WO2012138966A1 - Indirectly heated cathode cartridge design - Google Patents
Indirectly heated cathode cartridge design Download PDFInfo
- Publication number
- WO2012138966A1 WO2012138966A1 PCT/US2012/032476 US2012032476W WO2012138966A1 WO 2012138966 A1 WO2012138966 A1 WO 2012138966A1 US 2012032476 W US2012032476 W US 2012032476W WO 2012138966 A1 WO2012138966 A1 WO 2012138966A1
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- WO
- WIPO (PCT)
- Prior art keywords
- cylinder
- filament
- insulating support
- cartridge
- cathode
- Prior art date
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- Ceased
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/067—Replacing parts of guns; Mutual adjustment of electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/02—Electron-emitting electrodes; Cathodes
- H01J19/04—Thermionic cathodes
- H01J19/14—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/02—Electron-emitting electrodes; Cathodes
- H01J19/04—Thermionic cathodes
- H01J19/14—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J19/20—Supports for the emissive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/485—Construction of the gun or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/075—Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06375—Arrangement of electrodes
Definitions
- This disclosure relates to a method and mechanism for creating electrons, such as in a plasma flood gun, using an indirectly heated cathode contained in a cartridge,
- An electronic device may he created from a workpiece that has undergone various processes.
- One of these processes may include introducing impurities or dopants to alter the electrical properties of the original workpiece.
- charged ions as impurities or dopants, may be introduced to a workpiece, such as a silicon wafer, to alter electrical properties of the workpiece.
- One of the processes that introduces impurities to the workpiece may be an son implantation process.
- An ion implanter is used to perform ion implantation or other modifications of a workpiece.
- FIG. 1 A block diagram of a conventional ion implanter is shown in FIG, 1.
- the conventional ion implanter may comprise an ion source 102 that may be biased by a power supply 101.
- the system may be controlled by controller 120.
- the operator communicates with the controller 120 via user interface system 122,
- the ion source 102 is typically contained in a vacuum chamber known as a source housing (not shown).
- the ion implanter system 100 may also comprise a series of beam-line components through which ions 10 pass.
- the series of beam-line components may include, for example, extraction electrodes 104, a 90° magnet analyzer 106, a first deceleration (Dl) stage 108, a 70° magnet collimator 110, and a second deceleration (D2) stage 1 12.
- the beam-line components can manipulate and focus the ion beam 10 before steering it towards a workpiece or wafer 1 14, which is disposed on a workpiece support 1 16.
- a workpiece handling robot (not shown) disposes the workpiece 1 14 on the workpiece support 1 16 that can be moved in one or more dimensions (e.g., translate, rotate, and tilt) by an apparatus, sometimes referred to as a "roplat" (not shown).
- sons are generated in the ion source 102 and extracted by the extraction electrodes 104, The extracted ions 10 travel in a beam-like state along the beam-line components and implanted on the workpiece 1 14.
- the workpiece handling robot may remove the workpiece 1 14 from the workpiece support 116 and from the ion implanter 100.
- a i plasma flood gun (PFG) 117 is introduced near the workpiece 1 14. This plasma flood gun emits electrons into the ion beam in the direction of the workpiece 114,
- the electrons are produced in the plasma flood gun 1 17 through the use of a tungsten filament through which a current is passed. This current causes the filament to emit electrons. These electrons are then directed, such as by magnets or electrodes, to an aperture. After passing through the aperture, the electrons migrate toward the workpiece 1 14.
- the voltages needed by the plasma flood gun 1 17 are generated and supplied by a power supply I I S.
- This power supply 3 18 may be in communication with a controller (not shown) which determined the timing and magnitude of each voltage.
- voltages are generated for the filament, the arc and the bias within the plasma flood gun 1 17.
- FIG. 2A a top view is shown, while FIG. 2B shows a side view.
- the plasma flood gun 1 17 has two connection points 151, 152.
- a filament 153 having two contacts 154, 155 is plugged into the respective connection points 151, 152.
- These connection points 154, 155 are tied to different electrical potentials, thereby allowing current to flow through the filament 153.
- On the sides of the filament 153 are one or more magnets 156, that cause the electrons to spiral towards the walls. This spiral increases the path length of the electrons.
- electrode 157 has an aperture through which the electrons can exit.
- Dotted line 158 represents the emission plane in the device.
- the reference emission plane is related to the charging and the metals performance of the plasma flood gun 1 17 because the magnetic field generates specific trajectories and controls the emission points.
- the lifetime of the plasma flood gun 1 17 is usually limited by failures of the filaments 153, which are exposed to the plasma within the plasma flood gun 117. Replacement of the filament 153 is a time consuming operation. In addition, tungsten, the preferred material for the filament 153, may contaminate the workpiece 114.
- the apparatus includes an indirectly heated cathode (1HC) that is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun.
- an 1HC reduces the amount of contaminants that are injected into the workpiece or wafer.
- FIG. 1 represents a traditional ion implantation system
- FIG. 2 represents a block diagram showing a filament for use with a plasma flood gun in accordance with the prior ait
- FIG. 3 represents an IHC cartridge according to one embodiment
- FIG. 4 represents an exploded view of the components within the cartridge of FIG. 3;
- FIG. 5 represents the components of FIG. 4 as assembled
- FIG. 3A shows a side view of an IHC cartridge 200.
- FIG. 3B shows a top view of the IHC cartridge 200.
- the IHC cartridge 200 connects to the plasma flood gun (not shown) via two electrical contacts 201, 202.
- the cartridge 200 has a circular mating portion 210 at the end where it contacts the plasma flood gun, although the disclosure is not limited to this configuration.
- two fasteners 203, 204 are used to attach the mating portion 210 of the IHC cartridge 200 to the plasma flood gun.
- the IHC cartridge 200 extends from the mating portion 210 outwardly in a cylinder 220, which may be oblong or other shapes.
- This oblong cylinder preferable made from graphite, has a circular bore 230 contained therein.
- the components which comprise the IHC are housed within this circular bore 230, as will be described in more detail below.
- a cathode 240 typically made of tungsten or another metal having a high melting point, covers the distal end of the circular bore 230.
- this cathode 240 is electrically and physically isolated from the cylinder 220.
- FIG. 4 show the various components included in the cartridge 200, including those that are within the circular bore 230.
- FIG. 4 shows two electrical contacts 201, 202, which extend from the mounted end of the cartridge 200.
- the electrical contacts 201, 202 taper inwardly as they extend into the cylinder 220 in this particular embodiment. This may be to accommodate pre-existing connection points in the plasma flood gun. such as plasma flood gun 117 of FIG. 2.B.
- the electrical contacts 201, 202 are constructed of very high conductivity material, such as tungsten or tantalum, to minimize the heat and energy that is dissipated away from the distal end of the cylinder 220.
- extenders 241, 242 have hollow ends, such that the electrical contacts 201, 202 fit into the ends of the extenders 241, 242,
- the extenders 241, 242 are made from the same material as the electrical contacts 201, 202 to minimize heat and energy dissipation away from the distal end of the cylinder 220.
- the length of the extenders 241, 242 may also be defined so as to guarantee a specific, predetermined spacing between the insulating supports 251 , 252 when the components are assembled in the circular bore 230 (see FIG. 5).
- the extenders 241, 242 then connect to the filament 244, which may be u-shaped. As described above, the ends of the extenders 241 , 242 may have hollow ends, into which the ends of the filament 244 can be inserted. Unlike the contacts 201, 202 and the extenders 241, 242, the filament 244 should dissipate energy and heat, so as to generate electrons. As such, the filament 244 may be constructed of tungsten.
- These electrical components 248 (contacts 201 , 202, extenders 241, 242, and filament 244) all reside within the circular bore 230 when the cartridge 200 is assembled. These components are at voltage potentials that are different than the surrounding plasma flood gun, and therefore are preferably isolated from the oblong cylinder 220.
- One mechanism used to isolate the electrical components 248 is the use of insulating supports
- the insulating supports 251, 252 may be identical components, thereby reducing the number of different parts needed for the assembly.
- the insulating supports 251, 252 are of a length roughly equal to the diameter of the circular bore 230 into which they are located.
- the insulating supports 251, 252 may be made of any non-conductive material, including Al 2 i1 ⁇ 4.
- each fastening mechanism may be a threaded device 253, 254, such as a screw, that corresponds to a threaded opening in the insulating support 251 , 252.
- a pin 253, 254 is inserted into a sleeve in each insulating support 251 , 252.
- the screw or pin 253, 254 is inserted into a lateral bore 257 (see FIG. 3B) in the cylinder 220, and is screwed or pressed into the insulating supports 251. 252 located within the bore 230.
- the insulating supports 251 , 252 may also have bores 255, 256 through their width, which allow the passage of the electrical components 248. in some embodiments, these bores 255, 256 have a diameter greater than that of the contacts 102, 202 and the filament 244, but less than the extenders 241, 242. In this way. the extenders 241, 242 can be used to space the insulating supports 251 , 252 by a predetermined distance.
- a holder 261 is used to hold the cathode 271 in place.
- This holder 261 may be held in place with a fastener, such as the screw or pin 254 used to secure the insulating support. 252.
- the holder 261 also has an extended gripping mechanism 262.
- This gripping mechanism 262 is of a size suitable to hold the cathode 271 in place without any additional fastening devices.
- the connection between the holder 261 and the cathode 271 may be a press fit,
- the cathode 271 is attached to the holder 261 and during operation is maintained at a positive voltage. This causes the electrons from the filament to accelerate to the cathode. As these electrons bombard the cathode 271, its temperature increases, often to temperatures greater than 2000°C.
- the positive bias is created by electrically connecting the cathode 271 to a third electrical connection at the plasma flood gun. Because of the difference in voltage between the filament 244, the cathode 271 , and the cylinder 220, it is important that the insulating support 252 electrically isolate these components from one another.
- the cathode 271 is preferably made of tungsten, graphite, or a low work function material.
- FIG. 5 shows how these components are assembled.
- the insulating supports 251, 252 may be fabricated such that the diameters of the bores through these parts are greater than that of the contacts 201, 202 and the filament 244, but less than the diameter of the extenders 241, 242. This allows the extenders 241, 242 to be used to space the insulating supports 251, 252 apart.
- the filament 244 is connected to the distal ends of the extenders 241, 242, while the contacts 201, 202 are comiected to the proximate ends of the extenders 241, 242. The assembly of these components may be done at an earlier time, if a precise tolerance between the filament 244 and the extenders 241 , 242 is required.
- the electrical components 248 are assembled with the proximate support 251.
- This sub-assembly 265 is then slid into a second subassembly 266, which is made up of the holder 261 and the distal insulating support 252.
- the filament 244 slides through the distal insulating support 252.
- the cathode 271 is then press fit onto the holder 261.
- This entire subassembly, which includes subassembly 265 and subassembly 266, can then be slid into the bore 230. Screws or pins 254 are then inserted in lateral bores 257 to hold the insulating supports 251, 252 in the correct position.
- an endcap 280 may be placed over the distal end of the cylinder 220.
- the connection between the endcap 280 and the cylinder 220 may be a press fit. in other embodiments, the end cap 280 may press into a region defined in the plasma flood gun, such as plasma flood gun 117 of FTG. 1.
- This endcap 280 has at least one aperture (not shown) through which the emitted electrons flow toward the workpiece.
- the endcap 280 may have one, two, three or more apertures that control the amount of electrons emitted. The number of apertures also controls the amount of contamination from the cartridge 200.
- the voltages for the filament, arc and bias are connected from the atmosphere side of the plasma flood gun body 1 17 via a power supply 1 18 and controller, and are isolated from each other by the use of insulators.
- the cartridge 200 may be readily replaced in a plasma flood gun 1 17, and can also replace the filament 153 of the prior art.
- the old component either a cartridge 200 or a filament 153
- the new cartridge 200 which has been previously assembled, is then slid into the corresponding opening, and the electrical contacts 201, 202 are plugged into the electrical connections 151, 152.
- the end cap 280 is then placed over the cartridge and the plasma flood gun 117 is ready for use.
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- Analytical Chemistry (AREA)
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- Optics & Photonics (AREA)
- Electron Sources, Ion Sources (AREA)
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Abstract
An. apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an 1HC reduces the amount of contaminants that are injected into the workpiece or water.
Description
INDIRECTLY HEATED CATHODE CARTRIDGE
DESIGN
Field
This disclosure relates to a method and mechanism for creating electrons, such as in a plasma flood gun, using an indirectly heated cathode contained in a cartridge,
Backgroand An electronic device may he created from a workpiece that has undergone various processes.
One of these processes may include introducing impurities or dopants to alter the electrical properties of the original workpiece. For example, charged ions, as impurities or dopants, may be introduced to a workpiece, such as a silicon wafer, to alter electrical properties of the workpiece. One of the processes that introduces impurities to the workpiece may be an son implantation process.
An ion implanter is used to perform ion implantation or other modifications of a workpiece.
A block diagram of a conventional ion implanter is shown in FIG, 1. Of course, many different, ion implanters may be used. The conventional ion implanter may comprise an ion source 102 that may be biased by a power supply 101. The system may be controlled by controller 120. The operator communicates with the controller 120 via user interface system 122, The ion source 102 is typically contained in a vacuum chamber known as a source housing (not shown). The ion implanter system 100 may also comprise a series of beam-line components through which ions 10 pass. The series of beam-line components may include, for example, extraction electrodes 104, a 90° magnet analyzer 106, a first deceleration (Dl) stage 108, a 70° magnet collimator 110, and a second deceleration (D2) stage 1 12. Much like a series of optical lenses that manipulate a light beam, the beam-line components can manipulate and focus the ion beam 10 before steering it towards a workpiece or wafer 1 14, which is disposed on a workpiece support 1 16.
in operation, a workpiece handling robot (not shown) disposes the workpiece 1 14 on the workpiece support 1 16 that can be moved in one or more dimensions (e.g., translate, rotate, and tilt) by an apparatus, sometimes referred to as a "roplat" (not shown). Meanwhile, sons are generated in the ion source 102 and extracted by the extraction electrodes 104, The extracted ions 10 travel in a beam-like state along the beam-line components and implanted on the workpiece 1 14. After implanting ions is completed, the workpiece handling robot may remove the workpiece 1 14 from the workpiece support 116 and from the ion implanter 100.
In some embodiments, it snay be desirable to introduce electrons in the ion beam path, to reduce beam blowup and to reduce charge from the surface of the substrate. In some embodiments, a i
plasma flood gun (PFG) 117 is introduced near the workpiece 1 14. This plasma flood gun emits electrons into the ion beam in the direction of the workpiece 114,
In some embodiments, the electrons are produced in the plasma flood gun 1 17 through the use of a tungsten filament through which a current is passed. This current causes the filament to emit electrons. These electrons are then directed, such as by magnets or electrodes, to an aperture. After passing through the aperture, the electrons migrate toward the workpiece 1 14. The voltages needed by the plasma flood gun 1 17 are generated and supplied by a power supply I I S. This power supply 3 18 may be in communication with a controller (not shown) which determined the timing and magnitude of each voltage. In some embodiments, voltages are generated for the filament, the arc and the bias within the plasma flood gun 1 17.
Referring to FiGs. 2A-B, there is shown one embodiment of a filament used to produce electrons, in FIG. 2A, a top view is shown, while FIG. 2B shows a side view. In this embodiment, the plasma flood gun 1 17 has two connection points 151, 152. A filament 153, having two contacts 154, 155 is plugged into the respective connection points 151, 152. These connection points 154, 155 are tied to different electrical potentials, thereby allowing current to flow through the filament 153. On the sides of the filament 153 are one or more magnets 156, that cause the electrons to spiral towards the walls. This spiral increases the path length of the electrons. Although not shown, electrode 157 has an aperture through which the electrons can exit. Dotted line 158 represents the emission plane in the device. The reference emission plane is related to the charging and the metals performance of the plasma flood gun 1 17 because the magnetic field generates specific trajectories and controls the emission points.
The lifetime of the plasma flood gun 1 17 is usually limited by failures of the filaments 153, which are exposed to the plasma within the plasma flood gun 117. Replacement of the filament 153 is a time consuming operation. In addition, tungsten, the preferred material for the filament 153, may contaminate the workpiece 114.
It would be advantageous if there were an apparatus and method for producing electrons in a plasma food gun, which has increases reliability, is easier to replace, and does not contaminate the workpiece or wafer.
Summary
An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (1HC) that is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an 1HC reduces the amount of contaminants that are injected into the workpiece or wafer.
Brief Description of the Drawings
In order to facilitate a fuller understanding of the present disclosure, reference is now made to the accompanying drawings, in which like elements are referenced with like numerals, These drawings should not be construed as limiting the present disclosure, but are intended to be exemplary only.
FIG. 1 represents a traditional ion implantation system;
FIG. 2 represents a block diagram showing a filament for use with a plasma flood gun in accordance with the prior ait;
FIG. 3 represents an IHC cartridge according to one embodiment;
FIG. 4 represents an exploded view of the components within the cartridge of FIG. 3;
FIG, 5 represents the components of FIG. 4 as assembled;
Detailed Description
In the present disclosure, several embodiments of an apparatus and a method for producing electrons in a plasma flood gun. For purpose of clarity and simplicity, the present disclosure will focus on an apparatus and a method for introducing electrons to the surface of a workpiece that is processed by a beam-line ion implanter, Those skilled in the art, however, may recognize that the present disclosure is equally applicable to other types of processing systems. As such, the present disclosure is not to be limited in scope by the specific embodiments described herein.
As described above in FIG. I and 2, current implant systems utilize a plasma flood gun 117 to introduce electrons to the surface of a workpiece 1 14 to reduce charge on the workpiece, and to reduce "blowup" of the ion beam. As described above, current systems suffer many drawbacks including short lifetimes, and contaminant creation. FIG, 3A shows a side view of an IHC cartridge 200. FIG. 3B shows a top view of the IHC cartridge 200. As seen in FIG. 3 A, the IHC cartridge 200 connects to the plasma flood gun (not shown) via two electrical contacts 201, 202. in this embodiment, the cartridge 200 has a circular mating portion 210 at the end where it contacts the plasma flood gun, although the disclosure is not limited to this configuration. In some embodiments, two fasteners 203, 204 (see FIG. 3B) are used to attach the mating portion 210 of the IHC cartridge 200 to the plasma flood gun. In addition, the IHC cartridge 200 extends from the mating portion 210 outwardly in a cylinder 220, which may be oblong or other shapes. This oblong cylinder, preferable made from graphite, has a circular bore 230 contained therein. The components which comprise the IHC are housed within this circular bore 230, as will be described in more detail below. A cathode 240, typically made of tungsten or another metal having a high melting point, covers the distal end of the circular bore 230. In some embodiments, this cathode 240 is electrically and physically isolated from the cylinder 220.
FIG. 4 show the various components included in the cartridge 200, including those that are within the circular bore 230. FIG. 4 shows two electrical contacts 201, 202, which extend from the mounted end of the cartridge 200. In one particular embodiment, the electrical contacts 201, 202 taper inwardly as they extend into the cylinder 220 in this particular embodiment. This may be to accommodate pre-existing connection points in the plasma flood gun. such as plasma flood gun 117 of FIG. 2.B. In some embodiments, the electrical contacts 201, 202 are constructed of very high conductivity material, such as tungsten or tantalum, to minimize the heat and energy that is dissipated away from the distal end of the cylinder 220.
These electrical contacts 201. 202, are mated with extenders 241, 242. In some embodiments, the extenders 241, 242 have hollow ends, such that the electrical contacts 201, 202 fit into the ends of the extenders 241, 242, In some embodiments, the extenders 241, 242 are made from the same material as the electrical contacts 201, 202 to minimize heat and energy dissipation away from the distal end of the cylinder 220. The length of the extenders 241, 242 may also be defined so as to guarantee a specific, predetermined spacing between the insulating supports 251 , 252 when the components are assembled in the circular bore 230 (see FIG. 5).
The extenders 241, 242 then connect to the filament 244, which may be u-shaped. As described above, the ends of the extenders 241 , 242 may have hollow ends, into which the ends of the filament 244 can be inserted. Unlike the contacts 201, 202 and the extenders 241, 242, the filament 244 should dissipate energy and heat, so as to generate electrons. As such, the filament 244 may be constructed of tungsten.
These electrical components 248 (contacts 201 , 202, extenders 241, 242, and filament 244) all reside within the circular bore 230 when the cartridge 200 is assembled. These components are at voltage potentials that are different than the surrounding plasma flood gun, and therefore are preferably isolated from the oblong cylinder 220.
One mechanism used to isolate the electrical components 248 is the use of insulating supports
251 , 252. in one embodiment, two insulating supports are used, althoiigh other numbers of insulating supports are within the scope of the disclosure. In some embodiments, the insulating supports 251, 252 may be identical components, thereby reducing the number of different parts needed for the assembly. The insulating supports 251, 252 are of a length roughly equal to the diameter of the circular bore 230 into which they are located. The insulating supports 251, 252 may be made of any non-conductive material, including Al2i¼. In addition, each may have a fastening mechanism. In some embodiments, each fastening mechanism may be a threaded device 253, 254, such as a screw, that corresponds to a threaded opening in the insulating support 251 , 252. In another embodiment, a pin 253, 254 is inserted into a sleeve in each insulating support 251 , 252. In operation, the screw or pin 253, 254 is inserted into a lateral bore 257 (see FIG. 3B) in the cylinder 220, and is screwed or
pressed into the insulating supports 251. 252 located within the bore 230. The insulating supports 251 , 252 may also have bores 255, 256 through their width, which allow the passage of the electrical components 248. in some embodiments, these bores 255, 256 have a diameter greater than that of the contacts 102, 202 and the filament 244, but less than the extenders 241, 242. In this way. the extenders 241, 242 can be used to space the insulating supports 251 , 252 by a predetermined distance.
A holder 261 is used to hold the cathode 271 in place. This holder 261 may be held in place with a fastener, such as the screw or pin 254 used to secure the insulating support. 252. The holder 261 also has an extended gripping mechanism 262. This gripping mechanism 262 is of a size suitable to hold the cathode 271 in place without any additional fastening devices. For example, the connection between the holder 261 and the cathode 271 may be a press fit,
The cathode 271 is attached to the holder 261 and during operation is maintained at a positive voltage. This causes the electrons from the filament to accelerate to the cathode. As these electrons bombard the cathode 271, its temperature increases, often to temperatures greater than 2000°C. The positive bias is created by electrically connecting the cathode 271 to a third electrical connection at the plasma flood gun. Because of the difference in voltage between the filament 244, the cathode 271 , and the cylinder 220, it is important that the insulating support 252 electrically isolate these components from one another. The cathode 271 is preferably made of tungsten, graphite, or a low work function material.
Having described the components of the cartridge 200, FIG. 5 shows how these components are assembled. As explained above, the insulating supports 251, 252 may be fabricated such that the diameters of the bores through these parts are greater than that of the contacts 201, 202 and the filament 244, but less than the diameter of the extenders 241, 242. This allows the extenders 241, 242 to be used to space the insulating supports 251, 252 apart. The filament 244 is connected to the distal ends of the extenders 241, 242, while the contacts 201, 202 are comiected to the proximate ends of the extenders 241, 242. The assembly of these components may be done at an earlier time, if a precise tolerance between the filament 244 and the extenders 241 , 242 is required. The electrical components 248 are assembled with the proximate support 251. This sub-assembly 265 is then slid into a second subassembly 266, which is made up of the holder 261 and the distal insulating support 252. The filament 244 slides through the distal insulating support 252. The cathode 271 is then press fit onto the holder 261. This entire subassembly, which includes subassembly 265 and subassembly 266, can then be slid into the bore 230. Screws or pins 254 are then inserted in lateral bores 257 to hold the insulating supports 251, 252 in the correct position.
The cartridge 200 is fully assembled at this point. Finally, an endcap 280 may be placed over the distal end of the cylinder 220. The connection between the endcap 280 and the cylinder 220 may be a press fit. in other embodiments, the end cap 280 may press into a region defined in the plasma
flood gun, such as plasma flood gun 117 of FTG. 1. This endcap 280 has at least one aperture (not shown) through which the emitted electrons flow toward the workpiece. In some embodiments, the endcap 280 may have one, two, three or more apertures that control the amount of electrons emitted. The number of apertures also controls the amount of contamination from the cartridge 200. The voltages for the filament, arc and bias are connected from the atmosphere side of the plasma flood gun body 1 17 via a power supply 1 18 and controller, and are isolated from each other by the use of insulators.
The cartridge 200 may be readily replaced in a plasma flood gun 1 17, and can also replace the filament 153 of the prior art. in operation, the old component (either a cartridge 200 or a filament 153) is removed. The new cartridge 200, which has been previously assembled, is then slid into the corresponding opening, and the electrical contacts 201, 202 are plugged into the electrical connections 151, 152. The end cap 280 is then placed over the cartridge and the plasma flood gun 117 is ready for use.
The present disclosure is not to be limited in scope by the specific embodiments described herein. Indeed, other various embodiments of and modifications to the present disclosure, in addition to those described herein, will be apparent to those of ordinary skill in the art from the foregoing description and accompanying drawings. Thus, such other embodiments and modifications are intended to fall within the scope of the present disclosure. Further, although the present disclosure has been described herein in the context of a particular implementation in a particular environment for a particular purpose, those of ordinary skill in the art will recognize that its usefulness is not limited thereto and that the present disclosure may be beneficially implemented in any number of environments for any number of purposes.
Claims
1. A replaceable indirectly heated cathode (1HC) cartridge, comprising:
a cylinder, having a bore therethrough;
a filament positioned within said bore;
a first insulating support holding said filament in said cylinder, while keeping said filament electrically insulated from said cylinder; and
a cathode supported by said insulating support, such that said cathode is electrically insulated from said filament and said cylinder,
2. The IHC cartridge of claim 1, wherein said filament is electrically connected to an extender that is configured to be conductive, further comprising a second insulating support, wherein a length of said extender determines the spacing between said first insulating support and said second insulating support.
3. The IHC cartridge of claim 2, further comprising two lateral bores in said cylinder and two fasteners, each corresponding to one of said two lateral bores, such that said fasteners are inserted in said lateral bores and retain said first insulating support and said second insulating support at. fixed locations within said cylinder,
4. The IHC cartridge of claim 1, further comprising an endcap, adapted to fit over said cylinder, said endcap comprising an aperture through which electrons generated by said cathode are emitted,
5. The IHC cartridge of claim 4, wherein said endcap comprises a plurality of apertures.
6. An ion implantation device, comprising
an ion source:
a magnet analyzer;
at least one deceleration stage;
magnet collimator; and
a plasma flood gun, wherein said plasma flood gun further comprises an indirectly heated cathode (1HC) cartridge, adapted to generate and emit electrons toward a substrate.
7. The ion implantation device of claim 6, wherein said IHC cartridge comprises
a cylinder, having a bore therethrough;
a filament positioned within said bore, electrically connected to two contacts extending beyond said cylinder;
a first insulating support holding said filament in said cylinder, while keeping said filament electrically insulated from said cylinder; and a cathode supported by said insulating support, such that said cathode is electrically insulated from said filament and said cylinder,
8. The ion implantation device of claim 7, wherein said plasma flood gun comprises electrical connections, adapted to accommodate a filament, wherein said contacts of said iHC cartridge are positioned so as to connect to said electrical connections,
9. The ion implantation device of claim 7, wherein said filament is electrically connected to an extender that is configured to be conductive, further comprising a second insulating support, wherein a length of said extender determines the spacing between said first insulating support and said second insulating support.
10. The ion implantation device of claim 9, further comprising two lateral bores in said cylinder and two fasteners, each corresponding to one of said two lateral bores, such that said fasteners are inserted in said lateral bores and retain said first insulating support and said second insulating support at fixed locations within said cylinder,
11. The ion implantation device of claim 7, further comprising an endcap, adapted to fit over said cylinder, said endcap comprising an aperture through which electrons generated by said cathode are emitted.
12. The ion implantation device of claim 11, wherein said endcap comprises a plurality of apertures.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/082,495 | 2011-04-08 | ||
| US13/082,495 US9076625B2 (en) | 2011-04-08 | 2011-04-08 | Indirectly heated cathode cartridge design |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012138966A1 true WO2012138966A1 (en) | 2012-10-11 |
Family
ID=46026910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2012/032476 Ceased WO2012138966A1 (en) | 2011-04-08 | 2012-04-06 | Indirectly heated cathode cartridge design |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9076625B2 (en) |
| TW (1) | TW201246260A (en) |
| WO (1) | WO2012138966A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101692205B1 (en) * | 2015-05-15 | 2017-01-04 | 위너스 주식회사 | Source head for semiconductor equipment |
| US10347457B1 (en) * | 2017-12-19 | 2019-07-09 | Varian Semiconductor Equipment Associates, Inc. | Dynamic temperature control of an ion source |
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| JPH04144049A (en) * | 1990-10-04 | 1992-05-18 | Tel Varian Ltd | Ion implantation device |
| US20040031935A1 (en) * | 2002-08-13 | 2004-02-19 | Nissin Electric Co., Ltd. | Thermoelectron generating source and ion beam radiating apparatus with the same |
| US20110018423A1 (en) * | 2009-07-27 | 2011-01-27 | Terry Sheng | Indirect heated cathode of ion implanter |
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| US3240978A (en) * | 1962-05-11 | 1966-03-15 | Sylvania Electric Prod | Cathode assembly for an electron tube |
| US3214628A (en) * | 1962-06-11 | 1965-10-26 | Rca Corp | Cathode assembly for electron tube |
| US3983443A (en) * | 1975-03-24 | 1976-09-28 | Rca Corporation | Vacuum electron device having directly-heated matrix-cathode-heater assembly |
| CA1286710C (en) * | 1987-11-12 | 1991-07-23 | Atomic Energy Of Canada Limited - Energie Atomique Du Canada, Limitee | Electron gun design using a lanthanum hexaboride cathode |
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| US5221875A (en) * | 1992-05-12 | 1993-06-22 | Tektronix, Inc. | High resolution cathode-ray tube with high bandwidth capability |
| US5497006A (en) | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
| US7276847B2 (en) * | 2000-05-17 | 2007-10-02 | Varian Semiconductor Equipment Associates, Inc. | Cathode assembly for indirectly heated cathode ion source |
| GB0131097D0 (en) * | 2001-12-31 | 2002-02-13 | Applied Materials Inc | Ion sources |
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| US8253334B2 (en) * | 2010-07-19 | 2012-08-28 | Ion Technology Solutions, Llc | Ion source |
-
2011
- 2011-04-08 US US13/082,495 patent/US9076625B2/en active Active
-
2012
- 2012-03-29 TW TW101110948A patent/TW201246260A/en unknown
- 2012-04-06 WO PCT/US2012/032476 patent/WO2012138966A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3621324A (en) * | 1968-11-05 | 1971-11-16 | Westinghouse Electric Corp | High-power cathode |
| JPH04144049A (en) * | 1990-10-04 | 1992-05-18 | Tel Varian Ltd | Ion implantation device |
| US20040031935A1 (en) * | 2002-08-13 | 2004-02-19 | Nissin Electric Co., Ltd. | Thermoelectron generating source and ion beam radiating apparatus with the same |
| US20110018423A1 (en) * | 2009-07-27 | 2011-01-27 | Terry Sheng | Indirect heated cathode of ion implanter |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201246260A (en) | 2012-11-16 |
| US20120256097A1 (en) | 2012-10-11 |
| US9076625B2 (en) | 2015-07-07 |
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