WO2013015012A1 - 半導体加工シート用基材フィルム、半導体加工シート及び半導体装置の製造方法 - Google Patents

半導体加工シート用基材フィルム、半導体加工シート及び半導体装置の製造方法 Download PDF

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WO2013015012A1
WO2013015012A1 PCT/JP2012/063763 JP2012063763W WO2013015012A1 WO 2013015012 A1 WO2013015012 A1 WO 2013015012A1 JP 2012063763 W JP2012063763 W JP 2012063763W WO 2013015012 A1 WO2013015012 A1 WO 2013015012A1
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Prior art keywords
semiconductor
resin
base film
adhesive layer
processed sheet
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PCT/JP2012/063763
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English (en)
French (fr)
Japanese (ja)
Inventor
田矢　直紀
公史 上田
市川　功
正啓 古館
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リンテック株式会社
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Priority to KR1020147000464A priority Critical patent/KR101908390B1/ko
Priority to JP2013525608A priority patent/JP6012602B2/ja
Publication of WO2013015012A1 publication Critical patent/WO2013015012A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04—Homopolymers or copolymers of ethene
    • C08L23/08—Copolymers of ethene
    • C08L23/0807—Copolymers of ethene with unsaturated hydrocarbons only containing more than three carbon atoms
    • C08L23/0815—Copolymers of ethene with aliphatic 1-olefins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04—Homopolymers or copolymers of ethene
    • C08L23/08—Copolymers of ethene
    • C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
    • C08L23/0869—Acids or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
    • C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
    • C09J123/04—Homopolymers or copolymers of ethene
    • C09J123/08—Copolymers of ethene
    • C09J123/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
    • C09J123/0869—Acids or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/006—Presence of polyolefin in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Definitions

  • the present invention relates to a semiconductor processed sheet used for semiconductor processing, for example, dicing and die bonding, a base film used for the semiconductor processed sheet, and a method for manufacturing a semiconductor device using them.
  • Semiconductor wafers such as silicon and gallium arsenide, and various packages (hereinafter, these may be collectively referred to as “objects to be cut”) are manufactured in a large diameter state. And then separated (pickup) and then transferred to the next mounting step. At this time, an object to be cut such as a semiconductor wafer is attached to a pressure-sensitive adhesive sheet in advance, and is subjected to dicing, cleaning, drying, expanding, pick-up, and mounting processes.
  • a dicing sheet in which an adhesive layer is formed on a base film is used as a semiconductor processing sheet in a process from a dicing process of a workpiece to a pickup process. Specifically, the object to be cut is subjected to dicing while being fixed to the dicing sheet via the adhesive layer, and the chip after dicing is picked up from the adhesive layer of the dicing sheet.
  • a dicing die-bonding sheet may be used as a semiconductor processed sheet having both a dicing function and a function for bonding chips.
  • the object to be cut is subjected to dicing while being fixed to the base film via the adhesive layer, and the chip after dicing is picked up together with the adhesive layer from the base film.
  • the adhesive layer attached to the chip is used to bond (mount) the chip to a substrate or the like. Examples of such a dicing die bonding sheet include those disclosed in Patent Documents 1 to 3.
  • the adhesive layer and the base film adhere to each other over time, and as a result, the peelability between the base film and the adhesive layer is improved. In some cases, the chip could not be satisfactorily picked up.
  • the present invention has been made in view of the above circumstances, and has a good pick-up performance and can suppress a deterioration of the pick-up performance over time and a base film for a semiconductor processed sheet and a semiconductor
  • An object is to provide a processed sheet.
  • the present invention is a base film for a semiconductor processed sheet comprising a single layer or multiple layers of resin layers, wherein at least one of the resin layers has a resin density of 0.00. It is a resin layer (A) comprising a resin composition containing 870 to 0.900 g / cm 3 and an olefin resin having a heat flow rate of 2.5 W / g or less at a melting peak of 10 to 70% by mass.
  • a base film for a semiconductor processed sheet is provided (Invention 1).
  • the semiconductor processed sheet according to the present invention can be preferably used particularly as a dicing / die bonding sheet, but is not limited thereto.
  • what has another base material and adhesive layer for sticking a ring frame is also contained in the semiconductor processed sheet which concerns on this invention.
  • the “sheet” in the present invention includes the concept of “tape”.
  • the base film for a semiconductor processed sheet according to the invention (Invention 1) has a good pickup performance by including the resin layer (A) made of the resin composition, and the pickup performance is lowered over time. Can be suppressed.
  • the base film for a semiconductor processed sheet according to the invention includes the resin layer (A) and a resin layer (B) made of a material other than the resin composition constituting the resin layer (A). It may consist of two layers (Invention 2).
  • the heat of fusion ⁇ H of the olefin resin is preferably 85.0 J / g or less (Invention 3).
  • the resin composition constituting the resin layer (A) is preferably composed of the olefin resin and an olefin resin other than the olefin resin (Invention 4). .
  • the softening temperature of the resin layer (A) is preferably 90 to 120 ° C. (Invention 5).
  • the resin layer (B) is preferably made of a resin composition containing ethylene- (meth) acrylic acid copolymer as a main component (Invention 6).
  • the content of (meth) acrylic acid as a constituent in the ethylene- (meth) acrylic acid copolymer of the resin layer (B) is preferably 5 to 20% by mass ( Invention 7).
  • the base film for a semiconductor processing sheet according to the above inventions is a base film for a semiconductor processing sheet comprising a base film and an adhesive layer laminated on one side of the base film. (Invention 8).
  • the adhesive layer is preferably composed of an adhesive composition containing an acrylic polymer, an epoxy resin and a curing agent (Invention 9).
  • this invention provides the semiconductor processed sheet provided with the said base film for semiconductor processed sheets (invention 1-9) and the adhesive bond layer laminated
  • the adhesive layer is preferably composed of an adhesive composition containing an acrylic polymer, an epoxy resin and a curing agent (Invention 11).
  • the resin layer (A) in the base film for a semiconductor processed sheet is in contact with the adhesive layer (Invention 12).
  • this invention sticks the said semiconductor processing sheet to a semiconductor wafer via the said adhesive bond layer of the semiconductor processing sheet provided with the base film and the adhesive bond layer laminated
  • a semiconductor processed sheet is provided (Invention 13), characterized in that it is a base film (Invention 1 to 9).
  • the present invention provides a process for attaching the semiconductor processed sheet (Inventions 10 to 12) to a semiconductor wafer through the adhesive layer, and then cutting the semiconductor wafer into semiconductor chips; The process of peeling both at the interface between the base film and the adhesive layer to form a chip with the adhesive layer, and bonding the chip with the adhesive layer to the circuit board via the adhesive layer
  • a method of manufacturing a semiconductor device comprising: a step of performing (Invention 14).
  • the base film for a semiconductor processed sheet and the semiconductor processed sheet according to the present invention have good pickup performance and can suppress the deterioration of the pickup performance over time.
  • FIG. 1 is an example of a cross-sectional view of a semiconductor processed sheet according to the first embodiment of the present invention.
  • the semiconductor processed sheet 1 which concerns on this embodiment is equipped with the base film 2 and the adhesive bond layer 3 laminated
  • the semiconductor processed sheet 1 before using the semiconductor processed sheet 1, in order to protect the adhesive layer 3, it is preferable to laminate a peelable release sheet on the exposed surface (the upper surface in FIG. 1) of the adhesive layer 3.
  • the semiconductor processed sheet 1 can take any shape such as a tape shape or a label shape.
  • the base film 2 in this embodiment consists of a single layer resin layer (A).
  • This resin layer (A) has a resin density of 0.870 to 0.900 g / cm 3 and a heat flow rate at the melting peak of 2.5 W / g or less (hereinafter referred to as “olefin resin D”).
  • olefin resin D a resin density of 0.870 to 0.900 g / cm 3 and a heat flow rate at the melting peak of 2.5 W / g or less.
  • olefin resin D a resin composition containing 10 to 70% by mass is molded.
  • the resin density in this specification is a value obtained by measurement according to JIS K7112.
  • the heat flow rate at the melting peak is a value obtained by a differential scanning calorimeter (DSC) (in the test example, model number: Q2000 manufactured by TA Instruments Inc.).
  • DSC differential scanning calorimeter
  • the sample is heated from ⁇ 40 ° C. to 250 ° C. at a rate of 20 ° C./min, rapidly cooled to ⁇ 40 ° C., and again raised to 250 ° C. at a rate of 20 ° C./min.
  • the mixture is heated and held at 250 ° C. for 5 minutes, and then cooled to ⁇ 40 ° C. at a rate of 20 ° C./min to obtain a melting curve showing a melting peak. From the obtained melting curve, the heat flow rate at the melting peak and A heat of fusion ⁇ H described later is calculated.
  • a semiconductor processed sheet 1 has good releasability between the base film 2 and the adhesive layer 3, that is, has good pickup performance, and can suppress deterioration of the pickup performance over time.
  • the reason why such an effect is obtained is not necessarily clear, but it is considered that the crystallinity of the olefin resin D, which is included in the resin composition and defines the density and the heat flow rate at the melting peak, contributes.
  • the density of the olefin resin D in the present embodiment is 0.870 to 0.900 g / cm 3 , preferably 0.890 to 0.900 g / cm 3 , and particularly preferably 0.895 to 0.995 g / cm 3. 0.900 g / cm 3 .
  • the density of the olefinic resin D is less than 0.870 g / cm 3 , the resin composition containing the olefinic resin D is tacky. Therefore, when the resin composition is molded, clogging occurs in the hopper portion, or the molded film If the film is wound, troubles such as blocking of the films will occur.
  • the heat flow rate at the melting peak of the olefin resin D is 2.5 W / g or less as described above, and preferably 2.3 W / g or less.
  • the minimum of the heat flow rate in the melting peak of the olefin resin D in this embodiment is 1.0 W / g.
  • the heat flow rate at the melting peak is 1.0 W / g or less, the surface of the resin layer (A) starts to become sticky, and when the resin composition is molded or used for forming an adhesive layer on the molded base film 2 When the coating liquid is applied to form the adhesive layer 3, the handling property may be significantly reduced.
  • the heat of fusion ⁇ H of the olefin resin D in the present embodiment is preferably 85.0 J / g or less, particularly preferably 83.0 J / g or less, and more preferably 80.0 J / g or less. Preferably there is. If the heat of fusion ⁇ H of the olefin resin D exceeds 85.0 J / g, good pickup performance may not be obtained.
  • the lower limit of the heat of fusion ⁇ H is naturally determined by the relationship with the density and the skeleton of each resin, but is theoretically preferably 0.
  • the olefin resin D is preferably a homopolymer or a copolymer obtained by polymerizing one or more selected from olefin monomers having a heat flow rate at the density and melting peak within the above ranges.
  • olefin monomers include olefin monomers having 2 to 18 carbon atoms and ⁇ -olefin monomers having 3 to 18 carbon atoms.
  • olefin monomers examples include olefin monomers having 2 to 8 carbon atoms such as ethylene, propylene, 2-butene and octene; propylene, 1-butene, 4-methyl-1-pentene, 1- And ⁇ -olefin monomers such as hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene and 1-octadecene.
  • the olefin resin D which is a homopolymer or copolymer of these olefin monomers, can be used singly or in combination of two or more.
  • the olefin resin D is preferably an ethylene homopolymer or copolymer, more preferably a copolymer of ethylene and an ⁇ -olefin monomer.
  • ⁇ -olefin monomer examples include those described above.
  • ethylene homopolymer or copolymer hereinafter referred to as “polyethylene”) containing 60 to 100 mass%, particularly 70 to 99.5 mass% of ethylene as a monomer unit. Is preferred).
  • VLDPE ultra low density polyethylene
  • Such ultra-low density polyethylene is easily available as the olefin resin D that satisfies the above conditions.
  • the resin composition constituting the resin layer (A) contains 8 to 70% by mass of the olefin resin D, preferably 10 to 65% by mass, and particularly preferably 10 to 50% by mass.
  • the content of the olefin resin D is less than 8% by mass, the above-described good pickup performance and its continuity effect cannot be obtained.
  • the elasticity modulus of the base film 2 obtained will fall when content of the said olefin resin D exceeds 70 mass%, when performing secondary processing etc., a problem will arise regarding handling property. .
  • the content of the olefin resin D exceeds 70% by mass, blocking occurs in the wound base film 2 due to the low density of the olefin resin D, and the surface of the base film 2 is blocked. In addition to leaving marks, handling properties when the base film 2 or the semiconductor processed sheet 1 is unwound from a roll may be deteriorated.
  • the resin layer (A) contains 8 to 70% by mass of the olefin resin D.
  • an olefin resin other than the olefin resin D (hereinafter referred to as “olefin system”). It may be preferable to contain “resin E”.
  • the olefin resin E is a resin that does not satisfy one or both of the requirement that the resin density is 0.870 to 0.900 g / cm 3 and the requirement that the heat flow rate at the melting peak is 2.5 W / g or less.
  • the olefin resin E include polyethylene (ethylene homopolymer or copolymer containing 60 to 100% by mass, particularly 70 to 99.5% by mass of ethylene as a monomer unit), propylene-butene copolymer.
  • a polymer or the like having a density of 0.910 g / cm 3 or more and less than 0.920 g / cm 3 is preferable.
  • ethylene copolymer for example, ethylene-propylene copolymer, ethylene-butene copolymer and the like are preferable.
  • polyethylene having a density of 0.915 to 0.918 g / cm 3 (hereinafter sometimes referred to as “low density polyethylene”) is more preferable.
  • Such an olefin resin E such as low density polyethylene has an advantage of high compatibility with the olefin resin D.
  • the thickness of the base film 2 is usually 20 to 500 ⁇ m, preferably 30 to 200 ⁇ m, more preferably 40 to 150 ⁇ m.
  • the base film 2 can be manufactured by a conventional method.
  • the olefin resin D and the olefin resin E are kneaded, and the pellets are directly formed from the kneaded material or once after pellets are formed by extrusion or the like. can do.
  • the temperature at the time of kneading is preferably 180 to 230 ° C.
  • the resin composition constituting the base film 2 (in this embodiment, the resin layer (A)) preferably has a softening temperature of 90 to 120 ° C., particularly preferably 100 to 115 ° C.
  • the softening temperature of the resin layer (A) is 90 ° C. or higher, the base film 2 is less likely to be blocked, and good handling properties of the base film 2 or the semiconductor processed sheet 1 can be ensured.
  • the softening temperature of the resin layer (A) is 120 ° C. or higher, the base film 2 is necked in the expanding process after dicing, and the chip interval may not be uniformly expanded.
  • the softening temperature in this specification is a value obtained by a Koka type flow tester (in the test example, Shimadzu Corporation, model number: CFT-100D is used). Specifically, when the load was 9.81 N, a die having a hole shape of ⁇ 2.0 mm and a length of 5.0 mm was used and measurement was performed at a temperature rising rate of 10 ° C./min, the stroke began to change. The temperature is defined as the softening temperature.
  • the material constituting the adhesive layer 3 is not particularly limited as long as it has both a wafer fixing function and a die bonding function.
  • Examples of the material constituting the adhesive layer 3 include those composed of a thermoplastic resin and a low molecular weight thermosetting adhesive component, and materials composed of a B-stage (semi-cured) thermosetting adhesive component. Used.
  • Thermoplastic resins include acrylic polymer, polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, ethylene (meth) acrylic acid copolymer, ethylene (meth) acrylic acid.
  • Thermosetting adhesive components include epoxy resins, polyimide resins, phenolic resins, silicone resins, cyanate resins, bismaleimide triazine resins, allylated polyphenylene ether resins (thermosetting PPE), formaldehyde resins, Saturated polyester or a copolymer thereof may be used, and among them, an epoxy resin is preferable from the viewpoint of adhesiveness.
  • a material constituting the adhesive layer 3 a material containing an acrylic polymer (a), an epoxy resin (b), and a curing agent (c) is particularly preferable.
  • the weight average molecular weight (Mw) of the acrylic polymer (a) is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. If the Mw of the acrylic polymer (a) is too low, the peelability between the adhesive layer 3 and the base film 2 is lowered, and chip pick-up failure may occur. If the Mw of the acrylic polymer (a) is too high, the adhesive layer 3 may not be able to follow the unevenness of the adherend, which may cause generation of voids and the like.
  • the weight average molecular weight (Mw) in this specification is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method.
  • the glass transition temperature (Tg) of the acrylic polymer (a) is preferably ⁇ 60 to 70 ° C., and more preferably ⁇ 30 to 50 ° C. If the Tg of the acrylic polymer (a) is too low, the peelability between the adhesive layer 3 and the base film 2 is lowered, and chip pick-up failure may occur. If the Tg of the acrylic polymer (a) is too high, the adhesive force for fixing the wafer may be insufficient.
  • Examples of the monomer constituting the acrylic polymer (a) include a (meth) acrylic acid ester monomer or a derivative thereof. More specifically, for example, methyl (meth) acrylate, ethyl (meth) acrylate, ( (Meth) acrylic acid alkyl esters having 1 to 18 carbon atoms of alkyl groups such as meth) propyl acrylate and butyl (meth) acrylate; (meth) acrylic cycloalkyl esters, (meth) acrylic acid benzyl esters, (Meth) acrylic acid esters having a cyclic skeleton such as isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, and imide (meth) acrylate Hydroxymethyl (meth) acrylate DOO, 2-hydroxyethyl (meth) acrylate, 2-
  • the acrylic polymer (a) it is preferable to use at least a hydroxyl group-containing (meth) acrylic acid ester as a monomer constituting the acrylic polymer (a) from the viewpoint of compatibility with the epoxy resin (b).
  • the structural unit derived from the hydroxyl group-containing (meth) acrylic acid ester is preferably contained in the range of 1 to 20% by mass, and contained in the range of 3 to 15% by mass. It is more preferable.
  • the acrylic polymer (a) is preferably a copolymer of a (meth) acrylic acid alkyl ester and a hydroxyl group-containing (meth) acrylic ester.
  • the acrylic polymer (a) may be copolymerized with monomers such as vinyl acetate, acrylonitrile, styrene and the like within a range not impairing the object of the present invention.
  • Epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, dicyclopentadiene (DCPD) type epoxy resin, biphenyl type epoxy resin, Epoxys containing two or more functional groups in the structural unit such as triphenolmethane type epoxy resins, heterocyclic type epoxy resins, stilbene type epoxy resins, condensed ring aromatic hydrocarbon modified epoxy resins, and halides thereof. Resin. These epoxy resins may be used individually by 1 type, and may use 2 or more types together.
  • the epoxy equivalent of the epoxy resin is not particularly limited, but is preferably 150 to 1000 (g / eq).
  • the epoxy equivalent is a value measured according to JIS K7236: 2008.
  • the content of the epoxy resin (b) is preferably 1 to 1500 parts by mass and more preferably 3 to 1000 parts by mass with respect to 100 parts by mass of the acrylic polymer (a). If the content of the epoxy resin (b) is less than the above range, sufficient adhesive strength may not be obtained. If the content of the epoxy resin (b) exceeds the above range, the film forming property is lowered. There is a possibility that it is difficult to form the adhesive layer 3.
  • the curing agent (c) functions as a curing agent for the epoxy resin (b).
  • the curing agent (c) include compounds having two or more functional groups capable of reacting with an epoxy group in the molecule, such as phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, acids. An anhydride group etc. are mentioned. In these, a phenolic hydroxyl group, an amino group, and an acid anhydride group are preferable, and a phenolic hydroxyl group and an amino group are more preferable.
  • curing agent (c) examples include phenolic thermosetting agents such as novolak type phenolic resin, dicyclopentadiene type phenolic resin, triphenolmethane type phenolic resin and aralkylphenolic resin; amine type heat such as DICY (dicyandiamide).
  • phenolic thermosetting agents such as novolak type phenolic resin, dicyclopentadiene type phenolic resin, triphenolmethane type phenolic resin and aralkylphenolic resin
  • amine type heat such as DICY (dicyandiamide).
  • a curing agent is mentioned.
  • curing agent (c) may be used individually by 1 type, and may use 2 or more types together.
  • the content of the curing agent (c) is preferably 0.1 to 500 parts by mass and more preferably 1 to 200 parts by mass with respect to 100 parts by mass of the epoxy resin (b).
  • curing agent (c) is less than the said range, the adhesive bond layer 3 which has sufficient adhesive force may not be obtained.
  • the content of the curing agent (c) exceeds the above range, the moisture absorption rate of the adhesive layer 3 is increased, and the reliability of the semiconductor package may be lowered.
  • the material constituting the adhesive layer 3 may include a curing accelerator, a coupling agent, a crosslinking agent, an energy ray polymerizable compound, a photoinitiator, a plasticizer, and an antistatic agent, as desired.
  • a curing accelerator such as an agent, an antioxidant, a pigment, a dye, and an inorganic filler may be contained. Each of these additives may be included singly or in combination of two or more.
  • the curing accelerator is used to adjust the curing rate of the adhesive composition.
  • a hardening accelerator the compound which can accelerate
  • Specific examples of such compounds include tertiary amines, imidazoles such as 2-phenyl-4,5-di (hydroxymethyl) imidazole, organic phosphines, and tetraphenylboron salts.
  • the coupling agent has a function of improving the adhesiveness and adhesion to the adherend of the adhesive composition. Moreover, the water resistance of the said hardened
  • the coupling agent is preferably a compound having a group that reacts with the functional group of the acrylic polymer (a) and the epoxy resin (b).
  • a silane coupling agent is preferable.
  • the crosslinking agent is for adjusting the cohesive force of the adhesive layer 3.
  • a crosslinking agent of the said acrylic polymer (a) For example, an organic polyvalent isocyanate compound, an organic polyvalent imine compound, etc. are mentioned.
  • the energy beam polymerizable compound is a compound that polymerizes and cures when irradiated with energy rays such as ultraviolet rays and electron beams.
  • energy rays such as ultraviolet rays and electron beams.
  • an acrylate compound is preferable, and a compound having at least one polymerizable double bond in the molecule is particularly preferable.
  • acrylate compounds include dicyclopentadiene dimethoxydiacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate.
  • the weight average molecular weight of the acrylate compound is usually 100 to 30,000, preferably about 300 to 10,000.
  • the content of the energy ray polymerizable compound is usually 1 to 400 parts by weight, preferably 3 to 300 parts per 100 parts by weight of the acrylic polymer (a). Part by mass, more preferably 10 to 200 parts by mass.
  • the photoinitiator can reduce the polymerization curing time and the energy beam irradiation amount when polymerized and cured by irradiation with energy rays.
  • a well-known thing can be used as a photoinitiator.
  • the thickness of the adhesive layer 3 is usually 3 to 100 ⁇ m, preferably about 5 to 80 ⁇ m.
  • the semiconductor processed sheet 1 as described above can be manufactured by a conventional method.
  • a coating agent containing a material constituting the adhesive layer 3 and optionally further containing a solvent is prepared, and a roll coater, knife coater, roll knife coater, air knife coater, die coater, bar coater, gravure coater, curtain coater. It can be manufactured by applying to one side of the base film 2 with a coating machine such as a coating machine and drying to form the adhesive layer 3. Or after apply
  • the semiconductor processed sheet 1 described above has good peelability between the base film 2 and the adhesive layer 3, that is, good pick-up performance, and suppresses the deterioration of the pick-up performance over time.
  • the semiconductor processed sheet 1 according to the present embodiment can be preferably used as a dicing die bonding sheet used in a dicing process and a die bonding process.
  • FIG. 2 is a cross-sectional view of a semiconductor processed sheet 10 according to the second embodiment of the present invention.
  • the semiconductor processed sheet 10 includes a base film 20 composed of two resin layers, and an adhesive layer laminated on one side (upper surface in FIG. 2) of the base film 20. 3 is provided.
  • the base film 20 in this embodiment includes a resin layer (A) located on the side in contact with the adhesive layer 3 and a resin layer (B) located on the side not in contact with the adhesive layer 3.
  • the resin layer (A) is made of the same material as the resin layer (A) in the semiconductor processed sheet 1 according to the first embodiment.
  • the thickness of the resin layer (A) in the present embodiment is preferably 10 to 120 ⁇ m, more preferably 20 to 100 ⁇ m, and particularly preferably 30 to 80 ⁇ m.
  • the resin layer (B) in the present embodiment is for imparting expanding performance to the base film 20. That is, the base film 20 composed of the resin layer (A) and the resin layer (B) has good pickup performance and is excellent in expandability.
  • the resin layer (B) is not particularly limited as long as it is made of a resin having excellent extensibility.
  • a resin include a copolymer obtained by polymerizing an olefin monomer and one or more selected from acrylic monomers.
  • the resin layer (B) is preferably made of a resin composition mainly composed of an ethylene- (meth) acrylic acid copolymer excellent in extensibility.
  • the ethylene component in the ethylene- (meth) acrylic acid copolymer gives good extensibility and expandability to the resin layer (B).
  • the “ethylene- (meth) acrylic acid copolymer” may be an ethylene-acrylic acid copolymer, an ethylene-methacrylic acid copolymer, or an ethylene-acrylic acid-methacrylic acid. A copolymer may also be used.
  • the content of (meth) acrylic acid as a constituent in the ethylene- (meth) acrylic acid copolymer is preferably 3 to 20% by mass, more preferably 4 to 15% by mass, and 5 to 12%. It is particularly preferable that the content is% by mass.
  • the content of (meth) acrylic acid in the ethylene- (meth) acrylic acid copolymer is less than 3% by mass, the crystallinity of the resin layer (B) becomes high, and the base film 20 is obtained during expansion after dicing. May be necked and it may be difficult to uniformly expand the chip interval.
  • the content of (meth) acrylic acid exceeds 20% by mass, the resin layer (B) itself may be sticky, and the semiconductor processed sheet 10 can be transported when dicing using the apparatus. There is a risk of disappearing.
  • the portion other than the structural unit derived from acrylic acid and / or methacrylic acid is basically a structural unit derived from ethylene, but the semiconductor processing according to this embodiment As long as the purpose of the sheet 10 is not impaired, an olefin monomer other than ethylene, an ⁇ -olefin such as propylene, an acrylic monomer other than (meth) acrylic acid, methyl (meth) acrylate, ethyl (meth) A structural unit derived from an acrylate ester, an alkyl vinyl ester or the like may be contained. Such structural units derived from other monomers may be contained in the ethylene- (meth) acrylic acid copolymer in a proportion of less than 10% by mass.
  • the molecular weight of the ethylene- (meth) acrylic acid copolymer is preferably 10,000 to 1,000,000 in terms of weight average molecular weight (Mw), and particularly preferably 50,000 to 500,000. preferable.
  • the main component of the resin composition constituting the resin layer (B) may be one type of ethylene- (meth) acrylic acid copolymer or two or more types of ethylene- (meth) acrylic acid copolymers. May be blended.
  • the resin composition constituting the resin layer (B) is ethylene-butyl acrylate, as long as the purpose of the semiconductor processed sheet 10 according to the present embodiment is not impaired.
  • An ethylene-vinyl acetate, an ethylene-propylene copolymer, an ethylene-butene copolymer and the like may be contained.
  • the content of these resins is preferably 30% by mass or less, and particularly preferably 10% by mass or less, in the resin composition.
  • the resin layer (B) is not limited to the above materials, and examples thereof include polyolefins such as polyethylene, polypropylene and polybutene; ethylene such as ethylene-vinyl acetate copolymer and ethylene- (meth) acrylic acid ester. Copolymer; Polyester such as polyethylene terephthalate and polyethylene naphthalate; Polyurethane; Polyvinyl chloride; Polyamide, etc.
  • polyolefins such as polyethylene, polypropylene and polybutene
  • ethylene such as ethylene-vinyl acetate copolymer and ethylene- (meth) acrylic acid ester. Copolymer
  • Polyester such as polyethylene terephthalate and polyethylene naphthalate
  • Polyurethane Polyvinyl chloride
  • Polyamide etc.
  • the thickness of the resin layer (B) is preferably 40 to 120 ⁇ m, particularly preferably 50 to 100 ⁇ m. Moreover, it is more preferable that the thickness of the resin layer (B) is thicker than the thickness of the resin layer (A). When the thickness of the resin layer (B) is in the above range, good expanding performance can be imparted to the base film 20.
  • the base film 20 may be manufactured by simultaneously forming the resin layer (A) and the resin layer (B) by coextrusion or the like, or may be manufactured by forming each resin layer (A), (B). After the film formation, the resin layer (A) and the resin layer (B) may be laminated by an adhesive or the like.
  • the breaking elongation of the base film 20 in the present embodiment is preferably 100% or more, and particularly preferably 200% or more.
  • the base film 20 having a breaking elongation of 100% or more is not easily broken during the expanding step, and the chips formed by cutting the workpiece are easily separated.
  • the tensile elastic modulus of the base film 20 in the present embodiment is preferably 80 to 160 MPa.
  • the tensile elastic modulus is less than 80 MPa, when the wafer is attached to the semiconductor processed sheet 10 and fixed to the ring frame, the base film 20 is soft and may be loosened, which may cause a conveyance error.
  • the tensile modulus exceeds 160 MPa, the load applied during the expanding process must be increased, and thus there may be a problem that the semiconductor processed sheet 10 itself is peeled off from the ring frame.
  • the semiconductor processed sheet 10 in the semiconductor processed sheet 10 described above, by providing the resin layer (A), it has good peelability between the base film 20 and the adhesive layer 3, that is, good pickup performance, and the pickup performance. Is reduced over time. Moreover, the semiconductor processed sheet 10 which concerns on this embodiment has favorable expandability because the base film 20 consists of a resin layer (A) and a resin layer (B) as mentioned above.
  • the semiconductor processed sheet 10 according to the present embodiment can be preferably used as a dicing die bonding sheet used in a dicing process, an expanding process, and a die bonding process.
  • the base films 2 and 20 may be composed of three or more resin layers.
  • the resin layer in contact with the adhesive layer 3 is made of the same material as the resin layer (A).
  • Example 1 As the olefin resin D, ultra-low density polyethylene (manufactured by Sumitomo Chemical Co., Ltd., Excellen EUL731, density: 0.895 g / cm 3 , heat flow rate at melting peak: 1.4 W / g, heat of fusion: 69.5 J / g) 10 Low-density polyethylene (Sumitomo Chemical Co., Ltd., Sumikasen L705, density 0.918 g / cm 3 , heat flow at melting peak: 5.5 W / g, heat of fusion ⁇ H: 126.0 J / g) 90 parts by mass were melt-kneaded with a twin-screw kneader (manufactured by Toyo Seiki Seisakusho, Labo Plast Mill) to obtain an extrusion raw material for the resin layer (A).
  • a twin-screw kneader manufactured by Toyo Seiki Seisakusho, Labo Plast Mill
  • a resin composition mainly composed of an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel N0903HC, methacrylic acid content: 9.0% by mass) ) was prepared.
  • the extrusion raw material for the resin layer (A) and the extrusion raw material for the resin layer (B) are extruded using a small T-die extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., Labo Plast Mill).
  • a base film having a two-layer structure composed of a resin layer (A) having a thickness of 40 ⁇ m and a resin layer (B) having a thickness of 60 ⁇ m was obtained.
  • the obtained coating solution for forming the adhesive layer is applied to the surface of the resin layer (A) so that the film thickness after drying becomes 20 ⁇ m, and dried at 100 ° C. for 1 minute to form an adhesive layer. Then, a semiconductor processed sheet was produced.
  • Example 2 In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 30 parts by mass and the compounding quantity of the olefin resin E to 70 parts by mass. Thus, a semiconductor processed sheet was produced.
  • Example 3 In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 50 parts by mass and the compounding quantity of the olefin resin E to 50 parts by mass. Thus, a semiconductor processed sheet was produced.
  • Example 4 In Example 3, the olefin resin D in the raw material for extrusion was used as ultra-low density polyethylene (Sumitomo Chemical Co., Ltd., Exelen VL-200, density 0.900 g / cm 3 , heat flow at melting peak: 2.0 W / g. , A processed semiconductor sheet was produced in the same manner as in Example 3 except that the heat of fusion was changed to ⁇ H79.1 J / g).
  • Example 5 In Example 2, except that the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel AN4225C, methacrylic acid content: 5.0% by mass), A semiconductor processed sheet was produced in the same manner as in Example 2.
  • an ethylene-methacrylic acid copolymer manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel AN4225C, methacrylic acid content: 5.0% by mass
  • Example 6 the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (Mitsui DuPont Polychemical Co., Ltd., Nucrel N1207C, methacrylic acid content: 12.0% by mass).
  • a semiconductor processed sheet was produced in the same manner as in Example 2.
  • Example 7 In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 60 parts by mass and the compounding quantity of the olefin resin E to 40 parts by mass. Thus, a semiconductor processed sheet was produced.
  • Example 8 In Example 2, the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel AN4214C, methacrylic acid content: 4.0% by mass). A semiconductor processed sheet was produced in the same manner as in Example 2.
  • Example 9 In Example 2, except that the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (Mitsui DuPont Polychemical Co., Ltd., Nucrel N1525, methacrylic acid content: 15.0% by mass) A semiconductor processed sheet was produced in the same manner as in Example 2.
  • an ethylene-methacrylic acid copolymer Mitsubishi Chemical Co., Ltd., Nucrel N1525, methacrylic acid content: 15.0% by mass
  • Example 10 In Example 2, the resin layer (B) is not extruded, and a base film having a thickness of 100 ⁇ m is formed only by the resin layer (A), and then an adhesive is formed on the base film in the same manner as in Example 1. Layers were formed to produce semiconductor processed sheets.
  • Example 1 it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of a resin layer (A) to 0 mass part and the compounding quantity of the olefin resin E to 100 mass parts. Thus, a semiconductor processed sheet was produced.
  • Example 2 In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 5 parts by mass and the compounding quantity of the olefin resin E to 95 parts by mass. Thus, a semiconductor processed sheet was produced.
  • Example 2 As the olefin resin D, an ultra-low density polyethylene (manufactured by Tosoh Corporation, LumiTac 43-1, density 0.905 g / cm 3 , heat flow rate at melting peak: 2.4 W / g, heat of fusion ⁇ H88.9J) / G), a semiconductor processed sheet was produced in the same manner as in Example 2.
  • an ultra-low density polyethylene manufactured by Tosoh Corporation, LumiTac 43-1, density 0.905 g / cm 3 , heat flow rate at melting peak: 2.4 W / g, heat of fusion ⁇ H88.9J) / G
  • Example 2 As the olefin resin D, an ultra-low density polyethylene (Prime Polymer, Evolue SP90100, density 0.890 g / cm 3 , heat flow at melting peak: 2.8 W / g, heat of fusion ⁇ H87.8 J / A semiconductor processed sheet was produced in the same manner as in Example 2 except that g) was used.
  • a polyethylene Principal Polymer, Evolue SP90100, density 0.890 g / cm 3 , heat flow at melting peak: 2.8 W / g, heat of fusion ⁇ H87.8 J /
  • Comparative Example 5 In Comparative Example 1, except that the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel N4214C, methacrylic acid content: 4.0% by mass) A semiconductor processed sheet was produced in the same manner as in Comparative Example 1.
  • Test Example 1 Evaluation of pickup performance
  • the semiconductor processed sheets produced in the examples and comparative examples were cut into 25 mm ⁇ 250 mm to prepare test pieces.
  • This test piece was attached to the ground surface of a # 2000 silicon wafer (200 mm diameter, 350 ⁇ m thick), and a 2 kg rubber roll was reciprocated once to pressure-bond both.
  • 180 ° peeling was performed at a speed of 300 mm / min using a universal type tensile tester (Orientec Co., Ltd., Tensilon), followed by adhesion.
  • the peel force between the agent layer and the substrate film was measured, and the value was defined as (initial value: f1 (mN / 25 mm)).
  • the semiconductor processed sheet was heated for 24 hours under the condition of 40 ° C. (40 ° C. constant temperature bath), then returned to room temperature, and the peeling force between the adhesive layer and the base film was measured in the same manner as described above. And its value (value after promotion: f2 (mN / 25 mm)). Both these values were introduced into the following equation, and the rate of change in peel force: R (%) was calculated.
  • the pick-up performance was ⁇ when R was 50% or less, ⁇ when R was more than 50% and 100% or less, and x when R was more than 100%.
  • the results are shown in Table 1.
  • R (f2-f1) ⁇ 100 / f1
  • Test Example 4 (Handling evaluation) The base film produced in Examples and Comparative Examples was wound up 100 m on a 3 inch diameter, 330 mm wide plastic tube to prepare an evaluation sample. The sample was stored in an atmosphere at 40 ° C. for 1 week, and the state when the sample was rewound again was evaluated according to the following criteria. The results are shown in Table 1. ⁇ : Can be unwound without resistance. ⁇ : Unwinding is possible, but partial blocking occurs, leaving marks on the sheet surface. X: Blocking occurs partially or entirely, and unwinding is not possible.
  • the base film for a semiconductor processed sheet and the semiconductor processed sheet according to the present invention are particularly suitable for use in a dicing / die bonding sheet.

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