WO2012096847A2

WO2012096847A2 - Apparatus for euv imaging and methods of using same

Info

Publication number: WO2012096847A2
Application number: PCT/US2012/020504
Authority: WO
Inventors: Daniel C. Wack; Damon F. Kvamme; John R. Rogers; James P. Mcguire, Jr.; John M. Rodgers
Original assignee: Kla-Tencor Corporation
Priority date: 2011-01-11
Filing date: 2012-01-06
Publication date: 2012-07-19
Also published as: US20130083321A1; JP2014507798A; KR20140042781A; EP2663897A2; US8842272B2; KR20180028072A; WO2012096847A3; JP6324071B2; EP2663897A4; KR102013083B1

Abstract

One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

Description

APPARATUS FOR EUV IMAGING AND METHODS OF USING

SAME

Inventors:

Daniel C. Wack; Damon F. Kvamme; John R. Rogers; James P. McGuire, Jr.;

and John M. Rodgers.

CROSS-REFERENCE TO RELATED APPLICATION(S)

The present application claims the benefit of U.S. provisional patent application number 61/431,768, entitled "Apparatus for EUV Imaging and Methods of Using Same," filed January 11 , 2011 , the disclosure of which is hereby incorporated by reference.

BACKGROUND OF THE INVENTION

TECHNICAL FIELD

The present disclosure relates to optical apparatus and methods of using same.

DESCRIPTION OF THE BACKGROUND ART

The conventional apparatus in the market for photomask inspection generally employ ultra-violet (UV) light with wavelengths at or above 193 nanometers (nm). This is suitable for masks designed for use in lithography based on 193nm light. To improve further the printing of minimum feature sizes, next generation lithographic equipment is now designed for operation in the neighborhood of 13.5nm. Accordingly, patterned masks designed for operation near 13nm must be inspected. Such masks are reflective, having a patterned absorber layer over a resonantly-reflecting substrate (EUV multilayer, typically 40 pairs of MoSi with a 7nm period. The conventional inspection apparatus uses optics with a combination of wavelength and numerical apertures (NA) that are not sufficient (i.e. too small) to resolve pattern features and pattern defects of interest (printable) in EUV mask patterns characterized by a half-pitch below 22 nanometers (nm).

SUMMARY

One embodiment disclosed relates to an apparatus for inspecting a photomask using extreme ultra-violet (EUV) light. The apparatus includes an illumination source for generating the EUV light which illuminates a target substrate, objective optics for receiving and projecting the EUV light which is reflected from the target substrate, and a sensor for detecting the EUV light which is projected by the objective optics. The objective optics includes a first mirror which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

Other embodiments, aspects and features are also disclosed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a reflective imaging apparatus in accordance with an embodiment of the invention.

FIG. 2 is an optical ray diagram of a mirror distribution for reflective objective optics in accordance with a first embodiment of the invention.

FIG. 3 is an optical ray diagram of a mirror distribution for reflective objective optics in accordance with a second embodiment of the invention.

FIG. 4 is an optical ray diagram of a mirror distribution for reflective objective optics in accordance with a third embodiment of the invention.

DETAILED DESCRIPTION EUV microscope objectives (having 2 to 4 multilayer-coated mirrors) disclosed previously, designed for defect or pattern review applications, with operation in the neighborhood of 13nm wavelength of light, are based have NA in the range 0.05 - 0.12, and an object field extent just adequate to the review (microscopy) task - in the range of 5-20 microns at the mask.

According to rigorous analyses of the defect detection capability as a function of NA and defect size, the resolving power and defect detection sensitivity of EUV objectives with NA in this range are inadequate for production-worthy EUV mask inspection of masks with feature half-pitch (HP) below 18 nm or so, due to shortcomings in both NA and high-quality object field size.

Current mask inspection systems are based on UV and DUV laser sources of light, which are high brightness and relatively high power. Light sources with significant spectral brightness in the neighborhood of 13nm are based on pulsed plasmas, with temperatures in the range 20-50 eV. Due to poor conversion efficiency (conversion from input energy to in-band radiation), such plasma sources show limited brightness at 13-14 nm, and raising the brightness significantly can drive source cost (and thus inspection costs imposed on the mask during fabrication) to levels which impair the economic

attractiveness of EUV Lithography (EUVL).

High-throughput operation of mask inspection systems with low brightness plasma sources (discharge or laser produced) drives the need for large object field and detector array, to increase the rate of instantaneous image signal integration and conversion to digital representation.

Simultaneously, to discriminate defect signals from background image noise, the imaging optics must maximize the collection of light diffracted or scattered by patterning or multilayer defects residing on the EUV mask of interest. For most defects of interest, which diffract and scatter the incident light over a wide range of angles, increasing the NA of the objective will provide an increase in defect signals.

Multilayer-mirror based imaging systems have poor transmission of light, due to the limited reflectivity of multilayers at the design wavelengths near 13-14 nm. A single MoSi multilayer mirror shows peak spectral reflectivity near 13.5 nm in the range of 60-70%. After multiple reflections from near-normal incidence mirrors in typical illumination and imaging optics in an EUV system, system transmission can fall below 1 %.

To perform the inspection task adequately, the light reaching the image plane and converted to digital signals by the detector array, from each resolved region of the mask, must reach a certain number of primary (13nm) quanta, and so a certain minimum signal-to-noise ratio, which in well designed systems is a strong function of the number of primary quanta (photons absorbed in the detector material, typically silicon). To compensate for losses in the optical system while keeping the light incident on the detector constant, the source brightness must be increased, which is difficult to develop and expensive to produce using currently known source technologies.

Alternatively, the range of angles emitted by the source which are transferred to the mask by the illumination optics can be increased, since the amount of light will increase with this angular range, at least within a range of angles supported by the source brightness. In other words, the illumination pupil size can be increased until a physical constraint intervenes. Rigorous studies of defect SNR in inspection optic designs have indicated that for EUV masks, such largely incoherent imaging often provides higher SNR than lower sigma, more coherent operation of the design and system, when used with plasma sources of limited brightness.

The use of beam splitters in reflective imaging systems used in conjunction with reflective objects (such as EUV mask inspection using EUV light) can simplify optical design and layout, by allowing interpenetration or overlap of illumination and imaging pupils in angle space. Current EUV beam splitter technology have low reflection and transmission coefficients ( 25-35 %). Inspection systems with beamsplitters must increase source brightness greatly to compensate for the loss of light reaching the detector. Inspection optics without a beamsplitter element is thus strongly preferred.

Light at wavelengths within the spectral bandpass of the resonantly-reflecting multilayer incident on such a uniform (unpatterned) mirror is reflected at 60-70% only if the angle of incidence resides within the angular bandpass as well. Periodic MoSi multilayers have an angular bandpass of 20- 25 degrees at 13.5nm. Light incident outside of the angular bandpass is reflected by the multilayer at very low levels, and thus is largely absorbed, or wasted.

Rigorous studies of light propagation and diffraction by patterns on EUV masks indicates that this trend holds for light incident on patterned masks, as well. Furthermore, the angular distribution of light diffracted and scattered by defects present on or in the EUV patterned mask is also modulated by the angular bandpass of the multilayer. The angular distribution of light scattered by a defect depends as well on the defect geometry, and the geometry of the local pattern, and can be significantly skewed to one side of the imaging pupil or another. To collect adequate light from all defect types and for arbitrary pattern geometries, the size of the imaging pupil should be maximized. Consequently, design of inspection optics without a beamsplitter and which operate largely within the finite angular bandwidth of the mask, and which utilize plasma sources of limited brightness, must contend with competing angular claims of the illumination and imaging pupils, each of which seek to maximize the size of their angular extent.

EUVL at 11 HP may use aperiodic multilayers in the EUV mask design, which provide increased angular bandwidth, and enable EUVL imaging at higher NAs than possible with a conventional periodic multilayer design. This improves, but does not fully mitigate the issue of finite angular bandpass.

Although increasing the number of mirrors in an imaging design can provide design capability which enables simultaneous high NA and wide object field, this can lead to a prohibitive decrease in light reaching the detector. Thus, there is significant value in discovering designs which provide adequate inspection performance at minimum mirror count, which do not use a beam splitter, and which balance the competing needs of illuminating and imaging pupils sizes and locations, and thereby enable the production use of low brightness plasma-based EUV sources.

Furthermore, it is of strong economic interest to discover optical designs which provide adequate defect inspection performance for at least two technology nodes, for example 16HP and 11 HP. As the critical defect size which limits chip yield shrinks with technology node, the NA of the inspection system should be increased to compensate for the reduction in scattered light.

In summary, conventional apparatus that utilize UV light are clearly limited when applied to inspect extreme ultra-violet photomasks ("EUV masks"). The conventional apparatus are typically "non-actinic" in that they result in an image of the mask that does not represent what will be realized using EUV light during lithography. Rather, the resultant image of the mask lacks both resolution and contrast, such that the image is not very useful for pattern inspection and defect detection.

More recently, photomask inspectors that use EUV light for imaging ("EUV inspectors") are being developed. However, the current EUV inspectors also have limitations and drawbacks. First, the field sizes of the images are very small. This limitation results in a low throughput when the apparatus is used to inspect entire EUV masks for defects. Second, numerical apertures of the optics are low. This limitation results in a relatively lower resolution. Such lower resolution limits the practical use of the images for pattern inspection and defect detection.

The present patent application discloses reflective imaging apparatus that overcome the above-discussed problems with photomask inspectors.

During inspection of patterned masks, acquisition and subsequent signal processing of the signal corresponding to a localized defective pattern can be accomplished by comparing or differencing the digital images from a test region of a pattern and a reference region, whether acquired or synthesized from prior information. Such difference operation removes the pattern, leaving the defect as a perturbation of a quasi-uniform background signal.

Imaging pupils are often circularly symmetric, leading to symmetric point spread functions at the image plane. While such symmetry is often required in lithography, mask inspection via difference imaging does not require symmetric psf, and consequently the imaging pupil can afford to be asymmetric. In particular, obscuration of a portion of the imaging pupil can be tolerated, if defect signal collection is not compromised significantly. Additionally, the shape of the parent pupil need not be circular. For instance, square or rectangular shapes for the parent are possible, and even advantageous when considering the incremental gain of scattered defect light or signal through addition of pupil region.

Expressed as a fraction of pupil area, obscuration fractions less than 5 or 10% are preferred. Obscuration in 4-mirror designs is often created through the blocking or shadowing of light reflected or scattered from the mask by the second mirror, or M2. Minimizing the size of both reflecting surface and peripheral support of M2 will minimize obscuration.

The design of structural support for M2 must provide for sufficient rigidity, so that environmental disturbances or vibrations do not drive or lead to dynamic perturbations of M2 position and thus to degradation of image quality through blurring.

Since mirrors for EUV light must be coated with multilayers to reach adequate reflectivity, the range of incidence angles on any of the highly curved elements must be considered, and restricted within the limits of multilayer deposition process technology. When estimating the defect SNR of a particular objective and system design, the apodization or modulation of transmission of each light ray by local reflectivity variations at the point of reflection on each mirror induced by the multilayer deposition process must be considered.

In particular, the design process must balance obscuration, structural response and curvature factors in the geometry of the second mirror or M2, in order to secure the minimum viable defect SNR which enables fast and economic mask inspection.

The choice of chief ray in design of the objective for mask inspection must balance several competing factors. The chief ray is defined by the centroid of the angular distribution of light rays transmitted by the objective to the image plane; i.e., with due consideration of the pupil apodization caused by mirror coatings. Although conventional designs for reflective imaging without a beamsplitter place the plane dividing the illumination and collection light bundles on the optical axis and coincident with the object surface normal, inspection- oriented optics do not demand or strongly prefer this choice. Thus allowing placement of the lower marginal ray of the imaging pupil below the surface normal is found to be advantageous for defect signal collection.

Correspondingly, in the process of increasing defect SNR, as the NA is increased from low levels, in higher performance designs the imaging chief ray (relative to the surface normal) is below the numerical value of the NA.

Inspection-optimized EUV objective designs bias the imaging chief rays toward the surface normal to maximize overlap of imaging pupil with multi-layer modulated angular distribution of light scattered by pattern defects, while providing sufficient angular range (still largely restricted to the multilayer angular bandpass) to the illumination pupil to secure adequate photon flux from the limited brightness plasma EUV sources.

FIG. 1 is a schematic diagram of a reflective imaging apparatus in accordance with an embodiment of the invention. The apparatus 100 includes an EUV illumination source 102, an illumination mirror 104, a target substrate 106, a substrate holder 107, objective optics 108, a sensor (detector) 110, and a data processing system 112.

The EUV illumination source 102 may comprise, for example, a laser-induced plasma source which outputs an EUV light beam 122. In one embodiment, the EUV light is at a wavelength of 13.5 nm. The illumination mirror 104 reflects the EUV light such that the beam 124 illuminates the target substrate 106. In one embodiment of the invention, the target substrate 106 is an EUV mask being inspection. The target substrate 106 may be scanned under the beam 124 by controllably translating the substrate holder 107 so that the field of view of the imaging apparatus covers regions on the substrate to be inspected.

Patterned light 126 is reflected from the target substrate 106 to the reflective objective optics 108. Preferred embodiments of the objective optics 108 are described in detail below in relation to FIGS. 2, 3 and 4.

The objective optics 108 outputs a projection 128 of the patterned light onto the sensor 110. In one embodiment, the sensor 110 may be a time- delay integration detector array so that the data may be detected while the target substrate is being scanned (translated) under the beam 124. The data processing system 112 may include electronic circuitry, one or more microprocessors, data storage, memory and input and output devices. The data processing system 112 may be configured to receive and process data from the sensor 110. In accordance with one embodiment, the data processing system 112 may process and analyze the detected data for pattern inspection and defect detection.

FIG. 2 is an optical ray diagram of a mirror distribution for the objective optics 108 in accordance with a first embodiment of the invention. An optical prescription for the objective optics 108 in FIG. 2 is provided below in Appendix A.

In this embodiment, there are four mirrors (202, 204, 206, and 208) arranged as shown in FIG. 2. The mirrors are arranged such that the patterned light 126 reflects from the first, second, third, and fourth mirrors (202, 204, 206, and 208, respectively) in that order. In this arrangement, the first mirror 202 is concave, the second mirror 204 is concave, the third mirror 206 is convex, the fourth mirror 208 is concave. Hence, the mirrors are, in order: concave;

concave; convex; and concave.

In this embodiment, the second mirror 204 partially obscures the first mirror 202 from the patterned light 126. In other words, part of the area of the first mirror 202 is blocked by the second mirror 204 from receiving the light 126 reflected from the target substrate 106. Furthermore, an opening in the first mirror 202 is used to let the light reflected by the second mirror 204 pass through to reach the third mirror 206. Applicants have determined that, despite the first mirror 202 being partially obscured and needing a pass-through hole, a high numerical aperture is nevertheless achieved with this embodiment.

In accordance with a preferred embodiment, the numerical aperture for the objective optics is at least 0.2, and the field of view is at least 5,000 square microns in area. For this implementation of the objective optics 108, the numerical aperture has been determined to be 0.24, and the size of the field of view has been determined to be 327 microns by 30 microns (9,810 square microns in area). Advantageously, both the numerical aperture and field of view are relatively large in this embodiment. The working distance is the distance between the target substrate 106 and the nearest optical element (in this case, the second mirror 204). A working distance of at least 100 millimeters (mm) is desirable to provide sufficient space for illumination of the target substrate 106. In this embodiment, the working distance is 145 mm.

The total track may be defined as the distance from the target substrate 106 to the sensor 110. In this particular embodiment, the total trace is 1 ,500 mm.

FIG. 3 is an optical ray diagram of a mirror distribution for reflective objective optics in accordance with a second embodiment of the invention. An optical prescription for the objective optics 108 in FIG. 3 is provided below in Appendix B.

In this embodiment, there are four mirrors (302, 304, 306, and 308) arranged as shown in FIG. 3. The mirrors are arranged such that the patterned light 126 reflects from the first, second, third, and fourth mirrors (302, 304, 306, and 308, respectively) in that order. In this arrangement, the first mirror 302 is concave, the second mirror 304 is concave, the third mirror 306 is convex, the fourth mirror 308 is concave. Hence, the mirrors are, in order: concave; convex; concave; and convex.

In this embodiment, the second mirror 304 partially obscures the first mirror 302 from the patterned light 126. In other words, part of the area of the first mirror 302 is blocked by the second mirror 304 from receiving the light 126 reflected from the target substrate 106. Furthermore, an opening in the first mirror 302 is used to let the light reflected by the second mirror 304 pass through to reach the third mirror 306. Applicants have determined that, despite the first mirror 302 being partially obscured and needing a pass-through hole, a high numerical aperture is nevertheless achieved with this embodiment.

In accordance with a preferred embodiment, the numerical aperture for the objective optics is at least 0.2, and the field of view is at least 5,000 square microns in area. For this implementation of the objective optics 108, the numerical aperture has been determined to be 0.24, and the size of the field of view has been determined to be 440 microns by 420 microns (184,800 square microns in area). Advantageously, the numerical aperture is relatively large in this embodiment, and the field of view is particularly large. The large field of view advantageously enables multiple sensor columns.

The working distance is the distance between the target substrate 106 and the nearest optical element (in this case, the second mirror 304). A working distance of at least 100 millimeters (mm) is desirable to provide sufficient space for illumination of the target substrate 106. In this embodiment, the working distance is 237 mm.

The total track may be defined as the distance from the target substrate 106 to the sensor 110. In this particular embodiment, the total trace is 873 mm.

FIG. 4 is an optical ray diagram of a mirror distribution for reflective objective optics in accordance with a third embodiment of the invention. An optical prescription for the objective optics 108 in FIG. 4 is provided below in Appendix C.

In this embodiment, there are four mirrors (402, 404, 406, and 408) arranged as shown in FIG. 4. The mirrors are arranged such that the patterned light 126 reflects from the first, second, third, and fourth mirrors (402, 404, 406, and 408, respectively) in that order. In this arrangement, the first mirror 402 is concave, the second mirror 404 is convex, the third mirror 406 is concave, the fourth mirror 408 is concave. Hence, the mirrors are, in order: concave; convex; concave; and concave.

In this embodiment, the second mirror 404 partially obscures the first mirror 402 from the patterned light 126. In other words, part of the area of the first mirror 402 is blocked by the second mirror 404 from receiving the light 126 reflected from the target substrate 106. Furthermore, an opening in the first mirror 402 is used to let the light reflected by the second mirror 404 pass through to reach the third mirror 406. Applicants have determined that, despite the first mirror 402 being partially obscured and needing a pass-through hole, a high numerical aperture is nevertheless achieved with this embodiment.

In accordance with a preferred embodiment, the numerical aperture for the objective optics is at least 0.2, and the field of view is at least 5,000 square microns in area. For this implementation of the objective optics 108, the numerical aperture has been determined to be 0.24, and the size of the field of view has been determined to be 410 microns by 255 microns (104,550 square microns in area). Advantageously, the numerical aperture is relatively large in this embodiment, and the field of view is also large.

The working distance is the distance between the target substrate 106 and the nearest optical element (in this case, the second mirror 404). A working distance of at least 100 millimeters (mm) is desirable to provide sufficient space for illumination of the target substrate 106. In this embodiment, the working distance is 230 mm.

The total track may be defined as the distance from the target substrate 106 to the sensor 110. In this particular embodiment, the total trace is 1 ,420 mm.

In the above description, numerous specific details are given to provide a thorough understanding of embodiments of the invention. However, the above description of illustrated embodiments of the invention is not intended to be exhaustive or to limit the invention to the precise forms disclosed. One skilled in the relevant art will recognize that the invention can be practiced without one or more of the specific details, or with other methods, components, etc. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring aspects of the invention. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize.

These modifications can be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification and the claims. Rather, the scope of the invention is to be determined by the following claims, which are to be construed in accordance with established doctrines of claim interpretation. APPENDIX A

Optical Prescription for Objective Optics depicted in FIG. 2.

Form: PPNP (type K)

SURFACE DESCRIPTION THICKNESS APERTURE DESCRIPTION

ELT SUR RADIUS SHAPE OR DIMENSION SHAPE MATERIAL

NO. NO. SEPARATION

OBJECT INF FLT 171.5840

DECENTER ( 1)

-31.2583 114 258 CIR 157.5932 93.435 93.435 C-l

DECENTER ( 2)

15.2460 152.732 152.685 C-2

(STOP)

RETURN( 2)

1 2 -207.101 A-l -167.7470 167.526 166.181 C-3

REFL

2 3 25.266 A-2 87.7476 14.523 14.282 C-4 REFL

79.9994 13.380 CIR 223.0383 10.546 C-5 0.1102 5.454 CIR

3 4 21.112 A-3 -113.1924 5.712 0.899 C-6

4 5 439.339 A-4 1076.8791 64.605 6.679 C-7

REFL

FLT 293.920

NOTES - Positive radius indicates the center of curvature is to the right Negative radius indicates the center of curvature is to the left

- Dimensions are given in millimeters

- Thickness is axial distance to next surface

- Image diameter shown above is a paraxial value,

it is not a ray traced value

APERTURE DATA

DIAMETER DECENTER

APERTURE SHAPE Y X Y ROTATION

C- 1 CIRCLE 93.435 ELLIPS (OBSC) 14.282 14.523 0.000 -2.136

0.0

RECTANGLE (OBSC) 14.523 42.846 0.000 -23.559

0.0

C- 2 ELLIPS 152.732 152.685 0.000 -0.029

0.0

C- 3 ELLIPS 167.526 166.181 0.000 24.513

0.0

CIRCLE (OBSC) 10.546 10.546 0.000 -1.495

0.0

C- 4 ELLIPS 14.523 14.282 0.000 -2.136

0.0

C- 5 CIRCLE 10.546 10.546 0.000 -1.495

0.0

C- 6 RECTANGLE 5.712 0.899 0.000 -0.619

0.0

C- 7 RECTANGLE 64.605 6.679 0.000 -6.786

0.0

ASPHERIC CONSTANTS

2

(CURV)Y 4 6 8 10

Z = + (A) Y + (B)Y + (C)Y + (D) Y

2 2 1/2

1 + (1- (1+K) (CURV) Y )

12 14 16 18 20

+ (E)Y + (F)Y + (G) Y + (H) Y + <J)Y

ASPHERIC CURV K A B C

D

E F G H

J

A- 1 -0.00482857 -0.092398 4.73666E-10 1.00934E-14 1.65866E-19 6.57843E-24

O.OOOOOE+00 O.OOOOOE+00 O.OOOOOE+00 O.OOOOOE+00

O.OOOOOE+00

A- 2 0.03957902 0.557074 -7.96262E-06 -1.22560E-08 -3.24562E-11 1.31052E-13

-9.70137E-16 O.OOOOOE+00 O.OOOOOE+00 O.OOOOOE+00

O.OOOOOE+00

A- 3 0.04736557 -0.131506 -2.22840E-06 -9.90910E-09 2.45154E-10 O.OOOOOE+00

O.OOOOOE+00 O.OOOOOE+OO O.OOOOOE+00 O.OOOOOE+00

O.OOOOOE+00

A- 4 0.00227615 0.000000 -4.22762E-09 O.OOOOOE+00 O.OOOOOE+00 O.OOOOOE+00

O.OOOOOE+00 O.OOOOOE+00 O.OOOOOE+00 O.OOOOOE+00

O.OOOOOE+00

DECENTERING CONSTANTS

DECENTER X GAMMA D( 1) 0000 0.0377 0.0000 0.0000 0.0000000

D( 2) 0000 24.8300 0.0000 6.6732 0.0000 00 (RETU)

A decenter defines a new coordinate system (displaced and/or rotated) in which subsequent surfaces are defined. Surfaces following a decenter are aligned on the local mechanical axis (z-axis) of the new coordinate system. The new mechanical axis remains in use until changed by another decenter. The order in which displacements and tilts are applied on a given surface is specified using different decenter types and these generate different new coordinate systems; those used here are explained below. Alpha, beta, and gamma are in degrees.

DECENTERING CONSTANT KEY:

TYPE TRAILING CODE ORDER OF APPLICATION

DECENTER DISPLACE (Χ,Υ,Ζ)

TILT (ALPHA, BETA, GAMMA)

REFRACT AT SURFACE THICKNESS TO NEXT SURFACE

DECENTER & RETURN RETU DECENTER (X, Y, Z, ALPHA, BETA, GAMMA)

REFRACT AT SURFACE

RETURN (-GAMMA, -BETA, -ALPHA, -Z, -Y, THICKNESS TO NEXT SURFACE

REFERENCE WAVELENGTH 13.5 NM

This is a non-symmetric system. If elements with power are decentered or tilted, the first order properties are probably inadequate in describing the system characteristics.

INFINITE CONJUGATES X Y

EFL = -1 .5852 -1 .5852

BFL = -281 .8874 -281 .8874

FFL = -171 .5821 -171. .5821

F/NO = -0. .0107 -0. .0107

AT USED CONJUGATES

REDUCTION = -860. .5581 -860. ,5581

FINITE F/NO = - ^■1787. .6352 -1776. .3433

OBJECT DIST 171. .5840 171. .5840

TOTAL TRACK = 1500. .0000 1500. .0000

IMAGE DIST = 1076. .8791 1076. .8791

OAL = 251. .5370 251. .5370

PARAXIAL

IMAGE HT = 104. .2136 1. ,0040

IMAGE DIST = 1082. .2952 1082. 2952

SEMI-FIELD

ANGLE = 80. 1437 3. 1738

ENTR PUPIL

DIAMETER = 147. .8187 148. .7584

DISTANCE = 126. .3350 126. 3350

EXIT PUPIL

DIAMETER = 0. 7865 0. 7915

DISTANCE -281. 8958 -281. 8958

NOTES - FFL is measured from the first surface

- BFL is measured from the last surface PPNP CaseK 120110

ASPHERIC CONSTANTS

(CURV) Y 4 6 8 10

(A) Y + (B)Y + (C)Y + (D)Y

2 2 1/2

(1+K) (CURV) Y )

ASPHERIC CURV

A( 1) -0.00482857 -0.092398 0.473666E-09 0.100934E-13 0.165866E-187843E-23

CURVATURE OF BEST SPHERE -0.004794

RADIUS OF BEST SPHERE = -208.591

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000000

3 .857000 -0 .035919 -0 .035662 0 .000256

7 .714000 -0 .143708 -0 .142686 0 .001021

11 .571000 -0 .323465 -0 .321182 0 .002283

15 .428000 -0 .575355 -0 .571333 0 .004022

19. .285000 -0, .899608 -0, .893398 0 .006209

23, .142000 -1, .296523 -1, .287713 0, .008810

26, .999000 -1, .766468 -1. .754691 0, .011777

30. .856000 -2 , .309882 -2 , .294825 0, .015057

34. .713000 -2. , 927276 -2. .908692 0. .018584

38. .570000 -3. , 619238 -3. ,596954 0, .022284

42. .427000 -4. ,386433 -4. .360362 0. , 026070

46. ,284000 -5, ,229607 -5, .199764 0. .029843

50. .141000 -6. ,149595 -6. ,116105 0. .033490

53. , 998000 -7. ,147317 -7. , 110433 0, .036884

57. ,855000 -8. ,223792 -8. ,183911 0. .039881

61. ,712000 -9. ,380135 -9. ,337817 0. ,042318

65. 569000 -10. 617572 -10. ,573557 0. ,044015

69. 426000 -11. 937439 -11. 892674 0. ,044765

73. 283000 -13. 341195 -13. 296857 0. 044339

77. 140000 -14. 830431 -14. 787955 0. 042477

80. 997000 -16. 406878 -16. 367990 0. 038887

84. 854000 -18. 072418 -18. 039176 0. 033241

88. 711000 -19. 829100 -19. 803933 0. 025167

92. 568000 -21. 679156 -21. 664911 0. 014246

96. 425000 -23. 625013 -23. 625013 0. OOOOOO

PPNP CaseK 120110

ASPHERIC CONSTANTS

(CURV)Y 4 6 8 10

Z = + (A) Y + (B)Y + (C)Y + (D)Y

2 2 1/2

1 + (1- (1+K) (CURV) Y )

12 14 16 18 20

+ (E)Y + (F)Y + (G)Y + (H)Y + (J)Y ASPHERIC CURV

A( 2) 0.03957902 0.557074 -0.796262E-05 -0.122560E-07 -0.324562E-10 0.131052E-12

-0.970137E-15 O.OOOOOOE+OO O.OOOOOOE+00 O.OOOOOOE+OO

O.OOOOOOE+00

CURVATURE OF BEST SPHERE 0.039040

RADIUS OF BEST SPHERE = 25.615

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000000

0 .332000 0 .002181 0 .002152 -0 .000030

0 .664000 0 .008726 0, .008608 -0 .000118

0 .996000 0 .019636 0, .019371 -0 .000264

1 .328000 0 .034913 0 .034448 -0 .000465

1 .660000 0 .054563 0, .053846 -0 .000717

1. .992000 0, .078591 0, .077574 -0 .001017

2. .324000 0. .107003 0. , 105645 -0, .001358

2. .656000 0 .139807 0, .138073 -0, .001734

2. .988000 0, .177013 0. .174874 -0, .002138

3. .320000 0, .218630 0. .216068 -0, .002562

3. .652000 0, .264671 0. .261677 -0, .002994

3. .984000 0, .315148 0. ,311723 -0, .003425

4. ,316000 0, .370076 0. .366233 -0, , 003842

4. , 648000 0. .429470 0. ,425237 -0. ,004232

4. .980000 0, .493348 0. .488766 -0. .004581

5. ,312000 0. .561727 0. ,556855 -0. , 004873

5. , 644000 0. , 634629 0. ,629540 -0. .005089

5. 976000 0. ,712073 0. 706862 -0. ,005212

6. ,308000 0. .794084 0. ,788864 -o. ,005220

6. ,640000 0. ,880686 0. ,875593 -0. ,005092

6. 972000 0. ,971904 0. 967099 -0. 004805

7. ,304000 1. ,067767 1. ,063435 -0. ,004332

7. ,636000 1. ,168304 1. ,164658 -0. ,003646

7. 968000 1. ,273546 1. 270829 -0. ,002717

8. 300000 1. 383527 1. 382014 -0. 001513

8. 632000 1. ,498281 1. 498281 0. ,000000

PPNP CaseK 120110

ASPHERIC CONSTANTS

(CURV) Y 4 6 8 10

(A) Y + (B)Y + (C)Y + (D)Y

2 2 1/2

(1+K) (CURV) Y )

ASPHERIC CURV

A( 3) 0.04736557 -0.131506 -0.222840E-05 -0.990910E- 0.245154E-09 O.OOOOOOE+00

CURVATURE OF BEST SPHERE 0.047274

RADIUS OF BEST SPHERE = 21.153 ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000132

0 .109000 0 .000281 0 .000281 0 .000132

0 .218000 0 .001126 0 .001123 0 .000130

0 .327000 0 .002532 0 .002528 0 .000127

0 .436000 0 .004502 0 .004494 0 .000124

0 .545000 0 .007035 0 .007022 0 .000119

0 .654000 0 .010131 0 .010112 0 .000113

0 .763000 0 .013791 0 .013765 0 .000107

0 .872000 0 .018013 0 .017981 0 .000100

0. .981000 0. .022800 0 .022760 0 .000092

1. .090000 0. .028151 0 .028102 0 .000083

1. .199000 0, .034066 0. .034008 0. .000074

1. .308000 0, .040545 0. .040478 0. .000065

1. .417000 0. , 047590 0, .047514 0, .000056

1. ,526000 0. ,055200 0. .055115 0. .000047

1. .635000 0. ,063376 0. .063282 0. ,000038

1. 744000 0. 072118 0. ,072015 0. .000029

1. 853000 0. 081427 0. ,081316 0. ,000021

1. 962000 0. 091304 0. 091186 0. 000014

2. 071000 0. 101748 0. 101624 0. 000008

2. 180000 0. 112761 0. 112632 0. 000004

2. 289000 0. 124342 0. 124211 0. 000001

2. 398000 0. 136494 0. 136362 0. 000000

2. 507000 0. 149216 0. 149085 0. 000001

2. 616000 0. 162509 0. 162382 0. 000005

2. 725000 ^■ 0. 176374 0. 176254 0. 000012

PPNP CaseK 120110

ASPHERIC CONSTANTS

(CURV) Y 4 6 8

(A) Y + (B) Y + (C)Y + (D)

2 2 1/2

(1+K) (CURV) Y )

ASPHERIC CURV

A( 4) 0.00227615 0.000000 -0.422762E-08 O.OOOOOOE+OO O.OOOOOOE+00 O.OOOOOOE+00

CURVATURE OF BEST SPHERE 0.002267

RADIUS OF BEST SPHERE = 441.054

Y ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000000

1 .247000 0 .001770 0 .001763 -0 .000007

2, .494000 0 .007079 0 .007051 -0 .000027

3. .741000 0 .015927 0 .015866 -0 .000061

4, .988000 0, .028314 0 .028206 -0. .000108

6, .235000 0. .044239 0, .044073 -0. .000166

7, .482000 0. .063701 0. .063466 -0, .000235

8. .729000 0, .086700 0, .086387 -0, .000313

9. , 976000 0. .113234 0. .112836 -0. .000399

11. ,223000 0. .143303 0. .142812 -0. .000491

12. ,470000 0. .176905 0. .176318 -0. .000586

13. ,717000 0. .214038 0. ,213354 -0. .000684

14. ,964000 0. ,254701 0. ,253921 -0. .000780 , .211000 0, .298891 0.298019 -0, .000872, .458000 0. .346608 0 .345650 -0, .000958. ,705000 0, .397849 0, .396815 -0, .001033. .952000 0, .452611 0, .451516 -0. .001095. ,199000 0. .510891 0, .509753 -0. .001139. ,446000 0. .572689 0, .571528 -0. .001161. , 693000 0, .638000 0, .636842 -0. .001158. , 940000 0. ,706821 0, .705697 -0. .001124. 187000 0. ,779150 0. .778095 -0. ,001055. 434000 0. ,854983 0. , 854037 -0. 000946. 681000 0. 934317 0. , 933526 -0. 000792. 928000 1. 017149 1. .016562 -0. 000586. .175000 1. 103474 1. .103149 -0. 000325. 422000 1. 193288 1. .193288 0. 000000

APPENDIX B

Optical Prescription for Objective Optics depicted in FIG. 3.

Form: PNPN (type E)

SURFACE DESCRIPTION THICKNESS APERTURE DESCRIPTION

ELT SDR RADIUS SHAPE OR DIMENSION SHAPE MATERIAL

NO. NO. SEPARATION

OBJECT INF FLT 231.9676

130.9218 161.906 161.906 C-l

1 1 -202.870 A-l -125.7510 168.744 C-2 REFL (STOP)

2 2 -30.857 A-2 125.7510 20.585 20.683 C-3

REFL

483.2695 22.288 CIR 1.9055 11.572 CIR

3 3 -36.145 A-3 0.0000 7.765 5.068 C-4 REFL

DECENTER ( 1)

100.0000 291.037 CIR 4 2247.520 CC SPH 0.0000 142.734 89.218 C-5

REFL

DECENTER ( 2)

572.8054 382.502 CIR

IMAGE 615.460

- Dimensions are given in millimeters

- Thickness is axial distance to next surface

- Image diameter shown above is a paraxial value,

it is not a ray traced value

APERTURE DATA

DIAMETER DECENTER

APERTURE SHAPE Y X Y ROTATION

CIRCLE 161.906

ELLIPS (OBSC) 22.643 22.752 0.000 -3.554

0.0 RECTANGLE (OBSC) 20.585 76.760 0.000 34.826

0.0

C- 2 CIRCLE 168.744 168.744 0.000 -30.154

0.0

C- 3 ELLIPS 20.585 20.683 0.000 -3.554

0.0

C- 4 RECTANGLE 7.765 5.068 0.000 -2.531

0.0

C- 5 RECTANGLE 142.734 89.218 0.000 52.791

0.0

ASPHERIC CONSTANTS

2

(CURV)Y 4 6 8 10

Z = + (A) Y + (B)Y + (C)Y + (D) Y

2 2 1/2

1 + (1- (1+K) (CURV) Y )

ASPHERIC CURV

D

A- 1 -0.00492927 -0.180985 O.OOOOOE+00 -1.59047E-16 -3.25151E-21 1.95259E-25

A- 2 -0.03240743 -0.742876 O.OOOOOE+00 -8.96537E-11 -3.90040E-14 O.OOOOOE+00

A- 3 -0.02766624 -4.312119 -8.98165E-06 9.34802E-09 0.00000E+00 0.00000E+00

DECENTERING CONSTANTS

DECENTER X GAMMA

D( 1) 0000 0000 -485.1750 0000 0 . 0000 0000

D( 2) 0000 0000 385.1750 0000 0 . 0000 0000

A decenter defines a new coordinate system (displaced and/or rotated) in which subsequent surfaces are defined. Surfaces following a decenter are aligned on the local mechanical axis (z-axis) of the new coordinate system. The new mechanical axis remains in use until changed by another decenter. The order in which displacements and tilts are applied on a given surface is specified using different decenter types and these

generate different new coordinate systems; those used here are explained below. Alpha, beta, and gamma are in degrees.

DECENTERING CONSTANT KEY:

TYPE TRAILING CODE ORDER OF APPLICATION

DECENTER DISPLACE (Χ,Υ,Ζ)

TILT (ALPHA, BETA, GAMMA)

REFRACT AT SURFACE THICKNESS TO NEXT SURFACE REFERENCE WAVELENGTH = 13.5 NM

This is a non-symmetric system. If elements with power are

decentered or tilted, the first order properties are probably

inadequate in describing the system characteristics.

INFINITE CONJUGATES

EFL = -1.7535

BFL = -929.1867

FFL = -231.9655

F/NO = -0.0069

AT USED CONJUGATES

REDUCTION = -856.6454

FINITE F/NO = -1291.5539

OBJECT DIST = 231.9676

TOTAL TRACK = 1420.8698

IMAGE DIST = 572.8054

OAL = 616.0968

PARAXIAL

IMAGE HT = 252.7104

IMAGE DIST = 572.9594

SEMI-FIELD

ANGLE = 0.0466

ENTR PUPIL

DIAMETER = 255.1309

DISTANCE = 130.9218

EXIT PUPIL

DIAMETER = 1.2328

DISTANCE = -929.1951

NOTES - FFL is measured from the first surface

- BFL is measured from the last surface

schwarschild 4m857x n.len

ASPHERIC CONSTANTS

2

(CURV)Y 4 6 8 10

Z = + (A)Y + (B)Y + (C)Y + (D)Y

2 2 1/2

1 + (1-(1+K) (CURV) Y )

ASPHERIC CURV K A B C D

A( 1) -0.00492927 -0.180985 O.OOOOOOE+00 -0.159047E-15 -0.325151E-205259E-24

CURVATURE OF BEST SPHERE RADIUS OF BEST SPHERE =

PH SAG SPHERE SAG SAG DIFFERENCE

(Z) 0.000000 0.000000 0.000000 0.000000

4 .581000 -0 .051727 -0 .050870 0 .000857

9 .162000 -0 .206973 -0 .203555 0 .003419

13 .743000 -0 .465934 -0 .458281 0 .007652

18 .324000 -0 .828934 -0 .815429 0 .013505

22 .905000 -1 .296435 -1 .275533 0 .020903

27 .486000 -1 .869033 -1 .839288 0 .029745

32 .067000 -2, .547463 -2 .507555 0, .039908

36, .648000 -3, .332608 -3 .281366 0, .051242

41 .229000 -4 .225500 -4 .161933 0, .063567

45 .810000 -5, .227329 -5 .150658 0, .076672

50. .391000 -6, .339452 -6, .249144 0. .090308

54. .972000 -7, ,563402 -7, .459211 0. .104191

59. ,553000 -8. .900898 -8, .782910 0. .117988

64. ,134000 -10. ,353861 -10. .222542 0. ,131319

68. ,715000 -11. 924425 -11. ,780682 0. 143743

73. 296000 -13. 614959 -13. ,460201 0. 154758

77. 877000 -15. 428082 -15. ,264302 0. 163780

82. ,458000 -17. 366692 -17. .196550 0. 170142

87. 039000 -19. 433986 -19. ,260917 0. 173069

91. 620000 -21. 633496 -21. ,461829 0. 171667

96. 201000 -23. 969125 -23. 804228 0. 164897

100. 782000 -26. 445185 -26. 293636 0. 151549

105. 363000 -29. 066452 -28. 936245 0. 130207

109. 944000 -31. 838218 -31. 739010 0. 099208

114. 525000 -34. 766367 -34. 709782 0. 056584

119. 106000 -37. 857450 -37. 857450 0. 000000 schwarschild 4m857x n.len

ASPHERIC CONSTANTS

2

(CURV)Y 4 6 8 10

Z = + (A)Y + (B)Y + (C)Y + ( D) Y

2 2 1/2

1 + (1- (1+K) (CURV) Y )

ASPHERIC CURV K A B C D

A( 2) -0.03240743 -0.742876 O.OOOOOOE+OO -0.896537E-10 -0.390040E-13

O.OOOOOOE+OO

CURVATURE OF BEST SPHERE = -0.031374

RADIUS OF BEST SPHERE = -31.873

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0, .000000 0, .000000 0 .000000 -0 .022846

0. .518000 -0. .004348 -0 .004209 -0 .022707

1. , 036000 -0, , 017393 -0 .016841 -0, .022294

1. ,554000 -0. , 039137 -0, .037906 -0, .021614

2, .072000 -0, .069586 -0 .067419 -0 .020679

2 , .590000 -0, .108745 -0 .105405 -0 .019505

3. ,108000 -0. , 156625 -0 .151894 -0, .018115

3. , 626000 -0. ,213234 -0, .206924 -0, .016535

4. ,144000 -0. .278586 -0, .270538 -0. .014798

4. ,662000 -0. ,352695 -0. .342790 -0. , 012941

5. 180000 -0. ,435577 -0. .423739 -0. , 011008

5. 698000 -0. 527251 -0. ,513451 -0. ,009046

6. 216000 -0. 627737 -0. , 612003 -0. .007112

6. 734000 -0. .737058 -0. .719479 -0. , 005267 7.252000 -0.855238 -0.835970 -0.003578

7 .770000 -0 .982306 -0 .961580 -0 .002120

8 .288000 -1, .118289 -1 .096419 -0 .000976

8 .806000 -1, .263219 -1 .240609 -0, .000236

9, .324000 -1, .417130 -1 .394284 0, .000000

9, .842000 -1. .580058 -1, .557587 -0, .000375

10. ,360000 -1. ,752042 -1, .730675 -0. .001479

10. .878000 -1. .933123 -1, .913718 -0. ,003440

11. ,396000 -2. ,123346 -2. .106899 -0. ,006399

11. 914000 -2. 322756 -2. ,310416 -0. ,010506

12. 432000 -2. 531403 -2. ,524486 -0. 015928

12. 950000 -2. 749340 -2. 749340 -0. 022846 schwarschild 4m857x n.len

ASPHERIC CONSTANTS

(CURV) Y 4 6 8 10

(A) Y + (B)Y + (C)Y + (D)Y

2 2 1/2

(l+K) (CURV) Y )

ASPHERIC CURV

A( 3) -0.02766624 .312119 -0.898165E-05 0.934802E-08 O.OOOOOOE+00 O.OOOOOOE+OO

CURVATURE OF BEST SPHERE -0.027493

RADIUS OF BEST SPHERE = -36.373

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000000

0 .232000 -0 .000745 -0 .000740 0 .000005

0 .464000 -0 .002978 -0 .002960 0 .000019

0 .696000 -0 .006701 -0 .006660 0 .000041

0 .928000 -0 .011913 -0 .011840 0 .000073

1 .160000 -0 .018614 -0 .018502 0 .000112

1 .392000 -0 .026805 -0 .026646 0 .000159

1 .624000 -0 .036485 -0, .036273 0 .000212

1, .856000 -0, .047654 -0, .047384 0 .000270

2, .088000 -0, .060313 -0, .059981 0 .000332

2, .320000 -0, .074462 -0, .074065 0 .000397

2. .552000 -0, .090101 -0. .089638 0 .000462

2. .784000 -0. .107229 -0. , 106702 0, .000528

3. , 016000 -0. .125849 -0. .125258 0, .000590

3. ,248000 -0. ,145958 -0. ,145310 0, .000648

3. ,480000 -0. ,167559 -0. ,166860 0, .000699

3. 712000 -0. ,190651 -0. 189910 0. , 000741

3. 944000 -0. ,215234 -0. 214463 0. ,000771

4. 176000 -0. 241308 -0. 240522 ^' 0. ,000786

4. 408000 -0. 268875 -0. 268091 0. ,000784

4. 640000 -0. 297935 -0. 297173 0. 000762

4. 872000 -0. 328487 -0. 327772 0. 000715

5. 104000 -0. 360533 -0. 359891 0. 000642

5. 336000 -0. 394073 -0. 393535 0. 000537

5. 568000 -0. 429106 -0. 428708 0. 000398

5. 800000 -0. 465635 -0. 465414 0. 000221

6. 032000 -0. 503658 -0. 503658 0. 000000 APPENDIX C

Optical Prescription for Objective Optics depicted in FIG. 4. Form: PNPP (type B)

SURFACE DESCRIPTION THICKNESS APERTURE DESCRIPTION

ELT SUR RADIUS SHAPE OR DIMENSION SHAPE MATERIAL

NO. NO. SEPARATION OBJECT FL 237.1340

125.5236 160.444 C-l

DECENTER ( 1)

l 0.0000 181.301 CIR

(STOP)

RETURN (

DECENTER (

i 2 -203.104 A-l -125.5566 224.000 CIR

REFL

2 3 -31.766 A-2 420.38B5 19.500 C-2

REFL

DECENTER { 3)

3 4 INF A-3 -224.8319 11.000 9.200 C-3

RETUR ( 3)

DECENTER ( 4)

4 5 35.266 A-4 985.5318 7.400 4.800 C-4

RETURN ( 4 )

DECENTER) 5)

IMAGE INF 413.863

RETUR ( 5)

- Dimensions are given in millimeters

- Thickness is axial distance to next surface

- Image diameter shown above is a paraxial value,

it is not a ray traced value

APERTURE DATA

DIAMETER DECENTER

APERTURE SHAPE X Y X Y ROTATION

C- 1 CIRCLE 160.444 CIRCLE (OBSC) 22.500 22.500 0.000 -3.175

0.0

RECTANGLE (OBSC) 21.600 60.000 0.000 30.000

0.0

C- 2 CIRCLE 19.500 19.500 0.000 -3.175

0.0

C- 3 RECTANGLE 11.000 9.200 0.000 0.775

0.0

C- 4 RECTANGLE 7.400 4.800 0.000 2.920

0.0

ASPHERIC CONSTANTS

2

(CURV) Y 4 6 1 I 10

(A)Y + (B)Y + (C)Y + (D)Y

2 2 1/2

1 + (1- (1+K) (CURV) Y )

ASPHERIC CURV K A B C

D

A- 1 -0 .00492359 -0 .177909 1. .06780E-11 8. .01201E-17 0, , OOOOOE+00

0. ,O0OOOE+00

A- 2 -0 .03147977 -0 .645495 2. ,53860E-07 0. .OOOOOE+00 0. .OOOOOE+00

0.,00OOOE+00

A- 3 0 .00000000 0 .000000 -8. 75795E-08 0. OOOOOE+00 0. .OOOOOE+00

0. OOOOOE+00

A- 4 0 .02835567 0 .761823 -9. 57017E-06 0. OOOOOE+00 0. OOOOOE+00

0.00000E+00

DECENTERING CONSTANTS

DECENTER X Y Z ALPHA BETA

GAMMA

0( 1) 0. .0000 -31. .9686 0, .0000 0. .0000 0 .0000

0. .0000 (RETU)

D( 2) P- , 0000 0, ,2258 0. , 0000 0. .0085 0. .0000

0. .0000

D( 3) 0. .0000 0. .0000 0. .0000 3. .6902 0 .0000

0. .0000 (RETU)

D( 4) 0. .0000 -29. .1446 0. .0000 7. .3804 0. .0000

0. .0000 (RETU)

D( 5) 0. .0000 -51. .4026 0. .0000 7. 3773 0, .0000

0.0000 (RETU)

DECENTERING CONSTANT KEY: TYPE TRAILING CODE ORDER OF APPLICATION

DISPLACE (X,Y, Z)

TILT (ALPHA, BETA, GAMMA)

REFRACT AT SURFACE THICKNESS TO NEXT SURFACE

DECENTER & RETURN RETU DECENTER (X, Y, Z, ALPHA, BETA, GAMMA)

REFRACT AT SURFACE

RETURN (-GAMMA, -BETA, -ALPHA, -Z, -Y, THICKNESS TO NEXT SURFACE

REFERENCE WAVELENGTH = 13.5 NM

INFINITE CONJUGATES

EFL = -1.1191

BFL = 18.1212

FFL = -237.1402

F/NO = -0.0062

AT USED CONJUGATES REDUCTION 179.1972

FINITE F/NO 369.4788

OBJECT DIST 237.1340

TOTAL TRACK = 1418.1894

IMAGE DIST 985.5318

OAL 195.5236

PARAXIAL

IMAGE HT 22.8476

IMAGE DIST = -182.4227

SEMI-FIELD

ANGLE 5.0067

ENTR PUPIL

DIAMETER 181.3005

DISTANCE 125.5236

EXIT PUPIL

DIAMETER = 0.5595

DISTANCE = 18.1177 NOTES - FFL is measured from the first surface

- BFL is measured from the last surface

RelayB_Dec032010. len

ASPHERIC CONSTANTS

2

(CURV)Y 4 6 8 10

Z = + (A) Y + (B)Y + (C)Y + (D)Y

2 2 1/2

1 + (1- (1+K) (CORV) Y )

ASPHERIC CURV K A A( 1) -0.00492359 -0.177909 0.106780E-10 0.801201E-16 O.OOOOOOE+00 O.OOOOOOE+00

CURVATURE OF BEST SPHERE -0.004853

RADIUS OF BEST SPHERE = -206.058

Y ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000000

4 .480000 -0 .049414 -0 .048707 0 .000707

8 .960000 -0 .197716 -0 .194896 0 .002820

13 .440000 -0 .445083 -0 .438775 0 .006308

17 .920000 -0 .791815 -0 .780693 0 .011121

22 .400000 -1 .238330 -1 .221141 0 .017189

26 .880000 -1 .785174 -1 .760755 0 .024419

31 .360000 -2 .433019 -2 .400325 0 .032695

35 .840000 -3. .182670 -3. .140794 0. .041875

40. .320000 -4. .035066 -3. .983273 0. .051793

44. .800000 -4, .991294 -4. .929043 0, .062251

49. .280000 -6. .052588 -5. , 979570 0. .073018

53. .760000 -7, .220341 -7. .136511 0. .083830

58. .240000 -8. .496116 -8, .401738 0. .094379

62. .720000 -9. , 881655 -9. .777342 0. .104313

67. ,200000 -11. ,378892 -11. ,265663 0. .113228

71. ,680000 -12. 989969 -12. ,869307 0. .120662

76. 160000 -14. 717253 -14. 591169 0. 126084

80. 640000 -16. 563355 -16. 434472 0. 128883

85. 120000 -18. 531152 -18. 402793 0. 128359

89. 600000 -20. 623816 -20. 500111 0. 123705

94. 080000 -22. 844840 -22. 730853 0. 113988

98. 560000 -25. 198079 -25. 099953 0. 098126

103. 040000 -27. 687786 -27. 612923 0. 074863

107. 520000 -30. 318661 -30. 275932 0. 042729

112. 000000 -33. 095910 -33. 095910 0. 000000

RelayB_Dec032010.len

ASPHERIC CONSTANTS

(CURV) Y 4 6 8 10

(A) Y + (B)Y + (C)Y + (D)Y

2 2 1/2

(1+K) (CURV) Y )

ASPHERIC CURV

A( 2) -0.03147977 -0.645495 0.253860E-06 O.OOOOOOE+OO O.OOOOOOE+00 O.OOOOOOE+00

CURVATURE OF BEST SPHERE -0.030591

RADIUS OF BEST SPHERE = -32.689

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0.000000 0.000000 0.000000 -0.019144

0.512000 -0.004126 -0.004010 -0.019027

1.024000 -0.016506 -0.016042 -0.018680 1.536000 -0.037141 -0.036107 -0.018109

2 .048000 -0 .066038 -0 .064217 -0 .017323

2 .560000 -0 .103201 -0 .100395 -0 .016337

3 .072000 -0 .148641 -0 .144666 -0 .015169

3 .584000 -0 .202366 -0 .197065 -0, .013843

4. .096000 -0. .264390 -0, .257631 -0, .012384

4 .608000 -0 .334727 -0 .326409 -0, .010826

5. .120000 -0 .413392 -0, .403452 -0, .009204

5. .632000 -0. .500403 -0, .488819 -0, .007559

6. .144000 -0, .595782 -0. ,582576 -0. , 005938

6. .656000 -0. , 699550 -0. , 684798 -0. ,004392

7. .168000 -0. ,811731 -0. ,795566 -0. 002979

7. 680000 -0. .932353 -0. 914969 -0. 001760

8. .192000 -1. , 061443 -1. ,043105 -0. ,000806

8. 704000 -1. ,199032 -1. 180080 -0. 000192

9. 216000 -1. 345154 -1. 326011 0. οοοοοο

9. 728000 -1. 499845 -1. 481022 -0. 000321

10. 240000 -1. 663142 -1. 645250 -0. 001253

10. 752000 -1. 835085 -1. 818843 -0. 002901

11. 264000 -2. 015718 -2. 001958 -0. 005384

11. 776000 -2. 205086 -2. 194767 -0. 008825

12. 288000 -2. 403238 -2. 397456 -0. 013362

12. 800000 -2. 610224 -2. 610224 -0. 019144

RelayB_Dec032010. len

ASPHERIC CONSTANTS

(CURV) Y 4 6 8 10

(A) Y + (B)Y + (C)Y + (D) Y

2 2 1/2

(1+K) (CURV) Y )

ASPHERIC CURV

A( 3) 0.00000000 0.000000 -0.875795E-07 O.OOOOOOE+OO O.OOOOOOE+00 O.OOOOOOE+00

CURVATURE OF BEST SPHERE -0.000006

RADIUS OF BEST SPHERE = -171184.091

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0, .000000 0 .000024

0 .231000 0 .000000 0, .000000 0, .000024

0 .462000 0 .000000 -0 .000001 0 .000024

0 .693000 0 .000000 -0 .000001 0 .000023

0 .924000 0 .000000 -0, .000002 0, .000022

1, .155000 0 .000000 -0, .000004 0. .000021

1, .386000 0, .000000 -0, .000006 0, .000019

1. .617000 -0, .000001 -0. ,000008 0, .000017

1. , 848000 -0, .000001 -0. ,000010 0. .000015

2, .079000 -0, .000002 -0, .000013 0. .000013

2, .310000 -0, .000002 -0. .000016 0. .000011

2 , .541000 -0, .000004 -0. .000019 0. .000009

2. ,772000 -0. , 000005 -0. ,000022 0. .000007

3. ,003000 -0. ,000007 -0. ,000026 0. .000005

3. 234000 -0. ,000010 -0. 000031 0. 000003

3. ,465000 -0. ,000013 -0. ,000035 0. ,000002

3. , 696000 -0. ,000016 -0. ,000040 0. ,000001

3. , 927000 -0. ,000021 -0. ,000045 0. ,000000

4. 158000 -0. ,000026 -0. 000050 0. 000000

4. 389000^■ -0. 000032 -0. 000056 0. 000001 4.620000 -0.000040 -0.000062 0.000002

4.851000 -0.000048 -0.000069 0.000004

5.082000 -0.000058 -0.000075 0.000007

5.313000 -0.000070 -0.000082 0.000012

5.544000 -0.000083 -0.000090 0.000017

5.775000 -0.000097 -0.000097 0.000024

RelayB_Dec032010. len

ASPHERIC CONSTANTS

(CURV) Y 4 6 8 10

+ (A)Y + (B)Y +^' (C)Y + (D) Y

2 2 1/2

(1+K) (CURV) Y )

ASPHERIC CURV

A( 4) 0.02835567 0.761823 -0.957017E-05 O.OOOOOOE+00 O.OOOOOOE+00 O.OOOOOOE+00

CURVATURE OF BEST SPHERE 0.027759

RADIUS OF BEST SPHERE = 36.024

ASPH SAG SPHERE SAG SAG DIFFERENCE

(Z)

0 .000000 0 .000000 0 .000000 0 .000000

0 .249000 0 .000879 0 .000861 -0 .000018

0 .498000 0 .003516 0 .003442 -0 .000073

0 .747000 0 .007910 0 .007746 -0 .000164

0 .996000 0 .014060 0 .013772 -0. .000289

1 .245000 0 .021965 0 .021520 -0 .000445

1. . 94000 0 .031623 0 .030993 -0, .000629

1. .743000 0 .043031 0 .042192 -0. .000839

1. .992000 0, .056187 0 .055118 -0, .001069

2 , .241000 0, .071088 0. .069773 -0, .001315

2. .490000 0. .087730 0. .086159 -0. , 001571

2. ,739000 0. , 106109 0. .104278 -0. .001831

2. .988000 0. .126222 0. .124134 -0. ,002087

3. ,237000 0. .148062 0. , 145729 -0. ,002333

3. ,486000 0. .171626 0. .169066 -0. .002560

3. ,735000 0. .196908 0, .194149 -0. .002760

3. ,984000 0. .223903 0. .220981 -0. .002922

4. ,233000 0. .252603 0. .249566 -0. .003037

4. 482000 0. .283003 0. ,279908 -0. 003094

4. 731000 0. 315095 0. ,312013 -0. 003083

4. 980000 0. 348873 0. ,345884 -0. 002990

5. 229000 0. 384330 0. 381526 -0. 002804

5. 478000 0. 421458 0. 418946 -0. 002511

5. 727000 0. 460248 0. 458148 -0. 002099

5. 976000 0. 500692 0. 499139 -0. 001553

6. 225000 0. 542783 0. 541925 -0. 000858

6. 474000 0. 586512 0. 586512 0. 000000

Claims

What is claimed is: 1. An apparatus for inspecting a photomask using extreme ultra-violet (EUV) light, the apparatus comprising:

an illumination source for generating the EUV light which illuminates a target substrate;

objective optics for receiving and projecting the EUV light which is reflected from the target substrate; and

a sensor for detecting the EUV light which is projected by the objective optics,

wherein the objective optics comprises

a first mirror which is arranged to receive and reflect the EUV light which is reflected from the target substrate,

a second mirror which is arranged to receive and reflect the EUV light which is reflected by the first mirror,

a third mirror which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and

a fourth mirror which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

2. The apparatus of claim 1 , wherein the second mirror partially obscures the first mirror from the reflected EUV light.

3. The apparatus of claim 1 , wherein the light reflected by the second mirror passes through an opening in the first mirror.

4. The apparatus of claim 1 , wherein the first, second, third, and fourth mirrors are, respectively, concave, concave, convex and concave.

5. The apparatus of claim 1 , wherein the first, second, third, and fourth mirrors are, respectively, concave, convex, concave and convex.

6. The apparatus of claim 1 , wherein the first, second, third, and fourth mirrors are, respectively, concave, convex, concave, and concave 7. The apparatus of claim 1 , wherein the numerical aperture of the objective optics is greater than 0.2.

8. The apparatus of claim 1 , wherein a field of view of the apparatus is at least greater than 5,000 square microns.

9. The apparatus of claim 1 , wherein a distance between the target substrate and the second mirror is greater than 100 millimeters.

10. Objective optics for extreme ultra-violet light formed by an arrangement of mirrors, the objective optics comprising:

a fourth mirror which is arranged to receive and reflect the EUV light which is reflected by the third mirror,

wherein the numerical aperture of the objective optics is greater than 0.2.

1 1. The objective optics of claim 10, wherein the second mirror partially obscures the first mirror from the reflected EUV light. 12. The objective optics of claim 10, wherein the light reflected by the second mirror passes through an opening in the first mirror.

13. The objective optics of claim 10, wherein the first, second, third, and fourth mirrors are, respectively, concave, concave, convex and concave.

14. The objective optics of claim 10, wherein the first, second, third, and fourth mirrors are, respectively, concave, convex, concave and convex.

15. The objective optics of claim 10, wherein the first, second, third, and fourth mirrors are, respectively, concave, convex, concave, and concave 6. The objective optics of claim 10, wherein a field of view of the apparatus is at least greater than 5,000 square microns.

17. The objective optics of claim 10, wherein a distance between the target substrate and the second mirror is greater than 100 millimeters.

18. A method of projecting extreme-ultraviolet light reflected from a manufactured substrate to a sensor, the method comprising:

receiving and reflecting the EUV light which is reflected from the target substrate by a first mirror;

receiving and reflecting the EUV light which is reflected from the first mirror by a second mirror;

receiving and reflecting the EUV light which is reflected from the second mirror by a third mirror;

receiving and reflecting the EUV light which is reflected from the third mirror by a fourth mirror; and

detecting the EUV light which is reflected by the fourth mirror.

19. The method of claim 18, wherein the numerical aperture of the objective optics is greater than 0.2.

20. The method of claim 18, wherein the second mirror partially obscures the first mirror from the reflected EUV light.