WO2011136512A3 - High density plasma generating apparatus - Google Patents

High density plasma generating apparatus Download PDF

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Publication number
WO2011136512A3
WO2011136512A3 PCT/KR2011/002974 KR2011002974W WO2011136512A3 WO 2011136512 A3 WO2011136512 A3 WO 2011136512A3 KR 2011002974 W KR2011002974 W KR 2011002974W WO 2011136512 A3 WO2011136512 A3 WO 2011136512A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic poles
permanent magnet
high density
density plasma
antenna
Prior art date
Application number
PCT/KR2011/002974
Other languages
French (fr)
Korean (ko)
Other versions
WO2011136512A2 (en
Inventor
김정태
Original Assignee
(주)타이닉스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)타이닉스 filed Critical (주)타이닉스
Publication of WO2011136512A2 publication Critical patent/WO2011136512A2/en
Publication of WO2011136512A3 publication Critical patent/WO2011136512A3/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to an inductively coupled high density plasma generating apparatus which stably etches surfaces of sapphire wafers used for producing high luminance LED chips. The apparatus comprises a reaction chamber which provides a space for generating plasma; an antenna system arranged above the reaction chamber to induce electric fields for generating plasma; a dielectric insulation plate interposed between the reaction chamber and the antenna system; and a plurality of permanent magnets arranged along the circumference of the dielectric insulating plate. The plurality of permanent magnets are sequentially arranged in such a manner that one of the magnetic poles of each permanent magnet is the same as one of the magnetic poles of the adjacent permanent magnet and the other of the magnetic poles of each permanent magnet is opposite to the other of the magnetic poles of the adjacent permanent magnet. The antenna system includes a plurality of antenna units arranged in different positions, and each antenna of the antenna units includes a power applying portion to which high frequency power is applied, a ground output portion, and a circular coil. The power applying portion and the ground output portion are arranged to form an opening. The above-described high density plasma generating apparatus can be valuably used in the formation of lens patterns on sapphire wafers, which requires high density plasma etching, as it provides effects of uniform etching using stable plasma.
PCT/KR2011/002974 2010-04-27 2011-04-25 High density plasma generating apparatus WO2011136512A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0039063 2010-04-27
KR20100039063 2010-04-27
KR10-2010-0125941 2010-12-10
KR1020100125941A KR101039232B1 (en) 2010-04-27 2010-12-10 High-density plasma generation apparatus

Publications (2)

Publication Number Publication Date
WO2011136512A2 WO2011136512A2 (en) 2011-11-03
WO2011136512A3 true WO2011136512A3 (en) 2012-03-08

Family

ID=44405053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/002974 WO2011136512A2 (en) 2010-04-27 2011-04-25 High density plasma generating apparatus

Country Status (3)

Country Link
KR (1) KR101039232B1 (en)
TW (1) TWI406336B (en)
WO (1) WO2011136512A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6836976B2 (en) * 2017-09-26 2021-03-03 東京エレクトロン株式会社 Plasma processing equipment
CN110536530A (en) * 2018-09-20 2019-12-03 北京北方华创微电子装备有限公司 Magnetic enhances Faraday shield configuration and inductively coupled plasma source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068458A (en) * 1999-08-31 2001-03-16 Sumitomo Metal Ind Ltd Plasma treating apparatus and plasma treating method
KR100692420B1 (en) * 2005-12-09 2007-03-13 주식회사 플라즈마트 An antenna structure for inductively coupled plasma generator
WO2008143088A1 (en) * 2007-05-18 2008-11-27 Ulvac, Inc. Plasma-processing device and method of manufacturing adhesion-preventing member

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW508693B (en) * 1999-08-31 2002-11-01 Tokyo Electron Limted Plasma treating apparatus and plasma treating method
US7067034B2 (en) * 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
KR100742659B1 (en) * 2005-04-12 2007-07-25 한양대학교 산학협력단 Inductively coupled plasma generating apparatus with magnetic core

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068458A (en) * 1999-08-31 2001-03-16 Sumitomo Metal Ind Ltd Plasma treating apparatus and plasma treating method
KR100692420B1 (en) * 2005-12-09 2007-03-13 주식회사 플라즈마트 An antenna structure for inductively coupled plasma generator
WO2008143088A1 (en) * 2007-05-18 2008-11-27 Ulvac, Inc. Plasma-processing device and method of manufacturing adhesion-preventing member

Also Published As

Publication number Publication date
WO2011136512A2 (en) 2011-11-03
TW201142943A (en) 2011-12-01
TWI406336B (en) 2013-08-21
KR101039232B1 (en) 2011-06-13

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