WO2013069261A1 - 光電変換素子およびその製造方法 - Google Patents
光電変換素子およびその製造方法 Download PDFInfo
- Publication number
- WO2013069261A1 WO2013069261A1 PCT/JP2012/007114 JP2012007114W WO2013069261A1 WO 2013069261 A1 WO2013069261 A1 WO 2013069261A1 JP 2012007114 W JP2012007114 W JP 2012007114W WO 2013069261 A1 WO2013069261 A1 WO 2013069261A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- group
- layer
- electron transport
- transport layer
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 160
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004246 zinc acetate Substances 0.000 claims abstract description 8
- -1 cesium compound Chemical class 0.000 claims description 120
- 125000004432 carbon atom Chemical group C* 0.000 claims description 68
- 125000000217 alkyl group Chemical group 0.000 claims description 45
- 238000000605 extraction Methods 0.000 claims description 37
- 125000003545 alkoxy group Chemical group 0.000 claims description 30
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 230000009467 reduction Effects 0.000 claims description 15
- 150000007942 carboxylates Chemical group 0.000 claims description 13
- 229910052736 halogen Inorganic materials 0.000 claims description 12
- 150000002367 halogens Chemical group 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical group CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 claims description 10
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 10
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 10
- 229910052792 caesium Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 6
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims description 6
- 239000011654 magnesium acetate Substances 0.000 claims description 6
- 235000011285 magnesium acetate Nutrition 0.000 claims description 6
- 229940069446 magnesium acetate Drugs 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 claims description 5
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 claims description 5
- 229910003363 ZnMgO Inorganic materials 0.000 claims description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical class 0.000 claims description 5
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011592 zinc chloride Substances 0.000 claims description 5
- 235000005074 zinc chloride Nutrition 0.000 claims description 5
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 claims description 5
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 4
- 230000005525 hole transport Effects 0.000 abstract description 14
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 abstract description 8
- 229910000024 caesium carbonate Inorganic materials 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 189
- 230000000052 comparative effect Effects 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- 125000000623 heterocyclic group Chemical group 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 125000001424 substituent group Chemical group 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 11
- 125000003118 aryl group Chemical group 0.000 description 11
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 229910003472 fullerene Inorganic materials 0.000 description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 7
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- 125000003342 alkenyl group Chemical group 0.000 description 6
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 125000001624 naphthyl group Chemical group 0.000 description 5
- 125000005328 phosphinyl group Chemical group [PH2](=O)* 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 125000004414 alkyl thio group Chemical group 0.000 description 4
- 125000000304 alkynyl group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 125000004391 aryl sulfonyl group Chemical group 0.000 description 4
- 125000004104 aryloxy group Chemical group 0.000 description 4
- 125000000656 azaniumyl group Chemical group [H][N+]([H])([H])[*] 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 4
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- 229940093475 2-ethoxyethanol Drugs 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 3
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 3
- 125000005194 alkoxycarbonyloxy group Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 3
- 125000005577 anthracene group Chemical group 0.000 description 3
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 3
- 125000005135 aryl sulfinyl group Chemical group 0.000 description 3
- 125000004657 aryl sulfonyl amino group Chemical group 0.000 description 3
- 125000005110 aryl thio group Chemical group 0.000 description 3
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 3
- 150000001602 bicycloalkyls Chemical group 0.000 description 3
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 125000000392 cycloalkenyl group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 125000000717 hydrazino group Chemical group [H]N([*])N([H])[H] 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 125000002883 imidazolyl group Chemical group 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000002971 oxazolyl group Chemical group 0.000 description 3
- 230000033116 oxidation-reduction process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical group C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 3
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical compound C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 235000011056 potassium acetate Nutrition 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 3
- 239000013558 reference substance Substances 0.000 description 3
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 3
- 125000004149 thio group Chemical group *S* 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical group N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 2
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical group C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- UXGVMFHEKMGWMA-UHFFFAOYSA-N 2-benzofuran Chemical group C1=CC=CC2=COC=C21 UXGVMFHEKMGWMA-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 2
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 2
- 125000002252 acyl group Chemical group 0.000 description 2
- 125000004442 acylamino group Chemical group 0.000 description 2
- 125000004423 acyloxy group Chemical group 0.000 description 2
- 125000004466 alkoxycarbonylamino group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000006598 aminocarbonylamino group Chemical group 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 2
- 125000005162 aryl oxy carbonyl amino group Chemical group 0.000 description 2
- 125000005200 aryloxy carbonyloxy group Chemical group 0.000 description 2
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Chemical group 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- CEYLPYBDQDCTPB-UHFFFAOYSA-L butanedioate;lead(2+) Chemical compound [Pb+2].[O-]C(=O)CCC([O-])=O CEYLPYBDQDCTPB-UHFFFAOYSA-L 0.000 description 2
- ZOAIGCHJWKDIPJ-UHFFFAOYSA-M caesium acetate Chemical compound [Cs+].CC([O-])=O ZOAIGCHJWKDIPJ-UHFFFAOYSA-M 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- NLSCHDZTHVNDCP-UHFFFAOYSA-N caesium nitrate Chemical compound [Cs+].[O-][N+]([O-])=O NLSCHDZTHVNDCP-UHFFFAOYSA-N 0.000 description 2
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- QZHPTGXQGDFGEN-UHFFFAOYSA-N chromene Chemical group C1=CC=C2C=C[CH]OC2=C1 QZHPTGXQGDFGEN-UHFFFAOYSA-N 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthene Chemical class C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002429 hydrazines Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000004857 imidazopyridinyl group Chemical group N1C(=NC2=C1C=CC=N2)* 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 125000001041 indolyl group Chemical group 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229940097364 magnesium acetate tetrahydrate Drugs 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- XKPKPGCRSHFTKM-UHFFFAOYSA-L magnesium;diacetate;tetrahydrate Chemical compound O.O.O.O.[Mg+2].CC([O-])=O.CC([O-])=O XKPKPGCRSHFTKM-UHFFFAOYSA-L 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- 125000001791 phenazinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3N=C12)* 0.000 description 2
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 2
- GJSGGHOYGKMUPT-UHFFFAOYSA-N phenoxathiine Chemical group C1=CC=C2OC3=CC=CC=C3SC2=C1 GJSGGHOYGKMUPT-UHFFFAOYSA-N 0.000 description 2
- 238000002186 photoelectron spectrum Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920001088 polycarbazole Polymers 0.000 description 2
- 229920000414 polyfuran Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229960002796 polystyrene sulfonate Drugs 0.000 description 2
- 239000011970 polystyrene sulfonate Substances 0.000 description 2
- 150000004032 porphyrins Chemical class 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- 150000003112 potassium compounds Chemical class 0.000 description 2
- 239000011698 potassium fluoride Substances 0.000 description 2
- 235000003270 potassium fluoride Nutrition 0.000 description 2
- 239000004323 potassium nitrate Substances 0.000 description 2
- 235000010333 potassium nitrate Nutrition 0.000 description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 2
- 229910052939 potassium sulfate Inorganic materials 0.000 description 2
- 235000011151 potassium sulphates Nutrition 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000003373 pyrazinyl group Chemical group 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 2
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Chemical compound [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 description 2
- FOGKDYADEBOSPL-UHFFFAOYSA-M rubidium(1+);acetate Chemical compound [Rb+].CC([O-])=O FOGKDYADEBOSPL-UHFFFAOYSA-M 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000001632 sodium acetate Substances 0.000 description 2
- 235000017281 sodium acetate Nutrition 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 2
- 125000001935 tetracenyl group Chemical group C1(=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C12)* 0.000 description 2
- GVIJJXMXTUZIOD-UHFFFAOYSA-N thianthrene Chemical group C1=CC=C2SC3=CC=CC=C3SC2=C1 GVIJJXMXTUZIOD-UHFFFAOYSA-N 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- 125000005580 triphenylene group Chemical group 0.000 description 2
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 2
- HYZQBNDRDQEWAN-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;manganese(3+) Chemical compound [Mn+3].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O HYZQBNDRDQEWAN-LNTINUHCSA-N 0.000 description 1
- SHWZFQPXYGHRKT-FDGPNNRMSA-N (z)-4-hydroxypent-3-en-2-one;nickel Chemical compound [Ni].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O SHWZFQPXYGHRKT-FDGPNNRMSA-N 0.000 description 1
- MBVAQOHBPXKYMF-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;rhodium Chemical compound [Rh].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O MBVAQOHBPXKYMF-LNTINUHCSA-N 0.000 description 1
- MFWFDRBPQDXFRC-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;vanadium Chemical compound [V].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O MFWFDRBPQDXFRC-LNTINUHCSA-N 0.000 description 1
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- KLFRPGNCEJNEKU-FDGPNNRMSA-L (z)-4-oxopent-2-en-2-olate;platinum(2+) Chemical compound [Pt+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O KLFRPGNCEJNEKU-FDGPNNRMSA-L 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- TXNFKHHYTGEPRL-UHFFFAOYSA-N 1-[4-(trifluoromethylsulfanyl)phenyl]ethanone Chemical compound CC(=O)C1=CC=C(SC(F)(F)F)C=C1 TXNFKHHYTGEPRL-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- XWIYUCRMWCHYJR-UHFFFAOYSA-N 1h-pyrrolo[3,2-b]pyridine Chemical compound C1=CC=C2NC=CC2=N1 XWIYUCRMWCHYJR-UHFFFAOYSA-N 0.000 description 1
- YQTCQNIPQMJNTI-UHFFFAOYSA-N 2,2-dimethylpropan-1-one Chemical group CC(C)(C)[C]=O YQTCQNIPQMJNTI-UHFFFAOYSA-N 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JXPHLUCMHXXHEJ-UHFFFAOYSA-N 2-(aminomethyl)-4-bromoaniline Chemical compound NCC1=CC(Br)=CC=C1N JXPHLUCMHXXHEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- SCVJRXQHFJXZFZ-KVQBGUIXSA-N 2-amino-9-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-3h-purine-6-thione Chemical compound C1=2NC(N)=NC(=S)C=2N=CN1[C@H]1C[C@H](O)[C@@H](CO)O1 SCVJRXQHFJXZFZ-KVQBGUIXSA-N 0.000 description 1
- 125000001340 2-chloroethyl group Chemical group [H]C([H])(Cl)C([H])([H])* 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- 125000002941 2-furyl group Chemical group O1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- 125000000175 2-thienyl group Chemical group S1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- CBHTTYDJRXOHHL-UHFFFAOYSA-N 2h-triazolo[4,5-c]pyridazine Chemical compound N1=NC=CC2=C1N=NN2 CBHTTYDJRXOHHL-UHFFFAOYSA-N 0.000 description 1
- 125000004179 3-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C(Cl)=C1[H] 0.000 description 1
- GLTYOSJSHQJOSU-UHFFFAOYSA-M 3-oxobutanoate;rubidium(1+) Chemical compound [Rb+].CC(=O)CC([O-])=O GLTYOSJSHQJOSU-UHFFFAOYSA-M 0.000 description 1
- GAMYYCRTACQSBR-UHFFFAOYSA-N 4-azabenzimidazole Chemical compound C1=CC=C2NC=NC2=N1 GAMYYCRTACQSBR-UHFFFAOYSA-N 0.000 description 1
- DUFCMRCMPHIFTR-UHFFFAOYSA-N 5-(dimethylsulfamoyl)-2-methylfuran-3-carboxylic acid Chemical compound CN(C)S(=O)(=O)C1=CC(C(O)=O)=C(C)O1 DUFCMRCMPHIFTR-UHFFFAOYSA-N 0.000 description 1
- LCGTWRLJTMHIQZ-UHFFFAOYSA-N 5H-dibenzo[b,f]azepine Chemical compound C1=CC2=CC=CC=C2NC2=CC=CC=C21 LCGTWRLJTMHIQZ-UHFFFAOYSA-N 0.000 description 1
- 150000000660 7-membered heterocyclic compounds Chemical class 0.000 description 1
- OURWKHLDAVYMGO-UHFFFAOYSA-N 7-thiophen-2-ylpyrazolo[1,5-a]pyrimidine-3-carboxylic acid Chemical compound C=1C=NC2=C(C(=O)O)C=NN2C=1C1=CC=CS1 OURWKHLDAVYMGO-UHFFFAOYSA-N 0.000 description 1
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- ATLMFJTZZPOKLC-UHFFFAOYSA-N C70 fullerene Chemical compound C12=C(C3=C4C5=C67)C8=C9C%10=C%11C%12=C%13C(C%14=C%15C%16=%17)=C%18C%19=C%20C%21=C%22C%23=C%24C%21=C%21C(C=%25%26)=C%20C%18=C%12C%26=C%10C8=C4C=%25C%21=C5C%24=C6C(C4=C56)=C%23C5=C5C%22=C%19C%14=C5C=%17C6=C5C6=C4C7=C3C1=C6C1=C5C%16=C3C%15=C%13C%11=C4C9=C2C1=C34 ATLMFJTZZPOKLC-UHFFFAOYSA-N 0.000 description 1
- CBOCVOKPQGJKKJ-UHFFFAOYSA-L Calcium formate Chemical compound [Ca+2].[O-]C=O.[O-]C=O CBOCVOKPQGJKKJ-UHFFFAOYSA-L 0.000 description 1
- BCZXFFBUYPCTSJ-UHFFFAOYSA-L Calcium propionate Chemical compound [Ca+2].CCC([O-])=O.CCC([O-])=O BCZXFFBUYPCTSJ-UHFFFAOYSA-L 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- JGFBQFKZKSSODQ-UHFFFAOYSA-N Isothiocyanatocyclopropane Chemical compound S=C=NC1CC1 JGFBQFKZKSSODQ-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- APLQTTYBCHJFIJ-UHFFFAOYSA-N [Ba].[N+](=O)(O)[O-] Chemical compound [Ba].[N+](=O)(O)[O-] APLQTTYBCHJFIJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 1
- WRYNUJYAXVDTCB-UHFFFAOYSA-M acetyloxymercury Chemical compound CC(=O)O[Hg] WRYNUJYAXVDTCB-UHFFFAOYSA-M 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000003806 alkyl carbonyl amino group Chemical group 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 description 1
- 125000004644 alkyl sulfinyl group Chemical group 0.000 description 1
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 1
- 125000004656 alkyl sulfonylamino group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229940009827 aluminum acetate Drugs 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 125000004658 aryl carbonyl amino group Chemical group 0.000 description 1
- 125000005129 aryl carbonyl group Chemical group 0.000 description 1
- 125000005199 aryl carbonyloxy group Chemical group 0.000 description 1
- CHCFOMQHQIQBLZ-UHFFFAOYSA-N azane;phthalic acid Chemical compound N.N.OC(=O)C1=CC=CC=C1C(O)=O CHCFOMQHQIQBLZ-UHFFFAOYSA-N 0.000 description 1
- HEYGYQDRKHISNT-UHFFFAOYSA-N azane;propanedioic acid Chemical compound N.OC(=O)CC(O)=O HEYGYQDRKHISNT-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 description 1
- 229910001620 barium bromide Inorganic materials 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- 150000001553 barium compounds Chemical class 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 description 1
- 229910001638 barium iodide Inorganic materials 0.000 description 1
- 229940075444 barium iodide Drugs 0.000 description 1
- GXUARMXARIJAFV-UHFFFAOYSA-L barium oxalate Chemical compound [Ba+2].[O-]C(=O)C([O-])=O GXUARMXARIJAFV-UHFFFAOYSA-L 0.000 description 1
- 229940094800 barium oxalate Drugs 0.000 description 1
- DJHZYHWLGNJISM-FDGPNNRMSA-L barium(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ba+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O DJHZYHWLGNJISM-FDGPNNRMSA-L 0.000 description 1
- HFAQXXPQBRIXGD-UHFFFAOYSA-L barium(2+);butanedioate Chemical compound [Ba+2].[O-]C(=O)CCC([O-])=O HFAQXXPQBRIXGD-UHFFFAOYSA-L 0.000 description 1
- AESMDVCWMVZFRQ-UHFFFAOYSA-L barium(2+);butanoate Chemical compound [Ba+2].CCCC([O-])=O.CCCC([O-])=O AESMDVCWMVZFRQ-UHFFFAOYSA-L 0.000 description 1
- UXFOSWFWQAUFFZ-UHFFFAOYSA-L barium(2+);diformate Chemical compound [Ba+2].[O-]C=O.[O-]C=O UXFOSWFWQAUFFZ-UHFFFAOYSA-L 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- VURCKCQSFXPUBR-UHFFFAOYSA-L barium(2+);pentanedioate Chemical compound [Ba+2].[O-]C(=O)CCCC([O-])=O VURCKCQSFXPUBR-UHFFFAOYSA-L 0.000 description 1
- MTZOKGSUOABQEO-UHFFFAOYSA-L barium(2+);phthalate Chemical compound [Ba+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O MTZOKGSUOABQEO-UHFFFAOYSA-L 0.000 description 1
- NINLDBMTAAKRTR-UHFFFAOYSA-L barium(2+);propanedioate Chemical compound [Ba+2].[O-]C(=O)CC([O-])=O NINLDBMTAAKRTR-UHFFFAOYSA-L 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- XSCHRSMBECNVNS-UHFFFAOYSA-N benzopyrazine Natural products N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 125000005620 boronic acid group Chemical group 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- UNRVMLDKEXPNDG-UHFFFAOYSA-N butanedioic acid;manganese Chemical compound [Mn].OC(=O)CCC(O)=O UNRVMLDKEXPNDG-UHFFFAOYSA-N 0.000 description 1
- OATWBNIWOJXKAN-UHFFFAOYSA-N butanedioic acid;nickel Chemical compound [Ni].OC(=O)CCC(O)=O OATWBNIWOJXKAN-UHFFFAOYSA-N 0.000 description 1
- ZFBGUXUJXUFOLU-UHFFFAOYSA-L butanoate;lead(2+) Chemical compound [Pb+2].CCCC([O-])=O.CCCC([O-])=O ZFBGUXUJXUFOLU-UHFFFAOYSA-L 0.000 description 1
- BLMXJJXSWRYMCS-UHFFFAOYSA-L butanoate;manganese(2+) Chemical compound [Mn+2].CCCC([O-])=O.CCCC([O-])=O BLMXJJXSWRYMCS-UHFFFAOYSA-L 0.000 description 1
- WRYKSRBKXBMZNY-UHFFFAOYSA-L butanoate;nickel(2+) Chemical compound [Ni+2].CCCC([O-])=O.CCCC([O-])=O WRYKSRBKXBMZNY-UHFFFAOYSA-L 0.000 description 1
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 description 1
- FQRWAZOLUJHNDT-UHFFFAOYSA-N c12c3c4c5c6c7c8c9c%10c%11c%12c%13c%14c%15c%16c%17c(c1c1c4c7c%10c%13c%161)c1c2c2c4c7c%10c%13c%16c%18c%19c%20c%21c%22c%23c%24c%25c%26c%27c%28c%29c(c7c7c%13c%19c%22c%25c%287)c4c1c1c%17c%15c(c%27c%291)c1c%14c%12c(c%24c%261)c1c%11c9c(c%21c%231)c1c8c6c(c%18c%201)c1c5c3c2c%10c%161 Chemical compound c12c3c4c5c6c7c8c9c%10c%11c%12c%13c%14c%15c%16c%17c(c1c1c4c7c%10c%13c%161)c1c2c2c4c7c%10c%13c%16c%18c%19c%20c%21c%22c%23c%24c%25c%26c%27c%28c%29c(c7c7c%13c%19c%22c%25c%287)c4c1c1c%17c%15c(c%27c%291)c1c%14c%12c(c%24c%261)c1c%11c9c(c%21c%231)c1c8c6c(c%18c%201)c1c5c3c2c%10c%161 FQRWAZOLUJHNDT-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- ATZQZZAXOPPAAQ-UHFFFAOYSA-M caesium formate Chemical compound [Cs+].[O-]C=O ATZQZZAXOPPAAQ-UHFFFAOYSA-M 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 239000004281 calcium formate Substances 0.000 description 1
- 235000019255 calcium formate Nutrition 0.000 description 1
- 229940044172 calcium formate Drugs 0.000 description 1
- QXDMQSPYEZFLGF-UHFFFAOYSA-L calcium oxalate Chemical compound [Ca+2].[O-]C(=O)C([O-])=O QXDMQSPYEZFLGF-UHFFFAOYSA-L 0.000 description 1
- PBUBJNYXWIDFMU-UHFFFAOYSA-L calcium;butanedioate Chemical compound [Ca+2].[O-]C(=O)CCC([O-])=O PBUBJNYXWIDFMU-UHFFFAOYSA-L 0.000 description 1
- FYPVXEILSNEKOO-UHFFFAOYSA-L calcium;butanoate Chemical compound [Ca+2].CCCC([O-])=O.CCCC([O-])=O FYPVXEILSNEKOO-UHFFFAOYSA-L 0.000 description 1
- GDVONGDJHUZLDB-UHFFFAOYSA-L calcium;pentanedioate Chemical compound [Ca+2].[O-]C(=O)CCCC([O-])=O GDVONGDJHUZLDB-UHFFFAOYSA-L 0.000 description 1
- PYSZASIZWHHPHJ-UHFFFAOYSA-L calcium;phthalate Chemical compound [Ca+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O PYSZASIZWHHPHJ-UHFFFAOYSA-L 0.000 description 1
- MLMODXBPCNLAGP-UHFFFAOYSA-L calcium;propanedioate Chemical compound [Ca+2].[O-]C(=O)CC([O-])=O MLMODXBPCNLAGP-UHFFFAOYSA-L 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 1
- 125000005708 carbonyloxy group Chemical group [*:2]OC([*:1])=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- WYYQVWLEPYFFLP-UHFFFAOYSA-K chromium(3+);triacetate Chemical compound [Cr+3].CC([O-])=O.CC([O-])=O.CC([O-])=O WYYQVWLEPYFFLP-UHFFFAOYSA-K 0.000 description 1
- WCZVZNOTHYJIEI-UHFFFAOYSA-N cinnoline Chemical compound N1=NC=CC2=CC=CC=C21 WCZVZNOTHYJIEI-UHFFFAOYSA-N 0.000 description 1
- 229940011182 cobalt acetate Drugs 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
- FJDJVBXSSLDNJB-LNTINUHCSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FJDJVBXSSLDNJB-LNTINUHCSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- SMRRYUGQTFYZGD-UHFFFAOYSA-K diacetyloxythallanyl acetate Chemical compound [Tl+3].CC([O-])=O.CC([O-])=O.CC([O-])=O SMRRYUGQTFYZGD-UHFFFAOYSA-K 0.000 description 1
- OKUGAOMPLZNWRT-UHFFFAOYSA-N diazanium;pentanedioate Chemical compound [NH4+].[NH4+].[O-]C(=O)CCCC([O-])=O OKUGAOMPLZNWRT-UHFFFAOYSA-N 0.000 description 1
- FRRMMWJCHSFNSG-UHFFFAOYSA-N diazanium;propanedioate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC([O-])=O FRRMMWJCHSFNSG-UHFFFAOYSA-N 0.000 description 1
- YNQRWVCLAIUHHI-UHFFFAOYSA-L dilithium;oxalate Chemical compound [Li+].[Li+].[O-]C(=O)C([O-])=O YNQRWVCLAIUHHI-UHFFFAOYSA-L 0.000 description 1
- PLYZFCVUMQOYCR-UHFFFAOYSA-L dilithium;pentanedioate Chemical compound [Li+].[Li+].[O-]C(=O)CCCC([O-])=O PLYZFCVUMQOYCR-UHFFFAOYSA-L 0.000 description 1
- VNSVQJIXVXZDJF-UHFFFAOYSA-L dilithium;phthalate Chemical compound [Li+].[Li+].[O-]C(=O)C1=CC=CC=C1C([O-])=O VNSVQJIXVXZDJF-UHFFFAOYSA-L 0.000 description 1
- CVOQYKPWIVSMDC-UHFFFAOYSA-L dipotassium;butanedioate Chemical compound [K+].[K+].[O-]C(=O)CCC([O-])=O CVOQYKPWIVSMDC-UHFFFAOYSA-L 0.000 description 1
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 description 1
- FLAYZGYYOSGYDY-UHFFFAOYSA-L dipotassium;pentanedioate Chemical compound [K+].[K+].[O-]C(=O)CCCC([O-])=O FLAYZGYYOSGYDY-UHFFFAOYSA-L 0.000 description 1
- GOMCKELMLXHYHH-UHFFFAOYSA-L dipotassium;phthalate Chemical compound [K+].[K+].[O-]C(=O)C1=CC=CC=C1C([O-])=O GOMCKELMLXHYHH-UHFFFAOYSA-L 0.000 description 1
- HCDITHVDEPPNIL-UHFFFAOYSA-L dipotassium;propanedioate Chemical compound [K+].[K+].[O-]C(=O)CC([O-])=O HCDITHVDEPPNIL-UHFFFAOYSA-L 0.000 description 1
- ZUDYLZOBWIAUPC-UHFFFAOYSA-L disodium;pentanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CCCC([O-])=O ZUDYLZOBWIAUPC-UHFFFAOYSA-L 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FGQSJRDKBCVFHH-UHFFFAOYSA-N erbium(3+) pentane-2,4-dione Chemical compound [Er+3].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O FGQSJRDKBCVFHH-UHFFFAOYSA-N 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- 125000006125 ethylsulfonyl group Chemical group 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- AKYVEELUVDHHLT-UHFFFAOYSA-K europium acetylacetonate Chemical compound [Eu+3].CC([O-])=CC(C)=O.CC([O-])=CC(C)=O.CC([O-])=CC(C)=O AKYVEELUVDHHLT-UHFFFAOYSA-K 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229940044170 formate Drugs 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- UESISTHQAYQMRA-UHFFFAOYSA-M formyloxythallium Chemical compound [Tl+].[O-]C=O UESISTHQAYQMRA-UHFFFAOYSA-M 0.000 description 1
- IQGAADOKZGEEQE-LNTINUHCSA-K gadolinium acetylacetonate Chemical compound [Gd+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O IQGAADOKZGEEQE-LNTINUHCSA-K 0.000 description 1
- 125000002350 geranyl group Chemical group [H]C([*])([H])/C([H])=C(C([H])([H])[H])/C([H])([H])C([H])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000003406 indolizinyl group Chemical group C=1(C=CN2C=CC=CC12)* 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- HLYTZTFNIRBLNA-LNTINUHCSA-K iridium(3+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ir+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O HLYTZTFNIRBLNA-LNTINUHCSA-K 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PVFSDGKDKFSOTB-UHFFFAOYSA-K iron(3+);triacetate Chemical compound [Fe+3].CC([O-])=O.CC([O-])=O.CC([O-])=O PVFSDGKDKFSOTB-UHFFFAOYSA-K 0.000 description 1
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- QTWJUFWTDYVHOM-UHFFFAOYSA-L lead(2+) propanedioate Chemical compound [Pb+2].[O-]C(=O)CC([O-])=O QTWJUFWTDYVHOM-UHFFFAOYSA-L 0.000 description 1
- YJOMWQQKPKLUBO-UHFFFAOYSA-L lead(2+);phthalate Chemical compound [Pb+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O YJOMWQQKPKLUBO-UHFFFAOYSA-L 0.000 description 1
- FYDIWJWWROEQCB-UHFFFAOYSA-L lead(2+);propanoate Chemical compound [Pb+2].CCC([O-])=O.CCC([O-])=O FYDIWJWWROEQCB-UHFFFAOYSA-L 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
- 229940071257 lithium acetate Drugs 0.000 description 1
- WAHQBNXSPALNEA-UHFFFAOYSA-L lithium succinate Chemical compound [Li+].[Li+].[O-]C(=O)CCC([O-])=O WAHQBNXSPALNEA-UHFFFAOYSA-L 0.000 description 1
- 229960004254 lithium succinate Drugs 0.000 description 1
- WIAVVDGWLCNNGT-UHFFFAOYSA-M lithium;butanoate Chemical compound [Li+].CCCC([O-])=O WIAVVDGWLCNNGT-UHFFFAOYSA-M 0.000 description 1
- XKPJKVVZOOEMPK-UHFFFAOYSA-M lithium;formate Chemical compound [Li+].[O-]C=O XKPJKVVZOOEMPK-UHFFFAOYSA-M 0.000 description 1
- DXUUIDJNCBRHDV-UHFFFAOYSA-M lithium;hydron;oxalate Chemical compound [Li+].OC(=O)C([O-])=O DXUUIDJNCBRHDV-UHFFFAOYSA-M 0.000 description 1
- OMAQJPSQYYDOKO-UHFFFAOYSA-M lithium;hydron;propanedioate Chemical compound [H+].[Li+].[O-]C(=O)CC([O-])=O OMAQJPSQYYDOKO-UHFFFAOYSA-M 0.000 description 1
- RDURKEQPWGIVCS-UHFFFAOYSA-N lithium;propanedioic acid Chemical compound [Li].OC(=O)CC(O)=O RDURKEQPWGIVCS-UHFFFAOYSA-N 0.000 description 1
- AXMOZGKEVIBBCF-UHFFFAOYSA-M lithium;propanoate Chemical compound [Li+].CCC([O-])=O AXMOZGKEVIBBCF-UHFFFAOYSA-M 0.000 description 1
- 125000003588 lysine group Chemical group [H]N([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(N([H])[H])C(*)=O 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 150000002681 magnesium compounds Chemical class 0.000 description 1
- CQQJGTPWCKCEOQ-UHFFFAOYSA-L magnesium dipropionate Chemical compound [Mg+2].CCC([O-])=O.CCC([O-])=O CQQJGTPWCKCEOQ-UHFFFAOYSA-L 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 229910001641 magnesium iodide Inorganic materials 0.000 description 1
- UHNWOJJPXCYKCG-UHFFFAOYSA-L magnesium oxalate Chemical compound [Mg+2].[O-]C(=O)C([O-])=O UHNWOJJPXCYKCG-UHFFFAOYSA-L 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AKTIAGQCYPCKFX-FDGPNNRMSA-L magnesium;(z)-4-oxopent-2-en-2-olate Chemical compound [Mg+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AKTIAGQCYPCKFX-FDGPNNRMSA-L 0.000 description 1
- GMDNUWQNDQDBNQ-UHFFFAOYSA-L magnesium;diformate Chemical compound [Mg+2].[O-]C=O.[O-]C=O GMDNUWQNDQDBNQ-UHFFFAOYSA-L 0.000 description 1
- NKBDSFGVUTVKAD-UHFFFAOYSA-L magnesium;pentanedioate Chemical compound [Mg+2].[O-]C(=O)CCCC([O-])=O NKBDSFGVUTVKAD-UHFFFAOYSA-L 0.000 description 1
- APLYTANMTDCWTA-UHFFFAOYSA-L magnesium;phthalate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O APLYTANMTDCWTA-UHFFFAOYSA-L 0.000 description 1
- AICDYVDWYUUUGL-UHFFFAOYSA-L magnesium;propanedioate Chemical compound [Mg+2].[O-]C(=O)CC([O-])=O AICDYVDWYUUUGL-UHFFFAOYSA-L 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- BHVPEUGTPDJECS-UHFFFAOYSA-L manganese(2+);diformate Chemical compound [Mn+2].[O-]C=O.[O-]C=O BHVPEUGTPDJECS-UHFFFAOYSA-L 0.000 description 1
- RGVLTEMOWXGQOS-UHFFFAOYSA-L manganese(2+);oxalate Chemical compound [Mn+2].[O-]C(=O)C([O-])=O RGVLTEMOWXGQOS-UHFFFAOYSA-L 0.000 description 1
- VZTJFWPCNVIPHN-UHFFFAOYSA-L manganese(2+);pentanedioate Chemical compound [Mn+2].[O-]C(=O)CCCC([O-])=O VZTJFWPCNVIPHN-UHFFFAOYSA-L 0.000 description 1
- ZGIHUCQOMWIMKH-UHFFFAOYSA-L manganese(2+);propanoate Chemical compound [Mn+2].CCC([O-])=O.CCC([O-])=O ZGIHUCQOMWIMKH-UHFFFAOYSA-L 0.000 description 1
- YZDKJTBRCYOBDE-UHFFFAOYSA-N manganese;propanedioic acid Chemical compound [Mn].OC(=O)CC(O)=O YZDKJTBRCYOBDE-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
- 125000006216 methylsulfinyl group Chemical group [H]C([H])([H])S(*)=O 0.000 description 1
- 125000004170 methylsulfonyl group Chemical group [H]C([H])([H])S(*)(=O)=O 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- TXCOQXKFOPSCPZ-UHFFFAOYSA-J molybdenum(4+);tetraacetate Chemical compound [Mo+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O TXCOQXKFOPSCPZ-UHFFFAOYSA-J 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- HZPNKQREYVVATQ-UHFFFAOYSA-L nickel(2+);diformate Chemical compound [Ni+2].[O-]C=O.[O-]C=O HZPNKQREYVVATQ-UHFFFAOYSA-L 0.000 description 1
- DOLZKNFSRCEOFV-UHFFFAOYSA-L nickel(2+);oxalate Chemical compound [Ni+2].[O-]C(=O)C([O-])=O DOLZKNFSRCEOFV-UHFFFAOYSA-L 0.000 description 1
- IOYUNCMNNUDMOJ-UHFFFAOYSA-N nickel;pentanedioic acid Chemical compound [Ni].OC(=O)CCCC(O)=O IOYUNCMNNUDMOJ-UHFFFAOYSA-N 0.000 description 1
- YOQIGCBZXAYLBT-UHFFFAOYSA-N nickel;phthalic acid Chemical compound [Ni].OC(=O)C1=CC=CC=C1C(O)=O YOQIGCBZXAYLBT-UHFFFAOYSA-N 0.000 description 1
- GBIHADTXLFMYDT-UHFFFAOYSA-N nickel;propanedioic acid Chemical compound [Ni].OC(=O)CC(O)=O GBIHADTXLFMYDT-UHFFFAOYSA-N 0.000 description 1
- NAVSKFYJNZQECG-UHFFFAOYSA-N nickel;propanoic acid Chemical compound [Ni].CCC(O)=O NAVSKFYJNZQECG-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 125000001117 oleyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])/C([H])=C([H])\C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 229940039748 oxalate Drugs 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- ZVSLRJWQDNRUDU-UHFFFAOYSA-L palladium(2+);propanoate Chemical compound [Pd+2].CCC([O-])=O.CCC([O-])=O ZVSLRJWQDNRUDU-UHFFFAOYSA-L 0.000 description 1
- JKDRQYIYVJVOPF-FDGPNNRMSA-L palladium(ii) acetylacetonate Chemical compound [Pd+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O JKDRQYIYVJVOPF-FDGPNNRMSA-L 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- SCRKTTJILRGIEY-UHFFFAOYSA-N pentanedioic acid;zinc Chemical compound [Zn].OC(=O)CCCC(O)=O SCRKTTJILRGIEY-UHFFFAOYSA-N 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical group C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 1
- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- 125000001476 phosphono group Chemical group [H]OP(*)(=O)O[H] 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- DFLCZDIXTAAMLZ-UHFFFAOYSA-N phthalic acid;sodium Chemical compound [Na].OC(=O)C1=CC=CC=C1C(O)=O DFLCZDIXTAAMLZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000867 polyelectrolyte Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229960004109 potassium acetate Drugs 0.000 description 1
- WFIZEGIEIOHZCP-UHFFFAOYSA-M potassium formate Chemical compound [K+].[O-]C=O WFIZEGIEIOHZCP-UHFFFAOYSA-M 0.000 description 1
- JMTCDHVHZSGGJA-UHFFFAOYSA-M potassium hydrogenoxalate Chemical compound [K+].OC(=O)C([O-])=O JMTCDHVHZSGGJA-UHFFFAOYSA-M 0.000 description 1
- BWILYWWHXDGKQA-UHFFFAOYSA-M potassium propanoate Chemical compound [K+].CCC([O-])=O BWILYWWHXDGKQA-UHFFFAOYSA-M 0.000 description 1
- 239000004331 potassium propionate Substances 0.000 description 1
- 235000010332 potassium propionate Nutrition 0.000 description 1
- RWMKSKOZLCXHOK-UHFFFAOYSA-M potassium;butanoate Chemical compound [K+].CCCC([O-])=O RWMKSKOZLCXHOK-UHFFFAOYSA-M 0.000 description 1
- LBYLQJKRTJQVDQ-UHFFFAOYSA-M potassium;hydron;propanedioate Chemical compound [K+].OC(=O)CC([O-])=O LBYLQJKRTJQVDQ-UHFFFAOYSA-M 0.000 description 1
- 125000001844 prenyl group Chemical group [H]C([*])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- TVOIPJPTFTYKQM-UHFFFAOYSA-N propanedioic acid;zinc Chemical compound [Zn].OC(=O)CC(O)=O TVOIPJPTFTYKQM-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- CPNGPNLZQNNVQM-UHFFFAOYSA-N pteridine Chemical compound N1=CN=CC2=NC=CN=C21 CPNGPNLZQNNVQM-UHFFFAOYSA-N 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000000246 pyrimidin-2-yl group Chemical group [H]C1=NC(*)=NC([H])=C1[H] 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- SVOOVMQUISJERI-UHFFFAOYSA-K rhodium(3+);triacetate Chemical compound [Rh+3].CC([O-])=O.CC([O-])=O.CC([O-])=O SVOOVMQUISJERI-UHFFFAOYSA-K 0.000 description 1
- WPFGFHJALYCVMO-UHFFFAOYSA-L rubidium carbonate Chemical compound [Rb+].[Rb+].[O-]C([O-])=O WPFGFHJALYCVMO-UHFFFAOYSA-L 0.000 description 1
- 229910000026 rubidium carbonate Inorganic materials 0.000 description 1
- 229940102127 rubidium chloride Drugs 0.000 description 1
- 150000003298 rubidium compounds Chemical class 0.000 description 1
- RTHYXYOJKHGZJT-UHFFFAOYSA-N rubidium nitrate Inorganic materials [Rb+].[O-][N+]([O-])=O RTHYXYOJKHGZJT-UHFFFAOYSA-N 0.000 description 1
- 229910000344 rubidium sulfate Inorganic materials 0.000 description 1
- ZIMBPNXOLRMVGV-UHFFFAOYSA-M rubidium(1+);formate Chemical compound [Rb+].[O-]C=O ZIMBPNXOLRMVGV-UHFFFAOYSA-M 0.000 description 1
- GANPIEKBSASAOC-UHFFFAOYSA-L rubidium(1+);sulfate Chemical compound [Rb+].[Rb+].[O-]S([O-])(=O)=O GANPIEKBSASAOC-UHFFFAOYSA-L 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- CHACQUSVOVNARW-LNKPDPKZSA-M silver;(z)-4-oxopent-2-en-2-olate Chemical compound [Ag+].C\C([O-])=C\C(C)=O CHACQUSVOVNARW-LNKPDPKZSA-M 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229960004249 sodium acetate Drugs 0.000 description 1
- MFBOGIVSZKQAPD-UHFFFAOYSA-M sodium butyrate Chemical compound [Na+].CCCC([O-])=O MFBOGIVSZKQAPD-UHFFFAOYSA-M 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- PRWXGRGLHYDWPS-UHFFFAOYSA-L sodium malonate Chemical compound [Na+].[Na+].[O-]C(=O)CC([O-])=O PRWXGRGLHYDWPS-UHFFFAOYSA-L 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 description 1
- 229940039790 sodium oxalate Drugs 0.000 description 1
- JXKPEJDQGNYQSM-UHFFFAOYSA-M sodium propionate Chemical compound [Na+].CCC([O-])=O JXKPEJDQGNYQSM-UHFFFAOYSA-M 0.000 description 1
- 239000004324 sodium propionate Substances 0.000 description 1
- 235000010334 sodium propionate Nutrition 0.000 description 1
- 229960003212 sodium propionate Drugs 0.000 description 1
- 229940074404 sodium succinate Drugs 0.000 description 1
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical compound [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- AIWZOHBYSFSQGV-LNKPDPKZSA-M sodium;(z)-4-oxopent-2-en-2-olate Chemical compound [Na+].C\C([O-])=C\C(C)=O AIWZOHBYSFSQGV-LNKPDPKZSA-M 0.000 description 1
- UJRAXLUXHBUNDO-UHFFFAOYSA-M sodium;hydron;oxalate Chemical compound [Na+].OC(=O)C([O-])=O UJRAXLUXHBUNDO-UHFFFAOYSA-M 0.000 description 1
- LXWZLYDXYCQRJT-UHFFFAOYSA-M sodium;hydron;propanedioate Chemical compound [H+].[Na+].[O-]C(=O)CC([O-])=O LXWZLYDXYCQRJT-UHFFFAOYSA-M 0.000 description 1
- 125000003696 stearoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 description 1
- 229910001625 strontium bromide Inorganic materials 0.000 description 1
- 229940074155 strontium bromide Drugs 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- 150000003438 strontium compounds Chemical class 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 description 1
- 229910001643 strontium iodide Inorganic materials 0.000 description 1
- KQAGKTURZUKUCH-UHFFFAOYSA-L strontium oxalate Chemical compound [Sr+2].[O-]C(=O)C([O-])=O KQAGKTURZUKUCH-UHFFFAOYSA-L 0.000 description 1
- UMBFGWVRZIHXCK-FDGPNNRMSA-L strontium;(z)-4-oxopent-2-en-2-olate Chemical compound [Sr+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O UMBFGWVRZIHXCK-FDGPNNRMSA-L 0.000 description 1
- CRLDSNGPLRRUQU-UHFFFAOYSA-L strontium;butanedioate Chemical compound [Sr+2].[O-]C(=O)CCC([O-])=O CRLDSNGPLRRUQU-UHFFFAOYSA-L 0.000 description 1
- ITUCOQTVTSFGRJ-UHFFFAOYSA-L strontium;butanoate Chemical compound [Sr+2].CCCC([O-])=O.CCCC([O-])=O ITUCOQTVTSFGRJ-UHFFFAOYSA-L 0.000 description 1
- FXWRHZACHXRMCI-UHFFFAOYSA-L strontium;diformate Chemical compound [Sr+2].[O-]C=O.[O-]C=O FXWRHZACHXRMCI-UHFFFAOYSA-L 0.000 description 1
- AYNNBBQUOJKZJU-UHFFFAOYSA-L strontium;pentanedioate Chemical compound [Sr+2].[O-]C(=O)CCCC([O-])=O AYNNBBQUOJKZJU-UHFFFAOYSA-L 0.000 description 1
- KGCOMQDJRDGWDD-UHFFFAOYSA-L strontium;phthalate Chemical compound [Sr+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O KGCOMQDJRDGWDD-UHFFFAOYSA-L 0.000 description 1
- LVZZABGEQTZXHP-UHFFFAOYSA-L strontium;propanedioate Chemical compound [Sr+2].[O-]C(=O)CC([O-])=O LVZZABGEQTZXHP-UHFFFAOYSA-L 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- OKUCEQDKBKYEJY-UHFFFAOYSA-N tert-butyl 3-(methylamino)pyrrolidine-1-carboxylate Chemical compound CNC1CCN(C(=O)OC(C)(C)C)C1 OKUCEQDKBKYEJY-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical compound C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- WEQHQGJDZLDFID-UHFFFAOYSA-J thorium(iv) chloride Chemical compound Cl[Th](Cl)(Cl)Cl WEQHQGJDZLDFID-UHFFFAOYSA-J 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YWBFPKPWMSWWEA-UHFFFAOYSA-O triazolopyrimidine Chemical compound BrC1=CC=CC(C=2N=C3N=CN[N+]3=C(NCC=3C=CN=CC=3)C=2)=C1 YWBFPKPWMSWWEA-UHFFFAOYSA-O 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- KHAUBYTYGDOYRU-IRXASZMISA-N trospectomycin Chemical compound CN[C@H]([C@H]1O2)[C@@H](O)[C@@H](NC)[C@H](O)[C@H]1O[C@H]1[C@]2(O)C(=O)C[C@@H](CCCC)O1 KHAUBYTYGDOYRU-IRXASZMISA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- SRWMQSFFRFWREA-UHFFFAOYSA-M zinc formate Chemical compound [Zn+2].[O-]C=O SRWMQSFFRFWREA-UHFFFAOYSA-M 0.000 description 1
- AGFGXVAAIXIOFZ-UHFFFAOYSA-L zinc;butanedioate Chemical compound [Zn+2].[O-]C(=O)CCC([O-])=O AGFGXVAAIXIOFZ-UHFFFAOYSA-L 0.000 description 1
- WDHVIZKSFZNHJB-UHFFFAOYSA-L zinc;butanoate Chemical compound [Zn+2].CCCC([O-])=O.CCCC([O-])=O WDHVIZKSFZNHJB-UHFFFAOYSA-L 0.000 description 1
- ZPEJZWGMHAKWNL-UHFFFAOYSA-L zinc;oxalate Chemical compound [Zn+2].[O-]C(=O)C([O-])=O ZPEJZWGMHAKWNL-UHFFFAOYSA-L 0.000 description 1
- UXDZLUCNRYCZCG-UHFFFAOYSA-L zinc;phthalate Chemical compound [Zn+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O UXDZLUCNRYCZCG-UHFFFAOYSA-L 0.000 description 1
- XDWXRAYGALQIFG-UHFFFAOYSA-L zinc;propanoate Chemical compound [Zn+2].CCC([O-])=O.CCC([O-])=O XDWXRAYGALQIFG-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C13/00—Cyclic hydrocarbons containing rings other than, or in addition to, six-membered aromatic rings
- C07C13/28—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof
- C07C13/32—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings
- C07C13/62—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings
- C07C13/64—Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings with a bridged ring system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2604/00—Fullerenes, e.g. C60 buckminsterfullerene or C70
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a photoelectric conversion element that converts light energy into electric energy by photoelectric conversion.
- Organic thin-film solar cells (photoelectric conversion elements) using organic semiconductors are suitable for large areas and mass production, such as roll-to-roll processes, using lightweight and flexible materials such as plastic substrates by simple methods such as printing. Therefore, it is considered a promising next-generation solar cell because it can be expected to expand the application range of solar cells by taking advantage of its low cost, light weight, and flexibility compared to conventional solar cells.
- improvement of photoelectric conversion efficiency is being promoted toward practical application of organic thin film solar cells, and solar cells having a photoelectric conversion efficiency of 8% or more have been developed.
- organic thin-film solar cells are known to deteriorate due to light, heat, atmospheric oxygen and moisture, and it is extremely important to improve the durability of the element for practical use.
- the charge extraction between the electrode and the photoelectric conversion layer It is common to provide a layer.
- Non-patent document 1 discloses a low molecular vapor deposition organic thin-film solar cell in which pentacene and fullerene C60 are combined.
- BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
- phosphine oxide compound is used for the electron extraction layer, which is one of the charge extraction layers
- inorganic compounds such as lithium fluoride (LiF), titania (TiOx), zinc oxide (ZnO), cesium carbonate (Cs 2 CO 3 ) are used (non-patent document) 2-5) have been reported.
- BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
- phosphine oxide compound is one of the charge extraction layers
- inorganic compounds such as lithium fluoride (LiF), titania (TiOx), zinc oxide (ZnO), cesium carbonate (Cs 2 CO 3 )
- BCP as an electron extraction layer of an organic compound material
- Patent Document 1 reports a low molecular vapor deposition organic thin film solar cell using a phosphine oxide compound.
- the photoelectric conversion efficiency is low, and it was necessary to improve the conversion efficiency for practical use.
- Non-Patent Document 2 reports a polymer-coated organic thin film solar cell in which a polymer semiconductor (MEH-PPV) and a fullerene derivative (PCBM) are combined.
- MEH-PPV polymer semiconductor
- PCBM fullerene derivative
- Non-Patent Document 3 reports that a polymer-coated organic thin-film solar cell in which a polymer semiconductor (P3HT) and a fullerene derivative (PCBM) are combined is excellent in durability. However, it only reports the durability with light irradiation in a relatively short time of about 20 hours, and is not practically sufficient.
- Non-Patent Documents 4 and 5 report a polymer-coated organic thin-film solar cell in which a polymer semiconductor (P3HT) and a fullerene derivative (PCBM) are combined. Photoelectric conversion efficiency and durability are insufficient.
- This invention is made
- the objective is to provide the technique which can aim at the improvement of the photoelectric conversion efficiency of the photoelectric conversion element in the state irradiated with sunlight for a long time. .
- An embodiment of the present invention is a photoelectric conversion element.
- the photoelectric conversion element includes at least a photoelectric conversion layer, an electron extraction electrode provided on one main surface side of the photoelectric conversion layer, and a hole extraction provided on the other main surface side of the photoelectric conversion layer.
- An electron extraction layer provided between the electrode and the photoelectric conversion layer and the electron extraction electrode and including at least an electron transport layer, wherein the conduction band lower energy of the electron extraction layer is transmitted to the electron transport layer.
- a conduction band lower end energy adjusting layer for reducing the band lower end energy is provided between the photoelectric conversion layer and the electron transport layer.
- the photoelectric conversion element of this aspect it is possible to improve the photoelectric conversion efficiency in the initial state and to suppress the decrease in the photoelectric conversion efficiency in a state where light irradiation is continued for a long time. Thereby, lifetime improvement of a photoelectric conversion element can be achieved.
- the rate of decrease in photoelectric conversion efficiency is 10%. It may be the following.
- the conduction band bottom energy adjustment layer may include a cesium compound.
- the electron transport layer may contain a substance of the following formula and a reaction product of one or more substances of the following formula.
- M is a metal or alloy selected from the group consisting of alkali metals, alkaline earth metals, 2B and 3B metals, transition metals, X is oxygen, halogen, carboxylate group, alkoxy group, alkyl A is a positive integer that is selected according to the valence of M.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- the electron transport layer may be one or more selected from the group consisting of zinc acetate, magnesium acetate, aluminum acetylacetonate, aluminum chloride, gallium acetylacetonate, gallium chloride, zinc acetylacetonate, zinc chloride, diethylzinc, and ZnMgO. Metal compounds and their reactants may also be included.
- the photoelectric conversion layer may include a fullerene derivative having a first reduction potential of 1160 mV (vs Fc / Fc + ) or higher.
- the fullerene derivative may be ICBA (Indene-C60 bisaddact).
- Another embodiment of the present invention includes a pair of electrodes, a photoelectric conversion layer positioned between the pair of electrodes, an electron transport layer provided between the one electrode and the photoelectric conversion layer, and the photoelectric conversion.
- a method for producing a photoelectric conversion element having a conduction band bottom energy adjustment layer interposed between a layer and the electron transport layer A step of forming a film containing a substance of the following formula (2) by coating and then heating at 100 ° C. or higher and 150 ° C. or lower to form the electron transport layer, and adjusting the conduction band lower end energy containing a cesium compound And a step of forming a layer.
- X is selected from oxygen, halogen, a carboxylate group, an alkoxy group, an alkyl group, and an acetonate group represented by the following formula.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- Still another embodiment of the present invention includes a pair of electrodes, a photoelectric conversion layer positioned between the pair of electrodes, an electron transport layer provided between the one electrode and the photoelectric conversion layer, and the photoelectric conversion layer.
- X is selected from oxygen, halogen, a carboxylate group, an alkoxy group, an alkyl group, and an acetonate group represented by the following formula.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- Mg (X) 2 (1-2) In the above formula (1-2), X is selected from oxygen, halogen, a carboxylate group, an alkoxy group, an alkyl group, and an acetonate group represented by the following formula.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- the present invention it is possible to improve the photoelectric conversion efficiency of the photoelectric conversion element in a state in which sunlight is irradiated for a long time.
- FIG. 6 is a graph showing light resistance in the photoelectric conversion elements of Examples 1 to 3 and Comparative Examples 1 to 6.
- 6 is a graph showing light resistance in photoelectric conversion elements of Examples 4 to 6 and Comparative Examples 7 to 12.
- FIG. 1 is a schematic cross-sectional view illustrating a configuration of a photoelectric conversion element 10 according to an embodiment.
- the photoelectric conversion element 10 of this Embodiment is an organic thin film solar cell which has a photoelectric converting layer containing an organic semiconductor.
- the photoelectric conversion element 10 includes a substrate 20, a first electrode 30, an electron transport layer 40, a conduction band lower end energy adjustment layer 50, a photoelectric conversion layer 60, a hole transport layer 70, and a second electrode 80.
- a layer including at least the electron transport layer 40 and the conduction band bottom energy adjustment layer 50 is referred to as an electron extraction layer 90.
- the first electrode 30 is a negative electrode (electron extraction electrode) and is electrically connected via a photoelectric conversion layer 60 and an electron extraction layer 90 described later.
- the first electrode 30 is located on the light-receiving surface side of the photoelectric conversion layer 60, ITO (Indium Tin Oxide) , SnO 2, FTO (Fluorine doped Tin Oxide), ZnO, AZO (Aluminum doped Zinc Oxide), IZO It is made of a conductive metal oxide such as (Indium doped Zinc Oxide) or a thin metal film such as gold, silver, copper, or aluminum, or a transparent conductive film such as a mesh or stripe.
- the first electrode 30 is formed on the light-transmitting substrate 20 so as not to disturb the light receiving performance.
- the substrate 20 may be colorless or colored glass, meshed glass, glass block, or the like, or may be colorless or colored resin having transparency.
- resins include polyesters such as polyethylene terephthalate, polyamide, polysulfone, polyether sulfone, polyether ether ketone, polyphenylene sulfide, polycarbonate, polyimide, polymethyl methacrylate, polystyrene, cellulose triacetate, and polymethylpentene. Etc.
- the electron extraction layer 90 is provided in a region between the first electrode 30 and the photoelectric conversion layer 60, and includes at least the electron transport layer 40 and the conduction band bottom energy adjustment layer 50.
- the electron transport layer 40 has a function of easily moving electrons from the photoelectric conversion layer 60 to the first electrode 30.
- the electron transport layer 40 may have a function of making it difficult for holes to move from the photoelectric conversion layer 60 to the first electrode 30.
- the thickness of the electron transport layer 40 is not particularly limited, but for example, 10 to 100 nm, preferably 20 to 60 nm is desirable.
- the electron transport layer 40 contains a substance of the following formula and a reaction product of one or more substances of the following formula.
- M is selected from the group consisting of alkali metals, alkaline earth metals, 2B and 3B metals, transition metals, X is halogen, carboxylate group, alkoxy group, alkyl group, and the following formula:
- A is a positive integer determined according to the valence of M.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- the alkyl group include a methyl group, an ethyl group, and a propyl group.
- alkoxy group include a methoxy group and an ethoxy group.
- M include Li, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Rb, Sr, Zr, Mo, and Ru. , Rh, Pd, Ag, Cd, In, Sn, Cs, Ba, La, Ir, Pt, Hg, TI, Pb, Bi, and the like.
- X include halogen ions such as fluorine, chlorine, bromine and iodine, formic acid, acetic acid, propionic acid, butyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, phthalic acid, acrylic acid and methacrylic acid.
- the alkoxy group used for X is not particularly limited, and may be linear or branched having 1 to 10 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, and a propoxy group.
- the alkyl group used for X is not particularly limited, and may be a straight chain or branched chain having 1 to 10 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group.
- the material contained in the electron transport layer 40 is lithium fluoride, lithium chloride, lithium iodide, magnesium chloride, zinc chloride, aluminum chloride, gallium chloride, nickel chloride, gallium chloride, lithium formate, formic acid.
- zinc acetate, magnesium acetate, aluminum acetylacetonate, aluminum chloride, gallium acetylacetonate, gallium chloride, zinc acetylacetonate, zinc chloride, diethylzinc, and ZnMgO are preferable as materials contained in the electron transport layer 60. .
- the reactant of the above-mentioned substance refers to an intermediate product that is partially or completely hydrolyzed or partially condensed.
- a solution containing the above-described substance is applied to a substrate and heated at 100 ° C. or higher and 150 ° C. or lower, or X in the formula (1) is a carboxylate group or In the case of an acetonate group, it is desirable that the carboxyl group absorption coefficient in the electron transport layer is 0.5 ⁇ 10 5 cm ⁇ 1 or more and 2.5 ⁇ 10 5 cm ⁇ 1 or less.
- the conduction band lower end energy of the electron transport layer 40 is preferably 4.4 eV or less, more preferably 4.2 eV or less, and even more preferably 4.0 eV or less.
- the conduction band lower end energy of the electron transport layer 60 can be calculated by subtracting the band gap obtained from the ultraviolet / visible absorption spectrum from the ionization potential obtained from the ultraviolet photoelectron spectroscopy.
- the electron transport layer 40 of the present embodiment can be formed by applying a solution containing the material represented by the above formula (1) and then performing a heat treatment.
- a solution containing a material represented by the following formula (1-1) is used, the heat treatment is preferably performed at 100 ° C. or higher and 150 ° C. or lower.
- the heat treatment temperature is less than 100 ° C., it does not function as an electron transport layer, and the photoelectric conversion performance is remarkably lowered or no photoelectric conversion is performed.
- the heat treatment temperature is 150 ° C. or higher, the conduction band lower end energy becomes too large, and the photoelectric conversion performance deteriorates.
- X is selected from halogen, a carboxylate group, an alkoxy group, an alkyl group, and an acetonate group represented by the following formula.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- the alkyl group include a methyl group, an ethyl group, and a propyl group.
- alkoxy group include a methoxy group and an ethoxy group.
- R 1 and R 2 are selected from hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, and an alkoxy group, and R 1 and R 2 may be the same or different.
- the alkyl group include a methyl group, an ethyl group, and a propyl group.
- the alkoxy group include a methoxy group and an ethoxy group.
- the solution used for film-forming of the electron carrying layer 40 can be produced by dissolving the material represented by the above formula (1) in a predetermined solvent.
- the solvent is not particularly limited as long as the material represented by the above formula (1) can be dissolved, but alcohol solvents such as methanol, ethanol, isopropanol, 1-propanol, 2-methoxyethanol, 2-ethoxyethanol, and their solvents A mixture etc. are mentioned.
- the concentration of the material represented by the above formula (1) in the solution is not particularly limited, but 1 mg to 1 g / ml, preferably 5 mg to 500 mg / ml, more preferably 10 mg to 100 mg / ml is desirable. .
- zinc acetate, magnesium acetate, aluminum acetylacetonate, aluminum chloride, gallium acetylacetonate, gallium chloride, zinc acetylacetonate, zinc chloride, diethylzinc are desirable, Of these, zinc acetate is most desirable.
- the formation method of the electron transport layer 40 is not particularly limited, and various film formation methods such as a spin coating method, a die coating method, a gravure printing method, an ink jet method, a spray method, and a screen printing method can be applied.
- the conduction band bottom energy adjustment layer 50 is interposed between the photoelectric conversion layer 60 and the electron transport layer 40.
- the conduction band bottom energy adjustment layer 50 has a function of reducing the conduction band bottom energy of the electron extraction layer 90 to be lower than the conduction band bottom energy of the electron transport layer 40.
- the amount of reduction in the conduction band bottom energy of the electron extraction layer 90 by the conduction band bottom energy adjustment layer 50 is not particularly limited, but is preferably 0.8 eV or more, more preferably 1.1 eV or more.
- the conduction band bottom energy of the electron extraction layer 90 and the electron transport layer 40 can be measured using photoelectron spectroscopy.
- the thickness of the conduction band bottom energy adjustment layer 50 may be a monolayer or more, and is preferably 0.5 to 50 nm.
- the material forming the conduction band bottom energy adjustment layer 50 is preferably a compound containing an alkali or alkaline earth metal, such as a sodium compound, potassium compound, rubidium compound, cesium compound, magnesium compound, potassium compound, strontium compound, barium compound, etc. Is mentioned. Specific examples include the metal carbonates, nitrates, acetates, sulfates, halides, and acetonate complexes described above.
- the formation method of the conduction band lower end energy adjustment layer 50 is not particularly limited, and various film formation methods such as a spin coating method, a die coating method, a gravure printing method, an ink jet method, a spray method, a screen printing method, and a vacuum deposition method are applied. be able to.
- the conduction band bottom energy adjustment layer 50 has a function of reducing the conduction band bottom energy of the electron extraction layer 90 from the conduction band bottom energy of the electron transport layer 40, but from the photoelectric conversion layer 60 to the first electrode 30. It may be responsible for transporting electrons. In this case, the conduction band bottom energy adjustment layer 50 can be regarded as a part of the electron transport layer 40.
- the photoelectric conversion layer 60 of the present embodiment is a bulk heterojunction layer, and is formed by mixing a p-type organic semiconductor having electron donating properties and an n-type organic semiconductor having electron accepting properties at a nano level.
- p-type organic semiconductors include polythiophene such as poly (3-hexylthiophene) and oligomers thereof, polypyrrole, polyaniline, polyfuran, polypyridine, polycarbazole, phthalocyanine, porphyrin, perylene, and other organic dye molecules and derivatives and transition metal complexes thereof.
- Electron donor molecules such as charge transfer agents such as triphenylamine compounds and hydrazine compounds and charge transfer complexes such as tetrariafulvalene (TTF).
- n-type organic semiconductors include fullerene, [60] PCBM (phenyl C61 butyric acid methyl ester), bis [60] PCBM, ICMA (Indene-C60 monoduct), ICBA (Indene-C60 bisaddact) and [70] PCBM (phenyl C71).
- Fullerene derivatives such as methyl butyrate
- carbon nanotubes carbon materials such as chemically modified carbon nanotubes, condensed ring aromatic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene Derivatives), 5- to 7-membered heterocyclic compounds containing nitrogen, oxygen, and sulfur atoms (eg, pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, Xaline, quinazoline, phthalazine, cinnoline, isoquinoline, pteridine, acridine, phenazine, phenanthroline, tetrazole, pyrazole, imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole, benzoxazo
- the n-type organic semiconductor is a fullerene or a fullerene derivative.
- fullerene represents C60, C70, C76, C78, C80, C82, C84, C90, C96, C240, C540, mixed fullerene, and fullerene nanotube
- fullerene derivative is a compound in which a substituent is added.
- alkyl group means a substituted or unsubstituted alkyl group.
- substituent that can be used in the compound in the present specification may be any substituent.
- the substituent represented by W is not particularly limited, and examples thereof include halogen atoms, alkyl groups (cycloalkyl groups, bicycloalkyl groups, tricycloalkyl groups). ), Alkenyl groups (including cycloalkenyl groups and bicycloalkenyl groups), alkynyl groups, aryl groups, heterocyclic groups (also referred to as heterocyclic groups), cyano groups, hydroxyl groups, nitro groups, carboxyl groups, Alkoxy group, aryloxy group, silyloxy group, heterocyclic oxy group, acyloxy group, carbamoyloxy group, alkoxycarbonyloxy group, aryloxycarbonyloxy group, amino group (including anilino group), ammonio group, acylamino group, aminocarbonyl Amino group, alkoxycarbonylamino group, Oxycarbonylamino group, sulfamoylamino group, alkyl or
- W represents a halogen atom (for example, a fluorine atom, a chlorine atom, a bromine atom or an iodine atom), an alkyl group [a linear, branched or cyclic substituted or unsubstituted alkyl group. They are alkyl groups (preferably alkyl groups having 1 to 30 carbon atoms such as methyl, ethyl, n-propyl, isopropyl, t-butyl, n-octyl, eicosyl, 2-chloroethyl, 2-cyanoethyl, 2-ethylhexyl).
- a halogen atom for example, a fluorine atom, a chlorine atom, a bromine atom or an iodine atom
- an alkyl group [a linear, branched or cyclic substituted or unsubstituted alkyl group. They are alkyl groups (preferably alkyl groups having 1 to
- a cycloalkyl group (preferably a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, such as cyclohexyl, cyclopentyl, 4-n-dodecylcyclohexyl), a bicycloalkyl group (preferably having 5 to 30 carbon atoms).
- a substituted or unsubstituted bicycloalkyl group that is, a monovalent group obtained by removing one hydrogen atom from a bicycloalkane having 5 to 30 carbon atoms, for example, bicyclo [1,2,2] heptan-2-yl, bicyclo Including [2,2,2] octane-3-yl) and tricyclo structures with more ring structures It is intended to.
- An alkyl group (for example, an alkyl group of an alkylthio group) in the substituent described below represents an alkyl group having such a concept, but further includes an alkenyl group and an alkynyl group.
- An alkenyl group [represents a linear, branched or cyclic substituted or unsubstituted alkenyl group. They are alkenyl groups (preferably substituted or unsubstituted alkenyl groups having 2 to 30 carbon atoms, such as vinyl, allyl, prenyl, geranyl, oleyl), cycloalkenyl groups (preferably substituted or unsubstituted 3 to 30 carbon atoms or An unsubstituted cycloalkenyl group, that is, a monovalent group obtained by removing one hydrogen atom of a cycloalkene having 3 to 30 carbon atoms (for example, 2-cyclopenten-1-yl, 2-cyclohexen-1-yl), Bicycloalkenyl group (a substituted or unsubstituted bicycloalkenyl group, preferably a substituted or unsubstituted bicycloalkenyl group having 5 to 30 carbon atoms, that is,
- bicyclo [2,2,1] hept-2-en-1-yl, bicyclo [2,2 2] is intended to encompass oct-2-en-4-yl).
- An alkynyl group preferably a substituted or unsubstituted alkynyl group having 2 to 30 carbon atoms, such as ethynyl, propargyl, trimethylsilylethynyl group
- an aryl group preferably a substituted or unsubstituted aryl having 6 to 30 carbon atoms
- Groups such as phenyl, p-tolyl, naphthyl, m-chlorophenyl, o-hexadecanoylaminophenyl
- heterocyclic groups preferably 5- or 6-membered substituted or unsubstituted aromatic or non-aromatic heterocycles
- Substituted silyl groups such as trimethylsilyl, t-butyldimethyl Tilsilyl, phenyldimethylsilyl), a hydrazino group (preferably a substituted or unsubstituted hydrazino group having 0 to 30 carbon atoms, such as trimethylhydrazino), or a ureido group (preferably a substituted or unsubstituted group having 0 to 30 carbon atoms).
- a ureido group such as N, N-dimethylureido.
- two Ws can be combined to form a ring (aromatic or non-aromatic, hydrocarbon ring or heterocyclic ring. These can be further combined to form a polycyclic fused ring.
- a benzene ring or a naphthalene ring can be combined to form a polycyclic fused ring.
- substituents W those having a hydrogen atom may be substituted with the above groups by removing this.
- substituents include —CONHSO 2 — group (sulfonylcarbamoyl group, carbonylsulfamoyl group), —CONHCO— group (carbonylcarbamoyl group), or —SO 2 NHSO 2 — group (sulfonylsulfamoyl group).
- an alkylcarbonylaminosulfonyl group eg, acetylaminosulfonyl
- an arylcarbonylaminosulfonyl group eg, benzoylaminosulfonyl group
- an alkylsulfonylaminocarbonyl group eg, methylsulfonylaminocarbonyl
- an aminocarbonyl group for example, p-methylphenylsulfonylaminocarbonyl
- fullerene derivatives include compounds represented by the following general formula (2).
- FL with a round frame represents fullerene C60, C70, or C84.
- Y represents a substituent.
- the substituent the aforementioned W can be used.
- Preferred examples of the substituent include an alkyl group, an aryl group, and a heterocyclic group. Preferred examples and preferred specific examples thereof include those represented by W.
- the alkyl group is more preferably an alkyl group having 1 to 12 carbon atoms
- the aryl group and the heterocyclic group are preferably a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, fluorene ring, triphenylene ring, naphthacene ring, Biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring , Benzimidazole ring, imidazopyridine ring, quinolidine ring, quinoline ring, phthalazine ring,
- n represents an integer of 1 to 60, preferably an integer of 1 to 10.
- fullerene derivatives preferably used in the present embodiment are given below, but the present embodiment is not limited to these.
- fullerenes and fullerene derivatives used in this embodiment are described in the Chemical Society of Japan, Quarterly Chemical Review No. 43 (1999), JP-A-10-167994, JP-A-11-255508, JP-A-11-255509, JP-A 2002-241323, JP-A-2003-19681, and the like. It can also be used.
- the fullerenes and fullerene compounds used in the present embodiment are described in, for example, the Chemical Society of Japan, Quarterly Chemical Review No. 43 (1999), JP-A-10-167994, JP-A-11-255508, JP-A-11-255509, JP-A-2002-241323, JP-A-2003-19681, etc. It can be produced according to the method described.
- open circuit voltage (Voc) can be improved by using ICBA as an n-type organic semiconductor.
- the first reduction potential is preferably at 1160mV (vs Fc / Fc +) or more, 1250mV (vs Fc / Fc + ) or Is more preferably 1350 mV (vs Fc / Fc + ) or more.
- J. et al. Referring to “Electochemical Methods: Fundamentals and Applicaitons” by Bard, the following can be implemented.
- a 0.1M solution of tetrabutylammonium perchlorate in o-dichlorobenzene is prepared, and 4 mg of ferrocene is added per 50 mL as an internal standard substance to prepare a measurement solution.
- 1.5 mg of fullerene derivative is added to 2 mL of this solution, and the oxidation-reduction potential is measured with a potentiostat galvanostat (Electrochemical Analyzer Model 630A manufactured by ALS) at a sweep rate of 20 mV / s.
- the first reduction potential is determined based on the oxidation / reduction potential (Fc / Fc +) of ferrocene added as an internal reference substance, and the average of the first reduction peak and its oxidation peak.
- the film thickness of the photoelectric conversion layer 60 is not particularly limited, but is desirably 5 to 1000 nm, preferably 10 to 500 nm, more preferably 20 to 200 nm, and still more preferably 40 to 100 nm. As the film thickness of the photoelectric conversion layer 60 is thinner, the light resistance tends to be improved.
- the hole transport layer 70 is provided in a region between the second electrode 80 and the photoelectric conversion layer 60.
- the hole transport layer 70 has a function of easily moving holes from the photoelectric conversion layer 60 to the second electrode 80.
- the hole transport layer 70 can have a function of making it difficult for electrons to move from the photoelectric conversion layer 60 to the second electrode 80.
- the hole transport layer 70 is made of, for example, a conductive polymer such as PEDOT (polythioethylene, poly (ethylenedioxy) thiophene) / PSS (polystyrenesulfonate), polypyrrole, polyaniline, polyfuran, polypyridine, polycarbazole, Inorganic compounds such as MoO 3 and WO 3 , organic semiconductor molecules such as phthalocyanine and porphyrin, and derivatives and transition metal complexes thereof, charge transfer agents such as triphenylamine compounds and hydrazine compounds, and tetrariafulvalene (TTF) Formed of a material having a high hole mobility such as a simple charge transfer complex.
- the thickness of the hole transport layer is not particularly limited, but is 10 to 100 nm, preferably 20 to 60 nm.
- the second electrode 80 of the present embodiment is a positive electrode (hole extraction electrode), and is electrically connected to the photoelectric conversion layer 60 on the side opposite to the light receiving surface of the photoelectric conversion layer 60 via the hole transport layer 70. Connected.
- the material of the second electrode 80 is not particularly limited as long as it has conductivity. However, a metal such as gold, platinum, silver, copper, aluminum, magnesium, lithium, potassium, or a carbon electrode may be used. it can.
- the second electrode 80 can be formed by a known method such as a vacuum deposition method, an electron beam vacuum deposition method, a sputtering method, or applying metal fine particles dispersed in a solvent and volatilizing and removing the solvent.
- the photoelectric conversion element 10 can incorporate a means for blocking ultraviolet rays.
- the means for blocking the ultraviolet rays is not particularly limited as long as the element can be blocked from the ultraviolet rays, but examples include an ultraviolet absorbing layer, an ultraviolet reflecting layer, and a wavelength conversion layer for converting ultraviolet rays to another wavelength.
- the position for providing the means for blocking ultraviolet rays is not particularly limited as long as the element can be blocked from ultraviolet rays, but a layer having an ultraviolet blocking function as described above is provided on the substrate surface on the light irradiation side, or a film having an ultraviolet blocking function is pasted.
- a substrate with an ultraviolet blocking function as the light irradiation side substrate, or provide a layer having an ultraviolet blocking function between the light irradiation side substrate and the transparent conductive film, or a substrate structure (
- a sealing material provided with an ultraviolet blocking function.
- the wavelength region of the ultraviolet ray to be blocked is not particularly limited, but the transmittance is 10 in the wavelength region of 330 nm or less, preferably 350 nm or less, more preferably 370 nm or less, more preferably 390 nm or less, and more preferably 400 nm or less. % Or less, preferably 1% or less, and more preferably 0.1% or less.
- the amount of decrease in photoelectric conversion efficiency / photoelectric conversion efficiency in initial state ⁇ 100) is preferably 10% or less.
- the illuminance of the xenon lamp is adjusted with an ultraviolet radiometer (MS-212A manufactured by Eihiro Seiki Co., Ltd.) so that the amount of ultraviolet light between 315 and 400 nm is 45 W / m 2 .
- the photoelectric conversion element 10 According to the photoelectric conversion element 10 according to the present embodiment, it is possible not only to improve the photoelectric conversion efficiency in the initial state where light is not irradiated, but also to suppress a decrease in photoelectric conversion efficiency when light irradiation is continued for a long time. . As a result, the lifetime of the photoelectric conversion element 10 can be extended.
- Table 1 shows the manufacturing conditions of the photoelectric conversion elements of Examples 1 to 4 and Comparative Examples 1 to 12. With reference to Table 1, a method for manufacturing the photoelectric conversion elements of Examples 1 to 4 and Comparative Examples 1 to 12 will be described.
- Example 1 ⁇ Formation of negative electrode> A glass substrate (surface resistance value 15 ⁇ / ⁇ ) on which ITO was formed by sputtering was washed to obtain a negative electrode (electron extraction electrode) electrode.
- the solution was spin-coated on the above-described negative electrode ITO at 2000 rpm (30 seconds), and heat-treated on a hot plate at 120 ° C. for 5 minutes to form an electron transport layer (see Table 1).
- the thickness of the electron transport layer after the heat treatment was 30 nm.
- Cesium carbonate (manufactured by Aldrich) was dissolved in 2-ethoxyethanol to a concentration of 1.86 mg / ml to prepare a solution.
- the solution was spin-coated at 5000 rpm (30 seconds), and heat conduction was performed on a hot plate at 150 ° C. for 10 minutes to form a conduction band bottom energy adjustment layer.
- the film thickness of the conduction band bottom energy adjustment layer after the heat treatment was 5 nm.
- ⁇ Formation of photoelectric conversion layer> P3HT and PCBM were mixed at a mass ratio of 1.0: 1.0 and dissolved in orthodichlorobenzene so that the total concentration was 2.5% by mass.
- a photoelectric conversion layer was formed by spin coating at 750 rpm (10 seconds) on the substrate on which the conduction band bottom energy adjustment layer was formed.
- ⁇ Formation of hole transport layer> WO 3 was vacuum-deposited by resistance heating on the substrate on which the photoelectric conversion layer was formed.
- the film thickness of the WO 3 layer is 10 nm.
- the degree of vacuum during vapor deposition was set to 10 ⁇ 6 Torr or less.
- Example 2 The manufacturing method of the photoelectric conversion element of Example 2 is the same as that of Example 1 except that the heat treatment temperature when forming the electron transport layer is 300 ° C.
- the production method of the photoelectric conversion element of Example 3 is the same as that of Example 1 except that ZnMgO was produced as an electron transport layer as described below.
- Examples 4 to 6 Except that an ultraviolet cut film (manufactured by King Seisakusho, KU-1000100, transmittance in wavelength region of 370 nm or less, 1% or less) was pasted on the glass substrate of the negative electrode, it was the same as Examples 1 to 3, respectively. .
- an ultraviolet cut film manufactured by King Seisakusho, KU-1000100, transmittance in wavelength region of 370 nm or less, 1% or less
- Comparative Examples 1 to 4 The production methods of the photoelectric conversion elements of Comparative Examples 1 to 3 are the same as those of Examples 1 to 3, except that the conduction band bottom energy adjustment layer is not formed.
- the method for producing the photoelectric conversion element of Comparative Example 4 was the same as that of the photoelectric conversion element of Example 1 except that the conduction band lower end energy adjustment layer was not formed and cesium carbonate was produced as follows using the electron transport layer. This is the same as the manufacturing method. ⁇ Formation of electron transport layer> Cesium carbonate (manufactured by Aldrich) was dissolved in 2-ethoxyethanol to a concentration of 1.86 mg / ml to prepare a solution.
- the solution was spin-coated on the above-described negative electrode ITO at 5000 rpm (30 seconds), and heat-treated on a hot plate at 150 ° C. for 10 minutes to form an electron transport layer.
- the film thickness of the electron transport layer after the heat treatment was 5 nm.
- Example 5 As the conduction band bottom energy adjustment layer, it is the same as Example 2 except that zinc acetate was produced as follows. ⁇ Formation of conduction band bottom energy adjustment layer> Zinc acetate dihydrate (manufactured by Aldrich) was dissolved in 2-methoxyethanol to a concentration of 20 mg / ml, and monoethanolamine was further added (55 ⁇ l / ml) to prepare a solution. The solution was spin-coated on the electron transport layer formed by the above-described method at 2000 rpm (30 seconds), and heat-treated on a hot plate at 120 ° C. for 5 minutes to form a conduction band bottom energy adjustment layer. The film thickness of the conduction band bottom energy adjustment layer after the heat treatment was 30 nm.
- Example 2 is the same as Example 2 except that ZnMgO was prepared as follows as the conduction band bottom energy adjustment layer.
- ZnMgO was prepared as follows as the conduction band bottom energy adjustment layer.
- the solution was spin-coated at 2000 rpm (30 seconds) on the electron transport layer formed by the above method, and heat-treated on a hot plate at 300 ° C. for 5 minutes to form an electron transport layer.
- the thickness of the electron transport layer after the heat treatment was 30 nm.
- Comparative Examples 7 to 12 Comparative Examples 1 to 6 except that an ultraviolet cut film (manufactured by King Seisakusho Co., Ltd., KU-1000100, transmittance in wavelength region of 370 nm or less, 1% or less) was pasted on the glass substrate of the negative electrode. .
- an ultraviolet cut film manufactured by King Seisakusho Co., Ltd., KU-1000100, transmittance in wavelength region of 370 nm or less, 1% or less
- the photoelectron spectra of the electron extraction layer and the electron transport layer were measured by He (I) -excited ultraviolet photoelectron spectroscopy with an energy of 21.22 electron volts.
- the ionization potential was evaluated from the high binding energy side cut-off energy of the obtained photoelectron spectrum.
- U-4100 manufactured by Hitachi High-Technologies Corporation was used for ultraviolet / visible absorption spectrum measurement.
- the band gap was evaluated from the cut-off of the long wavelength side of the obtained absorption spectrum.
- the energy at the bottom of the conduction band was calculated by subtracting the optical band gap from the ionization potential. The results obtained for the conduction band bottom energy are shown in Table 2.
- the conduction band lower end energy is calculated by the above method while digging in the film thickness direction by Ar sputtering using the substrate with the electron extraction layer remaining on the substrate.
- the first reduction potential is determined based on the oxidation / reduction potential (Fc / Fc +) of ferrocene added as an internal reference substance, and the average of the first reduction peak and its oxidation peak.
- FIG. 2 is a graph showing the light resistance of the photoelectric conversion elements of Examples 1 to 3 and Comparative Examples 1 to 6.
- FIG. 3 is a graph showing the light resistance of the photoelectric conversion elements of Examples 4 to 6 and Comparative Examples 7 to 12.
- the light resistance test is performed using a light resistance test device (SUNTS-XLS, manufactured by Atlas Co., Ltd.) so that the amount of ultraviolet light between 315 and 400 nm is 45 W / m 2 using an ultraviolet radiometer (MS-212A manufactured by EKO). After adjusting the illuminance of the xenon lamp, a sample was put in and continuously irradiated at an ambient temperature of 40 ° C. for 1000 hours.
- the photoelectric conversion efficiency after elapse of a predetermined time is plotted in FIGS. 2 and 3 with the photoelectric conversion efficiency in the initial state as a reference.
- the cesium carbonate of Comparative Example 4 is used as the electron transport layer.
- the yield was improved, and the photoelectric conversion element of Comparative Examples 1 to 3 in which the conduction band bottom energy adjustment layer was not provided, or the comparative example in which the conduction band bottom energy reduction effect of the electron extraction layer was small Compared with the photoelectric conversion elements 5 and 6, the decrease in photoelectric conversion efficiency is greatly suppressed.
- the photoelectric conversion elements of Examples 4 to 6 to which the ultraviolet cut film was attached the photoelectric conversion elements of Comparative Examples 7 to 10 to which the same ultraviolet cut film was attached and the conduction band bottom energy adjustment layer was not provided, and the electron extraction Compared to the photoelectric conversion elements of Comparative Examples 11 and 12, which had a small effect of reducing the energy at the bottom of the conduction band of the layer, the decrease in photoelectric conversion efficiency was greatly suppressed, and the photoelectric conversion efficiency decreased substantially after about 40 hours of continuous irradiation. It was confirmed that the photoelectric conversion efficiency of 90% or more of the initial state was maintained.
- the electron extraction layer 90 including the electron transport layer 40 and the conduction band bottom energy adjustment layer 50 is provided between the first electrode 30 and the photoelectric conversion layer 60, although the hole transport layer 70 is provided between the conversion layer 60 and the second electrode 80, the position of the hole transport layer 70 and the position of the electron extraction layer 90 can be switched.
- the hole transport layer 70 is provided in the region between the first electrode 30 and the photoelectric conversion layer 60 and the electron extraction layer 90 is provided in the region between the second electrode 80 and the photoelectric conversion layer 60
- the first electrode 30 is a positive electrode
- the second electrode 80 is a negative electrode.
- the conduction band bottom energy adjustment layer 50, the electron transport layer 40, and the second electrode 80 are provided in this order on the surface opposite to the light receiving surface of the photoelectric conversion layer 60.
- the present invention can be used in a field related to a photoelectric conversion element that converts light energy into electric energy by photoelectric conversion.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
M(X)a ・・・(1)
上記(1)式において、Mはアルカリ金属、アルカリ土類金属、2B、3B族の金属、遷移金属から成る群より選ばれる金属または合金、Xは酸素、ハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれ、aはMの価数に応じて決まる、正の整数である。
下式(2)の物質を含有する溶液を塗布により成膜した後、100℃以上150℃以下で加熱することにより前記電子輸送層を形成する工程と、セシウム化合物を含有する伝導帯下端エネルギー調整層を成膜する工程と、を備えることを特徴とする。
Zn(X)2 ・・・(2)
上記(2)式において、Xは酸素、ハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれる。
Zn(X)2 ・・・(1-1)
上記(1-1)式において、Xは酸素、ハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれる。
Mg(X)2 ・・・(1-2)
上記(1-2)式において、Xは酸素、ハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれる。
M(X)a (1)
上記(1)式において、Mはアルカリ金属、アルカリ土類金属、2B、3B族の金属、遷移金属から成る群より選ばれ、Xはハロゲン、カルボキシラート基、アルコキシ基、アルキル基、および下式で表されるアセトナート基から選ばれ、aはMの価数に応じて決まる、正の整数である。
Zn(X)2 (1-1)
上記(1-1)式において、Xはハロゲン、カルボキシラート基、アルコキシ基、アルキル基、および下式で表されるアセトナート基から選ばれる。
Mg(X)2 (1-2)
上記(1-2)式において、Xはハロゲン、カルボキシラート基、アルコキシ基、アルキル基、および下式で表されるアセトナート基から選ばれる。
また、Yは置換基を表す。置換基としては、前述のWを用いることができる。
置換基として好ましくは、アルキル基、アリール基、又は複素環基であり、好ましいもの及びそれらの好ましい具体例はWで示したものが挙げられる。アルキル基としてさらに好ましくは、炭素数1~12のアルキル基であり、アリール基、及び複素環基として好ましくは、ベンゼン環、ナフタレン環、アントラセン環、フェナントレン環、フルオレン環、トリフェニレン環、ナフタセン環、ビフェニル環、ピロール環、フラン環、チオフェン環、イミダゾール環、オキサゾール環、チアゾール環、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、インドリジン環、インドール環、ベンゾフラン環、ベンゾチオフェン環、イソベンゾフラン環、ベンズイミダゾール環、イミダゾピリジン環、キノリジン環、キノリン環、フタラジン環、ナフチリジン環、キノキサリン環、キノキサゾリン環、イソキノリン環、カルバゾール環、フェナントリジン環、アクリジン環、フェナントロリン環、チアントレン環、クロメン環、キサンテン環、フェノキサチイン環、フェノチアジン環、またはフェナジン環であり、さらに好ましくは、ベンゼン環、ナフタレン環、アントラセン環、フェナントレン環、ピリジン環、イミダゾール環、オキサゾール環、またはチアゾール環であり、特に好ましくはベンゼン環、ナフタレン環、またはピリジン環である。これらはさらに置換基を有していてもよく、その置換基は可能な限り結合して環を形成してもよい。なお、nが2以上のとき複数のYは同一であっても異なっていてもよい。また、複数のXは可能な限り結合して環を形成してもよい。nは1~60の整数を表すが、好ましくは1~10の整数である。
テトラブチルアンモニウム過塩素酸塩のo-ジクロロベンゼン0.1M溶液を作製し、内部基準物質として50mLあたり4mgのフェロセン添加し測定溶液を調製する。この溶液2mLにフラーレン誘導体を1.5mg添加し、掃引速度20mV/sにて酸化還元電位をポテンショスタットガルバノスタット(ALS製エレクトロケミカルアナライザーモデル630A)にて測定する。第一還元電位は内部基準物質として添加したフェロセンの酸化/還元電位(Fc/Fc+)を基準とし、第一還元ピークとその酸化ピークの平均として決定する。
<負極の形成>
ITOをスパッタ法により成膜したガラス基板(面抵抗値15Ω/□)を洗浄して負極(電子取出電極)用電極とした。
<電子取出層の形成>
(1)電子輸送層の形成
溶液塗布法により電子輸送層を作製した。具体的には、酢酸亜鉛・2水和物(アルドリッチ社製)を濃度20mg/mlになるように2-メトキシエタノール中に溶解させ、さらに、モノエタノールアミンを添加(55μl/ml)して溶液を調製した。上述した負極用のITO上に、前記溶液を2000rpm(30秒)でスピンコートし、ホットプレート上で120℃、5分間熱処理して電子輸送層を形成した(表1参照)。熱処理後の電子輸送層の膜厚は30nmであった。
(2)伝導帯下端エネルギー調整層の形成
炭酸セシウム(アルドリッチ社製)を濃度1.86mg/mlになるように2-エトキシエタノール中に溶解させ、溶液を調製した。上述の方法で形成した電子輸送層の上に、当該溶液を5000rpm(30秒)でスピンコートし、ホットプレート上で150℃、10分間熱処理することで伝導帯下端エネルギー調整層を形成した。熱処理後の伝導帯下端エネルギー調整層の膜厚は5nmであった。
<光電変換層の形成>
P3HTとPCBMを質量比1.0:1.0で混合し、合計濃度が2.5質量%となるようにオルトジクロロベンゼンに溶解させた。上記伝導帯下端エネルギー調整層を形成した基板上に750rpm(10秒)でスピンコートし、光電変換層を形成した。
<正孔輸送層の形成>
光電変換層を作製した基板上にWO3を抵抗加熱法により真空蒸着した。WO3層の膜厚は10nmである。蒸着時の真空度は10-6Torr以下とした。
<正極の形成>
上記正孔輸送層まで作製した基板上にAgを抵抗加熱法により真空蒸着した。Ag層の膜厚は100nmである。蒸着時の真空度は10-6Torr以下とした。
<封止処理>
上記のように作製した光電変換素子(有機太陽電池素子)を熱硬化性封止剤を用いてカバーガラスと貼り合せ、封止素子を得た。
実施例2の光電変換素子の作製方法は、電子輸送層を形成する際の熱処理温度が300℃であることを除き、実施例1と同様である。実施例3の光電変換素子の作製方法は、電子輸送層としてZnMgOを下記のように作製したことを除き、実施例1と同様である。
<電子輸送層の形成>
酢酸亜鉛・2水和物(アルドリッチ社製)と酢酸マグネシウム・4水和物(アルドリッチ社製)をそれぞれ、濃度15mg/ml、5mg/mlになるように2-メトキシエタノール中に溶解させ、さらに、モノエタノールアミンを添加(5.5μl/ml)して、2時間以上攪拌した。上述した負極用のITO上に、前記溶液を2000rpm(30秒)でスピンコートし、ホットプレート上で300℃5分間熱処理して電子輸送層を形成した。熱処理後の電子輸送層の膜厚は30nmであった。
紫外線カットフィルム(株式会社キング製作所製、KU-1000100、370nm以下の波長領域の透過率が1%以下)を負極のガラス基板上に貼付したことを除き、それぞれ実施例1~3と同様である。
比較例1~3の光電変換素子の作製方法は、伝導帯下端エネルギー調整層を形成しないことを除き、それぞれ実施例1~3と同様である。比較例4の光電変換素子の作製方法は、伝導帯下端エネルギー調整層を形成しないこと、および電子輸送層をとして炭酸セシウムを下記のように作製したことを除き、実施例1の光電変換素子の作製方法と同様である。
<電子輸送層の形成>
炭酸セシウム(アルドリッチ社製)を濃度1.86mg/mlになるように2-エトキシエタノール中に溶解させ、溶液を調製した。上述した負極用のITO上に、前記溶液を5000rpm(30秒)でスピンコートし、ホットプレート上で150℃、10分間熱処理して電子輸送層を形成した。熱処理後の電子輸送層の膜厚は5nmであった。
伝導帯下端エネルギー調整層として、酢酸亜鉛を下記のように作製したことを除き、実施例2と同様である。
<伝導帯下端エネルギー調整層の形成>
酢酸亜鉛・2水和物(アルドリッチ社製)を濃度20mg/mlになるように2-メトキシエタノール中に溶解させ、さらに、モノエタノールアミンを添加(55μl/ml)して溶液を調製した。上述の方法で形成した電子輸送層上に、前記溶液を2000rpm(30秒)でスピンコートし、ホットプレート上で120℃、5分間熱処理して伝導帯下端エネルギー調整層を形成した。熱処理後の伝導帯下端エネルギー調整層の膜厚は30nmであった。
伝導帯下端エネルギー調整層として、ZnMgOを下記のように作製したことを除き、実施例2と同様である。
<伝導帯下端エネルギー調整層の形成>
酢酸亜鉛・2水和物(アルドリッチ社製)と酢酸マグネシウム・4水和物(アルドリッチ社製)をそれぞれ、濃度15mg/ml、5mg/mlになるように2-メトキシエタノール中に溶解させ、さらに、モノエタノールアミンを添加(5.5μl/ml)して、2時間以上攪拌した。上述の方法で形成した電子輸送層上に、前記溶液を2000rpm(30秒)でスピンコートし、ホットプレート上で300℃5分間熱処理して電子輸送層を形成した。熱処理後の電子輸送層の膜厚は30nmであった。
紫外線カットフィルム(株式会社キング製作所製、KU-1000100、370nm以下の波長領域の透過率が1%以下)を負極のガラス基板上に貼付したことを除き、それぞれ比較例1~6と同様である。
初期状態の実施例1~6、および比較例1~12の光電変換素子について、室温で1000W/m2疑似太陽光を照射しながら電流電圧特性を測定した。得られた電流-電圧特性より太陽電池の光電変換効率および開放電圧を算出した。光電変換効率、開放電圧について得られた結果を表2に示す。
各実施例、各比較例の歩留まりに関しては、以下のように算出した。歩留まりに関して得られた結果を表2に示す。
(1)同じ素子を10個以上作製し、光電変換効率を評価する。
(2)ショートしているなど明らかに光電変換効率が低い素子は除いた上で、光電変換効率の平均値を算出する。
(3)算出した平均値の75%以上のものを良品として、歩留まり[%]=100×良品数/全数で歩留まりを算出する。
電子取出層および電子輸送層の伝導帯下端エネルギーの評価には、紫外光電子分光法により求めたイオン化ポテンシャル、および紫外・可視吸収スペクトルより求めたバンドギャップを用いておこなった(参考文献:T.C.Nguyen著“Electronic Properties of Conjugated Polyelectrolyte Thin Film” J.AM.CHEM.SOC. 2008, 130, 10042-10043)。紫外光電子分光器としてKratos社製AXIS Ultraを用い、エネルギー21.22エレクトロンボルトのHe(I)励起の紫外光電子分光法により電子取出層及び電子輸送層の光電子スペクトルを測定した。得られた光電子スペクトルの高束縛エネルギー側カットオフエネルギーより、イオン化ポテンシャルを評価した。紫外・可視吸収スペクトル測定には、日立ハイテクノロジーズ社製U-4100を用いた。得られた吸収スペクトルの長波長側カットオフより、バンドギャップを評価した。イオン化ポテンシャルから光学バンドギャップを差し引くことで、伝導帯下端エネルギーを算出した。伝導帯下端エネルギーに関して得られた結果を表2に示す。なお、光電変換素子に組み込まれた電子取出層および電子輸送層の伝導帯下端エネルギーを測定する場合は、光電変換素子のカバーガラスの一方を剥ぎ取り、光電変換層をo-ジクロロベンゼンで溶解除去した後、基板上に残った、電子取出層付基板を用いて、Arスパッタリングにより膜厚方向に掘り進めながら、上記方法で伝導帯下端エネルギーを算出する。
A.J.Bard著「Electochemical Methods: Fundamentals and Applicaitons」を参考に以下のように実施した。
図2は、実施例1~3、および比較例1~6の光電変換素子における耐光性を示すグラフである。また、図3は、実施例4~6、および比較例7~12の光電変換素子における耐光性を示すグラフである。耐光性試験は、耐光性試験装置(アトラス社製、SUNTES-XLS)を用いて、紫外線放射計(英弘精機製MS-212A)で315~400nm間の紫外線量が45W/m2になるようにキセノンランプの照度調整を行った後、サンプルを投入し、雰囲気温度40℃で、1000時間連続照射した。
所定時間経過後の光電変換効率を初期状態の光電変換効率を基準として図2および図3にプロットした。
Claims (9)
- 少なくとも光電変換層と、
前記光電変換層の一方の主表面側に設けられている電子取出電極と、
前記光電変換層の他方の主表面側に設けられている正孔取出電極と、
前記光電変換層と前記電子取出電極との間に設けられ、少なくとも電子輸送層を含む、電子取出層と、
を備え、
前記電子取出層の伝導帯下端エネルギーを前記電子輸送層の伝導帯下端エネルギーよりも低減させる伝導帯下端エネルギー調整層を前記光電変換層と前記電子輸送層との間に備えることを特徴とする光電変換素子。 - 光未照射の初期状態から、紫外線強度を1Sun相当に調整したキセノンランプ光を、雰囲気温度40℃で1000時間連続照射した場合において、光電変換効率の低下割合が10%以下である請求項1に記載の光電変換素子。
- 前記伝導帯下端エネルギー調整層がセシウム化合物を含む請求項1または2に記載の光電変換素子。
- 前記電子輸送層が酢酸亜鉛、酢酸マグネシウム、アルミニウムアセチルアセトナート、塩化アルミニウム、ガリウムアセチルアセトナート、塩化ガリウム、亜鉛アセチルアセトナート、塩化亜鉛、ジエチル亜鉛、ZnMgOからなる群より選ばれる1以上の金属化合物およびその反応物を含む請求項1乃至4のいずれか1項に記載の光電変換素子。
- 前記光電変換層が1160mV(vs Fc/Fc+)以上の第一還元電位を有するフラーレン誘導体を含む請求項1乃至5のいずれか1項に記載の光電変換素子。
- 前記フラーレン誘導体がICBA(Indene-C60 bisadduct)である請求項6に記載の光電変換素子。
- 一対の電極と、当該一対の電極の間に位置する光電変換層と、一方の電極と前記光電変換層との間に設けられた電子輸送層と、前記光電変換層と前記電子輸送層との間に介在する伝導帯下端エネルギー調整層とを有する光電変換素子の製造方法であって、
下式(1-1)の物質を含有する溶液を塗布により成膜した後、100℃以上150℃以下で加熱することにより前記電子輸送層を形成する工程と、
セシウム化合物を含有する伝導帯下端エネルギー調整層を成膜する工程と、
を備えることを特徴とする光電変換素子の製造方法。
Zn(X)2 (1-1)
上記(1)式において、Xはハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれる。
- 一対の電極と、当該一対の電極の間に位置する光電変換層と、一方の電極と前記光電変換層との間に設けられた電子輸送層と、前記光電変換層と前記電子輸送層との間に介在する伝導帯下端エネルギー調整層とを有する光電変換素子の製造方法であって、
下式(1-1)および(1-2)の物質を含有する溶液を塗布により成膜した後、300℃以上で加熱することにより前記電子輸送層を形成する工程と、
セシウム化合物を含有する伝導帯下端エネルギー調整層を成膜する工程と、
を備えることを特徴とする光電変換素子の製造方法。
Zn(X)2 (1-1)
上記(1-1)式において、Xはハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれる。
Mg(X)2 (1-2)
上記(1-2)式において、Xはハロゲン、カルボキシラート基、アルコキシ基、アルキル基および下式で表されるアセトナート基から選ばれる。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280054787.9A CN103931008A (zh) | 2011-11-07 | 2012-11-06 | 光电转换元件及其制造方法 |
EP12846834.5A EP2779262A4 (en) | 2011-11-07 | 2012-11-06 | PHOTOVOLTAIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
US14/268,167 US20140238482A1 (en) | 2011-11-07 | 2014-05-02 | Photoelectric conversion element and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-243896 | 2011-11-07 | ||
JP2011243896 | 2011-11-07 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/268,167 Continuation US20140238482A1 (en) | 2011-11-07 | 2014-05-02 | Photoelectric conversion element and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013069261A1 true WO2013069261A1 (ja) | 2013-05-16 |
Family
ID=48289430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/007114 WO2013069261A1 (ja) | 2011-11-07 | 2012-11-06 | 光電変換素子およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140238482A1 (ja) |
EP (1) | EP2779262A4 (ja) |
JP (1) | JPWO2013069261A1 (ja) |
CN (1) | CN103931008A (ja) |
WO (1) | WO2013069261A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015087917A1 (ja) * | 2013-12-11 | 2015-06-18 | 積水化学工業株式会社 | 薄膜太陽電池及び薄膜太陽電池の製造方法 |
US20150194607A1 (en) * | 2012-06-26 | 2015-07-09 | Toray Industries, Inc. | Photovoltaic element |
JP2018107350A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社リコー | 光電変換素子 |
JP2020532049A (ja) * | 2017-08-16 | 2020-11-05 | ナノシス・インク. | 向上した分散性及び改良された性能を有するpegベースのリガンド |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015066623A1 (en) * | 2013-11-01 | 2015-05-07 | The Regents Of The University Of Michigan | Decorative dual-function photovoltaic devices generating angle insensitive transmissive or reflective colors |
WO2016200897A1 (en) * | 2015-06-08 | 2016-12-15 | The Florida State University Research Foundation, Inc. | Single-layer light-emitting diodes using organometallic halide perovskite/ionic-conducting polymer composite |
CN105070840A (zh) * | 2015-07-13 | 2015-11-18 | 南京邮电大学 | 一种提高基于富勒烯的有机太阳能电池性能的方法 |
CN105870329A (zh) * | 2016-04-12 | 2016-08-17 | 中国科学院长春光学精密机械与物理研究所 | 一种基于水溶性氟化铷的倒置结构聚合物太阳能电池的制备方法 |
US10351715B2 (en) * | 2017-03-30 | 2019-07-16 | The United States Of America As Represented By The Secretary Of The Navy | Synergistic metal polycarboxylate corrosion inhibitors |
CN107369768B (zh) * | 2017-08-07 | 2019-09-27 | 电子科技大学 | 一种基于新有机铅源的钙钛矿太阳能电池的制备方法 |
KR102443644B1 (ko) | 2017-11-20 | 2022-09-14 | 삼성전자주식회사 | 양자점 소자와 표시 장치 |
CN108365109A (zh) * | 2018-01-19 | 2018-08-03 | 华南师范大学 | 一种乙酰丙酮铝阴极修饰的聚合物太阳能电池及其制备方法 |
CN108565341B (zh) * | 2018-05-04 | 2021-07-16 | 宝德照明集团有限公司 | 一种硅异质结太阳能电池及其制备方法 |
CN110034177A (zh) * | 2019-04-24 | 2019-07-19 | 深圳扑浪创新科技有限公司 | 一种光电复合薄膜及其用途 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10167994A (ja) | 1996-12-09 | 1998-06-23 | Mitsubishi Chem Corp | 炭素クラスター誘導体 |
JPH11255509A (ja) | 1998-03-09 | 1999-09-21 | Mitsubishi Chemical Corp | C60誘導体 |
JPH11255508A (ja) | 1998-03-09 | 1999-09-21 | Mitsubishi Chemical Corp | C70誘導体 |
JP2002241323A (ja) | 2001-02-20 | 2002-08-28 | Mitsubishi Chemicals Corp | 炭素クラスターアニオン及びこれを含む金属錯体 |
JP2003196881A (ja) | 2001-09-03 | 2003-07-11 | Mitsui Chemicals Inc | フラーレン系色素及びその用途 |
JP2006073583A (ja) | 2004-08-31 | 2006-03-16 | Toray Ind Inc | 光電変換素子用材料およびこれを用いた光電変換素子 |
WO2008018931A2 (en) * | 2006-06-13 | 2008-02-14 | Plextronics, Inc. | Organic photovoltaic devices comprising fullerenes and derivatives thereof |
WO2009017700A1 (en) * | 2007-07-27 | 2009-02-05 | The Regents Of The University Of California | Polymer electronic devices by all-solution process |
WO2009086210A2 (en) * | 2007-12-21 | 2009-07-09 | Plextronics, Inc. | Organic photovoltaic devices comprising fullerenes and derivatives thereof and improved methodes of making fullerene derivatives |
US20100012178A1 (en) * | 2008-07-17 | 2010-01-21 | The Regents Of The University Of California | Solution processable material for electronic and electro-optic applications |
WO2010102178A2 (en) * | 2009-03-06 | 2010-09-10 | University Of Florida Research Foundation, Inc. | Air stable organic-inorganic nanoparticles hybrid solar cells |
WO2011068968A2 (en) * | 2009-12-02 | 2011-06-09 | University Of South Florida | Transparent contacts organic solar panel by spray |
JP2011119648A (ja) | 2009-08-04 | 2011-06-16 | Mitsubishi Chemicals Corp | 光電変換素子及びこれを用いた太陽電池 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5444743B2 (ja) * | 2009-02-03 | 2014-03-19 | コニカミノルタ株式会社 | 有機光電変換素子 |
US20100276071A1 (en) * | 2009-04-29 | 2010-11-04 | Solarmer Energy, Inc. | Tandem solar cell |
TWI422525B (zh) * | 2010-09-10 | 2014-01-11 | Univ Nat Chiao Tung | 可交聯之富勒烯衍生物及其反式結構有機太陽能電池 |
-
2012
- 2012-11-06 WO PCT/JP2012/007114 patent/WO2013069261A1/ja active Application Filing
- 2012-11-06 JP JP2013542837A patent/JPWO2013069261A1/ja active Pending
- 2012-11-06 EP EP12846834.5A patent/EP2779262A4/en not_active Withdrawn
- 2012-11-06 CN CN201280054787.9A patent/CN103931008A/zh active Pending
-
2014
- 2014-05-02 US US14/268,167 patent/US20140238482A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10167994A (ja) | 1996-12-09 | 1998-06-23 | Mitsubishi Chem Corp | 炭素クラスター誘導体 |
JPH11255509A (ja) | 1998-03-09 | 1999-09-21 | Mitsubishi Chemical Corp | C60誘導体 |
JPH11255508A (ja) | 1998-03-09 | 1999-09-21 | Mitsubishi Chemical Corp | C70誘導体 |
JP2002241323A (ja) | 2001-02-20 | 2002-08-28 | Mitsubishi Chemicals Corp | 炭素クラスターアニオン及びこれを含む金属錯体 |
JP2003196881A (ja) | 2001-09-03 | 2003-07-11 | Mitsui Chemicals Inc | フラーレン系色素及びその用途 |
JP2006073583A (ja) | 2004-08-31 | 2006-03-16 | Toray Ind Inc | 光電変換素子用材料およびこれを用いた光電変換素子 |
WO2008018931A2 (en) * | 2006-06-13 | 2008-02-14 | Plextronics, Inc. | Organic photovoltaic devices comprising fullerenes and derivatives thereof |
WO2009017700A1 (en) * | 2007-07-27 | 2009-02-05 | The Regents Of The University Of California | Polymer electronic devices by all-solution process |
WO2009086210A2 (en) * | 2007-12-21 | 2009-07-09 | Plextronics, Inc. | Organic photovoltaic devices comprising fullerenes and derivatives thereof and improved methodes of making fullerene derivatives |
US20100012178A1 (en) * | 2008-07-17 | 2010-01-21 | The Regents Of The University Of California | Solution processable material for electronic and electro-optic applications |
WO2010102178A2 (en) * | 2009-03-06 | 2010-09-10 | University Of Florida Research Foundation, Inc. | Air stable organic-inorganic nanoparticles hybrid solar cells |
JP2011119648A (ja) | 2009-08-04 | 2011-06-16 | Mitsubishi Chemicals Corp | 光電変換素子及びこれを用いた太陽電池 |
WO2011068968A2 (en) * | 2009-12-02 | 2011-06-09 | University Of South Florida | Transparent contacts organic solar panel by spray |
Non-Patent Citations (8)
Title |
---|
"Quarterly Chemistry Survey", 1999 |
A. J. BARD, ELECTOCHEMICAL METHODS: FUNDAMENTALS AND APPLICATIONS |
ORGANIC ELECTRONICS, vol. 9, 2008, pages 656 - 660 |
SOL. ENERGY MATER. SOL. CELLS, vol. 86, 2005, pages 499 - 516 |
SOL. ENERGY MATER. SOL. CELLS, vol. 92, 2008, pages 1476 - 1482 |
SOL. ENERGY MATER. SOL. CELLS, vol. 94, 2010, pages 1831 - 1834 |
SOL. ENERGY MATER. SOL. CELLS, vol. 95, 2011, pages 1382 - 1388 |
T. C. NGUYEN: "Electronic Properties of Conjugated Polyelectrolyte Thin Film", J. AM. CHEM. SOC., vol. 130, 2008, pages 10042 - 10043 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150194607A1 (en) * | 2012-06-26 | 2015-07-09 | Toray Industries, Inc. | Photovoltaic element |
WO2015087917A1 (ja) * | 2013-12-11 | 2015-06-18 | 積水化学工業株式会社 | 薄膜太陽電池及び薄膜太陽電池の製造方法 |
JP2018107350A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社リコー | 光電変換素子 |
JP7246126B2 (ja) | 2016-12-27 | 2023-03-27 | 株式会社リコー | 光電変換素子 |
JP2020532049A (ja) * | 2017-08-16 | 2020-11-05 | ナノシス・インク. | 向上した分散性及び改良された性能を有するpegベースのリガンド |
JP7194168B2 (ja) | 2017-08-16 | 2022-12-21 | ナノシス・インク. | 向上した分散性及び改良された性能を有するpegベースのリガンド |
Also Published As
Publication number | Publication date |
---|---|
EP2779262A1 (en) | 2014-09-17 |
EP2779262A4 (en) | 2015-10-07 |
JPWO2013069261A1 (ja) | 2015-04-02 |
US20140238482A1 (en) | 2014-08-28 |
CN103931008A (zh) | 2014-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013069261A1 (ja) | 光電変換素子およびその製造方法 | |
JP5681608B2 (ja) | 光電変換素子およびその製造方法 | |
JP2013058714A5 (ja) | ||
WO2013145775A1 (ja) | 有機薄膜太陽電池モジュールおよびその製造方法 | |
JP5319962B2 (ja) | 有機薄膜光電変換素子およびその製造方法 | |
US9349965B2 (en) | Photoelectric conversion material, film containing the material, photoelectric conversion device, method for preparing photoelectric conversion device, method for using photoelectric conversion device, photosensor and imaging device | |
JP4825925B2 (ja) | 光電変換素子及びその製造方法、光センサ、並びに撮像素子及びそれらの駆動方法 | |
JP5329849B2 (ja) | 液晶性有機半導体材料および有機電子デバイス | |
KR101574379B1 (ko) | 광전 변환 소자, 그 제조 방법, 광센서, 촬상 디바이스 및 그들의 구동 방법 | |
JP5216279B2 (ja) | 有機半導体材料、該材料を含む膜、有機電子デバイス及び赤外色素組成物 | |
JP5205085B2 (ja) | 有機光電変換材料および有機薄膜光電変換素子 | |
JP5124620B2 (ja) | 光電変換素子及びその製造方法並びに撮像素子 | |
KR20100130572A (ko) | 광전 변환 소자 및 촬상 소자 | |
JP5207783B2 (ja) | 軸配位子を有するフタロシアニン化合物からなるn型有機半導体材料 | |
JP5381748B2 (ja) | 有機光電変換素子、太陽電池及び光センサアレイ | |
JP2007288151A (ja) | フタロシアニン化合物、並びにそれを用いた半導体及び電子素子 | |
JP2009081309A (ja) | 有機半導体組成物、及びそれを用いた有機電子デバイス | |
JP2009081424A (ja) | n型有機半導体単結晶を含む電子素子 | |
JP2017139376A (ja) | 光電変換素子 | |
JP2011139071A (ja) | 光電変換素子及びその製造方法並びに撮像素子 | |
JP2012243873A (ja) | 膜、膜の製造方法、及び光電変換素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12846834 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013542837 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2012846834 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012846834 Country of ref document: EP |