WO2013002096A1 - めっき処理方法、めっき処理装置および記憶媒体 - Google Patents
めっき処理方法、めっき処理装置および記憶媒体 Download PDFInfo
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- WO2013002096A1 WO2013002096A1 PCT/JP2012/065755 JP2012065755W WO2013002096A1 WO 2013002096 A1 WO2013002096 A1 WO 2013002096A1 JP 2012065755 W JP2012065755 W JP 2012065755W WO 2013002096 A1 WO2013002096 A1 WO 2013002096A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1669—Agitation, e.g. air introduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
Definitions
- the present invention relates to a plating method, a plating apparatus, and a storage medium that perform plating by supplying a plating solution to the surface of a substrate.
- a substrate such as a semiconductor wafer or a liquid crystal substrate is provided with wiring for forming a circuit on the surface.
- wiring instead of an aluminum material, a copper material having a low electrical resistance and high reliability has been used.
- copper is more easily oxidized than aluminum, it is desirable to perform plating with a metal having high electromigration resistance in order to prevent oxidation of the copper wiring surface.
- the plating process is performed, for example, by supplying an electroless plating solution to the surface of the substrate on which the copper wiring is formed.
- an electroless plating process is generally performed by a batch processing apparatus.
- Japanese Patent Application Laid-Open No. 2009-249679 discloses a substrate rotating mechanism for rotating a substrate, a nozzle for discharging a plating solution onto the substrate, and a nozzle on the substrate.
- a plating apparatus including a nozzle moving mechanism that moves in a direction along the direction.
- a uniform flow of the plating solution is formed on the surface of the substrate by supplying the plating solution while rotating the substrate.
- the plating process is uniformly performed over the entire surface of the substrate.
- Japanese Patent Application Laid-Open No. 2001-73157 describes a technique for repeating a process of applying a chemical, a process of pouring a liquid, and a process of removing a chemical multiple times in order to reduce the amount of the chemical used. .
- the processing time may be long.
- the present invention has been made in consideration of such points, and by improving the reaction rate of the plating solution, a plating method and a plating process capable of reducing the plating processing time per substrate.
- An apparatus and a storage medium are provided.
- the substrate in a plating method for performing plating by supplying a plating solution to a substrate, the substrate is moved at a first rotational speed while the pretreatment solution remains on the surface of the substrate.
- the liquid replacement step of performing liquid replacement by supplying a plating solution to the substrate and rotating the substrate at a second rotational speed while continuing to supply the plating solution to the substrate An incubation step of performing initial film formation on the substrate, and a plating film growth step of growing the plating film by rotating the substrate at a third rotation speed while continuously supplying a plating solution to the substrate.
- the plating process method is characterized in that the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.
- the substrate rotation holding mechanism that holds and rotates the substrate, and the substrate rotation holding mechanism holds the substrate.
- a discharge mechanism that discharges the plating solution toward the substrate; a plating solution supply mechanism that supplies the plating solution to the discharge mechanism; a control mechanism that controls the substrate rotation holding mechanism, the discharge mechanism, and the plating solution supply mechanism; The control mechanism rotates the substrate at a first rotation speed by the substrate rotation holding mechanism in a state where the pretreatment liquid remains on the surface of the substrate, and applies a plating solution to the substrate by the discharge mechanism.
- the substrate is replaced by the substrate rotation holding mechanism or rotated at the second rotation speed while the plating solution is continuously supplied from the discharge mechanism to the substrate.
- An initial film is formed on the substrate, and a plating film is grown by rotating the substrate at a third rotational speed by the substrate rotation holding mechanism in a state where the plating solution is continuously supplied from the discharge mechanism to the substrate.
- the substrate rotation holding mechanism, the discharge mechanism, and the plating solution supply mechanism are controlled so that the first rotation speed is higher than the third rotation speed, and the third rotation speed is There is provided a plating apparatus characterized in that the rotational speed is higher than 2 rotational speeds.
- the plating method performs plating by supplying a plating solution to the substrate.
- the substrate is stopped or rotated at the second rotation speed to perform an initial film formation on the substrate, and a state where the plating solution is continuously supplied to the substrate
- a plating film growth step of growing the plating film by rotating the substrate at a third rotational speed, wherein the first rotational speed is higher than the third rotational speed, and the third rotational speed.
- the substrate in a state where the pretreatment liquid remains on the surface of the substrate, the substrate is rotated at the first rotation speed, and the plating solution is supplied to the substrate to perform the liquid replacement (liquid replacement step).
- the substrate is stopped or rotated at the second rotation number to generate an initial film formation on the substrate (incubation step).
- the substrate is rotated at the third rotation number to grow a plating film (plating film growth step).
- the first rotational speed is higher than the third rotational speed
- the third rotational speed is higher than the second rotational speed.
- the substrate is rotated at the third rotational speed while the plating solution is continuously supplied to the substrate.
- Substituting with a plating solution can promote stable plating growth. As a result, the plating process time per substrate can be shortened.
- FIG. 1 is a plan view showing a schematic configuration of a plating system according to an embodiment of the present invention.
- FIG. 2 is a side view showing a plating apparatus according to an embodiment of the present invention.
- FIG. 3 is a plan view of the plating apparatus shown in FIG.
- FIG. 4 is a view showing a plating solution supply mechanism.
- FIG. 5 is a view showing heating means of the plating solution supply mechanism.
- FIG. 6 is a flowchart showing a plating method according to an embodiment of the present invention.
- FIGS. 7A to 7E are cross-sectional views showing how a Co plating layer is formed in the Co plating step.
- FIG. 8 is a graph showing the relationship between the number of rotations of the substrate and time in the Co plating step.
- the plating system 1 mounts a carrier 3 that accommodates a plurality of substrates 2 (here, 25 semiconductor wafers) (for example, 25 wafers), and carries in a predetermined number of substrates 2. And a substrate loading / unloading chamber 5 for unloading and a substrate processing chamber 6 for performing various processes such as plating and cleaning of the substrate 2.
- the substrate carry-in / out chamber 5 and the substrate processing chamber 6 are provided adjacent to each other.
- the substrate carry-in / out chamber 5 includes a carrier placement unit 4, a transfer chamber 9 in which a transfer device 8 is stored, and a substrate transfer chamber 11 in which a substrate transfer table 10 is stored.
- the transfer chamber 9 and the substrate delivery chamber 11 are connected to each other via a delivery port 12.
- the carrier placement unit 4 places a plurality of carriers 3 that accommodate a plurality of substrates 2 in a horizontal state.
- the substrate 2 is transferred, and in the substrate transfer chamber 11, the substrate 2 is transferred to and from the substrate processing chamber 6.
- a predetermined number of substrates 2 are transported by the transport device 8 between any one carrier 3 placed on the carrier platform 4 and the substrate delivery table 10.
- the substrate processing chamber 6 is arranged in the front and back (right and left in FIG. 1) in the central portion, and arranged side by side on the one side and the other side of the substrate transport unit 13 to supply the plating solution to the substrate 2. And a plurality of plating processing apparatuses 20 that perform the plating process.
- the substrate transport unit 13 includes a substrate transport device 14 configured to be movable in the front-rear direction.
- the substrate transfer unit 13 communicates with the substrate transfer table 10 in the substrate transfer chamber 11 via the substrate transfer port 15.
- the substrates 2 are transferred to the respective plating processing apparatuses 20 in a state where the substrates 2 are held horizontally one by one by the substrate transfer device 14 of the substrate transfer unit 13. Then, in each plating processing apparatus 20, the substrate 2 is subjected to cleaning processing and plating processing one by one.
- Each plating apparatus 20 differs only in the plating solution used, and the other points have substantially the same configuration. Therefore, in the following description, the configuration of one plating processing apparatus 20 among the plurality of plating processing apparatuses 20 will be described.
- FIG. 2 is a side view showing the plating apparatus 20
- FIG. 3 is a plan view showing the plating apparatus 20.
- the plating apparatus 20 holds the substrate 2 inside the casing 101 and rotates the substrate 2 on the surface of the substrate 2 held by the substrate rotation holding mechanism 110.
- a discharge mechanism 21 that discharges the plating liquid toward the discharge mechanism, a plating liquid supply mechanism 30 that supplies the plating liquid to the discharge mechanism 21, and a cup 105 that is driven up and down by an elevating mechanism 164 and has discharge ports 124, 129, and 134.
- the liquid discharge mechanisms 120, 125, and 130 for collecting and discharging the plating solution and the like scattered from the substrate 2 to the discharge ports 124, 129, and 134, the substrate rotation holding mechanism 110, the discharge mechanism 21, and the plating solution supply mechanism 30 are controlled. And a control mechanism 160.
- the substrate rotation holding mechanism 110 includes a hollow cylindrical rotation shaft 111 extending vertically in the casing 101, and a turntable 112 attached to the upper end portion of the rotation shaft 111. And a wafer chuck 113 that is provided on the outer peripheral portion of the upper surface of the turntable 112 and supports the substrate 2, and a rotation mechanism 162 that rotates the rotation shaft 111.
- the rotation mechanism 162 is controlled by the control mechanism 160, and the rotation shaft 111 is rotationally driven by the rotation mechanism 162, whereby the substrate 2 supported by the wafer chuck 113 is rotated.
- the control mechanism 160 can rotate or stop the rotation shaft 111 and the wafer chuck 113 by controlling the rotation mechanism 162. Further, the control mechanism 160 can control the rotational speed of the rotating shaft 111 and the wafer chuck 113 to be increased, decreased, or maintained at a constant value.
- the discharge mechanism 21 includes a first discharge nozzle 45 that discharges a chemical reduction type plating solution such as a CoP plating solution toward the substrate 2.
- the chemical reduction type plating solution is supplied from the plating solution supply mechanism 30 to the first discharge nozzle 45. Details of the first discharge nozzle 45 will be described later.
- FIG. 2 only one first discharge nozzle 45 is shown, but in addition to the first discharge nozzle 45, another chemical discharge type plating solution such as a CoP plating solution is discharged toward the substrate 2.
- a discharge nozzle (additional discharge nozzle) may be provided.
- the discharge mechanism 21 may further include a second discharge nozzle 70 including a discharge port 71 and a discharge port 72 as shown in FIG. As shown in FIGS. 2 and 3, the second discharge nozzle 70 is attached to the distal end portion of the arm 74, and the arm 74 can be extended in the vertical direction and supported by the rotation mechanism 165. It is fixed to the shaft 73.
- the discharge port 71 is connected via a valve 76a to a plating solution supply mechanism 76 for supplying a substitution type plating solution, for example, a Pd plating solution.
- the discharge port 72 is connected to a cleaning process liquid supply mechanism 77 that supplies a cleaning process liquid via a valve 77a.
- a rinsing liquid for supplying a pretreatment liquid for a pretreatment performed prior to the plating process for example, a rinsing liquid such as pure water, to the discharge port 72 of the second discharge nozzle 70.
- the supply mechanism 78 may be further connected via a valve 78a. In this case, by appropriately controlling the opening and closing of the valve 77a and the valve 78a, either the cleaning processing liquid or the rinsing processing liquid is selectively discharged from the second discharge nozzle 70 onto the substrate 2.
- the first discharge nozzle 45 includes a discharge port 46.
- the first discharge nozzle 45 is attached to the tip of an arm 49, and the arm 49 is configured to be movable back and forth in the radial direction of the substrate 2 (the direction indicated by the arrow D in FIGS. 2 and 3).
- the first discharge nozzle 45 is movable between a central position close to the central portion of the substrate 2 and a peripheral position closer to the peripheral side than the central position.
- the first discharge nozzle at the center position is indicated by reference numeral 45 ′
- the first discharge nozzle at the peripheral position is indicated by reference numeral 45 ′′.
- FIG. 4 is a diagram showing the plating solution supply mechanism 30.
- the plating solution supply mechanism 30 includes a supply tank 31 that stores the plating solution 35, and a supply pipe 33 that supplies the plating solution 35 in the supply tank 31 to the first discharge nozzle 45. Yes.
- a valve 32 is inserted in the supply pipe 33.
- a tank heating means 50 for heating the plating solution 35 to the storage temperature is attached to the supply tank 31.
- a heating means 60 for heating the plating solution 35 to a discharge temperature higher than the storage temperature is attached to the supply pipe 33.
- the tank heating means 50 and the heating means 60 will be described later in detail.
- the above-mentioned “storage temperature” is a predetermined temperature that is lower than the temperature (plating temperature) at which the deposition of metal ions proceeds by self-reaction in the plating solution 35 and higher than room temperature.
- the “discharge temperature” is a predetermined temperature that is equal to or higher than the plating temperature described above. According to the present embodiment, the plating solution 35 is thus heated to a temperature equal to or higher than the plating temperature in two stages.
- the plating solution 35 is heated to a temperature equal to or higher than the plating temperature in the supply tank 31, the deactivation of the reducing agent and the evaporation of the components can be prevented in the plating solution 35 in the supply tank 31. . Thereby, the life of the plating solution 35 can be extended.
- the plating solution 35 is quickly heated to a temperature equal to or higher than the plating temperature with less energy. can do. Thereby, precipitation of metal ions can be suppressed.
- Various chemicals are supplied to the supply tank 31 from a plurality of chemical supply sources (not shown) in which various components of the plating solution 35 are stored.
- chemical solutions such as CoSO 4 metal salts containing Co ions, reducing agents (for example, hypophosphorous acid, etc.) and additives are supplied.
- the flow rates of various chemical solutions are adjusted so that the components of the plating solution 35 stored in the supply tank 31 are appropriately adjusted.
- the tank heating means 50 is attached to the circulation pipe 52 that forms a circulation path of the plating solution 35 in the vicinity of the supply tank 31 and the circulation pipe 52, and heats the plating solution 35 to a storage temperature.
- a heater 53 and a pump 56 that is inserted into the circulation pipe 52 and circulates the plating solution 35 are provided.
- the tank heating means 50 the plating solution 35 in the supply tank 31 can be heated to the above-mentioned storage temperature while circulating in the vicinity of the supply tank 31.
- the supply pipe 33 is connected to the circulation pipe 52.
- the valve 36 is opened and the valve 32 is closed, the plating solution 35 that has passed through the heater 53 is returned to the supply tank 31.
- the valve 36 is closed and the valve 32 is opened, the plating solution 35 that has passed through the heater 53 reaches the first discharge nozzle 45.
- a filter 55 may be inserted in the circulation pipe 52. Thereby, when the plating solution 35 is heated by the tank heating means 50, various impurities contained in the plating solution 35 can be removed.
- the circulation pipe 52 may be provided with monitor means 57 for monitoring the characteristics of the plating solution 35.
- the monitor means 57 includes, for example, a temperature monitor that monitors the temperature of the plating solution 35, a pH monitor that monitors the pH of the plating solution 35, and the like.
- the plating solution supply mechanism 30 further includes a deaeration unit 37 connected to the supply tank 31 for removing dissolved oxygen and dissolved hydrogen in the plating solution 35 stored in the supply tank 31. It may be.
- the deaeration unit 37 is configured to supply, for example, an inert gas such as nitrogen into the supply tank 31. In this case, by dissolving an inert gas such as nitrogen in the plating solution 35, other gases such as oxygen and hydrogen already dissolved in the plating solution 35 can be discharged to the outside of the plating solution 35. . Oxygen and hydrogen discharged from the plating solution 35 are discharged from the supply tank 31 by the exhaust means 38.
- the heating means 60 is for further heating the plating solution 35 heated to the storage temperature by the tank heating means 50 to the discharge temperature.
- the heating means 60 is attached to a temperature medium supply means 61 for heating a predetermined heat transfer medium to a discharge temperature or a temperature higher than the discharge temperature, and a supply pipe 33, and the temperature medium supply means 61 And a temperature controller 62 for conducting the heat of the heat transfer medium from the heat transfer medium to the plating solution 35 in the supply pipe 33.
- a temperature holder 65 is provided so as to reach the inside of the first discharge nozzle 45 and holds the plating solution 35 passing through the supply pipe 33 located in the first discharge nozzle 45 at the discharge temperature. May be further provided.
- the temperature controller 62 has a supply port 62a for introducing a heat transfer medium for temperature adjustment (for example, hot water) supplied from the temperature medium supply means 61, and a discharge port 62b for discharging the heat transfer medium. .
- the heat transfer medium supplied from the supply port 62 a contacts the supply pipe 33 while flowing through the space 62 c inside the temperature regulator 62. Thereby, the plating solution 35 flowing through the supply pipe 33 is heated to the discharge temperature.
- the heat transfer medium after being used for heating the plating solution 35 is discharged from the discharge port 62b.
- the supply pipe 33 in the temperature controller 62 is formed in a spiral shape as shown in FIG. Thereby, the contact area between the heat transfer medium and the supply pipe 33 can be increased, whereby the heat of the heat transfer medium can be efficiently transmitted to the plating solution 35.
- the temperature holder 65 is for holding the temperature of the plating solution 35 until the plating solution 35 heated to the discharge temperature by the temperature controller 62 is discharged from the first discharge nozzle 45.
- the temperature retainer 65 includes a heat retaining pipe 65c extending in contact with the supply pipe 33 in the temperature retainer 65 and a heat transfer medium supplied from the temperature medium supplying means 61 to the heat retaining pipe 65c.
- a supply port 65a to be introduced and a discharge port 65b to discharge the heat transfer medium are provided.
- the heat retaining pipe 65c extends along the supply pipe 33 to the vicinity of the tip of the first discharge nozzle 45, thereby uniformly discharging the temperature of the plating solution 35 discharged from the discharge port 46 of the first discharge nozzle 45. Can be held at temperature.
- the heat retaining pipe 65 c may be opened inside the first discharge nozzle 45 and communicate with the space 65 d in the temperature retainer 65.
- the temperature retainer 65 includes the supply pipe 33 positioned at the center of the cross section, the heat retaining pipe 65c disposed in thermal contact with the outer periphery of the supply pipe 33, and the space positioned on the outer periphery of the heat retaining pipe 65c. It has a triple structure consisting of 65d (structure of triple piping).
- the heat transfer medium supplied from the supply port 65a keeps the plating solution 35 through the heat retaining pipe 65c until reaching the tip of the first discharge nozzle 45, and then drains through the space 65d in the temperature retainer 65. It is discharged from the outlet 65b.
- the heat transfer medium flowing through the space 65d acts to thermally block the heat transfer medium flowing through the heat retaining pipe 65c (and the plating solution 35 flowing through the supply pipe 33 inside thereof) and the atmosphere outside the temperature holder 65. . Accordingly, heat loss of the heat transfer medium flowing through the heat retaining pipe 65c can be suppressed, and heat transfer from the heat transfer medium flowing through the heat retaining pipe 65c to the plating solution 35 flowing through the supply pipe 33 can be performed efficiently.
- both the heat transfer medium supplied to the temperature controller 62 and the heat transfer medium supplied to the temperature holder 65 are heat transfer media supplied from the temperature medium supply means 61.
- An example is shown.
- the present invention is not limited to this, and the heat transfer medium supplied to the temperature controller 62 and the heat transfer medium supplied to the temperature holder 65 are supplied from separate heat transfer medium sources. Also good.
- liquid discharge mechanism 120, 125, and 130 for discharging the plating solution and the cleaning solution scattered from the substrate 2 will be described with reference to FIG.
- a cup 105 that is driven up and down by an elevating mechanism 164 and has outlets 124, 129, and 134 is disposed in the casing 101.
- the liquid discharge mechanisms 120, 125, and 130 discharge the liquid collected at the discharge ports 124, 129, and 134, respectively.
- the processing liquid splashed from the substrate 2 is discharged by the liquid discharge mechanisms 120, 125, and 130 through the discharge ports 124, 129, and 134 for each type of liquid.
- the CoP plating solution scattered from the substrate 2 is discharged from the plating solution discharge mechanism 120
- the Pd plating solution scattered from the substrate 2 is discharged from the plating solution discharge mechanism 125
- the cleaning solution and the rinse treatment solution scattered from the substrate 2 are processed.
- the liquid is discharged from the liquid discharge mechanism 130.
- the plating apparatus 20 further includes a back surface treatment liquid supply mechanism 145 that supplies a treatment liquid to the back surface of the substrate 2 and a back surface gas supply mechanism 150 that supplies gas to the back surface of the substrate 2. You may do it.
- the plating processing system 1 including a plurality of plating processing apparatuses 20 configured as described above is driven and controlled by the control mechanism 160 according to various programs recorded in the storage medium 161 provided in the control mechanism 160, whereby the substrate 2 is controlled. Various processes are performed.
- the storage medium 161 stores various programs such as various setting data and a plating processing program described later.
- known media such as a computer-readable memory such as ROM and RAM, and a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk can be used.
- the plating processing system 1 and the plating processing apparatus 20 are driven and controlled to perform plating processing on the substrate 2 in accordance with a plating processing program recorded in the storage medium 161.
- a method of performing Pd plating treatment on the substrate 2 by displacement plating and then performing Co plating treatment by chemical reduction plating with one plating treatment apparatus 20 will be described with reference to FIGS. 6 to 8. To do.
- a substrate carrying-in process and a substrate receiving process are performed.
- a single substrate 2 is carried from the substrate delivery chamber 11 into one plating processing device 20.
- the cup 105 is first lowered to a predetermined position, and then the loaded substrate 2 is supported by the wafer chuck 113, and then the discharge port 134 and the outer peripheral edge of the substrate 2 face each other.
- the cup 105 is raised by the elevating mechanism 164 to the position.
- a cleaning process including a rinse process, a pre-clean process, and a subsequent rinse process is executed (S301).
- the valve 78a of the rinse treatment liquid supply mechanism 78 is opened, whereby the rinse treatment liquid is supplied to the surface of the substrate 2 through the discharge port 72 of the second discharge nozzle 70.
- a pre-cleaning process is performed.
- the valve 77a of the cleaning processing liquid supply mechanism 77 is opened, whereby the cleaning processing liquid is supplied to the surface of the substrate 2 through the discharge port 72 of the second discharge nozzle 70.
- malic acid can be used as the cleaning treatment liquid
- pure water can be used as the rinse treatment liquid.
- the rinse treatment liquid is supplied to the surface of the substrate 2 through the discharge port 72 of the second discharge nozzle 70.
- the rinse treatment liquid and the cleaning treatment liquid after the treatment are discarded through the discharge port 134 of the cup 105 and the treatment liquid discharge mechanism 130.
- the substrate 2 is rotated in the first rotation direction R1 by the substrate rotation holding mechanism 110 unless otherwise specified.
- Pd plating process Next, a Pd plating process is performed (S302).
- This Pd plating step S302 is executed as a displacement plating treatment step while the substrate 2 after the pre-cleaning step is not dried. In this way, by performing the displacement plating process in a state where the substrate 2 is not dried, it is possible to prevent the copper on the surface to be plated of the substrate 2 from being oxidized and thus being unable to perform the displacement plating process satisfactorily. it can.
- the cup 105 is lowered by the elevating mechanism 164 to a position where the discharge port 129 and the outer peripheral edge of the substrate 2 face each other.
- the valve 76 a of the plating solution supply mechanism 76 is opened, whereby the plating solution containing Pd is discharged onto the surface of the substrate 2 through the discharge port 71 of the second discharge nozzle 70 at a desired flow rate.
- the treated plating solution is discharged from the discharge port 129 of the cup 105.
- the plating solution discharged from the discharge port 129 is collected and reused or discarded via the solution discharge mechanism 125.
- a rinsing process is performed as a pre-process performed prior to the Co plating process (S303).
- a rinse treatment liquid is supplied to the surface of the substrate 2 as a pretreatment liquid. Note that after the rinsing process, the substrate 2 may be cleaned by a chemical process, and then a rinsing process may be performed using a rinse process liquid to clean the chemical liquid.
- the Co plating step S304 is performed as a chemical reduction plating treatment step.
- the Co plating step S304 includes a liquid replacement step S305 (first step), an incubation step S306 (second step), and a plating film growth step S307 (third step). Yes.
- the element which precipitates in a Co plating process and forms a plating layer is not restricted to Co, Other elements may precipitate simultaneously.
- the plating solution used in the Co plating step contains ions of other elements in addition to Co ions, other elements may be deposited simultaneously with Co.
- the plating solution contains Co ions and P ions, and therefore a plating layer (CoP) containing not only Co but also P will be described.
- a plating layer obtained by the Co plating process is referred to as a “Co plating layer” even when an element other than Co is included in the plating layer.
- the liquid replacement step S305 is a plating that forms CoP with the rinse treatment liquid (for example, pure water) that is supplied to the substrate 2 in the rinse treatment step S303 and remains on the surface of the substrate 2. It is a step of replacing with the liquid 35.
- the incubation step S306 is a step of forming the initial Co plating layer 84 over the entire area on the Pd plating layer 83 to be described later in a state where the plating solution 35 is continuously supplied to the substrate 2 after the liquid replacement step S305. Yes.
- the initial Co plating layer 84 means a Co plating layer 84 having a thickness of several nm to several tens of nm.
- the plating reaction 35 is further advanced on the initial Co plating layer 84 formed in the incubation step S306 in a state where the plating solution 35 is continuously supplied to the substrate 2, and a sufficient thickness, for example, 100 nm.
- This is a step of forming a Co plating layer 84 having a thickness of ⁇ 1 ⁇ m.
- FIG. 7A is a diagram illustrating the substrate 2 after the Pd plating step S302 and the rinse treatment step S303 are performed.
- the substrate 2 has an insulating layer 81 made of an organic compound, a wiring 82 made of copper, and a Pd plating layer 83 provided to cover the wiring 82. Yes. Further, the rinse treatment liquid 79 supplied in the rinse treatment step S303 remains on the substrate 2.
- the control mechanism 160 controls the substrate rotation holding mechanism 110 to rotate the substrate 2 held by the substrate rotation holding mechanism 110 at the first rotation number (FIG. 8).
- the first rotation speed can be set to 100 rpm to 300 rpm, for example.
- the plating solution 35 heated to the discharge temperature by the heating means 60 is discharged from the discharge port 46 of the first discharge nozzle 45 toward the surface of the substrate 2.
- the plating solution 35 discharged from the discharge port 46 of the first discharge nozzle 45 reaches substantially the center of the substrate 2.
- the rinse treatment solution 79 present on the substrate 2 forms CoP, as shown in FIG. 7B. It is replaced by the plating solution 35. That is, the above-described liquid replacement step S305 is completed.
- the time required for the liquid replacement step S305 varies depending on the dimensions of the substrate 2 and the flow rate of the plating solution 35, but is, for example, about 1 second to 2 minutes.
- the first discharge nozzle 45 is horizontally moved (scanned) from the center side of the substrate 2 toward the peripheral edge side of the substrate 2 so that the rinse treatment liquid 79 is efficiently scraped from the surface of the substrate 2. good.
- the control mechanism 160 controls the substrate rotation holding mechanism 110 in a state where the plating solution 35 is continuously supplied to the substrate 2 using the first discharge nozzle 45. Accordingly, the rotation of the substrate 2 held by the substrate rotation holding mechanism 110 is stopped, or the substrate 2 is rotated at a second rotation number lower than the first rotation number (FIG. 8). During this time, a paddle (liquid puddle) of the plating solution 35 is formed on the substrate 2, and initial Co plating is formed on the Pd plating layer 83 on the surface of the substrate 2.
- an initial Co plating layer 84 is partially formed on the Pd plating layer 83 as shown in FIG. Is done.
- an initial Co plating layer 84 is formed over the entire area on the Pd plating layer 83, as shown in FIG. That is, the Co plating layer 84 having a thickness of several nanometers to several tens of nanometers is formed on the Pd plating layer 83, and the above-described incubation step S306 is completed.
- time required for the incubation step S306 is preferably longer than the time required for the liquid replacement step S305, for example, about 10 seconds to 10 minutes.
- the first discharge nozzle 45 may be stationary at a central position close to the central portion of the substrate 2 or at the central portion of the substrate 2.
- the center position (reference numeral 45 ′ in FIG. 3) and the peripheral position closer to the peripheral side than the central position (reference numeral 45 ′′ in FIG. 3) may be moved horizontally.
- the first discharge nozzle 45 The first discharge nozzle 45 may discharge the plating solution 35 toward the substrate 2 while the metal plate moves from the peripheral position to the center position, in which case the plating discharged from the first discharge nozzle 45 is used.
- the rotation of the substrate 2 is stopped or the substrate 2 is rotated at a second rotational speed lower than the first rotational speed. (That is, the first rotation number> the second rotation number).
- the reason for stopping the rotation of the substrate 2 or making it low is as follows. That is, when the Co plating layer 84 is formed on the Pd plating layer 83 of a different material, if the movement of the plating solution 35 is large at the initial stage of film formation, the progress of the film formation of the Co plating layer 84 is hindered. For this reason, it is necessary to reduce the movement of the plating solution 35 by stopping the rotation of the substrate 2 or setting it to a low rotation.
- the second rotation speed can be set to, for example, 0 rpm to 30 rpm.
- the control mechanism 160 controls the substrate rotation holding mechanism 110 so that the substrate 2 held by the substrate rotation holding mechanism 110 is removed. Rotate at the third rotation speed (FIG. 8). Thereby, the Co plating layer 84 is further grown on the surface of the substrate 2.
- the thickness of the Co plating layer 84 on the Pd plating layer 83 is set to a predetermined thickness as shown in FIG. For example, it reaches 1 ⁇ m. That is, the plating film growth step S307 described above is completed.
- the time required for the plating film growth step S307 is preferably longer than the time required for the liquid replacement step S305 and the incubation step S306, for example, about 1 to 20 minutes.
- the first discharge nozzle 45 may be stationary at a central position close to the central portion of the substrate 2, or the center of the substrate 2 3 may be moved horizontally between a central position (reference numeral 45 ′ in FIG. 3) close to the portion and a peripheral position (reference numeral 45 ′′ in FIG. 3) closer to the peripheral side than the central position.
- the control mechanism 160 controls the first discharge nozzle 45 and the arm 49 so that the first discharge nozzle 45 discharges the plating solution 35 toward the substrate 2 while the nozzle 45 moves from the peripheral position to the center position. Thereby, it is possible to promote the growth of the Co plating layer 84 in the plating film growth step S307.
- the third rotational speed for rotating the substrate 2 is higher than the second rotational speed described above and lower than the first rotational speed described above (that is, the first rotational speed). 1 rotation speed> 3rd rotation speed> 2nd rotation speed).
- the reason why the substrate 2 is rotated at a higher rotation (third rotation speed) than the incubation step S306 (second rotation speed) is as follows. That is, when the Co plating layer 84 is grown, the reactive species concentration in the plating solution 35 gradually decreases on the surface of the Co plating layer 84.
- the plating solution 35 can be moved on the surface of the Co plating layer 84 by rotating the substrate 2 at a higher rotation than the incubation step S306 as in the present embodiment.
- the plating solution 35 having a reduced reactive species concentration can be actively replaced with a new plating solution 35, and the reduction of the reactive species concentration in the plating solution 35 can be suppressed, and stable plating growth can be promoted. is there.
- the third rotation speed can be set to, for example, 30 rpm to 100 rpm.
- the rotation speed may be temporarily reduced or the rotation may be temporarily stopped.
- the third rotational speed is too low, there is a possibility that the above-described effect, that is, the effect of suppressing the decrease in the concentration of the reactive species in the plating solution 35 and promoting stable plating growth may not be obtained.
- the third rotational speed is set too high, for example, when the rotational speed is high enough to exceed the first rotational speed, the Co plating layer 84 may not grow uniformly in the plane of the substrate 2.
- the cup 105 is lowered by the elevating mechanism 164 to a position where the discharge port 124 and the outer peripheral edge of the substrate 2 face each other. For this reason, the treated plating solution 35 is discharged from the discharge port 124 of the cup 105. The treated plating solution 35 that has been discharged is collected and reused or discarded via the solution discharging mechanism 120.
- the Co plating step S304 including the liquid replacement step S305 (first step), the incubation step S306 (second step), and the plating film growth step S307 (third step) is completed.
- a cleaning step S308 including a rinse process, a post-clean process, and a subsequent rinse process is performed on the surface of the substrate 2 that has been subjected to the Co plating process. Since this cleaning step S308 is substantially the same as the above-described cleaning step S301, detailed description thereof is omitted.
- a drying process for drying the substrate 2 is performed (S309).
- the turntable 112 when the turntable 112 is rotated, the liquid adhering to the substrate 2 is blown outward by centrifugal force, thereby drying the substrate 2. That is, the turntable 112 may have a function as a drying mechanism that dries the surface of the substrate 2.
- the surface of the substrate 2 is first subjected to Pd plating by displacement plating, and then Co plating by chemical reduction plating.
- substrate 2 may be conveyed by the other plating processing apparatus 20 for Au plating processing.
- the surface of the substrate 2 is subjected to Au plating processing by displacement plating.
- the Au plating treatment method is substantially the same as the above-described method for Pd plating treatment except that the plating solution and the cleaning solution are different, and thus detailed description thereof is omitted.
- the substrate 2 is rotated at the first rotation speed, and the plating solution 35 is applied to the substrate 2.
- Liquid replacement is performed by supplying (liquid replacement step S305).
- the substrate 2 is stopped or rotated at the second rotational speed to perform initial film formation on the substrate 2 (incubation step S306).
- the substrate 2 is rotated at the third rotational speed to grow a plating film (plating film growth step S307).
- the first rotational speed is higher than the third rotational speed
- the third rotational speed is higher than the second rotational speed.
- the first rotation speed is set to 100 rpm to 300 rpm
- the second rotation speed is set to 0 rpm to 30 rpm
- the third rotation speed is set to 30 rpm to 100 rpm.
- the plating solution 35 used is not limited to the CoP plating solution, and various plating solutions 35 can be used.
- the chemical reduction type plating solution 35 various plating solutions 35 such as a CoWB plating solution, a CoWP plating solution, a CoB plating solution, or a NiP plating solution may be used.
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Abstract
Description
図1に示すように、めっき処理システム1は、基板2(ここでは、半導体ウエハ)を複数枚(たとえば、25枚)収容するキャリア3を載置し、基板2を所定枚数ずつ搬入及び搬出するための基板搬入出室5と、基板2のめっき処理や洗浄処理などの各種の処理を行うための基板処理室6と、を含んでいる。基板搬入出室5と基板処理室6とは、隣接して設けられている。
基板搬入出室5は、キャリア載置部4と、搬送装置8を収容した搬送室9と、基板受渡台10を収容した基板受渡室11とを有している。基板搬入出室5においては、搬送室9と基板受渡室11とが受渡口12を介して連通連結されている。キャリア載置部4は、複数の基板2を水平状態で収容するキャリア3を複数個載置する。搬送室9では、基板2の搬送が行われ、基板受渡室11では、基板処理室6との間で基板2の受け渡しが行われる。
また基板処理室6は、中央部において前後(図1の左右)に伸延する基板搬送ユニット13と、基板搬送ユニット13の一方側および他方側において前後に並べて配置され、基板2にめっき液を供給してめっき処理を行う複数のめっき処理装置20と、を有している。
以下、図2および図3を参照して、めっき処理装置20について説明する。図2は、めっき処理装置20を示す側面図であり、図3は、めっき処理装置20を示す平面図である。
このうち基板回転保持機構110は、図2および図3に示すように、ケーシング101内で上下に伸延する中空円筒状の回転軸111と、回転軸111の上端部に取り付けられたターンテーブル112と、ターンテーブル112の上面外周部に設けられ、基板2を支持するウエハチャック113と、回転軸111を回転駆動する回転機構162と、を有している。このうち回転機構162は、制御機構160により制御され、回転機構162によって回転軸111が回転駆動され、これによって、ウエハチャック113により支持されている基板2が回転される。この場合、制御機構160は、回転機構162を制御することにより、回転軸111およびウエハチャック113を回転させ、あるいは停止させることができる。また、制御機構160は、回転軸111およびウエハチャック113の回転数を上昇させ、下降させ、あるいは一定値に維持させるように制御することが可能である。
次に、基板2に向けてめっき液などを吐出する吐出機構21について説明する。吐出機構21は、基板2に向けてCoPめっき液などの化学還元タイプのめっき液を吐出する第1吐出ノズル45を含んでいる。化学還元タイプのめっき液は、めっき液供給機構30から第1吐出ノズル45に供給される。第1吐出ノズル45の詳細については後述する。なお、図2では1つの第1吐出ノズル45のみを示しているが、この第1吐出ノズル45に加えて、基板2に向けてCoPめっき液などの化学還元タイプのめっき液を吐出する他の吐出ノズル(追加の吐出ノズル)が設けられていても良い。
次に第1吐出ノズル45について説明する。図2および図3に示すように、第1吐出ノズル45は吐出口46を含んでいる。また第1吐出ノズル45は、アーム49の先端部に取り付けられており、このアーム49は、基板2の半径方向(図2および図3において矢印Dにより示される方向)において進退自在となるよう構成されている。このため、第1吐出ノズル45は、基板2の中心部に近接する中心位置と、中心位置よりも周縁側にある周縁位置との間で移動可能となっている。なお図3において、中心位置にある第1吐出ノズルが符号45’で示されており、周縁位置にある第1吐出ノズルが符号45”で示されている。
次に、吐出機構21の第1吐出ノズル45に、CoPめっき液などの化学還元タイプのめっき液を供給するめっき液供給機構30について説明する。図4は、めっき液供給機構30を示す図である。
タンク用加熱手段50は、図4に示すように、供給タンク31の近傍でめっき液35の循環経路を形成する循環管52と、循環管52に取り付けられ、めっき液35を貯留温度に加熱するヒータ53と、循環管52に介挿され、めっき液35を循環させるポンプ56と、を有している。タンク用加熱手段50を設けることにより、供給タンク31内のめっき液35を供給タンク31近傍で循環させながら上述の貯留温度まで加熱することができる。
次に図5を参照して、加熱手段60について説明する。加熱手段60は、タンク用加熱手段50によって貯留温度まで加熱されためっき液35を、さらに吐出温度まで加熱するためのものである。この加熱手段60は、図5に示すように、所定の伝熱媒体を吐出温度または吐出温度よりも高い温度に加熱する温度媒体供給手段61と、供給管33に取り付けられ、温度媒体供給手段61からの伝熱媒体の熱を供給管33内のめっき液35に伝導させる温度調節器62と、を有している。また図5に示すように、第1吐出ノズル45の内部に至るよう設けられ、第1吐出ノズル45内に位置する供給管33を通るめっき液35を吐出温度で保持するための温度保持器65がさらに設けられていてもよい。
次に、基板2から飛散しためっき液や洗浄液などを排出する液排出機構120,125,130について、図2を参照して説明する。図2に示すように、ケーシング101内には、昇降機構164により上下方向に駆動され、排出口124,129,134を有するカップ105が配置されている。液排出機構120,125,130は、それぞれ排出口124,129,134に集められる液を排出するものとなっている。
図2に示すように、めっき処理装置20は、基板2の裏面に処理液を供給する裏面処理液供給機構145と、基板2の裏面に気体を供給する裏面ガス供給機構150と、をさらに有していてもよい。
本実施の形態において、めっき処理システム1およびめっき処理装置20は、記憶媒体161に記録されためっき処理プログラムに従って、基板2にめっき処理を施すよう駆動制御される。以下の説明では、はじめに、一のめっき処理装置20で基板2にPdめっき処理を置換めっきにより施し、その後、Coめっき処理を化学還元めっきにより施す方法について、図6乃至図8を参照して説明する。
はじめに、基板搬入工程および基板受入工程が実行される。まず、基板搬送ユニット13の基板搬送装置14を用いて、1枚の基板2を基板受渡室11から一のめっき処理装置20に搬入する。めっき処理装置20においては、はじめに、カップ105が所定位置まで降下され、次に、搬入された基板2がウエハチャック113により支持され、その後、排出口134と基板2の外周端縁とが対向する位置までカップ105が昇降機構164により上昇させられる。
次に、リンス処理、前洗浄処理およびその後のリンス処理からなる洗浄工程が実行される(S301)。はじめに、リンス処理液供給機構78のバルブ78aが開かれ、これによって、リンス処理液が基板2の表面に第2吐出ノズル70の吐出口72を介して供給される。次に、前洗浄工程が実行される。はじめに、洗浄処理液供給機構77のバルブ77aが開かれ、これによって、洗浄処理液が基板2の表面に第2吐出ノズル70の吐出口72を介して供給される。なお、洗浄処理液としては例えばリンゴ酸を用いることができ、リンス処理液としては例えば純水を用いることができる。その後、上述の場合と同様にして、リンス処理液が基板2の表面に第2吐出ノズル70の吐出口72を介して供給される。処理後のリンス処理液や洗浄処理液は、カップ105の排出口134および処理液排出機構130を介して廃棄される。なお洗浄工程S301および以下の各工程のいずれにおいても、特に言及しない限り、基板2は基板回転保持機構110により第1回転方向R1に回転されている。
次に、Pdめっき工程が実行される(S302)。このPdめっき工程S302は、前洗浄工程後の基板2が乾燥されていない状態の間に、置換めっき処理工程として実行される。このように、基板2が乾燥していない状態で置換めっき処理工程を実行することで、基板2の被めっき面の銅などが酸化してしまい良好に置換めっき処理できなくなることを防止することができる。
次に、Coめっき工程に先立って実施される前処理として、例えばリンス処理工程が実行される(S303)。このリンス処理工程S303においては、前処理液として例えばリンス処理液が基板2の表面に供給される。なお、このリンス処理工程の後、薬液処理により基板2を洗浄処理し、その後当該薬液を洗浄するためにリンス処理液を用いてリンス処理を行っても良い。
その後、上述の工程S301~303が実行されたのと同一のめっき処理装置20において、Coめっき工程が実行される(S304)。このCoめっき工程S304は、化学還元めっき処理工程として実行される。このCoめっき工程S304は、図6に示すように、液置換工程S305(第1工程)と、インキュベーション工程S306(第2工程)と、めっき膜成長工程S307(第3工程)と、を含んでいる。
はじめに、制御機構160が基板回転保持機構110を制御することにより、基板回転保持機構110に保持された基板2を第1回転数で回転させる(図8)。この場合、第1回転数は、例えば100rpm~300rpmとすることができる。この状態で、図7(b)に示すように、加熱手段60によって吐出温度に加熱されためっき液35を、基板2の表面に向けて第1吐出ノズル45の吐出口46から吐出する。このとき、第1吐出ノズル45の吐出口46から吐出されためっき液35は、基板2の略中心部に到達する。
次に、第1吐出ノズル45を用いて基板2にめっき液35を供給し続けた状態で、制御機構160が基板回転保持機構110を制御する。これにより、基板回転保持機構110に保持された基板2の回転を停止させるか、または基板2を第1回転数より低い第2回転数で回転させるようにする(図8)。この間、基板2上にめっき液35のパドル(液盛り)が形成されるとともに、基板2表面のPdめっき層83上にCoめっきの初期成膜が行われる。
次に、第1吐出ノズル45を用いて基板2にめっき液35を供給し続けた状態で、制御機構160が基板回転保持機構110を制御し、基板回転保持機構110に保持された基板2を第3回転数で回転させる(図8)。これにより、基板2表面でCoめっき層84をさらに成長させる。
次に、Coめっき処理が施された基板2の表面に対して、リンス処理、後洗浄処理およびその後のリンス処理からなる洗浄工程S308が実行される。この洗浄工程S308は、上述の洗浄工程S301と略同一であるので、詳細な説明は省略する。
その後、基板2を乾燥させる乾燥工程が実行される(S309)。例えば、ターンテーブル112を回転させることにより、基板2に付着している液体が遠心力により外方へ飛ばされ、これによって基板2が乾燥される。すなわち、ターンテーブル112が、基板2の表面を乾燥させる乾燥機構としての機能を備えていてもよい。
この場合、他のめっき処理装置20において、基板2の表面に、置換めっきによりAuめっき処理が施される。Auめっき処理の方法は、めっき液および洗浄液が異なる点以外は、Pdめっき処理のための上述の方法と略同一であるので、詳細な説明は省略する。
このように、本実施の形態によれば、上述のように、基板2の表面にリンス処理液が残っている状態で、基板2を第1回転数で回転させ、基板2にめっき液35を供給することにより液置換を行う(液置換工程S305)。次に、基板2にめっき液35を供給し続けた状態で、基板2を停止または第2回転数で回転させて、基板2に初期成膜を行う(インキュベーション工程S306)。その後、基板2にめっき液35を供給し続けた状態で、基板2を第3回転数で回転させて、めっき膜を成長させる(めっき膜成長工程S307)。この場合、第1回転数は、第3回転数より回転数が高く、第3回転数は、第2回転数より回転数が高くなっている。例えば、第1回転数を100rpm~300rpmとし、第2回転数を0rpm~30rpmとし、第3回転数を30rpm~100rpmとしている。このことにより、とりわけめっき膜成長工程S307において、反応種濃度が低下しためっき液35を積極的に新しいめっき液35に置換し、安定しためっき成長を促進することができる。この結果、基板1枚あたりのめっき処理時間を短縮することができる。
Claims (9)
- 基板にめっき液を供給してめっき処理を行うめっき処理方法において、
前記基板の表面に前処理液が残っている状態で、前記基板を第1回転数で回転させ、前記基板にめっき液を供給することにより液置換を行う液置換工程と、
前記基板にめっき液を供給し続けた状態で、前記基板を停止または第2回転数で回転させて、前記基板に初期成膜を行うインキュベーション工程と、
前記基板にめっき液を供給し続けた状態で、前記基板を第3回転数で回転させて、めっき膜を成長させるめっき膜成長工程とを備え、
前記第1回転数は、前記第3回転数より回転数が高く、前記第3回転数は、前記第2回転数より回転数が高いことを特徴とするめっき処理方法。 - 前記第1回転数は100rpm~300rpmであることを特徴とする請求項1に記載のめっき処理方法。
- 前記第2回転数は0rpm~30rpmであることを特徴とする請求項1に記載のめっき処理方法。
- 前記第3回転数は30rpm~100rpmであることを特徴とする請求項1に記載のめっき処理方法。
- 前記液置換工程を行う時間より前記インキュベーション工程を行う時間の方が長く、前記インキュベーション工程を行う時間より前記めっき膜成長工程を行う時間の方が長いことを特徴とする請求項1に記載のめっき処理方法。
- めっき液は、吐出ノズルにより前記基板に対して供給され、前記液置換工程において、前記吐出ノズルは、前記基板の中心側から前記基板の周縁側に向けて移動されることを特徴とする請求項1に記載のめっき処理方法。
- めっき液は、CoPめっき液、CoWBめっき液、CoWPめっき液、CoBめっき液またはNiPめっき液を含むことを特徴とする請求項1に記載のめっき処理方法。
- 基板にめっき液を供給してめっき処理を行うめっき処理装置において、
基板を保持して回転させる基板回転保持機構と、
前記基板回転保持機構に保持された前記基板に向けてめっき液を吐出する吐出機構と、
前記吐出機構にめっき液を供給するめっき液供給機構と、
前記基板回転保持機構、前記吐出機構および前記めっき液供給機構を制御する制御機構と、を備え、
前記制御機構は、
前記基板の表面に前処理液が残っている状態で、前記基板回転保持機構により前記基板を第1回転数で回転させ、前記吐出機構により前記基板にめっき液を供給することにより液置換を行い、
前記吐出機構から前記基板にめっき液を供給し続けた状態で、前記基板回転保持機構により前記基板を停止または第2回転数で回転させて、前記基板に初期成膜を行い、
前記吐出機構から前記基板にめっき液を供給し続けた状態で、前記基板回転保持機構により前記基板を第3回転数で回転させて、めっき膜を成長させるように、前記基板回転保持機構、前記吐出機構および前記めっき液供給機構を制御し、
前記第1回転数は、前記第3回転数より回転数が高く、前記第3回転数は、前記第2回転数より回転数が高いことを特徴とするめっき処理装置。 - めっき処理装置にめっき処理方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
前記めっき処理方法は、基板にめっき液を供給してめっき処理を行う方法であって、
前記基板の表面に前処理液が残っている状態で、前記基板を第1回転数で回転させ、前記基板にめっき液を供給することにより液置換を行う液置換工程と、
前記基板にめっき液を供給し続けた状態で、前記基板を停止または第2回転数で回転させて、前記基板に初期成膜を行うインキュベーション工程と、
前記基板にめっき液を供給し続けた状態で、前記基板を第3回転数で回転させて、めっき膜を成長させるめっき膜成長工程とを備え、
前記第1回転数は、前記第3回転数より回転数が高く、前記第3回転数は、前記第2回転数より回転数が高い、方法を含むことを特徴とする記憶媒体。
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