WO2011156977A1 - 多晶硅太阳能电池陷光绒面的制备方法 - Google Patents

多晶硅太阳能电池陷光绒面的制备方法 Download PDF

Info

Publication number
WO2011156977A1
WO2011156977A1 PCT/CN2010/074108 CN2010074108W WO2011156977A1 WO 2011156977 A1 WO2011156977 A1 WO 2011156977A1 CN 2010074108 W CN2010074108 W CN 2010074108W WO 2011156977 A1 WO2011156977 A1 WO 2011156977A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafer
solar cell
nanospheres
suede
polymer
Prior art date
Application number
PCT/CN2010/074108
Other languages
English (en)
French (fr)
Inventor
焦云峰
冯志强
黄强
Original Assignee
常州天合光能有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州天合光能有限公司 filed Critical 常州天合光能有限公司
Priority to PCT/CN2010/074108 priority Critical patent/WO2011156977A1/zh
Publication of WO2011156977A1 publication Critical patent/WO2011156977A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a flocking process of a polycrystalline silicon solar cell, in particular to a method for preparing a polycrystalline silicon solar cell trapped suede. Background technique
  • the wet surface acidizing technology is generally used to fabricate the surface suede structure of the battery.
  • the general surface reflectance of such a silicon wafer can be controlled at about 21%.
  • the external quantum efficiency of the solar cell is It is relatively low, and at the same time, the use of a large number of corrosive and toxic chemicals has also caused damage to the environment. Summary of the invention
  • the technical problem to be solved by the present invention is: In order to solve the above-mentioned shortcomings and deficiencies, a preparation of a polycrystalline silicon solar cell trapped suede surface capable of further reducing the surface reflectance of the silicon wafer, increasing the absorption of light, and improving the efficiency of the polycrystalline silicon cell is provided. method.
  • the technical solution adopted by the present invention to solve the technical problem thereof is as follows: A method for preparing a polycrystalline silicon solar cell trapped suede surface, forming a polymer nanosphere by a solution self-assembly method, and combining the polymer nanosphere with the surface of the silicon wafer, A monodisperse layer of polymer nanospheres is formed on the surface of the silicon wafer, and a monodisperse layer of the polymer nanosphere is used as a mask, and then reactive ion etching is performed to form a suede on the surface of the silicon wafer.
  • the polymer nanospheres are polyvinyl alcohol polymer nanospheres.
  • the polyvinyl alcohol polymer nanospheres were bonded to the surface of the silicon wafer by spin coating to form a monodisperse layer of polyvinyl alcohol polymer nanospheres on the surface of the silicon wafer.
  • the silicon wafer is placed in a reactive ion etching system containing fluoride ions and chloride ions for reaction.
  • the invention has the beneficial effects that the suede prepared by the invention can reduce the reflectance of the surface of the silicon wafer to less than 2%, increase the absorption of light, and can obtain higher performance than the conventional wet chemical corrosion suede technique.
  • the photoelectric conversion efficiency of the battery can reduce the environmental pollution caused by the texturing process, and is suitable for the industrial production of crystalline silicon solar cells. detailed description
  • Preparation method of polycrystalline silicon solar cell trapped suede surface surface pretreatment of silicon wafer, self-assembly of solution to prepare nanometer-scale polyvinyl alcohol polymer nanosphere, and coating of silicon wafer surface with polyvinyl alcohol polymer nanometer by spin coating method
  • the ball forms a monodisperse layer
  • the silicon wafer is placed in a reactive ion etching system containing fluoride ions and chloride ions to react, so that the surface of the silicon wafer forms a suede having a honeycomb morphology, and the residue on the surface of the silicon wafer is cleaned to form Finished product.
  • ultrasonic atomization spraying In addition to the spin coating method, ultrasonic atomization spraying, solution pulling and the like can also be used.
  • the solution for cleaning the residue on the surface of the silicon wafer was a hydrogen fluoride solution having a concentration of 10%.
  • the diameter of the polyvinyl alcohol polymer sphere was 200 nm to 500 nm, and the etching time was 5 min_10 min.
  • the polymer spheres include polypropylene alcohol, polyvinyl acetate and the like.
  • the surface of the silicon wafer produced by the method of the present invention has a honeycomb suede surface, which can reduce the reflectance of light to less than 2%, can increase the absorption of light, and improve the efficiency of the polycrystalline silicon battery.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Description

多晶硅太阳能电池陷光绒面的制备方法
技术领域
本发明涉及一种多晶硅太阳能电池的制绒工艺， 尤其是一种多晶硅太阳能 电池陷光绒面的制备方法。 背景技术
目前多晶太阳电池工业化生产中普遍采用湿法酸制绒技术制作电池表面绒 面结构， 这样的硅片的一般表面反射率能控制在 21 %左右， 在这种情况下太阳 电池的外量子效率就比较低， 同时因大量腐蚀性、 有毒化学品的使用也给环境 带来了破坏。 发明内容
本发明要解决的技术问题是： 为了解决上述存在的缺点和不足， 提供一种 能将硅片表面反射率进一步降低， 增加光的吸收， 提高多晶硅电池效率的多晶 硅太阳能电池陷光绒面的制备方法。
本发明解决其技术问题所采用的技术方案是： 一种多晶硅太阳能电池陷光 绒面的制备方法， 通过溶液自组装的方法形成高分子纳米球， 将高分子纳米球 与硅片表面结合， 在硅片表面形成高分子纳米球单分散层， 以高分子纳米球单 分散层为掩膜， 然后进行反应离子刻蚀， 在硅片表面形成绒面。
高分子纳米球为聚乙烯醇高分子纳米球。
采用旋涂法将聚乙烯醇高分子纳米球与硅片表面结合， 在硅片表面形成聚 乙烯醇高分子纳米球单分散层。 硅片置于含有氟离子和氯离子的反应离子刻蚀系统中进行反应。 本发明的有益效果是， 本发明制备的绒面可使硅片表面的反射率降低至 2% 以下， 增加光的吸收， 与传统的湿法化学腐蚀绒面技术相比， 能够获得更高的 电池光电转换效率， 同时可降低因制绒工艺而引起的环境污染， 适用于晶体硅 太阳电池工业化生产。 具体实施方式
多晶硅太阳能电池陷光绒面的制备方法， 对硅片进行表面预处理， 溶液自 组装制备纳米尺度的聚乙烯醇高分子纳米球， 采用旋涂法对硅片表面涂敷聚乙 烯醇高分子纳米球形成单分散层， 将硅片置于含有氟离子和氯离子的反应离子 刻蚀系统中进行反应， 使硅片表面形成具有蜂窝状形貌的绒面， 清洗硅片表面 的残余物， 形成成品。
除旋涂法外， 还可以用超声雾化喷涂、 溶液提拉法等方法。
清洗硅片表面的残余物的溶液为浓度 10 %的氟化氢溶液， 聚乙烯醇高分子 球的直径为 200nm-500nm， 腐蚀时间为 5min_10min。
高分子球除聚乙烯醇高分子纳米球外， 还有聚丙稀醇， 聚醋酸乙烯醇等。 本发明的方法制得的硅片表面具有蜂窝状绒面， 这样可使光的反射率降低 至 2 %以下， 可以增加光的吸收， 提高多晶硅电池的效率。

Claims

权 利 要 求 书
1、 一种多晶硅太阳能电池陷光绒面的制备方法， 其特征在于： 通过溶液自 组装的方法形成高分子纳米球， 将高分子纳米球与硅片表面结合， 在硅片表面 形成高分子纳米球单分散层， 以高分子纳米球单分散层为掩膜， 然后进行反应 离子刻蚀， 在硅片表面形成绒面。
2、 根据权利要求 1所述的多晶硅太阳能电池陷光绒面的制备方法， 其特征 在于： 所述的高分子纳米球为聚乙烯醇高分子纳米球。
3、 根据权利要求 2所述的多晶硅太阳能电池陷光绒面的制备方法， 其特征 在于： 采用旋涂法将聚乙烯醇高分子纳米球与硅片表面结合， 在硅片表面形成 聚乙烯醇高分子纳米球单分散层。
4、 根据权利要求 3所述的多晶硅太阳能电池陷光绒面的制备方法， 其特征 在于： 所述的硅片置于含有氟离子和氯离子的反应离子刻蚀系统中进行反应。
PCT/CN2010/074108 2010-06-19 2010-06-19 多晶硅太阳能电池陷光绒面的制备方法 WO2011156977A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/074108 WO2011156977A1 (zh) 2010-06-19 2010-06-19 多晶硅太阳能电池陷光绒面的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/074108 WO2011156977A1 (zh) 2010-06-19 2010-06-19 多晶硅太阳能电池陷光绒面的制备方法

Publications (1)

Publication Number Publication Date
WO2011156977A1 true WO2011156977A1 (zh) 2011-12-22

Family

ID=45347650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/074108 WO2011156977A1 (zh) 2010-06-19 2010-06-19 多晶硅太阳能电池陷光绒面的制备方法

Country Status (1)

Country Link
WO (1) WO2011156977A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103390696A (zh) * 2013-08-12 2013-11-13 江苏宇兆能源科技有限公司 太阳能电池表面结构的rie腐蚀工艺
CN104009116A (zh) * 2014-05-12 2014-08-27 奥特斯维能源（太仓）有限公司 金刚线切割多晶硅片的电池的制作方法
CN104051563A (zh) * 2013-03-14 2014-09-17 北京北方微电子基地设备工艺研究中心有限责任公司 太阳能电池的制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101299405A (zh) * 2008-06-16 2008-11-05 吉林大学 在基底表面构筑抗反射结构的方法
CN101308219A (zh) * 2008-06-27 2008-11-19 吉林大学 以单层纳米粒子为刻蚀阻挡层构筑抗反射微结构的方法
JP2009117503A (ja) * 2007-11-05 2009-05-28 Mitsubishi Electric Corp 基板の粗面化方法およびそれを用いた光起電力装置の製造方法
US7563722B2 (en) * 2004-03-05 2009-07-21 Applied Nanotech Holdings, Inc. Method of making a textured surface
US20090199898A1 (en) * 2008-02-13 2009-08-13 Younggu Do Solar cell and method of texturing solar cell
US20090325336A1 (en) * 2008-04-24 2009-12-31 Malcolm Abbott Methods for printing an ink on a textured wafer surface
CN101667619A (zh) * 2009-09-11 2010-03-10 南京大学 提高纳米硅/二氧化硅发光器件发光强度的方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563722B2 (en) * 2004-03-05 2009-07-21 Applied Nanotech Holdings, Inc. Method of making a textured surface
JP2009117503A (ja) * 2007-11-05 2009-05-28 Mitsubishi Electric Corp 基板の粗面化方法およびそれを用いた光起電力装置の製造方法
US20090199898A1 (en) * 2008-02-13 2009-08-13 Younggu Do Solar cell and method of texturing solar cell
US20090325336A1 (en) * 2008-04-24 2009-12-31 Malcolm Abbott Methods for printing an ink on a textured wafer surface
CN101299405A (zh) * 2008-06-16 2008-11-05 吉林大学 在基底表面构筑抗反射结构的方法
CN101308219A (zh) * 2008-06-27 2008-11-19 吉林大学 以单层纳米粒子为刻蚀阻挡层构筑抗反射微结构的方法
CN101667619A (zh) * 2009-09-11 2010-03-10 南京大学 提高纳米硅/二氧化硅发光器件发光强度的方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051563A (zh) * 2013-03-14 2014-09-17 北京北方微电子基地设备工艺研究中心有限责任公司 太阳能电池的制备方法
CN104051563B (zh) * 2013-03-14 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 太阳能电池的制备方法
CN103390696A (zh) * 2013-08-12 2013-11-13 江苏宇兆能源科技有限公司 太阳能电池表面结构的rie腐蚀工艺
CN104009116A (zh) * 2014-05-12 2014-08-27 奥特斯维能源（太仓）有限公司 金刚线切割多晶硅片的电池的制作方法

Similar Documents

Publication Publication Date Title
CN103219428B (zh) 一种晶体硅太阳能电池的绒面结构及其制备方法
TWI526522B (zh) Polycrystalline silicon wafer velvet additive, velveteen and its velvet method
WO2016019767A1 (zh) 用于刻蚀太阳能电池硅片的酸性制绒液、制绒方法、太阳能电池片及其制作方法
CN108054224B (zh) 一种晶体硅太阳能电池的绒面结构及其制备方法
CN102938431B (zh) 一种太阳电池的硅片清洗制绒方法
CN101800264B (zh) 一种晶体硅太阳能电池干法刻蚀制绒工艺
CN101937946B (zh) 一种太阳电池硅片的表面织构方法
CN108807569B (zh) 一种单晶电池片的表面微米纳米复合结构的制备方法
CN105070772B (zh) 在单晶硅表面制备均匀倒金字塔绒面的湿化学方法
CN105405755B (zh) 用于硅片金字塔制绒的酸性制绒液、制绒方法以及采用该制绒方法制绒而成的硅片
WO2015017956A1 (zh) 太阳电池用单晶硅片单面抛光方法
CN101805929A (zh) 一种多晶硅表面制绒方法
CN106229386B (zh) 一种银铜双金属mace法制备黑硅结构的方法
CN107910386A (zh) 晶体硅太阳电池的单面绒面制备方法
CN105133038B (zh) 具有高效纳米绒面结构的多晶硅的制备方法及其应用
CN104966762A (zh) 晶体硅太阳能电池绒面结构的制备方法
WO2011156977A1 (zh) 多晶硅太阳能电池陷光绒面的制备方法
CN103145113B (zh) 微纳结构氧化锌-碳复合球及其制备方法
CN102728289A (zh) 一种二氧化锡-二氧化钛核壳纳米结构的制备方法
Omer et al. Nano-texturing of silicon wafers via one-step copper-assisted chemical etching
CN104124286A (zh) 一种利用自生长贵金属等离基元纳米结构及其提高GaInP基太阳能电池光吸收的应用
CN106086921B (zh) 一种晶面诱导构筑Si/TiO2复合光阳极的制备方法
CN205194713U (zh) 一种用于太阳能电池的硅片
CN103346264A (zh) 一种纳米氧化锌薄膜的制备方法以及一种有机太阳能电池的制备方法
Ji et al. Improvement of the surface structure for the surface passivation of black silicon

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10853087

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10853087

Country of ref document: EP

Kind code of ref document: A1