WO2012106971A1 - 一种外腔激光器 - Google Patents

一种外腔激光器 Download PDF

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Publication number
WO2012106971A1
WO2012106971A1 PCT/CN2011/084229 CN2011084229W WO2012106971A1 WO 2012106971 A1 WO2012106971 A1 WO 2012106971A1 CN 2011084229 W CN2011084229 W CN 2011084229W WO 2012106971 A1 WO2012106971 A1 WO 2012106971A1
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Prior art keywords
light
beam splitter
grating
external cavity
lens
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PCT/CN2011/084229
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English (en)
French (fr)
Inventor
高磊
陈波
张光勇
张需明
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Huawei Technologies Co Ltd
Hong Kong Polytechnic University HKPU
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Huawei Technologies Co Ltd
Hong Kong Polytechnic University HKPU
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Priority to CN201180004614.1A priority Critical patent/CN103004039B/zh
Priority to PCT/CN2011/084229 priority patent/WO2012106971A1/zh
Publication of WO2012106971A1 publication Critical patent/WO2012106971A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission

Definitions

  • the present invention relates to the field of network transmission, and in particular to an external cavity laser. Background technique
  • the prior art provides a laser having a structure of a Littrow structure, as shown in Fig. 1, including a gain chip, a collimating lens, and a rotatable grating. After the beam exiting the gain chip is collimated by the collimating lens, it is diffracted at the rotatable grating, and the diffracted beam is collimated by the collimating lens to reach different positions on the end face of the gain chip.
  • the tunable laser of the structure shown in Figure 1 can realize wavelength tuning.
  • the wavelength tuning process is as follows: Due to the different diffraction angles of different wavelengths, the rotating grating can be rotated to make a certain wavelength of light diffracted by the rotatable grating.
  • the collimating lens is collimated and returned to the gain chip to produce a laser of this wavelength. .
  • the laser of the structure shown in Fig. 1 has the following disadvantages: Since the light is emitted from the gain chip to the end face of the returning chip, only one diffraction occurs at the grating, resulting in a low dispersion rate and side mode suppression of the output laser. It is relatively low and is prone to mode hopping. Summary of the invention
  • the technical solution of the present invention provides an external cavity laser having a higher dispersion ratio and a high side mode suppression ratio.
  • An aspect of the present invention provides an external cavity laser including: a gain chip, a lens, a polarization beam splitter, a quarter wave plate, a mirror, and a grating;
  • the gain chip is configured to generate multi-longitudinal mode light and output it to the lens; and is further configured to receive light input by the lens, amplify the light input by the lens, and output the light;
  • the lens for collimating light input by the gain chip and outputting the collimated light to the polarization beam splitter; and for receiving light input by the polarization beam splitter, Outputting the light input by the polarization beam splitter to the gain chip;
  • the polarizing beam splitter, the quarter-wave plate, and the grating are sequentially located in a propagation direction of the collimated light output by the lens;
  • the polarizing beam splitter is configured to transmit the P-polarized light received thereby, and reflect the received S-polarized light;
  • the grating is configured to receive light emitted from the quarter wave plate and to emit at least a portion of the received light back to the quarter wave plate;
  • the mirror for receiving light reflected by the polarization beam splitter of the S-polarized light emitted by the quarter-wave plate and reflecting at least a portion of the received light thereof back to the Polarization beam splitter.
  • the light emitted from the gain chip successively passes through the lens, the quarter wave plate and the polarization beam splitter, and then undergoes secondary diffraction at the grating, and the diffracted light successively passes through the quarter.
  • the reflected light is diffracted at the grating after passing through the polarizing beam splitter and the quarter wave plate.
  • the diffracted light passes through the quarter wave one after another.
  • the chip, the polarizing beam splitter and the lens reach the end face of the gain chip.
  • the external cavity laser provided by the solution of the present invention the light exits from the gain chip to the return gain chip, and undergoes two diffractions. Therefore, the external cavity laser provided by the technical solution of the present invention has a higher The dispersion rate of the output laser is relatively high, and it is not easy to jump.
  • FIG. 1 is a schematic structural view of a tunable laser in the prior art
  • FIG. 2 is a schematic structural view of an external cavity laser provided by the present invention. detailed description
  • An embodiment of the present invention provides an external cavity laser having a structure as shown in FIG. 2, including: a gain chip 12, a lens 11, a polarization beam splitter 15, a quarter wave plate 16, a mirror 17 and a grating 18.
  • the gain chip 12 generates a plurality of longitudinal mode lights and outputs them to the lens 11, which collimates the light input from the gain chip 12, and outputs the collimated light to the polarization beam splitter 15.
  • the polarization beam splitter 15, the quarter wave plate 16 and the grating 18 are sequentially located in the propagation direction of the collimated light.
  • the light of different longitudinal modes corresponds to different wavelengths
  • the aforementioned multi-longitudinal mode light is light containing a plurality of wavelength components.
  • the multi-longitudinal mode light generated by the gain chip 12 is P-polarized (the polarization direction of the multi-longitudinal mode light in Fig. 2), and the lens 11 collimates the multi-longitudinal mode light, and outputs it to the polarization beam splitter 15. Since the polarization beam splitter has a characteristic of transmitting the input P-polarized light and reflecting the input S-polarized light, the polarization beam splitter 15 transmits the light input by the lens 11 to the quarter-wave plate 16.
  • the light transmitted to the quarter-wave plate 16 passes through the quarter-wave plate 16 and exits onto the grating 18, where diffraction occurs at the grating 18. At least a portion of the light exiting from the quarter-wave plate 16 into the grating 18 is diffracted back to the quarter-wave plate 16, and after passing through the quarter-wave plate 16, is input to the polarization beam splitter 15. It should be noted that the portion of the light input from the quarter-wave plate 16 to the polarization beam splitter 15 has become S-polarized light.
  • the polarization beam splitter 15 reflects the light input from the quarter wave plate 16 to the mirror 17, and the mirror 17 vertically reflects at least a portion of the light it receives back to the polarization beam splitter 15. It should be noted that, in addition to the portion of the light that is reflected back vertically to the polarizing beam splitter 15, a portion of the light is reflected back to the polarizing beam splitter 15 in a non-perpendicular manner.
  • the light reflected by the mirror 17 back to the polarization beam splitter 15 is again reflected by the polarization beam splitter 15 to be transmitted to the quarter-wave plate 16 through the quarter-wave plate 16 because it is still S-polarized light. After that, diffraction occurs on the grating 18. After the diffraction, part of the light returns from the grating to the quarter wave plate 16, and after passing through the quarter wave plate, it is input to the polarization beam splitter 15. It should be noted that this time is input by the quarter wave plate 16 The light to the polarization beam splitter 15 is already P-polarized light.
  • the polarization beam splitter 15 transmits the light input from the quarter wave plate 16 to the lens 11, and the lens 11 outputs the light input from the polarization beam splitter 15 to the gain chip 12.
  • the gain chip 11 amplifies the light received by the lens 11 and outputs it. 13 in Fig. 2 indicates the output of the exceptional cavity laser of the present invention.
  • the mirror 17 is passed through the polarization beam splitter 15, the quarter wave plate 16, the grating 18, the quarter wave plate 16, and the polarization beam splitter 15 in succession.
  • the optical path is reversible, only the light vertically reflected by the mirror 17 can be returned to the gain chip 12 in accordance with its optical path from the gain chip 12 to the mirror 17, and is reflected by the mirror 17 in a non-vertical reflection manner to the polarization beam splitter.
  • the light of 15 cannot be returned to the gain chip 12 in accordance with its optical path from the gain chip 12 to the mirror 17.
  • Some of the light reflected by the mirror 17 in the non-perpendicular reflection manner to the polarization beam splitter 15 cannot reach the gain chip 12 due to diffraction at the grating, and a part of the light can reach the gain chip, but the position of the gain chip is not The effective receiving position of the gain chip.
  • the external cavity laser provided by the embodiment of the present invention light exits from the gain chip to return to the gain chip, and undergoes two diffractions, and the two diffractions enable the predetermined wavelength of light energy. Finally, the return to the gain chip is amplified to form a laser output, so that the light of the non-predetermined wavelength cannot be returned to the gain chip. Therefore, the external cavity laser provided by the embodiment of the present invention has a higher dispersion rate, and the side mode of the output laser. The suppression is relatively high and it is not easy to jump.
  • the mirror 17 can be specifically a rotatable mirror.
  • the rotatable mirror is selected to vertically reflect the light of the predetermined longitudinal mode of the light it receives back into the polarizing beam splitter 15 by rotation.
  • the external cavity laser can output laser light of different wavelengths by the rotation of the rotatable mirror, that is, the external cavity laser in this embodiment is a tunable external cavity laser.
  • the rotatable mirror rotation can be driven by any of the following driving methods: MEMS (Micro-Electro-Mechanical Systems) drive, piezoelectric drive, electrostatic drive, thermoelectric drive, motor drive . It will be appreciated that the manner in which the rotatable mirror is driven to rotate is not limited to the manners mentioned above.
  • the mirror 17 is plated with an anti-reflection film to increase the reflectivity, thereby reducing the loss of light energy.
  • the grating 18 is specifically an Echelle grating.
  • the use of the Echelle grating has two major advantages: 1.
  • the dispersion ratio can be further increased, so that the external cavity laser provided by the embodiment of the present invention can output a laser with a higher side mode suppression ratio; 2.
  • the step surface of the Echelle grating can be perpendicular to the lens.
  • the output direction of the collimated light of the output 11 is mounted such that the mounting of the grating 18 becomes very simple.
  • the grating 18 is specifically a rotatable grating.
  • the rotatable grating The rotation of the predetermined longitudinal mode can also be vertically reflected at the mirror 17 by rotation, so that the external cavity laser can also output laser light of different wavelengths.
  • the rotatable grating rotation can be driven by any of the following driving methods: MEMS drive, piezoelectric drive, electrostatic drive, thermoelectric drive, motor drive. It will be appreciated that the manner in which the rotatable grating is driven to rotate is not limited to the manners mentioned above.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Microscoopes, Condenser (AREA)
  • Semiconductor Lasers (AREA)
  • Polarising Elements (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Description

一种外腔激光器
技术领域
本发明涉及网络传输领域， 尤其涉及一种外腔激光器。 背景技术
近年来， 随着密集波分复用系统的发展， 以及光网络动态化和相干光传输 技术的应用， 具有窄线宽、 输出稳定单模激光、 高边模抑制比的激光器成为了 高速、 长距离的全光网络通信和相干通信的首选光源。
现有技术提供一种激光器， 其结构为利特罗结构， 如图 1所示， 包括增益 芯片、 准直透镜和可旋转光栅。 增益芯片出射的光束经过准直透镜的准直后， 在可旋转光栅处发生衍射，衍射光束经准直透镜的准直后到达增益芯片端面的 不同位置。 图 1所示结构的可调激光器可以实现波长调谐， 其波长调谐的过程 为： 由于不同波长的衍射角不同， 从而可以通过旋转可旋转光栅， 可以使得某 个波长的光经可旋转光栅衍射和准直透镜准直后返回到增益芯片中，从而产生 该波长的激光。 。
但是， 图 1所示结构的激光器具有如下缺点： 因光由增益芯片出射后到返 回增益芯片端面的过程中， 在光栅处只发生一次衍射， 导致色散率较低， 输出 的激光的边模抑制比较低， 容易发生跳模。 发明内容
鉴于现有技术中激光器存在的缺点，本发明技术方案提供一种具有较高色 散率、 高边模抑制比的外腔激光器。
本发明的一方面提供一种外腔激光器， 包括： 增益芯片、 透镜、 偏振分束 器、 四分之一波片、 反射镜和光栅；
所述增益芯片， 用于产生多纵模光并将其输出到所述透镜； 还用于接收由 述透镜输入的光， 将所述由所述透镜输入的光进行放大后输出；
所述透镜， 用于对由所述增益芯片输入的光进行准直， 并将准直后的光输 出到所述偏振分束器； 还用于接收由所述偏振分束器输入的光，将所述由偏振 分束器输入的光输出到所述增益芯片； 所述偏振分束器、所述四分之一波片和所述光栅依次位于所述透镜输出的 所述准直后的光的传播方向上；
所述偏振分束器，用于将其接收到的 P偏振的光进行透射，将其接收到的 S 偏振的光进行反射；
所述光栅， 用于接收从所述四分之一波片出射的光， 并将接收到的光的至 少一部分^ ~射回所述四分之一波片；
所述反射镜， 用于接收由所述四分之一波片出射的 S偏振的光经所述偏振 分束器反射后的光，并将其接收到的光的至少一部分垂直反射回所述偏振分束 器。
在本发明技术方案提供的外腔激光器中，从增益芯片出射的光相继经过透 镜、 四分之一波片和偏振分束器后在光栅处发生次衍射，衍射后的光相继经过 四分之一波片和偏振分束器后到达反射镜，反射后的光相继经过偏振分束器和 四分之一波片后在光栅处发生衍射， 该次衍射后的光相继经过四分之一波片、 偏振分束器和透镜后到达增益芯片的端面。从上可以看出，在本发明方案提供 的外腔激光器中， 光从增益芯片出射到返回增益芯片的过程中，会经历两次衍 射， 因此， 本发明技术方案提供的外腔激光器具有较高的色散率， 输出的激光 的边模抑制比较高， 不易跳模。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施 例或现有技术描述中所需要使用的附图作筒单地介绍，显而易见地， 下面描述 中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付 出创造性劳动的前提下， 还可以根据这些附图获得其他的附图。
图 1为现有技术中可调激光器的结构示意图；
图 2为本发明提供的外腔激光器的结构示意图。 具体实施方式
为了便于本领域一般技术人员理解和实现本发明，现结合附图描绘本发明 的实施例。 在此， 本发明的示意性实施例及其说明用于解释本发明， 但并不作 为对本发明的限定。 下面结合附图和实施例， 对本发明的技术方案进行描述。
本发明实施例提供一种外腔激光器， 其结构如图 2所示， 包括： 增益芯片 12、 透镜 11 , 偏振分束器 15, 四分之一波片 16, 反射镜 17和光栅 18。
增益芯片 12产生多纵模光并将其输出到透镜 11 , 透镜 11对由增益芯片 12 输入的光进行准直， 并将准直后的光输出到偏振分束器 15。 其中， 偏振分束器 15、 四分之一波片 16和光栅 18依次位于上述准直后的光的传播方向上。 需要说 明的是， 不同纵模的光对应不同的波长， 前面提到的多纵模光即是包含有多个 波长成分的光。
增益芯片 12产生的多纵模光是 P偏振（图 2中的 14示意多纵模光的偏振方向 ) 的光， 透镜 11将该多纵模光准直后， 输出到偏振分束器 15。 由于偏振分束器具 有将输入的 P偏振的光透射， 将输入的 S偏振的光反射的特性， 因此， 偏振分束 器 15会将由透镜 11输入的光透射到四分之一波片 16.
透射到四分之一波片 16的光经过四分之一波片 16后出射到光栅 18上，在光 栅 18处发生衍射。从四分之一波片 16出射到光栅 18中的光中至少有一部分被衍 射回四分之一波片 16, 经过四分之一波片 16后输入到偏振分束器 15。 需要说明 的是， 由该四分之一波片 16输入到偏振分束器 15的这部分光已经变成了 S偏振 的光了。
偏振分束器 15将由四分之一波片 16输入的光反射输出到反射镜 17,反射镜 17将其接收到的光的至少的一部分垂直反射回所述偏振分束器 15。需要说明的 是， 除了被垂直反射回偏振分束器 15的这部分光，还有部分光以非垂直反射的 方式被反射回偏振分束器 15。
由反射镜 17反射回偏振分束器 15的光， 由于其依然是 S偏振的光， 故被偏 振分束器 15再次反射输出到四分之一波片 16, 经过四分之一波片 16后，在光栅 18上发生衍射。衍射后有部分光从光栅处返回到四分之一波片 16, 经过四分之 一波片后输入到偏振分束器 15, 需要说明的是， 此次由四分之一波片 16输入到 偏振分束器 15的光已经是 P偏振的光了。
偏振分束器 15将由四分之一波片 16输入的光透射到透镜 11 ,透镜 11将由偏 振分束器 15输入的光输出到增益芯片 12。 增益芯片 11将其接收到的由透镜 11 输入的光进行放大后输出。 图 2中的 13表示本发明实施例外腔激光器的输出。
由于光到达光栅后发生衍射，而且不同波长的光对应的衍射角不同，因此， 在本发明实施例中 ,由四分之一波片 16输入到光栅 18中的光中可能只有部分能 被衍射回四分之一波片 16,故从增益芯片 12出射的光中至少有一部分会相继经 过偏振分束器 15、 四分之一波片 16、 光栅 18、 四分之一波片 16和偏振分束器 15 后到达反射镜 17。 由于光路可逆， 只有被反射镜 17垂直反射的光才能按照其从 增益芯片 12到达反射镜 17的光路重新回到增益芯片 12中，而被反射镜 17以非垂 直反射方式反射到偏振分束器 15的光则无法按照其从增益芯片 12到达反射镜 17的光路重新回到增益芯片 12中。被反射镜 17以非垂直反射方式反射到偏振分 束器 15的光中有一部分因在光栅处发生衍射而无法到达增益芯片 12,还有一部 分虽能到达增益芯片， 但到达增益芯片的位置不是增益芯片有效的接收位置。
从上述描述可以看出，在本发明实施例提供的外腔激光器中， 光从增益芯 片出射到回到增益芯片的过程中，会经历两次衍射， 而两次衍射能使得预定波 长的光能最终返回到增益芯片中被被放大后形成激光输出，使得非预定波长的 光无法返回增益芯片中， 因此， 本发明实施例提供的外腔激光器具有较高的色 散率， 输出的激光的边模抑制比较高， 不易跳模。
在另一实施例中，反射镜 17具体可以是可旋转反射镜。可旋转反射镜通过 旋转可以选择将其接收到的光中的预定纵模的光垂直反射回偏振分束器 15中。 在本实施例中，通过可旋转反射镜的旋转， 外腔激光器可以输出不同波长的激 光， 即本实施例中的外腔激光器是可调谐外腔激光器。 在又一实施例中， 可以 通过以下任意一种驱动方式来驱动可旋转反射镜旋转： MEMS ( Micro-Electro-Mechanical Systems, 敖机电系统）驱动、 压电驱动、 静电驱 动、 热电驱动、 马达驱动。 可以理解的是， 驱动可旋转反射镜旋转的方式并不 仅限于上述提到的方式。
在另一实施例中， 反射镜 17镀有增反膜， 以提高反射率， 从而减少光能量 的损失。
在另一实施例中， 光栅 18具体为 Echelle (中 P介梯 )光栅。 采用 Echelle光栅 具有两大好处： 一、 能进一步增大色散率， 从而使得本发明实施例提供的外腔 激光器能输出更高边模抑制比的激光； 二、 Echelle光栅的台阶面可以垂直于透 镜 11输出的所述准直后的光的传播方向安装，从而使得光栅 18的安装变得非常 筒单。
在另一实施例中， 光栅 18具体为可旋转光栅。 在本实施例中， 可旋转光栅 通过旋转也能使得预定纵模的光在反射镜 17处垂直反射，从而也能使得外腔激 光器输出不同波长的激光。可以通过以下任意一种驱动方式来驱动可旋转光栅 旋转： MEMS驱动、 压电驱动、 静电驱动、 热电驱动、 马达驱动。 可以理解的 是， 驱动可旋转光栅旋转的方式并不仅限于上述提到的方式。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局 限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易 想到的变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护 范围应该以权利要求书的保护范围为准。

Claims

权利要求
1、 一种外腔激光器， 其特征在于， 包括： 增益芯片、透镜、偏振分束器、 四分之一波片、 反射镜和光栅；
所述增益芯片， 用于产生多纵模光并将其输出到所述透镜； 还用于接收由 述透镜输入的光， 将所述由所述透镜输入的光进行放大后输出；
所述透镜， 用于对由所述增益芯片输入的光进行准直， 并将准直后的光输 出到所述偏振分束器； 还用于接收由所述偏振分束器输入的光，将所述由偏振 分束器输入的光输出到所述增益芯片；
所述偏振分束器、所述四分之一波片和所述光栅依次位于所述透镜输出的 所述准直后的光的传播方向上；
所述偏振分束器，用于将其接收到的 P偏振的光进行透射，将其接收到的 S 偏振的光进行反射；
所述光栅， 用于接收从所述四分之一波片出射的光， 并将接收到的光的至 少一部分^ "射回所述四分之一波片；
所述反射镜， 用于接收由所述四分之一波片出射的 S偏振的光经所述偏振 分束器反射后的光，并将其接收到的光的至少一部分垂直反射回所述偏振分束 器。
2、 如权利要求 1所述的外腔激光器， 其特征在于， 所述反射镜具体是可旋 转反射镜，通过旋转将其接收到的光中的预定纵模的光垂直反射回所述偏振分 束器。
3、 如权利要求 2所述的外腔激光器， 其特征在于， 所述可旋转反射镜的旋 转驱动方式为 机电系统驱动、 压电驱动、 静电驱动、 热电驱动和马达驱动中 的任意一种。
4、 如权利要求 1到 3任一项所述的外腔激光器， 其特征在于， 所述反射镜 的反射面上镀有增反膜。
5、 如权利要求 1到 4任一项所述的外腔激光器， 其特征在于， 所述光栅具 体为中阶梯光栅。
6、 如权利要求 5所述的外腔激光器， 其特征在于， 所述中阶梯光栅的台阶 面垂直于所述准直后的光的传播方向。
7、 如权利要求 1到 6任一项所述的外腔激光器， 其特征在于， 所述光栅具 体为可旋转光栅。
8、 如权利要求 7所述的外腔激光器， 其特征在于， 所述可旋转光栅的旋转 驱动方式为微机电系统驱动、 压电驱动、 静电驱动、 热电驱动和马达驱动中的 任意一种。
PCT/CN2011/084229 2011-12-19 2011-12-19 一种外腔激光器 Ceased WO2012106971A1 (zh)

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