WO2012021880A3 - Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template - Google Patents

Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template Download PDF

Info

Publication number
WO2012021880A3
WO2012021880A3 PCT/US2011/047699 US2011047699W WO2012021880A3 WO 2012021880 A3 WO2012021880 A3 WO 2012021880A3 US 2011047699 W US2011047699 W US 2011047699W WO 2012021880 A3 WO2012021880 A3 WO 2012021880A3
Authority
WO
WIPO (PCT)
Prior art keywords
template
thin film
semiconductor substrates
film semiconductor
fabricating thin
Prior art date
Application number
PCT/US2011/047699
Other languages
French (fr)
Other versions
WO2012021880A2 (en
Inventor
Karl-Josef Kramer
Mehrdad M. Moslehi
David Xuan-Qi Wang
Subramanian Tamilmani
Sam Tone Tor
Rahim Kavari
Rafael Ricolcol
George Kamian
Joseph Leigh
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Priority to KR1020137005997A priority Critical patent/KR101289789B1/en
Publication of WO2012021880A2 publication Critical patent/WO2012021880A2/en
Publication of WO2012021880A3 publication Critical patent/WO2012021880A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.
PCT/US2011/047699 2010-08-13 2011-08-13 Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template WO2012021880A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020137005997A KR101289789B1 (en) 2010-08-13 2011-08-13 Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37379310P 2010-08-13 2010-08-13
US61/373,793 2010-08-13

Publications (2)

Publication Number Publication Date
WO2012021880A2 WO2012021880A2 (en) 2012-02-16
WO2012021880A3 true WO2012021880A3 (en) 2012-05-10

Family

ID=45568237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/047699 WO2012021880A2 (en) 2010-08-13 2011-08-13 Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template

Country Status (2)

Country Link
KR (1) KR101289789B1 (en)
WO (1) WO2012021880A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015516145A (en) * 2012-04-02 2015-06-08 ソレクセル、インコーポレイテッド High efficiency solar cell structure and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020073329A (en) * 1999-09-14 2002-09-23 매사츄세츠 인스티튜트 오브 테크놀러지 Fabrication of finely featured devices by liquid embossing
US20070077744A1 (en) * 2005-09-30 2007-04-05 Andreas Plossl Epitaxial substrate, method of making same and method of making a semiconductor chip
WO2010081858A2 (en) * 2009-01-14 2010-07-22 Institut Für Solarenergieforschung Gmbh Method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film having a direct semiconductor material
US20100203711A1 (en) * 2009-02-06 2010-08-12 Solexel, Inc. Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100047246A (en) * 2007-07-03 2010-05-07 마이크로링크 디바이시즈, 인크. Methods for fabricating thin film iii-v compound solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020073329A (en) * 1999-09-14 2002-09-23 매사츄세츠 인스티튜트 오브 테크놀러지 Fabrication of finely featured devices by liquid embossing
US20070077744A1 (en) * 2005-09-30 2007-04-05 Andreas Plossl Epitaxial substrate, method of making same and method of making a semiconductor chip
WO2010081858A2 (en) * 2009-01-14 2010-07-22 Institut Für Solarenergieforschung Gmbh Method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film having a direct semiconductor material
US20100203711A1 (en) * 2009-02-06 2010-08-12 Solexel, Inc. Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template

Also Published As

Publication number Publication date
KR101289789B1 (en) 2013-07-26
WO2012021880A2 (en) 2012-02-16
KR20130034058A (en) 2013-04-04

Similar Documents

Publication Publication Date Title
MY170119A (en) Porous silicon electro-etching system and method
WO2013022479A3 (en) High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
WO2011123670A3 (en) Method and apparatus for improved wafer singulation
GB2467934B (en) Photovoltaic cell
TW201614738A (en) Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
WO2010094048A3 (en) Solar cell absorber layer formed from equilibrium precursor(s)
WO2011133975A3 (en) Thin film solar cell with ceramic handling layer
EP2665089A4 (en) COMPOSITION FOR FORMING p-TYPE DIFFUSION LAYER, METHOD OF PRODUCING SILICON SUBSTRATE HAVING p-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING PHOTOVOLTAIC CELL , AND PHOTOVOLTAIC CELL
WO2012166974A3 (en) Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
EP2615634A4 (en) Method for cleaning silicon substrate, and method for producing solar cell
WO2011071937A3 (en) Method of cleaning and forming a negatively charged passivation layer over a doped region
MX2009009666A (en) Method for the production of a solar cell and solar cell produced using said method.
EP2595197A4 (en) Method for producing solar cell and film-producing device
WO2010024896A3 (en) Single-crystal nanowires and liquid junction solar cells
WO2011060764A3 (en) Emitter formation by means of a laser
WO2014072833A3 (en) Molybdenum substrates for cigs photovoltaic devices
WO2011100647A3 (en) Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing
WO2012177804A3 (en) IMPROVED CdTe DEVICES AND METHOD OF MANUFACTURING SAME
WO2012040013A3 (en) Photovoltaic device containing an n-type dopant source
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
JP2011135053A5 (en)
BR112012027611A2 (en) device and method for mechanically texturing a silicon wafer intended to comprise a photovoltaic cell and resulting silicon wafer
SG195154A1 (en) Method for producing gaas single crystal and gaas single crystal wafer
WO2010091247A3 (en) Negatively charged passivation layer in a photovoltaic cell
GB2504430A (en) Tandem solar cell with improved tunnel junction

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11817164

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20137005997

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 11817164

Country of ref document: EP

Kind code of ref document: A2