film was connected to a printed wiring board by a flip chip bonder at 250 ° C., 50 N / m 2 , under a heat and pressure condition of 20 seconds.
- the obtained connection structure was separated into pieces by dicing to obtain a test piece of Example 1.
- the IC chip is an IC chip (6) having bumps with a height (H) of 30 ⁇ m formed by providing a solder cap (Sn2.5Ag) with a height of 10 ⁇ m at the tip of a copper pillar with a diameter of 33 ⁇ m and a height of 20 ⁇ m. .3 nm ⁇ 6.3 nm ⁇ 0.2 mm thickness).
- the printed wiring board is a glass epoxy board (trade name: 679F, manufactured by Hitachi Chemical Co., Ltd., 38 mm ⁇ 38 mm ⁇ 0) having an electrode pad (Au / Ni plated Cu base) on which a 20 ⁇ m thick solder surface layer is formed. .6 mm thickness).
- Example 2 In Example 2, a solder cap (Sn2.5Ag) having a height of 10 ⁇ m is provided at the tip of a copper pillar having a height of 30 ⁇ m, a bump height (H) of the IC chip is set to 40 ⁇ m, and the first insulating adhesive A test piece of the connection structure was prepared in the same manner as in Example 1 except that the thickness (Tf) of the layer was 30 ⁇ m and the thickness (Tn) of the second insulating adhesive layer was 15 ⁇ m.
- Example 3 In Example 3, a solder cap (Sn2.5Ag) having a height of 20 ⁇ m is provided at the tip of a copper pillar having a height of 50 ⁇ m, the bump height (H) of the IC chip is set to 70 ⁇ m, and the first insulating adhesive A test piece of the connection structure was prepared in the same manner as in Example 1 except that the thickness (Tf) of the layer was 50 ⁇ m and the thickness (Tn) of the second insulating adhesive layer was 25 ⁇ m.
- Comparative Example 1 In Comparative Example 1, the height (H) of the bump of the IC chip is set to 30 ⁇ m, the thickness (Tf) of the first insulating adhesive layer is set to 20 ⁇ m, and the thickness (Tn) of the second insulating adhesive layer is set. ) was changed to 5 ⁇ m, and a test piece of a connection structure was prepared in the same manner as in Example 1.
- Comparative Example 2 In Comparative Example 2, the height (H) of the bump of the IC chip is set to 30 ⁇ m, the thickness (Tf) of the first insulating adhesive layer is set to 13 ⁇ m, and the thickness (Tn) of the second insulating adhesive layer is set. ) was set to 20 ⁇ m, and a test piece of a connection structure was prepared in the same manner as in Example 1.
- Comparative Example 3 In Comparative Example 3, the height (H) of the bump of the IC chip is set to 30 ⁇ m, the thickness (Tf) of the first insulating adhesive layer is set to 35 ⁇ m, and the thickness (Tn) of the second insulating adhesive layer is set. ) was changed to 5 ⁇ m, and a test piece of a connection structure was prepared in the same manner as in Example 1.
- Example 4 A test piece of a connection structure was prepared in the same manner as in Example 2 except that the insulating adhesive film was attached with a roll laminator so that the second insulating adhesive layer containing no filler was adhered to the wafer.
- Example 5 A test piece of a connection structure was prepared in the same manner as in Example 2 except that the insulating adhesive film was composed of only a first insulating adhesive layer containing a filler having a thickness (Tf) of 45 ⁇ m.
- Example 6 A test piece of a connection structure was prepared in the same manner as in Example 2 except that the insulating adhesive film was composed of only a second insulating adhesive layer having a thickness (Tn) of 45 ⁇ m and containing no filler.
- the insulating adhesive film in the IC chip with a film has the bump height H of the IC chip, the thickness Tf of the first insulating adhesive layer 21, and the second insulating adhesive layer.
- H / 2 ⁇ Tf ⁇ H ⁇ Tf + Tn (Formula 1) is satisfied.
- the half of the bump height (H / 2) is equal to or greater than the thickness (Tf) of the first insulating adhesive layer containing the filler (Tf ⁇ H / 2). It is considered that the amount of filler in the insulating adhesive layer 1 is small, so that the filler content is small, and thus the effect of suppressing the thermal expansion coefficient by the filler cannot be obtained, and the conduction resistance value is increased.
- Comparative Example 6 since it is connected only by the second insulating adhesive layer not containing the filler, it is considered that the effect of suppressing the thermal expansion coefficient by the filler cannot be obtained, and the conduction resistance value is increased. .
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Abstract
Description
本出願は、日本国において2011年12月9日に出願された日本特許出願番号特願2011-270125を基礎として優先権を主張するものであり、この出願は参照されることにより、本出願に援用される。
1 接続方法の概要
2 フィルム付ICチップ
3 フィルム付ICチップの製造方法
4 ICチップとプリント配線基板との接続方法
5 実施例
本実施の形態における接続方法は、基板の電極が形成された面と、電子部品の電極が形成された面とを絶縁性接着部材を介して接続するものである。この絶縁性接着部材は、フィラーを含有する第1の絶縁性接着剤層と、フィラーを含有しない第2の絶縁性接着剤層とが積層され、第2の絶縁性接着剤層上に剥離基材が設けられている。
以下、電子部品の一例であるICチップの電極形成面に、絶縁性接着部材の一例である絶縁性接着フィルムが貼付されてなるフィルム付ICチップについて説明する。
次に、フィルム付ICチップ1の製造方法の一例について説明する。図6は、ICチップを製造するためのウェハの一例を概略的に示す断面図である。ウェハ100は、シリコンウェハ等の半導体ウェハである。ウェハ100の一方の表面には、バンプ12が形成されている。また、図7は、分割装置の一例であるダイシング装置300の概略的な構成を示す図である。
図9、10は、本実施の形態における接続方法を説明するための図である。本実施の形態では、熱加圧により、ダイシング処理によって得られたフィルム付ICチップ1をプリント配線基板60に接続する。
次に、本発明の具体的な実施例について説明する。
フェノキシ樹脂(商品名:YP-50、新日鐵化学株式会社製)50質量部、ビスフェノールAエポキシ樹脂(商品名:EP-828、三菱化学株式会社製)25質量部、固形エポキシ樹脂(商品名:HP-7200H、DIC株式会社製)25質量部に、粒径2μmのシリカフィラー(商品名:SO-E6、株式会社アドマテックス製)50質量部のフィラーを分散させてなる厚さ(Tf)25μmの第1の絶縁性接着剤層を第1の剥離基材上に作成した。
実施例2では、高さ30μmの銅ピラーの先端に、高さ10μmのハンダキャップ(Sn2.5Ag)を設け、ICチップのバンプの高さ(H)を40μmとし、第1の絶縁性接着剤層の厚さ(Tf)を30μmとし、第2の絶縁性接着剤層の厚さ(Tn)を15μmとした以外は、実施例1と同様にして接続構造体のテストピースを作成した。
実施例3では、高さ50μmの銅ピラーの先端に、高さ20μmのハンダキャップ(Sn2.5Ag)を設け、ICチップのバンプの高さ(H)を70μmとし、第1の絶縁性接着剤層の厚さ(Tf)を50μmとし、第2の絶縁性接着剤層の厚さ(Tn)を25μmとした以外は、実施例1と同様にして接続構造体のテストピースを作成した。
比較例1では、ICチップのバンプの高さ(H)を30μmとし、第1の絶縁性接着剤層の厚さ(Tf)を20μmとし、第2の絶縁性接着剤層の厚さ(Tn)を5μmとした以外は、実施例1と同様にして接続構造体のテストピースを作成した。
比較例2では、ICチップのバンプの高さ(H)を30μmとし、第1の絶縁性接着剤層の厚さ(Tf)を13μmとし、第2の絶縁性接着剤層の厚さ(Tn)を20μmとした以外は、実施例1と同様にして接続構造体のテストピースを作成した。
比較例3では、ICチップのバンプの高さ(H)を30μmとし、第1の絶縁性接着剤層の厚さ(Tf)を35μmとし、第2の絶縁性接着剤層の厚さ(Tn)を5μmとした以外は、実施例1と同様にして接続構造体のテストピースを作成した。
絶縁性接着フィルムをロールラミネータにより、フィラーを含有しない第2の絶縁性接着剤層がウェハに接着するように貼付した以外は、実施例2と同様にして接続構造体のテストピースを作成した。
絶縁性接着フィルムが、厚さ(Tf)45μmの、フィラーを含有する第1の絶縁性接着剤層のみからなる以外は、実施例2と同様にして接続構造体のテストピースを作成した。
絶縁性接着フィルムが、厚さ(Tn)45μmの、フィラーを含有しない第2の絶縁性接着剤層のみからなる以外は、実施例2と同様にして接続構造体のテストピースを作成した。
実施例1~3、比較例1~6の接続構造体のテストピースの断面を研磨し、断面の状態を超音波映像装置(SAT)にて観察した。ボイドが発生しているか否か、バンプと電極パットとの間にフィラーの噛み込みがあるか否かを評価した。評価結果を[表1]に示す。なお、[表1]において、ボイドの発生、バンプと電極パットとの間におけるフィラーの噛み込みの何れも発生していないものを「良好」として示している。
実施例1~3、比較例1~6の接続構造体について、60℃/60%RHの環境で120時間吸湿した後、265℃をピーク湿度とするリフローを3回行い、-40℃~125℃の温度サイクルを1000サイクル行う信頼性試験を行った。この信頼性試験後、超音波映像装置(SAT)にて観察を行い、ボイドが発生しているか否かを評価した。評価結果を[表1]に示す。なお、[表1]において、ボイドが発生していないものを「良好」として示している。
実施例1~3、比較例1~6の接続構造体について、初期の導通抵抗を測定した。また、60℃/60%RHの環境で120時間吸湿した後、265℃をピーク湿度とするリフローを3回行い、-40℃~125℃の温度サイクルを1000サイクル行う信頼性試験を行い、この信頼性試験後に導通抵抗を測定した。初期の導通抵抗値に対する信頼性試験後の導通抵抗値の上昇率が10%未満であるものを良好(○)として評価し、10%以上であるものを不良(×)として評価した。評価結果を[表1]に示す。
Claims (10)
- 基板の電極が形成された面と、電子部品の電極が形成された面とを絶縁性接着部材を介して接続する接続方法において、
前記絶縁性接着部材は、絶縁性接着剤組成物にフィラーを含有する第1の絶縁性接着剤層と、絶縁性接着剤組成物にフィラーを含有しない第2の絶縁性接着剤層とが積層されてなり、
前記電子部品の電極の高さH、前記第1の絶縁性接着剤層の厚さTf、前記第2の絶縁性接着剤層の厚さTnにおいて、
H/2<Tf<H≦Tf+Tn
を満たし、
前記第1の絶縁性接着剤層と前記電子部品の電極が形成された面とが対峙するように配置された前記絶縁性接着部材を介して、前記基板の電極が形成された面と前記電子部品の電極が形成された面とを接続し、該基板の電極と該電子部品の電極とを接続する接続方法。 - 前記絶縁性接着部材は、予め前記電子部品の電極が形成された面に貼付されている請求項1記載の接続方法。
- 前記電子部品の電極の高さは、5μm~70μmである請求項1又は2記載の接続方法。
- 前記第1、第2の絶縁性接着剤層における絶縁性接着剤組成物は、エポキシ樹脂を含有する請求項1乃至3の何れか1項記載の接続方法。
- 前記電子部品の電極は、銅ピラーと、該銅ピラーの先端に設けられたバンダキャップとからなるバンプである請求項1乃至4の何れか1項記載の接続方法。
- 電子部品の電極が形成された面に絶縁性接着部材が貼付されてなる接着部材付電子部品において、
前記絶縁性接着部材は、絶縁性接着剤組成物にフィラーを含有する第1の絶縁性接着剤層と、絶縁性接着剤組成物にフィラーを含有しない第2の絶縁性接着剤層とが積層されてなり、前記第1の絶縁性接着剤層が前記電子部品の電極と対峙するように前記電子部品の電極が形成された面に貼付されており、
前記電子部品の電極の高さH、前記第1の絶縁性接着剤層の厚さTf、前記第2の絶縁性接着剤層の厚さTnにおいて、
H/2<Tf<H≦Tf+Tn
を満たす接着部材付電子部品。 - 前記第2の絶縁性接着剤層の前記第1の絶縁性接着剤層が形成された面とは反対側の面上には、剥離基材が設けられている請求項6記載の接着部材付電子部品。
- 電子部品の電極が形成された面に絶縁性接着部材が貼付されてなる接着部材付電子部品の製造方法において、
前記絶縁性接着部材は、絶縁性接着剤組成物にフィラーを含有する第1の絶縁性接着剤層と、絶縁性接着剤組成物にフィラーを含有しない第2の絶縁性接着剤層とが積層されてなり、
前記電子部品の電極の高さH、前記第1の絶縁性接着剤層の厚さTf、前記第2の絶縁性接着剤層の厚さTnにおいて、
H/2<Tf<H≦Tf+Tn
を満たし、
前記第1の絶縁性接着剤層が前記電子部品の電極と対峙するように前記電子部品の電極が形成された面に前記絶縁性接着部材を貼付する接着部材付電子部品の製造方法。 - 基板の電極が形成された面と、電子部品の電極が形成された面とを接続するための絶縁性接着部材において、
絶縁性接着剤組成物にフィラーを含有し、前記電子部品の電極と対峙するように前記電子部品の電極が形成された面に貼付される第1の絶縁性接着剤層と、絶縁性接着剤組成物にフィラーを含有しない第2の絶縁性接着剤層とが積層されてなり、
前記電子部品の電極の高さH、前記第1の絶縁性接着剤層の厚さTf、前記第2の絶縁性接着剤層の厚さTnにおいて、
H/2<Tf<H≦Tf+Tn
を満たす絶縁性接着部材。 - 基板の電極が形成された面と、電子部品の電極が形成された面とを絶縁性接着部材を介して接続する接続方法によって接続されてなる接続構造体において、
前記絶縁性接着部材は、絶縁性接着剤組成物にフィラーを含有する第1の絶縁性接着剤層と、絶縁性接着剤組成物にフィラーを含有しない第2の絶縁性接着剤層とが積層されてなり、
前記電子部品の電極の高さH、前記第1の絶縁性接着剤層の厚さTf、前記第2の絶縁性接着剤層の厚さTnにおいて、
H/2<Tf<H≦Tf+Tn
を満たし、
前記第1の絶縁性接着剤層と前記電子部品の電極が形成された面とが対峙するように配置された前記絶縁性接着部材を介して、前記基板の電極が形成された面と前記電子部品の電極が形成された面とを接続し、該基板の電極と該電子部品の電極とを接続する接続方法によって接続されてなる接続構造体。
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US14/363,067 US9190381B2 (en) | 2011-12-09 | 2012-12-07 | Connection method, connection structure, insulating adhesive member, electronic component having adhesive member, and method for manufacturing same |
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JP5967629B2 (ja) | 2014-11-17 | 2016-08-10 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 回路モジュール及びその製造方法 |
US20160190078A1 (en) * | 2014-12-27 | 2016-06-30 | EoPlex, Limited | Integrated circuit system with carrier construction configuration and method of manufacture thereof |
JP2016134605A (ja) * | 2015-01-22 | 2016-07-25 | 株式会社東芝 | 複合樹脂及び電子デバイス |
JP6476517B2 (ja) | 2015-02-02 | 2019-03-06 | ナミックス株式会社 | フィルム状接着剤、それを用いた半導体装置 |
JP2016184612A (ja) * | 2015-03-25 | 2016-10-20 | 富士通株式会社 | 半導体装置の実装方法 |
US9449912B1 (en) * | 2015-06-11 | 2016-09-20 | Stmicroelectronics Pte Ltd | Integrated circuit (IC) card having an IC module and reduced bond wire stress and method of forming |
DE102015112967A1 (de) * | 2015-08-06 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
KR102446768B1 (ko) * | 2015-12-14 | 2022-09-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
TWI696300B (zh) * | 2016-03-15 | 2020-06-11 | 晶元光電股份有限公司 | 半導體裝置及其製造方法 |
US10325863B2 (en) * | 2017-02-28 | 2019-06-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing same |
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