WO2012043764A1 - Adhesive composition, method for manufacturing semiconductor device, and semiconductor device - Google Patents
Adhesive composition, method for manufacturing semiconductor device, and semiconductor device Download PDFInfo
- Publication number
- WO2012043764A1 WO2012043764A1 PCT/JP2011/072462 JP2011072462W WO2012043764A1 WO 2012043764 A1 WO2012043764 A1 WO 2012043764A1 JP 2011072462 W JP2011072462 W JP 2011072462W WO 2012043764 A1 WO2012043764 A1 WO 2012043764A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive composition
- semiconductor device
- semiconductor
- connection
- bis
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 193
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 124
- 239000000853 adhesive Substances 0.000 title claims abstract description 123
- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000945 filler Substances 0.000 claims abstract description 64
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 51
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 22
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 125000004432 carbon atom Chemical group C* 0.000 claims description 25
- 230000004907 flux Effects 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 125000002947 alkylene group Chemical group 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000012190 activator Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 64
- 239000010408 film Substances 0.000 description 58
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 48
- -1 acrylic compound Chemical class 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 42
- 238000009413 insulation Methods 0.000 description 29
- 229910000679 solder Inorganic materials 0.000 description 28
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 21
- 229920001721 polyimide Polymers 0.000 description 21
- 239000000377 silicon dioxide Substances 0.000 description 21
- 239000003566 sealing material Substances 0.000 description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 13
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 12
- 150000001412 amines Chemical class 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- 150000004985 diamines Chemical class 0.000 description 11
- 239000009719 polyimide resin Substances 0.000 description 11
- 238000004381 surface treatment Methods 0.000 description 11
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 10
- 150000008065 acid anhydrides Chemical class 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 125000001424 substituent group Chemical group 0.000 description 7
- 239000002966 varnish Substances 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 239000011324 bead Substances 0.000 description 6
- 150000001735 carboxylic acids Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229920006287 phenoxy resin Polymers 0.000 description 5
- 239000013034 phenoxy resin Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000002788 crimping Methods 0.000 description 3
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000006798 ring closing metathesis reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 2
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- RJIQELZAIWFNTQ-UHFFFAOYSA-N 2-phenyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)N1.C1=CNC(C=2C=CC=CC=2)=N1 RJIQELZAIWFNTQ-UHFFFAOYSA-N 0.000 description 2
- UCCGHLMDDOUWAF-UHFFFAOYSA-N 2-phenylimidazole-1-carbonitrile Chemical compound N#CN1C=CN=C1C1=CC=CC=C1 UCCGHLMDDOUWAF-UHFFFAOYSA-N 0.000 description 2
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 2
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 2
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 2
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000009261 D 400 Substances 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VKOUCJUTMGHNOR-UHFFFAOYSA-N Diphenolic acid Chemical compound C=1C=C(O)C=CC=1C(CCC(O)=O)(C)C1=CC=C(O)C=C1 VKOUCJUTMGHNOR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 2
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000004643 cyanate ester Substances 0.000 description 2
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical group C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 150000003457 sulfones Chemical class 0.000 description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 125000005591 trimellitate group Chemical group 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- DQVXWCCLFKMJTQ-UHFFFAOYSA-N (4-methylphenoxy)boronic acid Chemical compound CC1=CC=C(OB(O)O)C=C1 DQVXWCCLFKMJTQ-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- PLQNDYUMLMVFCX-UHFFFAOYSA-N 1h-imidazol-2-ylmethanediol Chemical compound OC(O)C1=NC=CN1 PLQNDYUMLMVFCX-UHFFFAOYSA-N 0.000 description 1
- IXHBSOXJLNEOPY-UHFFFAOYSA-N 2'-anilino-6'-(n-ethyl-4-methylanilino)-3'-methylspiro[2-benzofuran-3,9'-xanthene]-1-one Chemical compound C=1C=C(C2(C3=CC=CC=C3C(=O)O2)C2=CC(NC=3C=CC=CC=3)=C(C)C=C2O2)C2=CC=1N(CC)C1=CC=C(C)C=C1 IXHBSOXJLNEOPY-UHFFFAOYSA-N 0.000 description 1
- SDWGBHZZXPDKDZ-UHFFFAOYSA-N 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=C(Cl)C(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O SDWGBHZZXPDKDZ-UHFFFAOYSA-N 0.000 description 1
- JZWGLBCZWLGCDT-UHFFFAOYSA-N 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid Chemical compound ClC1=CC(C(O)=O)=C2C(C(=O)O)=CC(Cl)=C(C(O)=O)C2=C1C(O)=O JZWGLBCZWLGCDT-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- ZMPZWXKBGSQATE-UHFFFAOYSA-N 3-(4-aminophenyl)sulfonylaniline Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=CC(N)=C1 ZMPZWXKBGSQATE-UHFFFAOYSA-N 0.000 description 1
- TYKLCAKICHXQNE-UHFFFAOYSA-N 3-[(2,3-dicarboxyphenyl)methyl]phthalic acid Chemical compound OC(=O)C1=CC=CC(CC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O TYKLCAKICHXQNE-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- DVXYMCJCMDTSQA-UHFFFAOYSA-N 3-[2-(3-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=CC(N)=CC=1C(C)(C)C1=CC=CC(N)=C1 DVXYMCJCMDTSQA-UHFFFAOYSA-N 0.000 description 1
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- XRAAFZNZEZFTCV-UHFFFAOYSA-N 3-[[3-aminopropyl(diphenyl)silyl]oxy-diphenylsilyl]propan-1-amine Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(CCCN)O[Si](CCCN)(C=1C=CC=CC=1)C1=CC=CC=C1 XRAAFZNZEZFTCV-UHFFFAOYSA-N 0.000 description 1
- ZWRBLCDTKAWRHT-UHFFFAOYSA-N 3-[[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)O[Si](C)(C)CCCN ZWRBLCDTKAWRHT-UHFFFAOYSA-N 0.000 description 1
- JKWTWAKSRCPWLP-UHFFFAOYSA-N 3-[[[3-aminopropyl(diphenyl)silyl]oxy-dimethylsilyl]oxy-diphenylsilyl]propan-1-amine Chemical compound C=1C=CC=CC=1[Si](CCCN)(C=1C=CC=CC=1)O[Si](C)(C)O[Si](CCCN)(C=1C=CC=CC=1)C1=CC=CC=C1 JKWTWAKSRCPWLP-UHFFFAOYSA-N 0.000 description 1
- DOVNOYLOWBNHKQ-UHFFFAOYSA-N 3-[[[3-aminopropyl(dipropyl)silyl]oxy-dipropylsilyl]oxy-dipropylsilyl]propan-1-amine Chemical compound NCCC[Si](CCC)(CCC)O[Si](CCC)(CCC)O[Si](CCC)(CCC)CCCN DOVNOYLOWBNHKQ-UHFFFAOYSA-N 0.000 description 1
- MGENSHRLAKPCSM-UHFFFAOYSA-N 3-methylcyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound CC1CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O MGENSHRLAKPCSM-UHFFFAOYSA-N 0.000 description 1
- JASHGAIOBWYPBI-UHFFFAOYSA-N 3a,4a,7a,7b-tetrahydrodifuro[5,4-a:5',4'-d]furan-1,3,5,7-tetrone Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C1O2 JASHGAIOBWYPBI-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- QGRZMPCVIHBQOE-UHFFFAOYSA-N 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)CC(C)=C2C(C(O)=O)C(C(O)=O)CC(C)=C21 QGRZMPCVIHBQOE-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- HNHQPIBXQALMMN-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)-dimethylsilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 HNHQPIBXQALMMN-UHFFFAOYSA-N 0.000 description 1
- MOCQGMXEHQTAEN-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)-diphenylsilyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1[Si](C=1C=C(C(C(O)=O)=CC=1)C(O)=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MOCQGMXEHQTAEN-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- IDLYVPNAAUXRPW-UHFFFAOYSA-N 4-[(4-aminobutyl-methoxy-methylsilyl)oxy-methoxy-methylsilyl]butan-1-amine Chemical compound NCCCC[Si](C)(OC)O[Si](C)(CCCCN)OC IDLYVPNAAUXRPW-UHFFFAOYSA-N 0.000 description 1
- IJJNNSUCZDJDLP-UHFFFAOYSA-N 4-[1-(3,4-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 IJJNNSUCZDJDLP-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- AJYDKROUZBIMLE-UHFFFAOYSA-N 4-[2-[2-[2-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=CC=C(OC=2C=CC(N)=CC=2)C=1C(C)(C)C1=CC=CC=C1OC1=CC=C(N)C=C1 AJYDKROUZBIMLE-UHFFFAOYSA-N 0.000 description 1
- HESXPOICBNWMPI-UHFFFAOYSA-N 4-[2-[4-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=C(C(C)(C)C=2C=CC(N)=CC=2)C=CC=1C(C)(C)C1=CC=C(N)C=C1 HESXPOICBNWMPI-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- MRTAEHMRKDVKMS-UHFFFAOYSA-N 4-[4-[4-(3,4-dicarboxyphenoxy)phenyl]sulfanylphenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC(C=C1)=CC=C1SC(C=C1)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 MRTAEHMRKDVKMS-UHFFFAOYSA-N 0.000 description 1
- AXFZHOJOXNHNDY-UHFFFAOYSA-N 4-[[4-[(3,4-dicarboxyphenyl)-dimethylsilyl]phenyl]-dimethylsilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(C)C(C=C1)=CC=C1[Si](C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AXFZHOJOXNHNDY-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- MHQAJTTYAPWHHM-UHFFFAOYSA-N 4-[[[(4-aminophenyl)-dimethylsilyl]oxy-dimethylsilyl]oxy-dimethylsilyl]aniline Chemical compound C=1C=C(N)C=CC=1[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C1=CC=C(N)C=C1 MHQAJTTYAPWHHM-UHFFFAOYSA-N 0.000 description 1
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 241000269333 Caudata Species 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- JBQALRVYVWZCPM-UHFFFAOYSA-N NCCC[SiH2]O[SiH2]O[SiH2]CCCN Chemical compound NCCC[SiH2]O[SiH2]O[SiH2]CCCN JBQALRVYVWZCPM-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- SPMWUCYYMHVNFU-UHFFFAOYSA-N [O-]B([O-])Oc1ccc(F)cc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1 Chemical compound [O-]B([O-])Oc1ccc(F)cc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1 SPMWUCYYMHVNFU-UHFFFAOYSA-N 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- JAZBEHYOTPTENJ-JLNKQSITSA-N all-cis-5,8,11,14,17-icosapentaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O JAZBEHYOTPTENJ-JLNKQSITSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- PLGBRGZNHLWMKD-UHFFFAOYSA-N bis[2-aminoethyl(dimethyl)silyl] dimethyl silicate Chemical compound NCC[Si](C)(C)O[Si](OC)(OC)O[Si](C)(C)CCN PLGBRGZNHLWMKD-UHFFFAOYSA-N 0.000 description 1
- AOMMCEXPXYKABF-UHFFFAOYSA-N bis[4-aminobutyl(dimethyl)silyl] dimethyl silicate Chemical compound NCCCC[Si](C)(C)O[Si](OC)(OC)O[Si](C)(C)CCCCN AOMMCEXPXYKABF-UHFFFAOYSA-N 0.000 description 1
- QCKVTJUJXXGBDQ-UHFFFAOYSA-N bis[4-aminobutyl(diphenyl)silyl] dimethyl silicate Chemical compound C=1C=CC=CC=1[Si](CCCCN)(C=1C=CC=CC=1)O[Si](OC)(OC)O[Si](CCCCN)(C=1C=CC=CC=1)C1=CC=CC=C1 QCKVTJUJXXGBDQ-UHFFFAOYSA-N 0.000 description 1
- OOJITEPTYTVULX-UHFFFAOYSA-N bis[5-aminopentyl(diphenyl)silyl] dimethyl silicate Chemical compound C=1C=CC=CC=1[Si](CCCCCN)(C=1C=CC=CC=1)O[Si](OC)(OC)O[Si](CCCCCN)(C=1C=CC=CC=1)C1=CC=CC=C1 OOJITEPTYTVULX-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical group C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229960005135 eicosapentaenoic acid Drugs 0.000 description 1
- JAZBEHYOTPTENJ-UHFFFAOYSA-N eicosapentaenoic acid Natural products CCC=CCC=CCC=CCC=CCC=CCCCC(O)=O JAZBEHYOTPTENJ-UHFFFAOYSA-N 0.000 description 1
- 235000020673 eicosapentaenoic acid Nutrition 0.000 description 1
- GBASTSRAHRGUAB-UHFFFAOYSA-N ethylenetetracarboxylic dianhydride Chemical compound O=C1OC(=O)C2=C1C(=O)OC2=O GBASTSRAHRGUAB-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- FLGPRDQFUUFZBL-UHFFFAOYSA-N formaldehyde;naphthalen-1-ol Chemical compound O=C.C1=CC=C2C(O)=CC=CC2=C1 FLGPRDQFUUFZBL-UHFFFAOYSA-N 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 description 1
- KADGVXXDDWDKBX-UHFFFAOYSA-N naphthalene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C21 KADGVXXDDWDKBX-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229960002969 oleic acid Drugs 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- JGGWKXMPICYBKC-UHFFFAOYSA-N phenanthrene-1,8,9,10-tetracarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=C(C(O)=O)C(C(O)=O)=C3C(C(=O)O)=CC=CC3=C21 JGGWKXMPICYBKC-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- JWHOQZUREKYPBY-UHFFFAOYSA-N rubonic acid Natural products CC1(C)CCC2(CCC3(C)C(=CCC4C5(C)CCC(=O)C(C)(C)C5CC(=O)C34C)C2C1)C(=O)O JWHOQZUREKYPBY-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05611—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05616—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
- H01L2224/1148—Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10335—Indium phosphide [InP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Definitions
- the present invention relates to an adhesive composition, a semiconductor device manufacturing method, and a semiconductor device.
- a COB (Chip On Board) type connection method that is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), and the like also corresponds to the FC connection method.
- the FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection parts (bumps and wirings) are formed on a semiconductor chip to connect the semiconductor chips (for example, patents). Reference 1).
- connection methods are stacked and multi-staged, such as a chip stack package, POP (Package On Package), TSV (Through-Silicon Via), etc.
- POP Package On Package
- TSV Through-Silicon Via
- Such stacking / multi-stage technology arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the two-dimensional arrangement technique.
- the TSV technology is effective for improving semiconductor performance, reducing noise, reducing the mounting area, and saving power, and is attracting attention as a next-generation semiconductor wiring technology.
- connection part solder, tin, gold, silver, copper, nickel and the like, and conductive materials including these plural types are also used.
- the metal used in the connection part may be oxidized on the surface and an oxide film may be formed, or impurities such as oxide may adhere to the surface, which may cause impurities on the connection surface of the connection part. . If such impurities remain, there is a concern that the connectivity / insulation reliability between the semiconductor chip and the substrate or between the two semiconductor chips is lowered, and the merit of employing the above-described connection method is impaired.
- a method for suppressing the generation of these impurities and improving the connectivity there is a method of pre-treating the surface of the substrate or the semiconductor chip before connection, such as a preflux used for OSP (Organic Solderability Preservatives) processing.
- a preflux used for OSP Organic Solderability Preservatives
- the method of giving a rust preventive agent is mentioned.
- the pre-flux and the rust preventive agent may remain and deteriorate after pretreatment, which may reduce the connectivity.
- connection part between the semiconductor chip and the substrate with a semiconductor sealing material (adhesive for semiconductor sealing)
- the connection part is sealed simultaneously with the connection between the semiconductor chip and the substrate or the semiconductor chip. It becomes possible to do. Therefore, oxidation of the metal used for the connection part and adhesion of impurities to the connection part can be suppressed, and the connection part can be protected from the external environment. Therefore, it is possible to effectively improve connectivity / insulation reliability, workability, and productivity.
- thermal stress derived from the difference in thermal expansion coefficient between the semiconductor chip and the substrate or between the semiconductor chips does not concentrate on the connection portion to cause connection failure. In order to do so, it is necessary to seal the gap between the semiconductor chip and the substrate with a semiconductor sealing material. In particular, components having different thermal expansion coefficients are often used between the semiconductor chip and the substrate, and it is required to improve the thermal shock resistance by sealing with a semiconductor sealing material.
- the above-described sealing methods using a semiconductor sealing material can be broadly divided into a capillary-flow method and a pre-applied method (see, for example, Patent Documents 2 to 6).
- the Capillary-Flow method is a method in which a liquid semiconductor sealing material is injected into the gap between the semiconductor chip and the substrate by capillary action after the semiconductor chip and the substrate are connected.
- the pre-applied method is a method of connecting a semiconductor chip and a substrate after supplying a semiconductor sealing material in the form of a paste or film to the semiconductor chip or substrate before connecting the semiconductor chip and the substrate.
- the gap between the semiconductor chip and the substrate is becoming narrower with the recent progress of miniaturization of semiconductor devices, and the Capillary-Flow method requires a long time for implantation and decreases productivity.
- the pre-applied method has become the mainstream as a method for manufacturing a package capable of high functionality, high integration, and high speed.
- the gap between the semiconductor chip and the substrate is sealed with the semiconductor sealing material at the same time as the connection by heating and pressurization, so the components contained in the semiconductor sealing material are selected in consideration of the connection conditions.
- metal bonding is used for connection between connection portions from the viewpoint of sufficiently ensuring connectivity and insulation reliability. Since metal bonding is a connection method using a high temperature (for example, 200 ° C. or higher), it is caused by volatile components remaining in the semiconductor sealing material and newly generated volatile components by decomposition of the components contained in the semiconductor sealing material.
- the semiconductor sealing material may foam. Thereby, bubbles called voids are generated, and the semiconductor sealing material is peeled off from the semiconductor chip and the substrate.
- connection failure such as breakage of the connection portion due to tearing of the connection bump connecting the connection portions occurs. Due to these reasons, there is a concern that the conventional semiconductor encapsulating material may deteriorate in connectivity and insulation reliability.
- the semiconductor sealing material does not have sufficient flux activity (removal effect of oxide film and impurities on the metal surface), the oxide film and impurities on the metal surface cannot be removed, and a good metal-metal junction is formed. In some cases, continuity cannot be ensured. Furthermore, if the insulation reliability of the semiconductor sealing material is low, it is difficult to cope with the narrow pitch of the connection portion, resulting in insulation failure. For these reasons, there is a concern that the conventional semiconductor encapsulating material may deteriorate in connectivity and insulation reliability.
- Semiconductor devices manufactured using a semiconductor sealing material are required to achieve a sufficient level in terms of reliability, more specifically, heat resistance, moisture resistance, and reflow resistance.
- heat resistance more specifically, heat resistance, moisture resistance, and reflow resistance.
- reflow resistance it is required to maintain a high adhesive strength that can suppress the peeling or breaking of the die bond layer (adhesive layer) at a reflow temperature of around 260 ° C.
- the present invention has been made in view of the above circumstances, and provides an adhesive composition capable of manufacturing a semiconductor device having excellent reflow resistance, connection reliability, and insulation reliability, and a semiconductor device using the adhesive composition
- An object of the present invention is to provide a manufacturing method and a semiconductor device.
- the present invention relates to a semiconductor device in which connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a connection portion in a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other.
- An adhesive composition containing an epoxy resin, a curing agent, and an acrylic surface-treated filler surface-treated with a compound having a group represented by the following general formula (1) A composition is provided.
- R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms
- R 2 represents an alkylene group having 1 to 30 carbon atoms.
- the present invention also provides a connection in a semiconductor device in which the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other, or a semiconductor device in which the connection portions of the plurality of semiconductor chips are electrically connected to each other.
- An adhesive composition for sealing a part which contains an epoxy resin, a curing agent, and a filler having a group represented by the following general formula (1).
- R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms
- R 2 represents an alkylene group having 1 to 30 carbon atoms.
- the adhesive composition of the present invention contains an epoxy resin and a curing agent, and further contains an acrylic surface treatment filler or a filler having a group represented by the general formula (1), thereby increasing the temperature (for example, high reflow resistance, connection reliability, and insulation reliability can be realized even when applied as an adhesive for semiconductor sealing in a flip chip connection method in which metal bonding is performed at 200 ° C. or higher.
- a silane coupling agent when included in a resin together with a filler that is not surface-treated, the filler surface is subjected to a silane coupling treatment, and fillers of various surface states are synthesized by substituents of the silane coupling agent. It is known that However, the volatility of the silane coupling agent is high, which causes voids in the manufacturing process of a semiconductor device having a process at a high temperature such as metal bonding that requires high-temperature connection. Similarly, when surface-treating a conventionally used filler, a highly volatile organic substance such as methanol may be generated, which causes a void.
- an insulating film called a solder resist is formed on a semiconductor substrate, and the solder resist often contains an acrylic material. Therefore, the present inventors include the above-mentioned acrylic surface treatment filler or a filler having a group represented by the above general formula (1), whereby the elastic modulus at high temperature and the adhesive strength after moisture absorption of the adhesive composition. It has been found that reflow resistance can be realized.
- the adhesive composition of the present invention the generation of a highly volatile substance is suppressed by using a surface-treated acrylic surface-treated filler or a filler having a group represented by the above general formula (1).
- the present inventors speculate that the acrylic compound can improve the connectivity with the substrate because of its excellent adhesion to the solder resist.
- the acrylic surface treatment filler or the filler having the group represented by the general formula (1) is difficult to lower the insulation reliability of the connection portion, and the thermal expansion coefficient and elastic modulus of the cured product of the adhesive composition are reduced.
- the present inventors presume that the connection reliability can be improved because it is difficult to lower.
- An acrylic surface-treated filler or a filler having a group represented by the above general formula (1) has excellent dispersibility in a resin component, and is a package (substrate-substrate) in a semiconductor device manufactured using the adhesive composition of the present invention.
- the strength of the end portion can be improved.
- the above-mentioned improvement in adhesive strength is not limited on the solder resist, but also appears between the semiconductor chips (SiO, SiN, etc.).
- the compound having a group represented by the general formula (1) is preferably a compound represented by the following general formula (2).
- R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms
- R 2 represents an alkylene group having 1 to 30 carbon atoms
- R 3 represents an alkyl group having 1 to 30 carbon atoms.
- the adhesive composition of the present invention can further improve reflow resistance, connection reliability and insulation reliability by containing a filler surface-treated with the compound represented by the general formula (2). .
- the adhesive composition of the present invention may further contain a polymer component having a weight average molecular weight of 10,000 or more from the viewpoint of improving the heat resistance and film forming property of the adhesive composition.
- the polymer component preferably has a weight average molecular weight of 30000 or more and a glass transition temperature of 100 ° C. or less.
- the adhesive composition of the present invention can further contain a flux activator to increase the flux activity and remove an oxide film and impurities on the metal surface of the connection portion to form a good metal-metal bond. it can.
- the adhesive composition of the present invention has a film shape. It is preferable that
- the present invention also provides a semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a semiconductor device in which respective connection portions of a plurality of semiconductor chips are electrically connected to each other. It is a method, Comprising: The manufacturing method of a semiconductor device provided with the process of sealing a connection part using said adhesive composition is provided.
- the method for manufacturing a semiconductor device of the present invention by using the adhesive composition, the reflow resistance, the connection reliability, and the insulation reliability of the semiconductor device can be improved.
- connection part contains at least one metal selected from the group consisting of gold, silver, copper, nickel, tin and lead as a main component, the electrical conductivity, thermal conductivity and connection reliability of the connection part are further improved. can do.
- the present invention also provides a semiconductor device obtained by the method for manufacturing a semiconductor device.
- the semiconductor device of the present invention is manufactured using the method for manufacturing a semiconductor device described above, the reflow resistance, connection reliability, and insulation reliability are sufficiently excellent.
- an adhesive composition excellent in reflow resistance, connection reliability, and insulation reliability a method for manufacturing a semiconductor device using the adhesive composition, and a semiconductor device.
- the adhesive composition (adhesive for semiconductor encapsulation) of the present embodiment is a semiconductor in which respective connection portions of a semiconductor chip and a printed circuit board (hereinafter simply referred to as “substrate” in some cases) are electrically connected to each other.
- the adhesive composition is optionally composed of a polymer component having a weight average molecular weight of 10,000 or more (hereinafter referred to as “(d) component”) or a flux activator (hereinafter referred to as “(e) component”. ").
- a polymer component having a weight average molecular weight of 10,000 or more hereinafter referred to as “(d) component”
- a flux activator hereinafter referred to as “(e) component”.
- Epoxy Resin Any epoxy resin can be used without particular limitation as long as it has two or more epoxy groups in the molecule.
- Specific examples of the component (a) include bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type and various polyfunctionalities.
- Epoxy resins can be used. These can be used alone or as a mixture of two or more.
- the thermal weight loss rate at 250 ° C. is 5% or less. It is preferable to use an epoxy resin. In the case of 300 ° C., it is preferable to use an epoxy resin having a thermal weight loss rate at 300 ° C. of 5% or less.
- (B) Component Curing Agent
- the (b) component include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, and a phosphine curing agent.
- the component contains a phenolic hydroxyl group, an acid anhydride, an amine or an imidazole, it exhibits a flux activity that suppresses the formation of an oxide film at the connection part, and improves connection reliability and insulation reliability. it can.
- each curing agent will be described.
- Phenolic resin-based curing agent The phenolic resin-based curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule.
- phenol novolak, cresol novolak, phenol aralkyl resin, cresol A naphthol formaldehyde polycondensate, a triphenylmethane type polyfunctional phenol, and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
- the equivalent ratio of the phenol resin curing agent to the component (a) is 0.3 to 1.5 from the viewpoint of good curability, adhesiveness and storage stability. It is preferably 0.4 to 1.0, more preferably 0.5 to 1.0.
- the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption is increased. It tends to be kept low and the insulation reliability improves.
- Acid anhydride curing agent examples include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis.
- Anhydro trimellitate can be used. These can be used alone or as a mixture of two or more.
- the equivalent ratio of the acid anhydride-based curing agent to the component (a) is 0.3 to 1. from the viewpoint of good curability, adhesiveness, and storage stability. 5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable.
- the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be improved.
- the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption rate is increased. It tends to be kept low and the insulation reliability improves.
- Amine-based curing agent for example, dicyandiamide can be used.
- the equivalent ratio of the amine curing agent to the component (a) is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesion and storage stability. 4-1.0 is more preferable, and 0.5-1.0 is still more preferable. If the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. If the equivalent ratio is 1.5 or less, excessive unreacted amine does not remain and the insulation reliability is improved. Tend to.
- Imidazole-based curing agent examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2, 4-Diamino-6- [2′-ethyl-4′-methylimidazolyl
- the content of the imidazole curing agent is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of component (a). If the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 20 parts by mass or less, the adhesive composition may be cured before the metal bond is formed. There is a tendency that poor connection is less likely to occur.
- (V) Phosphine curing agent examples include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate. Can be mentioned.
- the content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the component (a). If the content of the phosphine-based curing agent is 0.1 parts by mass or more, curability tends to be improved, and if it is 10 parts by mass or less, the adhesive composition may be cured before a metal bond is formed. There is a tendency that poor connection is less likely to occur.
- a phenol resin curing agent, an acid anhydride curing agent, and an amine curing agent can be used singly or as a mixture of two or more.
- the imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
- the adhesive composition contains a phenol resin curing agent, an acid anhydride curing agent or an amine curing agent as the component (b), it exhibits a flux activity for removing an oxide film and further improves connection reliability. Can do.
- a surface treatment is performed with a compound having a group represented by the above general formula (1). If it is a filler, there is no restriction
- R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms, and is preferably a hydrogen atom, a methyl group, or an ethyl group.
- R 2 represents an alkylene group having 1 to 30 carbon atoms, preferably an alkylene group having 1 to 15 carbon atoms. When the number of carbon atoms of R 2 exceeds 30, it tends to prevent the surface treatment of the filler.
- Whether the component (c) has a group represented by the general formula (1) on the filler surface can be confirmed, for example, by the following method.
- the adhesive composition of the present embodiment is heated, and the generated methanol is measured using gas chromatography (for example, product name “GC-17A” manufactured by SHIMADZU). From the amount of the methanol, it can be confirmed that it has a group represented by the general formula (1) present on the filler surface. In this case, the methanol amount of the adhesive composition not containing the component (C) is measured in the same manner as a reference.
- gas chromatography for example, product name “GC-17A” manufactured by SHIMADZU.
- Examples of the insulating inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Silica, alumina, titanium oxide, and boron nitride are preferable, and silica, alumina, and boron nitride are more preferable. preferable.
- Examples of whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride.
- Examples of the resin filler include polyurethane and polyimide. These fillers and whiskers can be used alone or as a mixture of two or more. The shape, particle size and blending amount of the filler are not particularly limited. Fine nanosilica may be used. Among these fillers, silica filler is preferable because of easy surface treatment and relatively good compatibility with the resin component.
- a filler surface-treated with the compound represented by the general formula (2) can be used as the component (c).
- silica filler surface-treated with an acrylic compound in which R 1 is a hydrogen atom silica filler surface-treated with a methacrylic compound in which R 1 is a methyl group, and R A silica filler surface-treated with an ethacryl compound in which 1 is an ethyl group can be used.
- R 1 is preferably a non-bulky group, and R 1 is a hydrogen atom or carbon.
- R 1 As the number of carbons in R 1 increases, the bulk increases. When the number of carbons exceeds 2, the reactivity tends to decrease. That is, as the component (c), a silica filler surface-treated with an acrylic compound, a methacrylic compound, or an ethacrylic compound can be used.
- R 2 represents an alkylene group having 1 to 30 carbon atoms, and is preferably an alkylene group having 1 to 15 carbon atoms because it has a small amount of volatile components.
- R 3 represents an alkyl group having 1 to 30 carbon atoms and can be appropriately selected depending on the ease of surface treatment. When the carbon number of R 3 is 30 or less, the filler tends to be surface treated.
- the shape and particle size of the component may be appropriately set according to the use of the adhesive composition, and are not particularly limited.
- the average particle diameter of component (C) is preferably 2 ⁇ m or less, and in packages where narrow pitch and narrow gap are advanced, avoiding a decrease in reliability due to trapping. Therefore, it is more preferably 1.5 ⁇ m or less, and particularly preferably 1.0 ⁇ m or less. Further, the lower limit is more preferably 0.005 ⁇ m or more, and particularly preferably 0.01 ⁇ m or less, from the viewpoint of handleability.
- the blending amount of component (c) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, based on the total solid content of the adhesive composition. If it is 5% by mass or more, the adhesive force tends to be strongly improved, and if it is 80% by mass or less, the viscosity is easily adjusted, the fluidity of the adhesive composition is lowered, and the filler bites into the connection part. It is difficult for trapping (trapping) to occur, and connection reliability tends to be improved.
- silane coupling agent is not surface-treated with the filler in advance and is added as a constituent component of the adhesive composition and the surface treatment is performed in the system, methanol or the like is generated, which causes foaming during a high-temperature process.
- Component (d) Polymer component having a weight average molecular weight of 10,000 or more
- component (d) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, poly Examples include ether sulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber.
- phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin are preferable, and phenoxy resin, polyimide resin, and acrylic rubber are more preferable.
- These components (d) can be used alone or as a mixture or copolymer of two or more. However, the (d) component does not include the epoxy resin as the (a) component.
- polymer components such as the phenoxy resin and polyimide resin described above, or synthesized components may be used.
- the polyimide resin can be obtained, for example, by subjecting tetracarboxylic dianhydride and diamine to a condensation reaction by a known method. More specifically, tetracarboxylic dianhydride and diamine are mixed in equimolar or nearly equimolar amounts in an organic solvent (the order of addition of each component is arbitrary), and the reaction temperature is 80 ° C. or lower, preferably 0 to The addition reaction may be set at 60 ° C.
- the tetracarboxylic dianhydride is preferably recrystallized and purified with acetic anhydride in order to suppress deterioration of various properties of the adhesive composition.
- polyamic acid which is a polyimide precursor
- the polyimide resin can be obtained by dehydrating and ring-closing the polyamic acid.
- the dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed or a chemical ring closure method using a dehydrating agent.
- the molecular weight of the polyamic acid can be adjusted by heating at 50 to 80 ° C. for depolymerization.
- the tetracarboxylic dianhydride used as a raw material for the polyimide resin is not particularly limited.
- a represents an integer of 2 to 20.
- the tetracarboxylic dianhydride represented by the above general formula (I) can be synthesized from trimellitic anhydride monochloride and the corresponding diol, specifically, 1,2- (ethylene) bis (trimellitate).
- Anhydride 1,3- (trimethylene) bis (trimellitic anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1, 6- (Hexamethylene) bis (trimellitic anhydride), 1,7- (heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) Bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride), 1,12- (dodecamethylene) Scan (trimellitate anhydride), 1,16 (hexamethylene decamethylene) bis (trimellitate an
- tetracarboxylic dianhydride a tetracarboxylic dianhydride represented by the above formula (II) is preferable in that it can provide excellent moisture resistance reliability.
- the said tetracarboxylic dianhydride can be used individually or in combination of 2 or more types.
- the content of the tetracarboxylic dianhydride represented by the above formula (II) is preferably 40 mol% or more, more preferably 50 mol% or more, and more preferably 70 mol% or more based on the total tetracarboxylic dianhydride. Further preferred. When the content is 40 mol% or more, there is a tendency to sufficiently ensure the effect of moisture resistance reliability due to the use of the tetracarboxylic dianhydride represented by the above formula (II).
- the diamine used as a raw material for the polyimide resin is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis ( 4-amino-3,5-diisopropylphenyl) methane, 3,3′-diaminodiphenyldifluoromethane, 3,4′-diaminodiphenyldifluoromethane, 4,4′-diaminodipheny
- Q 1 , Q 2 and Q 3 each independently represents an alkylene group having 1 to 10 carbon atoms, and b represents an integer of 1 to 80.
- Q 4 , Q 5 , Q 6 and Q 7 each independently represent an alkylene group having 1 to 10 carbon atoms, and c, d and e each independently represents an integer of 1 to 50.
- f represents an integer of 5 to 20.
- Q 8 and Q 13 each independently represent an alkylene group having 1 to 5 carbon atoms or a phenylene group which may have a substituent
- Q 9 , Q 10 , Q 11 and Q 12 are each Independently, it represents an alkyl group having 1 to 5 carbon atoms, a phenyl group or a phenoxy group
- g represents an integer of 1 to 5.
- the diamine represented by the above general formula (III), (IV) or (V) is preferable in that low stress property, low temperature laminating property and low temperature adhesiveness can be imparted, and has low water absorption and low water absorption.
- the diamine represented by the said general formula (VI) is preferable at the point which can provide.
- the content of the aliphatic ether diamine represented by the general formula (III) or (IV) is preferably 1 to 50 mol% of the total diamine, and the aliphatic diamine represented by the general formula (V)
- the content of is preferably 20 to 80 mol% of the total diamine, and the content of the siloxane diamine represented by the general formula (VI) is preferably 20 to 80 mol% of the total diamine.
- the content is within the above range, the effect of imparting low temperature laminating properties and low water absorption tends to increase.
- aliphatic ether diamine represented by the general formula (III) include aliphatic ether diamines represented by the following formulas (III-1) to (III-5).
- n represents an integer of 1 or more.
- the weight average molecular weight of the aliphatic ether diamine represented by the general formula (III-4) is preferably 350, 750, 1100 or 2100, for example.
- the weight average molecular weight of the aliphatic ether diamine represented by the general formula (III-5) is preferably 230, 400, or 2000, for example.
- the above general formula (IV), the following general formula (VII), (VIII) or (IX) is used in that low-temperature laminating properties and good adhesion to a substrate with an organic resist can be secured.
- the aliphatic ether diamine represented respectively is more preferable.
- h represents an integer of 2 to 80, more preferably 2 to 70.
- c, d and e represent an integer of 1 to 50, more preferably 2 to 40.
- j and k each independently represent an integer of 1 to 70.
- aliphatic ether diamine represented by the above general formula (VII) examples include Jeffamine D-230, D-400, D-2000, D-4000, and BASF manufactured by Sun Techno Chemical Co., Ltd. Polyether amines D-230, D-400 and D-2000 can be mentioned.
- Specific examples of the aliphatic ether diamine represented by the general formula (VIII) include Jeffamine ED manufactured by Sun Techno Chemical Co., Ltd. -600, ED-900, and ED-2001.
- Examples of the aliphatic ether diamine represented by the above formula (IX) examples include Jeffamine EDR-148 manufactured by Sun Techno Chemical Co., Ltd.
- Examples of the aliphatic diamine represented by the general formula (V) include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6- Diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane and 1,2-diaminocyclohexane Is mentioned. Among these, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane and 1,12-diaminododecane are preferable.
- siloxane diamine represented by the general formula (VI) when g in the general formula (VI) is 1, 1,1,3,3-tetramethyl-1,3-bis (4-amino) Phenyl) disiloxane, 1,1,3,3-tetraphenoxy-1,3-bis (4-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (2-amino) Ethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (2-amino) Ethyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-
- the above polyimide resins can be used alone or as a mixture of two or more.
- the glass transition temperature (Tg) of the component (d) is preferably 100 ° C. or less, more preferably 85 ° C. or less, from the viewpoint of excellent adhesiveness of the adhesive composition to the substrate or chip.
- Tg is 100 ° C. or less, bumps formed on the semiconductor chip, and unevenness such as electrodes and wiring patterns formed on the substrate can be easily embedded with the adhesive composition, and no voids remain without voids. Tends to be less likely to occur.
- the Tg is a Tg measured using a DSC (DSC-7 model manufactured by Perkin Elmer) under the conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and a measurement atmosphere: air.
- the weight average molecular weight of the component (d) is 10000 or more in terms of polystyrene, but preferably 30000 or more, more preferably 40000 or more, and even more preferably 50000 or more in order to exhibit good film formability alone.
- the weight average molecular weight is 10,000 or more, film formability and heat resistance tend to be improved.
- the weight average molecular weight means a weight average molecular weight when measured in terms of polystyrene using high performance liquid chromatography (for example, product name “C-R4A” manufactured by Shimadzu Corporation).
- the content of the component (d) is not particularly limited, but is preferably 1 to 500 parts by mass with respect to 100 parts by mass of the component (a), in order to maintain a good film shape, and 5 to 300 parts by mass. More preferred is 10 to 200 parts by mass.
- the content of the component (d) is 1 part by mass or more, there is a tendency that an effect of improving the film formability is easily obtained, and when it is 500 parts by mass or less, the curability of the adhesive composition is improved and the adhesive strength is increased. There is a tendency to improve.
- the adhesive composition of the present invention can contain a component (e), that is, a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities).
- a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities).
- the flux activator include nitrogen-containing compounds having lone pairs such as imidazoles and amines, carboxylic acids, phenols, and alcohols.
- carboxylic acids have a strong flux activity and react with the epoxy resin as the component (a) and are not present in a free state in the cured product of the adhesive composition, thereby preventing a decrease in insulation reliability. it can.
- carboxylic acids examples include ethanoic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, heptadecanoic acid, octadecanoic acid and the like.
- Fatty saturated carboxylic acids Fatty saturated carboxylic acids; oleic acid, linoleic acid, linolenic acid, arachidonic acid, docosahesaenoic acid, eicosapentaenoic acid, etc .; aliphatic unsaturated carboxylic acids; maleic acid, fumaric acid, oxalic acid, malonic acid, succinic acid, glutaric acid Aliphatic dicarboxylic acids such as adipic acid; fragrances such as benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, trimesic acid, hemimellitic acid, pyromellitic acid, pentanecarboxylic acid, melittic acid Group carboxylic acids.
- Examples of the carboxylic acid having a hydroxyl group include lactic acid, malic acid, citric acid, and salicylic acid.
- the aromatic carboxylic acid has an electron-withdrawing or electron-donating substituent
- an aromatic carboxylic acid in which the acidity of the carboxylic acid on the aromatic is changed by the substituent can also be used.
- the flux activity tends to improve as the acidity of the carboxylic acid increases, the insulation reliability may decrease if the acidity is too high.
- the electron-withdrawing substituent that increases the acidity of the carboxylic acid include a nitro group, a cyano group, a trifluoromethyl group, a halogen group, and a phenyl group.
- Examples of the electron-donating substituent that weakens the acidity of the carboxylic acid include a methyl group, an ethyl group, an isopropyl group, a tertiary butyl group, a dimethylamino group, and a trimethylamino group.
- the number and position of the substituents are not particularly limited as long as the flux activity and the insulation reliability are not lowered.
- a filler may be further blended.
- an insulating inorganic filler, whisker or resin filler can be used as the filler.
- the insulating inorganic filler, whisker, or resin filler the same material as the component (c) can be used.
- These fillers, whiskers, and resin fillers can be used alone or as a mixture of two or more.
- the shape, average particle diameter and content of the filler are not particularly limited.
- additives such as an antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trap agent may be blended in the adhesive composition of the present embodiment. You may use these individually by 1 type or in combination of 2 or more types. About these compounding quantities, what is necessary is just to adjust suitably so that the effect of each additive may express.
- the adhesive composition of this embodiment can be formed into a film.
- a method for producing a film adhesive using the adhesive composition of the present embodiment is shown below. First, the component (a), the component (b) and the component (c), and the component (d) or the component (e) added as necessary are added to an organic solvent, and mixed by stirring, kneading, etc. A resin varnish is prepared by dissolving or dispersing. Then, after applying the resin varnish on the base film subjected to the release treatment using a knife coater, roll coater or applicator, the organic solvent is removed by heating, whereby a film adhesive is applied on the base film. Is obtained.
- organic solvent used for preparing the resin varnish those having characteristics capable of uniformly dissolving or dispersing each component are preferable.
- dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether examples include toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate.
- These organic solvents can be used alone or in combination of two or more.
- Stir mixing and kneading at the time of preparing the resin varnish can be performed using, for example, a stirrer, a raking machine, a three roll, a ball mill, a bead mill, and a homodisper.
- the substrate film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when the organic solvent is volatilized.
- Polyolefin films such as polypropylene film and polymethylpentene film, polyethylene terephthalate film, polyethylene naphthalate Examples thereof include polyester films such as phthalate films, polyimide films, and polyetherimide films.
- the base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
- the drying conditions when the organic solvent is volatilized from the resin varnish applied to the base film is preferably set so that the organic solvent is sufficiently volatilized, specifically, 50 to 200 ° C. for 0.1 to 90 minutes. It is preferable to perform heating.
- the adhesive composition of the present embodiment can also be used by spin-coating directly on a wafer and drying it if necessary after separating the wafer from the viewpoint of improving workability.
- FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention.
- a semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 that face each other, and wirings 15 that are respectively disposed on mutually facing surfaces of the semiconductor chip 10 and the substrate 20.
- the connection bump 30 connects the semiconductor chip 10 and the wiring 15 of the substrate 20 to each other, and the adhesive composition 40 is filled in the gap between the semiconductor chip 10 and the substrate 20 without a gap.
- the semiconductor chip 10 and the substrate 20 are flip-chip connected by wiring 15 and connection bumps 30.
- the wiring 15 and the connection bump 30 are sealed with an adhesive composition 40 and are shielded from the external environment.
- the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 that face each other, a bump 32 that is disposed on a surface that faces the semiconductor chip 10 and the substrate 20, respectively, And an adhesive composition 40 filled in the gaps between the substrates 20 without any gaps.
- the semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other.
- the bumps 32 are sealed with the adhesive composition 40 and are blocked from the external environment.
- FIG. 2 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.
- the semiconductor device 300 is the same as the semiconductor device 100 except that two semiconductor chips 10 are flip-chip connected by wirings 15 and connection bumps 30.
- the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by the bumps 32.
- the semiconductor chip 10 is not particularly limited, and an elemental semiconductor composed of the same kind of element such as silicon or germanium, or a compound semiconductor such as gallium arsenide or indium phosphide can be used.
- the substrate 20 is not particularly limited as long as it is a circuit board, and an unnecessary portion of a metal film is etched on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like.
- Connections such as wiring 15 and bumps 32 are mainly composed of gold, silver, copper, and solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper). Nickel, tin, lead, etc., and may contain a plurality of metals.
- gold, silver, and copper are preferable, and silver and copper are more preferable from the viewpoint of providing a package with excellent electrical and thermal conductivity of the connection portion.
- silver, copper, and solder are preferable, copper and solder are more preferable, and solder is more preferable, based on being inexpensive. If an oxide film is formed on the surface of a metal at room temperature, the productivity may decrease or the cost may increase. From the viewpoint of suppressing the formation of the oxide film, gold, silver, copper and solder are preferable, and gold, silver Solder is more preferable, and gold and silver are more preferable.
- the surface of the wiring 15 and the bump 32 is mainly composed of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc.
- the metal layer may be formed by plating, for example. This metal layer may be composed of only a single component or may be composed of a plurality of components.
- the metal layer may have a structure in which a single layer or a plurality of metal layers are stacked.
- the semiconductor device of this embodiment may be formed by stacking a plurality of structures (packages) as shown in the semiconductor devices 100 to 400.
- the semiconductor devices 100 to 400 include gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel, etc. May be electrically connected to each other by a bump or wiring including
- FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention, which is a semiconductor device using the TSV technology.
- the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bumps 30, so that the semiconductor chip 10 and the interposer 50 are flip-chip connected. ing.
- the gap between the semiconductor chip 10 and the interposer 50 is filled with the adhesive composition 40 without a gap.
- the semiconductor chip 10 On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked via the wiring 15, the connection bumps 30, and the adhesive composition 40.
- the wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10.
- the penetration electrode 34 copper, aluminum, etc. can be used as a material of the penetration electrode 34.
- Such a TSV technology makes it possible to acquire a signal from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 10, the distance between the semiconductor chips 10 facing each other and between the semiconductor chip 10 and the interposer 50 can be shortened and flexible connection is possible.
- the adhesive composition of the present embodiment can be applied as an adhesive for semiconductor sealing between the semiconductor chips 10 facing each other or between the semiconductor chip 10 and the interposer 50 in such TSV technology.
- a semiconductor chip can be directly mounted on a motherboard without using an interposer.
- the adhesive composition of this embodiment can also be applied when such a semiconductor chip is directly mounted on a mother board.
- the adhesive composition of this embodiment can be applied also when sealing the space
- FIG. 4 is a process cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device of the present invention.
- solder resist 60 having openings at positions where connection bumps 30 are formed is formed on a substrate 20 having wirings 15.
- the solder resist 60 is not necessarily provided. However, by providing a solder resist on the substrate 20, it is possible to suppress the occurrence of a bridge between the wirings 15 and improve the connection reliability and insulation reliability.
- the solder resist 60 can be formed using, for example, commercially available solder resist ink for packages. Specific examples of commercially available solder resist ink for packaging include SR series (trade name, manufactured by Hitachi Chemical Co., Ltd.) and PSR4000-AUS series (trade name, manufactured by Taiyo Ink Manufacturing Co., Ltd.).
- connection bumps 30 are formed in the openings of the solder resist 60.
- a film-like adhesive composition hereinafter sometimes referred to as “film-like adhesive” 40 is formed on the substrate 20 on which the connection bumps 30 and the solder resist 60 are formed.
- the film adhesive 40 can be attached by a hot press, roll lamination, vacuum lamination, or the like. The supply area and thickness of the film adhesive 40 are appropriately set according to the size of the semiconductor chip 10 and the substrate 20 and the height of the connection bump 30.
- the wiring 15 and the connection bumps 30 of the semiconductor chip 10 are aligned using a connection device such as a flip chip bonder. Subsequently, the semiconductor chip 10 and the substrate 20 are pressure-bonded while being heated at a temperature equal to or higher than the melting point of the connection bump 30 to connect the semiconductor chip 10 and the substrate 20 as shown in FIG. The gap between the semiconductor chip 10 and the substrate 20 is sealed and filled with the adhesive 40. Thus, the semiconductor device 600 is obtained.
- the semiconductor device is temporarily fixed (in a state where the semiconductor adhesive is interposed), and heat-treated in a reflow furnace, thereby melting the connection bumps 30 and the semiconductor chip 10.
- the substrate 20 may be connected. Since it is not always necessary to form a metal joint at the temporary fixing stage, it can be crimped with a low load, in a short time, and at a low temperature as compared with the above-mentioned method of crimping while heating. Deterioration of the part can be suppressed.
- the heating temperature is preferably a temperature at which curing of the film adhesive proceeds, and more preferably a temperature at which the film adhesive is completely cured.
- the heating temperature and the heating time are appropriately set.
- the substrate 20 may be connected after the film adhesive 40 is attached to the semiconductor chip 10. Further, after the semiconductor chip 10 and the substrate 20 are connected by the wiring 15 and the connection bumps 30, the gap between the semiconductor chip 10 and the substrate 20 may be filled with a paste-like adhesive composition.
- the adhesive composition is supplied onto the semiconductor chip 10 by supplying the adhesive composition to a semiconductor wafer connected with a plurality of semiconductor chips 10 and then dicing into individual pieces.
- the obtained structure may be obtained.
- the adhesive composition is in a paste form, it is not particularly limited, but it is sufficient to embed wirings and bumps on the semiconductor chip 10 and make the thickness uniform by a coating method such as spin coating. In this case, since the supply amount of the resin becomes constant, productivity is improved and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
- the adhesive composition is in the form of a film, it is not particularly limited.
- the adhesive composition is in a film form so as to embed wirings and bumps on the semiconductor chip 10 by a sticking method such as heating press, roll lamination, and vacuum lamination. What is necessary is just to supply a resin composition. In this case, since the supply amount of the resin is constant, productivity is improved, and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
- connection load is set in consideration of variations in the number and height of the connection bumps 30, the amount of deformation of the wiring that receives the connection bumps 30 due to pressurization, or the bumps of the connection portions.
- the connection temperature is preferably such that the temperature of the connection portion is equal to or higher than the melting point of the connection bump 30, but may be any temperature at which metal connection of each connection portion (bump or wiring) is formed.
- the connection bump 30 is a solder bump, about 240 ° C. or higher is preferable.
- connection time at the time of connection varies depending on the constituent metal of the connection part, but a shorter time is preferable from the viewpoint of improving productivity.
- connection time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less.
- connection time is preferably 60 seconds or less.
- the adhesive composition of the present invention exhibits excellent reflow resistance, connection reliability, and insulation reliability even in flip chip connection portions having various package structures described above.
- Polyimide A A solvent (NMP) was removed from the obtained polyimide resin, and a solution obtained by dissolving in methyl ethyl ketone (MEK) so as to have a solid content of 50% by mass was designated as “polyimide A”.
- Polyimide A had a Tg of 30 ° C., a weight average molecular weight of 50,000, and an SP value (solubility parameter) of 10.2.
- Example 1 100 parts by weight of epoxy resin (EP1032), 7.5 parts by weight of curing agent (2PHZ), 175 parts by weight of filler (SM silica), 25 parts by weight of flux activator (diphenolic acid), and MEK solvent with a solid content of 60% by weight Add the same amount of beads with a diameter of 0.8 mm and beads with a diameter of 2.0 mm as the solid content, and stir for 30 minutes in a bead mill (Fritch Japan Co., Ltd., planetary pulverizer “P-7”). did. Next, 100 parts by mass (in terms of solid content) of polyimide A was added, and the mixture was again stirred for 30 minutes with a bead mill. Then, the beads used for stirring were removed by filtration to obtain a resin varnish.
- the resulting resin varnish was applied to a base film (trade name “Purex A53” manufactured by Teijin DuPont Films Ltd.) with a small precision coating device (manufactured by Yanai Seiki Co., Ltd.) Manufactured) and dried at 70 ° C. for 10 minutes to produce a film adhesive.
- a base film trade name “Purex A53” manufactured by Teijin DuPont Films Ltd.
- a small precision coating device manufactured by Yanai Seiki Co., Ltd.
- Example 2 to 3 and Comparative Examples 1 to 6 Except that the composition of the raw materials used was changed as shown in Table 1 below, film-like adhesives of Examples 2 to 3 and Comparative Examples 1 to 6 were produced in the same manner as Example 1.
- the film adhesive was cut into a predetermined size (length 37 mm ⁇ width 4 mm ⁇ thickness 0.13 mm), and cured in a clean oven (manufactured by ESPEC Corporation) at 180 ° C. for 3 hours.
- the elastic modulus at 260 ° C. which is the ultimate temperature of the reflow furnace at the time of evaluation of the reflow resistance, was measured using a viscoelasticity measuring device (trade name “RASII” manufactured by Rheometrics). The measurement was performed at a temperature range of ⁇ 30 to 270 ° C., a temperature increase rate of 5 ° C./min, and a measurement wavelength of 10 Hz.
- a film adhesive is cut out to a predetermined size (length 5 mm x width 5 mm x thickness 0.025 mm) and attached to a silicon chip (length 5 mm x width 5 mm x thickness 0.725 mm, oxide film coating) at 60 ° C.
- the produced film adhesive is cut out to a predetermined size (length 8 mm ⁇ width 8 mm ⁇ thickness 0.025 mm) and placed on a glass epoxy substrate (glass epoxy substrate: 420 ⁇ m thickness, copper wiring: 9 ⁇ m thickness, 80 ⁇ m pitch).
- Affixed semiconductor chip with solder bumps chip size: length 7mm x width 7mm x height 0.15mm, bump: copper pillar and solder, 80 ⁇ m pitch
- flip chip mounting device "FCB3" product name, manufactured by Panasonic
- connection resistance value of the obtained semiconductor device was measured using a multimeter (trade name “R6871E” manufactured by ADVANTEST) to evaluate whether initial conduction after mounting was possible.
- the case where the connection resistance value was 11 to 14 ⁇ was evaluated as “A”, and the connection resistance value other than that or the case where the connection value (Open) occurred and the resistance value was not displayed was evaluated as “B”. .
- the above-described semiconductor device is molded into a predetermined shape using a sealing material (trade name “CEL9700HF10K” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, and 90 seconds.
- the product was cured at 175 ° C. for 5 hours to obtain a package.
- the package was passed through an IR reflow oven (manufactured by FURUKAWA ELECTRIC, trade name “SALAMANDER”) after high-temperature moisture absorption under JEDEC level 2 conditions.
- the connectivity of the package after the reflow was evaluated by the same method as the evaluation of the initial connectivity described later, and the reflow resistance was evaluated. The case where there was no separation and the connection was good was designated as “A”, and the case where the separation or connection failure occurred and the resistance value was not displayed was designated as “B”.
- connection reliability (TCT resistance evaluation)>
- the above-described semiconductor device is molded into a predetermined shape using a sealing material (trade name “CEL9700HF10K” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, and 90 seconds.
- the product was cured at 175 ° C. for 5 hours to obtain a package.
- this package is left in a thermal cycle tester (manufactured by ETAC, THERMAL SHOCK CHAMBER NT1200), a current of 1 mA is applied, and 25 ° C. 2 minutes / ⁇ 55 ° C. 15 minutes / 25 ° C. 2 minutes / 125 ° C.
- connection resistance was measured by setting one minute at 25 ° C. for 2 minutes, and the change in the connection resistance after 1000 cycles was evaluated. The case where there was no significant change after 1000 cycles compared to the initial resistance value waveform was designated as “A”, and the case where a difference of 1 ⁇ or more occurred was designated as “B”.
- the produced film adhesive was cut out to a predetermined size (length 10 mm ⁇ width 5 mm ⁇ thickness 25 ⁇ m) and attached to a comb-type electrode substrate (wiring pitch: 0.05 mm) in which wiring copper wiring was formed on a polyimide substrate, As shown in FIG. 5, a sample in which the film adhesive 40 was laminated on the substrate 20 on which the comb-shaped electrode 90 was formed was produced. In FIG. 5, the film adhesive is not shown for convenience. Subsequently, the sample was cured by being held at 185 ° C. for 3 hours in a clean oven (manufactured by ESPEC Corporation).
- each sample was taken out and placed in an accelerated life test apparatus (trade name “PL-422R8”, manufactured by HIRAYAMA, condition: 130 ° C./85% relative humidity / 200 hours / 5 V applied), and the insulation resistance was measured. . Throughout 200 hours, the case where the insulation resistance was 10 8 ⁇ or more was evaluated as “A”, and the case where it was less than 10 8 ⁇ was evaluated as “B”.
- Table 1 shows the composition (unit: parts by mass) of the raw materials of the adhesive compositions of Examples and Comparative Examples, and Table 2 shows the results of each test.
- Examples 1 to 3 using the acrylic surface treatment filler had high adhesive strength at 260 ° C. after moisture absorption, and were excellent in all the characteristics of reflow resistance, TCT resistance and HAST resistance. .
- SYMBOLS 10 Semiconductor chip, 15 ... Wiring (connection part), 20 ... Board
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
本実施形態の接着剤組成物(半導体封止用接着剤)は、半導体チップ及び配線回路基板(以下、場合により単に「基板」という。)のそれぞれの接続部が互いに電気的に接続された半導体装置、又は、複数の半導体チップのそれぞれの接続部が互いに電気的に接続された半導体装置において接続部を封止する接着剤組成物であって、エポキシ樹脂(以下、場合により「(a)成分」という。)と、硬化剤(以下、場合により「(b)成分」という。)と、アクリル系表面処理フィラー又は上記一般式(1)で表される基を有するフィラー(以下、場合により「(c)成分」という。)とを含有する。また、接着剤組成物は、必要に応じて、重量平均分子量10000以上の高分子成分(以下、場合により「(d)成分」という。)又はフラックス活性剤(以下、場合により「(e)成分」という。)を含有する。以下、本実施形態の接着剤組成物を構成する各成分について説明する。 <Adhesive composition>
The adhesive composition (adhesive for semiconductor encapsulation) of the present embodiment is a semiconductor in which respective connection portions of a semiconductor chip and a printed circuit board (hereinafter simply referred to as “substrate” in some cases) are electrically connected to each other. An adhesive composition for sealing a connection part in a device or a semiconductor device in which each connection part of a plurality of semiconductor chips is electrically connected to each other, and an epoxy resin (hereinafter, “(a) component” ), A curing agent (hereinafter sometimes referred to as “component (b)”), and an acrylic surface treatment filler or a filler having a group represented by the above general formula (1) (hereinafter sometimes referred to as “ (C) component "). In addition, the adhesive composition is optionally composed of a polymer component having a weight average molecular weight of 10,000 or more (hereinafter referred to as “(d) component”) or a flux activator (hereinafter referred to as “(e) component”. "). Hereinafter, each component which comprises the adhesive composition of this embodiment is demonstrated.
エポキシ樹脂としては、分子内に2個以上のエポキシ基を有するものであれば特に制限なく用いることができる。(a)成分として、具体的には、ビスフェノールA型、ビスフェノールF型、ナフタレン型、フェノールノボラック型、クレゾールノボラック型、フェノールアラルキル型、ビフェニル型、トリフェニルメタン型、ジシクロペンタジエン型及び各種多官能エポキシ樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。 (A) Component: Epoxy Resin Any epoxy resin can be used without particular limitation as long as it has two or more epoxy groups in the molecule. Specific examples of the component (a) include bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type and various polyfunctionalities. Epoxy resins can be used. These can be used alone or as a mixture of two or more.
(b)成分としては、例えば、フェノール樹脂系硬化剤、酸無水物系硬化剤、アミン系硬化剤、イミダゾール系硬化剤及びホスフィン系硬化剤が挙げられる。(b)成分がフェノール性水酸基、酸無水物、アミン類又はイミダゾール類を含むと、接続部に酸化膜が生じることを抑制するフラックス活性を示し、接続信頼性・絶縁信頼性を向上させることができる。以下、各硬化剤について説明する。 (B) Component: Curing Agent Examples of the (b) component include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, and a phosphine curing agent. (B) When the component contains a phenolic hydroxyl group, an acid anhydride, an amine or an imidazole, it exhibits a flux activity that suppresses the formation of an oxide film at the connection part, and improves connection reliability and insulation reliability. it can. Hereinafter, each curing agent will be described.
フェノール樹脂系硬化剤としては、分子内に2個以上のフェノール性水酸基を有するものであれば特に制限はなく、例えば、フェノールノボラック、クレゾールノボラック、フェノールアラルキル樹脂、クレゾールナフトールホルムアルデヒド重縮合物、トリフェニルメタン型多官能フェノール及び各種多官能フェノール樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。 (I) Phenolic resin-based curing agent The phenolic resin-based curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule. For example, phenol novolak, cresol novolak, phenol aralkyl resin, cresol A naphthol formaldehyde polycondensate, a triphenylmethane type polyfunctional phenol, and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
酸無水物系硬化剤としては、例えば、メチルシクロヘキサンテトラカルボン酸二無水物、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物及びエチレングリコールビスアンヒドロトリメリテートを使用することができる。これらは単独で又は2種以上の混合物として使用することができる。 (Ii) Acid anhydride curing agent Examples of the acid anhydride curing agent include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis. Anhydro trimellitate can be used. These can be used alone or as a mixture of two or more.
アミン系硬化剤としては、例えばジシアンジアミドを使用することができる。 (Iii) Amine-based curing agent As the amine-based curing agent, for example, dicyandiamide can be used.
イミダゾール系硬化剤としては、例えば、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、1-ベンジル-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾール、1-シアノ-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾールトリメリテイト、1-シアノエチル-2-フェニルイミダゾリウムトリメリテイト、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-ウンデシルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-エチル-4’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加体、2-フェニルイミダゾールイソシアヌル酸付加体、2-フェニル-4,5-ジヒドロキシメチルイミダゾール、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール、及び、エポキシ樹脂とイミダゾール類の付加体が挙げられる。これらの中でも、優れた硬化性、保存安定性及び接続信頼性の観点から、1-シアノエチル-2-ウンデシルイミダゾール、1-シアノ-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾールトリメリテイト、1-シアノエチル-2-フェニルイミダゾリウムトリメリテイト、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-エチル-4’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加体、2-フェニルイミダゾールイソシアヌル酸付加体、2-フェニル-4,5-ジヒドロキシメチルイミダゾール及び2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾールが好ましい。これらは単独で又は2種以上を併用して用いることができる。また、これらをマイクロカプセル化した潜在性硬化剤としてもよい。 (Iv) Imidazole-based curing agent Examples of the imidazole-based curing agent include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2, 4-Diamino-6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s Triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5- Examples include dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. Among these, from the viewpoint of excellent curability, storage stability and connection reliability, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimelli Tate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2′-Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine Isocyanuric acid adducts, 2-phenylimidazole isocyanuric acid adducts, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl -4-Methyl-5-hydroxymethylimidazole is preferred. These can be used alone or in combination of two or more. Moreover, it is good also as a latent hardening | curing agent which encapsulated these.
ホスフィン系硬化剤としては、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラフェニルホスホニウムテトラ(4-メチルフェニル)ボレート及びテトラフェニルホスホニウム(4-フルオロフェニル)ボレートが挙げられる。 (V) Phosphine curing agent Examples of the phosphine curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate. Can be mentioned.
(c)成分としては、上記一般式(1)で表される基を有する化合物で表面処理されたフィラーであれば特に制限はなく、例えば絶縁性無機フィラー、ウィスカー及び樹脂フィラーを表面処理したものを用いることができる。すなわち、(c)成分としては、上記一般式(1)で表される基を有するフィラーを用いることができる。 Component (c): Acrylic surface treatment filler or filler having a group represented by the above general formula (1) (c) As a component, a surface treatment is performed with a compound having a group represented by the above general formula (1). If it is a filler, there is no restriction | limiting in particular, For example, what surface-treated the insulating inorganic filler, the whisker, and the resin filler can be used. That is, as the component (c), a filler having a group represented by the general formula (1) can be used.
(d)成分としては、例えば、フェノキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリカルボジイミド樹脂、シアネートエステル樹脂、アクリル樹脂、ポリエステル樹脂、ポリエチレン樹脂、ポリエーテルスルホン樹脂、ポリエーテルイミド樹脂、ポリビニルアセタール樹脂、ウレタン樹脂及びアクリルゴムが挙げられる。これらの中でも耐熱性及びフィルム形成性に優れる観点から、フェノキシ樹脂、ポリイミド樹脂、アクリルゴム、シアネートエステル樹脂及びポリカルボジイミド樹脂が好ましく、フェノキシ樹脂、ポリイミド樹脂及びアクリルゴムがより好ましい。これらの(d)成分は単独で又は2種以上の混合物や共重合体として使用することもできる。但し、(d)成分には、(a)成分であるエポキシ樹脂が含まれない。 Component (d): Polymer component having a weight average molecular weight of 10,000 or more Examples of component (d) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, poly Examples include ether sulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber. Among these, from the viewpoint of excellent heat resistance and film formability, phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin are preferable, and phenoxy resin, polyimide resin, and acrylic rubber are more preferable. These components (d) can be used alone or as a mixture or copolymer of two or more. However, the (d) component does not include the epoxy resin as the (a) component.
本発明の接着剤組成物には(e)成分、すなわち、フラックス活性(酸化物や不純物を除去する活性)を示す化合物であるフラックス活性剤を含有することができる。フラックス活性剤としては、イミダゾール類やアミン類のように非共有電子対を有する含窒素化合物、カルボン酸類、フェノール類及びアルコール類が挙げられる。 (E) Component: Flux Activator The adhesive composition of the present invention can contain a component (e), that is, a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities). . Examples of the flux activator include nitrogen-containing compounds having lone pairs such as imidazoles and amines, carboxylic acids, phenols, and alcohols.
本実施形態の接着剤組成物には、粘度や硬化物の物性を制御するため、及び、半導体チップ及び基板を接続した際のボイドの発生や吸湿率の上昇を抑制するために、(c)成分の他に更にフィラーを配合してもよい。 (Other ingredients)
In the adhesive composition of this embodiment, in order to control the viscosity and physical properties of the cured product, and to suppress the generation of voids and the increase in the moisture absorption rate when the semiconductor chip and the substrate are connected, (c) In addition to the components, a filler may be further blended.
本実施形態の半導体装置について、図1及び2を用いて以下説明する。図1は、本発明の半導体装置の一実施形態を示す模式断面図である。図1(a)に示すように、半導体装置100は、互いに対向する半導体チップ10及び基板(回路配線基板)20と、半導体チップ10及び基板20の互いに対向する面にそれぞれ配置された配線15と、半導体チップ10及び基板20の配線15を互いに接続する接続バンプ30と、半導体チップ10及び基板20間の空隙に隙間なく充填された接着剤組成物40とを有している。半導体チップ10及び基板20は、配線15及び接続バンプ30によりフリップチップ接続されている。配線15及び接続バンプ30は、接着剤組成物40により封止されており外部環境から遮断されている。 <Semiconductor device>
The semiconductor device of this embodiment will be described below with reference to FIGS. FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention. As shown in FIG. 1A, a
本実施形態の半導体装置の製造方法について、図4を用いて以下説明する。図4は、本発明の半導体装置の製造方法の一実施形態を模式的に示す工程断面図である。 <Method for Manufacturing Semiconductor Device>
A method for manufacturing the semiconductor device of this embodiment will be described below with reference to FIGS. FIG. 4 is a process cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device of the present invention.
温度計、攪拌機及び塩化カルシウム管を備えた300mLフラスコに、1,12-ジアミノドデカン2.10g(0.035モル)、ポリエーテルジアミン(BASF製、商品名「ED2000」、分子量:1923)17.31g(0.03モル)、1,3-ビス(3-アミノプロピル)テトラメチルジシロキサン(信越化学製、商品名「LP-7100」)2.61g(0.035モル)及びN-メチル-2-ピロリドン(関東化学製、以下「NMP」という)150gを仕込み攪拌した。上記ジアミンの溶解後、フラスコを氷浴中で冷却しながら、無水酢酸で再結晶精製した4,4’-(4,4’-イソプロピリデンジフェノキシ)ビス(フタル酸二無水物)(ALDRICH製、商品名「BPADA」)15.62g(0.10モル)を少量ずつ添加した。室温で8時間反応させたのち、キシレン100gを加え、窒素ガスを吹き込みながら180℃で加熱し、水と共にキシレンを共沸除去し、ポリイミド樹脂を得た。得られたポリイミド樹脂から溶媒(NMP)を除去し、メチルエチルケトン(MEK)に固形分50質量%となるように溶解したものを「ポリイミドA」とした。ポリイミドAのTgは30℃、重量平均分子量は50000、SP値(溶解度パラメーター)は10.2であった。 (Polyimide synthesis)
In a 300 mL flask equipped with a thermometer, a stirrer, and a calcium chloride tube, 2.12 g (0.035 mol) of 1,12-diaminododecane, polyether diamine (trade name “ED2000”, molecular weight: 1923) manufactured by BASF) 31 g (0.03 mol), 1,3-bis (3-aminopropyl) tetramethyldisiloxane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name “LP-7100”) 2.61 g (0.035 mol) and N-methyl- 150 g of 2-pyrrolidone (manufactured by Kanto Chemical Co., hereinafter referred to as “NMP”) was charged and stirred. After dissolution of the diamine, 4,4 ′-(4,4′-isopropylidenediphenoxy) bis (phthalic dianhydride) (ALDRICH made by recrystallization purification with acetic anhydride while cooling the flask in an ice bath , Trade name “BPADA”) 15.62 g (0.10 mol) was added in small portions. After reacting at room temperature for 8 hours, 100 g of xylene was added and heated at 180 ° C. while blowing nitrogen gas to azeotropically remove xylene together with water to obtain a polyimide resin. A solvent (NMP) was removed from the obtained polyimide resin, and a solution obtained by dissolving in methyl ethyl ketone (MEK) so as to have a solid content of 50% by mass was designated as “polyimide A”. Polyimide A had a Tg of 30 ° C., a weight average molecular weight of 50,000, and an SP value (solubility parameter) of 10.2.
(a)エポキシ樹脂
・トリフェノールメタン骨格含有多官能固形エポキシ(ジャパンエポキシレジン株式会社製、商品名「EP1032H60」、以下「EP1032」という。)
・ビスフェノールF型液状エポキシ(ジャパンエポキシレジン株式会社製、商品名「YL983U」、以下「YL983」という。)
・柔軟性エポキシ(ジャパンエポキシレジン株式会社製、商品名「YL7175」、以下「YL7175」という。)
(b)硬化剤
・2-フェニル-4,5-ジヒドロキシメチルイミダゾール(四国化成株式会社製、商品名「2PHZ-PW」、以下「2PHZ」いう。)
・2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加体(四国化成株式会社製、商品名「2MAOK-PW」、以下「2MAOK」という。)
(c)アクリル系表面処理フィラー又は上記一般式(1)で表される基を有するフィラー
・メタクリル表面処理シリカフィラー(株式会社アドマテックス製、商品名「SE2050-SMJ」、平均粒径0.5μm、以下「SMシリカ」という。)
・メタクリル表面処理ナノシリカフィラー(株式会社アドマテックス製、商品名「YA050C-SM」、以下「SMナノシリカ」という。)
(c’)その他のフィラー
・未処理のシリカフィラー(株式会社アドマテックス製、商品名「SE2050」、平均粒径0.5μm、以下、「未処理シリカ」という。)
・アミノシラン処理シリカフィラー(株式会社アドマテックス製、商品名「SE2050-SXJ」、平均粒径0.5μm、以下「SXシリカ」という。)
・エポキシシラン処理シリカフィラー(株式会社アドマテックス製、商品名「SE2050-SEJ」、平均粒径0.5μm、以下「SEシリカ」という。)
・フェニルシラン処理シリカフィラー(株式会社アドマテックス製、商品名「SE2050-SPJ」、平均粒径0.5μm、以下「SPシリカ」という。)
・フェニル表面処理ナノシリカフィラー(株式会社アドマテックス製、商品名「YA050C-SP」、平均粒径50nm、以下「SPナノシリカ」という。)
・有機フィラー(1)(三菱レイヨン製、商品名「W5500」、以下「W5500」という。)
・有機フィラー(2)(ロームアンドハースジャパン(株)社製、商品名「EXL-2655」、コアシェルタイプ有機微粒子、以下「EXL2655」という。)
(d)分子量10000以上の高分子成分
・フェノキシ樹脂(東都化成株式会社製、商品名「ZX1356」、Tg:約71℃、Mw:約63000、以下「ZX1356」という。)
・上述の通り合成したポリイミドA
(e)フラックス活性剤(フラックス剤)
・ジフェノール酸(東京化成株式会社製)
・アジピン酸(和光純薬工業株式会社製) The compounds used in each example and comparative example are as follows.
(A) Epoxy resin / polyfunctional solid epoxy containing triphenolmethane skeleton (manufactured by Japan Epoxy Resin Co., Ltd., trade name “EP1032H60”, hereinafter referred to as “EP1032”)
-Bisphenol F type liquid epoxy (manufactured by Japan Epoxy Resin Co., Ltd., trade name “YL983U”, hereinafter referred to as “YL983”)
Flexible epoxy (made by Japan Epoxy Resin Co., Ltd., trade name “YL7175”, hereinafter referred to as “YL7175”)
(B) Curing agent 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Kasei Co., Ltd., trade name “2PHZ-PW”, hereinafter referred to as “2PHZ”)
2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct (trade name “2MAOK-PW” manufactured by Shikoku Kasei Co., Ltd., hereinafter “2MAOK” Called.)
(C) Acrylic surface-treated filler or filler / methacrylic surface-treated silica filler having a group represented by the above general formula (1) (trade name “SE2050-SMJ” manufactured by Admatechs Co., Ltd., average particle size 0.5 μm) Hereafter referred to as “SM silica”)
Methacrylic surface-treated nanosilica filler (manufactured by Admatechs Co., Ltd., trade name “YA050C-SM”, hereinafter referred to as “SM nanosilica”)
(C ′) Other fillers / untreated silica filler (manufactured by Admatechs, trade name “SE2050”, average particle size 0.5 μm, hereinafter referred to as “untreated silica”)
Aminosilane-treated silica filler (manufactured by Admatechs Co., Ltd., trade name “SE2050-SXJ”, average particle size 0.5 μm, hereinafter referred to as “SX silica”)
Epoxy silane-treated silica filler (manufactured by Admatechs Co., Ltd., trade name “SE2050-SEJ”, average particle size 0.5 μm, hereinafter referred to as “SE silica”)
Phenylsilane-treated silica filler (manufactured by Admatechs Co., Ltd., trade name “SE2050-SPJ”, average particle size 0.5 μm, hereinafter referred to as “SP silica”)
Phenyl surface-treated nano silica filler (manufactured by Admatechs Co., Ltd., trade name “YA050C-SP”,
Organic filler (1) (Made by Mitsubishi Rayon, trade name “W5500”, hereinafter referred to as “W5500”)
Organic filler (2) (Rohm and Haas Japan Co., Ltd., trade name “EXL-2655”, core-shell type organic fine particles, hereinafter referred to as “EXL2655”)
(D) Polymer component / phenoxy resin having a molecular weight of 10,000 or more (trade name “ZX1356” manufactured by Tohto Kasei Co., Ltd., Tg: about 71 ° C., Mw: about 63000, hereinafter referred to as “ZX1356”)
・ Polyimide A synthesized as described above
(E) Flux activator (flux agent)
・ Diphenolic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)
・ Adipic acid (Wako Pure Chemical Industries, Ltd.)
(実施例1)
エポキシ樹脂(EP1032)100質量部、硬化剤(2PHZ)7.5質量部、フィラー(SMシリカ)175質量部、フラックス活性剤(ジフェノール酸)25質量部並びにMEK溶媒を固形分が60質量%になるように仕込み、直径0.8mmのビーズ及び直径2.0mmのビーズを固形分と同量加え、ビーズミル(フリッチュ・ジャパン株式会社、遊星型微粉砕機「P-7」)で30分間撹拌した。次いで、ポリイミドAを100質量部(固形分換算)加え、再度ビーズミルで30分間撹拌した後、撹拌に用いたビーズをろ過によって除去し、樹脂ワニスを得た。 <Preparation of film adhesive for semiconductor encapsulation>
Example 1
100 parts by weight of epoxy resin (EP1032), 7.5 parts by weight of curing agent (2PHZ), 175 parts by weight of filler (SM silica), 25 parts by weight of flux activator (diphenolic acid), and MEK solvent with a solid content of 60% by weight Add the same amount of beads with a diameter of 0.8 mm and beads with a diameter of 2.0 mm as the solid content, and stir for 30 minutes in a bead mill (Fritch Japan Co., Ltd., planetary pulverizer “P-7”). did. Next, 100 parts by mass (in terms of solid content) of polyimide A was added, and the mixture was again stirred for 30 minutes with a bead mill. Then, the beads used for stirring were removed by filtration to obtain a resin varnish.
使用した原材料の組成を下記の表1の通りに変更したことを除いては、実施例1と同様にして、実施例2~3及び比較例1~6のフィルム状接着剤を作製した。 (Examples 2 to 3 and Comparative Examples 1 to 6)
Except that the composition of the raw materials used was changed as shown in Table 1 below, film-like adhesives of Examples 2 to 3 and Comparative Examples 1 to 6 were produced in the same manner as Example 1.
フィルム状接着剤を所定のサイズ(縦37mm×横4mm×厚さ0.13mm)に切り抜き、クリーンオーブン(エスペック株式会社製)中、180℃で3時間保持して硬化した。硬化後、粘弾性測定装置(Rheometrics製、商品名「RASII」)を用いて、耐リフロー性の評価時のリフロー炉の到達温度である260℃における弾性率を測定した。測定は、温度範囲-30~270℃、昇温速度5℃/分、測定波長10Hzで行った。 <Measurement of elastic modulus at 260 ° C.>
The film adhesive was cut into a predetermined size (length 37 mm × width 4 mm × thickness 0.13 mm), and cured in a clean oven (manufactured by ESPEC Corporation) at 180 ° C. for 3 hours. After curing, the elastic modulus at 260 ° C., which is the ultimate temperature of the reflow furnace at the time of evaluation of the reflow resistance, was measured using a viscoelasticity measuring device (trade name “RASII” manufactured by Rheometrics). The measurement was performed at a temperature range of −30 to 270 ° C., a temperature increase rate of 5 ° C./min, and a measurement wavelength of 10 Hz.
フィルム状接着剤を所定のサイズ(縦5mm×横5mm×厚さ0.025mm)に切り抜き、シリコンチップ(縦5mm×横5mm×厚さ0.725mm、酸化膜コーティング)に60℃で貼付け、熱圧着試験機(日立化成テクノプラント株式会社製)を用いてソルダーレジスト(太陽インキ製、商品名「AUS308」)がコーティングされたガラスエポキシ基板(厚さ0.02mm)に圧着した(圧着条件:フィルム状接着剤の到達温度180℃/10秒間/0.5MPa。次いでフィルム状接着剤の到達温度245℃/10秒間/0.5MPa)。次に、クリーンオーブン(エスペック株式会社製)中でアフターキュアした(180℃/3時間)。その後、85℃、相対湿度60%の恒温恒湿器(エスペック株式会社製、商品名「PR-2KP」)に48時間放置し、取り出し後、260℃のホットプレート上で接着力測定装置(DAGE社製、万能型ボンドテスタDAGE4000型)を使い、基板からのツール高さ0.05mm、ツール速度0.05mm/秒の条件で測定した。 <Measurement of adhesive strength at 260 ° C. after moisture absorption>
A film adhesive is cut out to a predetermined size (length 5 mm x width 5 mm x thickness 0.025 mm) and attached to a silicon chip (length 5 mm x width 5 mm x thickness 0.725 mm, oxide film coating) at 60 ° C. Using a crimping tester (manufactured by Hitachi Chemical Technoplant Co., Ltd.), it was crimped to a glass epoxy substrate (thickness 0.02 mm) coated with a solder resist (made by Taiyo Ink, trade name “AUS308”) (crimping condition: film The ultimate temperature of the film adhesive is 180 ° C./10 seconds / 0.5 MPa, and the ultimate temperature of the film adhesive is 245 ° C./10 seconds / 0.5 MPa. Next, after-curing was performed in a clean oven (manufactured by ESPEC Corporation) (180 ° C./3 hours). Then, it is left for 48 hours in a constant temperature and humidity chamber (trade name “PR-2KP” manufactured by ESPEC CORP.) Having a relative humidity of 85 ° C. and 60% relative humidity, and after taking out, the adhesive force measuring device (DAGE) on a 260 ° C. hot plate. Using a universal bond tester, DAGE 4000, manufactured by the company, measurement was performed under the conditions of a tool height of 0.05 mm from the substrate and a tool speed of 0.05 mm / sec.
作製したフィルム状接着剤を所定のサイズ(縦8mm×横8mm×厚さ0.025mm)に切り抜いて、ガラスエポキシ基板(ガラスエポキシ基材:420μm厚、銅配線:9μm厚、80μmピッチ)上に貼付し、はんだバンプ付き半導体チップ(チップサイズ:縦7mm×横7mm×高さ0.15mm、バンプ:銅ピラー及びはんだ、80μmピッチ、)をフリップチップ実装装置「FCB3」(パナソニック製、商品名)で実装した(実装条件:フィルム状接着剤の到達温度180℃、10秒間、0.5MPa。次いで、フィルム状接着剤の到達温度245℃、10秒間、0.5MPa)。これにより、図4と同様に上記ガラスエポキシ基板と、はんだバンプ付き半導体チップとがデイジーチェーン接続された半導体装置を得た。 <Evaluation of initial connectivity>
The produced film adhesive is cut out to a predetermined size (length 8 mm × width 8 mm × thickness 0.025 mm) and placed on a glass epoxy substrate (glass epoxy substrate: 420 μm thickness, copper wiring: 9 μm thickness, 80 μm pitch). Affixed semiconductor chip with solder bumps (chip size: length 7mm x width 7mm x height 0.15mm, bump: copper pillar and solder, 80μm pitch) flip chip mounting device "FCB3" (product name, manufactured by Panasonic) (Mounting conditions: reaching temperature of film adhesive 180 ° C., 10 seconds, 0.5 MPa. Next, reaching temperature of film adhesive 245 ° C., 10 seconds, 0.5 MPa). As a result, a semiconductor device in which the glass epoxy substrate and the semiconductor chip with solder bumps were daisy chain connected as in FIG. 4 was obtained.
上述の半導体装置を封止材(日立化成工業株式会社製、商品名「CEL9700HF10K」)を用いて、180℃、6.75MPa、90秒間の条件で所定の形状にモールドし、クリーンオーブン(エスペック株式会社製)中、175℃で5時間硬化させてパッケージを得た。次に、このパッケージをJEDEC level 2条件で高温吸湿後、IRリフロー炉(FURUKAWA ELECTRIC製、商品名「SALAMANDER」)にパッケージを通過させた。リフロー後のパッケージの接続性を、後述の初期接続性の評価と同様の方法で評価し、耐リフロー性の評価とした。剥離がなく、接続良好な場合を「A」、剥離や接続不良が生じて抵抗値が表示されなかった場合を「B」とした。 <Evaluation of reflow resistance>
The above-described semiconductor device is molded into a predetermined shape using a sealing material (trade name “CEL9700HF10K” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, and 90 seconds. The product was cured at 175 ° C. for 5 hours to obtain a package. Next, the package was passed through an IR reflow oven (manufactured by FURUKAWA ELECTRIC, trade name “SALAMANDER”) after high-temperature moisture absorption under JEDEC level 2 conditions. The connectivity of the package after the reflow was evaluated by the same method as the evaluation of the initial connectivity described later, and the reflow resistance was evaluated. The case where there was no separation and the connection was good was designated as “A”, and the case where the separation or connection failure occurred and the resistance value was not displayed was designated as “B”.
上述の半導体装置を封止材(日立化成工業株式会社製、商品名「CEL9700HF10K」)を用いて、180℃、6.75MPa、90秒間の条件で所定の形状にモールドし、クリーンオーブン(エスペック株式会社製)中、175℃で5時間硬化させてパッケージを得た。次に、このパッケージを冷熱サイクル試験機(ETAC製、THERMAL SHOCK CHAMBER NT1200)内に放置し、1mAの電流を流し、25℃2分間/-55℃15分間/25℃2分間/125℃で15分間/25℃2分間を1サイクルとして接続抵抗を測定し、1000サイクル繰り返した後の接続抵抗の変化を評価した。初期の抵抗値波形と比べて1000サイクル後も大きな変化がなかった場合を「A」、1Ω以上の差が生じた場合を「B」とした。 <Evaluation of connection reliability (TCT resistance evaluation)>
The above-described semiconductor device is molded into a predetermined shape using a sealing material (trade name “CEL9700HF10K” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, and 90 seconds. The product was cured at 175 ° C. for 5 hours to obtain a package. Next, this package is left in a thermal cycle tester (manufactured by ETAC, THERMAL SHOCK CHAMBER NT1200), a current of 1 mA is applied, and 25 ° C. 2 minutes / −55 ° C. 15 minutes / 25 ° C. 2 minutes / 125 ° C. 15 The connection resistance was measured by setting one minute at 25 ° C. for 2 minutes, and the change in the connection resistance after 1000 cycles was evaluated. The case where there was no significant change after 1000 cycles compared to the initial resistance value waveform was designated as “A”, and the case where a difference of 1Ω or more occurred was designated as “B”.
作製したフィルム状接着剤を所定のサイズ(縦10mm×横5mm×厚さ25μm)に切り抜き、ポリイミド基板上に配線銅配線を形成した、くし型電極基板(配線ピッチ:0.05mm)に貼付け、図5に示すように、くし型電極90が形成された基板20上にフィルム状接着剤40が積層されたサンプルを作製した。なお、図5では、便宜上フィルム状接着剤の図示を省略した。続いて、サンプルをクリーンオーブン(エスペック株式会社製)中、185℃で3時間保持して硬化した。硬化後、各サンプルを取り出し、加速寿命試験装置(HIRAYAMA社製、商品名「PL-422R8」、条件:130℃/相対湿度85%/200時間/5V印加)に設置し、絶縁抵抗を測定した。200時間を通して、絶縁抵抗が108Ω以上である場合を「A」、108Ω未満である場合を「B」として評価した。 <Evaluation of insulation reliability (HAST resistance evaluation)>
The produced film adhesive was cut out to a predetermined size (
Claims (10)
- 半導体チップ及び配線回路基板のそれぞれの接続部が互いに電気的に接続された半導体装置、又は、複数の半導体チップのそれぞれの接続部が互いに電気的に接続された半導体装置において前記接続部を封止する接着剤組成物であって、
エポキシ樹脂と、硬化剤と、下記一般式(1)で表される基を有する化合物で表面処理されたアクリル系表面処理フィラーと、を含有する接着剤組成物。
An adhesive composition containing an epoxy resin, a curing agent, and an acrylic surface-treated filler surface-treated with a compound having a group represented by the following general formula (1).
- 前記化合物が、下記一般式(2)で表される化合物である、請求項1に記載の接着剤組成物。
- 半導体チップ及び配線回路基板のそれぞれの接続部が互いに電気的に接続された半導体装置、又は、複数の半導体チップのそれぞれの接続部が互いに電気的に接続された半導体装置において前記接続部を封止する接着剤組成物であって、
エポキシ樹脂と、硬化剤と、下記一般式(1)で表される基を有するフィラーと、を含有する接着剤組成物。
An adhesive composition containing an epoxy resin, a curing agent, and a filler having a group represented by the following general formula (1).
- 重量平均分子量が10000以上の高分子成分を更に含有する、請求項1~3のいずれか一項に記載の接着剤組成物。 The adhesive composition according to any one of claims 1 to 3, further comprising a polymer component having a weight average molecular weight of 10,000 or more.
- 前記高分子成分の重量平均分子量が30000以上であり、ガラス転移温度が100℃以下である、請求項4に記載の接着剤組成物。 The adhesive composition according to claim 4, wherein the polymer component has a weight average molecular weight of 30000 or more and a glass transition temperature of 100 ° C. or less.
- フラックス活性剤を更に含有する、請求項1~5のいずれか一項に記載の接着剤組成物。 The adhesive composition according to any one of claims 1 to 5, further comprising a flux activator.
- 形状がフィルム状である、請求項1~6のいずれか一項に記載の接着剤組成物。 The adhesive composition according to any one of claims 1 to 6, wherein the shape is a film.
- 半導体チップ及び配線回路基板のそれぞれの接続部が互いに電気的に接続された半導体装置、又は、複数の半導体チップのそれぞれの接続部が互いに電気的に接続された半導体装置の製造方法であって、
前記接続部を、請求項1~7のいずれか一項に記載の接着剤組成物を用いて封止する工程を備える、半導体装置の製造方法。 A semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a manufacturing method of a semiconductor device in which respective connection portions of a plurality of semiconductor chips are electrically connected to each other,
A method for manufacturing a semiconductor device, comprising a step of sealing the connecting portion with the adhesive composition according to any one of claims 1 to 7. - 前記接続部が主成分として金、銀、銅、ニッケル、スズ及び鉛からなる群より選ばれる少なくとも一種の金属を含有する、請求項8記載の製造方法。 The manufacturing method according to claim 8, wherein the connecting portion contains at least one metal selected from the group consisting of gold, silver, copper, nickel, tin and lead as a main component.
- 請求項8又は9に記載の製造方法によって得られる、半導体装置。 A semiconductor device obtained by the manufacturing method according to claim 8 or 9.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137029828A KR101728203B1 (en) | 2010-09-30 | 2011-09-29 | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device |
CN201180047053.3A CN103222040B (en) | 2010-09-30 | 2011-09-29 | The manufacture method of adhesive composite, semiconductor device and semiconductor device |
JP2012512163A JP5373192B2 (en) | 2010-09-30 | 2011-09-29 | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device |
KR1020137009904A KR101455951B1 (en) | 2010-09-30 | 2011-09-29 | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010221377 | 2010-09-30 | ||
JP2010-221377 | 2010-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012043764A1 true WO2012043764A1 (en) | 2012-04-05 |
Family
ID=45893201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/072462 WO2012043764A1 (en) | 2010-09-30 | 2011-09-29 | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5373192B2 (en) |
KR (2) | KR101455951B1 (en) |
CN (2) | CN103642441B (en) |
TW (2) | TW201414795A (en) |
WO (1) | WO2012043764A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013221121A (en) * | 2012-04-18 | 2013-10-28 | Mitsubishi Chemicals Corp | Coating solution of interlayer filler composition for three-dimensional multi-layer semiconductor device |
JP2013221122A (en) * | 2012-04-18 | 2013-10-28 | Mitsubishi Chemicals Corp | Interlayer filler composition for three-dimensional multi-layer semiconductor device and coating solution thereof |
JP2014065776A (en) * | 2012-09-25 | 2014-04-17 | Toray Ind Inc | Polyimide for semiconductor adhesion, polyimide resin composition, electronic component and power semiconductor device |
JP2015009166A (en) * | 2013-06-26 | 2015-01-19 | 日本ゼオン株式会社 | Manufacturing method for particle mixture, optical adhesive composition, and optical adhesive layer |
JP2015030745A (en) * | 2013-07-31 | 2015-02-16 | 住友ベークライト株式会社 | Resin composition, semiconductor device, multilayer circuit board, and electronic component |
JPWO2013161864A1 (en) * | 2012-04-26 | 2015-12-24 | 古河電気工業株式会社 | Composition for film adhesive and method for producing the same, film adhesive, semiconductor package using film adhesive, and method for producing the same |
KR20160019474A (en) | 2013-06-13 | 2016-02-19 | 도레이 카부시키가이샤 | Resin composition, resin sheet, and production method for semiconductor device |
WO2018235854A1 (en) * | 2017-06-21 | 2018-12-27 | 日立化成株式会社 | Adhesive for semiconductors, method for producing semiconductor device, and semiconductor device |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5373192B2 (en) * | 2010-09-30 | 2013-12-18 | 日立化成株式会社 | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device |
TWI554530B (en) * | 2012-10-08 | 2016-10-21 | 國立臺灣大學 | Polymer, gel electrolyte made of the polymer and the preparing method thereof |
JP2015129247A (en) * | 2014-01-09 | 2015-07-16 | 住友ベークライト株式会社 | Resin composition, adhesive film, adhesive sheet, dicing tape integrated adhesive sheet, back grind tape integrated adhesive sheet, dicing tape and back grind tape integrated adhesive sheet, and electronic device |
KR20170035909A (en) * | 2014-06-19 | 2017-03-31 | 알파 어셈블리 솔루션스 인크. | Engineered residue solder paste technology |
JP6555277B2 (en) * | 2014-12-05 | 2019-08-07 | 日立化成株式会社 | Adhesive for semiconductor, semiconductor device and manufacturing method thereof |
CN105081614B (en) * | 2015-09-07 | 2017-08-04 | 东莞市富默克化工有限公司 | A kind of pre- preserved material of OSP |
JP6477971B2 (en) * | 2016-05-09 | 2019-03-06 | 日立化成株式会社 | Manufacturing method of semiconductor device |
KR102538175B1 (en) | 2016-06-20 | 2023-06-01 | 삼성전자주식회사 | Semiconductor package |
JP2017038081A (en) * | 2016-10-27 | 2017-02-16 | 住友ベークライト株式会社 | Semiconductor device |
WO2018105125A1 (en) * | 2016-12-09 | 2018-06-14 | 日立化成株式会社 | Composition, adhesive, sintered body, joined body, and method for producing joined body |
KR102290957B1 (en) * | 2017-03-31 | 2021-08-20 | 주식회사 엘지에너지솔루션 | Binder composition for secondary battery, and electrode for secondary battery and lithium secondary battery comprising the same |
CN111372994B (en) * | 2017-11-27 | 2023-03-14 | 纳美仕有限公司 | Film-like semiconductor sealing material |
CN112771659A (en) * | 2018-10-02 | 2021-05-07 | 昭和电工材料株式会社 | Adhesive for semiconductor, method for manufacturing semiconductor device, and semiconductor device |
WO2022120715A1 (en) * | 2020-12-10 | 2022-06-16 | 深圳先进技术研究院 | Insulating adhesive film material, preparation method therefor and application thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005068258A (en) * | 2003-08-22 | 2005-03-17 | Denki Kagaku Kogyo Kk | Spherical alumina powder and its application |
WO2008032620A1 (en) * | 2006-09-13 | 2008-03-20 | Sumitomo Bakelite Co., Ltd. | Semiconductor device |
JP2008085264A (en) * | 2006-09-29 | 2008-04-10 | Sumitomo Bakelite Co Ltd | Semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005325210A (en) * | 2004-05-13 | 2005-11-24 | Nitto Denko Corp | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
JP2006193666A (en) * | 2005-01-14 | 2006-07-27 | Sumitomo Bakelite Co Ltd | Adhesive film for semiconductor, carrier material having adhesive film for semiconductor and semiconductor device |
CN101794638B (en) * | 2006-07-21 | 2012-06-06 | 日立化成工业株式会社 | Circuit connecting material, connecting structure for circuit parts and connecting method for circuit parts |
JP2008174624A (en) * | 2007-01-17 | 2008-07-31 | Admatechs Co Ltd | Surface-treated inorganic powder |
JP5309886B2 (en) * | 2007-10-22 | 2013-10-09 | 日立化成株式会社 | Film-like adhesive for semiconductor sealing, method for manufacturing semiconductor device, and semiconductor device |
JP5373192B2 (en) * | 2010-09-30 | 2013-12-18 | 日立化成株式会社 | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device |
-
2011
- 2011-09-29 JP JP2012512163A patent/JP5373192B2/en active Active
- 2011-09-29 KR KR1020137009904A patent/KR101455951B1/en active IP Right Grant
- 2011-09-29 KR KR1020137029828A patent/KR101728203B1/en active IP Right Grant
- 2011-09-29 CN CN201310636698.1A patent/CN103642441B/en active Active
- 2011-09-29 CN CN201180047053.3A patent/CN103222040B/en active Active
- 2011-09-29 WO PCT/JP2011/072462 patent/WO2012043764A1/en active Application Filing
- 2011-09-30 TW TW102143069A patent/TW201414795A/en unknown
- 2011-09-30 TW TW100135612A patent/TWI424038B/en active
-
2012
- 2012-03-22 JP JP2012065966A patent/JP2012149266A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005068258A (en) * | 2003-08-22 | 2005-03-17 | Denki Kagaku Kogyo Kk | Spherical alumina powder and its application |
WO2008032620A1 (en) * | 2006-09-13 | 2008-03-20 | Sumitomo Bakelite Co., Ltd. | Semiconductor device |
JP2008085264A (en) * | 2006-09-29 | 2008-04-10 | Sumitomo Bakelite Co Ltd | Semiconductor device |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013221121A (en) * | 2012-04-18 | 2013-10-28 | Mitsubishi Chemicals Corp | Coating solution of interlayer filler composition for three-dimensional multi-layer semiconductor device |
JP2013221122A (en) * | 2012-04-18 | 2013-10-28 | Mitsubishi Chemicals Corp | Interlayer filler composition for three-dimensional multi-layer semiconductor device and coating solution thereof |
JPWO2013161864A1 (en) * | 2012-04-26 | 2015-12-24 | 古河電気工業株式会社 | Composition for film adhesive and method for producing the same, film adhesive, semiconductor package using film adhesive, and method for producing the same |
JP2014065776A (en) * | 2012-09-25 | 2014-04-17 | Toray Ind Inc | Polyimide for semiconductor adhesion, polyimide resin composition, electronic component and power semiconductor device |
KR20160019474A (en) | 2013-06-13 | 2016-02-19 | 도레이 카부시키가이샤 | Resin composition, resin sheet, and production method for semiconductor device |
US9738763B2 (en) | 2013-06-13 | 2017-08-22 | Toray Industries, Inc. | Resin composition, resin sheet, and production method for semiconductor device |
JP2015009166A (en) * | 2013-06-26 | 2015-01-19 | 日本ゼオン株式会社 | Manufacturing method for particle mixture, optical adhesive composition, and optical adhesive layer |
JP2015030745A (en) * | 2013-07-31 | 2015-02-16 | 住友ベークライト株式会社 | Resin composition, semiconductor device, multilayer circuit board, and electronic component |
WO2018235854A1 (en) * | 2017-06-21 | 2018-12-27 | 日立化成株式会社 | Adhesive for semiconductors, method for producing semiconductor device, and semiconductor device |
JPWO2018235854A1 (en) * | 2017-06-21 | 2020-04-23 | 日立化成株式会社 | Semiconductor adhesive, semiconductor device manufacturing method, and semiconductor device |
JP7196841B2 (en) | 2017-06-21 | 2022-12-27 | 昭和電工マテリアルズ株式会社 | Adhesive for semiconductor, method for manufacturing semiconductor device, and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR101455951B1 (en) | 2014-10-28 |
JP5373192B2 (en) | 2013-12-18 |
KR101728203B1 (en) | 2017-04-18 |
TW201414795A (en) | 2014-04-16 |
KR20130143667A (en) | 2013-12-31 |
KR20130133762A (en) | 2013-12-09 |
JP2012149266A (en) | 2012-08-09 |
CN103642441A (en) | 2014-03-19 |
CN103642441B (en) | 2015-05-13 |
CN103222040A (en) | 2013-07-24 |
TWI424038B (en) | 2014-01-21 |
TW201229176A (en) | 2012-07-16 |
JPWO2012043764A1 (en) | 2014-02-24 |
CN103222040B (en) | 2015-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5373192B2 (en) | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device | |
JP5577640B2 (en) | Manufacturing method of semiconductor device | |
JP5569576B2 (en) | Film adhesive for semiconductor, method for manufacturing semiconductor device, and semiconductor device | |
JP5881931B2 (en) | Adhesive composition, semiconductor device manufacturing method using the same, and semiconductor device | |
JP5659946B2 (en) | Semiconductor sealing adhesive, method for manufacturing the same, and semiconductor device | |
JP2013173834A (en) | Adhesive for semiconductor, semiconductor device, and method for manufacturing the semiconductor device | |
JP5003855B2 (en) | Adhesive composition, method for manufacturing semiconductor device, and semiconductor device | |
JP5641067B2 (en) | Film adhesive for semiconductor encapsulation | |
JP5857462B2 (en) | Semiconductor sealing adhesive, semiconductor device manufacturing method, and semiconductor device | |
JP5881927B2 (en) | Semiconductor sealing adhesive, semiconductor sealing film adhesive, semiconductor device manufacturing method, and semiconductor device | |
JP5263050B2 (en) | Adhesive composition, semiconductor device manufacturing method using the same, and semiconductor device | |
JP5671778B2 (en) | Film-like adhesive for semiconductor sealing, semiconductor device and method for manufacturing the same | |
JP5397526B2 (en) | Manufacturing method of semiconductor device | |
JP5710099B2 (en) | Film sealing adhesive for semiconductor sealing, semiconductor device manufacturing method using the adhesive, and semiconductor device | |
JP2019165125A (en) | Film adhesive for semiconductor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2012512163 Country of ref document: JP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11829317 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20137009904 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11829317 Country of ref document: EP Kind code of ref document: A1 |