WO2011155600A1 - 発振器 - Google Patents
発振器 Download PDFInfo
- Publication number
- WO2011155600A1 WO2011155600A1 PCT/JP2011/063369 JP2011063369W WO2011155600A1 WO 2011155600 A1 WO2011155600 A1 WO 2011155600A1 JP 2011063369 W JP2011063369 W JP 2011063369W WO 2011155600 A1 WO2011155600 A1 WO 2011155600A1
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- WIPO (PCT)
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- wiring pattern
- main surface
- vibrating piece
- oscillator
- terminal
- Prior art date
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
Definitions
- the present invention relates to an oscillator.
- Oscillators include those in which the vibration region of a piezoelectric vibrating piece that performs piezoelectric vibration is hermetically sealed, such as a crystal oscillator.
- Quartz oscillator is composed of a box-shaped base made of ceramic material and a single plate lid made of metal material. In the internal space of the package, the piezoelectric vibrating piece and the IC chip are held and joined to the base. Then, the piezoelectric resonator element and the IC chip in the internal space of the package are hermetically sealed by bonding the base and the lid (for example, see Patent Document 1).
- a base in which two box-shaped bodies formed by integrally firing ceramic materials are used is used.
- a piezoelectric vibrating piece is mounted on one box-shaped body of the base, and an IC chip is mounted on the other box-shaped body.
- the back surface (other main surface) of the base there are external terminals that are electrically connected to an external circuit board, and inspection terminals that measure and inspect the characteristics of the crystal vibrating piece along the outer periphery of the other main surface. Is formed.
- an object of the present invention is to provide an oscillator having a reduced height.
- an oscillator includes a pair of electrode pads that electrically connect a piezoelectric vibrating piece that performs piezoelectric vibration to a sealing member, and an integrated circuit that forms an oscillation circuit together with the piezoelectric vibrating piece.
- the wiring pattern Includes at least an output wiring pattern for conducting one of the connection pads to the AC output terminal of the oscillation circuit, and a power supply wiring pattern for conducting one of the connection pads to the DC power supply terminal of the oscillation circuit.
- the electrode pad and the connection pad are formed on one main surface of the base material constituting the sealing member, and the wiring pattern forms the base material constituting the sealing member. Is formed on at least one major surface, on said one main surface, the electrode pads, rather than the output wiring pattern, characterized in that arranged in the vicinity of the power supply wiring pattern.
- the wiring pattern includes at least the output wiring pattern and the power supply wiring pattern, and the electrode pad and the connection pad are formed on one main surface of the base material constituting the sealing member. And the wiring pattern is formed on at least one main surface of a base material constituting the sealing member, and the electrode pad is located on the main surface rather than the output wiring pattern. Since the piezoelectric vibrating reed and the integrated circuit element are arranged side by side in a plan view, it is possible to cope with a reduction in the height of the oscillator. It becomes possible to cope with a low profile.
- the electrode pad that electrically connects the piezoelectric vibrating piece from the output wiring pattern through which alternating current or high-frequency signals flow (specifically, the piezoelectric vibrating piece that is electrically connected to the electrode pad). It is possible to suppress the influence of unnecessary radiation generated from the output wiring pattern from reaching the piezoelectric vibrating piece electrically connected to the electrode pad.
- the electrode pad specifically, the piezoelectric vibrating piece electrically connected to the electrode pad
- the electrode pad is connected from the output wiring pattern as in the present invention. By separating, it is possible to suppress the influence of unnecessary radiation (radiation noise) generated from the output wiring pattern on the piezoelectric vibrating piece.
- the electrode pad (specifically, the piezoelectric vibrating piece electrically connected to the electrode pad) is separated from the output wiring pattern. Problems due to the interaction can be suppressed.
- a pair of excitation electrodes formed on both main surfaces of the piezoelectric vibrating piece is sputtered, or a weight is attached by vapor deposition to adjust the frequency of the piezoelectric vibrating piece.
- a piece of the exciting electrode scattered from the exciting electrode by sputtering or a material for a weight may adhere to the output wiring pattern through which an alternating current or a high frequency signal flows.
- the surface resistance of the wiring pattern is lowered, and a defect such as a short circuit occurs on the wiring pattern.
- the electrode pad is arranged closer to the power supply wiring pattern than the output wiring pattern. Therefore, when a piezoelectric vibrating piece is electrically connected to the electrode pad, the piezoelectric vibrating piece is disposed on the bottom surface of the cavity away from the output wiring pattern and close to the power supply wiring pattern. It is hard to cause a malfunction.
- an oscillator includes a pair of electrode pads that electrically connect a piezoelectric vibrating piece that performs piezoelectric vibration to a sealing member, and an oscillation circuit together with the piezoelectric vibrating piece.
- the wiring pattern includes at least one of the connection pads as an AC output terminal of the oscillation circuit.
- the electrode pad and the connection pad are formed on one main surface of the base material constituting the sealing member, and the wiring pattern is It is formed on at least one main surface of the base material constituting the sealing member, the plurality of connection pads are formed on one main surface of the base material constituting the sealing member, and the other main surface of the base material A ground terminal is formed, and a part of the integrated circuit element connected to the connection pad is arranged at a corresponding position on the one main surface side corresponding to the ground terminal formed on the other main surface.
- the output wiring pattern, the power supply wiring pattern, and the ground wiring pattern are included in the wiring pattern, and the electrode pad and the connection pad constitute the sealing member.
- the wiring pattern is formed on at least one main surface of the base material constituting the sealing member, and the plurality of main surfaces on the main surface constituting the sealing member A connection pad is formed, the ground terminal is formed on the other main surface of the substrate, and connected to the connection pad at a corresponding position on the one main surface side corresponding to the ground terminal formed on the other main surface. Since part of the integrated circuit element thus arranged is arranged, it is possible to contribute to the reduction in the height of the oscillator and to stabilize the electrical characteristics of the oscillator.
- connection pad that conducts to the ground terminal is disposed at a corresponding position on the one main surface corresponding to the ground terminal formed on the other main surface, the ground wiring pattern As a result, the influence of ringing of the output waveform of the oscillator depending on the length of the ground wiring pattern can be suppressed.
- the ground terminal and the integrated circuit element connected to the connection pad are stacked via the base material of the sealing member, radiation by the integrated circuit element electrically connected to the connection pad It is possible to suppress noise at the ground terminal and take measures against EMI. Such an effect is generated as the distance between the ground terminal and the integrated circuit element is shortened, that is, as the thickness of the sealing member is decreased. Therefore, the present invention reduces the height of the oscillator. Contribute.
- a wall portion is provided on one main surface of the base material constituting the sealing member so as to surround the cavity, the bottom surface of the cavity is formed in a substantially rectangular shape, and is a curved surface.
- the plurality of connection pads are arranged in an m ⁇ n matrix (matrix) on the bottom surface of the cavity, and the arrangement direction (column direction) of n is the long side direction of the cavity. Good.
- the sealing member having the above-described configuration when the ultrasonic bonding by the FCB method is used when mounting the integrated circuit element on the connection pad, the integrated circuit element is bonded to the connection pad while vibrating in the row direction or the column direction.
- the curved surface of the cavity is more curved in the short side direction than in the long side direction. Therefore, when the arrangement direction of the n is the short side direction of the cavity, when the integrated circuit elements are mounted on the connection pads by the FCB method, the integrated circuit elements are not connected to all the connection pads. In some cases, the integrated circuit element is in a floating state with respect to the connection pad of the portion.
- the bottom surface of the cavity is formed in a substantially rectangular shape and is a curved surface, and the plurality of connection pads are arranged in an m ⁇ n matrix on the bottom surface of the cavity, and the array of n Since the direction is the long side direction of the cavity, when the integrated circuit element is mounted on the connection pad by the FCB method, an integrated circuit element (a terminal such as an Au bump formed on the integrated circuit element) is connected to all the connection pads. At this time, it is possible to prevent the integrated circuit element (terminals such as Au bumps formed on the integrated circuit element) from floating with respect to some of the connection pads. In addition, when an integrated circuit element is mounted on the connection pad by the FCB method, it is possible to prevent the connection of the integrated circuit element to the connection pad from becoming unstable.
- a protrusion may be provided on the electrode pad.
- the electrode pad may be formed in a rectangular shape in plan view, and a protrusion along any one of the sides may be provided on the electrode pad.
- the said electrode pad may be shape
- an L-shaped protrusion in plan view may be provided on the electrode pad.
- the conductive bonding material on the protruding portion accumulates in a space serving as a boundary between the protruding portion and the electrode pad, and the electrode pad It is possible to suppress the conductive bonding material from protruding from the surface. As a result, it is possible to prevent the conductive bonding material from flowing to the other electrode pads and the wiring pattern formed in the vicinity of the electrode pads, and it is possible to prevent an electrode short circuit of the oscillator. .
- the pair of excitation electrodes formed on the piezoelectric vibrating piece may be in a non-opposing state with the AC output terminal, the DC power supply terminal, the output wiring pattern, and the power supply wiring pattern.
- the pair of excitation electrodes formed on the piezoelectric vibrating piece is not opposed to the AC output terminal, the DC power supply terminal, the output wiring pattern, and the power supply wiring pattern.
- capacitive coupling with these terminals and patterns does not occur, and it is possible to prevent unnecessary capacitance from being formed in the oscillator.
- the wiring pattern connected to the connection pad may be formed along a side surface of the integrated circuit element.
- the wiring pattern connected to the connection pad is formed along the side surface of the integrated circuit element, the side surface of the integrated circuit element after the integrated circuit element is mounted on the sealing member; Deviation of the integrated circuit element with respect to the connection pad is facilitated by an appearance inspection (particularly, an appearance inspection by a person) depending on the position with respect to the wiring pattern, and the yield can be improved.
- a pair of recognition portions for image recognition as electrodes may be formed on one main surface of the substrate.
- a pillow portion that is for a piezoelectric vibrating piece and for image recognition may be formed on one main surface of the substrate.
- the piezoelectric vibrating piece can be mounted on the sealing member using the pillow portion as a mounting reference when mounting the piezoelectric vibrating piece on the sealing member.
- the mounting displacement of the piezoelectric vibrating piece on the sealing member is reduced, and it is possible to improve productivity such as improving the yield.
- the vibration region of the piezoelectric vibrating piece is hermetically sealed by a plurality of sealing members, and the gap between the sealing member and the integrated circuit element is 50 ⁇ m or less, and the sealing member, the piezoelectric vibrating piece, The gap may be wider than the gap between the sealing member and the integrated circuit element.
- the gap between the sealing member and the integrated circuit element is 50 ⁇ m or less, and the gap between the sealing member and the piezoelectric vibrating piece is wider than the gap between the sealing member and the integrated circuit element. Therefore, it becomes possible to prevent the piezoelectric vibrating piece from coming into contact with the sealing member because the integrated circuit element becomes a barrier.
- FIG. 1 is a schematic side view of the crystal oscillator according to the first embodiment.
- FIG. 2 is a schematic plan view of the base according to the first embodiment in a state where the crystal resonator element and the IC chip are mounted.
- FIG. 3 is a schematic rear view of the base according to the first embodiment.
- FIG. 4 is a schematic plan view of a base (bottom part) showing an electrode pattern according to the first embodiment.
- FIG. 5 is a schematic plan view of an electrode pad according to another embodiment.
- FIG. 6 is a schematic plan view of an electrode pad according to another embodiment.
- FIG. 7 is a schematic plan view of an electrode pad according to another embodiment.
- FIG. 8 is a schematic plan view of a base according to another embodiment on which a crystal vibrating piece and an IC chip are mounted.
- FIG. 9 is a schematic plan view of a base according to another embodiment on which a crystal vibrating piece and an IC chip are mounted.
- FIG. 10 is a schematic side view of a crystal oscillator that exposes the internal space according to the second embodiment.
- FIG. 11 is a schematic plan view of the base according to the second embodiment in a state where the crystal resonator element and the IC chip are mounted.
- FIG. 12 is a schematic plan view of a base (bottom) showing an electrode pattern according to the second embodiment.
- FIG. 13 is a schematic rear view of the base according to the second exemplary embodiment.
- FIG. 14 is a schematic side view of a crystal oscillator having an open internal space according to the third embodiment.
- FIG. 15 is a schematic plan view of the base according to the third embodiment in a state where the crystal vibrating piece and the IC chip are mounted.
- FIG. 16 is a schematic plan view of a base (bottom) showing an electrode pattern according to the third embodiment.
- FIG. 17 is a schematic rear view of the base according to the third embodiment.
- FIG. 18 is a schematic plan view of a base (bottom) showing an electrode pattern according to another embodiment.
- the crystal oscillator 1 includes a crystal vibrating piece 2 (piezoelectric vibrating piece) that performs piezoelectric vibration, and a one-chip integrated circuit that constitutes an oscillation circuit together with the crystal vibrating piece 2.
- An IC chip 3 integrated circuit element which is an element, and a base 4 (sealing member) for holding and mounting the crystal vibrating piece 2 and the IC chip 3 and hermetically sealing the crystal vibrating piece 2 and the IC chip 3
- a lid 6 (sealing member) that is arranged corresponding to the base 4 and hermetically seals the crystal vibrating piece 2 and the IC chip 3 held and mounted on the base 4.
- a package is constituted by a base 4 and a lid 6, and the base 4 and the lid 6 are joined together by a joining material (not shown) to form an airtightly sealed internal space 11.
- the IC chip 3 is electromechanically ultrasonically bonded to the base 4 using the conductive bump 71 on the base 4 by the FCB (Flip Chip Bonding) method.
- the crystal vibrating piece 2 is electromechanically bonded to the base 4 using a conductive bonding material 72.
- metal bumps such as Au bumps are used for the conductive bumps 71.
- a conductive resin adhesive such as silicone, a metal bump such as Au, or a plating bump is used.
- Ag brazing, Ni plating, Sn alloy such as Au and Sn, glass material or the like is used as the bonding material.
- the quartz crystal resonator element 2 is made of an AT-cut quartz crystal substrate, and the outer shape thereof is a single plate rectangular parallelepiped with both main surfaces 211 and 212 formed in a substantially rectangular shape as shown in FIG.
- the quartz crystal resonator element 2 is configured by integrally forming a vibrating portion 22 that constitutes a vibrating region and a joint portion 23 that is joined to the electrode pads 511 and 512 of the base 4 that are external electrodes.
- the vibration part 22 and the joint part 23 have the same thickness. In the present embodiment, the vibration part 22 and the joint part 23 have the same thickness. However, the present invention is not limited to this, and the vibration part 22 may be thinned to cope with higher frequencies. Good.
- the quartz crystal resonator element 2 includes a pair of excitation electrodes 24 that excites, a pair of terminal electrodes 25 that are electromechanically joined to the electrode pads 511 and 512 of the base 4, and a pair of excitation electrodes 24.
- An extraction electrode 26 to be drawn out to 25 is formed.
- the pair of excitation electrodes 24 is routed by the extraction electrode 26 and electrically connected to the pair of terminal electrodes 25.
- the pair of excitation electrodes 24 are formed corresponding to the center in plan view of both main surfaces 211 and 212 of the vibration part 22.
- the pair of excitation electrodes 24 is composed of, for example, a Cr—Au film formed by laminating Cr and Au in this order from the substrate side.
- the pair of terminal electrodes 25 are formed on the other main surface 212 of the joint portion 23.
- the pair of terminal electrodes 25 are formed in the vicinity including one side of the substrate in the longitudinal direction.
- the pair of terminal electrodes 25 is formed of, for example, a Cr—Au film formed by laminating Cr and Au in this order from the substrate side, like the excitation electrode 24.
- the pair of extraction electrodes 26 are formed on the vibration part 22 and the joint part 23, and are formed on both main surfaces 211 and 212 of the crystal vibrating piece 2 from the vibration part 22 to the joint part 23 without corresponding (opposing) each other.
- These extraction electrodes 26 are composed of, for example, a Cr—Au film formed by laminating Cr and Au in this order from the substrate side, like the excitation electrode 24.
- the base 4 is made of a ceramic material such as alumina, and extends upward from the bottom 41 along the outer periphery of the bottom 41 and the main surface 43 of one main surface 43 of the base 4 as shown in FIGS.
- the wall portion 42 is formed into a box-shaped body.
- the base 4 is formed in a concave shape by laminating a plurality of ceramic annular plates (corresponding to the wall 42) and a conductive material of the electrode 5 (see below) on a single ceramic plate (corresponding to the bottom 41). It is integrally fired into a sectional view shape.
- the top surface of the wall portion 42 of the base 4 is a joint surface with the lid 6, and a first joint layer (not shown) for joining with the lid 6 is provided on the joint surface.
- the first bonding layer has a laminated structure of a plurality of layers.
- a metallized layer (not shown) made of W or Mo, a Ni film made of Ni, and Au made of Au.
- a film is laminated in order.
- the metallized layer is integrally formed at the time of firing the ceramic after printing the metallized material, and the Ni film and the Au film are formed by a plating technique.
- a cavity 44 having a rectangular shape in plan view surrounded by the bottom 41 and the wall 42 is formed on one main surface 43 of the base 4, and the crystal vibrating piece 2 and the IC chip 3 are arranged on the bottom surface 441 of the cavity 44. Installed.
- castellations 46 are formed at the four corners of the rear surface of the casing 4 (other main surface 45) of the base 4, respectively.
- These castellations 46 are arc-shaped cutouts (semi-arc-shaped recesses), and are formed in a state extending in the vertical direction (X direction which is the height direction of the base 4 shown in FIG. 1) on the side surface 47 of the casing. Has been.
- two vias 48 are formed in the base 4 for leading the excitation electrode 24 of the crystal vibrating piece 2 from the inside of the cavity 44 to the outside of the cavity 44.
- the via 48 is filled with a conductive member 481 made of Cu, W, Mo, or the like.
- the two vias 48 are formed through both main surfaces 43 and 45 of the base 4. These vias 48 are inclined with respect to any side of the base 4 and are inclined with respect to the short side direction of the base (see the line L1 shown in FIG. 4) at an angle ⁇ (5 ° to 30 °) (FIG. 4). 2), and is arranged at a position that is point-symmetric about the center point 451 of the other main surface 45. Further, the two vias 48 are formed in a region other than the corresponding region corresponding to the wall portion 42 formed on the one main surface 43 of the other main surface 45 (hereinafter, this corresponding region is referred to as a wall corresponding region 491). Has been. That is, the two vias 48 are formed in a region of the other main surface 45 corresponding to the bottom surface 441 of the cavity 44 formed in the one main surface 43 (hereinafter, this corresponding region is referred to as a cavity corresponding region 492).
- the external terminals 53 include an AC output terminal 531 of the IC chip 3, a DC power supply terminal 532, a DC control terminal 533, and a ground terminal 534.
- the electrode pads 511 and 512 are formed on the bottom surface 441 of the cavity 44 of the main surface 43 of the base 4, and the output wiring pattern 551 (see below) and the ground wiring pattern on the bottom surface 441 of the cavity 44. It is arranged closer to the power wiring pattern 552 (see below) and the control wiring pattern 553 (see below) than 554 (see below). That is, the electrode pads 511 and 512 are separated from the output wiring pattern 551 (see below) and the ground wiring pattern 554 (see below) and near the power supply wiring pattern 552 (see below) and the control wiring pattern 553 (see below). It is arranged in. Further, as shown in FIG. 4, the electrode pads 511 and 512 are each formed into a rectangular shape in a plan view (rectangular in the present embodiment), and in the vicinity of the short side on the electrode pads 511 and 512, A rectangular protrusion 56 is provided along.
- connection pads 521, 522, 523, 524, 525, 526 are arranged in a matrix (3 ⁇ 2; m ⁇ n) on the bottom surface 441 of the cavity 44 of the one main surface 43 of the base 4. Is formed.
- the arrangement direction of n (column direction which is the n direction) is the long side direction of the cavity 44.
- the connection pads 521, 522, 523, 524, 525, and 526 are formed on the bottom surface 441 of the cavity 44 that is flush with the electrode pads 511 and 512.
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are, as shown in FIG. 3, the wall corresponding region 491 of the other main surface 45 (the outer periphery of the other main surface 45. And a part of these are formed at a cavity facing position 492 of the other main surface 45 (a central position excluding the outer periphery of the other main surface 45).
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are formed at each corner of the other main surface 45 and the castellation 46.
- the ground terminal 534 is electrically connected to a corresponding position (opposing position) of the one main surface 43 corresponding to (facing) the base material (base 4) with the position of the ground terminal 534 formed on the other main surface 45 interposed therebetween.
- a connection pad 526 is provided.
- a part of the IC chip 3 and the ground terminal 534 are in a laminated state facing each other with the base material of the base 4 interposed therebetween.
- a part of the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 is formed at the cavity facing position 492, but the present invention is not limited to this. Instead, it may be formed in the wall portion corresponding region 491 (the outer periphery of the other main surface 45) of the other main surface 45, and may be formed only in the wall portion corresponding region 491 of the other main surface 45.
- the inspection terminals 541 and 542 are formed only in the cavity corresponding region 492 (the central region excluding the outer periphery of the other main surface 45) of the other main surface 45 as shown in FIG. Specifically, the inspection terminals 541 and 542 are formed side by side along the short side direction of the other main surface 45 on the middle position of the long side of the other main surface 45. In addition, vias 48 are formed under the inspection terminals 541 and 542, respectively.
- the electrode pads 511 and 512, the connection pads 521 and 522, and the inspection terminals 541 and 542 having the above-described configuration are electrically connected by the via 48 and the wiring pattern 55 (see the inspection wiring patterns 555 and 556 below).
- 523, 524, 525, 526, AC output terminal 531, DC power supply terminal 532, DC control terminal 533, and ground terminal 534 are connected to wiring pattern 55 (output wiring pattern 551, power supply wiring pattern 552, control wiring pattern described below). 553 and the ground wiring pattern 554).
- the wiring pattern 55 includes an output wiring pattern 551 for connecting the connection pad 525 to the AC output terminal 531 of the IC chip 3, and a power supply wiring pattern 552 for connecting the connection pad 524 to the DC power supply terminal 532.
- a pattern 555 and a test wiring pattern 556 for connecting the connection pad 522 to the test terminal 541 and the electrode pad 512, and the electrode pads 511, 512 and the connection pads 521, 522, 523, 524, 525, 526 It will be in a conductive state.
- a pillow portion 58 for the crystal vibrating piece 2 that is continuous with the wiring pattern 55 is formed on the control wiring pattern 553 that connects the connection pad 523 and the DC control terminal 533.
- a wiring pattern 55 connected to the connection pads 522, 523, 524, 526 is formed along the side surface of the IC chip 3 with the IC chip 3 mounted on the base 4.
- a ground wiring pattern 554 connected to the connection pad 526 is formed along the lower side surface 32 of the IC chip 3, and the connection pad is formed along the right side surface 33 of the IC chip 3.
- a power supply wiring pattern 552 connected to 524 is formed, an inspection wiring pattern 556 connected to the connection pad 522 is formed along the upper side surface 34 of the IC chip 3, and a connection pad is formed along the left side surface 35 of the IC chip 3.
- a control wiring pattern 553 connected to 523 is formed.
- the pair of excitation electrodes 24 formed on the crystal vibrating piece 2 includes an AC output terminal 531, a DC power supply terminal 532, a DC control terminal 533, a ground terminal 534, an output wiring pattern 551,
- the power supply wiring pattern 552, the control wiring pattern 553, and the ground wiring pattern 554 are in a non-opposing state that does not face each other through the base material of the base 4.
- the electrode 5 of the base 4 is formed by printing a metallized material such as W or Mo and firing it integrally with the base 4.
- the electrode pads 511, 512, the connection pads 521, 522, 523, 524, 525, 526, the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, the ground terminal 534, and the inspection terminal 541 and 542 are formed by forming Ni plating on the metallized upper part and Au plating on the upper part.
- an electrolytic plating method or an electroless plating method can be given as a construction method of plating formation here.
- the lid 6 is formed from a metal material and is formed as a single rectangular parallelepiped as shown in FIG.
- a bonding material (not shown) such as Ag brazing for bonding to the base 4 is formed on the lower surface of the lid 6, and the second bonding layer corresponds to the bonding surface of the wall portion 42 of the base 4.
- the lid 6 is joined to the base 4 by seam welding to constitute a package of the crystal oscillator 1 by the lid 6 and the base 4.
- the IC chip 3 is disposed on the bottom surface 441 of the cavity 44 of the base 4, and the IC chip 3 is connected to the connection pads 521 by the FCB method via the conductive bumps 71. Electromechanically ultrasonically bonded to 522, 523, 524, 525, 526.
- the crystal vibrating piece 2 is arranged on the bottom surface 441 of the cavity 44 of the base 4 while being arranged on the IC chip 3, and the crystal vibrating piece 2 is electromechanically connected to the electrode pads 511 and 512 via the conductive bonding material 72. Be joined.
- a lid 6 is disposed on the base 4 on which the IC chip 3 and the crystal vibrating piece 2 are mounted on the bottom surface 441 of the coplanar cavity 44, and then the package (base 4, lid 6 is sealed by seam sealing in a nitrogen atmosphere. ) Is scanned along the short side in plan view to melt the first bonding layer and the bonding material, and then the seam roller (in the plan view long side of the package (base 4 and lid 6) ( The first bonding layer and the bonding material are melted by scanning. By this seam sealing, the bonding material formed on the lid 6 and the first bonding layer of the base 4 are bonded, and as shown in FIG. 1, the crystal oscillator 2 and the IC chip 3 are hermetically sealed. 1 is manufactured.
- the crystal oscillator 1 manufactured here is mounted on an external circuit board with a conductive bonding material such as solder.
- the gap between the lid 6 and the IC chip 3 is 50 ⁇ m or less, and the gap between the lid 6 and the crystal vibrating piece 2 is larger than the gap between the lid 6 and the IC chip 3. wide.
- the gap between the lid 6 and the IC chip 3 is 50 ⁇ m, and the gap between the lid 6 and the crystal vibrating piece 2 is 100 ⁇ m.
- the height dimension in the X direction from the flat surface of the wall corresponding region 491 to the apex of the curved surface of the cavity corresponding region 492 is about 30 ⁇ m or less.
- the crystal resonator element 2 and the IC chip 3 are not opposed to the bottom surface 441 of the cavity 33 in a plan view. Moreover, since they are arranged side by side, it is possible to cope with a reduction in the height of the base 4, and as a result, it is possible to cope with a reduction in the height of the crystal oscillator 1. In addition, since the base 4 is composed of only two layers including the bottom portion 41 and the wall portion 42, the crystal oscillator 1 can be reduced in height.
- the wiring pattern 55 includes at least the output wiring pattern 551 and the power supply wiring pattern 552, and the electrode pads 511 and 512 are It is arranged closer to the power supply wiring pattern 552 than the output wiring pattern 551. That is, since the electrode pads 511 and 512 are arranged on the bottom surface 441 of the cavity 44 away from the output wiring pattern 551 and close to the power supply wiring pattern 552, the electrode pads 511 and 512 are crystallized from the output wiring pattern 551 in which alternating current and high frequency signals flow.
- the influence of unnecessary radiation generated from the output wiring pattern 551 is separated by separating the electrode pads 511 and 512 (specifically, the crystal vibrating piece 2 electrically connected to the electrode pads 511 and 512) that electrically connect the resonator element 2. Can be prevented from reaching the crystal vibrating piece 2.
- the electrode pads 511 and 512 specifically, the crystal vibrating piece 2 electrically connected to the electrode pads 511 and 512
- the electrode pads 511 and 512 are connected from the output wiring pattern 551.
- the crystal oscillator 1 even if the frequency of the signal flowing through the output wiring pattern 551 and the frequency of the signal flowing through the electrode pads 511 and 512 connecting the crystal vibrating piece 2 are the same, the phase is shifted. Further, since the signal waveform is different, a potential difference is generated. Therefore, these differences cause a problem due to the interaction between the output wiring pattern 551 and the electrode pads 511 and 512.
- the crystal vibration electrically connected to the electrode pads 511 and 512 (specifically, the electrode pads 511 and 512 from the output wiring pattern 551). Since the pieces 2) are separated, problems due to interaction can be suppressed.
- a pair of excitation electrodes 24 formed on both main surfaces 211 and 212 of the crystal resonator element 2 are sputtered, or a weight is attached by a vapor deposition method to generate crystal vibration.
- the frequency of the piece 2 is adjusted.
- a piece of the excitation electrode 24 scattered from the excitation electrode 24 by sputtering or a weight material may adhere to the output wiring pattern 551 in which an alternating current or a high frequency signal flows. In this case, the surface resistance of the wiring pattern 55 is lowered, and a problem such as a short circuit occurs on the wiring pattern 55.
- the electrode pads 551 and 512 are disposed closer to the power supply wiring pattern 552 than the output wiring pattern 551 as shown in FIGS. Therefore, when the crystal vibrating piece 2 is electrically connected to the electrode pads 511 and 512, the crystal vibrating piece 2 is arranged on the bottom surface 441 of the cavity 44, away from the output wiring pattern 551 and close to the power supply wiring pattern 552. Therefore, such a problem is unlikely to occur.
- the wiring pattern 55 includes at least the output wiring pattern 551, the power supply wiring pattern 552, and the ground wiring pattern 554, and the electrode pads 511 and 512 and the connection pad 521. , 522, 523, 524, 525, and 526 are formed on one main surface 43 of the base 4, and the wiring pattern 55 is formed on at least one main surface 43 of the base 4 and is formed on the other main surface 45. Since a part of the IC chip 3 connected to the connection pad 526 that conducts to the ground terminal 534 is disposed at the corresponding position on the one main surface 43 side corresponding to 534, the length of the ground wiring pattern 554 is shortened. As a result, the crystal oscillator 1 can be reduced in height and the electrical characteristics of the crystal oscillator 1 can be stabilized. That.
- the IC chip 3 connected to the connection pad 526 conducting to the ground terminal 534 at the corresponding position on the one main surface 43 side corresponding to the ground terminal 534 formed on the other main surface 45. Therefore, the length of the ground wiring pattern 554 can be shortened, and as a result, the influence of the ringing of the output waveform of the crystal oscillator 1 depending on the length of the ground wiring pattern 554 can be suppressed. it can.
- the ground terminal 534 and the IC chip 3 connected to the connection pad 526 are stacked (opposed) via the base 4 base material, the ground terminal 534 and the connection pad 526 are electrically connected.
- the IC chip 3 to be stacked is in a laminated state. Therefore, the radiation noise due to the IC chip 3 that is electrically connected to the connection pad 526 can be suppressed by the ground terminal 534 to take measures against EMI. Such an effect is generated as the distance between the ground terminal 534 and the IC chip 3 is shortened, that is, as the thickness of the base 4 is decreased, and thus, the present embodiment reduces the height of the crystal oscillator 1. Contribute.
- the conductive bonding material 72 on the protrusion 56 serves as a boundary between the protrusion 56 and the electrode pads 511 and 512. And the conductive bonding material 72 can be prevented from protruding from the electrode pads 511 and 512. As a result, the conductive bonding material 72 is prevented from flowing to the other electrode pad 512 (511) or the wiring pattern 55 (the power supply wiring pattern 552 in this embodiment) formed in the vicinity of the electrode pad 511 (512). Therefore, an electrode short circuit of the crystal oscillator 1 can be prevented.
- the pair of excitation electrodes 24 formed on the crystal vibrating piece 2 includes the AC output terminal 531, the DC power supply terminal 532, the output wiring pattern 551, and the power supply wiring pattern 552. It is a non-opposing state. As a result, capacitive coupling with these terminals and patterns does not occur, and it is possible to prevent unnecessary capacitance from being formed in the crystal oscillator 1. In addition, it is possible to suppress the generation of noise due to the excitation electrode 24 being affected by the harmonics of the AC output terminal 531 and the output wiring pattern 551 that are the configuration of the oscillation circuit. Similarly, noise generated in other DC power supply terminals 532, DC control terminals 533, ground terminals 534, power supply wiring patterns 552, and ground wiring patterns 554 that constitute the oscillation circuit can be suppressed.
- connection pads 522, 523, 524, 526 are formed along the side surface of the IC chip 3 (see reference numerals 32, 33, 34, 35 shown in FIG. 2), the base 4 The displacement of the IC chip 3 with respect to the connection pads 522, 523, 524, and 526 is facilitated by an appearance inspection (particularly an appearance inspection by a person) depending on the position of the side surface of the IC chip 3 and the wiring pattern 55 after the IC chip 3 is mounted on Yield can be improved.
- the distance between the base 4 and the base 4 is larger than that of the vertically disposed structure (laminated structure).
- the distance is the same as the distance between the IC chip 3 and the base 4. Therefore, heat from the outside (for example, heat from the mounting substrate through the base 4) is similarly transmitted to the crystal vibrating piece 2 and the IC chip 3.
- the quartz crystal vibrating piece 2 and the IC chip 3 are disposed on the base 4 having the same thickness.
- the crystal oscillator 1 is effective not only in SPXO but also in TCXO, for example.
- the gap between the lid 6 and the IC chip 3 is 50 ⁇ m, and the gap between the lid 6 and the crystal vibrating piece 2 is 100 ⁇ m. Even if it occurs, the IC chip 3 plays a role of supporting the lid 6, and the crystal vibrating piece 2 can be prevented from coming into contact with the lid 6.
- the lid 6 when the lid 6 is deformed, the lid 6 is deformed so that a portion near the center of the cavity 44 is recessed. Even when the lid 6 is deformed, the electrode pads 511 and 512 for connecting the crystal vibrating piece 2 are formed not near the center of the cavity 44 but near the outer periphery in plan view of the cavity 44. In addition, it is possible to prevent the quartz crystal vibrating piece 2 and the conductive bonding material 72 that joins the quartz crystal vibrating piece 2 from coming into contact with each other and causing non-oscillation.
- a crystal oscillator is applied as the piezoelectric vibration device.
- the material is not limited to quartz, and any piezoelectric material may be used.
- the present invention is not limited to the crystal oscillator according to the present embodiment, and may be, for example, an oscillator using a surface acoustic wave element.
- the external terminal 53 has a four-terminal configuration including the AC output terminal 531 of the IC chip 3, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534.
- the present invention is not limited to this, and a four-terminal configuration in which a voltage control terminal is formed instead of the DC control terminal 533 may be used.
- a four-terminal configuration in which a dummy terminal that does not function as a terminal for connecting to the outside is formed may be used.
- the thing of the structure of 5 or more terminals formed at least 2 or more among the DC control terminal 533, the voltage control terminal, and the dummy terminal may be used.
- the external terminal 53 may have a configuration of six or more terminals including other write terminals as additional terminals.
- the two vias 48 are formed in the base 4, but the present invention is not limited to this, and the number of vias 48 can be arbitrarily set.
- the package of the crystal oscillator 1 is constituted by the box-shaped base 4 and the single-plate lid 6, but the present invention is not limited to this, and the base 4 and the crystal vibration are not limited thereto.
- An oscillator package in which the piece 2 and the lid 6 are laminated to form a sandwich structure may be used.
- the present invention is applied to the base 4.
- the present invention is not limited to this, and a lid on which the crystal vibrating piece 2 and the IC chip 3 are mounted and the wiring pattern 55 and the like are formed.
- the present invention may be applied to 6.
- the bonding material is formed on the lid 6 before the base 4 and the lid 6 are bonded.
- the present invention is not limited to this, and the bonding material may be formed on the base 4. Good.
- the vibration part 22 and the joint part 23 have the same thickness.
- the present invention is not limited to this, and the vibration part 22 may be thinned to cope with higher frequencies. .
- the protrusion 56 along the short side direction is provided in the vicinity of the short side on the electrode pads 511 and 512.
- the present invention is not limited to this.
- a protrusion 56 along the side direction may be provided in any side on 512, for example, in the vicinity of the long side.
- the protrusion 56 along the short side direction is provided in the vicinity of the short side on the electrode pads 511 and 512.
- the present invention is not limited to this.
- protrusions 56 along diagonal lines may be provided on the electrode pads 511 and 512.
- the protrusion 56 along the short side direction is provided in the vicinity of the short side on the electrode pads 511 and 512.
- the present invention is not limited to this, and is shown in FIG. As described above, a protrusion 56 having an L shape in plan view may be provided on the electrode pads 511 and 512.
- connection pad 526 that conducts to the ground terminal 534 is disposed at the corresponding position of the one main surface 43 corresponding to the ground terminal 534 formed on the other main surface 45.
- the connection pads 525 and 526 that are electrically connected to the ground terminal 534 and the AC output terminal 531 may be disposed between the corresponding position of the one main surface 43 corresponding to. Even in this case, both the lengths of the ground wiring pattern 554 and the output wiring pattern 551 can be shortened. As a result, the crystal oscillator 1 that depends on the lengths of the ground wiring pattern 554 and the output wiring pattern 551. The influence of ringing on the output waveform can be suppressed.
- connection pads 521, 522, 523, 524, 525, and 526 are formed on the cavity 44 of the one principal surface 43 of the base 4 in a plan view.
- a matrix (3 ⁇ 2) is formed on the bottom surface 441, and the arrangement direction of m is the short side direction of the cavity 44.
- the present invention is not limited to this, and the bottom surface of the cavity 44 is subject to m ⁇ n.
- a plurality of connection pads 441 may be arranged in an m ⁇ n matrix, and the arrangement direction (column direction) of n may be the long side direction of the cavity 44. For example, as shown in FIG.
- connection pads 521, 522, 523, 524, 525, 526 may be arranged in a matrix (2 ⁇ 3) on the bottom surface 441, and the arrangement direction of n may be the long side direction of the cavity 44.
- the bottom surface 441 of the cavity 44 is formed in a substantially rectangular shape and is a curved surface, and connection pads 521, 522, 523, 524, 525, 526 are formed on the bottom surface 441 of the cavity 44.
- the base 4 is formed in a matrix (2 ⁇ 3; m ⁇ n) in plan view, and since the arrangement direction of n is the long side direction of the cavity 44, the connection pads 521, 522, 523 are formed by the FCB method.
- the IC chip 3 When the IC chip 3 is mounted on the 524, 525, 526, the IC chip 3 (terminal 31 such as Au bump formed on the IC chip 3) is attached to all the connection pads 521, 522, 523, 524, 525, 526. At this time, the IC chip 3 (the Au bar formed on the IC chip 3) is connected to the connection pads 521, 522, 523, 524, 525, 526 at this time. It is possible to prevent the terminal 31) such as an amplifier from floating.
- the bonding of the IC chip 3 to the connection pads 521, 522, 523, 524, 525, 526 is unstable. Can be prevented.
- the gap between the lid 6 and the IC chip 3 is 50 ⁇ m, and the gap between the lid 6 and the crystal vibrating piece 2 is 100 ⁇ m.
- the gap between the chip 3 is 50 ⁇ m or less, and the gap between the lid 6 and the crystal vibrating piece 2 only needs to be wider than the gap between the lid 6 and the IC chip 3. Therefore, there may be no gap between the lid 6 and the IC chip 3 (0 ⁇ m), and the lid 6 and the crystal vibrating piece 2 may have a gap.
- the lower surface of the lid 6 facing the base 4 may be a flat surface, and the upper surface of the IC chip 3 may be in contact with the lower surface of the lid 6.
- the lid 6 may be curved toward the base 4 side, or the lower surface of the lid 6 may be formed into a curved surface, and the upper surface of the IC chip 3 may be in contact with the lower surface of the lid 6.
- the heat of the IC chip 3 can be efficiently radiated to the outside of the oscillator 1 through the lid 6, which is effective for stable operation of the oscillator 1 and is also optimal for EMI countermeasures. .
- the crystal oscillator 1 according to the second embodiment is different from the first embodiment in the base 4.
- the operation effect and modification by the same structure have the same operation effect and modification as Embodiment 1 mentioned above. Therefore, in the second embodiment, the configuration of the base 4 different from the first embodiment will be described, and the description of the same configuration will be omitted.
- a pair of electrode pads 511 and 512 that are electromechanically joined to the respective excitation electrodes 24 of the crystal vibrating piece 2 and terminals 31 of the IC chip 3 are electrically connected.
- Connection pads 521, 522, 523, 524, 525, and 526 are electrically connected to an external device such as an external circuit board (not shown) using a conductive bonding material (not shown) such as solder.
- external terminals 53 AC output terminal 531, DC power supply terminal 532, DC control terminal 533, and ground terminal 534 and inspection terminals 541 and 542 for measuring and inspecting the characteristics of the crystal resonator element 2 are formed. .
- the electrode pads 511, 512 and the connection pads 521, 522, 523, 524, 525, 526 are the bottom surface of the cavity 44 on one main surface 43 (specifically, on the bottom 41 of the base 4) that is in the same plane. 441 is formed.
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are formed in the wall corresponding region 491 (the outer periphery of the other main surface 45) of the other main surface 45 and a part thereof. Is formed at a cavity facing position 492 of the other main surface 45 (a central position excluding the outer periphery of the other main surface 45).
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are formed at each corner of the other main surface 45 and the castellation 46.
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are partly formed at the cavity facing position 492.
- the present invention is not limited to this. As long as it is formed in the wall portion corresponding region 491 (the outer periphery of the other main surface 45) of the other main surface 45, it may be formed only in the wall portion corresponding region 491 of the other main surface 45.
- the inspection terminals 541 and 542 are formed only in the cavity corresponding region 492 of the other main surface 45 (the central region excluding the outer periphery of the other main surface 45), and the shape thereof is circular in plan view as shown in FIG. . Specifically, the inspection terminals 541 and 542 are formed side by side along the short side direction of the other main surface 45 on the middle position of the long side of the other main surface 45. In addition, vias 48 are formed under the inspection terminals 541 and 542, respectively, and the vias 48 are arranged at positions displaced from the centers of the inspection terminals 541 and 542. An insulating portion 81 made of an insulating material such as a resist is provided so as to cover the inspection terminals 541 and 542.
- this insulating portion 81 it is possible to prevent the inspection terminals 541 and 542 from being exposed after the crystal oscillator 1 is manufactured, and to prevent the inspection terminals 541 and 542 from being connected to terminals such as other electronic devices. Further, as shown in the third embodiment below, it is not necessary to form the base 4 in a concave shape (the concave portion 82) (see FIG. 14), and the inspection terminals 541 and 542 can be connected to other types without reducing the strength of the base 4. Connection to terminals such as electronic devices can be prevented. Note that the insulating portion 81 is not limited to the present embodiment, and the material and shape can be arbitrarily set as long as they can cover the inspection terminals 541 and 542.
- the wiring pattern 55 includes an output wiring pattern 551 for connecting the connection pad 525 to the AC output terminal 531 of the IC chip 3, and a power supply wiring pattern for connecting the connection pad 524 to the DC power supply terminal 532. 552, a control wiring pattern 553 for connecting the connection pad 523 to the DC control terminal 533, a ground wiring pattern 554 for connecting the connection pad 526 to the ground terminal 534, and a connection pad 521 for connection to the inspection terminal 542 and the electrode pad 511.
- a test wiring pattern 555 and a test wiring pattern 556 for connecting the connection pad 522 to the test terminal 541 and the electrode pad 512 are included.
- the electrode pads 511 and 512 and the connection pads 521, 522, 523, 524, 525, and 526 are included.
- the pillow for the crystal vibrating piece 2 connected to the control wiring pattern 553 on the control wiring pattern 553 that connects the connection pad 523 and the DC control terminal 533.
- the part 58 is not formed, but the pillow part 58 is formed on the base 4 so as to be separated from the control wiring pattern 553.
- the electrode pads 511 and 512, the connection pads 521 and 522, and the inspection terminals 541 and 542 having the above-described configuration are electrically connected by the via 48 and the wiring pattern 55 (inspection wiring patterns 555 and 556), and the connection pads 523 and 524 are connected.
- 525, 526 and AC output terminal 531, DC power supply terminal 532, DC control terminal 533, and ground terminal 534 are connected to wiring pattern 55 (output wiring pattern 551, power supply wiring pattern 552, control wiring pattern 553, and ground wiring pattern). 554).
- a pair of recognition portions 57 for image recognition in the manufacturing process of the crystal oscillator 1 are formed. As shown in FIGS. 11 and 12, a part of these recognition portions 57 are exposed in the cavity 44 and are formed along the short side direction of the base 4. These recognition units 57 can be accurately mounted on the base 4 as a reference for mounting the crystal vibrating piece 2 and the IC chip 3 on the base 4.
- the recognition unit 57 is not limited to the present embodiment, and may have another shape as long as it has a pair of shapes.
- a pillow portion 58 for the crystal vibrating piece 2 is formed along the control wiring pattern 553 connecting the connection pad 523 and the DC control terminal 533 and spaced apart from the control wiring pattern 553.
- the pillow part 58 is formed together with the control wiring pattern 553 and plays the same role of recognition as the recognition part 57 described above.
- one end edge 581 of the pillow part 58 and the end edge 5111 of the electrode pad 511, and the other end edge 582 of the pillow part 58 and the end edge 5121 of the electrode pad 512 are along the short side direction of the base 4.
- the pillow part 58 and the electrode pads 511 and 512 are formed, and the crystal vibrating piece 2 and the IC chip 3 are accurately attached to the base 4 as a mounting reference when the crystal vibrating piece 2 and the IC chip 3 are mounted on the base 4. Can be mounted on. As a result, the mounting deviation of the crystal vibrating piece 2 or the IC chip 3 to the base 4 is reduced, and the productivity can be improved, such as improving the yield.
- the crystal oscillator 1 according to the third embodiment is different from the first embodiment in the base 4.
- the operation effect and modification by the same structure have the same operation effect and modification as Embodiment 1 mentioned above. Therefore, in the present third embodiment, the configuration of the base 4 different from the first embodiment will be described, and the description of the same configuration will be omitted.
- a pair of electrode pads 511 and 512 that are electromechanically bonded to the excitation electrodes 24 of the crystal vibrating piece 2 and the terminals 31 of the IC chip 3 are electrically connected.
- Connection pads 521, 522, 523, 524, 525, and 526 are electrically connected to an external device such as an external circuit board (not shown) using a conductive bonding material (not shown) such as solder.
- An AC output terminal 531, a DC power supply terminal 532, a DC control terminal 533, a ground terminal 534, and inspection terminals 541 and 542 for measuring and inspecting the characteristics of the crystal vibrating piece 2 are formed.
- the electrode pads 511, 512 and the connection pads 521, 522, 523, 524, 525, 526 are the bottom surface of the cavity 44 on one main surface 43 (specifically, on the bottom 41 of the base 4) that is in the same plane. 441 is formed.
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are formed in the wall corresponding region 491 (the outer periphery of the other main surface 45) of the other main surface 45 and a part thereof. Is formed at a cavity facing position 492 of the other main surface 45 (a central position excluding the outer periphery of the other main surface 45).
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are formed at each corner of the other main surface 45 and the castellation 46.
- the AC output terminal 531, the DC power supply terminal 532, the DC control terminal 533, and the ground terminal 534 are partly formed at the cavity facing position 492.
- the present invention is not limited to this. As long as it is formed in the wall portion corresponding region 491 (the outer periphery of the other main surface 45) of the other main surface 45, it may be formed only in the wall portion corresponding region 491 of the other main surface 45.
- the inspection terminals 541 and 542 are formed only in the cavity corresponding region 492 (the central region excluding the outer periphery of the other main surface 45) of the other main surface 45, and the shape thereof is circular in plan view as shown in FIG. . Specifically, the inspection terminals 541 and 542 are formed side by side along the short side direction of the other main surface 45 on the middle position of the long side of the other main surface 45. In addition, vias 48 are formed under the inspection terminals 541 and 542, respectively, and the vias 48 are arranged at positions displaced from the centers of the inspection terminals 541 and 542. The inspection terminals 541 and 542 are formed in a recess 82 formed on the other main surface 45 of the base 4.
- the inspection terminals 541 and 542 can be arranged above the X direction with respect to the AC output terminal 531, DC power supply terminal 532, DC control terminal 533, and ground terminal 534.
- the inspection terminals 541 and 542 are prevented from connecting to the terminals such as other electronic devices. Can be prevented.
- there is no need to perform resist processing as in the second embodiment see FIG. 10). Therefore, compared with the second embodiment, the resist processing steps can be reduced, and the same effect can be obtained at low cost.
- the concave portion 82 is not limited to the present embodiment, and the shape is not limited as long as the inspection terminals 541 and 542 can be arranged in the concave portion 82.
- the wiring pattern 55 includes an output wiring pattern 551 for connecting the connection pad 525 to the AC output terminal 531 of the IC chip 3, and a power supply wiring pattern for connecting the connection pad 524 to the DC power supply terminal 532.
- a test wiring pattern 555 and a test wiring pattern 556 for connecting the connection pad 522 to the test terminal 541 and the electrode pad 512 are included.
- the electrode pads 511 and 512 and the connection pads 521, 522, 523, 524, 525, and 526 are included. Can be connected to
- the electrode pads 511 and 512, the connection pads 521 and 522, and the inspection terminals 541 and 542 having the above-described configuration are electrically connected by the via 48 and the wiring pattern 55 (inspection wiring patterns 555 and 556), and the connection pads 523 and 524 are connected.
- 525, 526 and AC output terminal 531, DC power supply terminal 532, DC control terminal 533, and ground terminal 534 are connected to wiring pattern 55 (output wiring pattern 551, power supply wiring pattern 552, control wiring pattern 553, and ground wiring pattern). 554).
- a pair of recognition portions 57 for image recognition in the manufacturing process of the crystal oscillator 1 are formed. As shown in FIGS. 15 and 16, some of these recognition portions 57 are exposed in the cavity 44 and are formed along the short side direction of the base 4. These recognition units 57 can be accurately mounted on the base 4 as a reference for mounting the crystal vibrating piece 2 and the IC chip 3 on the base 4.
- the recognition unit 57 is not limited to the present embodiment, and may have another shape as long as it has a pair of shapes.
- two crystal vibrating reed pieces 2 that are continuous to the control wiring pattern 553 are provided on the control wiring pattern 553 that connects the connection pad 523 and the DC control terminal 533.
- the pillow portions 58 and 59 are formed. These pillow portions 58 and 59 are formed together with the control wiring pattern 553, and also play a role of recognition similar to the recognition portion 57 described above. Regarding the role of this recognition, the end edge (other end edge 582) of one pillow part 58 and the end edge 5111 of the electrode pad 511 are formed along the short side direction of the base 4, and the end edge of the other pillow part 59 is formed. 591 and an edge 5121 of the electrode pad 512 are formed along the short side direction of the base 4.
- the pillow portions 58 and 59 and the electrode pads 511 and 512 are mounted on the base 4 and the crystal vibrating piece 2 and the IC chip 3 are mounted on the base 4.
- the crystal vibrating piece 2 and the IC chip 3 can be accurately mounted on the base 4.
- the mounting deviation of the crystal vibrating piece 2 or the IC chip 3 to the base 4 is reduced, and the productivity can be improved, such as improving the yield.
- the two pillow portions 58 and 59 shown in FIG. 16 are not limited to this, and as shown in FIG. 17, along the control wiring pattern 553 that connects the connection pad 523 and the AC output terminal 531.
- two pillow portions 58 and 59 for the crystal vibrating piece 2 that are separated from the control wiring pattern 553 may be formed. Even in this case, it has the same effect as the pillow portions 58 and 59 shown in FIG.
- the pillow portion 58 for the crystal vibrating piece 2 along the control wiring pattern 553 connecting the connection pad 523 and the DC control terminal 533 and spaced apart from the control wiring pattern 553. , 59 are formed, the crystal vibrating piece 2 can be held away from the control wiring pattern 553, and a short circuit between the control wiring pattern 553 and the excitation electrode 24 can be prevented.
- the present invention can be applied to a piezoelectric vibration device such as a crystal oscillator.
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Abstract
Description
本実施の形態にかかる水晶発振器1には、図1,2に示すように、圧電振動を行う水晶振動片2(圧電振動片)と、水晶振動片2とともに発振回路を構成する1チップ集積回路素子であるICチップ3(集積回路素子)と、これら水晶振動片2およびICチップ3を保持・搭載し、水晶振動片2およびICチップ3を気密封止するためのベース4(封止部材)と、ベース4と対応して配置され、ベース4に保持・搭載した水晶振動片2およびICチップ3を気密封止するための蓋6(封止部材)と、が設けられている。
次に、本実施の形態2にかかる水晶発振器1を図面を用いて説明する。なお、本実施の形態2にかかる水晶発振器1は、上記の実施の形態1に対して、ベース4が異なる。しかしながら、同一構成による作用効果及び変形例は、上記した実施の形態1と同様の作用効果及び変形例を有する。そこで、本実施の形態2では、上記の実施の形態1と異なるベース4の構成について説明し、同一の構成についての説明を省略する。
次に、本実施の形態3にかかる水晶発振器1を図面を用いて説明する。なお、本実施の形態3にかかる水晶発振器1は、上記の実施の形態1に対して、ベース4が異なる。しかしながら、同一構成による作用効果及び変形例は、上記した実施の形態1と同様の作用効果及び変形例を有する。そこで、本実施の形態3では、上記の実施の形態1と異なるベース4の構成について説明し、同一の構成についての説明を省略する。
11 内部空間
2 水晶振動片(圧電振動片)
211 一主面
212 他主面
22 振動部
23 接合部
24 励振電極
25 端子電極
26 引出電極
3 ICチップ(電子部品素子)
31 端子
32 下側面
33 右側面
34 上側面
35 左側面
4 ベース(封止部材)
41 底部
42 壁部
43 一主面
44 キャビティ
441 底面
45 他主面
451 中心点
46 キャスタレーション
47 筐体側面
48 ビア
481 導通部材
491 壁部対応領域
492 キャビティ対応領域
5 電極
511 電極パッド
5111 端縁
512 電極パッド
5121 端縁
521,522,523,524,525,526 接続パッド
53 外部端子
531 交流出力端子
532 直流電源端子
533 直流制御端子
534 グランド端子
541,542 検査端子
55 配線パターン
551 出力配線パターン
552 電源配線パターン
553 制御配線パターン
554 グランド配線パターン
555,556 検査配線パターン
56 突起部
56 枕部
581 一端縁
582 他端縁
57 認識部
58 枕部
581 端縁
59 枕部
591 端縁
6 蓋(封止部材)
7 導電性接合材
71 導電性バンプ
72 導電性接合材
81 絶縁部
82 凹部
L1,L2 線
Claims (9)
- 封止部材に、圧電振動を行う圧電振動片を電気的に接続する一対の電極パッドと、前記圧電振動片とともに発振回路を構成する集積回路素子を電気的に接続する複数の接続パッドとを導通させる配線パターンが形成され、前記圧電振動片と前記集積回路素子とが、平面視上、並んで配された発振器において、
前記配線パターンには、少なくとも、前記接続パッドの一つを前記発振回路の交流出力端子に導通させる出力配線パターンと、前記接続パッドの一つを前記発振回路の直流電源端子に導通させる電源配線パターンとが含まれ、
前記電極パッドおよび前記接続パッドが、前記封止部材を構成する基材の一主面に形成され、かつ、前記配線パターンが、前記封止部材を構成する基材の少なくとも一主面に形成され、
前記一主面上において、前記電極パッドは、前記出力配線パターンよりも、前記電源配線パターンの近くに配されたことを特徴とする発振器。 - 封止部材に、圧電振動を行う圧電振動片を電気的に接続する一対の電極パッドと、前記圧電振動片とともに発振回路を構成する集積回路素子を電気的に接続する複数の接続パッドとを導通させる配線パターンが形成された発振器において、
前記配線パターンには、少なくとも、前記接続パッドの一つを前記発振回路の交流出力端子に導通させる出力配線パターンと、前記接続パッドの一つを前記発振回路の直流電源端子に導通させる電源配線パターンと、前記接続パッドの一つを前記発振回路のグランド端子に導通させるグランド配線パターンとが含まれ、
前記電極パッドおよび前記接続パッドが、前記封止部材を構成する基材の一主面に形成され、かつ、前記配線パターンが、前記封止部材を構成する基材の少なくとも一主面に形成され、
前記封止部材を構成する基材の一主面に前記複数の接続パッドが形成され、前記基材の他主面に前記グランド端子が形成され、
前記他主面に形成された前記グランド端子に対応する前記一主面側の対応位置に、前記接続パッドに接続された前記集積回路素子の一部が配されたことを特徴とする発振器。 - 請求項1または2に記載の発振器において、
前記封止部材を構成する基材の一主面にキャビティが形成されるとともに、前記キャビティを囲むように壁部が設けられ、
前記キャビティの底面は、略長方形に形成され、かつ、湾曲面とされ、
m<nを条件とし、前記キャビティの底面に複数の前記接続パッドがm×nのマトリックス状に配され、nの配列方向が前記キャビティの長辺方向であることを特徴とする発振器。 - 請求項1乃至3のうちいずれか1つに記載の発振器において、
前記電極パッド上に、突起部が設けられたことを特徴とする発振器。 - 請求項1乃至4のうちいずれか1つに記載の発振器において、
前記圧電振動片に形成された一対の励振電極が、前記交流出力端子、前記直流電源端子、前記出力配線パターン、および前記電源配線パターンと、非対向状態であることを特徴とする発振器。 - 請求項5に記載の発振器において、
前記集積回路素子の側面に沿って、前記接続パッドに接続される前記配線パターンが形成されたことを特徴とする発振器。 - 請求項1乃至6のうちいずれか1つに記載の発振器において、
電極として、画像認識用の一対の認識部が、前記基材の一主面に形成されたことを特徴とする発振器。 - 請求項1乃至7のうちいずれか1つに記載の発振器において、
前記基板の一主面に、圧電振動片用であり画像認識用である枕部が形成されたことを特徴とする発振器。 - 請求項1乃至8のうちいずれか1つに記載の発振器において、
複数の封止部材により圧電振動片の振動領域が気密封止され、
前記封止部材と前記集積回路素子との空隙は50μm以下であり、前記封止部材と前記圧電振動片との空隙は、前記封止部材と前記集積回路素子との空隙よりも広いことを特徴とする発振器。
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US13/520,814 US8884712B2 (en) | 2010-06-11 | 2011-06-10 | Oscillator |
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JP6631255B2 (ja) * | 2016-01-08 | 2020-01-15 | セイコーエプソン株式会社 | 発振モジュール、電子機器及び移動体 |
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JP6020663B2 (ja) | 2016-11-02 |
JP5861460B2 (ja) | 2016-02-16 |
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JPWO2011155600A1 (ja) | 2013-08-15 |
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US20120280759A1 (en) | 2012-11-08 |
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