WO2012054579A1 - Methods and apparatus for igniting and sustaining plasma - Google Patents
Methods and apparatus for igniting and sustaining plasma Download PDFInfo
- Publication number
- WO2012054579A1 WO2012054579A1 PCT/US2011/056853 US2011056853W WO2012054579A1 WO 2012054579 A1 WO2012054579 A1 WO 2012054579A1 US 2011056853 W US2011056853 W US 2011056853W WO 2012054579 A1 WO2012054579 A1 WO 2012054579A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- turn
- coil
- layer
- wound
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/013—Arc cutting, gouging, scarfing or desurfacing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Definitions
- substrates such as wafers undergo deposition and etching processes to form features thereon.
- the processing of semiconductor substrates often leaves residues, such as polymer deposition, between processing steps.
- Atmospheric inductively coupled plasma torches have been employed to clean substrates in preparation for further processing.
- FIG. 1 shows a typical prior art atmospheric inductively coupled plasma torch 100, which includes a double-wall cylinder 102.
- Cylinder 102 is typically formed out of quartz or a similarly suitable material.
- a cooling gas inlet 104 permits a cooling gas, such as nitrogen or air for example, to be injected in between the cylinder walls to thermally regulate double-wall cylinder 102 during use.
- a cooling gas such as nitrogen or air for example
- a coil 106 is shown wrapped around the outer periphery of double-wall cylinder
- a process gas e.g., hydrogen or nitrogen
- a process gas e.g., hydrogen or nitrogen
- an appropriate driver RF signal e.g., at 40 MHz
- coil 106 acts as part of a series LC resonance circuit to ignite a plasma from the process gas.
- liquid cooling is typically employed.
- the inductively coupled plasma formed within atmospheric inductively coupled plasma torch 100 is ejected from opening 120.
- the hot jet of plasma or activated neutral species ejected from opening 120 may then be employed to remove or clean materials, such as unwanted polymer deposition after an ion implantation process, from substrates.
- the induced voltage on coil 106 is a function of the frequency of the driver RF signal.
- a typical atmospheric inductively coupled plasma torch may experience up to 20 KV (peak-to-peak) between the ends of coil 106, for example.
- the high induced voltage is necessary for igniting plasma at typical atmospheric conditions.
- the high RF driver frequency employed in the prior art presents cost and engineering challenges.
- many processing systems already employ lower-frequency RF sources e.g., 10-30 MHz, such as 13.56 MHz or 27.12 MHz
- lower-frequency RF sources e.g., 10-30 MHz, such as 13.56 MHz or 27.12 MHz
- components and expertise for designing, manufacturing, qualifying, and maintaining lower-frequency subsystems are readily available at lower cost
- tool-to-tool repeatability is improved when a lower driver RF frequency is employed.
- the invention relates to methods and apparatus for igniting and sustaining plasma at a lower driver RF frequency in an atmospheric inductively coupled plasma torch.
- FIG. 1 shows a typical prior art atmospheric inductively coupled plasma torch.
- FIG. 2A-2D show cut-away drawings of an example improved 2-layer coil that employs the ULLU winding pattern.
- the induced voltage on the coil that functions as part of a series LC resonance circuit is a function of the driver RF frequency. Lowering the driver RF frequency has the effect of lowering the induced voltage on the coil. Unless compensation is made, the lower induced voltage may be insufficient to ignite the plasma in an atmospheric inductively coupled plasma torch.
- the induced voltage on the coil is also a function of the coil inductance, or L.
- increasing the inductance of such a coil has the effect of increasing the induced voltage on the coil.
- a high induced voltage may be maintained even if the driver RF frequency is lowered.
- a higher induced voltage may be achieved if the driver RF frequency remains the same.
- the inductance of a cylindrical coil is proportional to the square of the number of turns.
- the inductance of a cylindrical coil is proportional to the square of the number of turns.
- atmospheric inductively coupled plasma torch from exceeding a certain length or bulk, for example.
- the number of turns of a coil can be effectively increased by utilizing a multi-layer coil.
- an outer coil layer of 100 turns may overlay an inner coil layer of 100 turns, effectively providing a coil with an effective number of turns greater than 100 without increasing the coil length.
- the inventors herein realize that the atmospheric inductively coupled plasma torch application involves arcing risks that are not typically experienced in transformer coil designs. As discussed earlier, the induced voltage between the ends of the coil may approach multiple tens of thousands of volts to effectively ignite plasma at atmospheric conditions. If two coil layers are wound such that the coil ends are spatially close to one another, arcing may occur.
- the winding for the first coil layer end may start at an arbitrary point X on the quartz cylinder, proceeds toward point Y as it is wound around the quartz cylinder to form an inner coil layer, advances from the inner coil layer to the outer coil layer at point Y, and is wound back toward point X on the quartz cylinder to form the other end of the coil.
- both ends of the coil are near point X. If die voltage difference between the two ends of the coil exceeds die breakdown voltage of the medium situated between the two coil ends (typically air), it is possible that arcing may occur between both coil ends due to the high voltage difference and the closeness of both coil ends.
- Embodiments of the invention relate to methods and apparatus for maintaining a plasma-ignition capable voltage on the coil of an atmospheric inductively coupled plasma torch without increasing the physical length of the coil or unduly increasing its bulk while minimizing arcing damage.
- the coil discussed herein represents the coil that is wound around the cylinder or vessel (since i s possible to have a non-cylindrical vessel) that is used to generate and contain the plasma.
- novel winding patterns are provided to minimize the voltage difference between adjacent multi-turns.
- a multi-turn refers to multiple (at least two) turns that are wound on top of one another and are wound continuously from the bottom turn to die top turn or vice versa.
- novel winding patterns keep the voltage difference between adjacent multi-turns to a few thousand volts (as compared to tens of thousands) to minimize arcing. In one or more embodiments, novel winding patterns (and methods therefor) keep the ends of the coil (i.e., the parts of the coil that experience the highest voltage difference) more physically separated than possible in the prior art to minimize arcing.
- die coil is wound such that all winding layers of a single multi-turn are completed before proceeding to the next multi-turn.
- One variation relates to whether the winding starts at the lowest (inner-most or closest to the cylinder) winding layer for the first turn of a multi-turn or at the uppermost (outer-most or furthest from the cylinder) winding layer for the first turn of the multi-turn.
- crossover from a multi-turn to its adjacent multi-turn occurs at the same winding layer (e.g., the crossover is made from upper-most layer of multi-turn X to upper-most layer of multi-turn X+l, or the cross-over is made from lowest layer of multi-turn X to lowest layer of multi-turn X+l) or at a different winding layer (e.g., the cross-over is made from upper-most layer of multi-turn X to lowest layer of multi-turn X+l, or the cross-over is made from lowest layer of multi-turn X to upper-most layer of multi-turn X+l).
- a LULU (lower-upper-lower-upper) winding pattern is formed between the first two adjacent multi-turns in a two-layer coil.
- the pattern repeats for the next two multi-turns, and for the next two, and so forth.
- the LULU pattern involves first winding the coil close to the plasma cylinder (the lower layer, which is the "L” part of the LULU pattern). This represents the first "L” in the pattern "LULU”.
- the winding is done for the upper layer radially further away from the plasma cylinder in the same multi-turn. This represents the first "U” in the pattern "LULU".
- both individual turns or wraps of an L-U double-turn are located at the same distance dl with respect to the end 160 of the quartz cylinder.
- the coil is led to the lower layer of the adjacent multi-turn, again close to the plasma cylinder. This represents the second "L” in the pattern "LULU”.
- the winding is done for the upper layer radially further away from the plasma cylinder in the same adjacent multi-turn. This represents the second "U” in the pattern "LULU”.
- These two windings (lower layer, then upper layer) form the second double-turn.
- the second double-turn is located at a sufficiently different distance d2 (measured with respect to the end 160 of the quartz cylinder) to minimize cross talk with L-U pair 1 at distance dl .
- the third double-turn and fourth double-turn proceed similarly.
- L 1 U 11 U 12 L 2 U 21 U 22 for example, where the designation Li represents the lowest layer that is closest to the cylinder for the first triple turn, the designation U 11 denotes the intermediate layer for the first triple turn and designation U 12 denotes the upper most layer that is radially the furthest away from the cylinder for the first triple turn. Analogously, the designation L 2 represents the lowest layer that is closest to the cylinder for the second triple turn, the
- designation U 21 denotes the intermediate layer for the second triple turn and designation U 22 denotes the upper most layer that is radially the furthest away from the cylinder for the second triple turn.
- the lower layer is wound first, and then the intermediate upper layer radially further out for the same triple turn is wound Afterward, the upper-most layer that is radially even further out is wound for the same triple turn. The coil is then led to the lower layer of the adjacent triple turn to repeat. If four layers are involved, the pattern becomes
- a LUUL (lower-upper-upper-lower) winding pattern is formed between the first two adjacent multi-turns in a two-layer coil.
- the pattern repeats for the next two multi-turns, and for the next two, and so forth.
- the LUUL pattern involves first winding the coil layer close to the plasma cylinder. This represents the first "L” in the pattern "LUUL”. Next, the winding is done for the upper layer radially further away from the plasma cylinder in the same multi-turn. This represents the first "U” in the pattern "LUUL". These two windings (lower layer, then upper layer) form the first multi-turn.
- the coil is crossed over to the upper layer of the adjacent multi-turn. This represents the second "U” in the pattern “LUUL”.
- the winding is done for the lower layer closer to the plasma cylinder in the same adjacent multi-turn. This represents the second "L” in the pattern "LUUL”.
- L 1 U 11 U 12 U 22 U 21 L 2 for the first pair of adjacent multi-turns, for example, where the designation L 1 represents the lowest layer that is closest to the cylinder for the first double turn, the designation U 11 denotes the intermediate layer for the first double turn and designation U 12 denotes the upper most layer that is radially the furthest away from the cylinder for the first double turn.
- the designation L 2 represents the lowest layer that is closest to the cylinder for the second double turn, the designation U 21 denotes the intermediate layer for the second double turn and designation U 22 denotes the upper most layer that is radially the furthest away from the cylinder for the second double turn.
- the lower layer is wound first, and then the intermediate upper layer radially further out for the same multi-turn is wound. Afterward, upper-most layer that is radially even further out is wound for the same multi-turn. The coil is then led to the upper-most layer of the adjacent multi-turn. Next, the intermediate upper layer of that adjacent multi-turn is wound. Next, the lower layer of that adjacent multi- turn is wound. If four layers are involved, the pattern becomes "L 1 U 11 U 12 U 13 U 23 U 22 U 21 L 2 ", for example. In this manner, any number of layers may be accommodated.
- the winding employs a continuous conductor and follows a single direction (i.e., either clock-wise or counter-clockwise) and proceeds until all winding layers of a single multi-turn is completed. Then the winding proceeds to the next multi- turn and completes all winding layers of the next multi-turn. Then the winding proceeds to the next multi-turn and so on. Multi-turns are added linearly in one direction along the linear length of the cylinder as adjacent multi-turns are added.
- the grounded end of the coil is at an outer-most winding.
- the high voltage end of the coil is at an outer-most winding.
- the coil is a tube-in-a-tube configuration in which a smaller tube is disposed inside a larger tube through the use of a double wall tube (with appropriate spacer structures in between).
- a cooling fluid (such as high-purity water or a similarly suitable cooling fluid) is injected into one tube (either the inner or outer tube) at one end of the coil, travels to the other end of the coil in the same tube, and is diverted into the other tube for returning to the original end of the coil. This configuration simplifies plumbing installation and maintenance.
- the coil end that is employed to inject and extract the cooling fluid is also the grounded coil end, tap water or other 'none high-purity' cooling fluids may be used for cooling since the cooling fluid is not introduced into or extracted from the high voltage coil end. Introducing or extracting the cooling fluid at the grounded side avoids KF current leakage to undesirable locations in the plasma torch device due to a residual conductivity of the cooling fluid.
- FIG. 2 A-2D show cut-away drawings of an example improved 2-layer coil that employs the ULLU winding pattern.
- U A and L A form the first multi-turn, and then L B and U B form the adjacent multi-turn.
- U A represents the upper (outer) layer of the first multi-turn.
- L A represents the lower (inner) layer of the first multi- turn.
- LB represents the lower (inner) layer of the second multi-turn.
- UB represents the upper (outer) layer of the second multi-turn.
- the sequence is U A L A L B U B .
- the coil is wound continuously clockwise (looking up from the bottom of the coil in the figure) in the direction of arrow 252 and proceeds in the direction of arrow 254 as additional multi-turns are added.
- Fig. 2B represents the continuation of the ULLU winding pattern of Fig. 2 A with the second multi-turn pair shown in more details. Again, U A and L A form the first multi-turn, and LB and U B form the adjacent multi-turn.
- Fig. 2C represents the continuation of the ULLU winding pattern of Figs. 2B and
- U A and L A form the first multi-turn
- L B and UB form the adjacent multi-turn
- Uc represents the upper (outer) layer of the third multi-turn
- L c represents the lower (inner) layer of the third multi-turn.
- the sequence is U A L A L B U B U C L C .
- Fig. 2D represents the continuation of the ULLU winding pattern of Figs. 2C, 2B, and 2A, with a fourth multi-turn added.
- U A and L A form the first multi-turn
- L B and UB form the adjacent multi-turn.
- Uc represents the upper (outer) layer of the third multi-turn.
- Lc represents the lower (inner) layer of the third multi-turn.
- L D represents the lower (inner) layer of the fourth multi-turn.
- U D represents the upper (outer) layer of the fourth multi-turn.
- the pattern is U A L A L B U B U C L C L D U D .
- the two ends of the coil are spatially separated such that they are at opposite ends of the coil linearly speaking (i.e., along the direction of arrow 254). This would not have been possible if the entire lower layer had been wound first, and then the winding had doubled back on top of the lower layer to form the upper layer (as was commonly done with transformer windings).
- the two ends of the coil are at 180-degree with respect to one another (as shown in Fig. 2D) to maximize spatial separation.
- embodiments of the invention effectively increase the number of turns without increasing the overall height of the coil (the height of the coil solenoid), which increases the inductance of the coil to effectively increase the induced voltage across the length of the coil while minimizing arcing.
- the induced voltage on the coil plasma may be more easily ignited and/or sustained with the same or lower RF driver frequency.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020137009843A KR101846598B1 (en) | 2010-10-20 | 2011-10-19 | Methods and apparatus for igniting and sustaining plasma |
| SG2013024419A SG189221A1 (en) | 2010-10-20 | 2011-10-19 | Methods and apparatus for igniting and sustaining plasma |
| CN201180050356.0A CN103168336B (en) | 2010-10-20 | 2011-10-19 | For lighting the method and apparatus with maintain plasma |
| JP2013535033A JP2014500577A (en) | 2010-10-20 | 2011-10-19 | Method and apparatus for igniting and maintaining a plasma |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/908,462 US8884178B2 (en) | 2010-10-20 | 2010-10-20 | Methods and apparatus for igniting and sustaining plasma |
| US12/908,462 | 2010-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012054579A1 true WO2012054579A1 (en) | 2012-04-26 |
Family
ID=45972074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2011/056853 Ceased WO2012054579A1 (en) | 2010-10-20 | 2011-10-19 | Methods and apparatus for igniting and sustaining plasma |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8884178B2 (en) |
| JP (1) | JP2014500577A (en) |
| KR (1) | KR101846598B1 (en) |
| CN (1) | CN103168336B (en) |
| SG (1) | SG189221A1 (en) |
| TW (1) | TWI571181B (en) |
| WO (1) | WO2012054579A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101657303B1 (en) * | 2015-05-22 | 2016-09-13 | 인투코어테크놀로지 주식회사 | Plasma Apparatus |
| KR102280380B1 (en) * | 2015-09-03 | 2021-07-22 | 인투코어테크놀로지 주식회사 | Inductively Coupled Plasma Apparatus |
| JP6821472B2 (en) * | 2016-09-30 | 2021-01-27 | 株式会社ダイヘン | Plasma generator |
| KR101932117B1 (en) * | 2017-08-11 | 2018-12-24 | 피에스케이 주식회사 | Substrate treating apparatus, substrate treating method and plasma generating unit |
| KR102309660B1 (en) * | 2019-11-21 | 2021-10-07 | 주식회사 유진테크 | Apparatus for processing substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2931850A (en) * | 1956-05-21 | 1960-04-05 | Gar Wood Ind Inc | Liquid-cooled welding cable |
| US3084299A (en) * | 1958-05-01 | 1963-04-02 | Gen Electric | Electric transformer |
| US3142809A (en) * | 1961-04-04 | 1964-07-28 | Andrew A Halacsy | Cooling arrangement for electrical apparatus having at least one multilayer winding |
| GB1114013A (en) * | 1966-03-16 | 1968-05-15 | Skoda Np | Improvements in or relating to transformers |
| US5476229A (en) * | 1992-07-17 | 1995-12-19 | Nippondenso Co., Ltd. | Annular multi layer coil assembly |
| US7631828B2 (en) * | 2005-03-11 | 2009-12-15 | Hitachi Cable, Ltd. | Level wound coil, method of manufacturing same, and package for same |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5987115U (en) * | 1982-12-01 | 1984-06-13 | 日本光電工業株式会社 | coil |
| DE3632340C2 (en) * | 1986-09-24 | 1998-01-15 | Leybold Ag | Inductively excited ion source |
| JPH04368800A (en) * | 1991-06-17 | 1992-12-21 | Nippon Steel Corp | High frequency plasma torch |
| US5650032A (en) * | 1995-06-06 | 1997-07-22 | International Business Machines Corporation | Apparatus for producing an inductive plasma for plasma processes |
| US6264812B1 (en) * | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
| US6440221B2 (en) * | 1996-05-13 | 2002-08-27 | Applied Materials, Inc. | Process chamber having improved temperature control |
| US6353206B1 (en) * | 1996-05-30 | 2002-03-05 | Applied Materials, Inc. | Plasma system with a balanced source |
| US6028285A (en) * | 1997-11-19 | 2000-02-22 | Board Of Regents, The University Of Texas System | High density plasma source for semiconductor processing |
| US6218640B1 (en) * | 1999-07-19 | 2001-04-17 | Timedomain Cvd, Inc. | Atmospheric pressure inductive plasma apparatus |
| US6474258B2 (en) * | 1999-03-26 | 2002-11-05 | Tokyo Electron Limited | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| JP2001011638A (en) * | 1999-06-23 | 2001-01-16 | Jeol Ltd | High frequency induction thermal plasma equipment |
| US6744213B2 (en) * | 1999-11-15 | 2004-06-01 | Lam Research Corporation | Antenna for producing uniform process rates |
| US6320320B1 (en) * | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
| JP3697250B2 (en) * | 2000-02-24 | 2005-09-21 | 三菱重工業株式会社 | Plasma processing apparatus and method for producing carbon coating-formed plastic container |
| WO2001065895A2 (en) * | 2000-03-01 | 2001-09-07 | Tokyo Electron Limited | Electrically controlled plasma uniformity in a high density plasma source |
| US6414648B1 (en) * | 2000-07-06 | 2002-07-02 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
| US6693253B2 (en) * | 2001-10-05 | 2004-02-17 | Universite De Sherbrooke | Multi-coil induction plasma torch for solid state power supply |
| US6876155B2 (en) * | 2002-12-31 | 2005-04-05 | Lam Research Corporation | Plasma processor apparatus and method, and antenna |
| KR100631828B1 (en) * | 2003-05-12 | 2006-10-04 | 재단법인서울대학교산학협력재단 | Integral inductively coupled plasma torch with cylindrical guide coil structure |
| JP2006216467A (en) * | 2005-02-04 | 2006-08-17 | Tokyo Institute Of Technology | Plasma torch |
| JP2006216903A (en) * | 2005-02-07 | 2006-08-17 | Hitachi High-Technologies Corp | Plasma processing equipment |
| JP4932857B2 (en) * | 2007-02-16 | 2012-05-16 | ラム リサーチ コーポレーション | Induction coil, plasma generator, and plasma generation method |
| JP2008311310A (en) * | 2007-06-12 | 2008-12-25 | Toshiba Corp | Semiconductor manufacturing equipment |
| JP5592098B2 (en) * | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
-
2010
- 2010-10-20 US US12/908,462 patent/US8884178B2/en not_active Expired - Fee Related
-
2011
- 2011-10-17 TW TW100137589A patent/TWI571181B/en active
- 2011-10-19 KR KR1020137009843A patent/KR101846598B1/en active Active
- 2011-10-19 CN CN201180050356.0A patent/CN103168336B/en active Active
- 2011-10-19 JP JP2013535033A patent/JP2014500577A/en active Pending
- 2011-10-19 WO PCT/US2011/056853 patent/WO2012054579A1/en not_active Ceased
- 2011-10-19 SG SG2013024419A patent/SG189221A1/en unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2931850A (en) * | 1956-05-21 | 1960-04-05 | Gar Wood Ind Inc | Liquid-cooled welding cable |
| US3084299A (en) * | 1958-05-01 | 1963-04-02 | Gen Electric | Electric transformer |
| US3142809A (en) * | 1961-04-04 | 1964-07-28 | Andrew A Halacsy | Cooling arrangement for electrical apparatus having at least one multilayer winding |
| GB1114013A (en) * | 1966-03-16 | 1968-05-15 | Skoda Np | Improvements in or relating to transformers |
| US5476229A (en) * | 1992-07-17 | 1995-12-19 | Nippondenso Co., Ltd. | Annular multi layer coil assembly |
| US7631828B2 (en) * | 2005-03-11 | 2009-12-15 | Hitachi Cable, Ltd. | Level wound coil, method of manufacturing same, and package for same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101846598B1 (en) | 2018-04-06 |
| JP2014500577A (en) | 2014-01-09 |
| TWI571181B (en) | 2017-02-11 |
| TW201225745A (en) | 2012-06-16 |
| CN103168336A (en) | 2013-06-19 |
| US20120097647A1 (en) | 2012-04-26 |
| SG189221A1 (en) | 2013-05-31 |
| US8884178B2 (en) | 2014-11-11 |
| KR20130139927A (en) | 2013-12-23 |
| CN103168336B (en) | 2016-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101429806B1 (en) | Multi-mode apparatus for generating plasma | |
| KR102293504B1 (en) | Plasma processing apparatus | |
| JP2023030090A (en) | Inductive coil structure and inductively coupled plasma generator | |
| KR101502305B1 (en) | Rf choke for gas delivery to an rf driven electrode in a plasma processing apparatus | |
| TWI623961B (en) | Plasma processing device and filter unit | |
| CN102076162B (en) | Plasma processing apparatus | |
| CN101437354B (en) | Plasma processing apparatus | |
| US8884178B2 (en) | Methods and apparatus for igniting and sustaining plasma | |
| JP4642046B2 (en) | Substrate processing equipment | |
| KR20150054767A (en) | Plasma processing device and filter unit | |
| JP6138581B2 (en) | Plasma processing equipment | |
| JP7412814B2 (en) | plasma generator | |
| JP6046628B2 (en) | Plasma generator | |
| CN1901772B (en) | Apparatus to treat a substrate | |
| KR100803794B1 (en) | Inductively coupled plasma source with plasma discharge tube embedded in magnetic core block | |
| KR20160049220A (en) | Fire chamber, plasma generator, plasma generating method | |
| JP2006286536A (en) | Plasma generation method, induction coupling type plasma source, and plasma treatment device | |
| KR20160049635A (en) | Transformer coupled plasma generator having first winding to ignite and sustain a plasma | |
| KR100743842B1 (en) | Plasma reactor with plasma chamber coupled to the flux channel | |
| KR100805558B1 (en) | Inductively Coupled Plasma Source with Multiple Discharge Tubes Coupled to a Magnetic Core | |
| KR20210111601A (en) | A plasma apparatus having the multiple matching coils | |
| KR20070104704A (en) | Inductively Coupled Plasma Source with Built-in Magnetic Core |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11835050 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 20137009843 Country of ref document: KR Kind code of ref document: A |
|
| ENP | Entry into the national phase |
Ref document number: 2013535033 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 11835050 Country of ref document: EP Kind code of ref document: A1 |