WO2012114587A1 - 近傍界ノイズ抑制シート - Google Patents
近傍界ノイズ抑制シート Download PDFInfo
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- WO2012114587A1 WO2012114587A1 PCT/JP2011/076196 JP2011076196W WO2012114587A1 WO 2012114587 A1 WO2012114587 A1 WO 2012114587A1 JP 2011076196 W JP2011076196 W JP 2011076196W WO 2012114587 A1 WO2012114587 A1 WO 2012114587A1
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- noise suppression
- field noise
- thin film
- metal thin
- surface resistance
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/265—Magnetic multilayers non exchange-coupled
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/526—Electromagnetic shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
Definitions
- the present invention relates to a near-field noise suppression sheet suitable for use in portable information terminals such as mobile phones and smartphones, electronic devices such as personal computers, and the like.
- noise suppression sheets contain a magnetic material and / or a conductive material.
- Japanese Patent Application Laid-Open No. 2010-153542 discloses a base material, a conductive layer made of a conductive coating material containing metal or carbon particles such as Cu, scales, or fine wires, and a soft magnetic material such as ferrite, sendust, and permalloy.
- seat which has a magnetic layer which consists of a magnetic coating material containing this is disclosed.
- JP-A-2006-278433 describes, for example, a calendar process comprising a soft magnetic powder such as amorphous flakes having a composition of Fe bal —Cu 1 —Si 12.5 —Nb 3 —Cr 1 —B 12 (atomic%) and a resin.
- a composite electromagnetic wave noise suppression sheet in which two or more sheets are laminated and integrated by calendering is disclosed.
- none of the noise suppression sheets disclosed in JP-A-2010-153542 and JP-A-2006-278433 has a sufficient ability to absorb near-field noise, and a magnetic material and / or a conductive material is kneaded into a resin. Therefore, there is a problem that it is difficult to reduce the thickness and the manufacturing cost is high.
- Japanese Patent Laid-Open No. 2006-279912 discloses that the reflection coefficient (S 11 ) is -10 dB or less and the noise suppression effect ( ⁇ P loss / P in ) is 0.5 or more for electromagnetic noise generated in the quasi-microwave band.
- sputtered thin films such as AlO, CoAlO, and CoSiO are disclosed as near-field electromagnetic wave noise suppressing thin films whose surface resistance is controlled to 10 to 1000 ⁇ / ⁇ to match the space characteristic impedance Z (377 ⁇ ).
- the electromagnetic wave absorbing ability of the near-field electromagnetic noise suppression thin film is not sufficient.
- Japanese Patent Laid-Open No. 2008-53383 describes a graphite film having different thermal conductivity in the plane direction and thickness direction, and soft magnetic materials such as Fe, Co, FeSi, FeNi, FeCo, FeSiAl, FeCrSi, and FeBSiC formed thereon
- an electromagnetic wave absorbing / shielding film excellent in heat dissipation characteristics comprising a soft magnetic layer containing Mn-Zn-based, Ba-Fe-based, Ni-Zn-based ferrite, and carbon particles.
- the electromagnetic wave absorbing ability of this radio wave absorbing / shielding film is not sufficient.
- Japanese Patent Laid-Open No. 2006-93414 discloses that a plastic substrate such as polyester (which may contain powders such as soft magnetic metal, carbon, and ferrite) is at least selected from the group consisting of iron, cobalt, and nickel by physical vapor deposition.
- a conductive noise suppressor having a conductive noise suppression layer having a thickness of 0.005 to 0.3 ⁇ m containing a kind of soft magnetic metal, the conductive noise suppression layer having a crystal lattice in which soft magnetic metal atoms are arranged at intervals of several angstroms
- a conduction noise suppressor is disclosed which comprises a portion, a very small portion of plastic alone without soft magnetic metal, and a portion in which the soft magnetic metal is not crystallized and dispersed in the plastic.
- the conduction noise suppression layer is a single layer, and it is difficult to control the film thickness. Therefore, in most embodiments, a soft magnetic metal is blended in the plastic substrate. Moreover, in the only Example 4 using the plastic base
- an object of the present invention is to provide a low-cost near-field noise suppression sheet having a stable and high absorption capability for electromagnetic noise of several hundred MHz to several GHz.
- the present inventor found that (a) when the film thickness of the metal thin film formed on the plastic film was adjusted so that the surface resistance was 20 to 150 ⁇ / ⁇ , it was excellent against near field noise Although metal thin films with surface resistance of 20 to 150 ⁇ / ⁇ are very thin, it is difficult to avoid large variations in surface resistance between the same and different production lots. And (b) ⁇ ⁇ When a pair of plastic films having such a thin metal thin film are bonded with a conductive adhesive with the metal thin film inside, a metal thin film having a desired surface resistance is greatly reduced in variation in surface resistance. The present inventors have found that a sheet can be stably obtained and arrived at the present invention.
- the near-field noise suppression sheet of the present invention is formed by bonding a pair of plastic films having a metal thin film formed on one side with a conductive adhesive with the metal thin film inside, and each metal thin film is made of a magnetic metal. And the thickness of each metal thin film is adjusted so that the surface resistance of the pair of metal thin films is 20 to 150 ⁇ / ⁇ .
- the magnetic metal is preferably Ni, Fe, Co or an alloy thereof, and particularly preferably Ni.
- the thicknesses of both metal thin films are preferably in the range of 10 to 30 nm.
- the surface resistance of the pair of bonded metal thin films is preferably 30 to 80 ⁇ / ⁇ .
- the metal thin film is preferably formed by a vacuum deposition method.
- the near-field noise suppression sheet of the present invention having the above configuration has a high absorption capacity for near-field noise of several hundred MHz to several GHz, and there is a variation in surface resistance even though each metal thin film is very thin. It is significantly reduced, and has the advantage that there is very little variation between products in terms of electromagnetic wave absorption ability.
- the near-field noise suppression sheet of the present invention having such characteristics is effective for suppressing near-field noise in various portable information terminals such as mobile phones and smartphones and electronic devices such as personal computers.
- FIG. 5 (a) is a cross-sectional view taken along line AA.
- FIG. 7 (a) is a schematic partial sectional view showing the system of FIG. It is a fragmentary sectional schematic diagram which shows the method of measuring the internal decoupling rate of a near field noise suppression sheet
- seat. 6 is a graph showing the transmission attenuation rate Ptp of the near-field noise suppression sheet of Examples 1 to 3.
- 6 is a graph showing the noise absorption rate P loss / P in of the near-field noise suppression sheets of Examples 1 to 3.
- 6 is a graph showing the internal decoupling rate Rda of the near-field noise suppression sheets of Examples 1 to 3.
- 6 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheets of Examples 1 to 3.
- 6 is a graph showing the noise absorption rate P loss / P in of the near-field noise suppression sheets of Example 1 and Comparative Examples 1 and 2.
- 6 is a graph showing the internal decoupling rate Rda of the near-field noise suppression sheets of Comparative Examples 1 and 2.
- 6 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheets of Comparative Examples 1 and 2.
- 6 is a graph showing the transmission attenuation rate Ptp of the near-field noise suppression sheet of Examples 4 and 5.
- 6 is a graph showing the noise absorption rate P loss / P in of the near-field noise suppression sheets of Examples 4 and 5.
- 6 is a graph showing an internal decoupling rate Rda of the near-field noise suppression sheet of Examples 4 and 5.
- 6 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheets of Examples 4 and 5.
- 6 is a graph showing the transmission attenuation rate Ptp of the near-field noise suppression sheet of Example 6 and Comparative Examples 3 and 4.
- 6 is a graph showing the noise absorption rate P loss / P in of the near-field noise suppression sheets of Example 6 and Comparative Examples 3 and 4.
- 6 is a graph showing the internal decoupling rate Rda of the near-field noise suppression sheet of Example 6 and Comparative Examples 3 and 4.
- 6 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheets of Example 6 and Comparative Examples 3 and 4.
- 6 is a graph showing the noise absorption rate P loss / P in of the near-field noise suppression sheets of Example 1 and Examples 7 and 8.
- 12 is a graph showing transmission attenuation factors Ptp, S 11 and S 21 of the near-field noise suppression sheet of Example 7.
- 10 is a graph showing an internal decoupling rate Rda of the near-field noise suppression sheet of Example 7.
- 10 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheet of Example 7.
- 10 is a graph showing transmission attenuation factors Ptp, S 11 and S 21 of the near-field noise suppression sheet of Example 8.
- 10 is a graph showing an internal decoupling rate Rda of the near-field noise suppression sheet of Example 8.
- 10 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheet of Example 8.
- 10 is a graph showing the transmission attenuation rate Ptp of the near-field noise suppression sheets of Comparative Examples 5 to 7.
- 10 is a graph showing the noise absorption rate P loss / P in of the near-field noise suppression sheets of Comparative Examples 5 to 7.
- 10 is a graph showing internal decoupling rate Rda of the near-field noise suppression sheets of Comparative Examples 5 to 7.
- 8 is a graph showing the mutual decoupling rate Rde of the near-field noise suppression sheets of Comparative Examples 5 to 7.
- the near-field noise suppression sheet 10 of the present invention is a first composed of a plastic film 1a having a metal thin film 1b formed on one surface.
- This sheet 1 and a second sheet 2 made of a plastic film 2a having a metal thin film 2b formed on one surface are bonded via a conductive adhesive 3.
- each plastic film 1a, 2a is not particularly limited as long as it has insulation, sufficient strength, flexibility and processability.
- polyester polyethylene terephthalate, etc.
- polyarylene sulfide Polyphenylene sulfide, etc.
- polyether sulfone polyether ether ketone
- polycarbonate acrylic resin
- acrylic resin polystyrene
- polyolefin polyethylene, polypropylene, etc.
- the thickness of the plastic film may be about 10-30 ⁇ m.
- Each metal thin film 1b, 2b is made of a magnetic metal.
- the magnetic metal include Ni, Fe, Co, and alloys thereof.
- the metal thin film 1b may be a single layer or a multilayer of different magnetic metals, but is preferably a single layer of Ni in consideration of corrosion resistance.
- the metal thin film can be formed by a known method such as a sputtering method or a vacuum evaporation method, but the vacuum evaporation method is preferable.
- the thin films 1b and 2b made of magnetic metal become thin and have a surface resistance of 20 to 150 ⁇ / ⁇ after lamination via the conductive adhesive 3, high-frequency near-field noise, specifically 6 GHz
- the ability to absorb near-field noise, particularly 1 to 3 GHz is remarkably increased.
- the metal thin film 1b is very thin and thus has an overall thickness unevenness, compared with the relatively thick region 1b 1.
- Thin region (including a portion where a metal thin film is not formed) 1b 2 It is considered that the relatively thin region 1b 2 acts as a magnetic gap and a high resistance region, and attenuates magnetic flux and current flowing in the metal thin film 1b due to near-field noise.
- the thickness of each of the metal thin films 1b and 2b is adjusted so as to have a surface resistance of 20 to 150 ⁇ / ⁇ after lamination through the conductive adhesive 3.
- the thickness of the metal thin films 1b and 2b is preferably 10 to 30 nm, more preferably 15 to 30 nm, and most preferably 20 to 30 nm.
- the surface resistance of each metal thin film 1b, 2b is measured by the DC four-terminal method as shown in FIG.
- the metal thin films 1b and 2b not only increase the surface resistance as they become thinner, but also have a tendency for the variation in the surface resistance to become remarkably large. Variation in surface resistance exists not only between product lots, but also within the same deposited film product. Such variation is considered to be because it is difficult to accurately control the manufacturing conditions of a very thin metal thin film.
- the surface resistance changes as shown in Table 1 and FIG. 6 with respect to the target film thickness.
- the target film thickness is obtained from the difference between the light transmittance of the plastic film on which the metal thin film is formed and the light transmittance of the plastic film itself.
- Conductive adhesive The conductive adhesive 3 that bonds the pair of metal thin films 1b and 2b is made of epoxy resin, silicone resin, polyimide, polyurethane, etc., binder, silver powder, gold powder, copper powder, palladium powder, nickel powder. And a conductive filler such as carbon powder.
- the volume resistivity of typical conductive adhesives and the connection resistance between Ni and the conductive adhesives are as shown in Tables 2 and 3 below.
- a pair of Ni thin films with various film thicknesses are bonded using a silver paste (“Dotite” manufactured by Fujikura Kasei Co., Ltd.) as a conductive adhesive at a coating amount of 1.5 g / m 2 on a solid content basis.
- the surface resistance is as shown in Table 4.
- Table 4 when two Ni thin films are bonded via the conductive adhesive 3, not only the surface resistance is lowered, but also the variation is significantly reduced. A noise suppression sheet can be obtained stably.
- the surface resistance of the bonded metal thin film is preferably 24 to 80 ⁇ / ⁇ , more preferably 30 to 80 ⁇ / ⁇ , and most preferably 35 to 60 ⁇ / ⁇ .
- the coating amount of the conductive adhesive 3 is preferably as small as possible unless both sheets are peeled off during handling. Specifically, the coating amount (based on solid content) of the conductive adhesive is preferably 0.5 to 5 g / m 2, and more preferably 1 to 2 g / m 2 .
- the internal decoupling ratio Rda indicates how much the coupling within the same printed circuit board is attenuated by the noise suppression sheet, and is connected to the network analyzer NA as shown in Fig. 8.
- Mutual decoupling ratio Rde indicates how much the coupling between two printed circuit boards or components is attenuated by the noise suppression sheet.
- Examples 1 to 3 A Ni thin film 1b having a thickness shown in Table 5 below was formed on a PET film 1a having a thickness of 16 ⁇ m by a vacuum deposition method, whereby a first sheet 1 was obtained. Similarly, a Ni thin film 2b having a thickness shown in Table 5 below was formed on a PET film 2a having a thickness of 16 ⁇ m, whereby a second sheet 2 was obtained. First and second sheets 1 and 2 with Ni thin films 1b and 2b inside, 1.5 g / m 2 silver paste (“Dotite” manufactured by Fujikura Kasei Co., Ltd.) as a conductive adhesive based on solid content was adhered using.
- 1.5 g / m 2 silver paste (“Dotite” manufactured by Fujikura Kasei Co., Ltd.) as a conductive adhesive based on solid content was adhered using.
- a test piece TP of the near-field noise suppression sheet was cut out from any five locations of the obtained laminated sheet.
- the surface resistance of each test piece TP was measured by the method shown in FIGS. 5 (a) and 5 (b).
- the range and average value of the surface resistance are shown in Table 5 together with the thickness of each Ni thin film. As is apparent from Table 5, the variation in the surface resistance of each example was small.
- the near-field noise suppression sheets of Examples 1 to 3 have a good transmission attenuation rate Rtp, but the near-field noise suppression sheet of Example 1 having a surface resistance of 40 ⁇ / ⁇ is the most. A good transmission attenuation factor Rtp is shown.
- the near-field noise suppression sheets of Examples 1 to 3 were all good, particularly from about 1 GHz to 0.8 or more.
- the near-field noise suppression sheets of Examples 1 to 3 all showed good internal decoupling rate Rda and mutual decoupling rate Rde. From this, it can be seen that the near-field noise suppression sheets of Examples 1 to 3 have excellent noise attenuation capability in a wide frequency range including a low frequency range of 1 to 3 GHz.
- Comparative Examples 1 and 2 A commercially available noise suppression sheet NSS with a thickness of 200 ⁇ m (“HyperShield” manufactured by Daido Steel Co., Ltd.) (Comparative Example 1) and a commercially available noise suppression sheet NSS with a thickness of 100 ⁇ m (Bastradade manufactured by NEC Tokin Corporation) (Comparison) For Example 2), the noise absorption rate P loss / P in , the internal decoupling rate Rda, and the mutual decoupling rate Rde were determined in the same manner as in Example 1.
- the noise absorption rate P loss / P in is shown in FIG. 14, the internal decoupling rate Rda is shown in FIG. 15, and the mutual decoupling rate Rde is shown in FIG. As apparent from FIG.
- a Ni thin film 1b having a thickness shown in Table 6 below was formed on a PET film 1a having a thickness of 16 ⁇ m by a vacuum deposition method, whereby a first sheet 1 was obtained.
- a Ni thin film 2b having a thickness shown in Table 6 below was formed on a PET film 2a having a thickness of 16 ⁇ m, whereby a second sheet 2 was obtained.
- the first and second sheets 1 and 2 were bonded using the same conductive adhesive as in Example 1 with the Ni thin films 1b and 2b inside.
- a test piece TP of the near-field noise suppression sheet was cut out from any five locations of the obtained laminated sheet.
- the surface resistance of each test piece TP was measured by the method shown in FIGS. 5 (a) and 5 (b).
- the range and average value of the surface resistance are shown in Table 6 together with the thickness of each Ni thin film. As is apparent from Table 6, the variation in the surface resistance of each example was small.
- the transmission attenuation rate Rtp, noise absorption rate P loss / P in , internal decoupling rate Rda, and mutual decoupling rate Rde were determined by the same method as in Example 1.
- FIG. 17 shows the transmission attenuation rate Rtp
- FIG. 18 shows the noise absorption rate P loss / P in
- FIG. 19 shows the internal decoupling rate Rda
- FIG. 20 shows the mutual decoupling rate Rde.
- the near-field noise suppression sheets of Examples 4 and 5 having surface resistances of 100 ⁇ / ⁇ and 150 ⁇ / ⁇ both have a good transmission attenuation factor Rtp, but the surface resistance is 40 to 81 ⁇ / ⁇ .
- the near-field noise suppression sheets of Examples 4 and 5 both have a high noise absorption rate P loss / P in that is 0.8 or more from around 1 GHz, and a good internal reduction. It had a coupling rate Rda and a mutual decoupling rate Rde. From this, it can be seen that the near-field noise suppression sheets of Examples 4 and 5 also have a wide and excellent noise attenuation capability in a wide frequency range including a low frequency range of 1 to 3 GHz.
- Example 6 Comparative Examples 3 and 4
- a Ni thin film 1b having a thickness shown in Table 7 below was formed on a PET film 1a having a thickness of 16 ⁇ m by a vacuum deposition method, whereby a first sheet 1 was obtained.
- a Ni thin film 2b having a thickness shown in Table 7 below was formed on a PET film 2a having a thickness of 16 ⁇ m, whereby a second sheet 2 was obtained.
- the first and second sheets 1 and 2 were bonded using the same conductive adhesive as in Example 1 with the Ni thin films 1b and 2b inside.
- a test piece TP of the near-field noise suppression sheet was cut out from any five locations of the obtained laminated sheet. The surface resistance of each test piece TP was measured by the method shown in FIGS.
- the transmission attenuation rate Rtp, noise absorption rate P loss / P in , internal decoupling rate Rda, and mutual decoupling rate Rde were determined by the same method as in Example 1.
- FIG. 21 shows the transmission attenuation rate Rtp
- FIG. 22 shows the noise absorption rate P loss / P in
- FIG. 23 shows the internal decoupling rate Rda
- FIG. 24 shows the mutual decoupling rate Rde.
- the near-field noise suppression sheet of Example 6 having a surface resistance of 24 ⁇ / ⁇ has a good transmission attenuation factor Rtp, but the near-field noise of Comparative Example 3 having a surface resistance of 4.5 ⁇ / ⁇ .
- the transmission attenuation factor Rtp of the suppression sheet and the near-field noise suppression sheet of Comparative Example 4 having a surface resistance of 4.1 ⁇ / ⁇ was inferior.
- the near-field noise suppression sheet of Example 6 had a high noise absorption rate P loss / P in even in the low frequency range of 1 to 3 GHz, but it was in the vicinity of Comparative Examples 3 and 4.
- the noise absorption rate P loss / P in of the field noise suppression sheet was low.
- the near-field noise suppression sheets of Comparative Examples 3 and 4 were significantly inferior to those of Example 6. From this, it can be seen that when the surface resistance is less than 20 ⁇ / ⁇ , the transmission attenuation rate Rtp, the noise absorption rate P loss / P in and the mutual decoupling rate Rde decrease.
- Examples 7 and 8 A Ni thin film 1b having a thickness shown in Table 8 below was formed on a PET film 1a having a thickness of 16 ⁇ m by a vacuum deposition method, whereby a first sheet 1 was obtained. Similarly, a Ni thin film 2b having a thickness shown in Table 6 below was formed on a PET film 2a having a thickness of 16 ⁇ m, whereby a second sheet 2 was obtained. The first and second sheets 1 and 2 were bonded using the same conductive adhesive as in Example 1 with the Ni thin films 1b and 2b inside. A test piece TP of the near-field noise suppression sheet was cut out from any five locations of the obtained laminated sheet. The surface resistance of each test piece TP was measured by the method shown in FIGS. 5 (a) and 5 (b). The range and average value of the surface resistance are shown in Table 8 together with the thickness of each Ni thin film. As is clear from Table 8, the variation in surface resistance of each example was small.
- FIG. 25 shows the noise absorption rate P loss / P in obtained by the same method as in Example 1.
- the transmission attenuation rate Rtp, internal decoupling rate Rda, and mutual decoupling rate Rde of Example 7 are shown in FIGS. 26 to 28, respectively, and the transmission attenuation rate Rtp, internal decoupling rate Rda, and mutual decoupling rate Rde of Example 8 are shown. They are shown in FIGS. 29 to 31, respectively.
- the noise absorptance P loss / P in of Examples 7 and 8 is as good as that of Example 1, from about 1 GHz to 0.8 or more.
- FIGS. 25 shows the noise absorption rate P loss / P in obtained by the same method as in Example 1.
- both of the near-field noise suppression sheets of Examples 7 and 8 had good transmission attenuation rate Rtp internal decoupling rate Rda and mutual decoupling rate Rde. From this, it can be seen that the near-field noise suppression sheets of Examples 7 and 8 having surface resistances of 44 ⁇ / ⁇ and 33 ⁇ / ⁇ also have excellent noise attenuation capability over a wide frequency range including a low frequency range of 1 to 3 GHz.
- Comparative Examples 5-7 A test piece TP of the near-field noise suppression sheet of Comparative Examples 5 and 7 consisting only of the first sheet 1 by forming the Ni thin film 1b having the thickness shown in Table 9 below on the PET film 1a having a thickness of 16 ⁇ m by vacuum deposition. was made. Further, a first sheet 1 formed by forming a Ni thin film 1b having a thickness shown in Table 10 below by vacuum deposition on a PET film 1a having a thickness of 16 ⁇ m and a PET film 2a having a thickness of 16 ⁇ m shown in Table 9 below.
- the second sheet 2 formed with the Ni thin film 2b having a thickness is bonded using the same conductive adhesive as in Example 1 with the Ni thin films 1b and 2b inside, and the near field of Comparative Example 6
- a test piece TP of a noise suppression sheet was prepared.
- the surface resistance of each test piece TP was measured by the method shown in FIGS. 5 (a) and 5 (b). The results are shown in Table 9.
- the transmission attenuation rate Rtp, noise absorption rate P loss / P in , internal decoupling rate Rda, and mutual decoupling rate Rde were determined by the same method as in Example 1.
- the transmission attenuation rate Rtp is shown in FIG. 32
- the noise absorption rate P loss / P in is shown in FIG. 33
- the internal decoupling rate Rda is shown in FIG. 34
- the mutual decoupling rate Rde is shown in FIG.
- FIGS. 32 and 33 all of the near-field noise suppression sheets of Comparative Examples 5 to 7 have a remarkably low transmission attenuation rate Rtp, and the noise absorption rate P loss / P in of Comparative Example 7 is also low. From this, it can be seen that the near-field noise suppression sheets of Comparative Examples 5 to 7 are inferior in transmission attenuation rate Rtp and noise absorption rate P loss / P in .
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Abstract
Description
図1及び図2に示すように、本発明の近傍界ノイズ抑制シート10は、一方の面に金属薄膜1bが形成されたプラスチックフィルム1aからなる第一のシート1と、一方の面に金属薄膜2bが形成されたプラスチックフィルム2aからなる第二のシート2とを導電性接着剤3を介して接着してなる。
各プラスチックフィルム1a、2aを形成する樹脂は、絶縁性とともに十分な強度、可撓性及び加工性を有する限り特に制限されず、例えばポリエステル(ポリエチレンテレフタレート等)、ポリアリーレンサルファイド(ポリフェニレンサルファイド等)、ポリエーテルサルフォン、ポリエーテルエーテルケトン、ポリカーボネート、アクリル樹脂、ポリスチレン、ポリオレフィン(ポリエチレン、ポリプロピレン等)等が挙げられる。プラスチックフィルムの厚さは10~30μm程度で良い。
各金属薄膜1b,2bは磁性金属からなる。磁性金属としてはNi,Fe,Co又はその合金が挙げられる。金属薄膜1bは単層でも異なる磁性金属の多層でも良いが、耐食性を考慮してNiの単層とするのが好ましい。金属薄膜はスパッタリング法、真空蒸着法等の公知の方法により形成することができるが、真空蒸着法が好ましい。
一対の金属薄膜1b,2bを接着する導電性接着剤3は、エポキシ樹脂、シリコーン樹脂、ポリイミド、ポリウレタン等をバインダーとし、銀粉、金粉、銅粉、パラジウム粉、ニッケル粉、カーボン粉等の導電性フィラーを配合してなる。代表的な導電性接着剤の体積抵抗率、及びNiと導電性接着剤との接続抵抗は下記表2及び表3に示す通りである。
このように、非常に薄い目標膜厚で形成された金属薄膜の表面抵抗は大きくばらつくので、金属薄膜を形成した一枚のプラスチックフィルムで所望の表面抵抗の近傍界ノイズ抑制シートとするのは非常に困難である。表面抵抗のバラツキは近傍界ノイズの吸収能のバラツキを引き起す。鋭意研究の結果、一対の金属薄膜1b,2bを導電性接着剤3を介して接着すると、表面抵抗のバラツキが予想以上に低減することが分った。本発明の近傍界ノイズ抑制シートは、かかる発見に基づき得られたものである。
(1) 伝送減衰率の測定
伝送減衰率Rtpは、図7(a) 及び図7(b) に示すように、50ΩのマイクロストリップラインMSL(64.4 mm×4.4 mm)と、マイクロストリップラインMSLを支持する絶縁基板200と、絶縁基板200の下面に接合された接地グランド電極201と、マイクロストリップラインMSLの両端に接続された導電性ピン202,202と、ネットワークアナライザNAと、ネットワークアナライザNAを導電性ピン202,202に接続する同軸ケーブル203,203とで構成されたシステムを用い、マイクロストリップラインMSLにノイズ抑制シートの試験片TPを粘着剤により貼付し、0.1~6 GHzの入射波に対して、反射波S11の電力及び透過波S21の電力を測定し、下記式:
Rtp=-10×log[10S21/10/(1-10S11/10)]
により求める。
図7(a) 及び図7(b) に示すシステムに入射した電力から反射波S11の電力及び透過波S21の電力を差し引くことにより、電力損失Plossを求め、Plossを入射電力Pinで割ることによりノイズ吸収率Ploss/Pinを求める。
内部減結合率Rdaは、同じプリント基板内での結合がノイズ抑制シートによりどの程度減衰するかを示すもので、図8に示すように、ネットワークアナライザNAに接続した一対のループアンテナ301,302の近傍にノイズ抑制シートの試験片TPを載置し、0~6 GHzの高周波信号が一方のループアンテナ301から他方のループアンテナ302に送信されるときの減衰率を測定することにより求める。
相互減結合率Rdeは、2つのプリント基板間又は部品間での結合がノイズ抑制シートによりどの程度減衰するかを示すもので、図9に示すように、ネットワークアナライザNAに接続した一対のループアンテナ301,302の間にノイズ抑制シートの試験片TPを載置し、0~6 GHzの高周波信号が一方のループアンテナ301から他方のループアンテナ302に送信されるときの減衰率を測定することにより求める。
厚さ16μmのPETフィルム1aに真空蒸着法により下記表5に示す厚さのNi薄膜1bを形成し、第一のシート1を得た。同様に厚さ16μmのPETフィルム2aに下記表5に示す厚さのNi薄膜2bを形成し、第二のシート2を得た。第一及び第二のシート1,2を、Ni薄膜1b,2bを内側にして、導電性接着剤として固形分基準で1.5 g/m2の銀ペースト(藤倉化成株式会社製の「ドータイト」)を用いて接着した。得られた積層シートの任意の5箇所から、近傍界ノイズ抑制シートの試験片TPを切り出した。各試験片TPの表面抵抗を図5(a) 及び図5(b) に示す方法により測定した。表面抵抗の範囲及び平均値を、各Ni薄膜の厚さとともに表5に示す。表5から明らかなように、各実施例の表面抵抗のバラツキは小さかった。
厚さ200μmの市販のノイズ抑制シートNSS(大同特殊鋼株式会社製の「HyperShield」)(比較例1)、及び厚さ100μmの市販のノイズ抑制シートNSS(NECトーキン株式会社製のバスタレイド)(比較例2)に対して、実施例1と同様にしてノイズ吸収率Ploss/Pin、内部減結合率Rda及び相互減結合率Rdeを求めた。ノイズ吸収率Ploss/Pinを図14に示し、内部減結合率Rdaを図15に示し、相互減結合率Rdeを図16に示す。図14から明らかなように、比較例1及び2のノイズ抑制シートのノイズ吸収率Ploss/Pinは実施例1のものより劣っていた。また図15及び図16から明らかなように、比較例1及び2のノイズ抑制シートの内部減結合率Rda及び相互減結合率Rdeはいずれも劣っていた。
厚さ16μmのPETフィルム1aに真空蒸着法により下記表6に示す厚さのNi薄膜1bを形成し、第一のシート1を得た。同様に厚さ16μmのPETフィルム2aに下記表6に示す厚さのNi薄膜2bを形成し、第二のシート2を得た。第一及び第二のシート1,2を、Ni薄膜1b,2bを内側にして、実施例1と同じ導電性接着剤を用いて接着した。得られた積層シートの任意の5箇所から、近傍界ノイズ抑制シートの試験片TPを切り出した。各試験片TPの表面抵抗を図5(a) 及び図5(b) に示す方法により測定した。表面抵抗の範囲及び平均値を、各Ni薄膜の厚さとともに表6に示す。表6から明らかなように、各実施例の表面抵抗のバラツキは小さかった。
厚さ16μmのPETフィルム1aに真空蒸着法により下記表7に示す厚さのNi薄膜1bを形成し、第一のシート1を得た。同様に厚さ16μmのPETフィルム2aに下記表7に示す厚さのNi薄膜2bを形成し、第二のシート2を得た。第一及び第二のシート1,2を、Ni薄膜1b,2bを内側にして、実施例1と同じ導電性接着剤を用いて接着した。得られた積層シートの任意の5箇所から、近傍界ノイズ抑制シートの試験片TPを切り出した。各試験片TPの表面抵抗を図5(a) 及び図5(b) に示す方法により測定した。表面抵抗の範囲及び平均値を、各Ni薄膜の厚さとともに表7に示す。表7から明らかなように、実施例6の表面抵抗のバラツキは小さかった。比較例3及び4の表面抵抗はほとんどバラツキがなかったが、約4Ω/□と小さかったので、後述の通り近傍界ノイズの吸収能が著しく劣っていた。
厚さ16μmのPETフィルム1aに真空蒸着法により下記表8に示す厚さのNi薄膜1bを形成し、第一のシート1を得た。同様に厚さ16μmのPETフィルム2aに下記表6に示す厚さのNi薄膜2bを形成し、第二のシート2を得た。第一及び第二のシート1,2を、Ni薄膜1b,2bを内側にして、実施例1と同じ導電性接着剤を用いて接着した。得られた積層シートの任意の5箇所から、近傍界ノイズ抑制シートの試験片TPを切り出した。各試験片TPの表面抵抗を図5(a) 及び図5(b) に示す方法により測定した。表面抵抗の範囲及び平均値を、各Ni薄膜の厚さとともに表8に示す。表8から明らかなように、各実施例の表面抵抗のバラツキは小さかった。
厚さ16μmのPETフィルム1aに真空蒸着法により下記表9に示す厚さのNi薄膜1bを形成し、第一のシート1のみからなる比較例5及び7の近傍界ノイズ抑制シートの試験片TPを作製した。また、厚さ16μmのPETフィルム1aに真空蒸着法により下記表10に示す厚さのNi薄膜1bを形成してなる第一のシート1と、厚さ16μmのPETフィルム2aに下記表9に示す厚さのNi薄膜2bを形成してなる第二のシート2とを、Ni薄膜1b,2bを内側にして、実施例1と同じ導電性接着剤を用いて接着し、比較例6の近傍界ノイズ抑制シートの試験片TPを作製した。各試験片TPの表面抵抗を図5(a) 及び図5(b) に示す方法により測定した。結果を表9に示す。
Claims (6)
- 一方の面に金属薄膜が形成された一対のプラスチックフィルムを前記金属薄膜を内側にして導電性接着剤で接着してなり、各金属薄膜は磁性金属からなり、かつ接着された一対の金属薄膜の表面抵抗が20~150Ω/□となるように各金属薄膜の膜厚が調整されていることを特徴とする近傍界ノイズ抑制シート。
- 請求項1に記載の近傍界ノイズ抑制シートにおいて、前記磁性金属がNi,Fe,Co又はその合金であることを特徴とする近傍界ノイズ抑制シート。
- 請求項1又は2のいずれかに記載の近傍界ノイズ抑制シートにおいて、前記金属薄膜がNiからなることを特徴とする近傍界ノイズ抑制シート。
- 請求項1~3のいずれかに記載の近傍界ノイズ抑制シートにおいて、両金属薄膜の膜厚が10~30 nmの範囲内にあることを特徴とする近傍界ノイズ抑制シート。
- 請求項1~4のいずれかに記載の近傍界ノイズ抑制シートにおいて、接着された一対の金属薄膜の表面抵抗が30~80Ω/□であることを特徴とする近傍界ノイズ抑制シート。
- 請求項1~5のいずれかに記載の近傍界ノイズ抑制シートにおいて、前記金属薄膜が真空蒸着法により形成されたものであることを特徴とする近傍界ノイズ抑制シート。
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- 2011-11-14 CN CN201180068505.6A patent/CN103392389B/zh active Active
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Also Published As
Publication number | Publication date |
---|---|
JP2012178476A (ja) | 2012-09-13 |
TWI566680B (zh) | 2017-01-11 |
EP2680683A1 (en) | 2014-01-01 |
US8952273B2 (en) | 2015-02-10 |
KR101903540B1 (ko) | 2018-10-04 |
CN103392389B (zh) | 2018-04-06 |
EP2680683A4 (en) | 2014-12-10 |
CN103392389A (zh) | 2013-11-13 |
TW201240594A (en) | 2012-10-01 |
US20130284511A1 (en) | 2013-10-31 |
JP5582539B2 (ja) | 2014-09-03 |
KR20140009367A (ko) | 2014-01-22 |
EP2680683B1 (en) | 2016-02-03 |
BR112013019978A2 (pt) | 2017-10-24 |
RU2013143290A (ru) | 2015-03-27 |
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