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WO2012126427A3 - Laser with tunable outer cavity and method for using same - Google Patents

Laser with tunable outer cavity and method for using same Download PDF

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Publication number
WO2012126427A3
WO2012126427A3 PCT/CN2012/075816 CN2012075816W WO2012126427A3 WO 2012126427 A3 WO2012126427 A3 WO 2012126427A3 CN 2012075816 W CN2012075816 W CN 2012075816W WO 2012126427 A3 WO2012126427 A3 WO 2012126427A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical path
generation
path difference
collimating mirror
beams
Prior art date
Application number
PCT/CN2012/075816
Other languages
French (fr)
Chinese (zh)
Other versions
WO2012126427A2 (en
Inventor
陈波
高磊
张光勇
陈熙
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2012/075816 priority Critical patent/WO2012126427A2/en
Publication of WO2012126427A2 publication Critical patent/WO2012126427A2/en
Publication of WO2012126427A3 publication Critical patent/WO2012126427A3/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Abstract

A laser with tunable outer cavity and a method for using same, said laser with tunable outer cavity comprising a gain chip (100), a collimating mirror (200), a wavelength selection element (300), and an optical path for the generation of an optical path difference (400). A cavity surface (1002) of the gain chip is located in a focal plane of the collimating mirror. The wavelength selection element is located between the collimating mirror and the optical path for the generation of an optical path difference. Light beams emitted from the cavity surface of the gain chip are collimated by the collimating mirror to form parallel beams which are sent to the wavelength selection element; the wavelength selection element filters the parallel beams from the collimating mirror and then sends them to the optical path for the generation of an optical path difference. The optical path for the generation of an optical path difference splits the parallel beams entering same into at least two branch beams, and reflects each of said branch beams to the gain chip according to the incident direction. The optical path for the generation of an optical path difference is able to adjust the optical path difference between the optical paths of the branch beams. Since the optical path for the generation of an optical path difference serves to roughly select a mode, there is no need for precise control of adjustment and the process of wavelength tuning and selection is made easier.
PCT/CN2012/075816 2012-05-21 2012-05-21 Laser with tunable outer cavity and method for using same WO2012126427A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2012/075816 WO2012126427A2 (en) 2012-05-21 2012-05-21 Laser with tunable outer cavity and method for using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN 201280000837 CN102812602B (en) 2012-05-21 2012-05-21 Laser with tunable outer cavity and method for using same
PCT/CN2012/075816 WO2012126427A2 (en) 2012-05-21 2012-05-21 Laser with tunable outer cavity and method for using same

Publications (2)

Publication Number Publication Date
WO2012126427A2 WO2012126427A2 (en) 2012-09-27
WO2012126427A3 true WO2012126427A3 (en) 2013-04-18

Family

ID=46879803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/075816 WO2012126427A2 (en) 2012-05-21 2012-05-21 Laser with tunable outer cavity and method for using same

Country Status (2)

Country Link
CN (1) CN102812602B (en)
WO (1) WO2012126427A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529613A (en) * 2016-01-15 2016-04-27 北京工业大学 852nm ultra-narrow line width external-cavity semiconductor laser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030063633A1 (en) * 2001-09-28 2003-04-03 Zhang Guangzhi Z. Tunable laser with suppression of spontaneous emission
CN1524326A (en) * 2001-07-06 2004-08-25 英特尔公司 External cavity laser apparatus with orthogonal tuning of laser wavelength and cavity optical path length
US20060274808A1 (en) * 2005-06-01 2006-12-07 Pavilion Integration Corporation Method, apparatus and module using single laser diode for simultaneous pump of two gain media characteristic of polarization dependent absorption
CN202172209U (en) * 2011-08-30 2012-03-21 华为技术有限公司 External cavity tunable laser based on liquid crystal on silicon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1524326A (en) * 2001-07-06 2004-08-25 英特尔公司 External cavity laser apparatus with orthogonal tuning of laser wavelength and cavity optical path length
US20030063633A1 (en) * 2001-09-28 2003-04-03 Zhang Guangzhi Z. Tunable laser with suppression of spontaneous emission
US20060274808A1 (en) * 2005-06-01 2006-12-07 Pavilion Integration Corporation Method, apparatus and module using single laser diode for simultaneous pump of two gain media characteristic of polarization dependent absorption
CN202172209U (en) * 2011-08-30 2012-03-21 华为技术有限公司 External cavity tunable laser based on liquid crystal on silicon

Also Published As

Publication number Publication date
CN102812602A (en) 2012-12-05
WO2012126427A2 (en) 2012-09-27
CN102812602B (en) 2014-06-04

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