WO2013006031A1 - A method of fabricating a nanocomposite thin film with metallic nanoparticles - Google Patents

A method of fabricating a nanocomposite thin film with metallic nanoparticles Download PDF

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Publication number
WO2013006031A1
WO2013006031A1 PCT/MY2012/000142 MY2012000142W WO2013006031A1 WO 2013006031 A1 WO2013006031 A1 WO 2013006031A1 MY 2012000142 W MY2012000142 W MY 2012000142W WO 2013006031 A1 WO2013006031 A1 WO 2013006031A1
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Prior art keywords
metallic
thin film
insulating layer
nanoparticles
film
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PCT/MY2012/000142
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French (fr)
Inventor
Daniel Bien Chia SHENG
Teh Aun SHIH
Lee Hing WAH
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Mimos Berhad
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Publication of WO2013006031A1 publication Critical patent/WO2013006031A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/18—Carbon
    • B01J21/185—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0215—Coating
    • B01J37/0225—Coating of metal substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0238—Impregnation, coating or precipitation via the gaseous phase-sublimation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds

Definitions

  • the present invention relates to a method of fabricating a nanocomposite thin film with metallic nanoparticles.
  • the method partially embeds metallic nanoparticles in a metallic thin film, in which the metallic thin film is deposited on a substrate by selective chemical vapor deposition (CVD).
  • CVD selective chemical vapor deposition
  • a nanocomposite is a multiphase material where one of the phases has dimensions less than lOOnm. Examples include a composite of nanoparticles embedded within a thin film (a nanocomposite thin film) and etc. Nanocomposite thin films are applied in a wide range of applications and devices such as magnetic storage devices, nanoelectronics, sensors and etc.
  • a method for fabricating a nanocompositc thin film with a plurality of metallic nanoparticles comprising depositing an insulating layer onto the surface of a substrate; depositing a metallic film on the surface of the insulating layer; annealing the metallic film, wherein annealing nucleates the metallic film to form the metallic nanoparticles on the insulating layer; and depositing a metallic thin film onto the insulating layer by a selective chemical vapour deposition technique, wherein depositing of the metallic thin film partially embeds the metallic nanoparticles within the metallic thin film, the surfaces of the metallic nanoparticles docs not absorb the metallic thin film; wherein at least patt of the outer surfaces of the metallic nanoparticles are exposed in the metallic thin film.
  • the insulating layer is made of an oxide material, a nitride material, or any other suitable material.
  • the substrate is made of a semiconductor material.
  • the deposition technique is a physical vapour deposition technique, a chemical vapour deposition technique, or any other suitable deposition technique.
  • the metallic film is not iron and comprises of a material selected from a periodic table consisting and not limited to gold, cobalt, iron, nickel, indium, platinum, tungsten, zinc and copper.
  • the metall ic thin film is made of iron.
  • the selective chemical vapour deposition of the metallic thin film is from a metal-organic iron pentacarbonyl [Fe(CO) 5 ] precursor, [0012]
  • the method is applicable as a catalyst material for growth of nanotube and nanowires.
  • the method is compatible with standard semiconductor fabrication processes, wafer fabrication processes, and etc. Further, a wafer fabrication processes can be completed in a single system without removing the wafer when the metallic nanoparticles and the metallic thin film are deposited with chemical vapour deposition techniques.
  • the nanocomposite thin film with the metallic nanoparticles is further annealed in an oxygen environment. Further, annealing oxidizes the metallic thin film to an iron oxide thin film and the metallic nanoparticle to metal oxide nanoparticle.
  • FIG. 1A-1D illustrates a process flow of integrating metallic nanoparticles in a thin film as one embodiment in the present invention
  • FIG. 2 exemplifies the surface area of the partially embedded metallic nanoparticles in the thin film.
  • FIG. 3 illustrates a process flow of oxidizing the partially embedded metallic nanoparticles in the thin film.
  • FIGs. 1A-1D illustrates a method of fabricating a nanoeomposite thin film 100 with a plurality of metallic nanoparticles 101 as one embodiment of the present invention.
  • the method comprises depositing an insulating layer 102 onto the surface of a substrate 103; depositing a metallic film 104 on the top of the insulating layer 102; annealing the metallic film 104 to nucleate the metallic film 104, forming the metallic nanoparticles 101 on the insulating layer 102; and depositing a metallic thin film 105 onto the insulating layer 102, partially embedding the metallic nanoparticles 101 within the insulating layer.
  • the method of fabricating the nanocomposite thin film 100 with metallic nanoparticles 101 leaves at least part of the outer surfaces of the metallic nanoparticles 101 exposed after depositing the metallic thin film 105.
  • the insulating layer 102 is deposited onto the surface of the substrate 103 by a deposition technique.
  • the deposition technique may be a physical vapour deposition (PVD) teciinique, a chemical vapour deposition (CVD) technique or any other suitable deposition techniques.
  • PVD physical vapour deposition
  • CVD chemical vapour deposition
  • Such deposition techniques are typically used for depositing a thin film of material onto another material.
  • the deposition technique can also control the thickness of the material deposition to within a few tens of nanometers.
  • the insulating layer 102 isolates the metallic nanoparticles 101 and the metallic thin film 105 from the substrate 103. Typically, both the insulating layer 102 and the substrate 103 are made of materials that are able to withstand high temperatures.
  • the insulating layer 102 is made of an oxide material, a nitride material, or any other suitable material.
  • the substrate 103 is made of a semiconductor material (e.g. silicon, etc.).
  • the metallic film 104 is also deposited onto the surface of the insulating layer 102 by the deposition technique.
  • the metallic film 104 is not iron and comprises of a material selected from a group consisting but not limited to gold, cobalt, iron, nickel, indium, platinum, tungsten, zinc, and copper.
  • the metallic film 104 is annealed in temperatures ranging from 200°C to 800°C. As both the insulating layer 102 and the substrate 103 are able to withstand against the high temperatures, annealing only nucleates the metallic film 104 to form the plurality of metallic nanoparticles 101 on the insulating layer 102.
  • the metallic film 104 is nucleated to form the metallic nanoparticles 101 on the insulating layer 102.
  • the metallic nanoparticles 101 arc typically of dimensions in a range between 1 to 100 nm.
  • selective CVD is used to deposit the metallic thin film 105 only onto the insulating layer 102 and partially embedding the metallic nanoparticles 101 within the metallic thin film 105.
  • the selective CVD enables fabrication of structures and films not defined by lithographic resolution.
  • Selective CVD results from an autocatatytic reaction once deposition of the metallic thin film 105 is initiated on the insulating layer 102.
  • the metallic thin film 105 is made of iron (Fc).
  • the selective CVD of the metallic thin film 105 is from a metal-organic iron pentacarbonyl [Fe(CO)sl precursor which occurs preferentially on insulating materials typically silicon dioxide or silicon nitride surfaces.
  • the reaction chemistry is for the Fe(CO) 3 takes place between 200oC to 400°C.
  • the chemical reaction equation of the Fe(CO)s is as follows:
  • the process is applicable in fabricating sensing elements. Having at least part of the outer surfaces of the metallic nanoparticles 101 exposed increases sensitivity and selectivity in the application. Therefore, the method of fabricating the nanocomposite thin film 100 with melailic nanoparticles 101 can be applied in sensors and the metallic nanoparticles 101 as sensing elements.
  • the method of fabricating the nanocomposite thin film 100 with metallic nanoparticles 101 is also applicable as a catalyst material for growth of nanotube and nanowires as one embodiment of the present invention.
  • the method of fabricatiug the nanocomposite thin film 100 is compatible with standard semiconductor fabrication processes.
  • the method is also compatible with a wafer fabrication process.
  • the wafer fabrication process can be completed in a single system without removing the wafer if both the metallic nanoparticles 101 and the metallic thin film 105 are deposited with CVD techniques.
  • FIG. 2 exemplifies the surface area of the nanocomposite thin film 100 with the metallic nanoparticles 101.
  • the metallic nanoparticles 101 are partially embedded within the metallic thin film 105 and at least part of its outer surfaces is exposed.
  • FIG. 1 exemplifies the surface area of the nanocomposite thin film 100 with the metallic nanoparticles 101.
  • the metallic nanoparticles 101 are partially embedded within the metallic thin film 105 and at least part of its outer surfaces is exposed.
  • FIG. 3 illustrates a process flow of oxidizing the nanocomposite thin film 100 with the metallic nanoparticles 101 as another embodiment of the present invention.
  • the nanocomposite thin film 100 can be further annealed in an oxygen environment- After annealing, the metallic thin film 105 is oxidized to an iron oxide thin film 301 and the metallic nanoparticle 101 are oxidized to a metal oxide nanoparticle 302. Annealing the nanocomposite thin films 100 in the oxygen environment further increases its sensitivity and selectivity in applications as sensing elements.

Abstract

The present invention provides a method for fabricating a nanocomposite thin film with a plurality of metallic nanoparticles. The method comprising depositing an insulating layer onto the surface of a substrate; depositing a metallic film on the surface of the insulating layer; annealing the metallic film, wherein annealing nucleates the metallic film to form the metallic nanoparticles on the insulating layer; and depositing a metallic thin film onto the insulating layer by a selective chemical vapour deposition tccliniquc, wherein depositing of the metallic thin film partially embeds the metallic nanoparticles within the metallic thin film, the surfaces of the metallic nanoparticles does not absorb the metallic thin film; wherein at least part of the outer surfaces of the metallic nanoparticles arc exposed in the metallic thin film.

Description

A Method Of Fabricating A Nanocomposite Thin Film With Metallic
Nanoparticles
Field of the Invention
[001] The present invention relates to a method of fabricating a nanocomposite thin film with metallic nanoparticles. In particular, the method partially embeds metallic nanoparticles in a metallic thin film, in which the metallic thin film is deposited on a substrate by selective chemical vapor deposition (CVD).
Background
[002] A nanocomposite is a multiphase material where one of the phases has dimensions less than lOOnm. Examples include a composite of nanoparticles embedded within a thin film (a nanocomposite thin film) and etc. Nanocomposite thin films are applied in a wide range of applications and devices such as magnetic storage devices, nanoelectronics, sensors and etc.
[003] Current methods of forming these nanocomposite thin films with metal or metal oxide nanoparticles include physical coating of the nanoparticles mixed in polymer solution, deposition and etching method, and etc. However, there are several drawbacks with these methods. One example includes a high potential of surface defects occurring due to difficulty in process control when using etching and deposition methods. This is especially so when films and particles are of nanometer dimensions. Further, some of these methods are also only suitable for a small sample size. These methods are therefore not suitable for a large-scale fabrication. [004] Another drawback of these methods is that more than half of the nanoparticles are left unexposed when forming the nauocomposite thin film with the nanoparticles. This may be undesirable when using the nanocompositc thin film with the nanoparticles as sensing elements in applications. Summary
[005] In one aspect of the present invention, there is provided a method for fabricating a nanocompositc thin film with a plurality of metallic nanoparticles. The method comprising depositing an insulating layer onto the surface of a substrate; depositing a metallic film on the surface of the insulating layer; annealing the metallic film, wherein annealing nucleates the metallic film to form the metallic nanoparticles on the insulating layer; and depositing a metallic thin film onto the insulating layer by a selective chemical vapour deposition technique, wherein depositing of the metallic thin film partially embeds the metallic nanoparticles within the metallic thin film, the surfaces of the metallic nanoparticles docs not absorb the metallic thin film; wherein at least patt of the outer surfaces of the metallic nanoparticles are exposed in the metallic thin film.
[006] In one embodiment, the insulating layer is made of an oxide material, a nitride material, or any other suitable material.
[007] In another embodiment, the substrate is made of a semiconductor material. [008] In yet another embodiment, the deposition technique is a physical vapour deposition technique, a chemical vapour deposition technique, or any other suitable deposition technique.
[009] In one embodiment, the metallic film is not iron and comprises of a material selected from a periodic table consisting and not limited to gold, cobalt, iron, nickel, indium, platinum, tungsten, zinc and copper.
[0010] In yet another embodiment, the metall ic thin film is made of iron.
[0011] In another embodiment, the selective chemical vapour deposition of the metallic thin film is from a metal-organic iron pentacarbonyl [Fe(CO)5] precursor, [0012] In another aspect of the present invention, the method is applicable as a catalyst material for growth of nanotube and nanowires.
[0013] In another embodiment, the method is compatible with standard semiconductor fabrication processes, wafer fabrication processes, and etc. Further, a wafer fabrication processes can be completed in a single system without removing the wafer when the metallic nanoparticles and the metallic thin film are deposited with chemical vapour deposition techniques.
[0014] In yet another embodiment, the nanocomposite thin film with the metallic nanoparticles is further annealed in an oxygen environment. Further, annealing oxidizes the metallic thin film to an iron oxide thin film and the metallic nanoparticle to metal oxide nanoparticle. Brief Description of the Drawings
[0015] This invention will be described by way of non-limiting embodiments of the present invention, with reference to the accompanying drawings, in which:
[0016] FIG. 1A-1D illustrates a process flow of integrating metallic nanoparticles in a thin film as one embodiment in the present invention;
[0017] FIG. 2 exemplifies the surface area of the partially embedded metallic nanoparticles in the thin film; and
[0018] FIG. 3 illustrates a process flow of oxidizing the partially embedded metallic nanoparticles in the thin film. Detailed Description
[0019] The following descriptions of a number of specific and alternative embodiments are provided to understand the inventive features of the present invention. It shall be apparent to one skilled in the art, however that this invention may be practiced without such specific details. Some of the details may not be described in length so as to not obscure the invention. For ease of reference, common reference numerals will be used throughout the figures when referring to same or similar features common to the figures.
[0020] FIGs. 1A-1D illustrates a method of fabricating a nanoeomposite thin film 100 with a plurality of metallic nanoparticles 101 as one embodiment of the present invention. The method comprises depositing an insulating layer 102 onto the surface of a substrate 103; depositing a metallic film 104 on the top of the insulating layer 102; annealing the metallic film 104 to nucleate the metallic film 104, forming the metallic nanoparticles 101 on the insulating layer 102; and depositing a metallic thin film 105 onto the insulating layer 102, partially embedding the metallic nanoparticles 101 within the insulating layer. Further, the method of fabricating the nanocomposite thin film 100 with metallic nanoparticles 101 leaves at least part of the outer surfaces of the metallic nanoparticles 101 exposed after depositing the metallic thin film 105.
[0021] In FIG. 1A, the insulating layer 102 is deposited onto the surface of the substrate 103 by a deposition technique. The deposition technique may be a physical vapour deposition (PVD) teciinique, a chemical vapour deposition (CVD) technique or any other suitable deposition techniques. Such deposition techniques are typically used for depositing a thin film of material onto another material. The deposition technique can also control the thickness of the material deposition to within a few tens of nanometers. [0022] In another embodiment of the present invention, the insulating layer
102 can also be deposited onto the substrate 103 by having silicon dioxide oxidized on the substrate 103 by a thermal oxidation method. Thermal oxidation method is commonly used in semiconductor manufacturing and it is used in extremely high temperatures. [0023] The insulating layer 102 isolates the metallic nanoparticles 101 and the metallic thin film 105 from the substrate 103. Typically, both the insulating layer 102 and the substrate 103 are made of materials that are able to withstand high temperatures. The insulating layer 102 is made of an oxide material, a nitride material, or any other suitable material. The substrate 103 is made of a semiconductor material (e.g. silicon, etc.).
[0024] In FIG. 1B, the metallic film 104 is also deposited onto the surface of the insulating layer 102 by the deposition technique. The metallic film 104 is not iron and comprises of a material selected from a group consisting but not limited to gold, cobalt, iron, nickel, indium, platinum, tungsten, zinc, and copper.
[0026] The metallic film 104 is annealed in temperatures ranging from 200°C to 800°C. As both the insulating layer 102 and the substrate 103 are able to withstand against the high temperatures, annealing only nucleates the metallic film 104 to form the plurality of metallic nanoparticles 101 on the insulating layer 102.
[0026] In FIG. 1C, the metallic film 104 is nucleated to form the metallic nanoparticles 101 on the insulating layer 102. The metallic nanoparticles 101 arc typically of dimensions in a range between 1 to 100 nm.
[0027] In FIG. ID, selective CVD is used to deposit the metallic thin film 105 only onto the insulating layer 102 and partially embedding the metallic nanoparticles 101 within the metallic thin film 105. The selective CVD enables fabrication of structures and films not defined by lithographic resolution. Selective CVD results from an autocatatytic reaction once deposition of the metallic thin film 105 is initiated on the insulating layer 102. [0028] The metallic thin film 105 is made of iron (Fc). The selective CVD of the metallic thin film 105 is from a metal-organic iron pentacarbonyl [Fe(CO)sl precursor which occurs preferentially on insulating materials typically silicon dioxide or silicon nitride surfaces. The reaction chemistry is for the Fe(CO)3 takes place between 200ºC to 400°C. The chemical reaction equation of the Fe(CO)s is as follows:
Fe(CO)5 (g)→ Fe (s) + 5CO (g)
[0029] The absorption of the metallic thin film 105 to the surfaces of the metallic nanoparticles 101 is inhibited by either an absorbed surface monolayer or due to the electrochemical properties of the metallic nanoparticles 101.
[0030] In one embodiment of the present invention, the process is applicable in fabricating sensing elements. Having at least part of the outer surfaces of the metallic nanoparticles 101 exposed increases sensitivity and selectivity in the application. Therefore, the method of fabricating the nanocomposite thin film 100 with melailic nanoparticles 101 can be applied in sensors and the metallic nanoparticles 101 as sensing elements.
[0031] Further, the method of fabricating the nanocomposite thin film 100 with metallic nanoparticles 101 is also applicable as a catalyst material for growth of nanotube and nanowires as one embodiment of the present invention.
[0032] In another embodiment of the present invention, the method of fabricatiug the nanocomposite thin film 100 is compatible with standard semiconductor fabrication processes. The method is also compatible with a wafer fabrication process. The wafer fabrication process can be completed in a single system without removing the wafer if both the metallic nanoparticles 101 and the metallic thin film 105 are deposited with CVD techniques. [0033] FIG. 2 exemplifies the surface area of the nanocomposite thin film 100 with the metallic nanoparticles 101. The metallic nanoparticles 101 are partially embedded within the metallic thin film 105 and at least part of its outer surfaces is exposed. [0034] FIG. 3 illustrates a process flow of oxidizing the nanocomposite thin film 100 with the metallic nanoparticles 101 as another embodiment of the present invention. The nanocomposite thin film 100 can be further annealed in an oxygen environment- After annealing, the metallic thin film 105 is oxidized to an iron oxide thin film 301 and the metallic nanoparticle 101 are oxidized to a metal oxide nanoparticle 302. Annealing the nanocomposite thin films 100 in the oxygen environment further increases its sensitivity and selectivity in applications as sensing elements.
[0035] The above description illustrates various embodiments of the present invention along with examples of how aspects of the present invention may be implemented. While specific embodiments have been described and illustrated it is understood that many charges, modifications, variations and combinations thereof could be made to the present invention without departing from the scope of the present invention. The above examples, embodiments, instructions semantics, and drawings should not be deemed to be the only embodiments, and are presented to illustrate the flexibility and advantages of the present invention as defined by the following claims:

Claims

Claims
1. A method for fabricating a nanocornposite thin film with a plurality of metallic nanoparticles, the method comprising; depositing an insulating layer onto the surface of a substrate; depositing a metallic film on the surface of the insulating layer; annealing the metallic film, wherein annealing nucleates the metallic film to form the metallic nanoparticles on the insulating layer; and depositing a metallic thin film onto the insulating layer by a selective chemical vapour deposition technique, wherein depositing of the metallic thin film partially embeds the metallic nanoparticles within the metallic thin film, the surfaces of the metallic nanoparticles docs not absorb the metallic thin film; wherein at least part of the outer surfaces of the metallic nanoparticles are exposed in the metallic thin film.
2. The method according to claim 1, wherein the insulating layer is made of an oxide material, a nitride material, or any other suitable material.
3. The method according to claim 1, wherein the substrate is made of a semiconductor material.
4. The method according to claim 1, wherein the deposition technique is a physical vapour deposition technique, a chemical vapour deposition technique, or any other suitable deposition technique.
5. The method according to claim 1, wherein the metallic film is not iron and comprises of a material selected from a periodic table consisting and not limited to gold, cobalt, iron, nickel, indium, platinum, tungsten, zinc and copper.
6. The method according to claim 1 , wherein the metallic thin film is made of iron.
7. The method according to claim 1. wherein the selective chemical vapour deposition of the metallic thin film is from a metal-organic iron pentacarbonyl [Fc(CO)5] precursor.
8. The method according to claim 1 , wherein the method is applicable as a catalyst material for growth of nunotube and nanowires.
9. The method according to claim I, wherein the method is compatible with standard semiconductor fabrication processes, wafer fabrication processes, and etc.
10. The method according to claim 10, wherein a wafer fabrication processes can be completed in a single system without removing the wafer when the metallic nanoparticles and the metallic thin film are deposited with chemical vapour deposition techniques.
11. The method according to claim 1 , wherein the nanocompositc thin film with the metallic nanoparticles is further annealed in an oxygen environment.
12. The method according to claim 11, wherein annealing oxidizes the metallic thin film to an iron oxide thin film and the metallic nanoparticlc to metal oxide nanoparticle.
PCT/MY2012/000142 2011-07-06 2012-06-22 A method of fabricating a nanocomposite thin film with metallic nanoparticles WO2013006031A1 (en)

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