WO2012090641A1 - Cellule solaire - Google Patents
Cellule solaire Download PDFInfo
- Publication number
- WO2012090641A1 WO2012090641A1 PCT/JP2011/077769 JP2011077769W WO2012090641A1 WO 2012090641 A1 WO2012090641 A1 WO 2012090641A1 JP 2011077769 W JP2011077769 W JP 2011077769W WO 2012090641 A1 WO2012090641 A1 WO 2012090641A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductivity type
- conductivity
- finger electrode
- type
- solar cell
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 25
- 244000126211 Hericium coralloides Species 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 description 22
- 239000000969 carrier Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a back junction solar cell.
- Patent Document 1 describes a solar cell in which comb-shaped p-side electrodes and n-side electrodes that are interleaved with each other are formed on the back surface as a back surface junction type solar cell.
- this back junction solar cell it is not necessary to provide an electrode on the light receiving surface side. For this reason, in the back junction solar cell, the light receiving efficiency can be increased. Therefore, higher photoelectric conversion efficiency can be realized.
- the present invention has been made in view of such a point, and an object thereof is to provide a solar cell having improved photoelectric conversion efficiency.
- the solar cell according to the present invention includes a solar cell substrate, one conductivity type side electrode, and another conductivity type side electrode.
- the solar cell substrate has one conductivity type surface and another conductivity type surface on one main surface.
- the one conductivity type side electrode is arranged on the one conductivity type surface.
- the other conductivity type side electrode is disposed on the other conductivity type surface.
- the other conductivity type side electrode has a plurality of other conductivity type side finger electrode portions and another conductivity type side bus bar portions. Each of the plurality of other conductivity type finger electrode portions extends from one side in the first direction toward the other side.
- the plurality of other conductivity type finger electrode portions are arranged along a second direction perpendicular to the first direction.
- the other conductivity type side bus bar portion electrically connects a plurality of other conductivity type side finger electrode portions.
- the one conductivity type side electrode has a plurality of comb-like electrode portions.
- the plurality of comb-like electrode portions are arranged along the second direction.
- Each of the plurality of comb-like electrode portions has a plurality of one-conductivity-type finger electrode portions and a one-conductivity-type busbar portion.
- Each of the plurality of one-conductivity-type finger electrode portions extends from the other side in the first direction toward one side between the other-conductivity-type finger electrode portions adjacent in the second direction.
- the one conductivity type side bus bar portion electrically connects a plurality of one conductivity type side finger electrode portions.
- the plurality of other-conductivity-type finger electrode portions include other-conductivity-type finger electrode portions located between the comb-shaped electrode portions adjacent in the second direction.
- the front end portion of the other conductivity type finger electrode portion located between the adjacent comb-shaped electrode portions is positioned between the one conductivity-type bus bar portions of the adjacent comb-shaped electrode portions.
- a solar cell having improved photoelectric conversion efficiency can be provided.
- FIG. 1 is a schematic plan view of the solar cell according to the first embodiment.
- FIG. 2 is a schematic plan view of the solar cell according to the second embodiment.
- FIG. 3 is a schematic plan view of a solar cell according to the third embodiment.
- FIG. 4 is a schematic plan view of a solar cell according to the fourth embodiment.
- FIG. 5 is a schematic plan view of a solar cell according to the fifth embodiment.
- FIG. 6 is a schematic plan view in which a part of the solar cell according to the fifth embodiment is enlarged.
- FIG. 7 is a schematic plan view in which a part of the solar cell according to the first embodiment is enlarged.
- FIG. 1 is a schematic plan view of the back surface of the solar cell 1 of the present embodiment.
- FIG. 1 and FIGS. 2 to 7 described below hatching is provided for easy understanding of the shape of the electrode, but the hatched region in FIGS. 1 to 7 is not a cross section.
- the solar cell 1 is a so-called back junction type solar cell.
- the solar cell 1 has a solar cell substrate 10.
- the solar cell substrate 10 is a member that generates carriers such as electrons and holes by receiving light.
- Solar cell substrate 10 has a light receiving surface and a back surface 10a. The n-type surface 10an and the p-type surface 10ap are exposed on the back surface 10a.
- the solar cell substrate 10 includes a substrate made of a crystalline semiconductor having one conductivity type, and a p-type amorphous semiconductor layer and an n-type amorphous semiconductor layer disposed on the back surface of the semiconductor substrate. There may be.
- the p-type surface 10ap is constituted by the surface of the p-type amorphous semiconductor layer.
- the n-type surface 10an is constituted by the surface of the n-type amorphous semiconductor layer.
- the p-type amorphous semiconductor layer can be formed of, for example, p-type amorphous silicon containing hydrogen.
- the n-type amorphous semiconductor layer can be formed of, for example, n-type amorphous silicon containing hydrogen.
- An i-type amorphous semiconductor layer having a thickness that does not substantially contribute to power generation is disposed between each of the p-type amorphous semiconductor layer and the n-type amorphous semiconductor layer and the crystalline semiconductor layer. May be.
- the i-type amorphous semiconductor layer can be formed of, for example, i-type amorphous silicon containing hydrogen.
- the solar cell substrate 10 has one conductivity type, and a semiconductor substrate in which a p-type dopant diffusion region in which a p-type dopant is diffused and an n-type dopant diffusion region in which an n-type dopant is diffused is provided on the back surface side. It may be configured.
- the p-type surface 10ap is constituted by the surface of the p-type dopant diffusion region.
- the n-type surface 10an is constituted by the surface of the n-type dopant diffusion region.
- the thickness of the semiconductor substrate is preferably 2 mm or less.
- the lower limit of the thickness of the semiconductor substrate is preferably 0.01 mm.
- the specific resistance of the crystalline semiconductor substrate is preferably 0.1 ⁇ cm to 100 ⁇ cm.
- the solar cell substrate 10 includes an n-type semiconductor substrate, and a p-type amorphous semiconductor layer and an n-type amorphous semiconductor layer disposed on the back surface of the semiconductor substrate.
- n-type semiconductor substrate a p-type amorphous semiconductor layer and an n-type amorphous semiconductor layer disposed on the back surface of the semiconductor substrate.
- one conductivity type is n-type, and holes become minority carriers.
- a p-side electrode 11p and an n-side electrode 11n are disposed on the back surface 10a of the solar cell substrate 10.
- the p-side electrode 11p is disposed on the p-type surface 10ap.
- the n-side electrode 11n is disposed on the n-type surface 10an.
- the material of the p-side electrode 11p and the n-side electrode 11n is not particularly limited as long as it is a conductive material.
- Each of the p-side electrode 11p and the n-side electrode 11n includes, for example, a metal such as silver, copper, aluminum, titanium, nickel, or chromium, an alloy containing one or more of these metals, TCO (Transparent Conductive Oxide), and the like. Can be formed.
- each of the p-side electrode 11p and the n-side electrode 11n may be configured by a stacked body of a plurality of conductive layers made of, for example, the above metal, alloy, or TCO.
- Each of the p-side electrode 11p and the n-side electrode 11n can be formed using, for example, a sputtering method, a vapor deposition method, a screen printing method, a plating method, or the like.
- the p-side electrode 11p is composed of one comb-like electrode.
- the p-side electrode 11p may be composed of a plurality of comb-like electrodes.
- the p-side electrode 11p has a plurality of finger electrode portions 12p as p-side finger electrode portions and a bus bar portion 13p as a p-side bus bar portion.
- Each of the plurality of finger electrode portions 12p extends linearly from the x2 side in the x direction toward the x1 side.
- the plurality of finger electrode portions 12p are arranged along the y direction perpendicular to the x direction.
- the plurality of finger electrode portions 12p are electrically connected by the bus bar portion 13p.
- the bus bar portion 13p is disposed on the x2 side of the plurality of finger electrode portions 12p.
- the bus bar portion 13p is formed in a linear shape.
- the shape of the p-side bus bar portion is not particularly limited as long as a plurality of p-side finger electrode portions are electrically connected.
- the p-side bus bar portion may not be linear.
- the p-side bus bar portion may include an electrode pad and a plurality of connection portions that connect the electrode pad and the p-side finger electrode portion.
- the n-side electrode 11n is separated into a plurality of electrode portions. Specifically, the n-side electrode 11n has a plurality of comb-like electrode portions 14. The number of comb-like electrode portions 14 included in the n-side electrode 11n is preferably 2 to 50, and more preferably 3 to 5.
- the plurality of comb-like electrode portions 14 are arranged along the y direction. Each of the plurality of comb-like electrode portions 14 and the p-side electrode 11p are interleaved with each other.
- Each of the plurality of comb-like electrode portions 14 includes a plurality of finger electrode portions 12n as n-side finger electrode portions and a bus bar portion 13n.
- the plurality of finger electrode portions 12n are arranged along the y direction.
- Each of the plurality of finger electrode portions 12n extends linearly from the x1 side in the x direction toward the x2 side between the finger electrode portions 12p adjacent in the y direction.
- the plurality of finger electrode portions 12n are electrically connected by the bus bar portion 13n.
- the bus bar portion 13n is disposed on the x1 side of the plurality of finger electrode portions 12n.
- the bus bar portion 13n is formed in a linear shape.
- the shape of the n-side bus bar portion is not particularly limited as long as a plurality of n-side finger electrode portions are electrically connected.
- the n-side bus bar portion may not be linear.
- the n-side bus bar portion may include an electrode pad and a plurality of connection portions that connect the electrode pad and the n-side finger electrode portion.
- the shortest distance between the bus bar portions 13n of the comb-like electrode portions 14 adjacent in the y direction is preferably 0.001 mm to 10 mm, and more preferably 0.001 mm to 4 mm.
- finger electrode portions 12p are arranged. That is, the plurality of finger electrode portions 12p include the finger electrode portions 12p1 positioned between the comb-like electrode portions 14 adjacent in the y direction.
- the finger electrode portion 12p1 is longer than the other finger electrode portions 12p.
- the tip of the finger electrode portion 12p1 is located between the bus bar portions 13n of the comb-like electrode portions 14 adjacent in the y direction. In other words, the tip of the finger electrode portion 12p1 reaches the position of the bus bar portion 13n in the x direction.
- the tip of the finger electrode portion 12p1 faces at least a part of the bus bar portion 13n in the y direction.
- the tip of the finger electrode portion 12p1 on the x1 side is flush with the end of the bus bar portion 13n on the x1 side.
- the tip end of the finger electrode portion 12p1 on the x1 side may be located on the x2 side with respect to the tip end on the x1 side of the bus bar portion 13n, or may be located on the x1 side with respect to the tip end on the x1 side of the bus bar portion 13n. That is, the finger electrode portion 12p1 only needs to face at least a part of the bus bar portion 13n in the y direction.
- the finger electrode portion located on the outermost side in the y direction is the finger electrode portion 12p. That is, the plurality of finger electrode portions 12p include the finger electrode portions 12p2 located on the outermost side in the y direction among the plurality of finger electrode portions 12p and the plurality of finger electrode portions 12n.
- the finger electrode portion 12p2 faces at least a part of the bus bar portion 13n in the y direction. That is, the tip of the finger electrode portion 12p2 reaches the position of the bus bar portion 13n in the x direction.
- the tip of the finger electrode portion 12p2 on the x1 side and the end of the bus bar portion 13n on the x1 side are flush with each other.
- the tip end of the finger electrode portion 12p2 on the x1 side may be located on the x2 side with respect to the tip end on the x1 side of the bus bar portion 13n, or may be located on the x1 side with respect to the tip end on the x1 side of the bus bar portion 13n.
- the n-side electrode 11n is divided into a plurality of comb-like electrode portions 14.
- the p-side finger electrode portion 12p1 is located between the bus bar portions 13n.
- the area of the n-side bus bar portion 13n is small.
- the distance which must move until the holes which are the minority carriers generated in the portion located under the bus bar portion 13n of the solar cell substrate 10 are collected by the p-side electrode 11p is short. Therefore, in this embodiment, the loss
- the finger electrode portion 12p2 is also provided so as to face the bus bar portion 13n in the y direction, similarly to the finger electrode portion 12p1. Therefore, disappearance due to recombination of holes is more effectively suppressed. Therefore, further improved photoelectric conversion efficiency can be realized.
- the shortest distance between the bus bar portions 13n is 0.001 mm or more.
- the photoelectric conversion efficiency may decrease due to an increase in the resistance component.
- the shortest distance between the bus-bar parts 13n is 10 mm or less, and it is preferable that it is 4 mm or less.
- FIG. 2 is a schematic plan view of the solar cell according to the second embodiment.
- the solar cell 2 of the present embodiment differs from the solar cell 1 of the first embodiment in the shape of the bus bar portion 13n and the shape of the finger electrode portion 12p1.
- the bus bar portion 13n is narrower from the x2 side in the x direction toward the x1 side.
- the bus bar portion 13n has a trapezoidal shape with the upper base facing the x2 side.
- the tip of the finger electrode portion 12p1 is wider from the x2 side in the x direction toward the x1 side.
- the tip of the finger electrode portion 12p1 has a trapezoidal shape with the bottom bottom facing the x1 side.
- the area of the bus bar portion 13n is smaller than that of the solar cell 1 of the first embodiment.
- the finger electrode portion 12p1 is wider toward the x1 side, the holes generated in the portion located below the bus bar portion 13n of the solar cell substrate 10 move until they are collected by the p-side electrode 11p. The distance you have to do is getting shorter. Therefore, disappearance due to hole recombination can be more effectively suppressed. Therefore, further improved photoelectric conversion efficiency can be obtained.
- the base angle of the bus bar portion 13n (and the base angle of the tip portion of the finger electrode portion 12p1) is preferably 0 ° to 90 ° (180 ° to 90 °), and 30 ° to 60 ° (150 ° to 120 °) is more preferable.
- FIG. 3 is a schematic plan view of a solar cell according to the third embodiment.
- the solar cell 3 according to the present embodiment is the first embodiment described above in that a plurality of finger electrode portions 12p1 are disposed between the comb-like electrode portions 14 adjacent in the y direction. Different from the solar cell 1 of FIG. Even in this case, improved photoelectric conversion efficiency can be realized as in the first embodiment.
- FIG. 4 is a schematic plan view of a solar cell according to the fourth embodiment.
- the solar cell 4 according to the present embodiment is similar to the second embodiment in that each of the front end portions of the bus bar portion 13n and the finger electrode portion 12p1 is formed in a trapezoidal shape. Different from the solar cell 3 of the third embodiment. For this reason, the solar cell 4 of this embodiment has a higher photoelectric conversion efficiency than the solar cell 3.
- FIG. 5 is a schematic plan view of a solar cell according to the fifth embodiment.
- FIG. 6 is a schematic plan view in which a part of the solar cell according to the fifth embodiment is enlarged.
- the solar cell 5 of the present embodiment is different from the solar cell 1 of the first embodiment in that the p-side electrode 11p has an electrode portion 15p.
- the electrode part 15p is electrically connected to the finger electrode part 12p1. Specifically, in the present embodiment, the electrode portion 15p connects the tip portions of the plurality of finger electrode portions 12p1.
- the electrode portion 15p is provided on the x1 side of the bus bar portion 13n so as to extend along the y direction.
- the holes 16 generated in the portion located below the x1 side portion of the bus bar portion 13n in the solar cell substrate 10 are finger electrodes. It must travel a long distance before being collected by the part 12p. Therefore, the holes 16 are likely to disappear due to recombination.
- the electrode portion 15p as described above is provided. For this reason, as shown in FIG. 6, until the holes 16 generated in the portion located below the x1 side portion of the bus bar portion 13n in the solar cell substrate 10 are collected by the electrode portion 15p of the p-side electrode 11p. The distance you have to move to is short. Therefore, the holes 16 are unlikely to disappear due to recombination. Therefore, more improved photoelectric conversion efficiency can be realized.
- one conductivity type is n-type and the other conductivity type is p-type.
- the present invention is not limited to this, and one conductivity type may be p-type and another conductivity type may be n-type. In this case, the same effect as in the case where electrons are minority carriers and holes are minority carriers can be obtained.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention concerne une cellule solaire dont le rendement de conversion photoélectrique est amélioré. Une électrode (11p) sur le côté d'un autre type de conductivité a une pluralité de sections d'électrode en forme de doigts (12p) sur le côté de l'autre type de conductivité et une section de barre omnibus (13p) sur le côté de l'autre type de conductivité qui connecte électriquement la pluralité de sections d'électrode en forme de doigts (12p) sur le côté de l'autre type de conductivité. Une électrode (11n) sur le côté d'un type de conductivité a une pluralité de sections d'électrode en forme de peigne (14). Chaque élément de la pluralité de sections d'électrode en forme de peigne (14) a une pluralité de sections d'électrode en forme de doigts d'un côté conducteur (12n) sur le côté du premier type de conductivité et une section de barre omnibus (13n) sur le côté du premier type de conductivité qui connecte électriquement la pluralité de sections d'électrode en forme de doigts (12n) sur le côté du premier type de conductivité. La pluralité de sections d'électrode en forme de doigts (12p) sur le côté de l'autre type de conductivité comprend une section d'électrode en forme de doigts (12p1) sur le côté de l'autre type de conductivité, positionnée entre des sections d'électrodes en forme de peigne adjacentes (14) dans une deuxième direction (y). La section d'extrémité de la section d'électrode en forme de doigts (12p1) sur le côté de l'autre type de conductivité est positionnée entre les sections de barre omnibus (13n) sur le côté du premier type de conductivité dans les sections d'électrodes en forme de peigne adjacentes (14).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010294510A JP2014053330A (ja) | 2010-12-29 | 2010-12-29 | 太陽電池 |
JP2010-294510 | 2010-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012090641A1 true WO2012090641A1 (fr) | 2012-07-05 |
Family
ID=46382761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/077769 WO2012090641A1 (fr) | 2010-12-29 | 2011-12-01 | Cellule solaire |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014053330A (fr) |
TW (1) | TW201242053A (fr) |
WO (1) | WO2012090641A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2824712A1 (fr) * | 2013-07-09 | 2015-01-14 | Inventec Solar Energy Corporation | Cellule solaire à contact arrière |
US11205732B2 (en) * | 2014-09-19 | 2021-12-21 | Kabushiki Kaisha Toshiba | Multi-junction solar cell |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI492397B (zh) * | 2012-11-13 | 2015-07-11 | 茂迪股份有限公司 | 太陽能電池與太陽能電池模組 |
US11424372B2 (en) * | 2016-06-10 | 2022-08-23 | Shin-Etsu Chemical Co., Ltd. | Solar cell, solar cell manufacturing system, and solar cell manufacturing method |
WO2018037672A1 (fr) * | 2016-08-22 | 2018-03-01 | 株式会社カネカ | Cellule solaire et module de cellule solaire |
CN114242810B (zh) * | 2022-02-24 | 2022-04-29 | 广东爱旭科技有限公司 | 背接触电池的电极结构、电池、组件以及电池系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4133698A (en) * | 1977-12-27 | 1979-01-09 | Texas Instruments Incorporated | Tandem junction solar cell |
US4478879A (en) * | 1983-02-10 | 1984-10-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Screen printed interdigitated back contact solar cell |
JPH10229210A (ja) * | 1997-02-14 | 1998-08-25 | Toyota Motor Corp | 太陽電池セル |
WO2006005116A1 (fr) * | 2004-07-08 | 2006-01-19 | Newsouth Innovations Pty Limited | Electrodes formees par laser pour photopiles |
JP2010283201A (ja) * | 2009-06-05 | 2010-12-16 | Sharp Corp | 太陽電池セル、配線シート付き太陽電池セルおよび太陽電池モジュール |
-
2010
- 2010-12-29 JP JP2010294510A patent/JP2014053330A/ja not_active Withdrawn
-
2011
- 2011-12-01 WO PCT/JP2011/077769 patent/WO2012090641A1/fr active Application Filing
- 2011-12-27 TW TW100148829A patent/TW201242053A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4133698A (en) * | 1977-12-27 | 1979-01-09 | Texas Instruments Incorporated | Tandem junction solar cell |
US4478879A (en) * | 1983-02-10 | 1984-10-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Screen printed interdigitated back contact solar cell |
JPH10229210A (ja) * | 1997-02-14 | 1998-08-25 | Toyota Motor Corp | 太陽電池セル |
WO2006005116A1 (fr) * | 2004-07-08 | 2006-01-19 | Newsouth Innovations Pty Limited | Electrodes formees par laser pour photopiles |
JP2010283201A (ja) * | 2009-06-05 | 2010-12-16 | Sharp Corp | 太陽電池セル、配線シート付き太陽電池セルおよび太陽電池モジュール |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2824712A1 (fr) * | 2013-07-09 | 2015-01-14 | Inventec Solar Energy Corporation | Cellule solaire à contact arrière |
US11205732B2 (en) * | 2014-09-19 | 2021-12-21 | Kabushiki Kaisha Toshiba | Multi-junction solar cell |
Also Published As
Publication number | Publication date |
---|---|
JP2014053330A (ja) | 2014-03-20 |
TW201242053A (en) | 2012-10-16 |
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